DE2961795D1 - A method for forming a crystalline film of a paramagnetic sodium thallium type intermetallic compound and apparatus for performing said method - Google Patents
A method for forming a crystalline film of a paramagnetic sodium thallium type intermetallic compound and apparatus for performing said methodInfo
- Publication number
- DE2961795D1 DE2961795D1 DE7979300118T DE2961795T DE2961795D1 DE 2961795 D1 DE2961795 D1 DE 2961795D1 DE 7979300118 T DE7979300118 T DE 7979300118T DE 2961795 T DE2961795 T DE 2961795T DE 2961795 D1 DE2961795 D1 DE 2961795D1
- Authority
- DE
- Germany
- Prior art keywords
- paramagnetic
- forming
- intermetallic compound
- crystalline film
- type intermetallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910000765 intermetallic Inorganic materials 0.000 title 1
- 230000005298 paramagnetic effect Effects 0.000 title 1
- GNWRAZCUQNKMIT-UHFFFAOYSA-N sodium thallium Chemical compound [Na].[Tl] GNWRAZCUQNKMIT-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
- C22F3/02—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons by solidifying a melt controlled by supersonic waves or electric or magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5893—Mixing of deposited material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/872,625 US4222814A (en) | 1978-01-26 | 1978-01-26 | Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2961795D1 true DE2961795D1 (en) | 1982-02-25 |
Family
ID=25359989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE7979300118T Expired DE2961795D1 (en) | 1978-01-26 | 1979-01-24 | A method for forming a crystalline film of a paramagnetic sodium thallium type intermetallic compound and apparatus for performing said method |
Country Status (5)
Country | Link |
---|---|
US (1) | US4222814A (de) |
EP (1) | EP0003425B1 (de) |
JP (1) | JPS54112794A (de) |
CA (1) | CA1135601A (de) |
DE (1) | DE2961795D1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4235662A (en) * | 1978-06-28 | 1980-11-25 | Sotec Corporation | Layer of crystalline silicon having (111) orientation on (111) surface of lithium aluminum |
EP0053150A1 (de) * | 1980-06-13 | 1982-06-09 | Establishment For Science And Technology | Verfahren zur herstellung einer dünnen schicht mit gerichteter struktur, vorrichtung zur durchführung dieses verfahrens und durch diese verfahren hergestellte produkte |
US4865681A (en) * | 1983-02-09 | 1989-09-12 | Board Of Regents Acting For And On Behalf Of The University Of Michigan | Magnetic field epitaxy |
GB8629409D0 (en) * | 1986-12-09 | 1987-01-21 | Evans B L | Multilayered structures |
US4975411A (en) * | 1987-05-19 | 1990-12-04 | Fonar Corporation | Superconductors and methods of making same |
US4990493A (en) * | 1988-09-06 | 1991-02-05 | General Electric Company | Process of making an oriented polycrystal superconductor |
EP0363570B1 (de) * | 1988-10-13 | 1996-02-21 | Japan Electronics Industry, Ltd. | Strassenoberflächen-Reibungsaufnehmer und Strassenoberflächen-Reibungskoeffizienten-Aufnehmer und Fahrzeug-Blockierschutz-Bremsanlage |
DE19514542C2 (de) * | 1995-04-20 | 1997-07-31 | Daimler Benz Ag | Komposit-Struktur und Verfahren zu deren Herstellung |
GB2338962B (en) * | 1996-06-19 | 2000-11-29 | Nec Corp | Thin film formation method |
JP3022328B2 (ja) * | 1996-06-19 | 2000-03-21 | 日本電気株式会社 | 薄膜形成方法 |
US6010750A (en) * | 1997-05-08 | 2000-01-04 | Georgia Tech Research Corporation | Method and apparatus for lithiating alloys |
US6545580B2 (en) | 1998-09-09 | 2003-04-08 | Veeco Instruments, Inc. | Electromagnetic field generator and method of operation |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL260599A (de) * | ||||
US3350240A (en) * | 1963-07-05 | 1967-10-31 | Sumitomo Spec Metals | Method of producing magnetically anisotropic single-crystal magnets |
US3956031A (en) * | 1969-12-24 | 1976-05-11 | Texas Instruments Incorporated | Magnetic materials and the formation thereof |
JPS50160798A (de) * | 1974-06-17 | 1975-12-26 | ||
US4042447A (en) * | 1976-11-01 | 1977-08-16 | Sotec Corporation | Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate |
-
1978
- 1978-01-26 US US05/872,625 patent/US4222814A/en not_active Expired - Lifetime
-
1979
- 1979-01-18 CA CA000319868A patent/CA1135601A/en not_active Expired
- 1979-01-24 DE DE7979300118T patent/DE2961795D1/de not_active Expired
- 1979-01-24 EP EP79300118A patent/EP0003425B1/de not_active Expired
- 1979-01-25 JP JP766379A patent/JPS54112794A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0003425A1 (de) | 1979-08-08 |
JPS54112794A (en) | 1979-09-03 |
EP0003425B1 (de) | 1982-01-13 |
CA1135601A (en) | 1982-11-16 |
US4222814A (en) | 1980-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS557793A (en) | Method and apparatus for cleaning developed photography | |
DE3264735D1 (en) | Apparatus for, and method of, exposing a photosensitive medium to light | |
DE2961795D1 (en) | A method for forming a crystalline film of a paramagnetic sodium thallium type intermetallic compound and apparatus for performing said method | |
JPS5635497A (en) | Method of improving adherence of copper film | |
GB1539804A (en) | Method of forming a photographic image | |
DE2964631D1 (en) | Method for producing a semiconductor film | |
JPS5567135A (en) | Method of forming metallic film of semiconductor device | |
GR64122B (en) | Method for a tight realisation of one compound solar modulator | |
JPS52104699A (en) | Method of removing radioactive methyl iodide | |
GB1547345A (en) | Apparatus for and method of applying a lid to a case | |
JPS57156032A (en) | Method of forming thin film | |
JPS5525099A (en) | Method and apparatus for fixing image to | |
DE2961110D1 (en) | Method and solution for the development of exposed light-sensitive reproduction layers | |
JPS54135003A (en) | Method of measuring reduction of halfftone film | |
GB2026182B (en) | Method of and apparatus for enlarging a photograph | |
GB2057678A (en) | Radiographic apparatus and method for monitoring film exposure time | |
DE3273285D1 (en) | X-ray generator for carrying out an exposure method consisting in a series of exposure steps | |
JPS5582650A (en) | Method of making compound film | |
JPS5546774A (en) | Method and apparatus for producing radioactive photography of object | |
GB2052772B (en) | Method of forming a photographic image | |
JPS57102343A (en) | Method of forming film | |
JPS54115063A (en) | Method of forming metal film | |
JPS53134366A (en) | Method of forming resist film | |
GB2020856B (en) | Method and apparatus for quality film formation | |
JPS54115064A (en) | Method of forming metal film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |