DE2559801C2 - - Google Patents

Info

Publication number: DE2559801C2
Authority: DE; Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

DE2559801A

Inventor

Robert James Dallas County Tex. Us Proebsting

Robert Sherman Collin County Tex. Us Green

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

CTU of Delaware Inc

Original Assignee

Mostek Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1974-10-08

Filing date

1975-10-07

Publication date

1987-02-26

1975-10-07 Application filed by Mostek Corp filed Critical Mostek Corp

1987-02-26 Application granted granted Critical

1987-02-26 Publication of DE2559801C2 publication Critical patent/DE2559801C2/de

Status Expired legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits

DE2559801A 1974-10-08 1975-10-07 Expired DE2559801C2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/513,091 US3969706A (en)	1974-10-08	1974-10-08	Dynamic random access memory misfet integrated circuit

Publications (1)

Publication Number	Publication Date
DE2559801C2 true DE2559801C2 (de)	1987-02-26

Family

ID=24041853

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
DE2560522A Expired DE2560522C2 (de)	1974-10-08	1975-10-07	Speicherzellenadressierungsverfahren
DE19752545313 Pending DE2545313A1 (de)	1974-10-08	1975-10-07	Dynamischer misfet randomspeicher in integrierter schaltung
DE2559801A Expired DE2559801C2 (de)	1974-10-08	1975-10-07

Family Applications Before (2)

Application Number	Title	Priority Date	Filing Date
DE2560522A Expired DE2560522C2 (de)	1974-10-08	1975-10-07	Speicherzellenadressierungsverfahren
DE19752545313 Pending DE2545313A1 (de)	1974-10-08	1975-10-07	Dynamischer misfet randomspeicher in integrierter schaltung

Country Status (3)

Country	Link
US (1)	US3969706A (de)
JP (5)	JPS5191636A (de)
DE (3)	DE2560522C2 (de)

Families Citing this family (118)

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JPS5587360A (en) *	1978-12-23	1980-07-02	Toshiba Corp	Information supply system
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JPS5827439Y2 (ja) *	1979-04-18	1983-06-14	シャープ株式会社	モリの番地選択回路
JPS55150192A (en) *	1979-05-08	1980-11-21	Nec Corp	Memory unit
EP0019987A1 (de) *	1979-06-01	1980-12-10	Motorola, Inc.	Schnell-Lese-Pufferverstärker mit FET-Transistoren
US4270189A (en) *	1979-11-06	1981-05-26	International Business Machines Corporation	Read only memory circuit
JPS5847793B2 (ja) *	1979-11-12	1983-10-25	富士通株式会社	半導体記憶装置
DE2948159C2 (de) *	1979-11-29	1983-10-27	Siemens AG, 1000 Berlin und 8000 München	Integrierter Speicherbaustein mit wählbaren Betriebsfunktionen
DE2952056C2 (de) *	1979-12-22	1981-11-26	Hewlett-Packard GmbH, 7030 Böblingen	Schreib- und Leseschaltung für einen Speicher mit wahlfreiem Zugriff
US4291392A (en) *	1980-02-06	1981-09-22	Mostek Corporation	Timing of active pullup for dynamic semiconductor memory
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JPS5837700B2 (ja) *	1980-04-03	1983-08-18	株式会社東芝	Ｍｏｓ型集積回路
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US4360901A (en) *	1980-06-02	1982-11-23	Mostek Corporation	Decoder circuit for semiconductor memory
US4412314A (en) *	1980-06-02	1983-10-25	Mostek Corporation	Semiconductor memory for use in conjunction with error detection and correction circuit
JPS5727477A (en) *	1980-07-23	1982-02-13	Nec Corp	Memory circuit
EP0162234A3 (de)	1980-07-23	1986-03-19	Nec Corporation	Speicheranordnung
JPS5746391A (en) *	1980-09-05	1982-03-16	Toshiba Corp	Semiconductor memory
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EP0055594B1 (de) *	1980-12-23	1988-07-13	Fujitsu Limited	Elektrisch programmierbares Festwerthalbleiterspeichergerät
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JPS57212690A (en) *	1981-06-24	1982-12-27	Hitachi Ltd	Dynamic mos memory device
JPS589285A (ja) *	1981-07-08	1983-01-19	Toshiba Corp	半導体装置
US4386389A (en) *	1981-09-08	1983-05-31	Mostek Corporation	Single layer burn-in tape for integrated circuit
JPS5877085A (ja) *	1981-10-30	1983-05-10	Fujitsu Ltd	半導体メモリ
US4445201A (en) *	1981-11-30	1984-04-24	International Business Machines Corporation	Simple amplifying system for a dense memory array
JPS6052513B2 (ja) *	1981-12-02	1985-11-19	富士通株式会社	半導体記憶装置
JPS58128097A (ja) *	1981-12-29	1983-07-30	Fujitsu Ltd	半導体記憶装置
US4546451A (en) *	1982-02-12	1985-10-08	Metheus Corporation	Raster graphics display refresh memory architecture offering rapid access speed
US4507761A (en) *	1982-04-20	1985-03-26	Mostek Corporation	Functional command for semiconductor memory
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1974
- 1974-10-08 US US05/513,091 patent/US3969706A/en not_active Expired - Lifetime
1975
- 1975-10-07 DE DE2560522A patent/DE2560522C2/de not_active Expired
- 1975-10-07 DE DE19752545313 patent/DE2545313A1/de active Pending
- 1975-10-07 DE DE2559801A patent/DE2559801C2/de not_active Expired
- 1975-10-08 JP JP50120855A patent/JPS5191636A/ja active Pending
1976
- 1976-04-13 JP JP4097176A patent/JPS52122058A/ja active Pending
- 1976-04-13 JP JP4097076A patent/JPS52122057A/ja active Pending
- 1976-04-13 JP JP4097376A patent/JPS52122059A/ja active Pending
- 1976-04-13 JP JP51040972A patent/JPS5228237A/ja active Pending

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JPS52122059A (en)	1977-10-13
JPS5228237A (en)	1977-03-03
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JPS5191636A (en)	1976-08-11
DE2545313A1 (de)	1976-04-29
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Publication	Publication Date	Title
FR2286328B1 (de)	1982-04-16
JPS5127873A (de)	1976-03-09
FR2283366B1 (de)	1980-01-11
JPS50129718A (de)	1975-10-14
JPS50120611U (de)	1975-10-02
JPS50132857U (de)	1975-10-31
JPS5136173U (de)	1976-03-17
JPS5316039Y2 (de)	1978-04-27
JPS50125061A (de)	1975-10-01
BG26394A3 (de)	1979-03-15
CH588062A5 (de)	1977-05-31
BG22687A1 (de)	1977-04-20
CH588136A5 (de)	1977-05-31
BG26517A4 (de)	1979-04-12
CH560911A5 (de)	1975-04-15
CH568516A5 (de)	1975-10-31
CH569131A5 (de)	1975-11-14
CH569882A5 (de)	1975-11-28
BG22343A1 (de)	1977-02-20
BG21740A1 (de)	1976-09-20
BG21431A1 (de)	1976-07-20
BG20852A1 (de)	1976-01-20
CH587499A5 (de)	1977-05-13
BG20674A1 (de)	1975-12-20
BG19620A1 (de)	1975-10-10