DE19919381A1 - Mehrfachverkapselung von Phosphor-LED-Bauelementen - Google Patents
Mehrfachverkapselung von Phosphor-LED-BauelementenInfo
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- DE19919381A1 DE19919381A1 DE19919381A DE19919381A DE19919381A1 DE 19919381 A1 DE19919381 A1 DE 19919381A1 DE 19919381 A DE19919381 A DE 19919381A DE 19919381 A DE19919381 A DE 19919381A DE 19919381 A1 DE19919381 A1 DE 19919381A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Ein Halbleiterbauelement weist eine lichtemittierende Diode auf, die durch ein transparentes Beabstandungselement bedeckt ist, das die LED von einer gleichmäßig dicken Fluoreszensmaterial enthaltenden Schicht derart trennt, daß ein gleichmäßigeres Leuchten der Fluoreszenzmaterial enthaltenden Schicht erhalten wird, um ein gleichmäßig weißes Licht zu liefern.
Description
Die vorliegende Erfindung bezieht sich allgemein auf licht
emittierende Dioden und insbesondere auf lichtemittierende
Dioden, die Fluoreszenzmaterialien verwenden.
Derzeit wird eine lichtemittierende Diode oder eine LED, die
blaues Licht emittiert, in Kombination mit einem Fluores
zenzmaterial verwendet, um ein LED-Bauelement zu erzeugen,
das weißes Licht ausgibt. Weißes Licht erstreckt sich üb
licherweise gleichmäßig von 400 bis 600 Nanometer (nm) be
züglich der Wellenlänge, aber Licht, das als eine Kombina
tion von rot, blau und grün auftritt, wird ebenso als weiß
erscheinen. Durch Verwenden von Indium-Gallium-Nitrid bei
der LED, ist es möglich, ein intensives blaues Licht zu er
zeugen. Durch Verwenden von Phosphor, der im allgemeinen
rotes und grünes Licht mit niedrigen Intensitäten und blaues
Licht mit höheren Intensitäten erzeugt, ist es möglich, ein
intensives Licht zu erzeugen, das weiß erscheint. Im wesent
lichen stößt das meiste des blauen Lichts bei 470 nm an den
Phosphor in dem Fluoreszenzmaterial, wobei dieses Licht nach
oben verschoben werden würde, derart, daß das grüne und rote
Nebenlicht das restliche blaue Licht komplementieren, das an
dem Phosphor vorbeigelangt. Dies liefert eine schließliche
Kombination von Licht, die für das menschliche Auge als weiß
erscheint.
Ungünstigerweise ist bestimmt worden, daß der herkömmliche
Lösungsansatz des Verwendens eines Fluoreszenzmaterials, das
auf die Blau-LED geschichtet wird, eine LED mit einem hel
len, weißen Kern erzeugt, der durch einen ringförmigen Ring
von gelb gefolgt von einem ringförmigen Ring von blau ge
folgt durch einen schließlichen ringförmigen Ring von gelb
umgeben ist. Diese ringförmigen Ringe treten von LED zu LED
nicht immer in einer vorhersagbaren Art und Weise auf, so
daß einige LEDs relativ gleichmäßiges weißes Licht liefern,
wohingegen andere Variationen der ringförmigen Ringe auf
weisen.
Es hat sich als schwierig herausgestellt, die Ursachen die
ser Ringe zu bestimmen, und folglich als schwierig, zu be
stimmen, wie dieses Problem zu lösen ist. Kunden sehen die
Abweichungen von weiß als einen Fehler bei der LED an, so
daß eine große Anzahl während der Qualitätskontrolle aus
rangiert werden muß.
Das vorhergehende Problem tritt sowohl bei LED-Lampen als
auch bei Oberflächen-befestigten LED-Leuchten auf.
Die Aufgabe der vorliegenden Erfindung besteht darin,
gleichmäßig leuchtende Halbleiterbauelemente mit geringem
Ausschuß zu schaffen.
Diese Aufgabe wird durch ein Halbleiterbauelement gemäß
Anspruch 1, 7 oder 14 gelöst.
Ein Halbleiterbauelement weist eine lichtemittierende Diode
auf, die durch ein transparentes Beabstandungselement be
deckt ist. Das transparente Beabstandungselement trennt die
LED von dem Fluoreszenzmaterial, derart, daß ein gleichmäßi
geres Leuchten des Fluoreszenzmaterials auftritt, um eine
LED mit einem konstanten, gleichmäßigen weißen Licht zu lie
fern. Dies beseitigt ein früheres Problem bei Weiß-Halb
leiterleuchten, die gelbes und/oder blaues Licht emittieren.
Bevorzugte Ausführungsbeispiele der vorliegenden Erfindung
werden nachfolgend bezugnehmend auf die beiliegenden Zeich
nungen näher erläutert. Es zeigen:
Fig. 1 (stand der Technik) einen Querschnitt einer früh
eren LED-Lampe;
Fig. 2 (stand der Technik) eine Nahansicht einer herkömm
lichen LED und dessen Verkapselungssystem;
Fig. 3 eine Nahansicht der LED mit dem Verkapselungssystem
der vorliegenden Erfindung; und
Fig. 4 eine Nahansicht der LED bei einer Oberflächenbe
festigungsvorrichtung, die das Verkapselungssystem
der vorliegenden Erfindung verwendet.
Es wird nun auf Fig. 1 (Stand der Technik) Bezug genommen.
Darin ist eine Lichtemittierende-Diode-Lampe 10 (LED-Lampe)
gezeigt. Die LED-Lampe 10 weist erste und zweite Anschlüsse
oder Anschlußleitungsrahmen 12 und 14 auf, durch die zu der
LED-Lampe 10 eine elektrische Leistung zugeführt wird. Der
Anschlußleitungsrahmen 12 weist einen Ausnehmungsreflektor
bereich 16 auf, in dem eine LED 18 angeordnet ist. Die LED
ist aus einer Indium-dotierten Gallium-Nitrid Epitaxie
schicht auf einem transparenten Saphirsubstrat hergestellt.
Wenn die obere Oberfläche der LED aus Indium-Gallium-Nitrid
durch einen Gleichstrom bei der geeigneten Durchlaßspannung
aktiviert wird, erzeugt dieselbe ein blaues Licht bei etwa
470 nm Wellenlänge.
Die LED 18 ist durch eine Drahtverbindung 20 mit dem An
schlußleitungsrahmen 12 und durch eine Drahtverbindung 22
mit dem Anschlußleitungsrahmen 14 verbunden. Die LED 18
weist eine Schicht eines Fluoreszenzmaterials 24 auf, die
über derselben angeordnet ist. Das Fluoreszenzmaterial 24
ist im allgemeinen ein transparentes Epoxidharz, das Parti
kel von YAG/Gd:Ce-Phosphor enthält. Die gesamte Anordnung
ist in ein transparentes Verkapselungsepoxidharz 26 einge
bettet.
In Fig. 1 (Stand der Technik) sind ebenfalls Pfeile 28 und
30 gezeigt, die die Lichtstrahlen eines ringförmigen blauen
Rings darstellen. Die Pfeile 32 und 34 stellen die Licht
strahlen eines äußeren ringförmigen Rings dar, wobei die
Pfeile 36 und 38 einen inneren ringförmigen gelben Ring dar
stellen.
Es wird nun auf Fig. 2 (Stand der Technik) Bezug genommen.
Darin ist der Anschlußleitungsrahmen 12 mit dessen Reflek
torabschnitt 16 gezeigt, der eine Mulde bildet, die die LED
18 hält. Bei genauerem Hinsehen weist die Schicht des Fluo
reszenzmaterials 24 dünne Bereiche bei 40 und 42 und einen
dickeren Bereich bei 44 auf. Das schließliche Verkapselungs
epoxidharz 26 ist aus Einfachheitszwecken nicht gezeigt.
Es wird nun auf Fig. 3 Bezug genommen. Darin ist ein Zulei
tungsrahmen 12 mit dem Reflektor 16 gezeigt, der die LED 18
hält. Gleiche Bauteile wie die im Stand der Technik sind mit
denselben Bezugszeichen gezeigt. Ein transparentes Beabstan
dungselement 50 ist gezeigt, wie es die LED 18 verkapselt,
wobei eine Ebene eines Fluoreszenzmaterials 52 gezeigt ist,
die oberhalb des transparenten Beabstandungselements 50 an
geordnet ist. Das schließliche Verkapselungsepoxidharz 26
ist aus Einfachheitszwecken nicht gezeigt.
Es wird nun auf Fig. 4 Bezug genommen. Darin ist eine ober
flächenbefestigte LED-Leuchte 60 gezeigt, die auf einem
Bauelementsubstrat 62 einer Oberflächenbefestigungsvorrich
tung angeordnet ist. Die LED 60 ist in einem transparenten
Beabstandungselement 64 verkapselt, das ferner durch eine
Schicht eines Fluoreszenzmaterials 66 und einer schließ
lichen transparenten Verkapselungsschicht 68 bedeckt ist.
Bei Betrieb würde die LED-Lampe 10 von Fig. 1 (Stand der
Technik) eine Leistung aufweisen, die an dem Anschlußlei
tungsrahmen 12 oder 14 angelegt ist, abhängig davon, welcher
Teil der LED der p-Übergang und welcher Teil der n-Übergang
war. Auf das Anlegen von Leistung hin würde die Oberseite
der LED 18 intensives blaues Licht emittieren. Wo bei dem
Bereich 44 die korrekte Dicke des Fluoreszenzmaterials vor
gesehen war, würde die korrekte Kombination aus blauem Licht
bei ungefähr 470 nm und dem grünen und roten Phosphorlicht
bei 500 nm bzw. 550 nm ein weißes Licht erzeugen.
Wo die Schicht des Fluoreszenzmaterials bei den Bereichen 40
und 42 relativ dünn war, die in Fig. 2 (Stand der Technik)
gezeigt sind, würde das blaue Licht im allgemeinen einen
blauen ringförmigen Ring entlang der Lichtstrahllinien 28
und 30 liefern, da dort ein ungenügender Beitrag von Licht
von dem Phosphor vorhanden sein würde. Innerhalb und außer
halb des ringförmigen blauen Rings würden aufgrund der
Lichtstrahlen 32 und 34 und der Lichtstrahlen 36 und 38
gelbe ringförmige Ringe vorhanden sein, wo der Phosphor
einiges Licht beitragen würde, aber dasselbe nicht ausrei
chen würde, um ein gleichmäßiges weißes Licht zu erzeugen.
Es ist bestimmt worden, daß die Oberflächenspannung des
Materials 24 über der LED 18 Bereiche von verschiedenen
Dicken bewirkt, die sich von den Dicken bei den Bereichen 40
und 42 durch die Ecken der LED 18 und die Dicke bei dem
Bereich 44 oberhalb der Mitte der LED erstreckt. Dies be
wirkt eine nicht gleichmäßige Abstrahlung des blauen Lichts
und bewirkt die ringförmigen Ringe, die im vorhergehenden
beschrieben wurden. Dies erscheint inhärent zu sein, wo die
Schicht des Fluoreszenzmaterials 24 über und um die LED 18
aufgebracht ist.
Bei der vorliegenden Erfindung, wie sie in Fig. 3 gezeigt
ist, ist es bestimmt worden, daß das Aufbringen eines
transparenten Beabstandungselements 50 über und um die LED
18 und das Trennen einer im wesentlichen gleichmäßig dicken
Schicht eines Fluoreszenzmaterials 52 von der LED 18 die
ringförmigen Ringe beseitigen wird. Es ist ebenfalls be
stimmt worden, daß das transparente Beabstandungselement 50
exakt mit der Oberseite der LED 18 abgeglichen sein kann,
derart, daß die Schicht des Fluoreszenzmaterials 52 aus
einer gleichmäßigen Dicke oberhalb der LED besteht, und daß
dies ebenfalls das Problem beseitigen wird. Der letztere Lö
sungsansatz erfordert jedoch eine vorsichtigere Volumenver
teilung des transparenten Beabstandungselements 50 bei der
Mulde, die durch den konischen Reflektorbereich 16 gebildet
ist.
Für eine oberflächenbefestigte LED-Leuchte, wie sie in Fig.
4 gezeigt ist, ist es möglich, eine Oberflächenspannung (die
bei der Größe einer LED 18 relativ zu den Gravitationskräf
ten groß ist) in einer Kombination mit einer Viskosität zu
verwenden, um den Tropfen einer halbsphärischen Abmessung
eines zähflüssigen, transparenten ultraviolett-(UV-)Licht-
aushärtenden Harzes über der LED 18 zu ermöglichen, der das
transparente Beabstandungselement 60 bildet. Das Harz würde
alle die Ecken bedecken und daraufhin unter Verwendung von
UV-Licht ausgehärtet werden. Dieser Vorgang würde daraufhin
von der Schicht des Fluoreszenzmaterials 66 gefolgt werden,
das ebenfalls ein zähflüssiges UV-aushärtendes Harz ist. Das
Aufbringen des transparenten Beabstandungselements 64 würde
eine Halbsphäre als ein Tröpfchen liefern, und die Schicht
des Fluoreszenzmaterials 66 würde daraufhin fließen, um sich
der halbsphärischen Form des transparenten Beabstandungsele
ments 64 anzupassen, und würde vor der schließlichen Ver
kapselung 68 ausgehärtet werden und aushärten. Da die
Schicht des Fluoreszenzmaterials 66 aus einer gleichmäßigen
Dicke bestehen würde, würde dieselbe nicht von dem Problem
des ringförmigen Rings betroffen sein.
Es ist notwendig, eine schnelle Aushärtung vorzunehmen, wie
z. B. eine UV-Aushärtung, da es der normale Tropfen bezüglich
der Viskosität während der thermischen Aushärtung ermög
lichen würde, daß die meisten Harze, normalerweise Epoxid
harze, von der LED 18 trotz der kleinen Größe wegfließen
würden. Daraufhin kann die schließliche Verkapselungsschicht
68 aufgetragen werden.
Obwohl die Erfindung in Verbindung mit einem spezifischen
besten Modus beschrieben worden ist, wird darauf hingewie
sen, daß für Fachleute in dieser Technik aufgrund der vor
hergehenden Beschreibung viele Alternativen, Modifikationen
und Variationen offensichtlich sind. Dementsprechend ist
beabsichtigt, alle solche Alternativen, Modifikationen und
Variationen zu umfassen, die in den Schutzbereich der umfaß
ten Ansprüche fallen. Alle Dinge, die hierin beschrieben
wurden oder in den begleitenden Zeichnungen gezeigt wurden,
sind in einem beispielhaften und nicht-begrenzenden Sinne zu
interpretieren.
Claims (20)
1. Halbleiterbauelement mit
einem lichtemittierenden Halbleiter (18);
einem transparenten Beabstandungselement (50), das um den lichtemittierenden Halbleiter (18) angeordnet ist;
einer Fluoreszenzmaterial-enthaltenden Schicht (52), die über dem lichtemittierenden Halbleiter (18) und dem transparenten Beabstandungselement (50) angeordnet ist; und
Eingangsanschlüssen (12, 14), die mit dem lichtemittie renden Halbleiter (18) verbunden sind, zum Erregen des lichtemittierenden Halbleiters (18), damit derselbe Licht emittiert.
einem lichtemittierenden Halbleiter (18);
einem transparenten Beabstandungselement (50), das um den lichtemittierenden Halbleiter (18) angeordnet ist;
einer Fluoreszenzmaterial-enthaltenden Schicht (52), die über dem lichtemittierenden Halbleiter (18) und dem transparenten Beabstandungselement (50) angeordnet ist; und
Eingangsanschlüssen (12, 14), die mit dem lichtemittie renden Halbleiter (18) verbunden sind, zum Erregen des lichtemittierenden Halbleiters (18), damit derselbe Licht emittiert.
2. Halbleiterbauelement gemäß Anspruch 1, bei dem das
transparente Beabstandungselement (50) über dem licht
emittierenden Halbleiter (18) angeordnet ist, und die
Fluoreszenzmaterial-enthaltende Schicht (52) durch das
transparente Beabstandungselement (50) von dem licht
emittierenden Halbleiter (18) beabstandet ist.
3. Halbleiterbauelement gemäß Anspruch 1 oder 2, das eine
Schutzschicht (68) aufweist, die über der Fluoreszenz
material-enthaltenden Schicht (52) angeordnet ist.
4. Halbleiterbauelement gemäß einem der Ansprüche 1-3, bei
dem einer (12) der Eingangsanschlüsse einen Reflektor
für den lichtemittierenden Halbleiter bildet.
5. Halbleiterbauelement gemäß einem der Ansprüche 1-4, bei
dem der lichtemittierende Halbleiter (18) Licht bei vor
bestimmten Wellenlängen erzeugt, das teilweise durch die
Fluoreszenzmaterial-enthaltende Schicht (52) in eine an
dere Wellenlänge umgewandelt wird.
6. Halbleiterbauelement gemäß einem der Ansprüche 1-5, bei
dem
der lichtemittierende Halbleiter (18) blaues Licht er zeugt;
die Fluoreszenzmaterial-enthaltende Schicht (52) Phos phor enthält, der auf den größten Teil des blauen Lichts anspricht, um Licht zu erzeugen, das mit dem Rest des blauen Lichts kombinierbar ist, um aus demselben weißes Licht zu erzeugen.
der lichtemittierende Halbleiter (18) blaues Licht er zeugt;
die Fluoreszenzmaterial-enthaltende Schicht (52) Phos phor enthält, der auf den größten Teil des blauen Lichts anspricht, um Licht zu erzeugen, das mit dem Rest des blauen Lichts kombinierbar ist, um aus demselben weißes Licht zu erzeugen.
7. Halbleiterbauelement mit
einer lichtemittierenden Diode (18);
einem transparenten Verkapselungsharz (64), das um die lichtemittierende Diode (18) angeordnet ist;
einem Harz (66), das ein Fluoreszenzmaterial enthält und über der lichtemittierenden Diode (18) und dem transpa renten Verkapselungsharz (64) angeordnet ist; und
Eingangsanschlüssen (12, 14), die mit der lichtemittie renden Diode (18) verbunden sind, zum Erregen der licht emittierenden Diode (18), damit dieselbe Licht emit tiert.
einer lichtemittierenden Diode (18);
einem transparenten Verkapselungsharz (64), das um die lichtemittierende Diode (18) angeordnet ist;
einem Harz (66), das ein Fluoreszenzmaterial enthält und über der lichtemittierenden Diode (18) und dem transpa renten Verkapselungsharz (64) angeordnet ist; und
Eingangsanschlüssen (12, 14), die mit der lichtemittie renden Diode (18) verbunden sind, zum Erregen der licht emittierenden Diode (18), damit dieselbe Licht emit tiert.
8. Halbleiterbauelement gemäß Anspruch 7, bei dem das
transparente Verkapselungsharz (64) über der licht
emittierenden Diode (18) angeordnet ist, wobei das Harz
(66), das das Fluoreszenzmaterial enthält, durch das
transparente Verkapselungsharz (64) von der lichtemit
tierenden Diode (18) beabstandet ist, und wobei das Harz
(66), das das Fluoreszenzmaterial enthält, eine im we
sentlichen gleichmäßige Dicke aufweist.
9. Halbleiterbauelement gemäß Anspruch 7 oder 8, das eine
Schutzharzschicht (68) aufweist, die über dem Harz (66),
das das Fluoreszenzmaterial enthält, angeordnet ist.
10. Halbleiterbauelement gemäß einem der Ansprüche 7-9, bei
dem einer (12) der Eingangsanschlüsse (12, 14) einen Re
flektor für die lichtemittierende Diode und eine Mulde
für die Harze bildet.
11. Halbleiterbauelement gemäß einem der Ansprüche 7-10, das
ein Bauelementsubstrat aufweist, das auf sich angeord
net die lichtemittierende Diode (18) und auf sich ge
tropft das Harz aufweist.
12. Halbleiterbauelement gemäß einem der Ansprüche 7-11, bei
dem die lichtemittierende Diode (18) Licht bei vorbe
stimmten Wellenlängen erzeugt, das teilweise durch das
Fluoreszenzmaterial (66) in eine andere Wellenlänge
umgewandelt wird, um ein gleichmäßiges weißes Licht zu
liefern.
13. Halbleiterbauelement gemäß einem der Ansprüche 7-12, bei
dem
die lichtemittierende Diode (18) blaues Licht erzeugt;
das Fluoreszenzmaterial einen ersten Phosphor, der auf das blaue Licht anspricht, um grünes Licht zu erzeugen, und einen zweiten Phosphor enthält, der auf das blaue Licht anspricht, um rotes Licht zu erzeugen; und
das Fluoreszenzmaterial aus dem blauen Licht, das durch dasselbe läuft, und dem roten und dem grünen Licht, das von demselben emittiert wird, weiß-erscheinendes Licht erzeugt.
die lichtemittierende Diode (18) blaues Licht erzeugt;
das Fluoreszenzmaterial einen ersten Phosphor, der auf das blaue Licht anspricht, um grünes Licht zu erzeugen, und einen zweiten Phosphor enthält, der auf das blaue Licht anspricht, um rotes Licht zu erzeugen; und
das Fluoreszenzmaterial aus dem blauen Licht, das durch dasselbe läuft, und dem roten und dem grünen Licht, das von demselben emittiert wird, weiß-erscheinendes Licht erzeugt.
14. Halbleiterbauelement mit
einem Saphirsubstrat;
einer Indium-dotierten Gallium-Nitrid-Epitaxieschicht, die auf dem Saphirsubstrat angeordnet ist, um eine lichtemittierende Diode (18) zu bilden;
einem transparenten Verkapselungsharz (64), das um das Saphirsubstrat angeordnet ist;
einem YAG/Gd:Ce-Phosphor-enthaltenden Harz (66), das über der Epitaxieschicht und dem transparenten Verkap selungsharz angeordnet ist; und
Eingangsanschlüssen (12, 14), die mit der Epitaxie schicht verbunden sind, zum Erregen der Epitaxieschicht, damit dieselbe Licht emittiert.
einem Saphirsubstrat;
einer Indium-dotierten Gallium-Nitrid-Epitaxieschicht, die auf dem Saphirsubstrat angeordnet ist, um eine lichtemittierende Diode (18) zu bilden;
einem transparenten Verkapselungsharz (64), das um das Saphirsubstrat angeordnet ist;
einem YAG/Gd:Ce-Phosphor-enthaltenden Harz (66), das über der Epitaxieschicht und dem transparenten Verkap selungsharz angeordnet ist; und
Eingangsanschlüssen (12, 14), die mit der Epitaxie schicht verbunden sind, zum Erregen der Epitaxieschicht, damit dieselbe Licht emittiert.
15. Halbleiterbauelement gemäß Anspruch 14, bei dem das
transparente Verkapselungsharz (64) über der Epitaxie
schicht angeordnet ist, und das Phosphor-enthaltende
Harz (66) durch das transparente Verkapselungsharz (64)
von der Epitaxieschicht beabstandet ist.
16. Halbleiterbauelement gemäß Anspruch 14 oder 15, das eine
Schutzschicht (68) aufweist, die über dem Phosphor-ent
haltenden Harz (66) angeordnet ist.
17. Halbleiterbauelement gemäß einem der Ansprüche 14-16,
bei dem einer (12) der Eingangsanschlüsse (12, 14) einen
Reflektor für die Epitaxieschicht auf dem Saphirsubstrat
bildet.
18. Halbleiterbauelement gemäß einem der Ansprüche 14-17,
das ein Bauelementsubstrat (62) aufweist, das auf sich
angeordnet das Saphirsubstrat aufweist.
19. Halbleiterbauelement gemäß einem der Ansprüche 14-18,
bei dem die Epitaxieschicht Licht bei vorbestimmten Wel
lenlängen erzeugt, das teilweise durch das Phosphor-ent
haltende Harz (66) in eine andere Wellenlänge umgewan
delt wird, um ein gleichmäßiges weiß-erscheinendes Licht
zu liefern.
20. Halbleiterbauelement gemäß einem der Ansprüche 14-19,
bei dem
die Epitaxieschicht blaues Licht erzeugt;
das YAG/Gd:Ce-Phosphor-enthaltende Harz (66) ansprechend auf das meiste des blauen Lichts grünes und rotes Licht emittiert; und
das YAG/Gd:Ce-Phosphor-enthaltende Harz (66) aus dem grünen und roten Licht, das von demselben emittiert wird, und dem restlichen blauen Licht, das durch das selbe läuft, weiß-erscheinendes Licht erzeugt.
die Epitaxieschicht blaues Licht erzeugt;
das YAG/Gd:Ce-Phosphor-enthaltende Harz (66) ansprechend auf das meiste des blauen Lichts grünes und rotes Licht emittiert; und
das YAG/Gd:Ce-Phosphor-enthaltende Harz (66) aus dem grünen und roten Licht, das von demselben emittiert wird, und dem restlichen blauen Licht, das durch das selbe läuft, weiß-erscheinendes Licht erzeugt.
Applications Claiming Priority (2)
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US09/144744 | 1998-09-01 | ||
US09/144,744 US5959316A (en) | 1998-09-01 | 1998-09-01 | Multiple encapsulation of phosphor-LED devices |
Publications (2)
Publication Number | Publication Date |
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DE19919381A1 true DE19919381A1 (de) | 2000-03-09 |
DE19919381B4 DE19919381B4 (de) | 2006-05-04 |
Family
ID=22509938
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Application Number | Title | Priority Date | Filing Date |
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DE19919381A Expired - Lifetime DE19919381B4 (de) | 1998-09-01 | 1999-04-28 | Mehrfachverkapselung von LED-Bauelementen |
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Country | Link |
---|---|
US (1) | US5959316A (de) |
JP (2) | JP4562828B2 (de) |
DE (1) | DE19919381B4 (de) |
GB (1) | GB2341274A (de) |
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JP2010161423A (ja) | 2010-07-22 |
GB2341274A (en) | 2000-03-08 |
JP2000077723A (ja) | 2000-03-14 |
GB9920418D0 (en) | 1999-11-03 |
US5959316A (en) | 1999-09-28 |
JP4562828B2 (ja) | 2010-10-13 |
DE19919381B4 (de) | 2006-05-04 |
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