DE10196292T1 - Schaltung und Verfahren zum Erkennen von Mehrfachübereinstimmungen - Google Patents
Schaltung und Verfahren zum Erkennen von MehrfachübereinstimmungenInfo
- Publication number
- DE10196292T1 DE10196292T1 DE10196292T DE10196292T DE10196292T1 DE 10196292 T1 DE10196292 T1 DE 10196292T1 DE 10196292 T DE10196292 T DE 10196292T DE 10196292 T DE10196292 T DE 10196292T DE 10196292 T1 DE10196292 T1 DE 10196292T1
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- detecting multiple
- multiple matches
- matches
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA2310295A CA2310295C (en) | 2000-05-31 | 2000-05-31 | Multiple match detection circuit and method |
| PCT/CA2001/000797 WO2001093274A1 (en) | 2000-05-31 | 2001-05-31 | Multiple match detection circuit and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10196292T1 true DE10196292T1 (de) | 2003-06-18 |
Family
ID=4166343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10196292T Withdrawn DE10196292T1 (de) | 2000-05-31 | 2001-05-31 | Schaltung und Verfahren zum Erkennen von Mehrfachübereinstimmungen |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US6990001B2 (de) |
| KR (1) | KR100810778B1 (de) |
| CN (1) | CN1296938C (de) |
| AU (1) | AU2001263688A1 (de) |
| CA (1) | CA2310295C (de) |
| DE (1) | DE10196292T1 (de) |
| GB (1) | GB2379545B (de) |
| WO (1) | WO2001093274A1 (de) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2307240C (en) * | 2000-05-01 | 2011-04-12 | Mosaid Technologies Incorporated | Matchline sense circuit and method |
| US7006368B2 (en) | 2002-11-07 | 2006-02-28 | Mosaid Technologies Incorporated | Mismatch-dependent power allocation technique for match-line sensing in content-addressable memories |
| US7142464B2 (en) * | 2003-04-29 | 2006-11-28 | Saifun Semiconductors Ltd. | Apparatus and methods for multi-level sensing in a memory array |
| US7254753B2 (en) * | 2003-07-25 | 2007-08-07 | Micron Technology, Inc. | Circuit and method for configuring CAM array margin test and operation |
| US7363423B2 (en) * | 2004-08-02 | 2008-04-22 | Lsi Logic Corporation | Multiple match detection circuit |
| US7006400B1 (en) * | 2004-10-12 | 2006-02-28 | Tellabs Petaluma, Inc. | Content addressable memory with reduced instantaneous current and power consumption during a search |
| JP4922932B2 (ja) * | 2005-06-28 | 2012-04-25 | スパンション エルエルシー | 半導体装置およびその制御方法 |
| US20070255889A1 (en) * | 2006-03-22 | 2007-11-01 | Yoav Yogev | Non-volatile memory device and method of operating the device |
| US7724559B2 (en) * | 2006-07-14 | 2010-05-25 | International Business Machines Corporation | Self-referenced match-line sense amplifier for content addressable memories |
| US7480184B2 (en) | 2007-01-07 | 2009-01-20 | International Business Machines Corporation | Maximum likelihood statistical method of operations for multi-bit semiconductor memory |
| KR100813628B1 (ko) * | 2007-01-08 | 2008-03-14 | 삼성전자주식회사 | 타이밍에 따라서 래치 타입이 변하는 데이터 버스 감지증폭기를 포함하는 반도체 메모리 장치 및 그것의 데이터감지 방법 |
| US20080239599A1 (en) * | 2007-04-01 | 2008-10-02 | Yehuda Yizraeli | Clamping Voltage Events Such As ESD |
| US7764535B2 (en) * | 2008-06-11 | 2010-07-27 | Miradia Inc. | Low power, small size SRAM architecture |
| US20100002482A1 (en) * | 2008-07-03 | 2010-01-07 | Advanced Micro Devices, Inc. | Memory device and method |
| US7724567B2 (en) * | 2008-07-03 | 2010-05-25 | Advanced Micro Devices, Inc. | Memory device and method of refreshing |
| US9063840B1 (en) * | 2009-08-21 | 2015-06-23 | Broadcom Corporation | Multiple match detection for multiple flows in a content addressable memory |
| US9224496B2 (en) | 2010-08-11 | 2015-12-29 | Shine C. Chung | Circuit and system of aggregated area anti-fuse in CMOS processes |
| US9824768B2 (en) | 2015-03-22 | 2017-11-21 | Attopsemi Technology Co., Ltd | Integrated OTP memory for providing MTP memory |
| US9496033B2 (en) | 2010-08-20 | 2016-11-15 | Attopsemi Technology Co., Ltd | Method and system of programmable resistive devices with read capability using a low supply voltage |
| US9711237B2 (en) | 2010-08-20 | 2017-07-18 | Attopsemi Technology Co., Ltd. | Method and structure for reliable electrical fuse programming |
| US8570800B2 (en) | 2010-08-20 | 2013-10-29 | Shine C. Chung | Memory using a plurality of diodes as program selectors with at least one being a polysilicon diode |
| US10923204B2 (en) | 2010-08-20 | 2021-02-16 | Attopsemi Technology Co., Ltd | Fully testible OTP memory |
| US9818478B2 (en) | 2012-12-07 | 2017-11-14 | Attopsemi Technology Co., Ltd | Programmable resistive device and memory using diode as selector |
| US10249379B2 (en) | 2010-08-20 | 2019-04-02 | Attopsemi Technology Co., Ltd | One-time programmable devices having program selector for electrical fuses with extended area |
| US9251893B2 (en) | 2010-08-20 | 2016-02-02 | Shine C. Chung | Multiple-bit programmable resistive memory using diode as program selector |
| US10916317B2 (en) | 2010-08-20 | 2021-02-09 | Attopsemi Technology Co., Ltd | Programmable resistance memory on thin film transistor technology |
| US10229746B2 (en) | 2010-08-20 | 2019-03-12 | Attopsemi Technology Co., Ltd | OTP memory with high data security |
| US9236141B2 (en) | 2010-08-20 | 2016-01-12 | Shine C. Chung | Circuit and system of using junction diode of MOS as program selector for programmable resistive devices |
| US9460807B2 (en) | 2010-08-20 | 2016-10-04 | Shine C. Chung | One-time programmable memory devices using FinFET technology |
| US9070437B2 (en) | 2010-08-20 | 2015-06-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink |
| US9019791B2 (en) | 2010-11-03 | 2015-04-28 | Shine C. Chung | Low-pin-count non-volatile memory interface for 3D IC |
| US8988965B2 (en) | 2010-11-03 | 2015-03-24 | Shine C. Chung | Low-pin-count non-volatile memory interface |
| US9076513B2 (en) | 2010-11-03 | 2015-07-07 | Shine C. Chung | Low-pin-count non-volatile memory interface with soft programming capability |
| US9496265B2 (en) | 2010-12-08 | 2016-11-15 | Attopsemi Technology Co., Ltd | Circuit and system of a high density anti-fuse |
| US10192615B2 (en) | 2011-02-14 | 2019-01-29 | Attopsemi Technology Co., Ltd | One-time programmable devices having a semiconductor fin structure with a divided active region |
| US8848423B2 (en) | 2011-02-14 | 2014-09-30 | Shine C. Chung | Circuit and system of using FinFET for building programmable resistive devices |
| US10586832B2 (en) | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
| US9136261B2 (en) | 2011-11-15 | 2015-09-15 | Shine C. Chung | Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection |
| US9324849B2 (en) | 2011-11-15 | 2016-04-26 | Shine C. Chung | Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC |
| US9076526B2 (en) * | 2012-09-10 | 2015-07-07 | Shine C. Chung | OTP memories functioning as an MTP memory |
| US9183897B2 (en) | 2012-09-30 | 2015-11-10 | Shine C. Chung | Circuits and methods of a self-timed high speed SRAM |
| US9165650B2 (en) * | 2013-02-07 | 2015-10-20 | Qualcomm Incorporated | Hybrid dynamic-static encoder with optional hit and/or multi-hit detection |
| US9412473B2 (en) | 2014-06-16 | 2016-08-09 | Shine C. Chung | System and method of a novel redundancy scheme for OTP |
| CN104464806A (zh) * | 2014-08-27 | 2015-03-25 | 北京中电华大电子设计有限责任公司 | 一种适用于eeprom和flash的灵敏放大器 |
| US9264021B1 (en) | 2014-08-29 | 2016-02-16 | Freescale Semiconductor, Inc. | Multi-bit flip-flop with enhanced fault detection |
| CN105183372B (zh) * | 2015-08-25 | 2018-01-30 | 中国科学技术大学 | 基于内容寻址存储的触发匹配装置和方法 |
| US9704575B1 (en) * | 2016-01-07 | 2017-07-11 | Globalfoundries Inc. | Content-addressable memory having multiple reference matchlines to reduce latency |
| US10726914B2 (en) | 2017-04-14 | 2020-07-28 | Attopsemi Technology Co. Ltd | Programmable resistive memories with low power read operation and novel sensing scheme |
| US10535413B2 (en) | 2017-04-14 | 2020-01-14 | Attopsemi Technology Co., Ltd | Low power read operation for programmable resistive memories |
| US11615859B2 (en) | 2017-04-14 | 2023-03-28 | Attopsemi Technology Co., Ltd | One-time programmable memories with ultra-low power read operation and novel sensing scheme |
| US11062786B2 (en) | 2017-04-14 | 2021-07-13 | Attopsemi Technology Co., Ltd | One-time programmable memories with low power read operation and novel sensing scheme |
| CN107508464A (zh) * | 2017-08-28 | 2017-12-22 | 东莞市长工微电子有限公司 | 一种电流反馈单边迟滞控制cot电源管理芯片控制电路 |
| US10770160B2 (en) | 2017-11-30 | 2020-09-08 | Attopsemi Technology Co., Ltd | Programmable resistive memory formed by bit slices from a standard cell library |
| CN110082593A (zh) * | 2018-01-25 | 2019-08-02 | 深圳市英特瑞半导体科技有限公司 | 一种相位测量方法及相位测量装置 |
| FR3077677B1 (fr) | 2018-02-06 | 2020-03-06 | Stmicroelectronics (Rousset) Sas | Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant |
| US10311941B1 (en) * | 2018-04-10 | 2019-06-04 | Micron Technology, Inc. | Apparatuses and methods for input signal receiver circuits |
| US10666438B2 (en) * | 2018-07-13 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Balanced coupling structure for physically unclonable function (PUF) application |
| EP3874504A4 (de) * | 2018-10-30 | 2022-06-15 | Hewlett Packard Enterprise Development LP | Ternärer inhaltsadressierbarer speicher mit dualem vergleich |
| TWI783767B (zh) * | 2021-11-02 | 2022-11-11 | 瑞昱半導體股份有限公司 | 記憶體分時控制裝置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5446685A (en) | 1993-02-23 | 1995-08-29 | Intergraph Corporation | Pulsed ground circuit for CAM and PAL memories |
| US5428565A (en) | 1994-03-11 | 1995-06-27 | Intel Corporation | Single stage sensing apparatus for a content addressable memory |
| JPH07282586A (ja) * | 1994-04-13 | 1995-10-27 | Fujitsu Ltd | 連想メモリの比較回路 |
| US5446686A (en) * | 1994-08-02 | 1995-08-29 | Sun Microsystems, Inc. | Method and appartus for detecting multiple address matches in a content addressable memory |
| KR100257059B1 (ko) * | 1995-03-17 | 2000-05-15 | 가나이 쓰도무 | 반도체 집적회로 |
| US6122707A (en) * | 1997-09-04 | 2000-09-19 | Nortel Networks Corporation | Content addressable memory system with self-timed signals and cascaded memories for propagating hit signals |
| JP2000066951A (ja) * | 1998-08-24 | 2000-03-03 | Oki Electric Ind Co Ltd | 多ビット一致検出回路 |
| US6253280B1 (en) * | 1999-03-19 | 2001-06-26 | Lara Technology, Inc. | Programmable multiple word width CAM architecture |
| CA2277717C (en) * | 1999-07-12 | 2006-12-05 | Mosaid Technologies Incorporated | Circuit and method for multiple match detection in content addressable memories |
| US6392910B1 (en) * | 1999-09-10 | 2002-05-21 | Sibercore Technologies, Inc. | Priority encoder with multiple match function for content addressable memories and methods for implementing the same |
| US6195277B1 (en) | 1999-09-13 | 2001-02-27 | Lara Technology, Inc. | Multiple signal detection circuit |
| US6542391B2 (en) * | 2000-06-08 | 2003-04-01 | Netlogic Microsystems, Inc. | Content addressable memory with configurable class-based storage partition |
| US6539466B1 (en) * | 2000-02-21 | 2003-03-25 | Hewlett-Packard Company | System and method for TLB buddy entry self-timing |
| CA2307240C (en) * | 2000-05-01 | 2011-04-12 | Mosaid Technologies Incorporated | Matchline sense circuit and method |
| US6269016B1 (en) * | 2000-06-19 | 2001-07-31 | Motorola Inc. | MRAM cam |
| US6543286B2 (en) * | 2001-01-26 | 2003-04-08 | Movaz Networks, Inc. | High frequency pulse width modulation driver, particularly useful for electrostatically actuated MEMS array |
| JP4773631B2 (ja) * | 2001-05-25 | 2011-09-14 | 富士通セミコンダクター株式会社 | 連想記憶装置及びプリチャージ方法 |
| US6618279B2 (en) * | 2001-08-06 | 2003-09-09 | International Business Machines Corporation | Method and apparatus for adjusting control circuit pull-up margin for content addressable memory (CAM) |
| US6845024B1 (en) * | 2001-12-27 | 2005-01-18 | Cypress Semiconductor Corporation | Result compare circuit and method for content addressable memory (CAM) device |
-
2000
- 2000-05-31 CA CA2310295A patent/CA2310295C/en not_active Expired - Lifetime
-
2001
- 2001-05-31 DE DE10196292T patent/DE10196292T1/de not_active Withdrawn
- 2001-05-31 WO PCT/CA2001/000797 patent/WO2001093274A1/en active Application Filing
- 2001-05-31 GB GB0229175A patent/GB2379545B/en not_active Expired - Lifetime
- 2001-05-31 US US10/296,884 patent/US6990001B2/en not_active Expired - Lifetime
- 2001-05-31 AU AU2001263688A patent/AU2001263688A1/en not_active Abandoned
- 2001-05-31 KR KR1020027016289A patent/KR100810778B1/ko active IP Right Grant
- 2001-05-31 CN CNB018133770A patent/CN1296938C/zh not_active Expired - Lifetime
-
2005
- 2005-11-23 US US11/285,197 patent/US7095640B2/en not_active Expired - Lifetime
-
2006
- 2006-07-24 US US11/459,420 patent/US7298637B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20060256601A1 (en) | 2006-11-16 |
| US6990001B2 (en) | 2006-01-24 |
| GB2379545A8 (en) | 2004-03-08 |
| CN1444767A (zh) | 2003-09-24 |
| GB2379545A (en) | 2003-03-12 |
| CA2310295C (en) | 2010-10-05 |
| GB0229175D0 (en) | 2003-01-22 |
| CN1296938C (zh) | 2007-01-24 |
| US20040130924A1 (en) | 2004-07-08 |
| US7298637B2 (en) | 2007-11-20 |
| US7095640B2 (en) | 2006-08-22 |
| KR100810778B1 (ko) | 2008-03-07 |
| GB2379545B (en) | 2004-11-10 |
| AU2001263688A1 (en) | 2001-12-11 |
| WO2001093274A1 (en) | 2001-12-06 |
| US20060083042A1 (en) | 2006-04-20 |
| CA2310295A1 (en) | 2001-11-30 |
| KR20030014256A (ko) | 2003-02-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: SATECH GROUP A.B. LLC (N.D.GES.D. STAATES DELA, US |
|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20141202 |