CN1996585B - Semiconductor element with semiconductor component embedded into a plastic housing - Google Patents
Semiconductor element with semiconductor component embedded into a plastic housing Download PDFInfo
- Publication number
- CN1996585B CN1996585B CN2006100641222A CN200610064122A CN1996585B CN 1996585 B CN1996585 B CN 1996585B CN 2006100641222 A CN2006100641222 A CN 2006100641222A CN 200610064122 A CN200610064122 A CN 200610064122A CN 1996585 B CN1996585 B CN 1996585B
- Authority
- CN
- China
- Prior art keywords
- system frame
- resilient coating
- semiconductor
- structure assembly
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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Abstract
The invention relates to a semiconductor device (1) including semiconductor device components embedded in plastic package compound, wherein a buffer layer (5) is at least partially arranged on surfaces of the semiconductor device components of the semiconductor device (1). The buffer layer is arranged between semiconductor components (28) and the plastic package compound (4) and the buffer layer (5) at least partially includes a thermoplastic material (6).
Description
Technical field
The present invention relates to a kind of semiconductor structure assembly with the semiconductor structure assembly that is embedded in the plastic casing, wherein, the surface of semiconductor structure assembly has a resilient coating at least in part.In addition, the invention still further relates to a kind of method of making semiconductor component, system frame and such one type resilient coating.
Background technology
Functional and reliability according to this manufacturing approach detection means.Owing to improved temperature, this method can cause forming crackle, even on the border between the material different of semiconductor component, causes delamination.Particularly between circuit carriers and plastic casing, forming crackle is a problem.
Between system frame and plastic casing, lacking to be bonded in causes aqueous vapor to accumulate in the boundary layer between system frame and the plastic casing in the semiconductor component.When being welded to semiconductor component on the printed circuit board (PCB) semiconductor component in the shortest time when room temperature is heated to 260 ℃ always aqueous vapor expand suddenly.The result that moisture expands suddenly crackle occurs and/or breaks in the housing of semiconductor component, this just is called " popcorn effect ".
In order to prevent that this popcorn effect from must stop the gathering in the boundary layer of moisture between semiconductor structure assembly and plastic casing.Through improving the bonding gathering that reduces moisture between semiconductor structure assembly surface and the plastic casing surface.In order to improve this bonding openly diverse ways.
US-5,554,569 disclose a kind of coarse method of flat conductor framework surface machinery that makes.Coarse surface can so that with the engagement of plastic casing, and therefore better tack is arranged.Yet this method is carried out difficulty, and cost is high.
Also disclose and before installing, on system frame, applied adhesive.In US 5122858, on the flat conductor framework, apply the one layer of polymeric layer.
DE 10124047 discloses a kind of method that has the electronic component of semiconductor chip and system frame and make this member; Wherein, The metal system support has one by metal oxide, and particularly metallic zinc, chromium are processed, and forms the adhesion layer of the electroplating deposition of branch form.
This member and manufacturing approach have following shortcoming; Promptly can only on the metal surface, produce this type branch form through electroplating deposition; But so just under the situation of the layer that the metal with short circuit that does not have the front can conduct electricity, can not be the semiconductor structure assembly, produce this adhesive agent layer like the system frame of processing by pottery or printed circuit board material.
Also need improve the reliability of " green " member of the forward requirement that must satisfy the environmental protection law.Particularly hope to use unleaded scolder.Yet lead-free solder has drawback, promptly needs 260 ℃ of higher welding temperatures.So in " green " member, forming crackle is a special problem.
Summary of the invention
Therefore, task of the present invention provides a kind of semiconductor component with semiconductor structure assembly, and wherein, these semiconductor structure assemblies have the bonding reliably of a kind of and their plastic casing of encirclement.
This task is accomplished through a kind of like this semiconductor component with the semiconductor structure assembly that is embedded in the plastic casing: the surface that forms the semiconductor structure assembly at interface with plastic casing has a resilient coating at least in part; Said plastic casing has epoxy resin, and this resilient coating is arranged between semiconductor structure assembly and the plastic casing.Resilient coating is processed by a kind of thermoplastic at least in part, and this resilient coating directly extends between semiconductor structure assembly and plastic casing.
Resilient coating with thermoplastic according to the present invention has following advantage, i.e. its high resilience and be viscoelastic.The thermoplastic of this resilient coating can soften and repeat and flows when temperature surpasses its glass transformation temperature.Therefore thermoplastic can flow among the crackle and bubble that occur between semiconductor structure assembly and the plastic casing.This function shows in disclosed adhesive agent layer, and what the present invention stipulated is complete another kind of scheme.Therefore be anchored perhaps improved compound and the adhesive agent layer that designs is different according to the effect of resilient coating of the present invention with according to improved machinery.
After on the construction package that has embedded, crackle occurring in the semiconductor component of coating adhesive agent layer, these crackles can not be repaired.Therefore people attempt to improve bonding between semiconductor structure assembly and the plastic casing by improved adhesive agent layer usually.This for example reaches through a kind of layer of porous, is anchored to improve machinery.This can alternatively can accomplish by some polymer, and these polymer have definite chemical end group, and these chemical end groups have a kind of special affinity for the material of construction package.
The present invention's regulation is a kind of semiconductor component with self-regeneration mechanism on the contrary.The different coefficient of expansion owing to the material of member when improving temperature forms crackle.Thermoplastic has such characteristic, and promptly it can repeatedly flow when temperature surpasses its glass transformation temperature.For example in test process when on the chip island of flat conductor framework and the border between the plastic casing, crackle occurring these crackles can fill and lead up through softening the mobile of thermoplastic of resilient coating.Therefore, in member according to the present invention, in test process, can take place to form crackle and repair these crackles.In construction package according to the present invention, can not only make flawless member, and the member of the crackle that produces after a kind of can the reparation automatically can be provided to client.
Another advantage is that thermoplastic also can stop spreading of crackle, has so just improved in continuing test process and the reliability of operating construction package.Therefore the stability and the reliability that have shown this construction package.
Another advantage of this semiconductor component is; Can on all surface of the semiconductor structure assembly of processing by different materials, resilient coating be set, so just between metal surface, ceramic surface and/or other frosting of semiconductor component and the plastic casing for example processed, form a waterproof and etch-proof boundary layer by a kind of epoxy resin.In addition also can be on the system frame of the ceramic wafer of metal coating or printed circuit board (PCB) with corresponding constructionization coated with buffer layer.
Optimized technical scheme of the present invention draws hereinafter.
Thermoplastic has the glass transformation temperature (Tg) that is lower than 150 ℃ in one embodiment.This thermoplastic is softening, and when being lower than 150 ℃ of temperature, flows, and the application when being fit to the highest probe temperature and being 150 ℃.This can make thermoplastic softening, and the crackle that during test process, occurs can be filled and led up.Can be client flawless member is provided.
Thermoplastic has the glass transformation temperature (Tg) that is lower than 120 ℃ in another embodiment.This material has the advantage that when reaching 121 ℃ of typical autoclave temperature, can flow.
Thermoplastic advantageously has the fusion temperature (Tm) that is higher than 260 ℃.260 ℃ is no lead solder the highest employed brazing temperature, and typically is the maximum temperature that maximum temperature and member to member loading should bear.Therefore the thermoplastic that has a resilient coating that is higher than 260 fusion temperature is stable on member soldering printed circuit board (PCB) above that the time.
Thermoplastic can be polyamide 66, polyamide 46, sulfuration polyphenylene oxide, PETG, PAEK, polyether-ether-ketone, perhaps Merlon, the copolymer that perhaps is made up of these materials.
Resilient coating can have 2nm≤D≤10 μ m, preferred 2nm≤D≤300nm, the average thickness D between preferred 2nm≤D≤50nm.Thickness can be so selected, the surface of confirming material can be covered, but and paint-on technique optimization.This causes the effect more reliably of resilient coating.
Resilient coating has a kind of adhesive in another embodiment.This execution mode has following advantage, i.e. the both adhesiveness of improvement and plastic casing and semiconductor structure assembly can realize the advantage of above-mentioned stress compensation and crackle repairing effect simultaneously again.
Adhesive is contained in the structure of thermoplastic in one embodiment.The advantage of this way is on the surface of semiconductor component to be embedded, only to apply one deck.This way has simplified manufacturing approach, and has reduced manufacturing cost.
Adhesive is coated on the thermoplastic with the form of coating in another embodiment.The benefit of this way is the not combination of the structure compatible of regulation thermoplastic and adhesive.
Adhesive can be epoxides, polyimides, polyacrylate, metal oxide or conductor oxidate.The mixture that also can imagine these materials is used as adhesive.These materials have following advantage, and promptly they have and in the semiconductor structure assembly, are used as the characteristic that adhesive agent layer is fit to.
In another embodiment of the present invention, the porosity of the resilient coating little by little atresia coating from the semiconductor structure assembly surface is increased to the micropore form the transitional region of plastic casing.The border surface of surface in the metal-plastic junction that makes the semiconductor structure assembly that increase gradually through the porosity from the resilient coating that begins to seal to the micropore form on surface avoids corrosion, and increases the engagement of having strengthened with plastic casing gradually along with the increase porosity of buffer layer thickness.The material of adhesive combines with the plastic casing of polymerization is whole in this case.This internal structure through adhesive has also reduced the stress in the border surface further.
According to of the present invention another preferred embodiment in, semiconductor component have have structurized metal coating wiring matrix as the semiconductor structure assembly.This wiring matrix use disclosed so far technology can only be in the zone of structurized metal coating coated with buffer layer; And adopt conventional method can not give the surf zone electroplated coating of insulation, only if people take a risk whole wiring matrix metal coating that approach, short circuit.But the purpose and the task of this and such wiring matrix contradict, and promptly should between the different elements of semiconductor component, set up closing line and conductor circuit by structurized metal coating.In resilient coating according to the present invention, both given the zone of nonconducting wiring matrix, and a resilient coating fully and all the time had been set unchangeably also for matrix areas with structurized metal coating.
In another embodiment of the present invention, semiconductor component have have structured metal layer ceramic substrate as the semiconductor structure assembly.Such multi-layer ceramics matrix is used to make the semiconductor component of high frequency technique.Also can the ceramic surface of semiconductor structure assembly fully be provided with a resilient coating at this through resilient coating according to the present invention.
In addition the regulation, semiconductor component have have the structuring metal coating printed circuit board (PCB) as the semiconductor structure assembly.The zone of insulation board also can be coated with last layer according to resilient coating of the present invention as the structurized metal coating on the printed circuit board (PCB) in this case, like this, just can be arranged compact the connection with the plastic casing that covers printed circuit board (PCB).
Another aspect of the present invention relates to a kind of system frame with semiconductor component position abreast a plurality of and/or that in turn be provided with by line and/or file ground.Such system frame is used for the semiconductor structure assembly is received into the three-dimensional wire structures with the inner contact surface that is used for being electrically connected with semiconductor chip, and these semiconductor component positions have a kind of wire structures that has the solid of the inner contact surface that is used for being electrically connected with semiconductor chip.When making semiconductor component; Has a resilient coating with plastic casing constitutes the interface selectively according to system frame of the present invention surface; This resilient coating has thermoplastic at least in part; Wherein plastic casing has epoxy resin, and this resilient coating directly extends between semiconductor structure assembly and plastic casing.The inner contact surface of system frame does not have adhesive agent layer in this case.
Resilient coating this on its composition with its form on identical with the sort of resilient coating that is described in detail that is used in the above be coated on the semiconductor structure assembly.Therefore, system frame can have a kind of ceramic substrate of structuring metal coating or matrix that connects up of having, and perhaps has the printed circuit board (PCB) that has the structuring coating.Apply one deck selectively according to resilient coating of the present invention on the surface that system frame can be when making semiconductor component with plastic casing contacts in all situation.
Have the interior contact of band as if system frame and connect surperficial interior flat conductor then particularly like this.Flat conductor changes outer flat conductor in these, and by a system frame frame supporting of system frame.The flat conductor framework can have a flat conductor band that has many semiconductor component positions that set gradually in this case.
Interior flat conductor has resilient coating on their surface, the composition of this resilient coating and being described in detail above the structure.Yet inner contact surface, outer flat conductor and system frame framework still do not have resilient coating.This system frame is to make the semi-finished product of semiconductor component, can be by semi-conductor industry provide producer as semi-finished product production.
This system frame has hole for its location in fitting machine along the system frame framework in another the favourable execution mode with system frame that resilient coating selectively is set.This way has following advantage, promptly on such belt system frame, can automatically produce many semiconductor components.
In addition, system frame preferably can have a metal-alloy plated layer that is made up of silver and/or scolder-alloy at inner contact surface.In this case, contact connects the surface does not only have adhesive agent layer, but even also promotes the coating of soldering or connection procedure to cover with one.
Of the present invention another preferred embodiment in the reference material of system frame constitute by high purity copper and/or copper alloy, these materials are because their high conductive capabilities and favourable.
The method that is used to make the system frame of semiconductor component has following method step: the matrix substrate that at first will have at least one metal surface carries out structuring, makes it be designed to a system frame.In structurizing process, produce the many continuous model that is used for the semiconductor structure assembly is contained in the semiconductor component position.Surface-these surfaces of giving system frame then when making semiconductor component with plastic casing formation boundary face-coating one deck resilient coating, wherein, plastic casing has epoxy resin.According to the present invention, this resilient coating is made up of a kind of thermoplastic at least in part, and this resilient coating directly extends between semiconductor structure assembly and plastic casing.
When continuing preferably to implement this method, cover for the surf zone that should expose with protective layer before the system frame coated with buffer layer.This protective layer is expanded, so just can it taken off from overlap surf zone to be exposed.
When continuing preferably to implement this method, surf zone to be exposed is just to expose again later at the surface-coated resilient coating of giving system frame.In this method, before exposing, can protect by the corresponding surf zone that keeps resilient coating.Exposing available laser ablation method is perhaps undertaken by the plasma etching method.
The method that is used for adopting the system frame of the uncoated resilient coating with a plurality of semiconductor components position to make a plurality of semiconductor components additionally has following method step: semiconductor structure assembly, for example semiconductor chip are installed to the system frame in the semiconductor component position; Wherein, through electrical connecting element semiconductor chip being connected the surface with the contact of system frame couples together; Resilient coating is coated on the surface of the semiconductor structure assembly that should be embedded in the plastic casing; Wherein, Plastic casing has epoxy resin, and resilient coating is processed by a kind of thermoplastic at least in part, and this resilient coating directly extends between semiconductor structure assembly and plastic casing; The semiconductor structure assembly is embedded in the plastic casing; System frame taken apart be single semiconductor structure assembly.
Therefore, at first be provided at the system frame that is coated with resilient coating on its surface selectively.Selection be meant only cover system frame with resilient coating should form the surf zone in boundary layer with plastic casing.The chip that the contact that is used to be electrically connected connects the surface and/or is used for contacting with semiconductor chip is connected the surface and does not then apply adhesive agent layer.
To like semiconductor chip, be installed on such system frame at the semiconductor structure assembly in the semiconductor component position now, wherein, through electrical connecting element the contact of semiconductor chip and system frame is connected the surface and connects.After whole semiconductor structure assembly being installed to system frame, these semiconductor structure assemblies are embedded in the plastic casing.Can take into this system frame apart single semiconductor component then.
In this method, system frame itself can be a printed circuit board (PCB) with metal structure, or the ceramic wafer of a multilayer, or the flat conductor framework of a metal.The advantage of this method is that the material of coated with buffer layer and semiconductor structure assembly is irrelevant.Like this, metal upside-down mounting contact point also has the metal bond line resilient coating also to be set as the surface of semiconductor chip and the surface of system frame.Before the semiconductor structure assembly is not embedded in the plastic casing semiconductor structure assembly also coated with buffer layer is not answered in the surface of coating yet the time special this characteristic of using resilient coating.
In a kind of alternative method that adopts system frame manufacturing semiconductor component, also can use a kind of system frame that has just begun to have no resilient coating.In first step, will pack on this system frame, and wherein, be connected the surface and couple together in order to be electrically connected contact with semiconductor chip and system frame at semiconductor structure assembly in the semiconductor component position such as semiconductor chip.To be coated to by the resilient coating that thermoplastic constitutes on the whole surface of semiconductor structure assembly after this, and these semiconductor structure assemblies should be embedded among the plastic casing.Then these semiconductor structure assemblies that are provided with resilient coating are embedded in the plastic casing.
Can take into this system frame apart single semiconductor component then.The task of semiconductor production producer is at first all semiconductor structure assemblies all to be installed on the conventional carrier in the method, then resilient coating is coated on the surface of these semiconductor structure assemblies.The advantage of this alternative method is that none does not coat resilient coating with the plastic casing covered surfaces.
Description of drawings
By accompanying drawing the present invention is elaborated below:
Fig. 1 is the cross-sectional view according to the semiconductor component that scribbles resilient coating selectively of a kind of first execution mode of the present invention,
Fig. 2 is the cross-sectional view according to the semiconductor component of a kind of second execution mode of the present invention, and the surface of the semiconductor structure assembly that in this semiconductor component, has embedded all scribbles resilient coating,
Fig. 3 is the sectional view according to the semiconductor structure assembly of a kind of the 3rd execution mode of the present invention, and in addition, resilient coating also has a kind of adhesive in this semiconductor component.
Embodiment
Fig. 1 representes a sectional view with semiconductor structure assembly 1 of a semiconductor chip 2 and a flat conductor framework 3.The zone that is embedded in the plastic casing 4 of flat conductor framework 3 is coated with a resilient coating 5.Resilient coating 5 is processed by a kind of thermoplastic 6, and this material is a polyamide 66 in this embodiment.
The flat conductor frame adds 3 and has a chip island 7 and a plurality of flat conductors 8 that surround this chip island 7.Each flat conductor has interior zone 9 and the perimeter 10 of an outside that is positioned at plastic casing 4 of the inside of a plastic casing 4 that embeds member 1.The outer contact of the perimeter 10 regulation semiconductor components of flat conductor 8, with these outer contacts can semiconductor component 1 is mounted thereto printed circuit board (PCB) on.The interior zone 9 of each flat conductor 8 has an inner contact surface 11.Flat conductor framework 3 has Cu, and inner contact surface 11 has a Ni/NiP layer.
The back side of the inertia of semiconductor chip 2 is installed on the chip island 7 through adhesive phase 12.The upper surface of the activity of semiconductor chip 2 has unshowned integrated circuit and chip contact surface 13 in Fig. 1.Chip contact surface 13 is electrically connected with flat conductor 8 through closing line 14.Closing line 14 extends between chip contact surface 13 and an inner contact surface 11 respectively.
The interior zone 9 of semiconductor chip 2, closing line 14, chip island 7 and flat conductor 8 is embedded in the plastic casing 4.Plastic casing 4 has epoxy resin 15.
The interior zones 9 in plastic casing 4 inner embeddings of flat conductor framework 8 are coated with the resilient coating 5 that one deck is made up of thermoplastic 6.Central area-the semiconductor chip of inner contact surface 11 and chip island 7 is 2 mounted thereto-be not coated with resilient coating 5.
In this execution mode, be provided with a flat conductor framework 3 that is coated with resilient coating 5 selectively.Semiconductor chip 2 is installed on the chip island 7, and closing line 14 is arranged between the inner contact surface of chip contact surface 13 and flat conductor 8.The zone that scribbles resilient coating 5 of semiconductor chip 2, closing line 14 and flat conductor framework 3 is embedded in the plastic casing 4, to make semiconductor component 1.
Resilient coating 5 before member is installed by immersion coating on flat conductor framework 3.Preceding, cover with the perimeter 10 of protective layer, so that make these zones avoid coating the thermoplastic 6 of resilient coating 5 with inner contact surface 11 and flat conductor 8.
So because the metallic flat lead frame has the different coefficients of expansion with plastic casing and can form crackle.Therefore when improving temperature, for example do in the test process, perhaps when soldering, form crackle in manufacturing firm.The resilient coating of being processed by thermoplastic has the advantage that thermoplastic can soften and can flow when temperature raises.Therefore, these crackles that in test process, occur also can be filled and led up in test process and obtain repairing in member according to the present invention.
The resilient coating 5 that is made up of a kind of thermoplastic 6 has following advantage, and promptly this thermoplastic can repeatedly soften and flow when temperature surpasses the glass transformation temperature of thermoplastic 6.The glass transformation temperature of polyamide 66 is approximately 80 ℃, and it is lower than the maximum temperature that in test process, is reached.Thermoplastic 6 can fill up this crackle or gap when in test process, between metallic flat lead frame 8 and plastic casing 15, crackle or gap occurring.
Table 1 expression is applicable to the different thermoplastic according to resilient coating 5 of the present invention.Every kind of material has glass transformation temperature that is lower than 150 ℃ and the fusion temperature that is at least 260 ℃.
The glass transformation temperature (Tg) that is lower than 150 ℃ has following advantage, promptly typically during high probe temperature thermoplastic softening and flow.The fusion temperature that is higher than 260 ℃ has following advantage, and promptly thermoplastic keeps stable when the soldering member.
Fig. 2 representes a semiconductor component 16 according to second execution mode of the present invention.Semiconductor component 16 has one around wiring matrix 17 in this embodiment.This matrix 17 has inner contact surface 11 at its upper surface, and this inner contact surface has copper, and this matrix 17 has outer contacting surface 19 on its lower surface 18.Inner contact surface 11 is electrically connected with outer contacting surface 19 through guide rail 20 and through-contacts 21.Guide rail 20 and through-contacts 21 form matrix 17 around wire structures.Matrix 17 has a dielectric layer 22 in this embodiment.Guide rail is arranged on the upside and the downside of dielectric layer 22.
The back side of semiconductor chip 2 is fixed on the upside of matrix 17 by a fixed bed 12.Chip contact surface 13 is electrically connected with inner contact surface 11 through closing line 14.Chip contact surface 13 has aluminium, and closing line 14 has gold.
All surfaces that embedded of semiconductor structure assembly 28 all scribble resilient coating 5 among the embodiment that in Fig. 2, is seen.
Semiconductor structure assembly 28 just is meant those semiconductor structure assemblies that are embedded in the plastic casing in this respect.Semiconductor chip 2, closing line 14 and be exactly the semiconductor structure assembly in the execution mode of Fig. 2 around the upside of wiring matrix 17.Therefore closing line, semiconductor chip 2 and all use resilient coating 5 coverings around the surface of the upside of wiring matrix 17.
Resilient coating 5 has a kind of thermoplastic in this embodiment, has adhesive parts 23 in addition.The adhesive parts are contained in the structure of thermoplastic.Adhesive parts 23 improve bonding between thermoplastics 6 and the plastic casing 4 and between semiconductor device that has embedded and the plastic casing 4.Adhesive is a polyimides in this embodiment.Closing line 14, semiconductor chip 2 and all be coated with resilient coating 5 around the surface of the upside of wiring matrix 17.This can be undertaken by spraying or flooding.
Through following method manufacturing according to construction package 16 of the present invention.Semiconductor chip 2 is installed in the upper side of matrix 17 by a fixed bed 12.Between the inner contact surface 11 of chip contact surface 13 and matrix 17, produce closing line 14 and connect, so semiconductor chip 2 is electrically connected with matrix 17.Resilient coating 5 is coated on closing line, semiconductor chip 2 and the surface around the upside of wiring matrix 17, and the surface is fully with resilient coating 5 coverings like this.
Upper side with the coating of the closing line 14 of the semiconductor chip 2 of coating, coating and matrix 17 is embedded in the plastic casing 4 then.Can outer contact be installed on the outer contact surface then, so just can member 16 be installed on the printed circuit board (PCB).Can detect this construction package 16 then.
Fig. 3 representes a diagrammatic cross-sectional view with semiconductor component 24 of flat conductor framework 3, and the surface of the semiconductor structure assembly that embeds in the figure all is coated with last layer resilient coating 5.Resilient coating 5 has a ground floor that is made up of a kind of thermoplastic 6 and one by the second layer that has adhesive 27 26 in this execution mode.Therefore this adhesive 27 is arranged on the thermoplastic 6.
Semiconductor structure assembly 28 is inner regions 9 of semiconductor chip 2, closing line 14, chip island 7 and flat conductor 8 in the execution mode of Fig. 3.
Adhesive agent layer 27 has a kind of metal oxide, and adhesive agent layer is provided with the rough surface of porous in this embodiment.Rough surface improves the machinery that embeds between semiconductor structure assembly 28 and the plastic casing 4 and is anchored.
Additional adhesive agent layer 26 has following advantage, promptly improves adhering between plastic casing 4 and the plastic material 6 and between the semiconductor structure assembly of plastic casing 4 and flat conductor framework 3 and other embedding.Because this adhesive 27, this design has further reduced the formation risk of crack, and is provided with a mechanism of when crackle occurring, filling and leading up these crackles with thermoplastic simultaneously.
In this semiconductor component, for whole semiconductor structure assembly 3 coated with buffer layer 5 all after they are installed to flat conductor framework 3 of the surface attachment between the surface of improving semiconductor structure assembly 3 and plastic casing 4.It at first is the layer 25 that surface-coated is made up of thermoplastic 6.On thermoplastic material layer 25, coat layer of adhered agent layer 26 then again.
Reference numerals list
1 first semiconductor component
2 semiconductor chips
3 flat conductor frameworks
4 plastic casings
5 resilient coatings
6 thermoplastics
7 chip islands
8 flat conductors
The inner region of 9 flat conductors
The exterior domain of 10 flat conductors
11 inner contact surfaces
12 adhesive
13 chip contact surfaces
14 closing lines
15 epoxy resin
16 second semiconductor components
17 around wiring matrix
18 downsides
19 outer contacting surface
20 guide rails
21 through-contacts
22 dielectric materials
23 adhesives
24 the 3rd semiconductor components
25 ground floors
26 second layers
27 metal oxides
28 semiconductor structure assemblies
Claims (58)
1. the semiconductor component (1 that has the semiconductor structure assembly (28) that is embedded in the plastic casing (4); 16; 24); Wherein, Plastic casing (4) has epoxy resin (15); The surface that forms the said semiconductor structure assembly (28) at interface with plastic casing (4) has a resilient coating (5) at least in part, and this resilient coating is arranged between semiconductor structure assembly (28) and the plastic casing (4), and wherein this resilient coating (5) is processed by a kind of thermoplastic (6) at least in part; This resilient coating directly extends between semiconductor structure assembly and plastic casing, and the porosity of wherein said resilient coating (5) little by little is increased to the micropore form the transitional region of plastic casing (4) from the lip-deep imporosity coating of semiconductor structure assembly (28).
2. according to the described semiconductor component (1 of claim 1; 16; 24), it is characterized in that said thermoplastic (6) has the glass transformation temperature (Tg) that is lower than 150 ℃.
3. according to the described semiconductor component (1 of claim 2; 16; 24), it is characterized in that said thermoplastic (6) has the glass transformation temperature (Tg) that is lower than 120 ℃.
4. according to each described semiconductor component (1 in the aforementioned claim; 16; 24), it is characterized in that said thermoplastic (6) has the fusion temperature (Tm) that is higher than 260 ℃.
5. according to each described semiconductor component (1 in the claim 1 to 3; 16; 24), it is characterized in that said thermoplastic (6) has polyamide 66, polyamide 46, sulfuration polyphenylene oxide, PETG, PAEK, polyether-ether-ketone or Merlon, the perhaps copolymer of these polymer.
6. according to each described semiconductor component (1 in the claim 1 to 3; 16; 24), it is characterized in that said resilient coating (5) has a kind of average thickness D between 2nm≤D≤10 μ m.
7. according to the described semiconductor component (1 of claim 6; 16; 24), it is characterized in that said resilient coating (5) has a kind of average thickness D between 2nm≤D≤300nm.
8. according to the described semiconductor component (1 of claim 7; 16; 24), it is characterized in that said resilient coating (5) has a kind of average thickness D between 2nm≤D≤50nm.
9. according to each described semiconductor component (1 in the claim 1 to 3; 16; 24), it is characterized in that in addition, said resilient coating (5) also has a kind of adhesive (23).
10. according to the described semiconductor component (1 of claim 9; 16; 24), it is characterized in that said adhesive (23) is contained in the structure of thermoplastic (6).
11. according to the described semiconductor component (1 of claim 9; 16; 24), it is characterized in that said adhesive (27) is arranged on the thermoplastic (6) as coating (26).
12. according to the described semiconductor component (1 of claim 9; 16; 24), it is characterized in that said adhesive (23; 27) has the perhaps mixture of these materials of epoxides, polyimides, polyacrylate, metal oxide or conductor oxidate.
13. according to each described semiconductor component (1 in the claim 1 to 3; 16; 24), it is characterized in that said semiconductor component (16) has the wiring matrix (17) that has structurized metal coating (11,19,20), as semiconductor structure assembly (28).
14. according to each described semiconductor component (1 in the claim 1 to 3; 16; 24), it is characterized in that said semiconductor component (16) has a ceramic substrate that has structurized metal level, as semiconductor structure assembly (28).
15. according to each described semiconductor component (1 in the claim 1 to 3; 16; 24), it is characterized in that said semiconductor component (1; 24) have a flat conductor framework (3), as semiconductor structure assembly (28), this lead frame has a chip island (7) and inner flat lead (9), and they carry out the transition to the outer flat conductor (10) as outer contact in the outside of plastic casing (4).
16. according to each described semiconductor component (1 in the claim 1 to 3; 16; 24), it is characterized in that said semiconductor component (1) has a semiconductor chip (2) as semiconductor structure assembly (28).
17. according to each described semiconductor component (1 in the claim 1 to 3; 16; 24), it is characterized in that said semiconductor component (1) has closing line (14) as semiconductor structure assembly (28).
18. have the system frame (3) of semiconductor component position side by side a plurality of and/or that in turn be provided with by line and/or by file; For these semiconductor component positions of holding semiconductor construction package (28) have a kind of wire structures (15) that has the solid of the inner contact surface (11) that is used for being electrically connected with semiconductor chip (2); Wherein, Surface (19) with the said system frame (3) at plastic casing (4) formation interface when making semiconductor component (1) has a resilient coating (5) at least in part; This resilient coating is processed by a kind of thermoplastic (6) at least in part; Wherein plastic casing (4) has epoxy resin (15); This resilient coating directly extends between semiconductor structure assembly and plastic casing, and wherein said inner contact surface (11) do not have resilient coating (5), and the porosity of wherein said resilient coating (5) is increased to the micropore form the transitional region of plastic casing (4) from the lip-deep imporosity coating of semiconductor structure assembly (28) gradually.
19., it is characterized in that said thermoplastic (6) has the glass transformation temperature (Tg) that is lower than 150 ℃ according to the described system frame of claim 18.
20., it is characterized in that said thermoplastic (6) has the glass transformation temperature (Tg) that is lower than 120 ℃ according to the described system frame of claim 19.
21., it is characterized in that said thermoplastic (6) has the fusion temperature (Tm) that is higher than 260 ℃ according to each described system frame in the claim 18 to 20.
22. according to each described system frame in the claim 18 to 20; It is characterized in that; Said thermoplastic (6) has polyamide 66, polyamide 46, sulfuration polyphenylene oxide, PETG, PAEK, polyether-ether-ketone or Merlon, the perhaps copolymer of these polymer.
23., it is characterized in that said resilient coating (5) has a kind of average thickness D between 2nm≤D≤10 μ m according to each described system frame in the claim 18 to 20.
24., it is characterized in that said resilient coating (5) has a kind of average thickness D between 2nm≤D≤300nm according to the described system frame of claim 23.
25., it is characterized in that said resilient coating (5) has a kind of average thickness D between 2nm≤D≤50nm according to the described system frame of claim 24.
26., it is characterized in that said resilient coating (5) also has a kind of adhesive (23,27) according to each described system frame in the claim 18 to 20.
27., it is characterized in that said adhesive (23) is contained in the structure of thermoplastic (6) according to the described system frame of claim 26.
28., it is characterized in that said adhesive (27) is arranged on the thermoplastic (6) as coating (26) according to the described system frame of claim 26.
29., it is characterized in that said adhesive (23 according to the described system frame of claim 26; 27) has the mixture of epoxides, polyimides, polyacrylate, metal oxide or conductor oxidate or these materials.
30., it is characterized in that said semiconductor component (16) has a kind of wiring matrix (17) that has structurized metal coating (11,19,20), as semiconductor structure assembly (28) according to each described system frame in the claim 18 to 20.
31., it is characterized in that said semiconductor component (16) has a kind of ceramic substrate that has structurized metal level (11,19,20), as semiconductor structure assembly (28) according to each described system frame in the claim 18 to 20.
32., it is characterized in that said semiconductor component (1 according to each described system frame in the claim 18 to 20; 24) have a flat conductor framework (3), as semiconductor structure assembly (28), this flat conductor framework has a chip island (7) and an interior flat conductor (9), and they change the outer flat conductor (10) as outer contact in the outside of plastic casing (4).
33. according to the described system frame of claim 32; It is characterized in that; Said system frame (3) has the interior flat conductor (9) that has inner contact surface (11), and these inner contact surfaces change outer flat conductor (11) into and supported by a system frame frame, wherein; The flat conductor framework has a flat conductor band that has many semiconductor component positions that set gradually; Wherein, interior flat conductor (9) has resilient coating (5) on their surface, and wherein contact connection surface (11), outer flat conductor (10) and system frame framework do not have resilient coating (5).
34., it is characterized in that the system frame (3) with the resilient coating (5) that is provided with selectively has hole for its location in machinery is installed along the system frame frame according to each described system frame in the claim 18 to 20.
35., it is characterized in that said system frame (3) has metal-alloy-electrodeposited coating according to each described system frame in the claim 18 to 20 on contact connection surface (11).
36., it is characterized in that said metal-alloy-electrodeposited coating is processed by silver and/or solder alloy according to the described system frame of claim 35.
37., it is characterized in that said system frame (3) has high purity copper and/or copper alloy as basic material according to each described system frame in the claim 18 to 20.
38. make the method for the system frame (3) that is used for semiconductor component (1), this method has following method step:
-carry out structuring for matrix substrate with at least one metal surface, make it become a system frame (3) with a plurality of continuous models, this model is used for semiconductor structure assembly (28) is contained in the semiconductor component position of system frame (3);
-give the surfaces coated last layer resilient coating (5) of system frame (3); The surface of this system frame when making semiconductor component (1) with interface of plastic casing (4) formation; Wherein, Plastic casing (4) has epoxy resin (15); This resilient coating (5) is processed by a kind of thermoplastic (6) at least in part, and this resilient coating directly extends between semiconductor structure assembly and plastic casing, and the porosity of wherein said resilient coating (5) is increased to the micropore form the transitional region of plastic casing (4) from the lip-deep imporosity coating of semiconductor structure assembly (28) gradually.
39., it is characterized in that said resilient coating (5) carries out by means of dipping, injection or printing process according to the described method of claim 38.
40., it is characterized in that said resilient coating (5) is deposited on the surface of exposing of system frame (3) all sidedly according to claim 38 or the described method of claim 39.
41. according to claim 38 or 39 described methods, it is characterized in that, cover the surf zone that should expose with a kind of protective layer before for system frame (3) coated with buffer layer (5).
42. according to claim 38 or 39 described methods, it is characterized in that, expose at surf zone that should expose for system frame (3) coated with buffer layer (5) afterwards.
43., it is characterized in that in addition, said resilient coating (5) also has a kind of adhesive (23 according to claim 38 or 39 described methods; 27).
44. according to the described method of claim 43, it is characterized in that, after thermoplastic (6) deposition, on the surface of thermoplastic (6), apply adhesive (27).
45. according to claim 38 or 39 described methods, it is characterized in that, utilize a kind of average thickness D between 2nm≤D≤10 μ m to apply said resilient coating (5).
46., it is characterized in that said resilient coating (5) applies with the average thickness D between 2nm≤D≤300nm according to the described method of claim 45.
47., it is characterized in that said resilient coating (5) applies with the average thickness D between 2nm≤D≤50nm according to the described method of claim 45.
48. according to claim 38 or 39 described methods, this method has following additional method step:
-preparation is coated with the system frame (3) of resilient coating (5) from the teeth outwards selectively, and said surface and plastic casing (4) have a boundary layer, and wherein, contact connects not coating of surface (11);
-semiconductor structure assembly (28) is installed on the system frame (3) in the semiconductor component position, wherein, the inner contact surface (11) of semiconductor chip (2) with system frame (3) coupled together through electrical connecting element (14);
-semiconductor structure assembly (28) is embedded in the plastic casing (4);
-system frame (3) taken apart be single semiconductor component (1; 16; 24).
49. according to the described method of claim 48, it is characterized in that, before being embedded into semiconductor structure assembly (28) in the plastic casing (4), with semiconductor structure assembly (28) also not the surface of coating also use resilient coating (5) to apply.
50., it is characterized in that said semiconductor structure assembly (28) is set to semiconductor chip (2) according to the described method of claim 48.
51. adopt the system frame (3) of at first uncoated resilient coating (5) to make the method for a plurality of semiconductor components (1), comprise the following steps:
-semiconductor structure assembly (28) is installed to the system frame (3 in the semiconductor component position; 17) on, wherein, through electrical connecting element (14) semiconductor chip (2) is connected surface (11) with the contact of system frame (3) and couples together;
-resilient coating (5) is coated on the surface of the semiconductor structure assembly (28) that should be embedded in the plastic casing (4); Wherein, Plastic casing (4) has epoxy resin (15); Resilient coating (5) is processed by a kind of thermoplastic (6) at least in part, and this resilient coating directly extends between semiconductor structure assembly and plastic casing;
-semiconductor structure assembly (28) is embedded in the plastic casing (4);
-system frame (3) taken apart be single semiconductor structure assembly (1; 16; 24);
The porosity of-said resilient coating (5) is increased to the micropore form the transitional region of plastic casing (4) from the lip-deep imporosity coating of semiconductor structure assembly (28) gradually.
52. according to the described method of claim 51, it is characterized in that, accomplish coating surfaces for construction package (28) by means of dipping, injection or printing process.
53., it is characterized in that in addition, said resilient coating (5) also has a kind of adhesive (23 according to claim 51 or 52 described methods; 27).
54. according to the described method of claim 53, it is characterized in that, after thermoplastic (6) deposition, on the surface of thermoplastic (6), apply said adhesive (27).
55. according to claim 51 or 52 described methods, it is characterized in that, come coated with buffer layer (5) with a kind of average thickness D between 2nm≤D≤10 μ m.
56. according to the described method of claim 55, it is characterized in that, come coated with buffer layer (5) with a kind of average thickness D between 2nm≤D≤300nm.
57. according to the described method of claim 55, it is characterized in that, come coated with buffer layer (5) with a kind of average thickness D between 2nm≤D≤50nm.
58., it is characterized in that said semiconductor structure assembly (28) is set to semiconductor chip (2) according to the described method of claim 51.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005047856A DE102005047856B4 (en) | 2005-10-05 | 2005-10-05 | Semiconductor component with semiconductor device components embedded in a plastic housing composition, system carrier for accommodating the semiconductor device components and method for producing the system carrier and semiconductor components |
| DE102005047856.5 | 2005-10-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1996585A CN1996585A (en) | 2007-07-11 |
| CN1996585B true CN1996585B (en) | 2012-08-15 |
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|---|---|---|---|
| CN2006100641222A Expired - Fee Related CN1996585B (en) | 2005-10-05 | 2006-09-30 | Semiconductor element with semiconductor component embedded into a plastic housing |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7777352B2 (en) |
| CN (1) | CN1996585B (en) |
| DE (1) | DE102005047856B4 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE102005047856A1 (en) | 2007-04-19 |
| CN1996585A (en) | 2007-07-11 |
| US7777352B2 (en) | 2010-08-17 |
| DE102005047856B4 (en) | 2007-09-06 |
| US20070200258A1 (en) | 2007-08-30 |
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