CN1977370A - 铅焊料指示剂和方法 - Google Patents
铅焊料指示剂和方法 Download PDFInfo
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- CN1977370A CN1977370A CNA2005800217949A CN200580021794A CN1977370A CN 1977370 A CN1977370 A CN 1977370A CN A2005800217949 A CNA2005800217949 A CN A2005800217949A CN 200580021794 A CN200580021794 A CN 200580021794A CN 1977370 A CN1977370 A CN 1977370A
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- solder system
- solder
- indicator
- carrier
- lead
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 230000004907 flux Effects 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 230000000007 visual effect Effects 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 10
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 230000004927 fusion Effects 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- WCJLIWFWHPOTAC-UHFFFAOYSA-N rhodizonic acid Chemical compound OC1=C(O)C(=O)C(=O)C(=O)C1=O WCJLIWFWHPOTAC-UHFFFAOYSA-N 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000010992 reflux Methods 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000012360 testing method Methods 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 8
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- 239000010949 copper Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 238000005476 soldering Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 150000003839 salts Chemical class 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 235000018783 Dacrycarpus dacrydioides Nutrition 0.000 description 1
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- 238000003723 Smelting Methods 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TZBFEBDATQDIHX-UHFFFAOYSA-N n',n'-diethylhexane-1,6-diamine Chemical compound CCN(CC)CCCCCCN TZBFEBDATQDIHX-UHFFFAOYSA-N 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
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- 150000003505 terpenes Chemical class 0.000 description 1
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Abstract
一种焊料系(14)包括铅(Pb)指示剂和焊剂。一种用于形成半导体器件的方法包括:提供载体(52),将焊料系应用到载体(54),经由焊料系将端子耦接至载体(56),熔融焊料系以将端子贴附到载体并形成完整的半导体器件(58),以及确定完整的半导体器件是否具有与焊料系不同的预定性质(60)。
Description
技术领域
本发明通常涉及半导体器件,并且更具体地,涉及利用无铅焊料的半导体器件。
背景技术
日本和欧洲联盟政府制定了要求行业从它们的产品去除有害物质的政策,由此产生了“绿色”产品。一种目标材料,铅(Pb),是塑料球栅格阵列(PBGA)焊球和历史上用于将该部件贴附到板上的焊膏的主要组分。一般使用的含铅焊膏是共晶锡-铅(63wt%Sn/37wt%Pb),并且该球通常是共晶锡铅或还包括2%Ag(62wt%Sn/36wt%Pb/2wt%Ag)。作为上述法规的结果,半导体工业正移向无铅焊料。该工业中研究的无铅焊料通常包括例如锡(Sn)、银(Ag)、铜(Cu)、铟(In)、锑(Sb)和铋(Bi)的元素。
为了遵守上述法规,公司需要能够容易地区分无铅和含铅材料。例如,尤其是如果端子的成分是未知的话,装配工应该在焊接到它们的印刷电路板(PCB)之前检验半导体器件是无铅的。另外,当将无铅(无Pb)和含铅(含Pb)球贴附到球栅格阵列(BGA)基板上时使它们混合是有风险的,因此希望测试材料成分以避免这种风险。测试确定是否存在铅的一种方法包括执行分析测试,但这增加了制造的成本、时间和制造复杂性。
最通常使用的家用测试涂料和陶瓷盘的另一铅-测试(Pb-测试)方法,包括利用测试拭子,例如可由LeadCheck出售的铅-测试工具获得的那些。但测试拭子需要人工测试每种材料。这导致了增加的成本和增加的循环时间。因此,需要一种方式来检测材料是否无铅的,而不增加循环时间和增加成本。
附图说明
本发明借助实例示例并且不由附图限制,其中相同的附图标记表示相似的元件。
图1示例了在根据本发明实施例的回流工艺之前,具有通过焊料系(solder system)耦接至印刷电路板(PCB)基板的端子的半导体器件一部分的截面图;
图2示例了在根据本发明实施例的回流之后的图1的半导体器件;
图3示例了在根据本发明实施例的第一回流工艺之前,具有经由焊料系耦接至球栅格阵列(BGA)基板的球的半导体器件一部分的截面图;
图4示例了在根据本发明实施例的第一回流工艺之后的图3的半导体器件;
图5示例了在根据本发明实施例的第二回流工艺之前,耦接至PCD基板的图4的半导体器件;
图6示例了在根据本发明实施例的第二回流工艺之后图5的球;
图7示例了在根据本发明实施例的回流工艺之前,通过焊料系耦接至印刷电路板(PCB)基板的无铅半导体器件一部分的截面图;
图8示例了在根据本发明实施例的回流之后图7的半导体器件;和
图9示例了根据本发明实施例用于形成半导体器件的工艺。
熟悉技艺者意识到,各图中的元件为了简单和清楚被示例了并且未必按尺寸绘制。例如,在各图中一些元件的尺度可相对于其它元件放大,以帮助提高本发明实施例的理解。
具体实施方式
为了确定其是否遵守降低半导体产品中铅的规则,公司需要检测铅的简易方法;人工检查每个部分是不切实际的。可将化学制品加入到端子、端子涂层、载体、载体涂层、耦接部件至载体的焊料系、焊料系的涂层等。该端子可以是球(球体)、引线(例如,J-引线)、无引线、引脚、端盖、垫等。该端子可以是部分封装或独立的。该端子可以是四方扁平封装(QFP)上的J-引线、贴附到球栅格阵列(BGA)基板的球或仍未贴附到BGA基板上的球等。该载体可以是印刷电路板(PCB)、BGA基板、任一其它类型的基板或任一支撑结构。该焊料系可包括焊剂、焊膏等。
铅(Pb)指示剂,其是酸或盐的一个实施例,可加到载体、端子或焊料系;或形成为载体、端子或导电材料上的涂层。当受到升高温度时,如果存在的话,铅(Pb)指示剂与铅(Pb)反应,并且改变焊料系的性质。在一个实例中,铅(Pb)指示剂形成颜色,例如粉红色或黑色,与具有未反应铅(Pb)指示剂的材料的颜色不同。在一个实施例中,在回流工艺期间出现了反应,回流工艺用于熔融焊料系并形成焊料互连。
焊料系中的铅(Pb)指示剂可以应用到许多结构上。图1-8示例了受益于使用铅(Pb)指示剂的一些不同结构。图9示例了用于形成图2、4、6和8的所有焊料系的方法50。
在方法50的第一工艺52中,提供了载体。该载体可以是在前论述的任一载体,例如BGA基板或PCB。在第二工艺54期间,将焊料系应用到该载体上。在一个实施例中,焊料系包括铅(Pb)指示剂、焊剂和导电材料。导电材料可以是包括锡(Sn)和铅(Pb)的共晶成分的焊料粉末,并且焊剂可以是基于松香或基于清洗剂的液体。在第三工艺56中,端子经由焊料锡耦接至载体上。接下来,在第四工艺58中,将焊料系熔融以将端子贴附到载体上并形成完整的焊料互连。在一个实施例中,在回流工艺期间发生了熔融。在第五工艺60中,确定完整的焊料互连是否具有预定的性质,例如不同于焊料系的颜色。如果是,则存在铅。
图1示例了表示在熔融工艺之前QFP上的引线16的半导体器件10的截面图。半导体器件10包括设置在焊料系14中的引线16,该焊料系形成在导电垫11上。导电垫11形成在非导电材料13的凹口内,该非导电材料13与导电垫11电隔离。非导电材料13和导电垫11形成载体12。在一个实施例中,载体12是PCB基板,其中非导电材料13是有机材料,例如焊料掩模,并且导电垫包括铜或铜合金。在一个实施例中,导电垫11是载体12的导线的一部分,并且可以是一层或一种材料、或多层或多种材料。载体12可具有在非导电材料13和导电垫11上方的有机表面防护剂(OSP)涂层。在一个实施例中,OSP包括铅(Pb)指示剂。
引线16可以是任何的引线,例如L-形引线(示于图1中)。在一个实施例中,引线16具有脚部18,该脚部基本上平行于载体12。人工地、通过机器等将该脚设置在焊料系14上方。虽然图1中示出了仅一条引线,但是引线16可以是封装上的多条引线的一条,其在所有的图中实际是每条引线。
焊料系14可通过适合的工艺例如丝网印刷应用到载体12上。在一个实施例中,焊料系14包括焊剂和焊料粉末。在另一实施例中,焊料系14包括焊剂和铅(Pb)指示剂。在又一实施例中,焊料系14还包括焊膏,其可以是粉末。在一个实施例中,焊膏包括铅(Pb),例如63wt%锡(Sn)和37wt%铅(Pb)膏。在另一实施例中,焊膏是无铅(无-Pb)的,例如95.5wt%锡(Sn)、4wt%银(Ag)和0.5wt%铜(Cu)膏。焊剂可以是基于松香(例如,白松松香)或基于清洗剂基的有机酸。常规地,焊剂用于帮助减少氧化程度和在回流之前临时粘合焊料粉末。但焊剂还可以是用于铅(Pb)指示剂的载体。如所示例的,焊料系14由许多单独颗粒的焊料合金形成。
铅(Pb)指示剂可加到焊料系14上、放到或放入载体12、或放到或放入引线16,尤其是脚部18。换句话说,焊料系14、载体12或引线16可以是用于铅(Pb)指示剂的载体。铅(Pb)指示剂可混合到已经存在于该工艺中或应用为另外涂层的合成物中,例如液体中。铅(Pb)指示剂本身可以是液体。如果铅(Pb)指示剂位于载体上,则其可以位于载体12上的OSP涂层中。在该实施例中,载体12制造商或OSP制造商可在将铅(Pb)指示剂应用到载体12上之前将其混合到OSP涂层中。如果铅(Pb)指示剂分别放到或放入引线16,则其可以是引线上的涂层或被混合到用于制作引线的导电材料中。可以通过焊料系的制造商或通过焊料系的随后购买者将铅(Pb)指示剂混合到焊料中。
当在存在于半导体封装工艺中的任何条件期间铅(Pb)指示剂与铅(Pb)反应时,铅(Pb)指示剂可以是改变性质例如颜色的任何材料。在一个实施例中,当施加热时,铅(Pb)指示剂与焊料系中的铅(Pb)反应;如果存在一些铅(Pb),则铅(Pb)指示剂会改变焊料的性质,例如改变颜色或产生新化学制品。在优选实施例中,铅(Pb)指示剂是目视的铅指示剂并且可以通过目视检查检测。在一个实施例中,目视检查是人工的(例如,通过人眼),而在另一实施例中,目视检查是自动的(例如,通过机器)。在一个实施例中,自动目视检查使用白光或激光。在一个实施例中,机器检测当铅(Pb)指示剂与铅反应时存在的化学制品。在一个实施例中,铅(Pb)指示剂是盐或酸。例如,铅(Pb)指示剂可以是玫瑰红酸二钠盐,当其与铅反应时变成浅粉红色,或硫化钠,其与铅(Pb)反应以形成硫化铅(Pb),一种黑色沉淀。
在一个实施例中,当将热施加到焊料系时,铅(Pb)指示剂发生反应。在一个实施例中,当焊料系通过焊料回流炉输送或处理时施加热。如果焊料系14是无铅(无Pb)的,则最小温度可以是近似217摄氏度。如果焊料系14包括铅(Pb),则最小温度可以是近似183摄氏度。
图2示例了在形成焊料互连时回流之后的半导体器件10。焊料互连包括焊料,其将引线16耦接至载体12上。由于物理过程涉及回流,所以内圆角2可存在于焊料17的端部。另外,残余物19可存在于引线16的脚部18上。残余物19是焊料回流工艺的结果并可具有像蜡一样的连贯性。残余物19可包括铅(Pb)指示剂。如果不存在铅(Pb)指示剂,则残余物19通常是浅琥珀色或白色调。如果铅(Pb)指示剂是玫瑰红酸或者硫化钠并且存在铅,则残余物19将分别是粉红色或黑色,这取决于使用的铅(Pb)指示剂。残余物19存在于焊料17上方并且可与焊料交叠。为了清楚起见,残余物19的顶部用虚线表示。
可利用常规的清洗工艺、例如萜烯或水洗去除残余物。相信,在残余物19(或焊料17)中存在铅(Pb)指示剂将不会影响使用常规清洗工艺去除残余物和存在于残余物中的铅(Pb)指示剂的能力。换句话说,相信清洗工艺将不会由于存在铅(Pb)指示剂而变得更困难。
如图3和4所示,当将球(也称为球体)贴附于(BGA)基板上以形成半导体器件20时,铅(Pb)指示剂也是有用的。图3中的半导体器件20包括球26、载体22和焊料系24。载体22包括导电垫21和非导电材料23。载体22可以是BGA基板或平面栅格阵列(LGA),其是具有四方的、矩形的或其它形状垫的载体。导电垫21可以是任何的导电材料或材料层,例如铜。焊料系24可以是用于图1和2中的焊料系14所描述的任何材料。在图3所示的实施例中,焊料系24包括没有颗粒的焊剂。(示出焊料系24不具有单独颗粒的焊料合金。)但可以使用任何适合的焊料系。
在一个实施例中,机器从平台或栅格拾取球26并将球26放置到载体22上。希望知道放置在载体22上的球26是否包括铅(Pb)。例如,如果出售无铅(无Pb)部件,则公司不希望因为仅一个或几个球26包括铅(Pb)就丢弃BGA封装。通常,产品是越接近完成,就越不希望废弃该产品,因为制造产品花费的钱数在工艺的每个步骤都增加了。在一个实施例中,球26包括硫化钠并进行处理,例如高温处理(例如,大于179摄氏度),以便硫化钠与存在的铅反应。通过利用白光或激光,包括铅的球26将变黑,因此取放机将不会识别到存在球。换句话说,具有铅(Pb)的球的位置将看起来与不存在球的位置一样,因此该机器将跳过具有铅(Pb)的球。
可选地,在将球26贴附到载体22上的回流期间,铅(Pb)指示剂可以存在于载体22上的焊料系24中并与铅(Pb)反应。如图4所示,在回流之后焊料系24形成焊料互连。可使用用于图1和2的回流所描述的相同处理。在回流期间,焊料系24与球26融合并使球26变形。球26会变成半球体或变形球体,因为当其与焊料系24融合时,其直径扩大并且看起来在球26和导电垫21之间的界面处变平坦了。无论如何,如在本说明书中所使用的,不管其变形的形状,球26都将指的是球26。换句话说,处理时在不同阶段的球26具有不同的形状,并且甚至不是完整的球体。与图2类似,残余物28可存在并且可包括铅(Pb)指示剂。针对图2论述的相同的清洗工艺可以用于图4的半导体器件20。
在载体22提供有像球26一样的球之后,形成了包括半导体器件20的封装。(在图5和6中仅示出了半导体器件20的一小部分。)然后可将该封装贴附到另一载体上。将一部分封装和载体示例于图5中作为半导体器件30。将通过焊料(未示出)耦接至导电垫21的球26放置(例如,人工或通过机器)在焊料系34上,该焊料系34可以是在前论述的任何焊料系。焊料系34位于非导电材料33凹口中的导电垫31的上面。导电垫31和非导电材料33形成载体22。半导体器件30的这些部分可以与图1和2的导电垫、非导电材料13和载体12相同。事实上,图5和6与图1和2非常相似,除了在前者中,端子是BGA封装的球,而在后者中,端子是QFP的引线。
可利用关于图2在前论述的回流工艺回流半导体器件30,以便焊料系34变成焊料互连。在回流期间,焊料系34与球26融合并会使球26变形。球26会变成变形球体或桶形,因为当其耦接至载体22上时是在前变形的并且当耦接至载体32上时再次变形。不管其形状,元件26仍将称为球。
像在前论述的其它回流工艺一样,可存在残余物36。残余物36可包括铅(Pb)指示剂。如果铅存在于球26或焊料系34中,则铅(Pb)指示剂将改变焊料的性质(例如颜色)。如上所述,可以执行任何常规的清洗,来去除残余物36。
与图5和6相似,图7和8用载体44代替球26和载体22,该载体是无引线封装或无引线载体。在半导体器件40中,载体44可以是四方扁平无引线(QFN)封装、无引线LGA等。无引线载体44包括基板46和导电垫48。导电垫48可以是任何形状,例如四方形或矩形,如图7所示,或圆形。导电垫48可以是任何的导电材料,例如锡-铅(Sn-Pb)合金、镍-钯等。导电垫48放置在焊料系49上方,其可以是用于焊料系14、24和34中任一个在前论述的任何材料。焊料系49形成在导电垫41上方,该导电垫形成在非导电材料43的沟槽中。导电垫41和非导电材料43是载体42的一部分,该载体与载体12和22相似。同样,导电垫41像导电垫21和31一样,非导电材料43像非导电材料23和33一样。
在可以是在前论述的任一回流工艺的回流工艺之后,焊料系49变成焊料互连。半导体器件40经由焊料50将可以是无引线载体的载体44耦接至可以是PCB的载体42。像图2的焊料17一样,焊料50在相对端可具有由于在回流期间物理可应用引起的内圆角51。如果焊料50、导电垫48或导电垫41包括铅(Pb)指示剂,则如果焊料50、导电垫48或导电垫41包括铅(Pb),那么在回流之后焊料50将具有预定性质(例如颜色)的改变。尽管未示出,残余物可存在并可包括铅(Pb)指示剂。残余物可利用任何的常规清洗工艺去除。
在前述的说明书中,已参考具体实施例描述了本发明。然而,本领域普通技术人员意识到,可以进行各种修改和改变,而不脱离如以下在权利要求书中提出的本发明的范围。于是,说明书和附图认为是示例性的而不是限制意义的,并且所有的这种修改都意指包括在本发明的范围内。
以上已关于具体实施例描述了益处、其它优点和问题的解决方案。然而,益处、优点和问题的解决方案、以及会导致任何益处、优点、或发生或变得更显著的解决方案的任何要素都不解释为任何或所有权利要求的关键的、需要的或基本的特征或要素。如在此所使用的,术语“包括”或其变形,都意指覆盖非专有内含物,以便包括要素列表的工艺、方法、物品或设备不仅包括那些要素而且包括未明确列出的或这种工艺、方法、物品或设备固有的其它要素。如在此使用的,定义术语冠词“一”为一个或一个以上。而且,如果存在的话,在说明书和权利要求书中术语“前”、“后”、“顶”、“底”、“在……上方”、“在……下方”等,用于描述的目的并且未必用于描述永久的相对位置。可以理解的是,在适当的情形下如此使用的术语是可互换的,以便在此描述的本发明的实施例例如能够在不同于所示例的或在此描述的别的方式的其它方位上操作。如在此所使用的,术语“多个”定义为两个或两个以上。如在此所使用的,术语另一个定义为至少两个或两个以上。如在此所使用的,术语“耦接”定义为连接,尽管未必直接连接,并且未必是机械连接。
Claims (21)
1.一种用于将端子耦接至载体的焊料系,其中该焊料系包括:
用于检测铅(Pb)存在的铅(Pb)指示剂;和
用作铅(Pb)指示剂的载体的焊剂。
2.根据权利要求1所述的焊料系,其中焊料系包括载体上的涂层。
3.根据权利要求2所述的焊料系,其中载体选自由印刷电路板和球栅格阵列基板组成的组。
4.根据权利要求1所述的焊料系,其中焊料系进一步包括导电材料。
5.根据权利要求1所述的焊料系,其中导电材料包括焊料粉末。
6.根据权利要求5所述的焊料,其中导电材料无铅(Pb)。
7.根据权利要求5所述的焊料,其中导电材料包括铅(Pb)。
8.根据权利要求1所述的焊料系,其中铅(Pb)指示剂包括目视铅(Pb)指示剂。
9.根据权利要求8所述的焊料系,其中目视铅(Pb)指示剂包括酸。
10.根据权利要求9所述的焊料系,其中目视铅(Pb)指示剂包括玫瑰红酸。
11.根据权利要求8所述的焊料系,其中目视铅(Pb)指示剂包括硫化钠。
12.根据权利要求1所述的焊料系,其中端子包括选自由引线、球、引脚、端盖和垫构成的组的导电结构。
13.一种用于形成半导体器件的方法,该方法包括:
提供载体;
将焊料系应用到载体,其中焊料系包括:
铅(Pb)指示剂;和
焊剂;和
经由焊料系将端子耦接至载体;
熔融焊料系以将端子贴附到载体并形成完整的半导体器件;
确定完整的半导体器件是否具有与焊料系不同的预定性质。
14.根据权利要求13所述的方法,其中确定进一步包括目视检验完整的半导体器件。
15.根据权利要求13所述的方法,其中应用焊料系进一步包括应用焊料系,其中焊料系进一步包括导电材料。
16.根据权利要求13所述的方法,其中应用焊料系进一步包括应用焊料系,其中焊剂用作铅(Pb)指示剂的载体。
17.根据权利要求13所述的方法,其中应用焊料系进一步包括应用焊料系,其中铅(Pb)指示剂进一步包括目视铅(Pb)指示剂。
18.根据权利要求13所述的方法,其中应用焊料系进一步包括在载体上应用焊料系作为涂层。
19.根据权利要求13所述的方法,其中应用焊料系进一步包括应用焊料系,其中铅(Pb)指示剂包括玫瑰红酸。
20.根据权利要求13所述的方法,其中应用焊料系进一步包括应用焊料系,其中铅(Pb)指示剂包括硫化钠。
21.根据权利要求13所述的方法,其中确定进一步包括确定完整的半导体器件是否具有与焊料系不同的颜色。
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US10/879,242 US7074627B2 (en) | 2004-06-29 | 2004-06-29 | Lead solder indicator and method |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN103026804A (zh) * | 2010-08-02 | 2013-04-03 | 奥斯兰姆奥普托半导体有限责任公司 | 光电发光模块和汽车大灯 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7251880B2 (en) * | 2001-09-28 | 2007-08-07 | Intel Corporation | Method and structure for identifying lead-free solder |
JP5056951B2 (ja) * | 2008-10-30 | 2012-10-24 | トヨタ自動車株式会社 | 被検査物に存在する鉛を検出する方法 |
KR101097488B1 (ko) * | 2009-09-08 | 2011-12-22 | 삼성전기주식회사 | 핀 그리드 어레이 기판의 제조방법 |
DE102017212796A1 (de) * | 2017-07-26 | 2019-01-31 | Robert Bosch Gmbh | Elektrische Baugruppe |
CN108346952B (zh) * | 2018-01-25 | 2020-11-24 | 番禺得意精密电子工业有限公司 | 电连接器固持装置 |
JP7394880B2 (ja) * | 2019-09-12 | 2023-12-08 | 長江存儲科技有限責任公司 | 熱インジケータを備えた基板を含む電子部品 |
CN115362762A (zh) * | 2020-05-28 | 2022-11-18 | 松下知识产权经营株式会社 | 安装基板制造装置及安装基板制造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5330917A (en) * | 1989-02-02 | 1994-07-19 | Hybrivet Systems, Inc. | Test swab device and method of detecting lead, mercury, arsenic, and bismuth |
US5364792A (en) * | 1989-02-02 | 1994-11-15 | Hybrivet Systems, Inc. | Test swab and method of making and using same |
US5039618A (en) * | 1989-02-02 | 1991-08-13 | Hybrivet Systems, Inc. | Test swab cartridge type device and method for detecting lead and cadmium |
DE4034087A1 (de) * | 1989-10-27 | 1991-05-23 | Tsubakimoto Chain Co | Spannvorrichtung |
US5086966A (en) | 1990-11-05 | 1992-02-11 | Motorola Inc. | Palladium-coated solder ball |
US5120678A (en) * | 1990-11-05 | 1992-06-09 | Motorola Inc. | Electrical component package comprising polymer-reinforced solder bump interconnection |
US5088007A (en) * | 1991-04-04 | 1992-02-11 | Motorola, Inc. | Compliant solder interconnection |
US5229070A (en) * | 1992-07-02 | 1993-07-20 | Motorola, Inc. | Low temperature-wetting tin-base solder paste |
US5320272A (en) * | 1993-04-02 | 1994-06-14 | Motorola, Inc. | Tin-bismuth solder connection having improved high temperature properties, and process for forming same |
US5389160A (en) * | 1993-06-01 | 1995-02-14 | Motorola, Inc. | Tin bismuth solder paste, and method using paste to form connection having improved high temperature properties |
US5523920A (en) * | 1994-01-03 | 1996-06-04 | Motorola, Inc. | Printed circuit board comprising elevated bond pads |
US5519535A (en) * | 1994-04-04 | 1996-05-21 | Motorola, Inc. | Precision placement apparatus having liquid crystal shuttered dual prism probe |
US5708812A (en) * | 1996-01-18 | 1998-01-13 | Microsoft Corporation | Method and apparatus for Migrating from a source domain network controller to a target domain network controller |
CA2256747A1 (en) * | 1996-07-12 | 1998-01-22 | Minnesota Mining And Manufacturing Company | Method for the colorimetric quantification of ions |
US5832274A (en) * | 1996-10-09 | 1998-11-03 | Novell, Inc. | Method and system for migrating files from a first environment to a second environment |
JP3226213B2 (ja) * | 1996-10-17 | 2001-11-05 | 松下電器産業株式会社 | 半田材料及びそれを用いた電子部品 |
WO1998057167A1 (en) * | 1997-06-11 | 1998-12-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Department Of Health And Human Services | Handwipe disclosing method for the presence of lead |
JPH11272427A (ja) * | 1998-03-24 | 1999-10-08 | Hitachi Ltd | データ退避方法および外部記憶装置 |
GB9903552D0 (en) * | 1999-02-16 | 1999-04-07 | Multicore Solders Ltd | Reflow peak temperature reduction of solder alloys |
US6261868B1 (en) * | 1999-04-02 | 2001-07-17 | Motorola, Inc. | Semiconductor component and method for manufacturing the semiconductor component |
US6462413B1 (en) * | 1999-07-22 | 2002-10-08 | Polese Company, Inc. | LDMOS transistor heatsink package assembly and manufacturing method |
JP2001208742A (ja) * | 2000-01-26 | 2001-08-03 | Hitachi Ltd | 鉛検出用治具 |
US6640291B2 (en) * | 2001-08-10 | 2003-10-28 | Hitachi, Ltd. | Apparatus and method for online data migration with remote copy |
JP4168626B2 (ja) * | 2001-12-06 | 2008-10-22 | 株式会社日立製作所 | 記憶装置間のファイル移行方法 |
US7007046B2 (en) * | 2002-03-19 | 2006-02-28 | Network Appliance, Inc. | Format for transmission file system information between a source and a destination |
JP2004102374A (ja) * | 2002-09-05 | 2004-04-02 | Hitachi Ltd | データ移行装置を有する情報処理システム |
JP4411929B2 (ja) * | 2003-02-28 | 2010-02-10 | 株式会社日立製作所 | バックアップ方法、システム、及びプログラム |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103026804A (zh) * | 2010-08-02 | 2013-04-03 | 奥斯兰姆奥普托半导体有限责任公司 | 光电发光模块和汽车大灯 |
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US20050285274A1 (en) | 2005-12-29 |
TWI407514B (zh) | 2013-09-01 |
KR20070083395A (ko) | 2007-08-24 |
CN100501960C (zh) | 2009-06-17 |
JP2008504963A (ja) | 2008-02-21 |
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