CN1971961A - 对一主动侧壁相变存储单元改善热绝缘的结构及方法 - Google Patents

对一主动侧壁相变存储单元改善热绝缘的结构及方法 Download PDF

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CN1971961A
CN1971961A CNA2006101360264A CN200610136026A CN1971961A CN 1971961 A CN1971961 A CN 1971961A CN A2006101360264 A CNA2006101360264 A CN A2006101360264A CN 200610136026 A CN200610136026 A CN 200610136026A CN 1971961 A CN1971961 A CN 1971961A
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龙翔澜
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Macronix International Co Ltd
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    • H—ELECTRICITY
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    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
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    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa or cup type devices
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    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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    • H10N70/801—Constructional details of multistable switching devices
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    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Abstract

一种具有改善的热绝缘的存储元件。此元件包含电极堆叠，包括第一电极和第二电极元件，大致上是平坦的，通过侧壁子元件隔离且与之相互接触，其中该电极堆叠包括侧表面；相变元件，具有底表面与该电极堆叠侧表面接触，包括与该第一电极和该第二电极元件作电性接触；以及介电填充材料，环绕并覆盖该存储元件，其中该介电填充材料与该相变元件分离，导致该介电填充材料与该相变元件定义邻近于该相变元件的凹洞，且其中该凹洞容纳低气压环境。

Description

对一主动侧壁相变存储单元改善热绝缘的结构及方法
技术领域
本发明涉及非易失性存储器设备，特别涉及使用相变存储材料的存储元件及其制造方法。
背景技术
硫族化物(Chalcogenide)材料广泛用于读写光盘。这些材料具有至少二种固相，通常为非晶及结晶固相。激光脉冲用于读写光盘以在这些状态之间切换及在相变后读取材料的光学特性。
以相变材料为基础的存储材料，如硫族化物材料及其类似材料，也可以通过施加适于集成电路操作的电流而改变状态。通常的非晶态具有比通常的晶态高的电阻率，其可以被快速感应以指示数据。该特性有利于作为非易失性存储电路的可编程电阻材料，其可以用随机方式进行数据的读取与写入。
自非晶态改变为晶态的相变通常是较低电流的操作。而自晶态改变为非晶态的相变，在此称为重置，通常是较高电流的操作，会包含短的高电流脉冲以熔化或崩解此结晶结构，当此相变材料快速冷却后，为此相变过程焠火，造成至少一部分的相变结构可以稳定在此非晶态。通常希望此相变材料自晶态改变为非晶态的重置电流是越小越好。可以通过缩小单元内相变材料尺寸以及电极与此相变材料的接触面积的方式，来减小重置所需的重置电流值，所以高电流密度可以由较小电流通过此相变材料元件的方式来实现。
目前的一个发展方向朝向形成微小孔洞于集成电路结构内，和利用少量可编程电阻材料填充于此微小孔洞中。示出朝向微小孔洞发展的专利有：Ovshinsky于1997年11月11日发布的美国专利第5,687,112号、发明名称为“具尖形接触的多位单一单元存储元件(Multibit Single Cell Memory Element Having Tapered Contact)”的专利，Zahorik等人于1998年8月4日发布的美国专利第5,789,277号、发明名称为”制造硫族化物[sic]存储设备的方法(Method of MakingChalogenide[sic]Memory Device)”的专利，Doan等人于2000年11月21日发布的美国专利第6,150,253号，发明名称为”可控制双向相变半导体存储设备及其制造方法(Controllable Ovonic Phase-ChandeSemiconductor Memory Device and Methods of Fabricating the Same)”。以及Reinberg于1999年7月6日发布的美国专利第5,920,788号，发明名称为”有许多硫族化物电极的硫族化物存储单元(ChalcogenideMemory Cell with a Plurality of Chalcogenide Electrodes)”。
当使用传统的相变存储结构时，一个特殊的热传导问题会在此传统设计中发生。通常，这些现有技术教导使用金属电极于相变存储单元的两侧，且金属电极的大小相当于相变构件的大小。如此的电极会构成热导体，金属的高导热性会很快将热带离此相变材料。因为此相变的产生是由于热，此热传导效应会造成需要更高的电流，才能产生所预期的相变。
一种解决此热传导效应问题的方式可见于美国专利第6,815,704号，发明名称为”用于纳米等级硫族化物电子(NICE)随机存取存储器(RAM)的自动对准空气间隙热绝缘(Self Aligned Air-Gap ThermalInsulation for Nano-scale Insulated Chalcogenide Electronics(NICE)RAM)”，其中公开对此存储单元的绝缘。此结构及其制造过程是非常复杂的，然而仍无法达到此存储元件内的最小电流通过。
因此，必须要发展出提供有着小尺寸以及低重置电流的存储单元结构，此外此结构必须解决热传导问题，且其制造方法必须符合大规模存储元件所需的紧密工艺变型规范。还需要提供一结构及其制造方法，可以同时适用于同一芯片中外围电路的制造。
发明内容
本发明的目的为提供一种具有改善热绝缘的存储元件。此元件包含电极堆叠，包括第一电极和第二电极元件，大致上是平坦的，通过侧壁子元件隔离且与之相互接触，其中该电极堆叠包括侧表面；相变元件，具有底表面与该电极堆叠侧表面接触，包括与该第一电极和该第二电极元件作电性接触；以及介电填充材料，环绕并覆盖该存储元件，其中该介电填充材料与该相变元件分离，导致该介电填充材料与该相变元件定义邻近于该相变元件的凹洞，且其中该凹洞容纳低气压环境。
附图说明
图1示出根据现有技术的相变存储元件的剖面图；
图2A至图2D示出根据本发明实施例的相变存储元件的剖面图；
图3示出根据本发明一实施例的制造相变存储元件的起始步骤；
图4示出根据本发明一实施例的制造相变存储元件的进一步的步骤；
图5A及图5B示出根据本发明的替代实施例制造相变存储元件的进一步的步骤；
图6A及图6B示出根据本发明的替代实施例制造相变存储元件的进一步的步骤。
具体实施方式
以下通过图1至图6来详细说明本发明的结构与方法。本发明内容说明章节目的并非在于限制本发明。本发明由权利要求所限制。所有本发明的实施例、特征、观点及优点等将可透过下列说明权利要求及所附图示获得充分了解。
本发明的一般环境，就如现有技术一样，是如图1所示的存储元件10。如此处所示以及本技术领域内所公知的，存储单元是电路设备，其设计用来保存电荷或状态以指示单一位的给定逻辑电平。存储单元通常排列为阵列，如，计算机中的随机存取存储器。在某些存储单元内，存储元件执行实际存储电荷或状态的功能。在传统的随机存取存储单元中，如，电容器指示此单元的逻辑电平，其完全充电状态表示一逻辑1，或高状态，而其完全放电状态表示一逻辑0，或低状态。
如图中所示，此存储元件10包含两个电极12和14，由绝缘层16所分隔。相变材料薄膜18，将会于之后详细描述，桥接此二电极，其上有介电材料19。此电极的排列会决定此元件的几何形状，所以，举例而言，此相变材料形成此电极结构的侧壁。其它结构或许造成垂直的电极结构，本发明可适用于其它结构。可以进一步注意到图1仅是功能性的介绍，因此其它传统结构的细节被忽略。
流入第一电极12的操作电流，标示为Iin，跟着箭头进入此相变材料，流出方向标示为Iout，导致此元件中央的温度上升。当此温度超过相变所需时，此相变材料的一部分20发生相变。此相变材料的温度会决定何种效果产生，所以电流的选择必需要能达到所要产生的结果—不是非晶态就是晶态—在部分20。假如希望读取此元件状态，一低电流为了感测目的而使用。此读取操作是非破坏性的，因为其元件温度被保持低于一相变的临界温度。
图2A到图2D示出本发明的实施例。每一图均示出此相变存储元件10延着AA方向的剖面，以便简易明了。图中的相同元件为相变材料薄膜18，和介电材料19。
此外，这四个实施例皆有热绝缘元件22介于相变材料薄膜与介电材料之间。此绝缘元件的组成(及其描述的技术)在其下所描述每一实施例中均不同，但均是提供相变材料薄膜与介电材料之间的热绝缘之用。因此，热会被限制在相变材料之内，这有许多好处。第一，可防止热自相变材料扩散出去，此种设计会减少产生相变所需的热能，因此减少每一设置或重置操作所需的电流。同时，此相变材料元件内剩余的热可以减少传导至存储阵列内其它部分的热，即导致此元件的生命周期延长。对于完整集成电路内的存储元件数目而言-对于一1GB存储元件至少有八十亿个元件为例，所以应该可以明了这种热减少的效应是很重大的。
此相变材料18可以选自一组优选包含硫族化物(Chalcogenide)材料的族群之中。硫族化物材料包括具氧(O)、硫(S)、硒(Se)及碲(Te)四个化学周期表上VI族的一部份元素中的任何一个组成。硫族化物包括硫族化物族群与多个带正电元素或取代基的化合物。硫族化物合金包括硫族化物与其它如过渡金属材料的组合。硫族化物通常包含一种或一种以上选自元素周期表第六栏的其它元素，例如锗(Ge)及锡(Sn)。通常，硫族化物合金包括含有锑(Sb)，镓(Ga)，铟(In)及银(Ag)其中一种或多种的组合。许多以相变为主的存储材料已经被公开于技术文献中，包括Ga/Sb，In/Sb，In/Se，Sb/Te，Ge/Te，Ge/Sb/Te，In/Sb/Te，Ga/Se/Te，Sn/Sb/Te，In/Sb/Ge，Ag/In/Sb/Te，Ge/Sn/Sb/Te，Ge/Sb/Se/Te及Te/Ge/Sb/S的合金。在Ge/Sb/Te合金族群里，有许多的合金组成可以使用。组成的特征在于TeaGebSb100-(a+b)，其中a及b代表占构成元素总原子数的原子百分比。有一位研究人员指出最有用的合金为Te在已经沉积的材料内的平均浓度远低于70％，典型低于约60％且一般低到约23％而高到约58％Te，优选为约48％到58％Te。Ge的浓度超过约5％，平均材料内的Ge浓度从约8％到约30％，一般保持低于50％。优选地，Ge的浓度从约8％到约40％。组成内其余的主要构成元素为Sb。(Ovshinsky‘112专利第10-11栏)。特别被其它研究人员肯定的合金包括Ge2Sb2Te5，GeSb2Te4及GeSb4Te7(NobomYamada，“Ge-Sb-Te相变光盘在高数据速度记录上的可能性”SPIEv.3 109，pp.28-37(1997))。更一般而言，过渡金属，例如铬(Cr)，铁(Fe)，镍(Ni)，铌(Ni)，钯(Pd)，铂(Pt)及混合物或合金可与Ge/Sb/Te形成可编程绝缘特性的相变合金。有用的存储材料的特定实例请参考Ovshinky’112第11-13栏所述，该公开内容在此以参考方式并入本案。
相变合金能在此单元的主动信道区域内依其位置顺序于材料为一般非晶固相的第一结构状态与为一般结晶固相的第二结构状态之间切换。这些相变合金至少是双向稳定(bistable)的。在此所称非晶指相当没有秩序的结构，比单晶更无秩序，具有可被侦测的特征，例如比晶态更高的电绝缘性。在此所称的结晶性指相当有秩序的结构，比非晶结构更有秩序，具有可被侦测的特征，例如比非晶态更低的电绝缘性。典型而言，相变材料可以电性方式在不同可被侦测状态之间切换以跨越完全非晶及完全晶态之间的光谱。受到非晶及晶态之间变化影响的其它材料特征包括原子顺序，自由电子密度及活化能。材料可以转换至不同固相或转换至二个或更多的固相，以提供介于完全非晶及完全晶态之间的灰色地带。此材料的电特性也可以据此对应地改变。
相变材料可以通过施加电脉冲从一相状态变化成另一相状态。已经观察出一较短较高振幅脉冲容易使相变材料变成一般非晶态，一般称作为重设脉冲。较长较低振幅脉冲容易使相变材料变成一通常晶态，一般称作为编程脉冲。较短较长振幅脉冲内的能量够高到使结晶结构的键断裂，并且短到足以避免原子重新排成晶态。适当的脉冲分布可以依照经验法则判断，不需要过多的实验，而能找出适用于一特定的相变材料及元件结构的条件。下列说明里，相变材料称为GST，应了解其它类型相变材料也可以使用。用以实施在此所述的计算机存储器的材料为Ge2Sb2Te5。
其它可编程电阻存储材料也可以使用于本发明的其它实施例中，包括N型掺杂相变材料(GST)，GexSbb，或是其它可用不同结晶相变来决定电阻值的材料；PrxCayMnO3，PrSrMnO，ZrOx或其它可用电子脉冲来改变电阻状态的材料；掺杂有其它金属的TCQN，PCBM，TCNQ-PCBM，Cu-TCNQ，Ag-TCNQ，C60-TCNQ，TCNQ，或是其它任何有着可用电子脉冲来控制的双向稳定或多重稳定的电阻状态的高分子材料。
图2A中的元件通过邻近于此相变元件设置绝缘室来使用此热绝缘元件22。可以轻易了解，一良好的真空可以阻绝各种形式(除了热辐射)的热传导，大幅减少热自此相变材料流出。虽然要达到纯真空是十分困难的，本发明的结构提供真空室及其方法来达到低气压环境以限制反应气体。如之后的描述，此相变材料的厚度介于10纳米到50纳米之间，优选是30纳米(即自此元件长轴横切方向量测)。此真空室的厚度可介于10纳米到30纳米之间，优选是20纳米。以下结合此存储元件的制造过程的讨论，结构的细节将会更加清晰。
如图2B中替代实施例所示，绝缘室22被包括，但是密封层24被加入此相变元件之上。在低气压环境中，某些相变材料具有自此相变薄膜扩散到低气压环境中的倾向。此倾向可通过增加具有与相变材料的较佳附着力且具有良好扩散阻障作用的薄材料层而避免。优选是Al2O3，氧化硅，氮化硅，或是HFO2。此密封层24的厚度可介于5纳米到20纳米之间，优选是10纳米。
假如特定用途对于形成绝缘室有困难，则可以使用如图2C所示的结构，利用热阻障层23来取代绝缘室仍可以获得本发明的优点。此阻障层为额外的层，具有与绝缘室相同的厚度(介于10纳米到30纳米之间，优选是20纳米)。此材料的特性须要有较低的热传导系数，结合有较低的介电系数(通常称为low-k)。优选是使用一高分子材料或是其它本领域所公知的有机材质作为此用途。
此热绝缘材料的代表物质可包括具硅(Si)、碳(C)、氧(O)、氟(F)及氢(H)等的组合。做为热绝缘覆盖层的热绝缘材料例如包括氧化硅(SiO2)、SiCOH、聚酰胺及碳氟聚合物。若是氧化硅作为热绝缘覆盖层的热绝缘材料的话，则此热绝缘材料应该具有低于氧化硅的导热性，或是小于0.014J/cm*deg K*sec。许多低介电系数材料有着低于氧化硅的介电系数，也是合适的热绝缘物质。其它可作为热绝缘覆盖层的材料的实例包括氟氧化硅、倍半氧硅烷(silsesquioxane)、聚环烯醚(polyarylene ether)、聚对二甲苯(parylene)、氟聚合物、氟化无定型碳、类钻石碳、多孔性氧化硅、中孔性(mesoporous)氧化硅、多孔性倍半氧硅烷、多孔性聚亚酰胺及多孔性环烯醚。在其它具体实施例里，热绝缘结构包括位于介电填充部分内横跨桥段以提供热绝缘作用的填充栅极空隙。单层或多层可以作为提供热绝缘及电绝缘之用。
图2D中的实施例结合以上所述的例子，具有密封层24介于此相变元件与热阻障层23之间。先前关于两者功用上以及尺寸上的描述在此实施例中均可适用。
根据本发明实施例中如何制造相变存储元件的制作流程图，自图3开始显示。为了简明起见，图示中仅显示此相变元件及其相关特征，并没有显示图1中的电极及其相关结构。可以明了的是，电极结构与相变结构两者结合构成本发明实施例的一部份，本领域技术人员均能轻易明了如何将本发明所教示的特征运用于传统的制造过程与技术之中。
根据本发明实施例中如何制造相变存储元件的制作流程图，自基板102开始，优选是二氧化硅的形式或是其它介电填充材料，其具有良好绝缘和低介电系数等特性。在此基板之上形成相变材料104区块以及介电填充材料106。这些区块可以个别的形成，或是此介电材料已经存在。在后者的情况下，凹洞可以于此介电材料和相变材料内形成。为本领域所熟知的传统沉积技术，可以适用于此层。
此热绝缘元件优选是利用光阻及传统的光刻工艺所形成。此工艺显示于图4中，其中蚀刻掩膜108经过沉积、曝光然后除去此光阻物质所形成。
图5A显示此光刻工艺的结果。利用光阻所构成的掩膜，选择性蚀刻可以除去此相变材料至基板的高度，仅留下薄膜18与电极结构接触且形成凹洞140。优选是利用干式各向异性蚀刻，优选是一反应式离子蚀刻(RIE)技术。在蚀刻之后，除去剩余的光阻物质。
假如密封层24被使用，此层于蚀刻步骤之后沉积，如图5B所示。优选使用顺形沉积，此步骤必须被仔细控制以使沉积厚度小于凹洞140的一半宽度，所以凹洞可以延伸在相变材料的整个长度，以节省密封层在凹洞穴底部的厚度。
通过沉积覆盖层110以覆盖整个由图5A所定义的绝缘室22之上，图2A中所示的相变存储元件被完成于图6A。此层优选是二氧化硅或是其它介电填充材料。此处优选是使用非顺形沉积，以减少进入此绝缘室中的介电材料112。此覆盖层的厚度须大于此绝缘室的宽度，亦可减少进入此绝缘室中的材料。此步骤必须于低气压的环境下进行，如同本领域熟知的溅镀或是其它技术一般，因此可以确保绝缘室的内壁处于低气压的环境下。
具有阻障层24的结构，在此步骤也执行如图6A所示的步骤。
同样希望在图2B和图2C中用热绝缘材料来取代此绝缘室(分别是有或没有此扩散阻障层)的相变存储元件，其工艺仅与其上所述有少许的变化。唯一的不同是在6A/6B的沉积步骤之前增加扩散阻障层沉积的步骤。优选也能对此结构进行平坦化至此相变材料层的高度，使用某些本领域所熟知的化学机械研磨技术。
虽然本发明已参照优选实施例来加以描述，将了解的是，本发明并非受限于其详细描述的内容。替换及修改已于先前描述中所建议，并且其它替换及修改可被本领域技术人员所想到。特别是，根据本发明的结构与方法，所有具有实质上相同于本发明的构件组合、达成与本发明实质上相同结果的，皆不脱离本发明的精神和范围。因此，所有这些替换及修改均意欲落在本发明于所附权利要求及其等同物所界定的范围之中。

Claims (6)

1.一种存储元件，包括：
电极堆叠，其包含第一电极和第二电极元件，大致上是平坦的，通过绝缘元件隔离且与之相互接触，其中所述电极堆叠包括侧表面；
相变元件，具有底表面与所述电极堆叠的侧表面接触，包括与所述第一电极和所述第二电极元件电性接触；以及
介电填充材料，环绕并覆盖所述相变元件，其中所述介电填充材料与所述相变元件分离，导致所述介电填充材料与所述相变元件定义邻近于所述相变元件的凹洞，且其中所述凹洞容纳低气压环境。
2.如权利要求1所述的存储元件，其中所述凹洞容纳热绝缘材料，其具有比所述介电填充材料低的热传导系数。
3.如权利要求1所述的存储元件，其中所述相变元件包含锗(Ge)、锑(Sb)、碲(Te)的组合。
4.如权利要求1所述的存储元件，其中所述相变元件包括两种或两种以上选自由锗(Ge)、锑(Sb)、碲(Te)、硒(Se)、铟(In)、钛(Ti)、镓(Ga)、铋(Bi)、锡(Sn)、铜(Cu)、钯(Pd)、铅(Pb)、银(Ag)、硫(S)及金(Au)所组成的族群的材料组合。
5.如权利要求1所述的存储元件，还包括于所述相变元件之上的阻障层，以使所述相变元件与所述凹洞分离。
6.一种形成存储元件的方法，所述方法包括：
设置电极堆叠，包含第一电极和第二电极元件，大致上是平坦的，通过绝缘元件隔离且与之相互接触，其中所述电极堆叠包括侧表面；
形成相变材料层，与所述电极堆叠侧表面接触，且具有与所述电极堆叠大致相同的高度；以及
形成介电填充材料层，邻近于所述相变材料层，且具有与所述电极堆叠大致相同的高度；
切割间隙以分离所述相变材料层与所述介电填充材料层；
沉积介电层于所述相变材料层与所述介电填充材料层之上，其中所述沉积材料桥接并封闭所述间隙，且其中沉积步骤在低气压环境下进行。
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Families Citing this family (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6612695B2 (en) * 2001-11-07 2003-09-02 Michael Waters Lighted reading glasses
US7608503B2 (en) * 2004-11-22 2009-10-27 Macronix International Co., Ltd. Side wall active pin memory and manufacturing method
US7696503B2 (en) * 2005-06-17 2010-04-13 Macronix International Co., Ltd. Multi-level memory cell having phase change element and asymmetrical thermal boundary
US7394088B2 (en) * 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
US7635855B2 (en) * 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7786460B2 (en) 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7450411B2 (en) * 2005-11-15 2008-11-11 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7414258B2 (en) 2005-11-16 2008-08-19 Macronix International Co., Ltd. Spacer electrode small pin phase change memory RAM and manufacturing method
US7829876B2 (en) * 2005-11-21 2010-11-09 Macronix International Co., Ltd. Vacuum cell thermal isolation for a phase change memory device
US7816661B2 (en) * 2005-11-21 2010-10-19 Macronix International Co., Ltd. Air cell thermal isolation for a memory array formed of a programmable resistive material
US7479649B2 (en) * 2005-11-21 2009-01-20 Macronix International Co., Ltd. Vacuum jacketed electrode for phase change memory element
US7449710B2 (en) 2005-11-21 2008-11-11 Macronix International Co., Ltd. Vacuum jacket for phase change memory element
US7599217B2 (en) * 2005-11-22 2009-10-06 Macronix International Co., Ltd. Memory cell device and manufacturing method
US7459717B2 (en) 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7688619B2 (en) 2005-11-28 2010-03-30 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7521364B2 (en) * 2005-12-02 2009-04-21 Macronix Internation Co., Ltd. Surface topology improvement method for plug surface areas
US7531825B2 (en) * 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US8062833B2 (en) 2005-12-30 2011-11-22 Macronix International Co., Ltd. Chalcogenide layer etching method
US20070158632A1 (en) * 2006-01-09 2007-07-12 Macronix International Co., Ltd. Method for Fabricating a Pillar-Shaped Phase Change Memory Element
US7741636B2 (en) 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7560337B2 (en) * 2006-01-09 2009-07-14 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7432206B2 (en) * 2006-01-24 2008-10-07 Macronix International Co., Ltd. Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
US7956358B2 (en) 2006-02-07 2011-06-07 Macronix International Co., Ltd. I-shaped phase change memory cell with thermal isolation
US7554144B2 (en) 2006-04-17 2009-06-30 Macronix International Co., Ltd. Memory device and manufacturing method
US7928421B2 (en) * 2006-04-21 2011-04-19 Macronix International Co., Ltd. Phase change memory cell with vacuum spacer
US7423300B2 (en) * 2006-05-24 2008-09-09 Macronix International Co., Ltd. Single-mask phase change memory element
US7696506B2 (en) 2006-06-27 2010-04-13 Macronix International Co., Ltd. Memory cell with memory material insulation and manufacturing method
US7785920B2 (en) 2006-07-12 2010-08-31 Macronix International Co., Ltd. Method for making a pillar-type phase change memory element
US7772581B2 (en) * 2006-09-11 2010-08-10 Macronix International Co., Ltd. Memory device having wide area phase change element and small electrode contact area
US7504653B2 (en) 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US7863655B2 (en) 2006-10-24 2011-01-04 Macronix International Co., Ltd. Phase change memory cells with dual access devices
US7682868B2 (en) * 2006-12-06 2010-03-23 Macronix International Co., Ltd. Method for making a keyhole opening during the manufacture of a memory cell
US7476587B2 (en) 2006-12-06 2009-01-13 Macronix International Co., Ltd. Method for making a self-converged memory material element for memory cell
US20080137400A1 (en) * 2006-12-06 2008-06-12 Macronix International Co., Ltd. Phase Change Memory Cell with Thermal Barrier and Method for Fabricating the Same
US7903447B2 (en) 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
US8344347B2 (en) * 2006-12-15 2013-01-01 Macronix International Co., Ltd. Multi-layer electrode structure
US7718989B2 (en) 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device
US7440315B2 (en) * 2007-01-09 2008-10-21 Macronix International Co., Ltd. Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell
US7433226B2 (en) * 2007-01-09 2008-10-07 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell
US7663135B2 (en) 2007-01-31 2010-02-16 Macronix International Co., Ltd. Memory cell having a side electrode contact
US7619311B2 (en) 2007-02-02 2009-11-17 Macronix International Co., Ltd. Memory cell device with coplanar electrode surface and method
US7701759B2 (en) * 2007-02-05 2010-04-20 Macronix International Co., Ltd. Memory cell device and programming methods
US7463512B2 (en) * 2007-02-08 2008-12-09 Macronix International Co., Ltd. Memory element with reduced-current phase change element
US8138028B2 (en) * 2007-02-12 2012-03-20 Macronix International Co., Ltd Method for manufacturing a phase change memory device with pillar bottom electrode
US7884343B2 (en) 2007-02-14 2011-02-08 Macronix International Co., Ltd. Phase change memory cell with filled sidewall memory element and method for fabricating the same
US7956344B2 (en) 2007-02-27 2011-06-07 Macronix International Co., Ltd. Memory cell with memory element contacting ring-shaped upper end of bottom electrode
US7786461B2 (en) 2007-04-03 2010-08-31 Macronix International Co., Ltd. Memory structure with reduced-size memory element between memory material portions
US8610098B2 (en) * 2007-04-06 2013-12-17 Macronix International Co., Ltd. Phase change memory bridge cell with diode isolation device
US7755076B2 (en) * 2007-04-17 2010-07-13 Macronix International Co., Ltd. 4F2 self align side wall active phase change memory
US8373148B2 (en) * 2007-04-26 2013-02-12 Spansion Llc Memory device with improved performance
US8513637B2 (en) * 2007-07-13 2013-08-20 Macronix International Co., Ltd. 4F2 self align fin bottom electrodes FET drive phase change memory
TWI402980B (zh) 2007-07-20 2013-07-21 Macronix Int Co Ltd 具有緩衝層之電阻式記憶結構
US7884342B2 (en) * 2007-07-31 2011-02-08 Macronix International Co., Ltd. Phase change memory bridge cell
US7729161B2 (en) 2007-08-02 2010-06-01 Macronix International Co., Ltd. Phase change memory with dual word lines and source lines and method of operating same
US9018615B2 (en) * 2007-08-03 2015-04-28 Macronix International Co., Ltd. Resistor random access memory structure having a defined small area of electrical contact
US7642125B2 (en) * 2007-09-14 2010-01-05 Macronix International Co., Ltd. Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
US8178386B2 (en) * 2007-09-14 2012-05-15 Macronix International Co., Ltd. Phase change memory cell array with self-converged bottom electrode and method for manufacturing
US7551473B2 (en) * 2007-10-12 2009-06-23 Macronix International Co., Ltd. Programmable resistive memory with diode structure
US7919766B2 (en) 2007-10-22 2011-04-05 Macronix International Co., Ltd. Method for making self aligning pillar memory cell device
US7804083B2 (en) * 2007-11-14 2010-09-28 Macronix International Co., Ltd. Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
US7646631B2 (en) * 2007-12-07 2010-01-12 Macronix International Co., Ltd. Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
US7879643B2 (en) * 2008-01-18 2011-02-01 Macronix International Co., Ltd. Memory cell with memory element contacting an inverted T-shaped bottom electrode
US7879645B2 (en) * 2008-01-28 2011-02-01 Macronix International Co., Ltd. Fill-in etching free pore device
US8158965B2 (en) 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US8084842B2 (en) 2008-03-25 2011-12-27 Macronix International Co., Ltd. Thermally stabilized electrode structure
US8030634B2 (en) * 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US7825398B2 (en) 2008-04-07 2010-11-02 Macronix International Co., Ltd. Memory cell having improved mechanical stability
US7791057B2 (en) 2008-04-22 2010-09-07 Macronix International Co., Ltd. Memory cell having a buried phase change region and method for fabricating the same
US8077505B2 (en) * 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
US7701750B2 (en) 2008-05-08 2010-04-20 Macronix International Co., Ltd. Phase change device having two or more substantial amorphous regions in high resistance state
US8415651B2 (en) 2008-06-12 2013-04-09 Macronix International Co., Ltd. Phase change memory cell having top and bottom sidewall contacts
US8134857B2 (en) * 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US7932506B2 (en) 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US7903457B2 (en) 2008-08-19 2011-03-08 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US7719913B2 (en) 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
US8324605B2 (en) 2008-10-02 2012-12-04 Macronix International Co., Ltd. Dielectric mesh isolated phase change structure for phase change memory
US7897954B2 (en) 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
US8036014B2 (en) 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
US8907316B2 (en) 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
US8664689B2 (en) 2008-11-07 2014-03-04 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
US7869270B2 (en) 2008-12-29 2011-01-11 Macronix International Co., Ltd. Set algorithm for phase change memory cell
US8089137B2 (en) * 2009-01-07 2012-01-03 Macronix International Co., Ltd. Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
US8107283B2 (en) * 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8030635B2 (en) 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
US8084760B2 (en) 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
US8173987B2 (en) * 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8097871B2 (en) * 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US7933139B2 (en) * 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US7968876B2 (en) * 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
US8350316B2 (en) 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US8809829B2 (en) * 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US8238149B2 (en) 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US8363463B2 (en) 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8110822B2 (en) 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
US8198619B2 (en) 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US7894254B2 (en) 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US8064248B2 (en) 2009-09-17 2011-11-22 Macronix International Co., Ltd. 2T2R-1T1R mix mode phase change memory array
US8178387B2 (en) 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
TWI416661B (zh) * 2009-12-29 2013-11-21 Ind Tech Res Inst 空隙製造方法、電阻式記憶元件及其製造方法
US8729521B2 (en) 2010-05-12 2014-05-20 Macronix International Co., Ltd. Self aligned fin-type programmable memory cell
US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
US8987700B2 (en) 2011-12-02 2015-03-24 Macronix International Co., Ltd. Thermally confined electrode for programmable resistance memory
US8729522B2 (en) 2012-10-23 2014-05-20 Micron Technology, Inc. Memory constructions comprising thin films of phase change material
TWI549229B (zh) 2014-01-24 2016-09-11 旺宏電子股份有限公司 應用於系統單晶片之記憶體裝置內的多相變化材料
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9159412B1 (en) 2014-07-15 2015-10-13 Macronix International Co., Ltd. Staggered write and verify for phase change memory
US9324937B1 (en) 2015-03-24 2016-04-26 International Business Machines Corporation Thermally assisted MRAM including magnetic tunnel junction and vacuum cavity
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US10147876B1 (en) 2017-08-31 2018-12-04 Sandisk Technologies Llc Phase change memory electrode with multiple thermal interfaces
US11031543B2 (en) * 2018-10-23 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Via landing enhancement for memory device
US11690305B2 (en) * 2021-06-09 2023-06-27 International Business Machines Corporation Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3530441A (en) 1969-01-15 1970-09-22 Energy Conversion Devices Inc Method and apparatus for storing and retrieving information
IL61678A (en) 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
US4719594A (en) 1984-11-01 1988-01-12 Energy Conversion Devices, Inc. Grooved optical data storage device including a chalcogenide memory layer
US4876220A (en) 1986-05-16 1989-10-24 Actel Corporation Method of making programmable low impedance interconnect diode element
JP2685770B2 (ja) 1987-12-28 1997-12-03 株式会社東芝 不揮発性半導体記憶装置
US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5534712A (en) 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
US5177567A (en) 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5166096A (en) 1991-10-29 1992-11-24 International Business Machines Corporation Process for fabricating self-aligned contact studs for semiconductor structures
US5958358A (en) 1992-07-08 1999-09-28 Yeda Research And Development Co., Ltd. Oriented polycrystalline thin films of transition metal chalcogenides
US5514588A (en) * 1994-12-13 1996-05-07 Exxon Research And Engineering Company Surfactant-nutrients for bioremediation of hydrocarbon contaminated soils and water
US5785828A (en) 1994-12-13 1998-07-28 Ricoh Company, Ltd. Sputtering target for producing optical recording medium
US5517137A (en) 1995-05-19 1996-05-14 Alliance Semiconductor Corporation Synchronous self-timed clock pulse circuit having improved power-up performance
US5789758A (en) 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5879955A (en) 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6420725B1 (en) 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5831276A (en) 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US5869843A (en) 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US5837564A (en) 1995-11-01 1998-11-17 Micron Technology, Inc. Method for optimal crystallization to obtain high electrical performance from chalcogenides
US5687112A (en) 1996-04-19 1997-11-11 Energy Conversion Devices, Inc. Multibit single cell memory element having tapered contact
US6025220A (en) 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US5985698A (en) 1996-07-22 1999-11-16 Micron Technology, Inc. Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
US5814527A (en) 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US5789277A (en) 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5998244A (en) 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US6147395A (en) 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US6087674A (en) 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
US6015977A (en) 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US5952671A (en) 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6031287A (en) 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US7023009B2 (en) * 1997-10-01 2006-04-04 Ovonyx, Inc. Electrically programmable memory element with improved contacts
US6617192B1 (en) 1997-10-01 2003-09-09 Ovonyx, Inc. Electrically programmable memory element with multi-regioned contact
US6087269A (en) 1998-04-20 2000-07-11 Advanced Micro Devices, Inc. Method of making an interconnect using a tungsten hard mask
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6351406B1 (en) 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US7157314B2 (en) 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
US6177317B1 (en) 1999-04-14 2001-01-23 Macronix International Co., Ltd. Method of making nonvolatile memory devices having reduced resistance diffusion regions
US6077674A (en) 1999-10-27 2000-06-20 Agilent Technologies Inc. Method of producing oligonucleotide arrays with features of high purity
US6314014B1 (en) 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US6420216B1 (en) 2000-03-14 2002-07-16 International Business Machines Corporation Fuse processing using dielectric planarization pillars
US6888750B2 (en) 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US6420215B1 (en) 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6501111B1 (en) 2000-06-30 2002-12-31 Intel Corporation Three-dimensional (3D) programmable device
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6339544B1 (en) 2000-09-29 2002-01-15 Intel Corporation Method to enhance performance of thermal resistor device
US6429064B1 (en) 2000-09-29 2002-08-06 Intel Corporation Reduced contact area of sidewall conductor
US6555860B2 (en) 2000-09-29 2003-04-29 Intel Corporation Compositionally modified resistive electrode
US6567293B1 (en) 2000-09-29 2003-05-20 Ovonyx, Inc. Single level metal memory cell using chalcogenide cladding
US6569705B2 (en) 2000-12-21 2003-05-27 Intel Corporation Metal structure for a phase-change memory device
TW490675B (en) 2000-12-22 2002-06-11 Macronix Int Co Ltd Control method of multi-stated NROM
US6271090B1 (en) 2000-12-22 2001-08-07 Macronix International Co., Ltd. Method for manufacturing flash memory device with dual floating gates and two bits per cell
US6627530B2 (en) 2000-12-22 2003-09-30 Matrix Semiconductor, Inc. Patterning three dimensional structures
US6534781B2 (en) 2000-12-26 2003-03-18 Ovonyx, Inc. Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
US6487114B2 (en) 2001-02-28 2002-11-26 Macronix International Co., Ltd. Method of reading two-bit memories of NROM cell
US6730928B2 (en) * 2001-05-09 2004-05-04 Science Applications International Corporation Phase change switches and circuits coupling to electromagnetic waves containing phase change switches
US6514788B2 (en) 2001-05-29 2003-02-04 Bae Systems Information And Electronic Systems Integration Inc. Method for manufacturing contacts for a Chalcogenide memory device
US6589714B2 (en) 2001-06-26 2003-07-08 Ovonyx, Inc. Method for making programmable resistance memory element using silylated photoresist
US6613604B2 (en) 2001-08-02 2003-09-02 Ovonyx, Inc. Method for making small pore for use in programmable resistance memory element
US6605527B2 (en) 2001-06-30 2003-08-12 Intel Corporation Reduced area intersection between electrode and programming element
US6511867B2 (en) 2001-06-30 2003-01-28 Ovonyx, Inc. Utilizing atomic layer deposition for programmable device
US6673700B2 (en) 2001-06-30 2004-01-06 Ovonyx, Inc. Reduced area intersection between electrode and programming element
US6709958B2 (en) 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US6586761B2 (en) 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US6861267B2 (en) 2001-09-17 2005-03-01 Intel Corporation Reducing shunts in memories with phase-change material
US6566700B2 (en) 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
US6800563B2 (en) 2001-10-11 2004-10-05 Ovonyx, Inc. Forming tapered lower electrode phase-change memories
US6545903B1 (en) 2001-12-17 2003-04-08 Texas Instruments Incorporated Self-aligned resistive plugs for forming memory cell with phase change material
US6512241B1 (en) 2001-12-31 2003-01-28 Intel Corporation Phase change material memory device
US6867638B2 (en) 2002-01-10 2005-03-15 Silicon Storage Technology, Inc. High voltage generation and regulation system for digital multilevel nonvolatile memory
JP3796457B2 (ja) 2002-02-28 2006-07-12 富士通株式会社 不揮発性半導体記憶装置
US6579760B1 (en) 2002-03-28 2003-06-17 Macronix International Co., Ltd. Self-aligned, programmable phase change memory
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US6605821B1 (en) 2002-05-10 2003-08-12 Hewlett-Packard Development Company, L.P. Phase change material electronic memory structure and method for forming
US6864503B2 (en) 2002-08-09 2005-03-08 Macronix International Co., Ltd. Spacer chalcogenide memory method and device
US6850432B2 (en) 2002-08-20 2005-02-01 Macronix International Co., Ltd. Laser programmable electrically readable phase-change memory method and device
JP4928045B2 (ja) 2002-10-31 2012-05-09 大日本印刷株式会社 相変化型メモリ素子およびその製造方法
US6791102B2 (en) 2002-12-13 2004-09-14 Intel Corporation Phase change memory
US6744088B1 (en) 2002-12-13 2004-06-01 Intel Corporation Phase change memory device on a planar composite layer
US6815266B2 (en) * 2002-12-30 2004-11-09 Bae Systems Information And Electronic Systems Integration, Inc. Method for manufacturing sidewall contacts for a chalcogenide memory device
KR100486306B1 (ko) 2003-02-24 2005-04-29 삼성전자주식회사 셀프 히터 구조를 가지는 상변화 메모리 소자
US7067865B2 (en) * 2003-06-06 2006-06-27 Macronix International Co., Ltd. High density chalcogenide memory cells
US6815704B1 (en) 2003-09-04 2004-11-09 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids
JP4124743B2 (ja) * 2004-01-21 2008-07-23 株式会社ルネサステクノロジ 相変化メモリ
KR100564608B1 (ko) * 2004-01-29 2006-03-28 삼성전자주식회사 상변화 메모리 소자
US7220983B2 (en) * 2004-12-09 2007-05-22 Macronix International Co., Ltd. Self-aligned small contact phase-change memory method and device
US7214958B2 (en) * 2005-02-10 2007-05-08 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
US7166533B2 (en) * 2005-04-08 2007-01-23 Infineon Technologies, Ag Phase change memory cell defined by a pattern shrink material process

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