CN1297830C - Producing method for raster structure - Google Patents
Producing method for raster structure Download PDFInfo
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- CN1297830C CN1297830C CNB031412211A CN03141221A CN1297830C CN 1297830 C CN1297830 C CN 1297830C CN B031412211 A CNB031412211 A CN B031412211A CN 03141221 A CN03141221 A CN 03141221A CN 1297830 C CN1297830 C CN 1297830C
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- 238000000034 method Methods 0.000 title claims abstract description 89
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
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- 229910052737 gold Inorganic materials 0.000 claims description 23
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 21
- 229910052804 chromium Inorganic materials 0.000 claims description 19
- 239000011651 chromium Substances 0.000 claims description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
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- 229910052581 Si3N4 Inorganic materials 0.000 description 8
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
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Abstract
The present invention relates to a method for producing a grating structure. The method comprises the following steps: providing a base plate, and orderly forming a first insulation layer and a silicon oxide layer on the base plate; forming a plurality of grooves on the silicon oxide layer; forming a second insulation layer on the silicon oxide layer, wherein a plurality of grooves are filled with the second insulation layer, and a plurality of grating structural posts are formed in the grooves; forming a plurality of grating structural regions on the second insulation layer, and then orderly forming an adhering layer and a conductive layer on the grating structural regions, wherein each grating structural region comprises a plurality of grating structural posts; removing the second insulation layer outside the grating structural regions; removing the silicon oxide layer to present a plurality of grating structures in the grating structural regions.
Description
(1) technical field
The present invention is meant a kind of method for making of optical grating construction, refer to especially a kind of with monox as the grating sacrifice layer, make the optical grating construction post, and form the optical grating construction method for making of the adhesion layer and the metal level of grating face in low rate evaporation mode with the hard bake mode of the long photoresistance of low temperature.
(2) background technology
Traditional little actuating is glittered the formula grating in order to reach switching function, to have external form, and the purposes such as outward appearance of still possessing grating after activating of the formula grating that glitters, its structure mainly is made of the grating minute surface 4 of silicon substrate 1, structural column 2, torque arm 3 and suspension, shown in Fig. 1 (a).It is the top view of an optical grating construction.
See also Fig. 1 (b) and reach (c), it is the running synoptic diagram of this optical grating construction of Fig. 1 (a).When not applying voltage, reflection takes place and produces a reflected light 6 in incident light 5 on grating minute surface 4, shown in Fig. 1 (b).And when applying voltage, grating minute surface 4 is a fulcrum with structural column 2 promptly, reaches grating minute surface 4 inclinations one angle via reversing of torque arm 3, and this angle produces optics diffraction effect when taking place, make incident light 5 that diffraction take place on grating minute surface 4 and produce a diffraction light 7, shown in Fig. 1 (c).Wherein this corner is the blazing angle (blaze angle) of the formula grating that glitters.Can allow element have the high-level efficiency performance that the grating switching function also can be obtained the congenital physics of formula grating that glitters by this design.
The glitter manufacture process of formula grating of traditional little actuating can be subdivided into four parts, is realized by three light shield matching surface micro-processing technologies (Surface Micromachining).Above-mentioned four parts are respectively bottom electrode making, structural column making, grating body making and structure and discharge processing procedures such as (Release).
(a) bottom electrode is made
The making of bottom electrode, its processing procedure material are used silicon wafer of conventional semiconductors and silicon nitride, wherein with silicon wafer as lower electrode material, and select low resistance silicon wafer (resistance less than 1 Ω-cm) as bottom electrode to improve the conductive characteristic of electrode.
(b) structural column is made
Structural column is for connecting the structure of grating main body and silica-based base plate, and size is decided on the light shield design; And the decision of height is sacrificial layer thickness, is to decide on thin film deposition thickness.The height of structural column (being sacrificial layer thickness) influences the driving voltage of micro-actuator, also influences the windup-degree of grating minute surface, has also played the part of important role in the processing procedure that structure discharges, and too thin sacrifice layer will cause viscid being difficult to of structure to discharge.
The processing flow of structural column is for after bottom electrode completes, above whole silicon wafer with plasma auxiliary chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) mode is grown up aluminium or copper as sacrifice layer, coat photoresistance after finishing again and form the position of structural column with the second road light shield, the photoresistance that will form structural column after the development again carries out hard baking journey between high temperature, short time.After treating between high temperature, short time that hard baking journey is finished, as the etching block cover, utilize the mode of reactive ion etching, aluminium or copper layer are etched structural column desire the shape filled up in the future, again photoresistance is removed the formation of promptly finishing structural column with photoresistance.Afterwards, the mode with low-pressure chemical vapor deposition deposits the low stress nitride silicon layer again, and previous formed structural column zone is filled up up, promptly finishes the making of structural column.
(c) grating body making
Grating main body processing procedure is the structural column that utilizes the low stress nitride silicon formation of aforementioned low-pressure chemical vapor deposition, it is the shank of grating, implement the 3rd road light shield and form the shape and the zone of grating main body, after having developed possible remaining photoresistance is removed, the good wafer that will develop again steams chromium coating and gold layer, with behind the conductive layer as the sensitive layer of adhesion layer and grating and structure respectively, again after the zone formation shaping with grating main structure and top electrode, utilize reactive ion etching, with gold as block cover, etch structures to form the main structure of grating, is promptly finished the making of grating main body to silicon oxide layer.
(d) structure discharges
The microstructure of utilizing surperficial micro-processing technology to make, last one processing procedure major part all are structure to be discharged it can be suspended.The process that discharges promptly is that sacrifice layer is removed; Because hydrofluorite all has corrosivity to many metals, so processing procedure is formerly considered all must take in as the selection of metal level.It is that component structure with good chromium layer of evaporation and gold layer is immersed in the hydrofluorite liquid and removes to carry out drawing of sacrifice layer that structure discharges, and discharges processing procedure with the structure of finishing whole element.Its etching period increases with the thickness of sacrifice layer and reduces, and increases with the size of grating main body.
Yet the glitter manufacturing method thereof of formula grating of traditional little actuating has following 3 problems:
(1) the sacrifice layer performance is undesirable
In micro electronmechanical processing procedure, aluminium often is used as sacrifice layer usefulness, and its benefit is that low price is obtained easily, for acid or alkali it can both be etched, be as the pretty good selection of sacrifice layer.Therefore also, in the time of may even developing, all can be developed liquid and corrode a little, thereby cause destruction on the reduced size because aluminium all reacts soda acid; Yet the semiconductor manufacturing is to the utmost to the use of aluminium to be ripe, the composition of developer solution has been deployed into the prescription of not etching aluminium, therefore the problem of developer solution is not the main key on this processing procedure, and key is that the etching solution that is aluminium can produce gas in the process of etching aluminium, and this gas is hydrogen.Gas can cause etched iris action, for the flat sacrifice layer inside of broad, can cause can't etching situation completely, the problem as the grating agent structure promptly faces.Another problem then is the generation of hydrogen, has the strength that one is up pushed structure open, will damage the grating main body, and is therefore unsatisfactory as the sacrifice layer of this processing procedure with aluminium.
In order to solve the air bubble problem that aluminium is produced when the etching, other has with the practice of copper as sacrifice layer.In the manufacturing of circuit board, iron chloride often is used as the etching solution of copper, but, previous grating main structure design is to be material with nickel, and iron chloride meeting etching nickel, therefore, replace iron chloride, the etch-rate that can obtain being exceedingly fast with prescription for the etching solution that every liters of water solution contains the sal-ammoniac of 80 g cupric chloride and 80 g.With copper as the benefit of sacrifice layer for not producing bubble, but its etch-rate but is difficult to control; In the processing procedure of making structural column, the etching area length respectively is that the etching period of aluminium was about about 15 minutes under the situation of 2 μ m, and the etching period of copper is about 15 ~ 20 seconds.In the so short time, we must consider the etched uniformity coefficient of copper, and actual etching result is unsatisfactory.When the pitting of structural column carve finish after, the large area region of top electrode is incomplete with etching, if the large area region etching is clean, then can cause the hole of structural column excessive, and then the length of main structure body arround feeding through to and torsion rod member.Therefore, also be less-than-ideal with copper as the sacrifice layer of this processing procedure.
(2) hard baking journey can make the photoresistance distortion between high temperature, short time
The processing procedure of structural column is formed by second light shield to process, and its process results can influence the outward appearance of structural column, also can influence the flatness of torsion rod member.The fabrication steps of structural column is utilized the mode machine-shaping of reactive ion etching for being block cover with the photoresistance with silicon oxide layer; Before carrying out etching, must earlier photoresistance just can be obtained solid block cover after roasting firmly between high temperature, short time, but, under the development of tiny area, the photoresistance distortion that high temperature caused can not be ignored, because photoresistance is when meeting high temperature, the solvent of inside can be evaporated fast, and cause the distortion of photoresistance inside, the local even more serious of water caltrop figure especially arranged, it is very slick and sly that high temperature can become the photoresistance corner, thereby form unexpected outward appearance.
(3) chromium layer and the evaporation of gold layer are bad makes hydrofluorite to corrode chromium and gold is started from structure
Handle (Multi-User MEMS Processes the multi-user, MUMPs) time that has detailed record silicon wafer to soak in hydrofluorite in the processing procedure is 1.5 ~ 2 minutes, formula grating main body belongs to the structure of wide length and little actuating is glittered, there is no the design of etch-hole for the integrality of possessing the grating minute surface, therefore, the oxide layer etching period needs 8 fens halfs at least.In carrying out etching process, gold promptly partly was suspended on the liquid level in 3 ~ 5 minutes, and this is meaning chromium and is being attacked by hydrofluorite.
(3) summary of the invention
Fundamental purpose of the present invention for propose a kind of with monox as the grating sacrifice layer, make the optical grating construction post, and form the optical grating construction method for making of the adhesion layer and the metal level of grating face in low rate evaporation mode with for a long time hard bake mode of low temperature, but not only the stationary raster structure, prevent the photoresistance distortion, also can avoid etchant that metal level is started simultaneously.
According to conception of the present invention, a kind of method for making of optical grating construction is proposed, be characterized in, comprise the following step: a substrate (a) is provided, and forms one first insulation course and one silica layer thereon in regular turn; (b) coating one photoresistance and in addition roasting firmly to this photoresistance on this silicon oxide layer is to form a plurality of optical grating construction columnar regions; Its firmly roasting condition is 70～90 degree Celsius, 2～5 hours; (c) this silicon oxide layer in these a plurality of optical grating construction columnar regions of etching and this first insulation course are till this substrate, to form a plurality of grooves respectively; (d) form one second insulation course on this silicon oxide layer, wherein this second insulation course fills up this a plurality of grooves, and forms a plurality of optical grating construction posts in these a plurality of grooves; (e) on this second insulation course, form a plurality of optical grating constructions zone, evaporation one adhesion layer is on this a plurality of optical grating constructions zone, and evaporation one conductive layer is on this this adhesion layer, its evaporation condition is for to carry out with 0.1～0.2 /sec deposit metal films speed, and wherein this a plurality of optical grating constructions zone comprises this a plurality of optical grating construction posts respectively; (f) will be positioned at extra-regional second insulation course of these a plurality of optical grating constructions removes; And, make that a plurality of optical grating constructions in this a plurality of optical grating constructions zone present (g) with this silicon oxide layer removal.
According to above-mentioned conception, wherein this substrate can be an insulated substrate.
According to above-mentioned conception, wherein this insulated substrate can be a silicon substrate.
According to above-mentioned conception, wherein this first insulation course is formed by silicon nitride.
According to above-mentioned conception, wherein this first insulation course is formed with Low Pressure Chemical Vapor Deposition (LPCVD).
According to above-mentioned conception, wherein this first thickness of insulating layer is 2500～3000 .
According to above-mentioned conception, wherein this electrode is finished with reactive ion etching method (RIE).
According to above-mentioned conception, wherein this silicon oxide layer is formed with plasma auxiliary chemical vapor deposition method (PECVD).
According to above-mentioned conception, wherein this silicon oxide layer thickness is about 1.5～2um.
According to above-mentioned conception, wherein the hard roasting condition of step (b) is 70～90 degree Celsius, 2～5 hours.
According to above-mentioned conception, wherein step (c) is this silicon oxide layer and this first insulation course that utilizes in these a plurality of optical grating construction columnar regions of reactive ion etching method (RIE) etching.
According to above-mentioned conception, wherein this second insulation course is formed by low stress nitride silicon.
According to above-mentioned conception, wherein this second insulation course is formed with Low Pressure Chemical Vapor Deposition (LPCVD).
According to above-mentioned conception, wherein step (e) also comprises the following step: (e1) evaporation one adhesion layer is on this a plurality of optical grating constructions zone; And (e2) evaporation one conductive layer on this adhesion layer.
According to above-mentioned conception, wherein the evaporation condition of step (e1) is 0.1～0.2 /sec.
According to above-mentioned conception, wherein this adhesion layer can be a chromium or titanium or titanium-tungsten layer.
According to above-mentioned conception, wherein this chromium or titanium or titanium-tungsten layer thickness are 150～200 .
According to above-mentioned conception, wherein the evaporation condition of step (e1) is 0.1～0.2 /sec.
According to above-mentioned conception, wherein this conduction and reflector layer can be a gold medal layer.
According to above-mentioned conception, should the gold layer thickness be 1500～2000 wherein.
According to above-mentioned conception, wherein step (f) is will be positioned at extra-regional second insulation course of these a plurality of optical grating constructions with reactive ion etching method (RIE) to remove.
According to above-mentioned conception, wherein step (g) is with wet etching this silicon oxide layer to be removed.
According to above-mentioned conception, wherein the etchant solutions of wet etching is hydrofluorite (HF).
According to another conception of the present invention, a kind of method for making of optical grating construction is proposed, comprise the following step: a substrate (a) is provided, and forms one first insulation course and one silica layer thereon in regular turn; (b) on this silicon oxide layer, form a plurality of optical grating construction columnar regions; (c) form a plurality of grooves respectively in these a plurality of optical grating construction columnar regions; (d) form one second insulation course on this silicon oxide layer, wherein this second insulation course is to fill up this a plurality of grooves, and forms a plurality of optical grating construction posts in these a plurality of grooves; (e) form a plurality of optical grating constructions zone on this second insulation course, successively form an adhesion layer and a conductive layer again on this a plurality of optical grating constructions zone, wherein this a plurality of optical grating constructions zone is to comprise this a plurality of optical grating construction posts respectively; (f) will be positioned at extra-regional second insulation course of these a plurality of optical grating constructions removes; And, make that a plurality of optical grating constructions in this a plurality of optical grating constructions zone present (g) with this silicon oxide layer removal.
According to above-mentioned conception, wherein this substrate can be an insulated substrate.
According to above-mentioned conception, wherein this insulated substrate can be a silicon substrate.
According to above-mentioned conception, wherein this first insulation course is formed by silicon nitride.
According to above-mentioned conception, wherein this first insulation course is formed with Low Pressure Chemical Vapor Deposition (LPCVD).
According to above-mentioned conception, wherein this first thickness of insulating layer is 2500～3000 .
According to above-mentioned conception, wherein this electrode is finished with reactive ion etching method (RIE).
According to above-mentioned conception, wherein this silicon oxide layer is formed with plasma auxiliary chemical vapor deposition method (PECVD).
According to above-mentioned conception, wherein this silicon oxide layer thickness is about 1.5～2um.
According to above-mentioned conception, wherein step (b) also comprises a step: coating one photoresistance and in addition roasting firmly on this silicon oxide layer to this photoresistance, and to form the zone of these a plurality of grooves.
According to above-mentioned conception, wherein roasting firmly condition is 70～90 degree Celsius, 2～5 hours.
According to above-mentioned conception, wherein step (c) also comprises a step: this silicon oxide layer in these a plurality of optical grating construction columnar regions of etching and this first insulation course are till this substrate, to form these a plurality of grooves.
According to above-mentioned conception is to utilize reactive ion etching method (RIE) this silicon oxide layer of etching and this first insulation course.
According to above-mentioned conception, wherein this second insulation course is formed by low stress nitride silicon.
According to above-mentioned conception, wherein this second insulation course is formed with Low Pressure Chemical Vapor Deposition (LPCVD).
According to above-mentioned conception, wherein step (e) also comprises the following step: (e1) evaporation one adhesion layer is on this a plurality of optical grating constructions zone; And (e2) evaporation one conductive layer on this adhesion layer.
According to above-mentioned conception, wherein the evaporation condition of step (e1) is 0.1～0.2 /sec.
According to above-mentioned conception, wherein this adhesion layer can be a chromium or titanium or titanium-tungsten layer.
According to above-mentioned conception, wherein this chromium or titanium or titanium-tungsten layer thickness are 150～200 .
According to above-mentioned conception, wherein the evaporation condition of step (e2) is 0.1～0.2 /sec.
According to above-mentioned conception, wherein this conduction and reflector layer can be a gold medal layer.
According to above-mentioned conception, should the gold layer thickness be 1500～2000 wherein.
According to above-mentioned conception, wherein step (f) is will be positioned at extra-regional second insulation course of these a plurality of optical grating constructions with reactive ion etching method (RIE) to remove.
According to above-mentioned conception, wherein step (g) is with wet etching this silicon oxide layer to be removed.
According to above-mentioned conception, wherein the etchant solutions of wet etching is hydrofluorite (HF).
According to a conception more of the present invention, a kind of method for making of optical grating construction is proposed, comprise the following step: a substrate (a) is provided, and forms one first insulation course and one silica layer thereon in regular turn; (b) on this silicon oxide layer, form a plurality of grooves; (c) form one second insulation course on this silicon oxide layer, wherein this second insulation course is to fill up this a plurality of grooves, and forms a plurality of optical grating construction posts in these a plurality of grooves; (d) form a plurality of optical grating constructions zone on this second insulation course, successively form an adhesion layer and a conductive layer again on this a plurality of optical grating constructions zone, wherein this a plurality of optical grating constructions zone is to comprise this a plurality of optical grating construction posts respectively; (e) will be positioned at extra-regional second insulation course of these a plurality of optical grating constructions removes; And, make that a plurality of optical grating constructions in this a plurality of optical grating constructions zone present (f) with this silicon oxide layer removal.
According to above-mentioned conception, wherein this substrate can be an insulated substrate.
According to above-mentioned conception, wherein this insulated substrate can be a silicon substrate.
According to above-mentioned conception, wherein this first insulation course is formed by silicon nitride.
According to above-mentioned conception, wherein this first insulation course is formed with Low Pressure Chemical Vapor Deposition (LPCVD).
According to above-mentioned conception, wherein this first thickness of insulating layer is 2500～3000 .
According to above-mentioned conception, wherein this electrode is finished with reactive ion etching method (RIE).
According to above-mentioned conception, wherein this silicon oxide layer is formed with plasma auxiliary chemical vapor deposition method (PECVD).
According to above-mentioned conception, wherein this silicon oxide layer thickness is about 1.5～2um.
According to above-mentioned conception, wherein step (b) comprises the following step: the zone that (b1) forms these a plurality of grooves on this silicon oxide layer; And (b2) on this silicon oxide layer, form these a plurality of grooves.
According to above-mentioned conception, wherein step (b1) also comprises a step: be coated with a photoresistance on this silicon oxide layer and roasting firmly in addition to this photoresistance, to form the zone of these a plurality of grooves.
According to above-mentioned conception, wherein roasting firmly condition is 70～90 degree Celsius, 2～5 hours.
According to above-mentioned conception, wherein step (b2) also comprises a step: this silicon oxide layer of etching and this first insulation course are till this substrate, to form these a plurality of grooves.
According to above-mentioned conception is to utilize reactive ion etching method (RIE) this silicon oxide layer of etching and this first insulation course.
According to above-mentioned conception, wherein this second insulation course is formed by low stress nitride silicon.
According to above-mentioned conception, wherein this second insulation course is formed with Low Pressure Chemical Vapor Deposition (LPCVD).
According to above-mentioned conception, wherein step (d) also comprises the following step: (d1) evaporation one adhesion layer is on this a plurality of optical grating constructions zone; And (d2) evaporation one conductive layer on this adhesion layer.
According to above-mentioned conception, wherein the evaporation condition of step (d1) is 0.1～0.2 /sec.
According to above-mentioned conception, wherein this adhesion layer is a chromium or titanium or titanium-tungsten layer.
According to above-mentioned conception, wherein this chromium or titanium or titanium-tungsten layer thickness are 150～200 .
According to above-mentioned conception, wherein the evaporation condition of step (d2) is 0.1～0.2 /sec.
According to above-mentioned conception, wherein this conduction and reflector layer can be a gold medal layer.
According to above-mentioned conception, should the gold layer thickness be 1500～2000 wherein.
According to above-mentioned conception, wherein step (e) is will be positioned at extra-regional second insulation course of these a plurality of optical grating constructions with reactive ion etching method (RIE) to remove.
According to above-mentioned conception, wherein step (f) is with wet etching this silicon oxide layer to be removed.
According to above-mentioned conception, wherein the etchant solutions of wet etching is hydrofluorite (HF).
(4) description of drawings
The present invention can obtain a more deep understanding by the explanation of following drawings and Examples:
Fig. 1 (a) is the vertical view of optical grating construction;
Fig. 1 (b) ~ (c) is the running synoptic diagram of optical grating construction;
Fig. 2 (a) ~ (c) is that the bottom electrode of the preferred embodiment of method for making of the present invention is made process flow diagram;
Fig. 3 (a) ~ (d) is that the structural column of the preferred embodiment of method for making of the present invention is made process flow diagram;
Fig. 4 (a) ~ (d) is the grating body making process flow diagram of the preferred embodiment of method for making of the present invention;
Fig. 5 (a) is the low-light grid structure side view that the preferred embodiment of method for making of the present invention is made; And
Fig. 5 (b) is the single grating side view that the preferred embodiment of method for making of the present invention is made.
(5) embodiment
See also Fig. 2 (a) ~ (c), its bottom electrode for the preferred embodiment of method for making of the present invention is made process flow diagram.At first, get the Silicon-On-Insulator substrate 21 of a low resistance, afterwards above it with low-pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD) the grow up silicon nitride 22 of about 3000 of thickness of mode is with as landing the insulation course of (landing) future after the energising of grating main body.The silicon substrate 21 of silicon nitride 22 of will having grown up is afterwards coated photoresistance and is formed bottom electrode with first light shield, with reactive ion etching (Reactive Ion Etching RIE) bottom electrode 23 is made again.
See also Fig. 3 (a) ~ (d), its structural column for the preferred embodiment of method for making of the present invention is made process flow diagram.After bottom electrode 23 completes, just be shown in whole silicon wafer top with plasma auxiliary chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition as Fig. 3 (a), PECVD) mode about 1.5 ~ 2 μ m of one silica layer 31 thickness that grow up, coat photoresistance 32 after finishing again and form the position of structural column, shown in Fig. 3 (b) with the second road light shield.The photoresistance 32 that will form structural column after the development again carries out roasting firmly in the mode of lower temperature for a long time.Roasting firmly in mode of low temperature at this is to meet high temperature and be out of shape for fear of photoresistance 32, the distortion of photoresistance 32 will influence the shape of structural column, so temperature is set in below 90 ℃ or even about 70 ~ 80 ℃ have good effect, and the roasting firmly time is about 2 ~ 5 hours and all can.
After treating that photoresistance 32 hard roasting processes are finished, with photoresistance 32 as the etching block cover, utilize the mode of reactive ion etching, silicon oxide layer 31 is etched a plurality of grooves 33, wherein these a plurality of grooves 33 are structural column and desire the shape filled up in the future, again photoresistance 32 is removed the formation of promptly finishing structural column, shown in Fig. 3 (c).Wherein, the processing procedure of reactive ion etching silicon oxide layer 31 and silicon nitride layer 22 must be punched to silicon substrate 21, when avoiding in the future sacrifice layer being removed, the situation generation that structural column is also drawn.After finishing the formation of structural column, the mode with low-pressure chemical vapor deposition deposits low stress nitride silicon 34 thickness 1.75 μ m again, and previous formed structural column district Oak is filled up up, shown in Fig. 3 (d), promptly finishes the making of structural column 35.
Main material as for the grating main body is the low stress nitride silicon of low-pressure chemical vapor deposition, select its main material reason to have two as the grating main body, the first is in order to reduce the internal stress that structure itself exists, internal stress then can cause the warpage of grating agent structure too greatly, and the structure warpage is with the glitter optical characteristics of formula grating of influence; Another then is non-conductive, because structural column 35 is to be connected with the grating main body, and structural column 35 is connected with the silicon substrate 21 that low resistance promptly has conductive characteristic, in order to prevent the short circuit of upper/lower electrode, so select the agent structure material of dielectric low stress nitride silicon as grating.Its processing procedure partly can be by Fig. 4 (a) ~ (d) expression, and it is the grating body making process flow diagram of the preferred embodiment of method for making of the present invention.Earlier shown in Fig. 4 (a), utilize the 3rd road light shield to form the shape and the zone of grating main body, after having developed hard a little the baking of photoresistance 41 got final product, as aforementioned, for the chance thermal deformation that prevents photoresistance 41 and in the future the lift-off processing procedure smoothly, the parameter of this firmly roasting program is 90 ℃ of temperature, in 10 minutes.In addition, can develop fully when developing totally increasing the adhesion of depositing metal layers in the future in order to ensure photoresistance 41, the photoresistance 41 after we will develop passes to mode about 15 seconds of pure oxygen with possible remaining photoresistance removal with the mode utilization of reactive ion etching.After finishing this step, the good wafer that will develop again carries out evaporation, and the part of wherein having developed can obtain and good being connected of metal, and still undeveloped photoresistance partly can be used as the block cover of evaporation metal.
In the deposition of metal level, shown in Fig. 4 (b), steam chromium coating 42 thickness earlier and be about 150 as adhesion layer, again behind the conductive layer of evaporation one gold medal layer 43 thickness 1500A as the sensitive layer of grating and structure, utilize the processing procedure of take off (lift-off) for another example shown in Fig. 4 (c), with the zone formation shaping of grating main structure and top electrode (promptly the gold layer 43).After Lift-off finishes, utilize reactive ion etching, as block cover, etch structures is to silicon oxide layer 31, to form the main structure of grating, shown in Fig. 4 (d) with gold layer 43.
At last, the microstructure of utilizing surperficial micro-processing technology to make, last one processing procedure major part all are structure to be discharged (release) it can be suspended.The process that discharges promptly is that sacrifice layer is removed; Therefore in the present invention, the sacrifice layer of little actuating grating is a monox, and the method that silicon oxide layer is removed can be divided into two kinds of dry type and wet types.Dry type is carried out etching for utilizing hydrofluoric acid gas or plasma, and wet type is to utilize hydrofluoric acid solution to carry out, and Wet-type etching method described later is that less expensive reaches the method that generally is used.
Before carrying out structure release processing procedure, we can be earlier with reference to employed structure delivery mode in MUMPs (Multi-User MEMSProcesses) processing procedure.Because hydrofluorite all has corrosivity to many metals, so processing procedure is formerly considered all must take in as the selection of metal level.In the MUMPs processing procedure, last one processing procedure before structure discharges is for getting on chromium and gold with lift-off mode evaporation, wherein chromium is used as adhesion layer, gold is used as the favorable conductive layer, after finishing element is immersed in the release work of carrying out structure in the hydrofluorite liquid in 1.5 to 2 minutes, then be soaked in again in the deionized water several minutes, and be immersed in again at last in the alcohol, in the mode of high temperature with liquid evaporation.From the processing procedure of MUMPs, we can obtain a conclusion and are exactly, and the collocation of chromium and gold is one well to be selected, and therefore, in the processing procedure of formula grating was glittered in little actuating of the present invention, the metal of institute's evaporation was chromium and gold on the grating main body.Gold also is used as top electrode conduction usefulness except keeping out the corrosion of hydrofluorite as adhesion layer among the present invention, in addition, and still as the important materials of the sensitive surface of grating.
Fig. 5 (a) is (structure discharges the back) optical grating construction side view made from the preferred embodiment of method for making of the present invention.And the way of processing procedure mode and above-mentioned MUMPs processing procedure is similar, the structure that also is the Fig. 4 (d) that will process is inserted in the hydrofluoric acid solution of concentration 49%, oxide layer 31 drawn remove, its etching period increases with the thickness of oxide layer 31 and reduces, and increases with the size of grating main body.For the present invention, the grating main body is of a size of wide 25 μ m, long 100 μ m, oxidated layer thickness 1.5 μ m, its etching period is about about 8 fens halfs, after utilizing the hydrofluoric acid solution etching intact, insert again in the deionized water more than at least 30 minutes, allow water that the hydrofluorite of grating main body below is diluted, be immersed in again afterwards and have a few hours in high-volatile alcohol or isopropyl alcohol or the methyl alcohol, allow alcohols combine, insert the structure release processing procedure of promptly finishing whole element in 120 ° of C baking boxs in one day in taking out the back full wafer more at last, and obtain structure as Fig. 5 (a) with water.
See also Fig. 5 (b), it is the single grating side view made from the preferred embodiment of method for making of the present invention, by finding out among the figure that grating main body, chromium layer 42 and gold layer 43 that single grating constitutes by structural column 35, with silicon nitride 34 are formed.
By above-mentioned embodiment as can be known, the method for making of optical grating construction proposed by the invention, be to substitute traditional copper and aluminium as sacrifice layer with monox, and make structural column with the hard bake mode of photoresistance of low temperature (Celsius 70～90 degree), long-time (2～5 hours) with respect to known processing procedure, no matter make the optical grating construction made exceed a lot of performance of conventional process (with near the high temperature of 120 degree Celsius roasting about 0.5 hour firmly) all having in function or the practical application; And discharge in the processing procedure in structure, more propose one and can increase adhesion layer opposing by the deposit metal films speed of the etching period of hydrofluorite (0.1～0.2 /sec), make that adhesion layer can keep not raised destruction in nearly 20 minutes in hydrofluoric acid solution, situation with respect to conductive layer in the conventional process promptly started because of the erosion of hydrofluorite at 5～8 minutes has breakthrough improvement in fact.
Claims (3)
1. the method for making of an optical grating construction is characterized in that, comprises the following step:
(a) provide a substrate, and form one first insulation course and one silica layer thereon in regular turn;
(b) coating one photoresistance and in addition roasting firmly to this photoresistance on this silicon oxide layer is to form a plurality of optical grating construction columnar regions; Its firmly roasting condition is 70～90 degree Celsius, 2～5 hours;
(c) this silicon oxide layer in these a plurality of optical grating construction columnar regions of etching and this first insulation course are till this substrate, to form a plurality of grooves respectively;
(d) form one second insulation course on this silicon oxide layer, wherein this second insulation course fills up this a plurality of grooves, and forms a plurality of optical grating construction posts in these a plurality of grooves;
(e) on this second insulation course, form a plurality of optical grating constructions zone, evaporation one adhesion layer is on this a plurality of optical grating constructions zone, its evaporation condition is for to carry out with 0.1～0.2 /sec deposit metal films speed, reach evaporation one conductive layer on this adhesion layer, wherein this a plurality of optical grating constructions zone comprises this a plurality of optical grating construction posts respectively;
(f) will be positioned at extra-regional second insulation course of these a plurality of optical grating constructions removes; And
(g) this silicon oxide layer is removed, made that a plurality of optical grating constructions in this a plurality of optical grating constructions zone present.
2. method for making as claimed in claim 1 is characterized in that:
This substrate is an insulated substrate, and this insulated substrate is a silicon substrate;
This first insulation course is formed by low stress nitride silicon;
This first insulation course is to form with Low Pressure Chemical Vapor Deposition;
This first thickness of insulating layer is 2500～3000 ;
Form electrode with the reactive ion etching method;
This silicon oxide layer is to form with the plasma auxiliary chemical vapor deposition method;
This silicon oxide layer thickness is 1.5～2 μ m;
Step (c) is this silicon oxide layer and this first insulation course that utilizes in these a plurality of optical grating construction columnar regions of reactive ion etching method etching;
This second insulation course is formed by low stress nitride silicon; And/or
This second insulation course is to form with Low Pressure Chemical Vapor Deposition.
3. method for making as claimed in claim 1 is characterized in that:
This adhesion layer is a chromium or titanium or titanium-tungsten layer;
This chromium layer thickness is 150～200 ;
This conductive layer is a gold medal layer, and should the gold layer thickness be 1500～2000 ;
Step (f) is will be positioned at extra-regional second insulation course of these a plurality of optical grating constructions with the reactive ion etching method to remove; And/or
Step (g) is with wet etching this silicon oxide layer to be removed, and the etchant solutions of this wet etching is a hydrofluorite.
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| CN100446274C (en) * | 2005-07-07 | 2008-12-24 | 友达光电股份有限公司 | Switching element of pixel electrode, and manufacturing method |
| CN102963859B (en) * | 2012-11-12 | 2015-07-29 | 北京大学 | The test structure of sacrifice layer corrosion time and MEMS preparation method |
| CN106547146A (en) | 2017-01-22 | 2017-03-29 | 京东方科技集团股份有限公司 | Dot structure and its manufacture method, array base palte and display device |
| CN107170766B (en) * | 2017-06-01 | 2019-03-26 | 武汉新芯集成电路制造有限公司 | The production method and back-illuminated cmos image sensors of grating |
| CN109917502A (en) * | 2019-02-28 | 2019-06-21 | 上海集成电路研发中心有限公司 | A kind of two-dimensional grating structure and its manufacturing method |
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| CN1187249A (en) * | 1995-06-07 | 1998-07-08 | 硅光机器公司 | Method of making and apparatus for flat diffraction grating light valve |
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