CN1258935A - 栅格焊球阵列半导体器件及其制造方法 - Google Patents

栅格焊球阵列半导体器件及其制造方法 Download PDF

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CN1258935A
CN1258935A CN99126384A CN99126384A CN1258935A CN 1258935 A CN1258935 A CN 1258935A CN 99126384 A CN99126384 A CN 99126384A CN 99126384 A CN99126384 A CN 99126384A CN 1258935 A CN1258935 A CN 1258935A
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lead frame
conductor device
ball array
welding ball
grid welding
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阿部雅明
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NEC Corp
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Abstract

提供一种栅格焊球阵列半导体器件。所说半导体器件具有用树脂密封的半导体元件。此外,将引线框连接到树脂材料中的半导体元件上。引线框具有突出到树脂材料表面外的端部。

Description

栅格焊球阵列半导体器件及其制造方法
本发明涉及一种栅格焊球阵列半导体器件及其制造方法，特别涉及具有经腐蚀形成为突起的端部的引线框的栅格焊球阵列半导体器件及其制造方法。
包括引线框的封装可作为满足对半导体器件高集成度、小型化、厚度减小和较多管脚数要求的一种半导体器件封装。日本专利申请公开昭60(1985)-52050中介绍了一种有关制造可用于栅格焊球阵列半导体器件的引线框方法的技术。图1是展示具有日本专利申请公开昭60(1985)-52050中介绍的引线框的常规半导体器件的剖面图。
根据该公开中介绍的现有技术，在腐蚀金属片形成引线框的工艺中，腐蚀掉金属片一侧的大约一半。于是形成用作该侧的外部端子的突起部分110a，该突起部分在金属片的厚度方向上突起。然后，集成电路114利用键合部分112安装到引线框110的没有形成突起部分110a的另一侧。然后，用树脂118密封。此时，突起部分110a的边缘和树脂118的侧面部分共面。对于常规半导体器件，可以采用这种方法在一个工艺中制造具有用于进行外部连接的端子的引线框110。
然而，存在一个问题，即，封装安装到基片上后，难以清洗留在封装和基片间的焊剂残留物。这是由于突起部分110a的边缘或外部端子及树脂118的侧面部分共面的缘故。
一种把焊料球安放到突起部分110a上的方法可用于解决这个问题，但是该方法也存在一个问题，即，几乎不能再降低材料和制造的成本。
本发明的目的是提供一种栅格焊球阵列半导体器件及其制造方法，在该种半导体器件安装到基片上后易于清洗留在封装和基片间的焊剂残留物，可显著地降低材料和制造的成本。
根据本发明的一个方面，一种栅格焊球阵列半导体器件包括：半导体元件；密封半导体元件的树脂材料；及与树脂材料中的半导体元件连接的引线框。该引线框具有突出到树脂材料表面外的端部。
根据本发明的另一方面，一种制造栅格焊球阵列半导体器件方法包括以下步骤：形成具有在厚度方向突起的端部的引线框；把半导体元件安装到引线框上；用焊线连接设置于半导体器件上的电极与引线框；用树脂材料密封半导体元件。所说端部突出于树脂材料表面之外。
本发明可以使所说端部突出到树脂材料表面之外。所以，在被直接安装到基片上时，所说端部可用作连接端子，安装后，容易清洗焊剂残留物。因此，常规栅格焊球阵列半导体器件需要焊料球安装到封装上，以便于清洗焊剂残留物，而本发明没有这种必要，可以显著降低材料和制造成本。
图1是展示具有日本专利申请昭60(1985)-52050中介绍的引线框的常规半导体器件的剖面图。
图2是展示根据本发明一个实施例的栅格焊球阵列半导体器件的结构的剖面图。
图3是展示根据本发明该实施例的栅格焊球阵列半导体器件的结构的底视图。
图4是展示根据本发明该实施例的栅格焊球阵列半导体器件的制造方法的视图，展示了用树脂密封器件的步骤。
下面将结合附图介绍本发明的实施例。图2是展示根据本发明一个实施例的栅格焊球阵列半导体器件的结构的剖面图。图3是展示根据本发明该实施例的栅格焊球阵列半导体器件的结构的底视图。
根据该实施例的栅格焊球阵列半导体器件1用胶带12把半导体元件14安装到具有在厚度方向突起的端部10a的引线框10上。引线框10例如通过将金属片腐蚀到大约其厚度的一半而形成。
另外，焊线16将引线框10与半导体元件14上的电极相连接。然后用树脂材料18密封它们，形成预定形状的封装。顺便提及，所说端部10a突出到树脂材料18的基片安装表面外。另外，焊料层19形成于端部10a的边缘上。
该实施例的栅格焊球阵列半导体器件1的构成为，在它们被安装于基片上时，允许其上形成有焊料层19的端部10a用作端子。
顺便提及，端部10a可腐蚀成各种形状，例如圆柱形或矩形柱。然而，考虑到安装到基片上后其耐热循环性能，要求采用不容易发生应力的圆柱形。
此外，考虑到安装后容易清洗焊剂残留物，要求端部10a离衬底安装表面有0.1-0.3mm范围的高度。
另外，要求将形成于端部10a边缘上的焊料层19有5-10微米的厚度，等于将对以常规QFP(方形扁平封装)半导体器件为代表的树脂密封型半导体器件外引线所施加焊料层的厚度。
下面介绍制造该实施例上述介绍的半导体器件的方法。图4是展示根据本发明该实施例的栅格焊球阵列半导体器件的制造方法的剖面图，展示了用树脂密封器件的步骤。
首先，金属片被腐蚀大约其厚度的一半，形成具有在其厚度方向突出的端部10a的引线框10。然后，用胶带将半导体元件14安装到引线框10上。然后，用焊线16把半导体元件14上的电极连接到引线框10。
然后，如图4所示，把引线框10、半导体元件14等夹在具有预定形状的凹腔22a的上金属模具22和具有作为容纳端部10a的凹腔的凹下部分20a的下金属模具20之间。然后，让树脂从与凹腔20a和22a连接的注入部分(未示出)流入，从而用树脂密封引线框10和半导体元件14。
用树脂密封完成后，在端部10a的边缘上存在小毛刺。所以利用激光磨蚀、砂粒打磨、喷水磨蚀等方法，去掉这些小毛刺，从而使引线框10的端部10a露出。此后，在端部10a的边缘上形成焊料层19。
上述方法可以使引线框10的端部10a突出到树脂材料18的基片安装表面外。
如上所述，该实施例可使端部10a突出到封装的基片安装表面和将形成于其边缘上的焊料层19之外。因此，在直接安装到基片上时，端部10a可用作连接端子，各部分安装后，可容易进行焊剂残留物的清洗。因此，常规栅格焊球阵列半导体器件需要焊料球安装到封装上，以便于清洗焊剂残留物，而本实施例没有这种必要，可以显著降低材料和制造成本。

Claims (7)

1.一种栅格焊球阵列半导体器件，包括：
半导体元件；
将所说半导体元件密封的树脂材料；及
与所说树脂材料中的所说半导体元件连接的引线框，所说引线框的端部突出到所说树脂材料的表面外。
2.根据权利要求1的栅格焊球阵列半导体器件，还包括形成于所说端部的边缘表面上的焊料层。
3.根据权利要求1的栅格焊球阵列半导体器件，还包括将所说半导体元件与所说引线框连接的焊线。
4.根据权利要求1的栅格焊球阵列半导体器件，其中所说端部通过将作为所说引线框材料的金属片腐蚀到其厚度的大约一半而形成。
5.一种制造栅格焊球阵列半导体器件方法，包括以下步骤：
形成具有在厚度方向突出的端部的引线框；
把半导体元件安装到所说引线框上；
用焊线连接设置于所说半导体器件上的电极与所说引线框；
用树脂材料密封所说半导体元件，所说端部突出到所说树脂材料表面之外。
6.根据权利要求5的制造栅格焊球阵列半导体器件的方法，还包括在所说端部的边缘表面上形成焊料层的步骤。
7.根据权利要求5的制造栅格焊球阵列半导体器件的方法，其中形成所说引线框的步骤包括将金属片腐蚀到其厚度的大约一半的步骤。
CN99126384A 1998-12-21 1999-12-17 栅格焊球阵列半导体器件及其制造方法 Pending CN1258935A (zh)

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