CN1183640A - 半导体器件及其测试方法 - Google Patents
半导体器件及其测试方法 Download PDFInfo
- Publication number
- CN1183640A CN1183640A CN97121941A CN97121941A CN1183640A CN 1183640 A CN1183640 A CN 1183640A CN 97121941 A CN97121941 A CN 97121941A CN 97121941 A CN97121941 A CN 97121941A CN 1183640 A CN1183640 A CN 1183640A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8310355A JP2956830B2 (ja) | 1996-11-21 | 1996-11-21 | 半導体装置の製造方法 |
JP310355/1996 | 1996-11-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1183640A true CN1183640A (zh) | 1998-06-03 |
Family
ID=18004241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97121941A Pending CN1183640A (zh) | 1996-11-21 | 1997-11-21 | 半导体器件及其测试方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US5900645A (zh) |
JP (1) | JP2956830B2 (zh) |
KR (1) | KR100298566B1 (zh) |
CN (1) | CN1183640A (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1321444C (zh) * | 2003-01-14 | 2007-06-13 | 株式会社东芝 | 布线图形埋入检查方法、半导体器件制造方法及检查装置 |
CN100465649C (zh) * | 2005-02-09 | 2009-03-04 | 富士通株式会社 | 半导体器件及制造方法、器件形成基片和布线连接测试法 |
CN103048555A (zh) * | 2011-10-13 | 2013-04-17 | 无锡华润上华科技有限公司 | 薄层电阻等值线图的测试装置 |
CN106596581A (zh) * | 2016-11-18 | 2017-04-26 | 哈尔滨工业大学 | 测量表面形貌检测双层及多层薄膜层间内部缺陷的方法 |
WO2020199848A1 (zh) * | 2019-04-04 | 2020-10-08 | 惠科股份有限公司 | 测试结构、基板及其制造方法 |
CN113644053A (zh) * | 2021-08-06 | 2021-11-12 | 无锡拍字节科技有限公司 | 一种导电薄膜连续性的测试结构及方法 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2962281B2 (ja) * | 1997-06-06 | 1999-10-12 | 日本電気株式会社 | 半導体装置の検査パターンおよび半導体装置の検査方法 |
US6127193A (en) * | 1998-05-18 | 2000-10-03 | Advanced Micro Devices, Inc. | Test structure used to measure metal bottom coverage in trenches and vias/contacts and method for creating the test structure |
US6897440B1 (en) * | 1998-11-30 | 2005-05-24 | Fab Solutions, Inc. | Contact hole standard test device |
US6175125B1 (en) * | 1999-05-10 | 2001-01-16 | Taiwan Semiconductor Manufacturing Company | Semiconductor structure for testing vias interconnecting layers of the structure |
JP3749107B2 (ja) * | 1999-11-05 | 2006-02-22 | ファブソリューション株式会社 | 半導体デバイス検査装置 |
US6351516B1 (en) * | 1999-12-14 | 2002-02-26 | Jordan Valley Applied Radiation Ltd. | Detection of voids in semiconductor wafer processing |
US6421284B1 (en) | 2000-05-26 | 2002-07-16 | Hitachi, Limited | Semiconductor device |
JP3874996B2 (ja) * | 2000-05-30 | 2007-01-31 | ファブソリューション株式会社 | デバイス検査方法および装置 |
US6496559B1 (en) * | 2000-06-28 | 2002-12-17 | Advanced Micro Devices, Inc. | Sample preparation for inspection of ball contacts and internal vias |
JP3847568B2 (ja) * | 2001-03-01 | 2006-11-22 | ファブソリューション株式会社 | 半導体装置製造方法 |
JP4738610B2 (ja) * | 2001-03-02 | 2011-08-03 | 株式会社トプコン | 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法 |
JP3913555B2 (ja) * | 2002-01-17 | 2007-05-09 | ファブソリューション株式会社 | 膜厚測定方法および膜厚測定装置 |
US6723646B2 (en) * | 2002-01-25 | 2004-04-20 | Macronix International Co., Ltd. | Method for controlling and monitoring a chemical mechanical polishing process |
US7205166B2 (en) * | 2002-06-28 | 2007-04-17 | Lam Research Corporation | Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties |
US6777676B1 (en) | 2002-07-05 | 2004-08-17 | Kla-Tencor Technologies Corporation | Non-destructive root cause analysis on blocked contact or via |
US6995392B2 (en) * | 2002-08-07 | 2006-02-07 | International Business Machines Corporation | Test structure for locating electromigration voids in dual damascene interconnects |
US6924484B1 (en) | 2002-11-19 | 2005-08-02 | Kla-Tencor Corporation | Void characterization in metal interconnect structures using X-ray emission analyses |
KR100570070B1 (ko) * | 2003-11-18 | 2006-04-10 | 매그나칩 반도체 유한회사 | 습기창을 구비한 구리배선의 신뢰성 측정용 테스트패턴 및그 제조 방법 |
JP4945893B2 (ja) * | 2004-11-11 | 2012-06-06 | 大日本印刷株式会社 | パターン形成用基板 |
US7804934B2 (en) | 2004-12-22 | 2010-09-28 | Jordan Valley Semiconductors Ltd. | Accurate measurement of layer dimensions using XRF |
US7110491B2 (en) * | 2004-12-22 | 2006-09-19 | Jordan Valley Applied Radiation Ltd. | Measurement of critical dimensions using X-ray diffraction in reflection mode |
DE102005041283B4 (de) * | 2005-08-31 | 2017-12-14 | Globalfoundries Inc. | Verfahren und Halbleiterstruktur zur Überwachung der Herstellung von Verbindungsstrukturen und Kontakten in einem Halbleiterbauelement |
KR101374308B1 (ko) * | 2005-12-23 | 2014-03-14 | 조르단 밸리 세미컨덕터즈 리미티드 | Xrf를 사용한 층 치수의 정밀 측정법 |
US7481579B2 (en) * | 2006-03-27 | 2009-01-27 | Jordan Valley Applied Radiation Ltd. | Overlay metrology using X-rays |
US20070274447A1 (en) * | 2006-05-15 | 2007-11-29 | Isaac Mazor | Automated selection of X-ray reflectometry measurement locations |
IL180482A0 (en) * | 2007-01-01 | 2007-06-03 | Jordan Valley Semiconductors | Inspection of small features using x - ray fluorescence |
US20080237811A1 (en) * | 2007-03-30 | 2008-10-02 | Rohit Pal | Method for preserving processing history on a wafer |
US7680243B2 (en) * | 2007-09-06 | 2010-03-16 | Jordan Valley Semiconductors Ltd. | X-ray measurement of properties of nano-particles |
JP5313474B2 (ja) * | 2007-09-28 | 2013-10-09 | スパンション エルエルシー | 半導体装置およびその製造方法 |
US8243878B2 (en) * | 2010-01-07 | 2012-08-14 | Jordan Valley Semiconductors Ltd. | High-resolution X-ray diffraction measurement with enhanced sensitivity |
US8687766B2 (en) | 2010-07-13 | 2014-04-01 | Jordan Valley Semiconductors Ltd. | Enhancing accuracy of fast high-resolution X-ray diffractometry |
US8437450B2 (en) | 2010-12-02 | 2013-05-07 | Jordan Valley Semiconductors Ltd. | Fast measurement of X-ray diffraction from tilted layers |
CN102901471B (zh) * | 2011-07-26 | 2015-06-03 | 中国科学院物理研究所 | 纳米图形化和超宽频电磁特性测量系统 |
US8781070B2 (en) | 2011-08-11 | 2014-07-15 | Jordan Valley Semiconductors Ltd. | Detection of wafer-edge defects |
US9390984B2 (en) | 2011-10-11 | 2016-07-12 | Bruker Jv Israel Ltd. | X-ray inspection of bumps on a semiconductor substrate |
US9389192B2 (en) | 2013-03-24 | 2016-07-12 | Bruker Jv Israel Ltd. | Estimation of XRF intensity from an array of micro-bumps |
US9632043B2 (en) | 2014-05-13 | 2017-04-25 | Bruker Jv Israel Ltd. | Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF |
US9726624B2 (en) | 2014-06-18 | 2017-08-08 | Bruker Jv Israel Ltd. | Using multiple sources/detectors for high-throughput X-ray topography measurement |
US9606073B2 (en) | 2014-06-22 | 2017-03-28 | Bruker Jv Israel Ltd. | X-ray scatterometry apparatus |
US9829448B2 (en) | 2014-10-30 | 2017-11-28 | Bruker Jv Israel Ltd. | Measurement of small features using XRF |
US10684238B2 (en) | 2016-01-11 | 2020-06-16 | Bruker Technologies Ltd. | Method and apparatus for X-ray scatterometry |
US10816487B2 (en) | 2018-04-12 | 2020-10-27 | Bruker Technologies Ltd. | Image contrast in X-ray topography imaging for defect inspection |
JP2019191167A (ja) | 2018-04-23 | 2019-10-31 | ブルカー ジェイヴィ イスラエル リミテッドBruker Jv Israel Ltd. | 小角x線散乱測定用のx線源光学系 |
WO2020008420A2 (en) | 2018-07-05 | 2020-01-09 | Bruker Jv Israel Ltd. | Small-angle x-ray scatterometry |
CN112071766B (zh) * | 2020-08-25 | 2022-08-09 | 上海华力集成电路制造有限公司 | 接触孔填充缺陷监控方法及其监控系统 |
US11781999B2 (en) | 2021-09-05 | 2023-10-10 | Bruker Technologies Ltd. | Spot-size control in reflection-based and scatterometry-based X-ray metrology systems |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4028776C2 (de) * | 1990-07-03 | 1994-03-10 | Samsung Electronics Co Ltd | Verfahren zur Bildung einer metallischen Verdrahtungsschicht und Füllen einer Kontaktöffnung in einem Halbleiterbauelement |
JP3332456B2 (ja) * | 1992-03-24 | 2002-10-07 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置 |
US5607718A (en) * | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
JPH0810693A (ja) * | 1994-06-30 | 1996-01-16 | Dainippon Screen Mfg Co Ltd | レジスト膜の乾燥方法及び装置 |
US5614114A (en) * | 1994-07-18 | 1997-03-25 | Electro Scientific Industries, Inc. | Laser system and method for plating vias |
US5514974A (en) * | 1994-10-12 | 1996-05-07 | International Business Machines Corporation | Test device and method for signalling metal failure of semiconductor wafer |
US5609775A (en) * | 1995-03-17 | 1997-03-11 | Chartered Semiconductor Manufacturing Pte Ltd. | Dry etch process for titanium-tungsten films |
US5637186A (en) * | 1995-11-22 | 1997-06-10 | United Microelectronics Corporation | Method and monitor testsite pattern for measuring critical dimension openings |
-
1996
- 1996-11-21 JP JP8310355A patent/JP2956830B2/ja not_active Expired - Fee Related
-
1997
- 1997-11-21 US US08/976,082 patent/US5900645A/en not_active Expired - Fee Related
- 1997-11-21 CN CN97121941A patent/CN1183640A/zh active Pending
- 1997-11-21 KR KR1019970063133A patent/KR100298566B1/ko not_active IP Right Cessation
-
1999
- 1999-01-25 US US09/235,756 patent/US6159756A/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1321444C (zh) * | 2003-01-14 | 2007-06-13 | 株式会社东芝 | 布线图形埋入检查方法、半导体器件制造方法及检查装置 |
CN100465649C (zh) * | 2005-02-09 | 2009-03-04 | 富士通株式会社 | 半导体器件及制造方法、器件形成基片和布线连接测试法 |
CN103048555A (zh) * | 2011-10-13 | 2013-04-17 | 无锡华润上华科技有限公司 | 薄层电阻等值线图的测试装置 |
CN103048555B (zh) * | 2011-10-13 | 2015-07-01 | 无锡华润上华科技有限公司 | 薄层电阻等值线图的测试装置 |
CN106596581A (zh) * | 2016-11-18 | 2017-04-26 | 哈尔滨工业大学 | 测量表面形貌检测双层及多层薄膜层间内部缺陷的方法 |
CN106596581B (zh) * | 2016-11-18 | 2019-04-30 | 哈尔滨工业大学 | 测量表面形貌检测多层薄膜层间内部缺陷的方法 |
WO2020199848A1 (zh) * | 2019-04-04 | 2020-10-08 | 惠科股份有限公司 | 测试结构、基板及其制造方法 |
US11719966B2 (en) | 2019-04-04 | 2023-08-08 | HKC Corporation Limited | Test structure, substrate and method for manufacturing substrate |
CN113644053A (zh) * | 2021-08-06 | 2021-11-12 | 无锡拍字节科技有限公司 | 一种导电薄膜连续性的测试结构及方法 |
Also Published As
Publication number | Publication date |
---|---|
US5900645A (en) | 1999-05-04 |
JPH10154737A (ja) | 1998-06-09 |
US6159756A (en) | 2000-12-12 |
KR100298566B1 (ko) | 2001-10-27 |
KR19980042778A (ko) | 1998-08-17 |
JP2956830B2 (ja) | 1999-10-04 |
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Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030626 |
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