CN1178342C - 集成式波长监测器 - Google Patents
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Abstract
公开了集成式波长监测器和获得该设备的方法。该设备适合集成到用于光纤通信的半导体激光器中,其可由以下方法实现:通过沉积数层不同透明材料构成一个光学滤波器,把干涉滤波器直接制作在位置传感光波检测器上。干涉滤波器也可以单独制造,然后直接安装在检测器的顶部。集成位置传感设备(13)以一定倾角安装在激光器的背面,与标准功率监测器的位置相同。照射在具有干涉滤波器的位置传感检测器上的光束的横向位置,以电流形式导出,它依赖于入射光的波长,这一导出位置用于波长监测。
Description
技术领域
本发明涉及激光波长的监测,更具体地讲涉及用于激光器的子组件的集成式波长监测方法及其设备。
背景技术
光纤传输是当今电信的主要传输方法之一。波分复用法(WDM)是在一根光纤上进行多个信道传输的优先考虑的方法。为此,典型的方式是使用具有精确控制波长的分布式反馈激光器(DFB激光器)作为发送器。
在WDM系统中,各信道间隔的典型差值为100GHz,相当于0.8纳米(毫微米)或激光波长的0.05%。为避免信道之间的干扰,必须保证波长偏差在±0.1纳米之内。在当今系统级中,典型的方式是使用分离设备对全信道进行监测。
一些用于获得WDM光传输系统的波长监测和控制的解决方法已经被公开。美国专利No.5,825,792公开了用于具有分布式反馈(DFB)的激光发射源的紧凑型波长监测和控制组件,该组件包括具有一定角度的Fabry-Perot校准器和两个分离的光波检测器,在反馈环路中使用它们的差动输出,用于稳定激光源的波长。
另一美国专利No.5,896,201公开了用于波长监测和控制的光学设备。该设备有一楔形光学元件,用于将光束分为成不同的两束反射光束,并经过滤波器到达第一和第二光波检测器。根据波长特性的差异,依据第一和第二光波检测器的输出可以对光束的波长进行监测。
再有在国际专利申请WO95/20144中公开的光波波长传感器,包括楔形Fabry-Perot校准器,可显示在其宽度方向不同波长的光穿过时的谐振波,和检测器阵列,用于检测所发生的谐振波峰的空间布置。
另一美国专利No.5,305,330公开一个系统,该系统包括一个激光二极管和用于稳定该激光二极管波长的一个系统。该系统包括:光束分束器、用于测量的衍射光栅和至少两个光检测器。
迄今发现的解决方法都相对复杂,或多或少地很难在标准激光设备中简便地实现。然而,具有集成式波长监测器的激光器将是市场上颇具吸引力的产品。因此需要有一种用于监测激光设备波长的简单紧凑的集成设备。
发明内容
适合集成到用于光纤通信的半导体激光器中的波长监测器,可由以下方法实现:干涉滤波器直接制作在位置传感光波检测器中或直接安装在检测器的顶部。检测设备以一定角度安装在激光器的后面,与标准功率监测器的位置相同。照射在具有干涉滤波器的位置传感设备的光的横向位置以电流形式导出,它依赖于入射光的波长,并被用于波长监测。
本发明提供一种用于获得光波波长监测器的方法,其特征在于采用了如下步骤:
使用位置传感检测器10,通过从至少两个检测电极提取电流,提供入射光的位置和强度信息;
将干涉滤波器12直接设置在位置传感检测器10的顶部,从而形成集成式波长传感设备13;
在距光源一定距离处以与其成一定角度安装形成的波长传感设备13,使其用作光波波长监测器。
本发明还提供一种用于形成光波波长监测器的设备,其特征在于,
一个位置传感监测器10,用于通过使用从至少两个位置传感二极管电极提取的电流,来提供入射光的位置和强度的信息;
一个干涉滤波器12,直接制作在位置传感检测器10的顶部,从而构成集成式波长传感设备13,这里,将波长传感设备13距光源一定距离以与其成一定角度安装,使波长传感设备起到光波波长监测设备的作用。
附图说明
本发明及其进一步的目的和优点可通过参照下述说明结合附图得到最好的理解,附图中:
图1表示一个按照现有技术的位置传感二极管的典型实施例;
图2表示根据本发明的位置传感光波检测器和干涉滤波器的组合;
图3表示在激光设备的背面一定距离处以与其成一定角度安装图1所示集成式波长监测器;和
图4表示位置传感设备的堆积滤波器形成的线,该线的位置与波长相关。
具体实施方式
图1中显示位置传感二极管的通用实施例。位置传感二极管是普通光电二极管改造而成。通过使用两个前端的电极1和电极2,由入射光3产生的光电流在前端电极被分开,分别生成前端电极的电流I1和电流I2。于是可以从得到的两个电流的比值提取入射光的侧向位置x。这就是本发明应用中所使用的通常称作位置传感检测器的位置传感检测器的基本原理。
根据本发明改进的波长监测器是通过创造性地将位置传感检测器和干涉滤波器组合而成。这样,位置传感检测器10构成光波检测器,从中可以提取入射光的位置及其强度。位置传感检测器是通过在光电二极管检测器设置几个电极得到的。通过观测相应电极的电流导出位置及强度。
在图2所示的基本实施例中,制作在位置传感检测器10顶部的干涉滤波器12是由沉积至少两层不同的光透明材料构成。而另一实施例的干涉滤波器是分开制造,然后组合到位置传感检测器芯片10上。监测器的分辨率和波长范围可以通过干涉滤波器12的隔层厚度控制。例如在一典型实施例中滤波器的形状就如同Fabry-Perot校准器。通过采用热膨胀低的材料作为隔层,可以使其对温度依赖降至最小。
在应用本发明的一个典型的实施例中,如上所述制造的波长监测器13在激光器14的背面在一定距离以与其成一定的角度安装,如图3所示。另一可选方案,使从前面的部分光线直接进入监测器。
由于仅以特定角度入射的光可透过滤波器12,因此如图4所示在位置传感检测器10上形成线条15,此处线条的位置依据波长而定。然后从通过光检测器的电极检测的电流可以提取光的波长。
检测器可简便地采用可用的标准工艺制造。本监测器可直接替代使用在当前激光器件中的功率监测器。例如在瑞典的Partille市的SiTek Electro Optics公司,就有商业生产的位置传感检测器。
通过在光纤前端安装根据本发明的组件13,可得到一低成本、高可靠性的波长检测仪表。通过在位置传感检测器采用更多的电极甚至可以检测双模式的激光器。通过测量及时分解的波长信号,可容易地监测到激光器的线性调频脉冲。
熟知本技术领域的人员应理解对本发明所作的各种修改和变化均没有脱离本发明的范围。
Claims (10)
1.一种用于获得光波波长监测器的方法,其特征在于:采用了如下步骤:
使用位置传感检测器(10),通过从至少两个检测电极提取电流,提供入射光的位置和强度信息;
将干涉滤波器(12)直接设置在位置传感检测器(10)的顶部,从而形成集成式波长传感设备(13);
在距光源一定距离处以与其成一定角度安装形成的波长传感设备(13),使其用作光波波长监测器。
2.如权利要求1所述的方法,其特征在于:还有以下步骤,通过沉积至少两个光学透明材料层制成的多层材料的光波滤波器,直接在位置传感监测器(10)的顶部制造干涉滤波器(12)。
3.如权利要求1所述的方法,其特征在于:还有以下步骤,可单独制造由至少两个材料层构成的干涉滤波器(12),然后把得到的干涉滤波器(12)与位置传感检测器(10)组合在一起。
4.如权利要求1所述的方法,其特征在于:还有以下步骤,干涉滤波器(12)的隔层采用热膨胀低的材料,使其对温度依赖降至最小。
5.如权利要求1所述的方法,其特征在于:还有以下步骤,使用从位置传感检测器导出的输出信号来控制激光器的波长。
6.一种用于形成光波波长监测器的设备,其特征在于:
一个位置传感监测器(10),用于通过使用从至少两个位置传感二极管电极提取的电流,来提供入射光的位置和强度的信息;
一个干涉滤波器(12),直接制作在位置传感检测器(10)的顶部,从而构成集成式波长传感设备(13),这里,将波长传感设备(13)距光源一定距离以与其成一定角度安装,使波长传感设备起到光波波长监测设备的作用。
7.如权利要求6所述的设备,其特征在于:通过沉积至少两层不同的光学透明材料形成一个光波滤波器,直接在位置传感监测器(10)的顶部制造干涉滤波器(12),形成集成式波长监测设备。
8.如权利要求6所述的设备,其特征在于,所述干涉滤波器(12)单独由至少两个不同的光学透明材料层制造,形成该滤波器,随后与位置传感检测器(10)组合在一起,从而生成集成式波长监测设备。
9.如权利要求6所述的设备,其特征在于:所述干涉滤波器(12)的隔层采用热膨胀低的材料,使其对温度的依赖降至最小。
10.如权利要求6所述的设备,其特征在于:所述波长控制器使用从位置传感检测器(10)导出的输出信号控制激光器(14)的波长。
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SE0000041A SE517341C2 (sv) | 2000-01-10 | 2000-01-10 | Integrerad våglängdsmonitor för laserljus |
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US (1) | US6639679B2 (zh) |
EP (1) | EP1269586B1 (zh) |
JP (1) | JP2003520439A (zh) |
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AT (1) | ATE275764T1 (zh) |
AU (1) | AU2001227209A1 (zh) |
DE (1) | DE60105403T2 (zh) |
SE (1) | SE517341C2 (zh) |
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US9029800B2 (en) | 2011-08-09 | 2015-05-12 | Palo Alto Research Center Incorporated | Compact analyzer with spatial modulation and multiple intensity modulated excitation sources |
US8723140B2 (en) | 2011-08-09 | 2014-05-13 | Palo Alto Research Center Incorporated | Particle analyzer with spatial modulation and long lifetime bioprobes |
WO2019053959A1 (ja) * | 2017-09-13 | 2019-03-21 | 株式会社カネカ | 光電変換素子および光電変換装置 |
CN111052403B (zh) | 2017-11-15 | 2023-01-31 | 株式会社钟化 | 光电转换装置 |
DE102019210950A1 (de) * | 2019-07-24 | 2021-01-28 | Robert Bosch Gmbh | LIDAR-Sensor zur optischen Erfassung eines Sichtfeldes und Verfahren zur optischen Erfassung eines Sichtfeldes |
DE102020202824A1 (de) | 2020-03-05 | 2021-09-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Sensorvorrichtung unter verwendung der winkelabhängigkeit eines dichroitischen filters |
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DE3855226T2 (de) * | 1987-02-03 | 1996-09-05 | Fujitsu Ltd | Holographische Ablenkungsvorrichtung |
EP0284908B1 (de) * | 1987-03-30 | 1993-10-27 | Siemens Aktiengesellschaft | Anordnung zur Steuerung oder Regelung einer Emissionswellenlänge und emittierten Leistung eines Halbleiterlasers |
JP2840709B2 (ja) * | 1989-12-28 | 1998-12-24 | 京セラ株式会社 | 集積型半導体レーザ |
JPH05275731A (ja) * | 1992-03-25 | 1993-10-22 | Sharp Corp | フォトダイオード |
AT396841B (de) | 1992-04-02 | 1993-12-27 | Rsf Elektronik Gmbh | Anordnung zur stabilisierung der wellenlänge des von einer laserdiode abgegebenen lichtstrahlesund laser-interferometer |
WO1995020144A1 (en) | 1994-01-20 | 1995-07-27 | British Telecommunications Public Limited Company | Optical wavelength sensor |
JPH07226524A (ja) * | 1994-02-10 | 1995-08-22 | Olympus Optical Co Ltd | 光電変換装置 |
US5825792A (en) * | 1996-07-11 | 1998-10-20 | Northern Telecom Limited | Wavelength monitoring and control assembly for WDM optical transmission systems |
JP3745097B2 (ja) | 1997-10-14 | 2006-02-15 | 富士通株式会社 | 波長のモニタリング及び波長制御のための光デバイス |
US6186937B1 (en) * | 1999-07-30 | 2001-02-13 | Lucent Technologies, Inc. | Method and device for obtaining a desired phase of optical characteristic of a fabry-perot etalon |
-
2000
- 2000-01-10 SE SE0000041A patent/SE517341C2/sv not_active IP Right Cessation
- 2000-01-28 TW TW089101492A patent/TW484269B/zh not_active IP Right Cessation
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- 2001-01-08 WO PCT/SE2001/000018 patent/WO2001052369A1/en active IP Right Grant
- 2001-01-08 EP EP01901625A patent/EP1269586B1/en not_active Expired - Lifetime
- 2001-01-08 AU AU2001227209A patent/AU2001227209A1/en not_active Abandoned
- 2001-01-08 DE DE60105403T patent/DE60105403T2/de not_active Expired - Lifetime
- 2001-01-08 CN CNB018035485A patent/CN1178342C/zh not_active Expired - Fee Related
- 2001-01-08 JP JP2001552483A patent/JP2003520439A/ja active Pending
- 2001-01-08 AT AT01901625T patent/ATE275764T1/de not_active IP Right Cessation
- 2001-01-09 US US09/756,127 patent/US6639679B2/en not_active Expired - Lifetime
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ATE275764T1 (de) | 2004-09-15 |
US6639679B2 (en) | 2003-10-28 |
SE517341C2 (sv) | 2002-05-28 |
DE60105403D1 (de) | 2004-10-14 |
AU2001227209A1 (en) | 2001-07-24 |
DE60105403T2 (de) | 2005-09-29 |
SE0000041D0 (sv) | 2000-01-10 |
JP2003520439A (ja) | 2003-07-02 |
SE0000041L (sv) | 2001-07-11 |
CN1404640A (zh) | 2003-03-19 |
EP1269586B1 (en) | 2004-09-08 |
US20010007501A1 (en) | 2001-07-12 |
WO2001052369A1 (en) | 2001-07-19 |
EP1269586A1 (en) | 2003-01-02 |
TW484269B (en) | 2002-04-21 |
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