CN1118880A - 射频识别特征片 - Google Patents
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Abstract
本发明是一个射频识别特征片,它包括安装在一块衬底上的一个具有射频的半导体芯片、逻辑电路、存储器电路的一个天线。天线可由芯片用来将入射的射频信号加以调制,从而向主站发送信息。该天线包括一个或更多长度的细连线,后者用绕线连接法直接接至芯片。芯片和天线的组合件用有机物薄膜盖加以封装。
Description
本发明涉及射频(RF)特征标记领域。更具体地说,本发明涉及一种改进的小尺寸、低成本的可发射多位信息的RF特征片(tag)。
一般说来,电路是在硬的印制电路板或软的衬底上制做的。印制电路板包括诸如环氧树脂或环氧玻璃板那样的材料。一种可供在其上面制做这类电路的普通种类是FR4。另一种称作flex的软衬底包括聚酰亚胺上的铜制物。这些电路通常用于汽车、家用电器和一般耦合连接。
一种众所周知的用于将半导体电路或“芯片”固定在电路板或软结构上的技术是绕线连接。绕接线是用直径在25微米范围内的细线制成,并且很短。一般绕接线长度为1毫米(mm)左右。由于以下原因,这些绕接线平时都取得很短:1.绕接的小直径使它很不结实。2.在常用电路中有很多绕接点,绕接线愈长,绕接点之间愈易发生电气短路。3.绕接线增长会增加自感和互感,这将使电路的电气性能变坏。
射频识别(RFID)只是用于识别对象的识别技术中的一个。RFID系统的关键在于携带信息的特征片(tag)。该特征片对从主站接收到的编码RF信息作出响应。该特征片将射入的RF载波信号反射回给主站。当特征片按照它的程序控制信息协议将反射信号加以调制时信息即发送出去。
该特征片(tag)包括一个具有RF电路、逻辑电路和存储器的半导体芯片。该特征片还具有一根天线,并通常具有一组分离元件、电容和二极管,例如,在有源特征片的情况下同时具有电池,还有用于安装元件的衬底,元件间的连线,和一种物理封装的装置。特征片的另一类无源特征片没有电池。它们从用于向特征片进行查询的RF信号中提取能量。一般情况下,制作RFID特征片时将单个元件都安装到电路板上。这可以或者通过短线绕线连接,或者在板和电路元件:芯片、电容、二极管、天线之间进行焊接而实现。电路板可以是环氧玻璃钢板成分或陶瓷。天线通常是焊到电路板上的环状线,或包括电路板上蚀刻或电镀的金属线。整个装配件可以封装在塑料盒中,也可以模塑入三维塑料包装中。
虽然RFID技术的应用不如其他ID技术(例如条码)那样广泛,但它正在某些领域,尤其是车辆识别领域中变为流行的技术。
在制造特征时缺少底层结构、特征片的高成本、大部分特征片大而重、特征片灵敏度和工作范围的问题、同时读取多个特征片的需要,这些都阻碍了RFID的发展。普通的特征片的价格在5至10美元的范围内,一些公司在集中开发壁嵌用途,一些现有技术用于识别铁路棚车。RF特征片现用于自动收费技术,例如高速公路和桥梁收费。RF特征片正试在公共汽车上用作无接触交费卡。雇员识别牌和安全牌已经生产,动物识别标记牌也可在市场上买到,还有用于在生产过程中跟踪元件的RFID系统。
在从PC到板或软板制造RF特征片时的一个限制是软板或板必须先制造出来,对于很大的特征片需求量(大于一亿特征片),必须建立新车间以提供制造板或软板所需生产能力,从而满足特征片的要求。此外,使用这些技术制造的RF特征片在很多应用场合太贵,例如,条码是一种用于识别的技术,它比现有RF特征标记技术的费用低得多。
本发明的一个目的是改进的射频识别特征片。
本发明的一个目的是改进的低成本的用商品材料制成的射频识别特征片。
本发明的另一个目的是改进的可以极大批量生产的射频识别特征片。
本发明是一种新型射频(RF)特征片,它包括一个具有逻辑电路、存储器和射频电路的半导体电路。该半导体安装在衬底上并能够通过天线接收RF信号,该天线通过半导体上的接点和半导体在电气上连通。
该天线是新型的,具有新结构,它的构成是绕线连接技术的新用途。天线具有一根或多根连线,每根连线通过一根或两根绕接线和半导体的接点相连接。(在一个最佳实施例中,天线由一对或众多的线对组成)。在绕线连接方法和最终结构中,不是在短线的另一端形成另一个接点,而是将线伸出一段天线设计所需长度,并将线的第二端头切断而不在第二端头做任何电气连接。在有些最佳实施例中,线的第二端头用粘合剂或通过衬底的局部加热来将端头固定在衬底上。就这样,绕线连接方法用于实际上制造RF特征片电路的一个元件(天线)而不是用于连接两个元件。最后的新型天线结构是一根通过连线接至电路的长线。新型RF特征片的元件包装在有机物盖内,该盖是这类装置的新用途。
图1是用于显示单天线射频特征片实施例的本发明的等角图。
图2是用于显示多天线射频特征片实施例的本发明的等角图。
图3是用于显示带有不同定位方向的多天线射频特征片实施例的本发明的等角图。
图4是用于显示带有单环天线射频特征片的本发明实施例的等角图。
图5是用于显示带有多环天线射频特征片的本发明实施例的等角图。
图6是用于显示带有单环天线射频特征片的本发明的等角图,其中天线两端由开口舌片加以固定。
图7是用于显示带有单环天线射频特征片的本发明的顶视图,其中开口舌片将天线固定,使天线在二维方向上定位。
图8是用于显示带有多天线射频特征片实施例的本发明顶视图。
图9是用于显示一块衬底上两块带有环状天线的特征片的本发明实施例的顶视图。
图10是显示带有单环天线的射频特征片的本发明的等角图,其中天线两端由销柱固定。
图1是一种新型射频特征片100的图,该特征片包括一块衬底141、一个半导体电路111、一个第一接点121、一个第二接点122、一根由绕接点131A接至第一接点121的第一连线131、和由绕接点132A接至第二接点122的第二连线132。这些元件由有机物盖151所罩住,该盖151对包括连线(131、132)、绕接点(131A、132A)和电路111在内的天线133提供环境保护。
衬底141系由有机物薄片制成。最佳薄片是也被称为mylar的聚脂(Mylar是杜邦的注册商标)。另一个最佳薄片是也称为Kap-lon的聚酰亚胺(Kapton是杜邦的注册商标)。这些材料用作衬底141,并在技术上是众所周知的。
半导体电路111具有一个存储器、逻辑电路和射频(RF)电路,并在最佳实施例中没有电池。象这样用于RF特征片的电路是众所周知和市场上现成的,利用粘合剂或通过局部加热将衬底141再熔,可将半导体电路固定在衬底上。半导体也还有一个或更多个接点(121和122)。接点(121和122)提供了接向半导体RF电路的输入和输出(I/O)连接。提点121和122具有可由半导体111内逻辑电路加以改变的阻抗。当一个送至RF特征片的RF信号由半导体111内的电路所检测到时,半导体111内的逻辑电路按照一些预先编好程序的逻辑将触点间阻抗加以改变。这个阻抗的改变将由RF特征片反射的RF信号加以调制。这样的调制使RF特征片得以向原先发送RF信号的主站送回信息。
接至半导体111的天线在接收RF信号和发送(反射回去)调制的RF信号中起着重要作用。本发明是一个新型天线和半导体结构。
一个最佳天线和半导体结构如分别接至接点121和122的连线131和132。在此实施例中这些连线用绕线连接法分别接在绕接点处131A和132A。虽将绕线连接法用于接线是众所周知的,但在本发明中绕线连接法不用于电路的已制成元件结构。在本发明中,绕线连接法制成一个新型天线和连接结构,后者满足半导体电路111的发送(信号反射)和接收要求。
本实施例中,每一根连线用绕线连接技术接至一个绕接点(分别是131A和132A),展伸至规定长度,然后切断,而每根连线的切断头则不接任何元件。切断操作可用任何大家熟知的方法,包括刀片(铁模、闸刀)、机械切割器、机械钳、激光、等等。此外,连线131和132可不用绕线连接而用其他方法接到绕接点(131A和132A)上,包括:激光焊、焊接和导电环氧树脂。
连线的切断头可用多种方法加以固定。连线的切断头可用放在切断头下面的一小点粘合剂固定在衬底上。也可以将切断头固定处的衬底局部加热,使该处衬底变粘,从而将切断头粘住,从而将它固定。衬底的局部加热技术是大家熟悉的,包括使用工具或用激光束聚焦在加热点上,从而实现点加热。粘合剂也是众所周知的。它们包括环氧树脂、硅氧烷和酚丁醛(phenolic—butyral)。
将切断头固定到衬底上的另一个方法是加热连线(131、132),使切断头将接触处的衬底加热,从而将切断头固定到衬底上。连线可用感应加热、电阻加热、激光加热、或任何其他用于此目的的方法进行加热。另一方案是,位于连线下部的衬底部分可加热,以使连线的一部分或全部埋入衬底内。要得到此效果,也可加热连线并对连线的一部分(或全部)加压,以使连线(131、132)的一部分(或全部)埋入衬底。
使用这类新型结构,可以只使用商品材料就制造出RF特征片天线元件,这些商品材料是用于绕线连接的连线和用作衬底的未刻模的有机物塑料(例如聚酯)。不需要任何电路板或已刻模的软衬底材料。由于只需商品材料(线和有机物塑料)用于生产这些新型特征片结构,就可以不受现有生产底层结构的限制,低廉地制造大量(大于一亿)特征片。
连线(131、132)长度决定于RF特征片运行时的RF信号频率。这些频率可以是可以传送的任何频率。然而在更好的实施例中,频率是在大于300兆赫的范围内。在此频率范围内天线的合理长度能制造来产生共振。更为有利的频率范围是在900兆赫至20京赫之间。最佳频率是由联邦通信委员会批准用于RF特征片的频率,它们中有0.915、1.92、2.45和5.0京赫。
为了产生最佳共振天线,包括天线在内的两根连线(131、132)的长度(162、163)是相等的。在最佳实施例中,每个长度(162、163)是四分之一波长。更具体地说,每根线的长度等于(C/4)×f,其中C是光速和f是RF特征片运行的射频105。实际上考虑到电容影响,长度将略小些(大约5%的系数)。相似地,162加上163的长度之和是一半波长。而实际上所用全部长度为0.95×(C/2)×f。下面当涉及特定长度时,它将是长度(162加以163)的总和或半波长的长度。全部天线连线(131、132)的长度(162、163)的可用范围是在10毫米到1000毫米间的长度。天线连线长度的更好范围是在28毫米到150毫米间。天线连线(131、132)的特定可用长度(162、163)是150mm、74mm、58mm、28mm长度,它们和上述频率相对应。
用于构成天线的连线是那些用于短线绕线连接的线。线径170可以是在25微米和250微米间。连线可由铝合金、铜合金、金合金、铜、覆金铜或金。这些连线是可从许多来源购得的商品材料,例如,来源可以是Alabama州Selam的美国细线公司。由于价格低廉,铝合金是最佳的。其他材料可基于价格、是否容易购买、和与芯片触点的可焊接性来进行选择。这类材料、这种直径的连线用于制造RF特征片天线被认为是新颖的。
图1中的粘合剂161将衬底141固定到盖151上。该粘合剂用于固定芯片和连线并将包装加以密封。在衬底整个上部使用粘合剂而不是只用于包装的四周,就能消除可以积累潮气的空隙,而后者是不允许形成的。由于潮气会加快腐蚀,排除潮气将改善包装的可靠性。在半导体工业中常用的粘合剂包括环氧树脂、硅树脂和酚醛丁缩醛。这种包装的特点是使用低熔点聚合物作为最佳粘合剂,如EVA或乙酸乙烯树脂。EVA在图书装订和食品工业中已广为应用,但在半导体工业中在RF特征片结构上的应用却是新颖的。在不同最佳实施例中,粘合剂161可以围绕元件(天线、半导体)就地放在衬底上,或者在将盖151放到衬底141上之前将粘合剂161放在盖151上。
天线(131、132)、半导体111和衬底141使用RF特征片技术所用新技术用有机物盖151加以封装。这些元件放在层压机中,后者将因加热而变得软而粘的有机物材料(乙基·乙烯基乙酸)在压力下加到结构上。这样一来,不平的面的空隙都填以有机物材料。在更佳实施例中,有机物材料包括两层,一层是有机物材料151和另一层是有机物粘合剂161。这种情况下也要加热和加压。加热使粘合剂流动以填充结构的不平的面的空隙。另一种最佳实施例使用压敏粘合剂而不必加热。
图2是一种新型射频特征片200的图,该特征片200包括一块衬底141、一个半导体电路211、第一接点221、第二接点222、第三接点223、第四接点224、由绕接点231A接至第一接点221的第一连线231、和由绕接点232A接至第二接点222的第二连线232、和由绕接点233A接至第三接点223的第三连线233、和由绕接点234A接至第四接点224的第四连线234。这些元件由一个有机物盖151所罩住,该盖151用作连线(231—234)、绕接点(231A—234A)和电路211的环境保护物。这些绕接点(231A—234A)是上面所描述过的或类似的绕接点。
该图包括两根以上的连线(231—234)来形成多套天线(231—232和233—234),例如,天线241包括连线231和232,及天线242包括连线233和234。这种多天线增加了由芯片211接收的信号的强度,并提供了冗余度。天线可以不同长度,以便在不同频率下产生共振。
图3是一种新型射频特征片300的图,该特征片300包括一块衬底141、一个半导体电路311、第一接点321、第二接点322、第三接点323、第四接点324、由绕接点321A接到第一接点321的第一连线331、和由绕接点322A接到第二接点322的第二连线332、和由绕接点323A接到第三接点323的第三连线333、和由绕接点324A接到第四接点324的第四连线334。这些元件由有机物盖151所罩住,该盖151为连线(331—334)、接点(321A—324A)和电路311提供了环境保护。在最佳实施例中,接点是接点(321A—324A)或如上所述的类拟接点。
图3中两对线(331、333和332、334)安排在不同的互相不平行的方向,最好是垂直以便在互相垂直的方向上获得最大的接收和发送的射频能量。这就消除了接收/发送模式中的空白。
图4是新型射频特征片400的图,该特征片400包括一块衬底141、一个半导体电路411、第一接点421、第二接点422、在连线一端由绕接点421A接至第一接点421的连线431,而在线431的另一端将同一连线431由绕接点422A接至第二接点422。这些元件由有机物盖151所罩住,该盖151用作连线431、绕接点(421A、422A)和电路411和环境保护物。在最佳实施例中,绕接点(421A、422A)是绕线接点或如所述的类似接点。在另一最佳实施例中,一种聚合物封装材料405用于芯片的封装,将相邻导线彼此绝缘,改善防振和防震性能,保证装置和接点的机械刚度,以及对空气侵蚀和灰尘提供防护。该有机物封装材料最好是不透明的,以保护光敏电路并形成100微米(4密耳)的薄保护层。
在该图中,连线431用来形成了一个单环天线433。此天线比天线133(图1所示包括连线131和132的天线)的阻抗要高。它能向芯片411上的高阻抗输入电路传送更多能量。该环是用绕线连接工具将线431移动而成。在最佳实施例中,依靠衬底上的粘合剂将连线固定在衬底上,以便于形成单环。
图5是一新型射频特征片500的图,该特征片500包括一块衬底141、一个半导体电路511、第一接点521、第二接点522、由绕接点531A在一端接至第一接点521的连线531、以及同一根连线531由绕接点532A在连线另一端接至第二接点522。第二环状天线由第三接点523、第四接点524和连线536所组成,该连线536的一端由绕接点533A接至第三接点523,而它的另一端由绕接点534A接至第四接点524。这些元件用有机物盖151罩住,该盖151用作连线(531、536)、绕接点(531A一534A)和电路511的环境保护物。这些绕接点是如上所述的绕线接点或类似接点。
增加第二环状天线后能增加所接收信号的总强度,从而增加特征片的灵敏度。
图6是新型射频特征片600的图,该特征片600包括一块衬底141、一个半导体电路611、第一接点621、第二接点622、在一端由绕接点631A接至第一接点621的连线631以及同一根连线631的另一端由绕接点632A接至第二接点622、这些元件由有机物盖151罩住,该盖151用作连线631、绕接点(631A和632A)和电路611的环境保护物。衬底141上冲出的冲口681和682用于在制造过程中将连线在两端挡住。在衬底上冲出一个冲口681,产生一个可弯曲的舌片685,用于在连线弯成环时将线挂住。此冲口可用冲压工具制做。压缩气流687将舌片推动,也即将它从衬底弯起,直至连线可在弯曲的舌片685和余下衬底间弯成环。
图7是新型射频特征片700的顶视图,该特征片700包括一块衬底141、一个半导体电路711、第一结点721、第二结点722、接至第一接点721和同时接至第二接点722的连线731。这些元件由有机物盖151罩住,该盖151用作连线731、绕接点和电路711的环境保护物。衬底141具有冲出的舌片781、782、783和784,它们用于在制造时将连线731挂住。
应注意本公开中的射频特征片的最佳实施例是无源的,也即在衬底141上没有电池。然而如图7所示,另一种实施例是一个有源特征片,其中电池791在接点723、724处接至半导体711,以便向半导体111提供板电源。
图8是新型射频特征片800的顶视图,该特征片800包括衬底141和带有接点810和815的半导体芯片811。连线821、823和824接至接点810。连线825、826和827接至接点815。这些元件由有机物盖151罩住,该盖用作连线821、823、824、825、826和827、绕接点和电路811的环境保护物。
图9是新型射频特征片900的顶视图,该特征片900包括衬底141、两块带有接点915和916(917和918)的半导体芯片910(和911)。连线970(和980)接至接点915和916(917和918)。连线970从接点915接出,绕过冲出的舌片930和940接至衬底141的接点916。连线980从接点917接出,绕过冲出的舌片960和950接至衬底141的接点918。这些元件由有机物盖951罩住,该盖951用作连线970和980、绕接点和电路910和911和环境保护物。
图10是新型射频特征片1000的图,该特征片1000包括衬底141、带有接点1021和1022的半导体芯片1011。连线1031由绕接点1021A接至接点1021,绕过销柱1091和1092,再由绕接点1022A接至接点1022。这些元件由有机物盖1051罩住,该盖1051用作连线1031、绕接点和电路1011的环境保护物。衬底上的销柱用于在连线1031弯成环时将连线在两端挂住,以便在制造时将连线定位。制造销柱时可使用加热模或冲模将衬底的一部分按照模子形状加以变形,使销柱(1091,1092)在衬底面上突出来。这种技术和其他类似技术是普通技术,例如用于在塑料信用卡上产生凸字符的凸模技术。还可以将预先成形的零件附加到衬底上来制造销柱。一种好的附加零件是模塑料。
在一个更好的实施例中,销柱1091和1092使用工具制成,后者将衬底141顺着锐角变形,该锐角在衬底上背向芯片1011。这样做在加盖1051前,连线1031不会从销柱1091和1092滑开。在另一个最佳实施例中,销柱1091和1092的顶端直径比底端大(即最靠近衬底上平面的部分)。对销柱顶端加压使顶端扩张就能做到值点。
很明显,了解此公开的熟悉技术的人能够在本发明者的设想范围内开发类似的实施例。
Claims (28)
1.一种射频特征标记装置,包括:
a.一个具有逻辑电路和存储器的半导体,该半导体安装在一块衬底上;
b.半导体上的第一和第二接点,第一和第二接点间有一个阻抗,该阻抗由逻辑电路加以改变从而将射频信号进行调制,该射频信号具有一个频率;
c.第一连线具有一个连接端和一个不连线的开放端,该连接端使用绕线连接法接至第一接点;
d.第二连线具有一个连接端和一个不连线的开放端,该连接端使用绕线连接法接至第二接点;以及
e.罩住半导体,第一和第二接点和第一和第二连线的有机物盖;
其中第一和第二连线组成一个天线,后者发送或反射射频信号以及第一和第二连线长度由频率决定。
2.权利要求1的射频特征片,其特征在于第一和第二连线的长度相等和每个长度是频率的四分之一波长。
3.权利要求1的射频特征片,其特征在于该半导体具有不止一对第一和第二接点以及不止一对第一和第二连线分别接至第一和第二接点,每一对第一和第二连线组成一个天线。
4.权利要求3的射频特征片,其特征在于第一对连线在第一频率共振和第二对连线在第二频率共振。
5.权利要求3的射频特征片,其特征在于至少一对第一和第二连线不平行于至少一对第二对第一和第二连线。
6.权利要求1的射频特征片,其特征在于不止一根第一连线接至第一接点和不止一根第二连线接至第二接点。
7.权利要求1的射频特征片,其特征在于第一和第二连线的直径在25至250微米间。
8.权利要求7的射频特征片,其特征在于第一和第二连线由下列任何一种材料制成:铝合金、覆金铜、金、金合金、铜和铜合金。
9.权利要求1的射频特征片,其特征在于第一和第二连线的长度在10至1000毫米间。
10.权利要求1的射频特征片,其特征在于天线共振于该频率。
11.权利要求1的射频特征片,其特征在于它在衬底和盖之间具有粘合剂,该粘合剂牢固地将连线、衬底和盖粘合在一起。
12.权利要求11的射频特征片,其特征在于该粘合剂是下列共聚合物之一:乙基·乙烯基乙酸环氧树脂、硅氧烷、和酚丁醛。
13.一种射频特征标记装置包括:
a.一个具有逻辑电路和存储器的半导体,该半导体安装在一块衬底上;
b.该半导体上的第一和第二接点,在第一和第二接点之间具有阻抗,该阻抗由逻辑电路加以改变从而将射频信号加以调制,该射频信号具有一个频率;
c.一根具有第一连接端和第二连接端的连线,其第一连接端用绕线连接法接至第一接点,和其第二连接端用绕线连接法接至第二接点;以及
d.一个罩住半导体、第一和第二接点和连线的有机物盖,
其中连线长度形成天线,该天线发送或反射射频信号,和连线长度决定于该频率。
14.权利要求13的射频特征片,其特征在于连线总长度使该天线共振于该频率。
15.权利要求13的射频特征片,其特征在于该半导体具有不止一对第一和第二接点和有一根连线分别将半导体的每对第一和第二接点连接起来。
16.权利要求15的射频特征片,其特征在于第一连线共振于第一频率和第二连线共振于第二频率。
17.权利要求13的射频特征片,其特征在于连线直径在25至250微米间。
18.权利要求17的射频特征片,其特征在于连线由下列任何一种材料制成:金、铜、覆金铜、铝合金、铜合金和金合金。
19.权利要求13的射频特征片,其特征在于连线长度在10至1000毫米间。
20.权利要求13的射频特征片,其特征在于连线用一或多个舌片固定在衬底上。
21.权利要求13的射频特征片,其特征在于连线围绕一个或多个销柱弯成环状。
22.一种射频特征标记装置包括:
a.两个或更多个各具有逻辑电路和存储器的半导体,这些半导体安装在单一衬底上;
b.每个半导体上各有第一和第二接点,在第一和第二接点间具有阻抗,该阻抗由逻辑电路改变从而将射频信号加以调制,该射频信号具有一个频率;
c.第一连线具有一个连接端和一个不连线的开放端,该连接端用绕线连接法接至第一接点;
d.第二连线具有一个连接端和一个不连线的开放端,该连接端用绕线连接法接至第二接点;以及
e.一个罩住半导体、第一和第二接点和第一和第二连线的有机物盖,
其中第一和第二连线的长度形成一个天线,该天线发送或反射射频线号以及第一和第二连线的长度决定于频率。
23.权利要求22的射频特征片,其特征在于不止一根第一连线接至第一接点和不止一根第二连线接至第二接点。
24.权利要求22的射频特征片,其特征在于第一和第二连线由一根环状线所替代,该环状线的第一端连至第一接点和第二端连至第二接点。
25.权利要求1的射频特征片,其特征在于该半导体具有第一和第二电池接点,这些接点接至用作半导体电源的电池。
26.权利要求1的射频特征片,其特征在于该半导体由一种封装物所罩住。
27.权利要求26的射频特征片,其特征在于该封装物是不透明的。
28.权利要求13的射频特征片,其特征在于该半导体具有接至用作半导体电源的电池的第一和第二电池接点。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/303,976 US5682143A (en) | 1994-09-09 | 1994-09-09 | Radio frequency identification tag |
US303,976 | 1994-09-09 |
Publications (2)
Publication Number | Publication Date |
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CN1118880A true CN1118880A (zh) | 1996-03-20 |
CN1053967C CN1053967C (zh) | 2000-06-28 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN95104773A Expired - Fee Related CN1053967C (zh) | 1994-09-09 | 1995-04-25 | 射频识别特征片 |
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US (3) | US5682143A (zh) |
EP (1) | EP0779994A1 (zh) |
JP (1) | JPH0888581A (zh) |
KR (1) | KR0170560B1 (zh) |
CN (1) | CN1053967C (zh) |
CA (1) | CA2153440A1 (zh) |
HU (1) | HUT76997A (zh) |
PL (1) | PL318978A1 (zh) |
TW (1) | TW276322B (zh) |
WO (1) | WO1996007938A1 (zh) |
ZA (1) | ZA957079B (zh) |
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- 1995-08-08 PL PL95318978A patent/PL318978A1/xx unknown
- 1995-08-08 HU HU9700404A patent/HUT76997A/hu unknown
- 1995-08-23 ZA ZA957079A patent/ZA957079B/xx unknown
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Cited By (7)
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CN1331091C (zh) * | 1998-12-17 | 2007-08-08 | 株式会社日立制作所 | 半导体装置及其制造方法 |
CN101267727B (zh) * | 2002-11-11 | 2015-01-07 | 富士机械制造株式会社 | 零部件供应带连接构件、连接构件供应装置和零部件信息赋予方法 |
CN103430054A (zh) * | 2010-11-10 | 2013-12-04 | Ryb公司 | 包括识别传感器的聚合物管及其制造方法 |
CN103430054B (zh) * | 2010-11-10 | 2016-10-19 | Ryb公司 | 包括识别传感器的聚合物管及其制造方法 |
CN107907871A (zh) * | 2017-12-28 | 2018-04-13 | 成都嘉泰华力科技有限责任公司 | 一种多通道信号功率检测设备 |
CN109084916A (zh) * | 2018-09-27 | 2018-12-25 | 海伯森技术(深圳)有限公司 | 一种多维力传感器中应变片的固定装置、方法及传感器 |
CN109084916B (zh) * | 2018-09-27 | 2023-08-22 | 海伯森技术(深圳)有限公司 | 一种多维力传感器中应变片的固定装置、方法及传感器 |
Also Published As
Publication number | Publication date |
---|---|
KR960012619A (ko) | 1996-04-20 |
US6078259A (en) | 2000-06-20 |
WO1996007938A1 (en) | 1996-03-14 |
EP0779994A1 (en) | 1997-06-25 |
ZA957079B (en) | 1996-03-11 |
HUT76997A (hu) | 1998-01-28 |
CN1053967C (zh) | 2000-06-28 |
US5972156A (en) | 1999-10-26 |
TW276322B (zh) | 1996-05-21 |
JPH0888581A (ja) | 1996-04-02 |
US5682143A (en) | 1997-10-28 |
KR0170560B1 (ko) | 1999-03-30 |
CA2153440A1 (en) | 1996-03-10 |
PL318978A1 (en) | 1997-07-21 |
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