CN105743357A - High-frequency ultrasonic wave driver - Google Patents
High-frequency ultrasonic wave driver Download PDFInfo
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- CN105743357A CN105743357A CN201610257568.0A CN201610257568A CN105743357A CN 105743357 A CN105743357 A CN 105743357A CN 201610257568 A CN201610257568 A CN 201610257568A CN 105743357 A CN105743357 A CN 105743357A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
Abstract
The invention relates to a high-frequency ultrasonic wave driver. The high-frequency ultrasonic wave driver comprises a signal processing module, wherein the output end of the signal processing module is connected with the input end of a grid driving module, the output end of the grid driving module is connected with the input end of a push-pull driving module, the output end of the push-pull driving module is connected with the input end of an ultrasonic transducer, a detection end of an overcurrent protection module is connected with the output end of the push-pull driving module, the output end of the overcurrent protection module is connected with the input end of the signal processing module, and an electrical module is electrically connected to the signal processing module, the grid driving module, the push-pull driving module, the ultrasonic transducer and the overcurrent protection module separately. By the high-frequency ultrasonic wave driver, the grid driving current is increased, the switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) can be substantially increased, and the high-frequency ultrasonic wave driver has the advantages of small size, high frequency, high efficiency and the like.
Description
Technical field
The invention belongs to technical field of medical equipment, particularly relate to a kind of high-frequency ultrasonic driver for ultrasonic therapeutic apparatus.
Background technology
Ultrasonic drive effect is civil power to be converted to the high-frequency ac signal of telecommunication matched with ultrasonic transducer, drives ultrasonic transducer work.Traditional driver all adopts self-oscillation or bridge switching circuit to drive high power low-frequency ultrasonic transducer, between the basic 20KHz ~ 120kHz of frequency, is used in the fields such as detection, cleaning more.
Existing ultrasonic drive circuit structure is complicated, and operating frequency is between 20KHz ~ 120KHz, far below the frequency band (0.8MHz ~ 15MHz) that ultrasonic therapeutic apparatus uses.Volume is bigger simultaneously, it is impossible to meet ultrasonic therapeutic apparatus Miniaturization Design target.
Summary of the invention
It is an object of the invention to provide a kind of high-frequency ultrasonic driver, it is intended to solve above-mentioned technical problem.
The present invention is realized in, a kind of high-frequency ultrasonic driver, described high-frequency ultrasonic driver includes signal processing module, grid electrode drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module and supply module, the outfan of described signal processing module connects the input of grid electrode drive module, the outfan of described grid electrode drive module connects the input of described push-pull drive module, the outfan of described push-pull drive module connects the input of described ultrasonic transducer, the test side of described overcurrent protection module connects the outfan of described push-pull drive module, the outfan of described overcurrent protection module connects described signal processing module, described supply module is electrically connected with described signal processing module, grid electrode drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module.
The further technical scheme of the present invention is: described overcurrent protection module drives size of current by resistance detection, and compares with preset value and exceed preset value and then close immediately and drive output.
The further technical scheme of the present invention is: this high-frequency ultrasonic driver also includes central processing unit (MCU), the outfan of described central processing unit connects the input of described signal processing module, and described supply module is electrically connected described central processing unit (MCU).
nullThe further technical scheme of the present invention is: described signal processing module includes operational amplifier U6A、Operational amplifier U9A、Resistance R7、Resistance R9、Chip U4B、Electric capacity C16、Nor gate U5A、Nor gate U5B and NAND gate U8A，7th foot of described operational amplifier U6A connects one end of described resistance R7 and the outfan ClkA of central processing unit respectively，8th foot of described operational amplifier U6A connects the other end of described resistance R7 and the outfan ClkB of central processing unit respectively，2nd foot of described operational amplifier U6A connects the 11st foot of described chip U4B，14th foot of described chip U4B connects power supply VCC1 respectively、One end of electric capacity C16 and the 10th of chip U4B the、14 feet，9th foot of described chip U4B connects the 1st foot of described nor gate U5A，The 8th of described chip U4B、12 feet connect the 6th foot of described nor gate U5B，7th foot of described operational amplifier U9A connects one end of described resistance R9 and the outfan Ctr_B of central processing unit respectively，8th foot of described operational amplifier U9A connects the other end of described resistance R9 and the outfan Ctr_A of central processing unit respectively，2nd foot of described operational amplifier U9A connects the 2nd foot of described NAND gate U8A，3rd foot of described NAND gate U8A connects the 2nd foot of described nor gate U5A and the 7th foot of nor gate U5B respectively，4th foot of described nor gate U5A、The other end of electric capacity C16、7th foot of chip U4B、4th foot of operational amplifier U6A and the 7th equal ground connection of foot of NAND gate U8A，1st foot of described operational amplifier U6A、8th foot of nor gate U5A and the 14th foot of NAND gate U8A are all connected with power supply VCC1.
The further technical scheme of the present invention is: described grid electrode drive module includes resistance R6, resistance R8, chip U2, chip U3, resistance R3 and resistance R5, the 2nd of described chip U2, 5 feet connect one end of described resistance R6 and the 3rd foot of nor gate U5A respectively, the 4th of described chip U2, 6 feet connect one end of described resistance R3 respectively, the 2nd of described chip U3, 5 feet connect one end of described resistance R8 and the 5th foot of nor gate U5B respectively, the 4th of described chip U3, 6 feet connect one end of described resistance R5 respectively, 1st foot of described chip U2, 1st foot of chip U3, the other end of resistance R6 and the other end of resistance R8 are all connected with power supply VCC2, 3rd foot of described chip U2 and the 3rd equal ground connection of foot of chip U3.
nullThe further technical scheme of the present invention is: described push-pull drive module includes metal-oxide-semiconductor Q1、Metal-oxide-semiconductor Q2、Electric capacity C17、Electric capacity C19、Electric capacity C18、Transformator T1 and crystal oscillator Y1，The grid of described metal-oxide-semiconductor Q1 connects the other end of described resistance R3，The drain electrode of described metal-oxide-semiconductor Q1 connects one end of described electric capacity C17 and input the 1st foot of transformator T1 respectively，The source electrode of described metal-oxide-semiconductor Q1 connects the other end of described electric capacity C17 respectively、One end of electric capacity C19 and the source electrode of metal-oxide-semiconductor Q2，The grid of described metal-oxide-semiconductor Q2 connects the other end of described resistance R5，The drain electrode of described metal-oxide-semiconductor Q2 connects the other end of described electric capacity C19 and input the 2nd foot of transformator T1 respectively，Output the 1st foot of described transformator T1 connects one end of described electric capacity C18 respectively、One end of crystal oscillator Y1 and output，Output the 2nd foot of described transformator T1 connects the other end of described electric capacity C18 respectively、The other end of crystal oscillator Y1 and output.
nullThe further technical scheme of the present invention is: described overcurrent protection module includes resistance R18、Resistance R19、Resistance R13、Resistance R16、Electric capacity C35、Resistance R21、Rheostat RP1、Operational amplifier U10B、Resistance R14、Resistance R11、Electric capacity C39、Zener diode D4、Operational amplifier U10A、Resistance R20、Resistance R15、Resistance R10、Chip U4A and driver DRV，One end of described resistance R13 connects one end of described resistance R18 respectively、One end of resistance R19、The other end of electric capacity C17、The other end of electric capacity C19、The source electrode of metal-oxide-semiconductor Q1 and the source electrode of metal-oxide-semiconductor Q2，The other end of described resistance R13 connects one end of described resistance R16 respectively、One end of electric capacity C35 and the positive input of operational amplifier U10B，The negative input of described operational amplifier U10B connects the sliding end of described rheostat RP1，One end of described rheostat RP1 connects power supply VCC1 through described resistance R21，The outfan of described operational amplifier U10B connects one end of described resistance R14，The other end of described resistance R14 connects one end of described electric capacity C39 and the positive input of operational amplifier U10A respectively，The negative input of described operational amplifier U10A connects the negative electrode of Zener diode D4 and one end of resistance R11 respectively，The outfan of described operational amplifier U10A connects one end of described resistance R20 and one end of resistance R15 respectively，The other end of described resistance R15 connects the 3rd foot of described chip U4A，6th foot of described chip U4A connects the 1st foot of described NAND gate U8A and the input of driver DRV respectively，2nd foot of described chip U4A connects power supply VCC1 through described resistance R10，The other end of described operational amplifier U10A the 8th foot and resistance R11 is all connected with power supply VCC1，The other end of described resistance R20、4th foot of operational amplifier U10A、The anode of Zener diode D4、The other end of electric capacity C39、The other end of rheostat RP1、The other end of resistance R16、The other end of electric capacity C35、The other end of resistance R18 and the equal ground connection of the other end of resistance R19.
The further technical scheme of the present invention is: the switching frequency of described metal-oxide-semiconductor Q1, Q2 is 0.8MHz-15MHz.
The further technical scheme of the present invention is: the transmission delay of described grid electrode drive module is lower than 2ns.
The further technical scheme of the present invention is: the maximum drive current of described metal-oxide-semiconductor Q1, Q2 is 9A.
The invention has the beneficial effects as follows: increase gate drive current, it is possible to increase substantially switch mosfet speed, have that volume is little, frequency is high, efficiency advantages of higher.Adopt into the very little MOSFET of electric capacity, use the gate drivers that switching speed is very fast simultaneously, use pcrmeability be the nickel zinc magnet ring of 10 to make final stage impedance-matching transformer, operating frequency range 0.8MHz ~ 15MHz, the output 0 ~ 30W of ultrasonic drivers.This high-frequency ultrasonic driver integrated level is high, and volume is very little, can be convenient for assembly in movable type and portable set.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of the high-frequency ultrasonic driver that the embodiment of the present invention provides.
Fig. 2 is the electrical schematic diagram of the high-frequency ultrasonic driver that the embodiment of the present invention provides.
Detailed description of the invention
Such as Fig. 1, shown in 2, high-frequency ultrasonic driver provided by the invention, described high-frequency ultrasonic driver includes signal processing module, grid electrode drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module and supply module, the outfan of described signal processing module connects the input of grid electrode drive module, the outfan of described grid electrode drive module connects the input of described push-pull drive module, the outfan of described push-pull drive module connects the input of described ultrasonic transducer, the test side of described overcurrent protection module connects the outfan of described push-pull drive module, the outfan of described overcurrent protection module connects described signal processing module, described supply module is electrically connected with described signal processing module, grid electrode drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module.Increase gate drive current, it is possible to increase substantially switch mosfet speed, have that volume is little, frequency is high, efficiency advantages of higher.Adopt into the very little MOSFET of electric capacity, use the gate drivers that switching speed is very fast simultaneously, use pcrmeability be the nickel zinc magnet ring of 10 to make final stage impedance-matching transformer, operating frequency range 0.8MHz ~ 15MHz, the output 0 ~ 30W of ultrasonic drivers.This high-frequency ultrasonic driver integrated level is high, and volume is very little, can be convenient for assembly in movable type and portable set.
Described overcurrent protection module drives size of current by resistance detection, and compares with preset value and exceed preset value and then close immediately and drive output.
This high-frequency ultrasonic driver also includes central processing unit (MCU), and the outfan of described central processing unit connects the input of described signal processing module, and described supply module is electrically connected described central processing unit (MCU).
nullDescribed signal processing module includes operational amplifier U6A、Operational amplifier U9A、Resistance R7、Resistance R9、Chip U4B、Electric capacity C16、Nor gate U5A、Nor gate U5B and NAND gate U8A，7th foot of described operational amplifier U6A connects one end of described resistance R7 and the outfan ClkA of central processing unit respectively，8th foot of described operational amplifier U6A connects the other end of described resistance R7 and the outfan ClkB of central processing unit respectively，2nd foot of described operational amplifier U6A connects the 11st foot of described chip U4B，14th foot of described chip U4B connects power supply VCC1 respectively、One end of electric capacity C16 and the 10th of chip U4B the、14 feet，9th foot of described chip U4B connects the 1st foot of described nor gate U5A，The 8th of described chip U4B、12 feet connect the 6th foot of described nor gate U5B，7th foot of described operational amplifier U9A connects one end of described resistance R9 and the outfan Ctr_B of central processing unit respectively，8th foot of described operational amplifier U9A connects the other end of described resistance R9 and the outfan Ctr_A of central processing unit respectively，2nd foot of described operational amplifier U9A connects the 2nd foot of described NAND gate U8A，3rd foot of described NAND gate U8A connects the 2nd foot of described nor gate U5A and the 7th foot of nor gate U5B respectively，4th foot of described nor gate U5A、The other end of electric capacity C16、7th foot of chip U4B、4th foot of operational amplifier U6A and the 7th equal ground connection of foot of NAND gate U8A，1st foot of described operational amplifier U6A、8th foot of nor gate U5A and the 14th foot of NAND gate U8A are all connected with power supply VCC1.
Described grid electrode drive module includes resistance R6, resistance R8, chip U2, chip U3, resistance R3 and resistance R5, the 2nd of described chip U2, 5 feet connect one end of described resistance R6 and the 3rd foot of nor gate U5A respectively, the 4th of described chip U2, 6 feet connect one end of described resistance R3 respectively, the 2nd of described chip U3, 5 feet connect one end of described resistance R8 and the 5th foot of nor gate U5B respectively, the 4th of described chip U3, 6 feet connect one end of described resistance R5 respectively, 1st foot of described chip U2, 1st foot of chip U3, the other end of resistance R6 and the other end of resistance R8 are all connected with power supply VCC2, 3rd foot of described chip U2 and the 3rd equal ground connection of foot of chip U3.
nullDescribed push-pull drive module includes metal-oxide-semiconductor Q1、Metal-oxide-semiconductor Q2、Electric capacity C17、Electric capacity C19、Electric capacity C18、Transformator T1 and crystal oscillator Y1，The grid of described metal-oxide-semiconductor Q1 connects the other end of described resistance R3，The drain electrode of described metal-oxide-semiconductor Q1 connects one end of described electric capacity C17 and input the 1st foot of transformator T1 respectively，The source electrode of described metal-oxide-semiconductor Q1 connects the other end of described electric capacity C17 respectively、One end of electric capacity C19 and the source electrode of metal-oxide-semiconductor Q2，The grid of described metal-oxide-semiconductor Q2 connects the other end of described resistance R5，The drain electrode of described metal-oxide-semiconductor Q2 connects the other end of described electric capacity C19 and input the 2nd foot of transformator T1 respectively，Output the 1st foot of described transformator T1 connects one end of described electric capacity C18 respectively、One end of crystal oscillator Y1 and output，Output the 2nd foot of described transformator T1 connects the other end of described electric capacity C18 respectively、The other end of crystal oscillator Y1 and output.
nullDescribed overcurrent protection module includes resistance R18、Resistance R19、Resistance R13、Resistance R16、Electric capacity C35、Resistance R21、Rheostat RP1、Operational amplifier U10B、Resistance R14、Resistance R11、Electric capacity C39、Zener diode D4、Operational amplifier U10A、Resistance R20、Resistance R15、Resistance R10、Chip U4A and driver DRV，One end of described resistance R13 connects one end of described resistance R18 respectively、One end of resistance R19、The other end of electric capacity C17、The other end of electric capacity C19、The source electrode of metal-oxide-semiconductor Q1 and the source electrode of metal-oxide-semiconductor Q2，The other end of described resistance R13 connects one end of described resistance R16 respectively、One end of electric capacity C35 and the positive input of operational amplifier U10B，The negative input of described operational amplifier U10B connects the sliding end of described rheostat RP1，One end of described rheostat RP1 connects power supply VCC1 through described resistance R21，The outfan of described operational amplifier U10B connects one end of described resistance R14，The other end of described resistance R14 connects one end of described electric capacity C39 and the positive input of operational amplifier U10A respectively，The negative input of described operational amplifier U10A connects the negative electrode of Zener diode D4 and one end of resistance R11 respectively，The outfan of described operational amplifier U10A connects one end of described resistance R20 and one end of resistance R15 respectively，The other end of described resistance R15 connects the 3rd foot of described chip U4A，6th foot of described chip U4A connects the 1st foot of described NAND gate U8A and the input of driver DRV respectively，2nd foot of described chip U4A connects power supply VCC1 through described resistance R10，The other end of described operational amplifier U10A the 8th foot and resistance R11 is all connected with power supply VCC1，The other end of described resistance R20、4th foot of operational amplifier U10A、The anode of Zener diode D4、The other end of electric capacity C39、The other end of rheostat RP1、The other end of resistance R16、The other end of electric capacity C35、The other end of resistance R18 and the equal ground connection of the other end of resistance R19.
The switching frequency of described metal-oxide-semiconductor Q1, Q2 is 0.8MHz-15MHz.
The transmission delay of described grid electrode drive module is lower than 2ns.
The maximum drive current of described metal-oxide-semiconductor Q1, Q2 is 9A.
Chip U4B is identical with chip U4A, and its model is 74LS74.
Chip U2 is identical with chip U3, and its model is ZXGD3002E6.
U10A and U10B is identical, and its model is AD8034AR.
The present invention devises a kind of high-frequency ultrasonic driver being available for ultrasonic therapeutic apparatus use; this driver adopts push pull configeration; circuit block diagram is shown in accompanying drawing 1, including signal processing module, grid electrode drive module, push-pull drive module, overcurrent protection module, supply module.Described supply module respectively with signal processing module, grid electrode drive module, push-pull drive module, overcurrent protection module be connected.Signal processing module receives the differential signal that signal source produces, and decides whether to send enable signal to grid electrode drive module.Grid electrode drive module is responsible for driving MOFET grid, it is provided that big input current, peak point current is up to 9A, and transmission delay is low to moderate 2ns.Push-pull drive module is responsible for driving ultrasonic transducer, produces required ultrasound wave.This part passes through homemade nickel zinc magnetic ring transformer, as impedance matching, makes drive efficiency reach maximum.Overcurrent protection part adopts resistance detection to drive size of current, compares with limits value simultaneously, if beyond limits value, closedown is exported immediately, thus preventing dangerous generation.
As shown in Figure 2, for the schematic diagram of this driver.Signal processing module, U6 and U9 is responsible for processing the differential signal communicated with MCU, and the signal of frequency multiplication carries out 2 frequency dividings, the operating frequency needed for output ultrasonic transducer simultaneously.And it is supplied to rear and raster data model part.Grid electrode drive module, U2 and U3 provides big gate drive current, has very fast switching speed simultaneously, and transmission delay is low to moderate 2ns.By adjusting the resistance of R6 and R8, in that case it can be decided that the size of gate drive current, select suitable gate drive current that system effectiveness can be made the highest.Push-pull drive module, has very little input capacitance including Q1 and Q2, thus ensure that switching frequency is used for suppressing the induction electromotive force of transformator up to 15MHz, C17 and C19, protection Q1 and Q2 is not reversed and punctures.Overcurrent protection module, R18 and R19 is sampling resistor, and current value is converted to magnitude of voltage; compared by comparator simultaneously, when system power is beyond preset value, a rising edge pulse signal can be produced; this signal will feed back to signal processing module, thus output being closed.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent replacement and improvement etc. made within the spirit and principles in the present invention, should be included within protection scope of the present invention.
Claims (10)
1. a high-frequency ultrasonic driver, it is characterized in that, described high-frequency ultrasonic driver includes signal processing module, grid electrode drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module and supply module, the outfan of described signal processing module connects the input of grid electrode drive module, the outfan of described grid electrode drive module connects the input of described push-pull drive module, the outfan of described push-pull drive module connects the input of described ultrasonic transducer, the test side of described overcurrent protection module connects the outfan of described push-pull drive module, the outfan of described overcurrent protection module connects described signal processing module, described supply module is electrically connected with described signal processing module, grid electrode drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module.
2. high-frequency ultrasonic driver according to claim 1, it is characterised in that described overcurrent protection module drives size of current by resistance detection, and compare with preset value and exceed preset value and then close immediately and drive output.
3. high-frequency ultrasonic driver according to claim 1 and 2, it is characterized in that, this high-frequency ultrasonic driver also includes central processing unit (MCU), the outfan of described central processing unit connects the input of described signal processing module, and described supply module is electrically connected described central processing unit (MCU).
null4. high-frequency ultrasonic driver according to claim 3，It is characterized in that，Described signal processing module includes operational amplifier U6A、Operational amplifier U9A、Resistance R7、Resistance R9、Chip U4B、Electric capacity C16、Nor gate U5A、Nor gate U5B and NAND gate U8A，7th foot of described operational amplifier U6A connects one end of described resistance R7 and the outfan ClkA of central processing unit respectively，8th foot of described operational amplifier U6A connects the other end of described resistance R7 and the outfan ClkB of central processing unit respectively，2nd foot of described operational amplifier U6A connects the 11st foot of described chip U4B，14th foot of described chip U4B connects power supply VCC1 respectively、One end of electric capacity C16 and the 10th of chip U4B the、14 feet，9th foot of described chip U4B connects the 1st foot of described nor gate U5A，The 8th of described chip U4B、12 feet connect the 6th foot of described nor gate U5B，7th foot of described operational amplifier U9A connects one end of described resistance R9 and the outfan Ctr_B of central processing unit respectively，8th foot of described operational amplifier U9A connects the other end of described resistance R9 and the outfan Ctr_A of central processing unit respectively，2nd foot of described operational amplifier U9A connects the 2nd foot of described NAND gate U8A，3rd foot of described NAND gate U8A connects the 2nd foot of described nor gate U5A and the 7th foot of nor gate U5B respectively，4th foot of described nor gate U5A、The other end of electric capacity C16、7th foot of chip U4B、4th foot of operational amplifier U6A and the 7th equal ground connection of foot of NAND gate U8A，1st foot of described operational amplifier U6A、8th foot of nor gate U5A and the 14th foot of NAND gate U8A are all connected with power supply VCC1.
null5. high-frequency ultrasonic driver according to claim 4，It is characterized in that，Described grid electrode drive module includes resistance R6、Resistance R8、Chip U2、Chip U3、Resistance R3 and resistance R5，The 2nd of described chip U2、5 feet connect one end of described resistance R6 and the 3rd foot of nor gate U5A respectively，The 4th of described chip U2、6 feet connect one end of described resistance R3 respectively，The 2nd of described chip U3、5 feet connect one end of described resistance R8 and the 5th foot of nor gate U5B respectively，The 4th of described chip U3、6 feet connect one end of described resistance R5 respectively，1st foot of described chip U2、1st foot of chip U3、The other end of resistance R6 and the other end of resistance R8 are all connected with power supply VCC2，3rd foot of described chip U2 and the 3rd equal ground connection of foot of chip U3.
null6. high-frequency ultrasonic driver according to claim 5，It is characterized in that，Described push-pull drive module includes metal-oxide-semiconductor Q1、Metal-oxide-semiconductor Q2、Electric capacity C17、Electric capacity C19、Electric capacity C18、Transformator T1 and crystal oscillator Y1，The grid of described metal-oxide-semiconductor Q1 connects the other end of described resistance R3，The drain electrode of described metal-oxide-semiconductor Q1 connects one end of described electric capacity C17 and input the 1st foot of transformator T1 respectively，The source electrode of described metal-oxide-semiconductor Q1 connects the other end of described electric capacity C17 respectively、One end of electric capacity C19 and the source electrode of metal-oxide-semiconductor Q2，The grid of described metal-oxide-semiconductor Q2 connects the other end of described resistance R5，The drain electrode of described metal-oxide-semiconductor Q2 connects the other end of described electric capacity C19 and input the 2nd foot of transformator T1 respectively，Output the 1st foot of described transformator T1 connects one end of described electric capacity C18 respectively、One end of crystal oscillator Y1 and output，Output the 2nd foot of described transformator T1 connects the other end of described electric capacity C18 respectively、The other end of crystal oscillator Y1 and output.
null7. high-frequency ultrasonic driver according to claim 6，It is characterized in that，Described overcurrent protection module includes resistance R18、Resistance R19、Resistance R13、Resistance R16、Electric capacity C35、Resistance R21、Rheostat RP1、Operational amplifier U10B、Resistance R14、Resistance R11、Electric capacity C39、Zener diode D4、Operational amplifier U10A、Resistance R20、Resistance R15、Resistance R10、Chip U4A and driver DRV，One end of described resistance R13 connects one end of described resistance R18 respectively、One end of resistance R19、The other end of electric capacity C17、The other end of electric capacity C19、The source electrode of metal-oxide-semiconductor Q1 and the source electrode of metal-oxide-semiconductor Q2，The other end of described resistance R13 connects one end of described resistance R16 respectively、One end of electric capacity C35 and the positive input of operational amplifier U10B，The negative input of described operational amplifier U10B connects the sliding end of described rheostat RP1，One end of described rheostat RP1 connects power supply VCC1 through described resistance R21，The outfan of described operational amplifier U10B connects one end of described resistance R14，The other end of described resistance R14 connects one end of described electric capacity C39 and the positive input of operational amplifier U10A respectively，The negative input of described operational amplifier U10A connects the negative electrode of Zener diode D4 and one end of resistance R11 respectively，The outfan of described operational amplifier U10A connects one end of described resistance R20 and one end of resistance R15 respectively，The other end of described resistance R15 connects the 3rd foot of described chip U4A，6th foot of described chip U4A connects the 1st foot of described NAND gate U8A and the input of driver DRV respectively，2nd foot of described chip U4A connects power supply VCC1 through described resistance R10，The other end of described operational amplifier U10A the 8th foot and resistance R11 is all connected with power supply VCC1，The other end of described resistance R20、4th foot of operational amplifier U10A、The anode of Zener diode D4、The other end of electric capacity C39、The other end of rheostat RP1、The other end of resistance R16、The other end of electric capacity C35、The other end of resistance R18 and the equal ground connection of the other end of resistance R19.
8. high-frequency ultrasonic driver according to claim 7, it is characterised in that the switching frequency of described metal-oxide-semiconductor Q1, Q2 is 0.8MHz-15MHz.
9. high-frequency ultrasonic driver according to claim 8, it is characterised in that the transmission delay of described grid electrode drive module is lower than 2ns.
10. high-frequency ultrasonic driver according to claim 9, it is characterised in that the maximum drive current of described metal-oxide-semiconductor Q1, Q2 is 9A.
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| CN116667275A (en) * | 2023-07-28 | 2023-08-29 | 深圳洁盟技术股份有限公司 | Intelligent matrix type medical cleaning system equipment overcurrent protection system |
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| CN105743357B (en) | 2018-10-23 |
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