CN104578032A - Over-voltage protector - Google Patents
Over-voltage protector Download PDFInfo
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- CN104578032A CN104578032A CN201410811873.0A CN201410811873A CN104578032A CN 104578032 A CN104578032 A CN 104578032A CN 201410811873 A CN201410811873 A CN 201410811873A CN 104578032 A CN104578032 A CN 104578032A
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Abstract
The invention discloses an over-voltage protector which comprises a semiconductor switching circuit and a trigger circuit; the first end of the semiconductor switching circuit is connected with the first end of a protected device; the second end of the semiconductor switching circuit is connected with the second end of the protected device, and is used for controlling the opening and closing of the over-voltage protector; the trigger circuit is connected with a control terminal of the semiconductor switching circuit, and is used for triggering the semiconductor switching circuit. Through the over-voltage circuit, the problem that in the prior art, a clamp voltage provided by an over-voltage protector is too high to provide effective protection the protected device or circuit is solved, and the effective and safe protection of the protected device is realized.
Description
Technical field
The present invention relates to power domain, in particular to a kind of overvoltage protection device.
Background technology
Now, in electrical design, widely use the overvoltage protection device based on pressure sensitive technology, by its protection equipment below or circuit.But there is following problem in existing technology: the minimum clamp voltage that overvoltage protection device can provide is 2 times of protected equipment operating voltage, and protected equipment often needs lower clamp voltage, 1.5 times of such as its operating voltage or 1.3 times, the clamp voltage that the protected equipment requirement overvoltage protection device even had provides is not higher than its operating voltage, this just causes overvoltage protection device can not protect rear class equipment or circuit effectively, namely the defencive function of overvoltage protection device is also not activated and the protected equipment of rear class has damaged due to overtension, overvoltage protection device leakage current is excessive, absorbed power can cause self-heating, thus accelerate aging, so that can not bear surge impact repeatedly, overvoltage protection device can not disconnect in the event of a failure automatically, and easy short circuit causes fire.
The clamp voltage provided for overvoltage protection device of the prior art is too high and cannot provide the problem of available protecting to protected equipment or circuit, not yet proposes effective solution at present.
Summary of the invention
The clamp voltage provided for overvoltage protection device of the prior art is too high and cannot provide the problem of available protecting to protected equipment or circuit; at present effective solution is not yet proposed; for this reason; main purpose of the present invention is to provide a kind of overvoltage protection device, to solve the problem.
To achieve these goals, according to an aspect of the present invention, provide a kind of overvoltage protection device, the method comprises: semiconductor switch circuit, first end is connected with the first end of protected device, second end is connected with the second end of protected device, for controlling the opening and closing of overvoltage protection device; Circuits for triggering, are connected with the control end of semiconductor switch circuit, for triggered semiconductor switching circuit.
Further, semiconductor switch circuit comprises: the first thyristor and the second thyristor, wherein, the negative pole of the first thyristor is connected with the positive pole of the second thyristor, the positive pole of the first thyristor is connected with the negative pole of the second thyristor, and the gate pole of the first thyristor and the gate pole of the second thyristor are as the control end of semiconductor switch circuit; Circuits for triggering comprise: the first TVS pipe, and first end is connected with the gate pole of the first thyristor; First resistance, first end is connected with the second end of the first TVS pipe, and the second end is connected with the gate pole of the second thyristor.
Further, semiconductor switch circuit comprises: bidirectional thyristor, wherein, the first end of bidirectional thyristor is as the first end of semiconductor switch circuit, second end of bidirectional thyristor is as the second end of semiconductor switch circuit, and the control end of bidirectional thyristor is as the control end of semiconductor switch circuit; Circuits for triggering comprise: solid discharge device, and first end is connected with the first end of bidirectional thyristor, and the second end is connected with the control end of bidirectional thyristor.
Further, overvoltage protection device also comprises: voltage clamping circuit, and the second end of semiconductor switch circuit is connected with the second end of protected device by voltage clamping circuit, and voltage clamping circuit is for absorbing the surge current in overvoltage protection device.
Further, voltage clamping circuit comprises: the second TVS pipe, and first end is connected with the second end of semiconductor switch circuit, and the second end is connected with the second end of protected device.
Further, voltage clamping circuit comprises: piezo-resistance, and first end is connected with the second end of semiconductor switch circuit, and the second end is connected with the second end of protected device.
Further, overvoltage protection device comprises: fuse, and voltage clamping circuit is connected with the second end of protected device by fuse.
Further, overvoltage protection device also comprises: the second resistance, and first end is connected with the first end of semiconductor switch circuit, and the second end is connected with the second end of voltage clamping circuit.
Further; overvoltage protection device also comprises: light-emitting diode; light-emitting diode and the second resistance form series circuit, and the second resistance is connected with the second end of voltage clamping circuit by light-emitting diode, or the first end of semiconductor switch circuit is connected with the second resistance by light-emitting diode.
Further, overvoltage protection device also comprises: the first diode, and series circuit is connected with the second end of voltage clamping circuit by the first diode.
Adopt the present invention, use semiconductor switch circuit and circuits for triggering to combine as overvoltage protection device.Wherein, the semiconductor switch device of the use in semiconductor switch circuit significantly can reduce leakage current, and semiconductor switch device self can provide clamp voltage for protected equipment or circuit, for the protection of protected equipment or circuit simultaneously; Circuits for triggering are used for triggered semiconductor switching circuit, and the trigger voltage that circuits for triggering provide can adjust according to the actual requirements, and the electric current of circuits for triggering generation is simultaneously less, avoids the infringement to semiconductor switch circuit.By the present invention, solve clamp voltage that overvoltage protection device of the prior art provides too high and the problem of available protecting cannot be provided protected equipment or circuit, achieve to protected device effectively and the protection of safety.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, and form a application's part, schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the schematic diagram of an optional overvoltage protection device according to the embodiment of the present invention;
Fig. 2 is the schematic diagram of another the optional overvoltage protection device according to the embodiment of the present invention;
Fig. 3 is the schematic diagram of the 3rd the optional overvoltage protection device according to the embodiment of the present invention;
Fig. 4 is the schematic diagram of the 4th the optional overvoltage protection device according to the embodiment of the present invention;
Fig. 5 is the schematic diagram of the 5th the optional overvoltage protection device according to the embodiment of the present invention; And
Fig. 6 is the schematic diagram of the 6th the optional overvoltage protection device according to the embodiment of the present invention.
Embodiment
The present invention program is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the embodiment of a part of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
It should be noted that, term " first ", " second " etc. in specification of the present invention and claims and above-mentioned accompanying drawing are for distinguishing similar object, and need not be used for describing specific order or precedence.Should be appreciated that the data used like this can be exchanged in the appropriate case, so as embodiments of the invention described herein can with except here diagram or describe those except order implement.In addition, term " comprises " and " having " and their any distortion, intention is to cover not exclusive comprising, such as, contain those steps or unit that the process of series of steps or unit, method, system, product or equipment is not necessarily limited to clearly list, but can comprise clearly do not list or for intrinsic other step of these processes, method, product or equipment or unit.
Fig. 1 is the schematic diagram of an optional overvoltage protection device according to the embodiment of the present invention, and this overvoltage protection device can comprise as shown in Figure 1: semiconductor switch circuit 20 and circuits for triggering 40.
Wherein, the first end of semiconductor switch circuit 20 is connected with the first end of protected device, and the second end is connected with the second end of protected device, for controlling the opening and closing of overvoltage protection device; Circuits for triggering 40 are connected with the control end of semiconductor switch circuit, for triggered semiconductor switching circuit.
Adopt the present invention, use semiconductor switch circuit and circuits for triggering to combine as overvoltage protection device.Wherein, the semiconductor switch device of the use in semiconductor switch circuit significantly can reduce leakage current, and semiconductor switch device self can provide clamp voltage for protected equipment or circuit, for the protection of protected equipment or circuit simultaneously; Circuits for triggering are used for triggered semiconductor switching circuit, and the trigger voltage that circuits for triggering provide can adjust according to the actual requirements, and the electric current of circuits for triggering generation is simultaneously less, avoids the infringement to semiconductor switch circuit.By the present invention, solve clamp voltage that overvoltage protection device of the prior art provides too high and the problem of available protecting cannot be provided protected equipment or circuit, achieve to protected device effectively and the protection of safety.
In the above-described embodiments, semiconductor switch circuit can comprise the first thyristor D1 shown in Fig. 2 and the second thyristor D2, wherein, the negative pole of the first thyristor is connected with the positive pole of the second thyristor, the positive pole of the first thyristor is connected with the negative pole of the second thyristor, and the gate pole of the first thyristor and the gate pole of the second thyristor are as the control end of semiconductor switch circuit; Circuits for triggering can comprise: the first TVS pipe (TVS1 namely in figure), and first end is connected with the gate pole of the first thyristor; First resistance R1, first end is connected with the second end of the first TVS pipe, and the second end is connected with the gate pole of the second thyristor.
Fig. 2 is the schematic diagram of another the optional overvoltage protection device according to the embodiment of the present invention, below in conjunction with Fig. 2 in detail embodiments of the invention is described in detail.
As shown in Figure 2, semiconductor switch circuit can comprise the first thyristor D1 and the second thyristor D2, circuits for triggering can comprise the first TVS pipe TVS1 (Transient Voltage Suppressor, i.e. Transient Suppression Diode) and the first resistance (i.e. current-limiting resistance) R1.L with N for being connected protected circuit or equipment, if L be positive pole, N is negative pole, when protected equipment or circuit normally work, then the first thyristor D1 of overvoltage protection device is in reverse blocking state; Circuits for triggering do not have electric current to pass through yet; Second thyristor D2 has the voltage of forward, but voltage is less, and the second thyristor D2 gate pole does not have trigger voltage, so the second thyristor D2 is off-state.If LN is suddenly struck by lightning at two ends; first thyristor D1 is still in reverse blocking state; circuits for triggering then can produce a trigger voltage; the gate pole that this trigger voltage can be added in the second thyristor D2 makes the second thyristor D2 conducting, thus starts the protection of overvoltage protection device to protected equipment or circuit.
In the above-described embodiments, can trigger voltage according to actual needs by selecting dissimilar TVS pipe to regulate circuits for triggering, such as AK10-240C.
In this embodiment, adopt semiconductor device as switch, leakage current is obviously reduced, adopt semiconductor device that clamp voltage is also reduced simultaneously.
In the above embodiment of the present invention, voltage protector can also comprise: voltage clamping circuit, and the second end of semiconductor switch circuit is connected with the second end of protected device by voltage clamping circuit, and voltage clamping circuit is for absorbing the surge current in overvoltage protection device.
In above-described embodiment, voltage clamping circuit can also comprise: piezo-resistance, and first end is connected with the second end of semiconductor switch circuit, and the second end is connected with the second end of protected device.
Further, overvoltage protection device can also comprise: the second resistance, and first end is connected with the first end of semiconductor switch circuit, and the second end is connected with the second end of voltage clamping circuit.
Further, overvoltage protection device can comprise: fuse, and voltage clamping circuit is connected with the second end of protected device by fuse.
Fig. 3 is the schematic diagram of the 3rd the optional overvoltage protection device according to the embodiment of the present invention, below in conjunction with Fig. 3 in detail embodiments of the invention is described in detail.
As shown in Figure 3; semiconductor switch circuit can comprise the first thyristor D1 and the second thyristor D2; circuits for triggering can comprise the first TVS pipe TVS1 and the first resistance R1; L with N is for being connected protected circuit or equipment; compared with Fig. 2; Fig. 3 adds the second resistance (as high pressure turbine by resistance) R2 and fuse FU, and the function of voltage clamping circuit uses piezo-resistance RZ to realize in this embodiment.Wherein, the second resistance R2 is the voltage of safety resistance in protective loop for releasing, and guarantees the safe operation of circuit; Piezo-resistance RZ then plays the effect of divided current, specifically passes through when high pressure arrives reduced by self-resistance thus realize the effect of shunting; Fuse FU is used for lightning protection; when overvoltage protection device normally works, fuse can not fuse, if when overvoltage protection device meets with thunderbolt or lost efficacy; fuse FU then can fuse because of the high temperature of the excessive generation of moment surge current, thus guarantees that overvoltage protection device is unlikely to damaged.
State on the invention in embodiment; overvoltage protection device can also comprise: light-emitting diode; light-emitting diode and the second resistance form series circuit; second resistance is connected with the second end of voltage clamping circuit by light-emitting diode, or the first end of semiconductor switch circuit is connected with the second resistance by light-emitting diode.
Fig. 4 is the schematic diagram of the 4th the optional overvoltage protection device according to the embodiment of the present invention, below in conjunction with Fig. 4 in detail embodiments of the invention is described in detail.As shown in Figure 4: semiconductor switch circuit can comprise the first thyristor D1 and the second thyristor D2; circuits for triggering can comprise the first TVS pipe TVS1 and the first resistance R1; L with N is for being connected protected circuit or equipment; second resistance (as high pressure turbine by resistance) R2 and fuse FU is used for providing protective effect to circuit; piezo-resistance RZ is used for providing a part of clamp voltage; overvoltage protection device can also comprise LED; this LED has been used for indicative function, facilitates user to check operating state residing for overvoltage protection device.
Need to further illustrate, above-mentioned LED can be replaced into the device that other have indicative function, as optical coupler, thus the control point that formation one is long-range, the state advantageously in overvoltage protection device is checked and manages.
According to above-described embodiment, semiconductor switch circuit can also comprise: bidirectional thyristor, wherein, the first end of bidirectional thyristor is as the first end of semiconductor switch circuit, second end of bidirectional thyristor is as the second end of semiconductor switch circuit, and the control end of bidirectional thyristor is as the control end of semiconductor switch circuit; Circuits for triggering can comprise: solid discharge device, and first end is connected with the first end of bidirectional thyristor, and the second end is connected with the control end of bidirectional thyristor.
Overvoltage protection device can also comprise: the first diode, and series circuit is connected with the second end of voltage clamping circuit by the first diode.
Fig. 5 is the schematic diagram of the 5th the optional overvoltage protection device according to the embodiment of the present invention, below in conjunction with Fig. 5 in detail embodiments of the invention is described in detail.
As shown in Figure 5, core circuit can comprise semiconductor switch circuit and circuits for triggering.Wherein, semiconductor switch circuit can comprise bidirectional thyristor D1, and circuits for triggering can comprise the first solid discharging tube S1 and the second solid discharging tube S2, L with N for being connected protected circuit or equipment.In above-mentioned circuits for triggering operation principle and Fig. 1, circuits for triggering operation principle is similar, namely when the voltage at L and N two ends exceedes predetermined value, and the trigger voltage conducting semiconductor switching circuit that circuits for triggering produce, i.e. bidirectional thyristor D1; Fig. 5 adds the first diode D3 relative to above-mentioned several embodiment, for the protection of LED, prevents the infringement of reverse voltage; The function of device light emission diodes LED in Figure 5, the second resistance R2 and fuse FU is identical with Fig. 4, and in Fig. 5, TVS pipe is used for providing a part of clamp voltage.
Need to further illustrate, in the above-described embodiments, circuits for triggering can comprise two solid discharging tubes.Its reason often works under high pressure at overvoltage protection device, and solid discharging tube is easily breakdown.According to the form of two solid discharging tube series connection, puncture voltage can be increased on the one hand and prevent solid discharging tube from damaging; On the other hand, even if one of them solid discharging tube is breakdown, whole circuits for triggering still can normally work.
In the above-described embodiments, voltage clamping circuit can also comprise: the second TVS pipe (TVS2 namely shown in Fig. 6), and first end is connected with the second end of semiconductor switch circuit, and the second end is connected with the second end of protected device.
Fig. 6 is the schematic diagram of the 6th the optional overvoltage protection device according to the embodiment of the present invention, below in conjunction with Fig. 6 in detail embodiments of the invention is described in detail.
As shown in Figure 6; semiconductor switch circuit can comprise the first thyristor D1 and the second thyristor D2; circuits for triggering can comprise the first TVS pipe TVS1 and the first resistance R1; L with N is for being connected protected circuit or equipment; protective circuit can comprise the second resistance R2 and fuse FU, and its function is identical with device corresponding in above-described embodiment.With preceding embodiment unlike, in voltage clamping circuit, have employed the second TVS pipe in the present embodiment, i.e. high-power Transient Suppression Diode TVS2, its effect is the impact repeatedly can bearing larger surge current, for absorbing the surge current under high voltage.
Particularly, when LN two ends are subject to outside induced lightening or other forms of voltage transient attacks, circuits for triggering then have voltage and produce, when this voltage reaches the trigger gate of the second thyristor D2 in limited time, second thyristor D2 becomes conducting state, and surge voltage is all loaded on the second thyristor D2, and at this moment the second TVS pipe TVS2 starts at once, voltage transitions be current drain arrive ground, and with the form of body self-heating cooking absorb thunderbolt produce a large amount of electric energy.In the process of overvoltage protection device work, if predetermined value when surge current has exceeded overvoltage protection device design, then fuse FU will fuse, and to guarantee the safety of whole circuit and complete, avoids producing fire simultaneously.Whether intactly voltage protector is detected if need after protected circuit or equipment are struck by lightning; the resistance value by detecting LN two ends is only needed to judge; the resistance value at LN two ends is the value of the second resistance R2 under normal circumstances; if the resistance value at LN two ends is infinity, illustrate that fuse FU blows; only need replacing fuse FU, overvoltage protection device then can normally work.
Wherein, the clamped voltage value of overvoltage protection device is determined jointly by the magnitude of voltage at the second thyristor D2 and the second TVS pipe two ends, and the device model met can be selected according to actual needs to adjust clamp voltage.
As can be seen from the above description, present invention achieves following technique effect:
Adopt the present invention, use semiconductor switch circuit and circuits for triggering to combine as overvoltage protection device.Wherein, the semiconductor switch device of the use in semiconductor switch circuit significantly can reduce leakage current, and semiconductor switch device self can provide clamp voltage for protected equipment or circuit, for the protection of protected equipment or circuit simultaneously; Circuits for triggering are used for triggered semiconductor switching circuit, and the trigger voltage that circuits for triggering provide can adjust according to the actual requirements, and the electric current of circuits for triggering generation is simultaneously less, avoids the infringement to semiconductor switch circuit.By the present invention, solve clamp voltage that overvoltage protection device of the prior art provides too high and the problem of available protecting cannot be provided protected equipment or circuit, achieve to protected device effectively and the protection of safety.
Each assemblies of the claimed semiconductor switch circuit of the present invention and circuits for triggering be all a kind of have determine shape, structure and occupy the entity products of certain space.As with the electronic device such as door, not gate be all can independent operating, there are the electronic devices and components of particular hardware structure.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an overvoltage protection device, is characterized in that, comprising:
Semiconductor switch circuit, first end is connected with the first end of protected device, and the second end is connected with the second end of described protected device, for controlling the opening and closing of overvoltage protection device;
Circuits for triggering, are connected with the control end of described semiconductor switch circuit, for triggering described semiconductor switch circuit.
2. overvoltage protection device according to claim 1, is characterized in that,
Described semiconductor switch circuit comprises: the first thyristor and the second thyristor, wherein, the negative pole of described first thyristor is connected with the positive pole of described second thyristor, the positive pole of described first thyristor is connected with the negative pole of described second thyristor, and the gate pole of described first thyristor and the gate pole of described second thyristor are as the described control end of described semiconductor switch circuit;
Described circuits for triggering comprise:
First TVS pipe, first end is connected with the gate pole of described first thyristor;
First resistance, first end is connected with the second end of described first TVS pipe, and the second end is connected with the gate pole of described second thyristor.
3. overvoltage protection device according to claim 1, is characterized in that,
Described semiconductor switch circuit comprises: bidirectional thyristor, wherein, the first end of described bidirectional thyristor is as the first end of described semiconductor switch circuit, second end of described bidirectional thyristor is as the second end of described semiconductor switch circuit, and the control end of described bidirectional thyristor is as the control end of described semiconductor switch circuit;
Described circuits for triggering comprise:
Solid discharge device, first end is connected with the first end of described bidirectional thyristor, and the second end is connected with the control end of described bidirectional thyristor.
4. overvoltage protection device according to claim 1, is characterized in that, described overvoltage protection device also comprises:
Voltage clamping circuit, the second end of described semiconductor switch circuit is connected with the second end of described protected device by described voltage clamping circuit, and described voltage clamping circuit is for absorbing the surge current in described overvoltage protection device.
5. overvoltage protection device according to claim 4, is characterized in that, described voltage clamping circuit comprises:
Second TVS pipe, first end is connected with the second end of described semiconductor switch circuit, and the second end is connected with the second end of described protected device.
6. overvoltage protection device according to claim 4, is characterized in that, described voltage clamping circuit comprises:
Piezo-resistance, first end is connected with the second end of described semiconductor switch circuit, and the second end is connected with the second end of described protected device.
7. according to the overvoltage protection device in claim 4 to 6 described in any one, it is characterized in that, described overvoltage protection device comprises:
Fuse, described voltage clamping circuit is connected with the second end of described protected device by described fuse.
8. according to the overvoltage protection device in claim 4 to 6 described in any one, it is characterized in that, described overvoltage protection device also comprises:
Second resistance, first end is connected with the first end of described semiconductor switch circuit, and the second end is connected with the second end of described voltage clamping circuit.
9. overvoltage protection device according to claim 8, is characterized in that, described overvoltage protection device also comprises:
Light-emitting diode, described light-emitting diode and described second resistance form series circuit, described second resistance is connected with the second end of described voltage clamping circuit by described light-emitting diode, or the first end of described semiconductor switch circuit is connected with described second resistance by described light-emitting diode.
10. overvoltage protection device according to claim 9, is characterized in that, described overvoltage protection device also comprises:
First diode, described series circuit is connected with the second end of described voltage clamping circuit by described first diode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410811873.0A CN104578032B (en) | 2014-12-22 | 2014-12-22 | Overvoltage protection device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410811873.0A CN104578032B (en) | 2014-12-22 | 2014-12-22 | Overvoltage protection device |
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| CN104578032A true CN104578032A (en) | 2015-04-29 |
| CN104578032B CN104578032B (en) | 2017-10-31 |
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| CN201410811873.0A Active CN104578032B (en) | 2014-12-22 | 2014-12-22 | Overvoltage protection device |
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| CN104779601A (en) * | 2015-05-06 | 2015-07-15 | 杜尧生 | Overvoltage protection device and method |
| CN107852156A (en) * | 2015-08-06 | 2018-03-27 | 德恩及索恩两合股份有限公司 | Circuit arrangement for protecting a unit to be operated by an electrical supply network against overvoltages |
| CN108879641A (en) * | 2018-08-16 | 2018-11-23 | 安徽新在线科技股份有限公司 | A kind of full phase self-separating overvoltage protector of APB |
| CN114447897A (en) * | 2020-11-06 | 2022-05-06 | Abb瑞士股份有限公司 | Power semiconductor switch clamping circuit |
| CN116613720A (en) * | 2023-07-20 | 2023-08-18 | 江苏展芯半导体技术有限公司 | Surge protector |
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| CN107852156A (en) * | 2015-08-06 | 2018-03-27 | 德恩及索恩两合股份有限公司 | Circuit arrangement for protecting a unit to be operated by an electrical supply network against overvoltages |
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| CN116613720B (en) * | 2023-07-20 | 2023-09-29 | 江苏展芯半导体技术有限公司 | Surge protector |
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| Publication number | Publication date |
|---|---|
| CN104578032B (en) | 2017-10-31 |
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