CN104409367A - A QFN package bonding to a cooper frame based on copper and its production process - Google Patents
A QFN package bonding to a cooper frame based on copper and its production process Download PDFInfo
- Publication number
- CN104409367A CN104409367A CN201410564592.XA CN201410564592A CN104409367A CN 104409367 A CN104409367 A CN 104409367A CN 201410564592 A CN201410564592 A CN 201410564592A CN 104409367 A CN104409367 A CN 104409367A
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- framework
- copper
- etching
- copper cash
- bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45164—Palladium (Pd) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention discloses a QFN package bonding to a cooper frame based on copper and its production process, wherein the package mainly consists of a half-etched frame, an adhesive, a chip, a copper, a tin point, a plastic body, a coating layer and a solder ball, the chip is connected to the half-etched frame by the adhesive, the copper connects to the chip and the half-etched frame, a point where the copper connects to the half-etched framework is a second soldering point, and the solder point is fixed to the second soldering point. The production process mainly includes process procedures of: wafer thinning - dicing - mounting core - pressure soldering - melting solder reinforcement at the second soldering point - plastic packaging and post-curing - second etching a back of the frame - coating the back of the frame - implanting the ball. This process can reduce the production cost of the copper frame, and greatly reduce the packaging cost.
Description
Technical field
The present invention relates to bond technology to improve, be intended to reduce packaging cost, belong to integrated antenna package field.
Background technology
Integrated circuit is the core of information industry and new and high technology, is the basis of economic development, and integrated antenna package is the chief component of integrated circuit technique.
For current main flow encapsulation QFN, more and more higher along with its packaging density, traditional punching type frame manufacture technique can not meet highdensity requirement, need to be etched with copper material to reach highdensity requirement, but therefore make etched frame high expensive, add the complexity such as copper material surface treatment, solder joint electroplating technology, so cost is difficult to reduce always.
Pressure welding is as the important ring in integrated antenna package, and its main material is transitioned into plating palladium copper cash and alloy wire by gold thread, and pure copper wire cost is low, but is easy to oxidation due to it, never uses on a large scale.
Summary of the invention
In order to overcome the problem that the high and pure copper wire of framework cost is easily oxidized, the invention provides a kind of QFN packaging part based on copper cash and copper framework bonding and manufacture craft thereof, framework production cost is reduced, pure copper wire also can be made to be used widely, maximized reduction packaging cost.
A kind of QFN packaging part based on copper cash and copper framework bonding, primarily of half-etching framework, bonding die glue, chip, copper cash, tin point, plastic-sealed body, coat and tin ball composition, described chip is connected with half-etching framework by bonding die glue, copper cash connects chip and half-etching framework, the contact of described copper cash and half-etching framework is the second solder joint, tin point is fixed on the second solder joint, described plastic-sealed body encloses half-etching framework, bonding die glue, chip, copper cash and tin point, described coat covers on the half-etching framework after back etched, on the pin that tin ball is formed after being fixed on half-etching framework back etched.
Based on a manufacture craft for the QFN packaging part of copper cash and copper framework bonding, its technical process is: wafer is thinning, and------------the second solder joint melts tin reinforces that------framework back side second etch---framework backside coating---plants ball for plastic packaging and Post RDBMS to upper core in pressure welding in scribing.
Accompanying drawing explanation
Fig. 1 is the lead frame figure in the present invention;
Fig. 2 is product profile after upper core in the present invention;
Fig. 3 is product profile after pressure welding in the present invention;
Fig. 4 is the implementing method bubble face figure that in the present invention, the second solder joint is reinforced;
Fig. 5 is plastic packaged products profile in the present invention;
Fig. 6 is product profile after back etched in the present invention;
Fig. 7 is product profile after backside coating in the present invention;
Fig. 8 plants product profile and finished product profile after ball in the present invention.
In figure: 1-half-etching framework, 2-bonding die glue, 3-chip, 4-copper cash, 5-tin point, 6-plastic-sealed body, 7-coat, 8-tin ball.
Embodiment
The present invention is further illustrated with reference to the accompanying drawings below.
A kind of QFN packaging part based on copper cash and copper framework bonding, primarily of half-etching framework 1, bonding die glue 2, chip 3, copper cash 4, tin point 5, plastic-sealed body 6, coat 7 and tin ball 8 form, described chip 3 is connected with half-etching framework 1 by bonding die glue 2, copper cash 4 connects chip 3 and half-etching framework 1, the contact of described copper cash 4 and half-etching framework 1 is the second solder joint, tin point 5 is fixed on the second solder joint, described plastic-sealed body 6 encloses half-etching framework 1, bonding die glue 2, chip 3, copper cash 4 and tin point 5, described coat 7 covers on the half-etching framework 1 after back etched, on the pin that tin ball 8 is formed after being fixed on half-etching framework 1 back etched.
Based on a manufacture craft for the QFN packaging part of copper cash and copper framework bonding, its technical process is: wafer is thinning, and------------the second solder joint melts tin reinforces that------framework back side second etch---framework backside coating---plants ball for plastic packaging and Post RDBMS to upper core in pressure welding in scribing.
Based on a manufacture craft for the QFN packaging part of copper cash and copper framework bonding, concrete steps are as follows:
The first step: wafer is thinning, thinning scope is 50um-250um;
Second step: scribing, forms half-etching framework 1;
3rd step: adopt chip 3 on bonding die glue 2;
4th step: adopt pure copper wire 4 to carry out pressure welding;
5th step: the second solder joint adds the reinforcing that molten tin carries out the second solder joint, form tin point 5;
6th step: with plastic-sealed body 6 plastic packaging and Post RDBMS;
7th step: framework back side second etch;
8th step: framework backside coating, forms coat 7;
9th step: the pin formed after half-etching framework 1 back etched is placed the rear Reflow Soldering of tin ball 8;
Tenth step: print, cut, pack shipment etc.
Wherein, in the 3rd step, on bonding die glue, core also can adopt DAF glue to carry out upper core; The pressure welding of plating palladium copper cash can be used in 4th step; 5th step second solder joint places tin ball and adds the reinforcing that the second solder joint is carried out in Reflow Soldering, form tin point 5; Print solder paste on the pin formed after half-etching framework (1) back etched in 9th step, then carry out Reflow Soldering; Other second steps, the 6th step, the 7th step, the 8th step and the tenth step are all identical with common process.
The present invention directly carries out copper wire bonding on the pin of half-etching copper material framework, and the bonding then adopting molten tin (or placement tin ball adds Reflow Soldering) to carry out solder joint is reinforced, and makes the second solder joint more firm.This technique can reduce copper framework production cost, reduces packaging cost greatly.
Claims (6)
1. the QFN packaging part based on copper cash and copper framework bonding, it is characterized in that: described packaging part is primarily of half-etching framework (1), bonding die glue (2), chip (3), copper cash (4), tin point (5), plastic-sealed body (6), coat (7) and tin ball (8) composition, described chip (3) is connected with half-etching framework (1) by bonding die glue (2), copper cash (4) connects chip (3) and half-etching framework (1), the contact of described copper cash (4) and half-etching framework (1) is the second solder joint, tin point (5) is fixed on the second solder joint, described plastic-sealed body (6) encloses half-etching framework (1), bonding die glue (2), chip (3), copper cash (4) and tin point (5), described coat (7) covers on the half-etching framework (1) after back etched, on the pin that tin ball (8) is formed after being fixed on half-etching framework (1) back etched.
2., based on a manufacture craft for the QFN packaging part of copper cash and copper framework bonding, it is characterized in that: concrete steps are as follows:
The first step: wafer is thinning, thinning scope is 50um-250um;
Second step: scribing, forms half-etching framework (1);
3rd step: adopt the upper chip (3) of bonding die glue (2);
4th step: adopt pure copper wire (4) to carry out pressure welding;
5th step: the second solder joint adds the reinforcing that molten tin carries out the second solder joint, form tin point (5);
6th step: with plastic-sealed body (6) plastic packaging and Post RDBMS;
7th step: framework back side second etch;
8th step: framework backside coating, forms coat (7);
9th step: the pin formed after half-etching framework (1) back etched is placed tin ball (8) Reflow Soldering afterwards;
Tenth step: print, cut, pack shipment etc.
3., according to a kind of manufacture craft of the QFN packaging part based on copper cash and copper framework bonding, it is characterized in that:
Described 3rd step adopts DAF glue to carry out upper core.
4., according to a kind of manufacture craft of the QFN packaging part based on copper cash and copper framework bonding, it is characterized in that:
Described 4th step adopts the pressure welding of plating palladium copper cash.
5., according to a kind of manufacture craft of the QFN packaging part based on copper cash and copper framework bonding, it is characterized in that:
Described 5th step second solder joint places tin ball (8) and adds the reinforcing that the second solder joint is carried out in Reflow Soldering, form tin point (5).
6., according to a kind of manufacture craft of the QFN packaging part based on copper cash and copper framework bonding, it is characterized in that:
Print solder paste on the pin formed after described 9th step half-etching framework (1) back etched, then carry out Reflow Soldering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410564592.XA CN104409367A (en) | 2014-10-21 | 2014-10-21 | A QFN package bonding to a cooper frame based on copper and its production process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410564592.XA CN104409367A (en) | 2014-10-21 | 2014-10-21 | A QFN package bonding to a cooper frame based on copper and its production process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104409367A true CN104409367A (en) | 2015-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410564592.XA Pending CN104409367A (en) | 2014-10-21 | 2014-10-21 | A QFN package bonding to a cooper frame based on copper and its production process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916607A (en) * | 2015-06-18 | 2015-09-16 | 长电科技（滁州）有限公司 | Substrate-free ultra-thin packaging structure and manufacturing methods thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5894108A (en) * | 1997-02-11 | 1999-04-13 | National Semiconductor Corporation | Plastic package with exposed die |
| CN201153067Y (en) * | 2008-01-09 | 2008-11-19 | 深圳顺络电子股份有限公司 | Small-sized sheet power inductor |
| CN103094235A (en) * | 2012-12-14 | 2013-05-08 | 华天科技（西安）有限公司 | AAQFN package part using electroplating process and manufacture process thereof |
-
2014
- 2014-10-21 CN CN201410564592.XA patent/CN104409367A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5894108A (en) * | 1997-02-11 | 1999-04-13 | National Semiconductor Corporation | Plastic package with exposed die |
| CN201153067Y (en) * | 2008-01-09 | 2008-11-19 | 深圳顺络电子股份有限公司 | Small-sized sheet power inductor |
| CN103094235A (en) * | 2012-12-14 | 2013-05-08 | 华天科技（西安）有限公司 | AAQFN package part using electroplating process and manufacture process thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916607A (en) * | 2015-06-18 | 2015-09-16 | 长电科技（滁州）有限公司 | Substrate-free ultra-thin packaging structure and manufacturing methods thereof |
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Application publication date: 20150311 |