CN104360102B - The no pressure resistance type MEMS high-range acceleration transducer of lead and its manufacture method - Google Patents
The no pressure resistance type MEMS high-range acceleration transducer of lead and its manufacture method Download PDFInfo
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- CN104360102B CN104360102B CN201410702200.1A CN201410702200A CN104360102B CN 104360102 B CN104360102 B CN 104360102B CN 201410702200 A CN201410702200 A CN 201410702200A CN 104360102 B CN104360102 B CN 104360102B
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Abstract
The present invention relates to acceleration transducer, the pressure resistance type MEMS high-range acceleration transducer of specifically a kind of no lead and its manufacture method.The present invention solves the problems, such as limited by the existing pressure resistance type high-range acceleration transducer scope of application.The pressure resistance type MEMS high-range acceleration transducer of no lead, including substrate, closed cavity, the first cantilever beam, the second cantilever beam, the 3rd cantilever beam, the 4th cantilever beam, mass, planar spiral inductor, the first varistor, the second varistor, the first electric capacity, the second electric capacity, the first string holes, the second string holes, the 3rd string holes, the 4th string holes, the first electrical wiring, the second electrical wiring, the 3rd electrical wiring, the 4th electrical wiring, the 5th electrical wiring.Present invention degree of being suited to speed up measures.
Description
Technical field
The present invention relates to acceleration transducer, the pressure resistance type MEMS high-range acceleration transducer of specifically a kind of no lead
And its manufacture method.
Background technology
Pressure resistance type high-range acceleration transducer has that sensitivity is high, overload capacity is strong because of it, to harsh environments（Example
As high temperature, radiation, HI high impact etc.）One of the advantages of adaptability is good, and be increasingly becoming the focus of acceleration transducer research field.
Under prior art conditions, pressure resistance type high-range acceleration transducer all carries leaded, leads to its metering system to be limited only to
Contact type measurement, thus leads to its scope of application critical constraints.Specifically, in some adverse circumstances（For example high temperature, high pressure,
HI high impact etc.）Under, contact type measurement easily detonator circuit lost efficacy, lead degeneration at high temperature the problems such as, thus lead to pressure resistance type a large amount
Journey acceleration transducer cannot normal work, thus leading to the scope of application of pressure resistance type high-range acceleration transducer to be seriously subject to
Limit.Based on this it is necessary to invent a kind of brand-new pressure resistance type high-range acceleration transducer, to solve existing pressure resistance type high range
Problem limited by the acceleration transducer scope of application.
Content of the invention
The present invention is in order to solve the problems, such as limited by the existing pressure resistance type high-range acceleration transducer scope of application, there is provided one
Plant no the pressure resistance type MEMS high-range acceleration transducer of lead and its manufacture method.
The present invention adopts the following technical scheme that realization：The pressure resistance type MEMS high-range acceleration transducer of no lead,
Including substrate, closed cavity, the first cantilever beam, the second cantilever beam, the 3rd cantilever beam, the 4th cantilever beam, mass, snail
Inductance, the first varistor, the second varistor, the first electric capacity, the second electric capacity, the first string holes, the second string holes, the 3rd string holes,
4th string holes, the first electrical wiring, the second electrical wiring, the 3rd electrical wiring, the 4th electrical wiring, the 5th electrical wiring；
Wherein, substrate is bonded together to form by upper strata substrate, middle level substrate, underlying substrate；
Closed cavity is located at the inside of substrate；
The left inside cavity wall of the left side of the first cantilever beam and closed cavity is fixed；The right side of the second cantilever beam is empty with closing
The right internal chamber wall in chamber is fixed；The front end face of the 3rd cantilever beam is fixed with the front interior cavity wall of closed cavity；The rear end of the 4th cantilever beam
The rear interior cavity wall of face and closed cavity is fixed；
The right side of the left surface of mass and the first cantilever beam is fixed；The right surface of mass and a left side for the second cantilever beam
End face is fixed；The rear end face of the front surface of mass and the 3rd cantilever beam is fixed；The rear surface of mass and the 4th cantilever beam
Front end face is fixed；
Planar spiral inductor is located at the lower outer chamber wall of closed cavity；
First varistor is located at the upper surface of the first cantilever beam；Second varistor is located at the upper table of the second cantilever beam
Face；
The top crown of the first electric capacity is located at the left back portion of the upper internal chamber wall of closed cavity；The bottom crown of the first electric capacity is located at envelope
Close the left back portion of the lower inner cavity wall of cavity；The top crown of the second electric capacity is located at the right rear portion of the upper internal chamber wall of closed cavity；Second
The bottom crown of electric capacity is located at the right rear portion of the lower inner cavity wall of closed cavity；
The two ends of the first string holes left back portion of upper internal chamber wall of insertion closed cavity and left inside cavity wall respectively；Second string holes
The two ends left back portion of lower inner cavity wall of insertion closed cavity and the left back portion of lower outer chamber wall respectively；The two ends of the 3rd string holes are passed through respectively
The right rear portion of the upper internal chamber wall of logical closed cavity and right internal chamber wall；The lower inner cavity of the two ends difference insertion closed cavity of the 4th string holes
The right rear portion of wall and the right rear portion of lower outer chamber wall；
One section of first electrical wiring is sputtered in First Line in the hole, another section of upper surface being deposited on the first cantilever beam；First
The two ends of electrical wiring are connected with the top crown of the first electric capacity and the first varistor respectively；Second electrical wiring is sputtered in the second string holes
Interior；The two ends of the second electrical wiring are connected with the bottom crown of the first electric capacity and one end of planar spiral inductor respectively；3rd electrical wiring
One section be sputtered in the 3rd string holes, another section of upper surface being deposited on the second cantilever beam；The two ends of the 3rd electrical wiring respectively with
The top crown of the second electric capacity and the second varistor connect；4th electrical wiring is sputtered in the 4th string holes；The two of 4th electrical wiring
End is connected with the bottom crown of the second electric capacity and the other end of planar spiral inductor respectively；5th electrical wiring is deposited on first simultaneously and hangs
The upper surface of arm beam, the upper surface of the second cantilever beam, the upper surface of mass；The two ends of the 5th electrical wiring are pressure-sensitive with first respectively
Resistance and the second varistor connect.
During work, the pressure resistance type MEMS high-range acceleration transducer of no lead of the present invention is placed in measurement carrier
In, by planar spiral inductor and external data reading device（External data reading device includes signal generator, impedance analysis
Instrument and being made up of the transmitting coil that equivalent capacity and equivalent inductance are in series）Coupled, in external data reading device
Signal generator pass through transmitting coil transmission signal so that the impedance at transmitting coil two ends is in sensor RLC oscillating circuit
Change at resonant frequency, as shown in Figure 4.Specific work process is as follows：When measurement carrier is accelerated, mass
There is relative displacement so that the first cantilever beam, the second cantilever beam, the 3rd cantilever beam, the 4th cantilever beam are equal and closed cavity between
Deform upon, so that the resistance of the resistance of the first varistor, the second varistor all changes, so that outside
The impedance at the transmitting coil two ends in digital independent device changes.At this point it is possible to draw the variable quantity of impedance.According to impedance
Variable quantity, you can calculate the change in resistance amount of the first varistor, the change in resistance amount of the second varistor, thus calculate
Go out deformation quantity, the deformation quantity of the second cantilever beam of the first cantilever beam, thus the big of stress is derived according to the deformation quantity of cantilever beam
Little, the size finally according to stress calculates the accekeration measuring carrier.
Based on said process, compared with existing pressure resistance type high-range acceleration transducer, no lead of the present invention
Pressure resistance type MEMS high-range acceleration transducer, without leaded, thus achieve non-contact measurement, effectively prevent because connecing
Touch measurement and cause circuit malfunction, lead degeneration at high temperature the problems such as, thus pressure resistance type high-range acceleration has been effectively ensured
Sensor normal work under various harsh environments, has greatly widened being suitable for of pressure resistance type high-range acceleration transducer
Scope.
The manufacture method of the no pressure resistance type MEMS high-range acceleration transducer of lead（The method is used for manufacturing institute of the present invention
The pressure resistance type MEMS high-range acceleration transducer of the no lead stated）, the method is to be realized using following steps：
A. choose upper strata substrate, and cavity is opened up in the lower surface of upper strata substrate using MEMS technology；Then, in this cavity
The left back portion of upper internal chamber wall deposit the top crown that metal forms the first electric capacity, in the right rear portion deposit of the upper internal chamber wall of this cavity
Metal forms the top crown of the second electric capacity；Then, using TSV（Through Silicon Vias, silicon perforation）Technique is recessed at this
Open up the first string holes between the left back portion of the upper internal chamber wall in chamber and left inside cavity wall, using TSV technique this cavity upper internal chamber wall
Right rear portion and right internal chamber wall between open up the 3rd string holes；Then, form the first electrical wiring in First Line in the hole splash-proofing sputtering metal
One section, in the 3rd string holes, splash-proofing sputtering metal forms one section of the 3rd electrical wiring, one end of the first electrical wiring thus with the first electric capacity
Top crown connect, one end of the 3rd electrical wiring is thus connected with the top crown of the second electric capacity；
B. choose middle level substrate, and formation the is processed between the upper and lower surface of middle level substrate using MEMS technology
One cantilever beam, the second cantilever beam, the 3rd cantilever beam, the 4th cantilever beam, mass；Then, using doping process in the first cantilever
The upper surface of beam generates the first varistor, generates the second varistor using doping process in the upper surface of the second cantilever beam；
Then, the upper surface in the first cantilever beam deposits another section that metal forms the first electrical wiring, in the upper surface of the second cantilever beam
Deposit metal forms the other end of the 3rd electrical wiring, in the upper surface of the first cantilever beam, the upper surface of the second cantilever beam, mass
Upper surface deposit metal form the 5th electrical wiring, the other end of the first electrical wiring is thus connected with the first varistor, the 3rd
The other end of electrical wiring is thus connected with the second varistor, the two ends of the 5th electrical wiring thus respectively with the first varistor and
Second varistor connects；
C. choose underlying substrate, and cavity is opened up in the upper surface of underlying substrate using MEMS technology；Then, in this cavity
The left back portion of lower inner cavity wall deposit the bottom crown that metal forms the first electric capacity, in the right rear portion deposit of the lower inner cavity wall of this cavity
Metal forms the bottom crown of the second electric capacity；Then, the lower outer chamber wall deposit metal in this cavity forms planar spiral inductor；So
Afterwards, the second string holes is opened up between the left back portion of the left back portion of the lower inner cavity wall in this cavity and lower outer chamber wall using TSV technique, adopt
With opening up the 4th string holes between the right rear portion of the lower inner cavity wall in this cavity for the TSV technique and the right rear portion of lower outer chamber wall；Then, exist
In second string holes, splash-proofing sputtering metal forms the second electrical wiring, and in the 4th string holes, splash-proofing sputtering metal forms the 4th electrical wiring, and second is electrically connected
The two ends of line are thus connected with the bottom crown of the first electric capacity and one end of planar spiral inductor respectively, the two ends of the 4th electrical wiring by
This is connected with the bottom crown of the second electric capacity and the other end of planar spiral inductor respectively；
D. upper strata substrate, middle level substrate, underlying substrate are bonded together formation substrate, the cavity of upper strata substrate and lower floor
The cavity of substrate is thus collectively forming closed cavity.
The present invention efficiently solve the problems, such as limited by the existing pressure resistance type high-range acceleration transducer scope of application it is adaptable to
Acceleration analysis.
Brief description
Fig. 1 is the structural representation of the pressure resistance type MEMS high-range acceleration transducer of the no lead of the present invention.
Fig. 2 is the structural representation of the middle level substrate of pressure resistance type MEMS high-range acceleration transducer of the no lead of the present invention
Figure.
Fig. 3 is the structure of the planar spiral inductor of pressure resistance type MEMS high-range acceleration transducer of the no lead of the present invention
Schematic diagram.
Fig. 4 is the working condition of the pressure resistance type MEMS high-range acceleration transducer of the no lead of the present invention with reference to figure.
In figure：1- substrate, 2- closed cavity, 3- first cantilever beam, 4- second cantilever beam, 5- the 3rd cantilever beam, 6- the 4th
Cantilever beam, 7- mass, 8- planar spiral inductor, 9- first varistor, 10- second varistor, 11- first electrical wiring,
12- second electrical wiring, 13- the 3rd electrical wiring, 14- the 4th electrical wiring, 15- the 5th electrical wiring, the top crown of 16- first electric capacity,
The bottom crown of 17- first electric capacity, the top crown of 18- second electric capacity, the bottom crown of 19- and the second electric capacity, 20- external data reads
Device, 21- signal generator, 22- electric impedance analyzer, 23- equivalent capacity, 24- equivalent inductance.
Specific embodiment
The pressure resistance type MEMS high-range acceleration transducer of no lead, including substrate 1, closed cavity 2, the first cantilever beam 3,
Second cantilever beam 4, the 3rd cantilever beam 5, the 4th cantilever beam 6, mass 7, planar spiral inductor 8, the first varistor 9, second
Varistor 10, the first electric capacity, the second electric capacity, the first string holes, the second string holes, the 3rd string holes, the 4th string holes, the first electrical wiring
11st, the second electrical wiring 12, the 3rd electrical wiring 13, the 4th electrical wiring 14, the 5th electrical wiring 15；
Wherein, substrate 1 is bonded together to form by upper strata substrate, middle level substrate, underlying substrate；
Closed cavity 2 is located at the inside of substrate 1；
The left side of the first cantilever beam 3 is fixed with the left inside cavity wall of closed cavity 2；The right side of the second cantilever beam 4 and envelope
The right internal chamber wall closing cavity 2 is fixed；The front end face of the 3rd cantilever beam 5 is fixed with the front interior cavity wall of closed cavity 2；4th cantilever beam
The rear interior cavity wall of 6 rear end face and closed cavity 2 is fixed；
The right side of the left surface of mass 7 and the first cantilever beam 3 is fixed；The right surface of mass 7 and the second cantilever beam 4
Left side fix；The rear end face of the front surface of mass 7 and the 3rd cantilever beam 5 is fixed；The rear surface of mass 7 hangs with the 4th
The front end face of arm beam 6 is fixed；
Planar spiral inductor 8 is located at the lower outer chamber wall of closed cavity 2；
First varistor 9 is located at the upper surface of the first cantilever beam 3；Second varistor 10 is located at the second cantilever beam 4
Upper surface；
The top crown 16 of the first electric capacity is located at the left back portion of the upper internal chamber wall of closed cavity 2；The bottom crown 17 of the first electric capacity
Left back portion positioned at the lower inner cavity wall of closed cavity 2；The top crown 18 of the second electric capacity is located at the right side of the upper internal chamber wall of closed cavity 2
Rear portion；The bottom crown 19 of the second electric capacity is located at the right rear portion of the lower inner cavity wall of closed cavity 2；
The two ends of the first string holes left back portion of upper internal chamber wall of insertion closed cavity 2 and left inside cavity wall respectively；Second string holes
The two ends respectively left back portion of lower inner cavity wall of insertion closed cavity 2 and the left back portion of lower outer chamber wall；The two ends of the 3rd string holes are divided
The right rear portion of the upper internal chamber wall of other insertion closed cavity 2 and right internal chamber wall；The two ends difference insertion closed cavity 2 of the 4th string holes
The right rear portion of lower inner cavity wall and the right rear portion of lower outer chamber wall；
One section of first electrical wiring 11 is sputtered in First Line in the hole, another section of upper surface being deposited on the first cantilever beam 3；The
The two ends of one electrical wiring 11 are connected with the top crown 16 of the first electric capacity and the first varistor 9 respectively；Second electrical wiring 12 sputters
In the second string holes；The two ends of the second electrical wiring 12 respectively with the bottom crown 17 of the first electric capacity and one end of planar spiral inductor 8
Connect；One section of 3rd electrical wiring 13 is sputtered in the 3rd string holes, another section of upper surface being deposited on the second cantilever beam 4；3rd
The two ends of electrical wiring 13 are connected with the top crown 18 of the second electric capacity and the second varistor 10 respectively；4th electrical wiring 14 is sputtered in
In 4th string holes；The two ends of the 4th electrical wiring 14 respectively with the bottom crown 19 of the second electric capacity and the other end of planar spiral inductor 8
Connect；5th electrical wiring 15 is deposited on the upper surface of the first cantilever beam 3, the upper surface of the second cantilever beam 4, mass 7 simultaneously
Upper surface；The two ends of the 5th electrical wiring 15 are connected with the first varistor 9 and the second varistor 10 respectively.
When being embodied as, substrate 1, the first cantilever beam 3, the second cantilever beam 4, the 3rd cantilever beam 5, the 4th cantilever beam 6, quality
Block 7 is all made using SiC.
The manufacture method of the no pressure resistance type MEMS high-range acceleration transducer of lead（The method is used for manufacturing institute of the present invention
The pressure resistance type MEMS high-range acceleration transducer of the no lead stated）, the method is to be realized using following steps：
A. choose upper strata substrate, and cavity is opened up in the lower surface of upper strata substrate using MEMS technology；Then, in this cavity
The left back portion of upper internal chamber wall deposit the top crown 16 that metal forms the first electric capacity, form sediment at the right rear portion of the upper internal chamber wall of this cavity
Long-pending metal forms the top crown 18 of the second electric capacity；Then, the left back portion of the upper internal chamber wall in this cavity and left inside using TSV technique
Open up the first string holes between cavity wall, open up using between the right rear portion of the upper internal chamber wall in this cavity for the TSV technique and right internal chamber wall
3rd string holes；Then, form one section of the first electrical wiring 11 in First Line in the hole splash-proofing sputtering metal, splash-proofing sputtering metal in the 3rd string holes
Form one section of the 3rd electrical wiring 13, one end of the first electrical wiring 11 is thus connected with the top crown 16 of the first electric capacity, the 3rd electricity
One end of line 13 is thus connected with the top crown 18 of the second electric capacity；
B. choose middle level substrate, and formation the is processed between the upper and lower surface of middle level substrate using MEMS technology
One cantilever beam 3, the second cantilever beam 4, the 3rd cantilever beam 5, the 4th cantilever beam 6, mass 7；Then, using doping process first
The upper surface of cantilever beam 3 generates the first varistor 9, generates the second pressure using doping process in the upper surface of the second cantilever beam 4
Quick resistance 10；Then, the upper surface in the first cantilever beam 3 deposits another section that metal forms the first electrical wiring 11, outstanding second
The upper surface of arm beam 4 deposits the other end that metal forms the 3rd electrical wiring 13, in upper surface, second cantilever of the first cantilever beam 3
The upper surface of beam 4, the upper surface deposit metal of mass 7 form the 5th electrical wiring 15, and the other end of the first electrical wiring 11 is thus
It is connected with the first varistor 9, the other end of the 3rd electrical wiring 13 is thus connected with the second varistor 10, the 5th electrical wiring 15
Two ends be thus connected with the first varistor 9 and the second varistor 10 respectively；
C. choose underlying substrate, and cavity is opened up in the upper surface of underlying substrate using MEMS technology；Then, in this cavity
The left back portion of lower inner cavity wall deposit the bottom crown 17 that metal forms the first electric capacity, form sediment at the right rear portion of the lower inner cavity wall of this cavity
Long-pending metal forms the bottom crown 19 of the second electric capacity；Then, the lower outer chamber wall deposit metal in this cavity forms planar spiral inductor
8；Then, the second line is opened up between the left back portion of the left back portion of the lower inner cavity wall in this cavity and lower outer chamber wall using TSV technique
Hole, opens up the 4th string holes using between the right rear portion of the lower inner cavity wall in this cavity for the TSV technique and the right rear portion of lower outer chamber wall；So
Afterwards, in the second string holes, splash-proofing sputtering metal forms the second electrical wiring 12, and in the 4th string holes, splash-proofing sputtering metal forms the 4th electrical wiring 14,
The two ends of the second electrical wiring 12 are thus connected with the bottom crown 17 of the first electric capacity and one end of planar spiral inductor 8 respectively, and the 4th
The two ends of electrical wiring 14 are thus connected with the bottom crown 19 of the second electric capacity and the other end of planar spiral inductor 8 respectively；
D. upper strata substrate, middle level substrate, underlying substrate are bonded together formation substrate 1, the cavity of upper strata substrate and under
The cavity of layer substrate is thus collectively forming closed cavity 2.
Claims (3)
1. a kind of no lead pressure resistance type MEMS high-range acceleration transducer it is characterised in that：Including substrate（1）, closing empty
Chamber（2）, the first cantilever beam（3）, the second cantilever beam（4）, the 3rd cantilever beam（5）, the 4th cantilever beam（6）, mass（7）, plane
Spiral inductance（8）, the first varistor（9）, the second varistor（10）, the first electric capacity, the second electric capacity, the first string holes, second
String holes, the 3rd string holes, the 4th string holes, the first electrical wiring（11）, the second electrical wiring（12）, the 3rd electrical wiring（13）, the 4th be electrically connected
Line（14）, the 5th electrical wiring（15）；
Wherein, substrate（1）Bonded together to form by upper strata substrate, middle level substrate, underlying substrate；
Closed cavity（2）Located at substrate（1）Inside；
First cantilever beam（3）Left side and closed cavity（2）Left inside cavity wall fix；Second cantilever beam（4）Right side with
Closed cavity（2）Right internal chamber wall fix；3rd cantilever beam（5）Front end face and closed cavity（2）Front interior cavity wall fix；The
Four cantilever beams（6）Rear end face and closed cavity（2）Rear interior cavity wall fix；
Mass（7）Left surface and the first cantilever beam（3）Right side fix；Mass（7）Right surface and the second cantilever
Beam（4）Left side fix；Mass（7）Front surface and the 3rd cantilever beam（5）Rear end face fix；Mass（7）After
Surface and the 4th cantilever beam（6）Front end face fix；
Planar spiral inductor（8）Positioned at closed cavity（2）Lower outer chamber wall；
First varistor（9）Positioned at the first cantilever beam（3）Upper surface；Second varistor（10）Positioned at the second cantilever beam
（4）Upper surface；
The top crown of the first electric capacity（16）Positioned at closed cavity（2）Upper internal chamber wall left back portion；The bottom crown of the first electric capacity
（17）Positioned at closed cavity（2）Lower inner cavity wall left back portion；The top crown of the second electric capacity（18）Positioned at closed cavity（2）Upper
The right rear portion of internal chamber wall；The bottom crown of the second electric capacity（19）Positioned at closed cavity（2）Lower inner cavity wall right rear portion；
The two ends of the first string holes insertion closed cavity respectively（2）The left back portion of upper internal chamber wall and left inside cavity wall；Second string holes
Two ends insertion closed cavity respectively（2）The left back portion of lower inner cavity wall and lower outer chamber wall left back portion；The two ends of the 3rd string holes are divided
Other insertion closed cavity（2）The right rear portion of upper internal chamber wall and right internal chamber wall；The two ends of the 4th string holes insertion closed cavity respectively
（2）The right rear portion of lower inner cavity wall and lower outer chamber wall right rear portion；
First electrical wiring（11）One section be sputtered in First Line in the hole, another section is deposited on the first cantilever beam（3）Upper surface；The
One electrical wiring（11）The two ends top crown with the first electric capacity respectively（16）With the first varistor（9）Connect；Second electrical wiring
（12）It is sputtered in the second string holes；Second electrical wiring（12）The two ends bottom crown with the first electric capacity respectively（17）And snail
Inductance（8）One end connect；3rd electrical wiring（13）One section be sputtered in the 3rd string holes, another section is deposited on the second cantilever beam
（4）Upper surface；3rd electrical wiring（13）The two ends top crown with the second electric capacity respectively（18）With the second varistor（10）
Connect；4th electrical wiring（14）It is sputtered in the 4th string holes；4th electrical wiring（14）The two ends lower pole with the second electric capacity respectively
Plate（19）And planar spiral inductor（8）The other end connect；5th electrical wiring（15）It is deposited on the first cantilever beam simultaneously（3）Upper
Surface, the second cantilever beam（4）Upper surface, mass（7）Upper surface；5th electrical wiring（15）Two ends respectively with first pressure
Quick resistance（9）With the second varistor（10）Connect.
2. no lead according to claim 1 pressure resistance type MEMS high-range acceleration transducer it is characterised in that：Substrate
（1）, the first cantilever beam（3）, the second cantilever beam（4）, the 3rd cantilever beam（5）, the 4th cantilever beam（6）, mass（7）All adopt
SiC makes.
3. the manufacture method of the pressure resistance type MEMS high-range acceleration transducer of a kind of no lead, the method is used for manufacturing such as right
Require 1 described in no lead pressure resistance type MEMS high-range acceleration transducer it is characterised in that：The method is to be walked using following
Rapid realization：
A. choose upper strata substrate, and the first cavity is opened up in the lower surface of upper strata substrate using MEMS technology；Then, this first
The left back portion of the upper internal chamber wall of cavity deposits the top crown that metal forms the first electric capacity（16）, in the upper internal chamber wall of this first cavity
Right rear portion deposit the top crown that metal forms the second electric capacity（18）；Then, using TSV technique this first cavity upper inner chamber
The first string holes is opened up, using TSV technique behind the right side of the upper internal chamber wall of this first cavity between the left back portion of wall and left inside cavity wall
The 3rd string holes is opened up between portion and right internal chamber wall；Then, form the first electrical wiring in First Line in the hole splash-proofing sputtering metal（11）One
Section, in the 3rd string holes, splash-proofing sputtering metal forms the 3rd electrical wiring（13）One section, the first electrical wiring（11）One end thus with
The top crown of one electric capacity（16）Connect, the 3rd electrical wiring（13）One end thus top crown with the second electric capacity（18）Connect；
B. choose middle level substrate, and formation first is processed between the upper and lower surface of middle level substrate using MEMS technology and hang
Arm beam（3）, the second cantilever beam（4）, the 3rd cantilever beam（5）, the 4th cantilever beam（6）, mass（7）；Then, using doping process
In the first cantilever beam（3）Upper surface generate the first varistor（9）, using doping process in the second cantilever beam（4）Upper table
Face generates the second varistor（10）；Then, in the first cantilever beam（3）Upper surface deposit metal formed the first electrical wiring（11）
Another section, in the second cantilever beam（4）Upper surface deposit metal formed the 3rd electrical wiring（13）The other end, in the first cantilever
Beam（3）Upper surface, the second cantilever beam（4）Upper surface, mass（7）Upper surface deposit metal formed the 5th electrical wiring
（15）, the first electrical wiring（11）The other end thus with the first varistor（9）Connect, the 3rd electrical wiring（13）The other end by
This is with the second varistor（10）Connect, the 5th electrical wiring（15）Two ends thus respectively with the first varistor（9）With second
Varistor（10）Connect；
C. choose underlying substrate, and the second cavity is opened up in the upper surface of underlying substrate using MEMS technology；Then, this second
The left back portion of the lower inner cavity wall of cavity deposits the bottom crown that metal forms the first electric capacity（17）, in the lower inner cavity wall of this second cavity
Right rear portion deposit the bottom crown that metal forms the second electric capacity（19）；Then, in the lower outer chamber wall deposit metal of this second cavity
Form planar spiral inductor（8）；Then, the left back portion of the lower inner cavity wall in this second cavity and lower outer chamber wall using TSV technique
Left back portion between open up the second string holes, using right rear portion and the lower outer chamber wall of the lower inner cavity wall in this second cavity for the TSV technique
Right rear portion between open up the 4th string holes；Then, in the second string holes, splash-proofing sputtering metal forms the second electrical wiring（12）, in the 4th line
In the hole splash-proofing sputtering metal forms the 4th electrical wiring（14）, the second electrical wiring（12）The two ends thus bottom crown with the first electric capacity respectively
（17）And planar spiral inductor（8）One end connect, the 4th electrical wiring（14）The two ends thus lower pole with the second electric capacity respectively
Plate（19）And planar spiral inductor（8）The other end connect；
D. upper strata substrate, middle level substrate, underlying substrate are bonded together formation substrate（1）, the first cavity of upper strata substrate and
Second cavity of underlying substrate is thus collectively forming closed cavity（2）.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410702200.1A CN104360102B (en) | 2014-11-28 | 2014-11-28 | The no pressure resistance type MEMS high-range acceleration transducer of lead and its manufacture method |
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| CN201410702200.1A CN104360102B (en) | 2014-11-28 | 2014-11-28 | The no pressure resistance type MEMS high-range acceleration transducer of lead and its manufacture method |
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| CN104360102B true CN104360102B (en) | 2017-03-08 |
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| CN106006539B (en) * | 2016-06-20 | 2017-06-20 | 宁波工程学院 | A kind of B doping big coefficient of strain high sensibility pressure transducer of SiC nanowire |
| CN107782472A (en) * | 2017-09-27 | 2018-03-09 | 东南大学 | Inductance two-end fixed beam wireless and passive strain gauge |
| CN107747981A (en) * | 2017-09-27 | 2018-03-02 | 东南大学 | Inductance cantilever beam wireless and passive flow sensor |
| CN107765036A (en) * | 2017-09-27 | 2018-03-06 | 东南大学 | Inductance two-end fixed beam wireless and passive acceleration transducer |
| CN107727696A (en) * | 2017-09-27 | 2018-02-23 | 东南大学 | Inductance cantilever beam wireless and passive humidity sensor |
| CN107817058A (en) * | 2017-09-27 | 2018-03-20 | 东南大学 | Inductance cantilever beam wireless and passive temperature sensor |
| CN107576821A (en) * | 2017-09-27 | 2018-01-12 | 东南大学 | Inductance cantilever beam wireless and passive acceleration transducer |
| CN110308309B (en) * | 2019-08-13 | 2021-06-22 | 中北大学 | High-temperature-resistant capacitive accelerometer and wireless test verification platform thereof |
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