CN104064508B - Eliminate the sucker and method of exposing wafer defect out of focus - Google Patents
Eliminate the sucker and method of exposing wafer defect out of focus Download PDFInfo
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- CN104064508B CN104064508B CN201410321501.XA CN201410321501A CN104064508B CN 104064508 B CN104064508 B CN 104064508B CN 201410321501 A CN201410321501 A CN 201410321501A CN 104064508 B CN104064508 B CN 104064508B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a kind of sucker and method for eliminating exposing wafer defect out of focus, the sucker has flat upper surface, for supporting wafer；It includes：Multiple vacuum sucking holes, dense distribution is in sucker upper surface, for each position of wafer to be adsorbed in the same plane；Multiple thermocouples, dense distribution is in sucker bottom, and setting alternate with vacuum sucking holes, for heating wafer.The present invention is by setting the thermocouple that high density is distributed in sucker bottom, and the vacuum sucking holes that high density is distributed are set in sucker upper surface, the upper surface for coordinating sucker flat again, pass through heating process, the stress in wafer is set slowly to discharge, and the pull of vacuum for coordinating vacuum sucking holes to act on wafer makes wafer be close to the flat upper surface of sucker, so as to reduce warpage deformation of diamond wafer defect, make flattening wafer surface, the defect out of focus in exposure process is further obviated, exposure quality and product yield is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of sucker for eliminating exposing wafer defect out of focus and elimination
The method of exposing wafer defect out of focus.
Background technology
In semiconductor fabrication, it can inevitably accumulate big after it experienced multiple tracks manufacturing process, on wafer
The stress of amount, causes warpage deformation of diamond wafer.As shown in figure 1, in the schematic diagram of the test height difference for wafer, Fig. 1, dark color is represented
Warpage up or down, numeral is bigger to represent that deformation is bigger.Warpage deformation of diamond wafer, it will have influence on the quality of exposure technology.Tool
For body, exposure sources can not all compensate focusing depth of focus so that exposure it is out of focus, as shown in Fig. 2 Fig. 2 be wafer have it is out of focus
In the exposure schematic diagram of defect, Fig. 2, the black region that white dashed line is framed represents defect out of focus.Exposure is out of focus will to be caused to expose
Light figure collapses, and causes circuit malfunction.
In exposure technology, generally wafer is positioned on sucker, absorption fixation is carried out by the vacuum sucking holes on sucker,
Then process is exposed again.Patent publication No for CN 103367217A patent disclose a kind of silicon chip adsorbent equipment and its
Adsorption method, although on this sucker have vacuum sucking holes wafer can be adsorbed, wafer do not occur buckling deformation or
Fixed wafer can be met in the case of buckling deformation is less and improves the requirement of warpage deformation of diamond wafer, still, is become for warpage
Shape more serious situation, it is simple to increase the mechanical force put on wafer by vacuum is improved, can be due to strength mistake
Cause the fracture of wafer greatly, reduce product yield；Under the conditions of raising vacuum is conditional, it is impossible to wafer is completely eliminated
Buckling deformation defect, therefore, exposing defect out of focus still can be present.
The content of the invention
In order to overcome problem above, it is an object of the invention to provide a kind of sucker for eliminating exposing wafer defect out of focus and side
Method, the vacuum of high density distribution is set by setting the thermocouple that high density is distributed in sucker bottom, and in sucker upper surface
Sucker, in the heating process of thermocouple, wafer is close to sucker upper surface by vacuum sucking holes by vacuum suction, so as to eliminate
Warpage deformation of diamond wafer.
To achieve these goals, technical scheme is as follows：
The invention provides a kind of sucker for eliminating exposing wafer defect out of focus, it has flat upper surface, for propping up
Support wafer；Wherein, the sucker includes：
Multiple vacuum sucking holes, dense distribution is in the sucker upper surface, for each position absorption of the wafer to be existed
In same plane；
Multiple thermocouples, dense distribution in the sucker bottom, and it is alternate with the vacuum sucking holes set, for heating
State wafer.
Preferably, the multiple vacuum sucking holes, dense distribution is in the sucker upper surface, and with the center of the sucker
For on the concentric circles in the center of circle；The multiple thermocouple, dense distribution in the sucker bottom, and using the center of the sucker as
On the concentric circles in the center of circle.
Preferably, the spacing between the vacuum sucking holes is not more than 1mm.
Preferably, the spacing between the thermocouple is not more than 10mm.
Preferably, the difference in height of each position of the upper surface of the sucker is not more than 100nm.
To achieve these goals, present invention also offers a kind of method for eliminating exposing wafer defect out of focus, including according to
It is secondary to carry out：Wafer is positioned over sucker upper surface；Planarization process is carried out to the wafer；Work is exposed to the wafer
Skill；Wherein, the method that the wafer carries out planarization process is included：The wafer is heated using thermocouple, meanwhile,
Using vacuum sucking holes to the wafer applying vacuum suction, so as to complete the planarization process of the wafer.
Preferably, the planarization process method of the wafer, is specifically included：
Within the identical time, heating heating is carried out to the wafer using thermocouple, meanwhile, by vacuum sucking holes progressively
Increase the pull of vacuum to the wafer；
Within the identical time, heated at constant temperature is carried out to the wafer using the thermocouple, meanwhile, pass through the vacuum
Sucker applies constant vacuum suction to the wafer；
Temperature-fall period is carried out to the wafer using the thermocouple, until arriving room temperature；Wherein, the thermocouple is to described
The heating-up temperature of wafer is gradually reduced；
The pull of vacuum to the wafer is gradually reduced by the vacuum sucking holes again, until the wafer is from the sucker
On discharge, so as to complete the planarization process of the wafer.
Preferably, the temperature of the heated at constant temperature is 120~200 DEG C, 80~90kpa of the constant vacuum suction, institute
The time for stating heated at constant temperature is 30~40s.
Preferably, the time of described heating heating is 2~3s, and the pull of vacuum is advanced the speed as 30~40kpa/
s。
Preferably, the time of the temperature-fall period is 2~3s, and the reduction speed of the pull of vacuum is 30~40kpa/s.
The sucker and method of the elimination exposing wafer defect out of focus of the present invention, the heat that high density is distributed is set in sucker bottom
Galvanic couple, and the vacuum sucking holes of high density distribution are set in sucker upper surface, then coordinate the flat upper surface of sucker, pass through heating
Process, makes the stress in wafer slowly discharge, and the active force produced by coordinating the absorption of vacuum sucking holes makes wafer be close to suction
The flat upper surface of disk, so as to reduce and eliminate warpage deformation of diamond wafer position, makes flattening wafer surface, eliminates exposure process
In defect out of focus, improve exposure quality and product yield.
Brief description of the drawings
Fig. 1 is the poor schematic diagram of the test height of wafer
Fig. 2 is the exposure schematic diagram that wafer has defect out of focus
Fig. 3 is the structural representation of the sucker of the preferred embodiment of the present invention
Fig. 4 is the schematic flow sheet of the method for the elimination exposing wafer defect out of focus of the present invention
The schematic flow sheet for the method that Fig. 5 is handled for the wafer planarizationization of the preferred embodiment of the present invention
The relation of time and temperature is shown during Fig. 6 is handled for the wafer planarizationization of the preferred embodiment of the present invention
It is intended to
Fig. 7 is the poor schematic diagram of the test height of wafer after the planarization process of the present invention
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
As previously described, because the buckling deformation of wafer, can cause occur defect out of focus in exposure process, and existing side
Method, it is simply simple to be deformed by increasing the vacuum of vacuum sucking holes come increasing action in the power on wafer to reduce it, due to
The power put on wafer unconfined can not increase, so, in the case where warpage deformation of diamond wafer is more serious, pass through merely
The method of increase vacuum sucking holes vacuum is still not able to eliminate warpage deformation of diamond wafer defect, so that exposure process can not be eliminated
In defect out of focus.Therefore, present invention improves over the sucker structure used in existing exposure process, by being set in sucker bottom
The thermocouple of high density distribution is put, and the vacuum sucking holes that high density is distributed are set in sucker upper surface, so that using application
Wafer is heated while pull of vacuum, wafer is in thermal histories, and stress slowly discharges, so as to reach elimination warpage deformation of diamond wafer
Purpose.
The sucker of the elimination exposing wafer defect out of focus of the present invention is made into one below with reference to accompanying drawing 3 and specific embodiment
Step is described in detail.It should be noted that, accompanying drawing uses very simplified form, using non-accurately ratio, and only to facilitate,
Clearly reach the purpose for aiding in illustrating the present embodiment.
Referring to Fig. 3, the structural representation of the sucker for the preferred embodiment of the present invention, sucker 00 of the invention,
With flat upper surface 1, for supporting wafer；Multiple vacuum sucking holes 2 and multiple thermocouples 3；
Multiple vacuum sucking holes 2, dense distribution is in sucker upper surface 1, for each position absorption of wafer to be put down same
In face；In order to make each position of wafer be all close to sucker upper surface 1 by pull of vacuum as far as possible, vacuum sucking holes are added
2 density being distributed on sucker 00, make the high density of vacuum sucking holes 2 be distributed in sucker upper surface 1, so as to one face of wafer formation
Suction-operated, makes wafer be close to sucker upper surface 1.Because sucker upper surface 1 is relatively flat, sucker upper surface is so close to
1 produces extruding equivalent to silicon wafer warpage position, so as to eliminate its buckling deformation defect.Dense distribution is exactly that requirement has higher
Density, in an embodiment of the invention, the spacing between vacuum sucking holes are not more than 1mm.
In the preferred embodiment of the present invention, vacuum sucking holes, dense distribution is in sucker upper surface, and with sucker
Center is on the concentric circles in the center of circle.In order that high density distribution is presented in vacuum sucking holes, preferably, the spacing between the concentric circles is not
More than 1mm.
It should be noted that the shape of vacuum sucking holes 2 can have any shape, such as, and circle, ellipse, triangle, just
Polygon, flower shape etc., the invention is not limited in this regard.
Multiple thermocouples 3, dense distribution in the bottom of sucker 00, and it is alternate with vacuum sucking holes 2 set, for heating wafer；
In order to make being heated evenly on wafer as far as possible, reduce the stress in wafer, the heat of high density distribution is provided with the bottom of sucker 00
Galvanic couple 3；Also, in order to not influence the setting and work of vacuum sucking holes 2, thermocouple 3 should distribute alternately with vacuum sucking holes 2,
It is to reach the effect that the distributing position of thermocouple 3 and vacuum sucking holes 2 is independent of each other；In order to realize that high density is distributed, in this hair
In a bright preferred embodiment, the spacing between thermocouple is not more than 10mm.
In the preferred embodiment of the present invention, the dense distribution of thermocouple 3 is in sucker bottom, and with the center of sucker
For on the concentric circles in the center of circle.In order that the high density of thermocouple 3 is distributed, preferably, the spacing between the concentric circles is not more than 10mm.
Warpage deformation of diamond wafer defect is eliminated in order to further reach, the purpose of wafer planarization degree is improved, suction can be made
Disk upper surface has very high flatness, during wafer is close to sucker upper surface, utilizes the Gao Ping of sucker upper surface
It is smooth to spend to improve degree of absorption of the vacuum sucking holes to wafer, further increase the improvement condition to warpage deformation of diamond wafer.Therefore, inhale
The difference in height of each position of disk upper surface should be the smaller the better, in the preferred embodiment of the present invention, the upper table of sucker
The difference in height of each position in face is not more than 100nm, for example, can be 50nm, or even 10nm.There is sucker upper surface such
The method of high flatness can have many kinds, such as, during sucker upper surface is made, and one is deposited in sucker upper surface
The nano level alloy firm of layer, this kind of alloy firm can be prepared using existing technique, such as, the side such as magnetron sputtering
Formula, because one of ordinary skill in the art could be aware that the preparation method of nanoscale alloy firm, the present invention no longer goes to live in the household of one's in-laws on getting married to this
State.Therefore, in the present invention, what the sucker with very flat upper surface can be achieved on, so that the sucker of the present invention is to crystalline substance
Round degree of absorption can be higher than existing sucker.
Below in conjunction with accompanying drawing 4 and Fig. 5 and specific embodiment to the method for eliminating exposing wafer defect out of focus of the invention
It is described in further detail.It should be noted that, accompanying drawing is using very simplified form, using non-accurately ratio, and only use
Conveniently, clearly to reach the purpose of aid illustration the present embodiment.
Referring to Fig. 4, the schematic flow sheet of the method for the elimination exposing wafer defect out of focus of the present invention, of the invention disappears
Except the method for exposing wafer defect out of focus, comprise the following steps：
Step S01：Wafer is positioned over sucker upper surface；
Specifically, in the preferred embodiment of the present invention, it is possible to use wafer is placed on the upper of sucker by manipulator
Surface.
Step S02：Planarization process is carried out to wafer；
As it was previously stated, in order to avoid producing defect out of focus in exposure process, it is necessary to eliminate warpage deformation of diamond wafer defect,
Wafer is tended to be flat, therefore, need to carry out planarization process to wafer before exposure.
Specifically, in the present invention, the method that planarization process is carried out to wafer, including：Wafer is entered using thermocouple
Row heating, meanwhile, using vacuum sucking holes to wafer applying vacuum suction, so as to complete the planarization process of wafer.Heated
Cheng Zhong, the stress of inside wafer can be released, then coordinate the physical force of pull of vacuum, wafer is close to sucker upper table
Face, so as to reduce and eliminate the defect of warpage deformation of diamond wafer.
Step S03：Technique is exposed to wafer；
Because one of ordinary skill in the art could be aware that the existing process that technique is exposed to wafer, the present invention
This is repeated no more.
In the preferred embodiment of the present invention, Fig. 5 and Fig. 6 are referred to, is the preferred embodiment of the present invention
The schematic flow sheet of the method for wafer planarizationization processing, Fig. 6 is handled for the wafer planarizationization of the preferred embodiment of the present invention
During time and temperature relation schematic diagram；To the planarization process method of wafer in the present embodiment, it can include following
Step：
Step A01：Within the identical time, heating heating is carried out to wafer using thermocouple, meanwhile, pass through vacuum sucking holes
It is stepped up the pull of vacuum to wafer；
Here, heat and increase pull of vacuum process be simultaneously progress, can using setting time t1 as the heating-up time,
In t1, wafer is heated with certain heating rate, heating rate can be set according to the required heating-up temperature reached
It is fixed, while increasing pull of vacuum with certain speed, pull of vacuum, vacuum can be improved by increasing extracted vacuum
Advancing the speed for suction can be set according to the required pull of vacuum reached.In the preferred embodiment of the present invention, when
Between t1 can be 2~3s, advancing the speed for pull of vacuum can be 30~40kpa/s.
Step A02：Within the identical time, heated at constant temperature is carried out to wafer using thermocouple, meanwhile, pass through vacuum sucking holes
Constant vacuum suction is applied to wafer；
Here, heated at constant temperature is to carry out simultaneously with constant vacuum suction is applied, and after above-mentioned time t1 terminates, is entered
Heated at constant temperature process, while pull of vacuum keeps constant, can be using setting time t2 as the time of heated at constant temperature, heated at constant temperature process
In, with the extension of time, the stress in wafer is slowly released, last stress, which substantially discharges, all to be discharged；Answering
During power discharges, along with pull of vacuum is acted on wafer, wafer is set to be close to sucker upper surface, and sucker upper surface
Also power is acted to wafer so that the buckling deformation of wafer reduces, and finally eliminates warpage deformation of diamond wafer, makes wafer area flat
Change.In the preferred embodiment of the present invention, the temperature of heated at constant temperature can be 120~200C, and constant vacuum suction can be
80~90kpa, the heated at constant temperature time can be 30~40S.
Step A03：Temperature-fall period is carried out to wafer using thermocouple, until arriving room temperature；
Here, after wafer distortion is eliminated, gradually reduce heating-up temperature, until room temperature, can using setting time t3 as
Temperature fall time, within the t3 times, thermocouple is gradually reduced to the heating-up temperature of wafer, such as at the uniform velocity reduction or speed change reduction etc.,
Wafer is reduced with heating-up temperature, and the temperature of itself is also gradually being reduced, until room temperature；Because unexpected reduction temperature can be made
Increase into inside wafer stress or be broken, therefore, in the present embodiment by the way of progressively cooling, it is preferred that temperature fall time can
Think 2~3s, the reduction speed of pull of vacuum is 30~40kpa/s.
Step A04：The pull of vacuum to wafer is gradually reduced by vacuum sucking holes again, until wafer discharges from sucker
Open, so as to complete the planarization process of wafer.
Here, if strongly reducing pull of vacuum, moment force unbalance can be caused to wafer, make wafer fly away from sucker or
Other damages, accordingly, it would be desirable to gradually reduce pull of vacuum, make wafer gently be discharged from sucker.
Referring to Fig. 6, exposure schematic diagrames of the Fig. 6 for wafer after the planarization process of the present invention；It can be seen that, using this hair
Bright sucker and method carry out the wafer after planarization process, eliminate exposure defect out of focus, thus improve exposure quality and
Yield.
In summary, the sucker and method of elimination exposing wafer defect out of focus of the invention, set highly dense in sucker bottom
The thermocouple of distribution is spent, and the vacuum sucking holes of high density distribution are set in sucker upper surface, then coordinates the flat upper table of sucker
Face, by heating process, makes the stress in wafer slowly discharge, and the active force produced by coordinating the absorption of vacuum sucking holes makes crystalline substance
Circle is close to the flat upper surface of sucker, so as to reduce and eliminate warpage deformation of diamond wafer position, makes flattening wafer surface, eliminates
Defect out of focus in exposure process, improves exposure quality and product yield.
Although the present invention is disclosed as above with preferred embodiment, the right embodiment illustrated only for the purposes of explanation and
, the present invention is not limited to, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry change and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (10)
1. a kind of sucker for eliminating exposing wafer defect out of focus, it has flat upper surface, for supporting wafer；Its feature exists
In the sucker includes：
Multiple vacuum sucking holes, dense distribution is in the sucker upper surface, for each position of the wafer to be adsorbed same
In plane；
Multiple thermocouples, dense distribution in the sucker bottom, and it is alternate with the vacuum sucking holes set, for heating the crystalline substance
Circle；
Sucker upper surface deposition has one layer of nano level alloy firm.
2. the sucker according to claim 1 for eliminating exposing wafer defect out of focus, it is characterised in that
The multiple vacuum sucking holes, dense distribution is in the sucker upper surface and using the center of the sucker as the concentric of the center of circle
On circle；
The multiple thermocouple, dense distribution is in the sucker bottom and in the concentric circles using the center of the sucker as the center of circle
On.
3. it is according to claim 1 eliminate exposing wafer defect out of focus sucker, it is characterised in that the vacuum sucking holes it
Between spacing be not more than 1mm.
4. the sucker according to claim 1 for eliminating exposing wafer defect out of focus, it is characterised in that between the thermocouple
Spacing be not more than 10mm.
5. the sucker according to claim 1 for eliminating exposing wafer defect out of focus, it is characterised in that the upper table of the sucker
The difference in height of each position in face is not more than 100nm.
6. a kind of sucker according to claim 1 is come the method that eliminates exposing wafer defect out of focus, it is characterised in that including
Carry out successively：
One layer of nano level alloy firm is deposited in sucker upper surface；
Wafer is positioned over sucker upper surface；
Planarization process is carried out to the wafer；
Technique is exposed to the wafer；Wherein,
The method that the wafer carries out planarization process is included：
The wafer is heated using thermocouple, meanwhile, using vacuum sucking holes to the wafer applying vacuum suction, so that
Complete the planarization process of the wafer.
7. it is according to claim 6 eliminate exposing wafer defect out of focus method, it is characterised in that the wafer it is flat
Change processing method, specifically include：
Within the identical time, heating heating is carried out to the wafer using thermocouple, meanwhile, it is stepped up by vacuum sucking holes
To the pull of vacuum of the wafer；
Within the identical time, heated at constant temperature is carried out to the wafer using the thermocouple, meanwhile, pass through the vacuum sucking holes
Constant vacuum suction is applied to the wafer；
Temperature-fall period is carried out to the wafer using the thermocouple, until arriving room temperature；Wherein, the thermocouple is to the wafer
Heating-up temperature gradually reduce；
The pull of vacuum to the wafer is gradually reduced by the vacuum sucking holes again, until the wafer is released from the sucker
Decontrol, so as to complete the planarization process of the wafer.
8. the method according to claim 7 for eliminating exposing wafer defect out of focus, it is characterised in that the heated at constant temperature
Temperature is 120~200 DEG C, and the constant vacuum suction is 80~90kpa, and the time of the heated at constant temperature is 30~40s.
9. the method according to claim 7 for eliminating exposing wafer defect out of focus, it is characterised in that described heating heating
Time be 2~3s, the pull of vacuum is advanced the speed as 30~40kpa/s.
10. the method according to claim 7 for eliminating exposing wafer defect out of focus, it is characterised in that the temperature-fall period
Time be 2~3s, the reduction speed of the pull of vacuum is 30~40kpa/s.
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| CN201410321501.XA CN104064508B (en) | 2014-07-08 | 2014-07-08 | Eliminate the sucker and method of exposing wafer defect out of focus |
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| CN201410321501.XA CN104064508B (en) | 2014-07-08 | 2014-07-08 | Eliminate the sucker and method of exposing wafer defect out of focus |
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| CN104064508B true CN104064508B (en) | 2017-07-25 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108206144B (en) * | 2016-12-19 | 2021-02-02 | 苏州能讯高能半导体有限公司 | Adsorption method of warped wafer and device using same |
| CN108511312B (en) * | 2018-03-29 | 2020-04-10 | 长江存储科技有限责任公司 | Wafer bonding plasma processing device |
| CN110473798B (en) * | 2019-08-19 | 2021-10-19 | 上海华力微电子有限公司 | Method for detecting ultra-small-size defects on wafer surface |
| CN112420591B (en) * | 2019-08-20 | 2022-06-10 | 长鑫存储技术有限公司 | Heating plate and method for controlling surface temperature of wafer |
| CN112439998A (en) * | 2020-10-30 | 2021-03-05 | 松山湖材料实验室 | Low-flatness wafer laser processing adsorption device and method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5564682A (en) * | 1993-08-13 | 1996-10-15 | Kabushiki Kaisha Toshiba | Wafer stage apparatus for attaching and holding semiconductor wafer |
| CN1685484A (en) * | 2002-09-24 | 2005-10-19 | 东京毅力科创株式会社 | Substrate processing apparatus |
| CN103367217A (en) * | 2012-04-11 | 2013-10-23 | 上海微电子装备有限公司 | Silicon-chip absorption device and absorption method thereof |
-
2014
- 2014-07-08 CN CN201410321501.XA patent/CN104064508B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5564682A (en) * | 1993-08-13 | 1996-10-15 | Kabushiki Kaisha Toshiba | Wafer stage apparatus for attaching and holding semiconductor wafer |
| CN1685484A (en) * | 2002-09-24 | 2005-10-19 | 东京毅力科创株式会社 | Substrate processing apparatus |
| CN103367217A (en) * | 2012-04-11 | 2013-10-23 | 上海微电子装备有限公司 | Silicon-chip absorption device and absorption method thereof |
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| CN104064508A (en) | 2014-09-24 |
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