CN103713347A - Infrared temperature measuring filter with passing band of 7550-13900 nm - Google Patents
Infrared temperature measuring filter with passing band of 7550-13900 nm Download PDFInfo
- Publication number
- CN103713347A CN103713347A CN201310631573.XA CN201310631573A CN103713347A CN 103713347 A CN103713347 A CN 103713347A CN 201310631573 A CN201310631573 A CN 201310631573A CN 103713347 A CN103713347 A CN 103713347A
- Authority
- CN
- China
- Prior art keywords
- thickness
- layer
- zns
- zns layer
- temperature measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention designs an infrared temperature measuring filter with a passing band of 7550-13900 nm, the infrared temperature measuring filter being high in measurement precision and capable of substantially increasing the signal-to-noise ratio. The infrared temperature measuring filter comprises a substrate taking Si as the raw material, a first film coating layer made of Ge and ZnS, and a second film coating layer made of Ge and ZnS. The substrate is located between the first film coating layer and the second film coating layer. According to the infrared temperature measuring filter of the invention, during the temperature measurement process, the signal-to-noise ratio can be substantially increased and the measurement precision is increased. Certain parameters of the filter are that: 50% Cut on = 7550 +/- 200 nm; 50% Cut off = 13900 +/- 400 nm; 7750-13400 nm Tavg >= 85%; and 2000-7000 nm, 14500-19000 nm Tavg <= 1%.
Description
Technical field
The present invention relates to infrared fileter field, especially a kind of infrared measurement of temperature optical filter that is 7550-13900nm by band.
Background technology
Infrared thermometer is partly comprised of optical system, detector, signal amplifier and signal processing, demonstration output etc.Optical system converges the Infrared Targets energy (heat) in its visual field, and the size of visual field is by optical element and the location positioning thereof of temperature measurer.Infrared energy focuses on detector and changes corresponding electric signal into.This signal process amplifier and signal processing circuit, and according to changing the temperature value of measured target after the algorithm in instrument and the correction of target emissivity into.
The detector of infrared thermometer is the key that realizes infrared energy (heat energy) switching electrical signals, the infrared energy (heat) sending due to various biologies is different, so in routine use in order to observe the temperature value of certain particular organisms, people tend to add infrared fileter in detector, by infrared fileter, can make detector only accept the infrared energy of specific band, guarantee the temperature-measuring results of infrared thermometer, for thermometric and imaging.
But, the infrared measurement of temperature optical filter that current is 7550-13900nm by band, its signal to noise ratio (S/N ratio) is low, and low precision can not meet the needs of market development.
Summary of the invention
The object of the invention is provides in order to solve the deficiency of above-mentioned technology the infrared measurement of temperature optical filter that is 7550-13900nm by band that a kind of measuring accuracy is high, can greatly improve signal to noise ratio (S/N ratio).
In order to achieve the above object, the infrared measurement of temperature optical filter that is 7550-13900nm by band that the present invention is designed, comprises and take Si as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 411nm thickness, the ZnS layer of 271nm thickness, the Ge layer of 356nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 187nm thickness, the ZnS layer of 346nm thickness, the Ge layer of 156nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 159nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 194nm thickness, the ZnS layer of 293nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 289nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 391nm thickness, the Ge layer of 180nm thickness, the ZnS layer of 231nm thickness, the Ge layer of 302nm thickness, the ZnS layer of 404nm thickness, the Ge layer of 353nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 259nm thickness, the ZnS layer of 310nm thickness, the Ge layer of 382nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 373nm thickness, the ZnS layer of 302nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 331nm thickness, the Ge layer of 350nm thickness, the ZnS layer of 390nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 751nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 462nm thickness, the Ge layer of 439nm thickness, the ZnS layer of 806nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 963nm thickness, the Ge layer of 427nm thickness, the ZnS layer of 311nm thickness, the Ge layer of 410nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 546nm thickness and the ZnS layer of 358nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 145nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 1953nm thickness, the Ge layer of 357nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 607nm thickness, the ZnS layer of 2262nm thickness, the Ge layer of 982nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 247nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1257nm thickness, the ZnS layer of 1587nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 558nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 2315nm thickness, the Ge layer of 897nm thickness, the ZnS layer of 195nm thickness, the Ge layer of 312nm thickness, the ZnS layer of 590nm thickness, the Ge layer of 1263nm thickness, the ZnS layer of 1976nm thickness, the Ge layer of 168nm thickness, the ZnS layer of 298nm thickness, the Ge layer of 477nm thickness and the ZnS layer of 1175nm thickness.
Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.
The infrared measurement of temperature optical filter that the present invention is resulting is 7550-13900nm by band, it can improve greatly signal to noise ratio (S/N ratio) in temperature survey process, improves accurate testing degree.This optical filter 50%Cut on=7550 ± 200nm, 50%Cutoff=13900 ± 400nm; 7750～13400nm Tavg >=85%; 2000～7000nm, 14500～19000nmTavg≤1%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, the infrared measurement of temperature optical filter that is 7550-13900nm by band that the present embodiment is described, comprises and take Si as raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 411nm thickness, the ZnS layer of 271nm thickness, the Ge layer of 356nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 187nm thickness, the ZnS layer of 346nm thickness, the Ge layer of 156nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 159nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 194nm thickness, the ZnS layer of 293nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 289nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 391nm thickness, the Ge layer of 180nm thickness, the ZnS layer of 231nm thickness, the Ge layer of 302nm thickness, the ZnS layer of 404nm thickness, the Ge layer of 353nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 259nm thickness, the ZnS layer of 310nm thickness, the Ge layer of 382nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 373nm thickness, the ZnS layer of 302nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 331nm thickness, the Ge layer of 350nm thickness, the ZnS layer of 390nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 751nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 462nm thickness, the Ge layer of 439nm thickness, the ZnS layer of 806nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 963nm thickness, the Ge layer of 427nm thickness, the ZnS layer of 311nm thickness, the Ge layer of 410nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 546nm thickness and the ZnS layer of 358nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of 145nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 1953nm thickness, the Ge layer of 357nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 607nm thickness, the ZnS layer of 2262nm thickness, the Ge layer of 982nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 247nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1257nm thickness, the ZnS layer of 1587nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 558nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 2315nm thickness, the Ge layer of 897nm thickness, the ZnS layer of 195nm thickness, the Ge layer of 312nm thickness, the ZnS layer of 590nm thickness, the Ge layer of 1263nm thickness, the ZnS layer of 1976nm thickness, the Ge layer of 168nm thickness, the ZnS layer of 298nm thickness, the Ge layer of 477nm thickness and the ZnS layer of 1175nm thickness.
Claims (1)
1. an infrared measurement of temperature optical filter that is 7550-13900nm by band, comprises and take Si as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 411nm thickness, the ZnS layer of 271nm thickness, the Ge layer of 356nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 187nm thickness, the ZnS layer of 346nm thickness, the Ge layer of 156nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 159nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 194nm thickness, the ZnS layer of 293nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 289nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 391nm thickness, the Ge layer of 180nm thickness, the ZnS layer of 231nm thickness, the Ge layer of 302nm thickness, the ZnS layer of 404nm thickness, the Ge layer of 353nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 259nm thickness, the ZnS layer of 310nm thickness, the Ge layer of 382nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 373nm thickness, the ZnS layer of 302nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 331nm thickness, the Ge layer of 350nm thickness, the ZnS layer of 390nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 751nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 462nm thickness, the Ge layer of 439nm thickness, the ZnS layer of 806nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 963nm thickness, the Ge layer of 427nm thickness, the ZnS layer of 311nm thickness, the Ge layer of 410nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 546nm thickness and the ZnS layer of 358nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 145nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 1953nm thickness, the Ge layer of 357nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 607nm thickness, the ZnS layer of 2262nm thickness, the Ge layer of 982nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 247nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1257nm thickness, the ZnS layer of 1587nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 558nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 2315nm thickness, the Ge layer of 897nm thickness, the ZnS layer of 195nm thickness, the Ge layer of 312nm thickness, the ZnS layer of 590nm thickness, the Ge layer of 1263nm thickness, the ZnS layer of 1976nm thickness, the Ge layer of 168nm thickness, the ZnS layer of 298nm thickness, the Ge layer of 477nm thickness and the ZnS layer of 1175nm thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310631573.XA CN103713347B (en) | 2013-11-29 | 2013-11-29 | By the infrared measurement of temperature optical filter that band is 7550-13900nm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310631573.XA CN103713347B (en) | 2013-11-29 | 2013-11-29 | By the infrared measurement of temperature optical filter that band is 7550-13900nm |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103713347A true CN103713347A (en) | 2014-04-09 |
| CN103713347B CN103713347B (en) | 2016-02-10 |
Family
ID=50406466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310631573.XA Active CN103713347B (en) | 2013-11-29 | 2013-11-29 | By the infrared measurement of temperature optical filter that band is 7550-13900nm |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103713347B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597543A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 7600 nm long-wave pass infrared filtering sensitive element |
| CN106199803A (en) * | 2016-07-25 | 2016-12-07 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
| CN110146948A (en) * | 2018-11-26 | 2019-08-20 | 上海欧菲尔光电技术有限公司 | A kind of silicon base long wave leads to infrared fileter and preparation method thereof |
| EP3598105A1 (en) | 2018-07-20 | 2020-01-22 | Omya International AG | Method for detecting phosphate and/or sulphate salts on the surface of a substrate or within a substrate, use of a lwir detecting device and a lwir imaging system |
| EP3855163A1 (en) | 2020-01-21 | 2021-07-28 | Omya International AG | Method and apparatus for detecting an amorphous and/or crystalline structure of phosphate and/or sulphate salts on the surface of a substrate or within a substrate |
| WO2022136490A1 (en) | 2020-12-23 | 2022-06-30 | Omya International Ag | Method and apparatus for detecting an amorphous and/or crystalline structure of phosphate and/or sulphate salts on the surface of a substrate or within a substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4158133A (en) * | 1976-08-20 | 1979-06-12 | Siemens Aktiengesellschaft | Filters for photo-detectors |
| US20040207920A1 (en) * | 2003-04-15 | 2004-10-21 | Alps Electric Co., Ltd | Multilayer optical filter and optical component |
| WO2010025536A1 (en) * | 2008-09-08 | 2010-03-11 | National Research Council Of Canada | Thin film optical filters with an integral air layer |
| CN102590917A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | Infrared filter with broadband of 3.65 to 5 microns, and manufacturing method for infrared filter |
| CN203551819U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with passband of 7550-13900nm |
-
2013
- 2013-11-29 CN CN201310631573.XA patent/CN103713347B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4158133A (en) * | 1976-08-20 | 1979-06-12 | Siemens Aktiengesellschaft | Filters for photo-detectors |
| US20040207920A1 (en) * | 2003-04-15 | 2004-10-21 | Alps Electric Co., Ltd | Multilayer optical filter and optical component |
| WO2010025536A1 (en) * | 2008-09-08 | 2010-03-11 | National Research Council Of Canada | Thin film optical filters with an integral air layer |
| CN102590917A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | Infrared filter with broadband of 3.65 to 5 microns, and manufacturing method for infrared filter |
| CN203551819U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with passband of 7550-13900nm |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597543A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 7600 nm long-wave pass infrared filtering sensitive element |
| CN106199803A (en) * | 2016-07-25 | 2016-12-07 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
| CN106199803B (en) * | 2016-07-25 | 2018-11-06 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
| EP3598105A1 (en) | 2018-07-20 | 2020-01-22 | Omya International AG | Method for detecting phosphate and/or sulphate salts on the surface of a substrate or within a substrate, use of a lwir detecting device and a lwir imaging system |
| WO2020016401A1 (en) | 2018-07-20 | 2020-01-23 | Omya International Ag | Method for detecting phosphate and/or sulphate salts on the surface of a substrate or within a substrate, use of a lwir detecting device and a lwir imaging system |
| CN110146948A (en) * | 2018-11-26 | 2019-08-20 | 上海欧菲尔光电技术有限公司 | A kind of silicon base long wave leads to infrared fileter and preparation method thereof |
| CN110146948B (en) * | 2018-11-26 | 2021-05-11 | 上海欧菲尔光电技术有限公司 | Silicon substrate long-wave pass infrared filter and preparation method thereof |
| EP3855163A1 (en) | 2020-01-21 | 2021-07-28 | Omya International AG | Method and apparatus for detecting an amorphous and/or crystalline structure of phosphate and/or sulphate salts on the surface of a substrate or within a substrate |
| EP3855162A1 (en) | 2020-01-21 | 2021-07-28 | Omya International AG | Lwir imaging system for detecting an amorphous and/or crystalline structure of phosphate and/or sulphate salts on the surface of a substrate or within a substrate and use of the lwir imaging system |
| WO2021148222A1 (en) | 2020-01-21 | 2021-07-29 | Omya International Ag | Detection of an amorphous and/or crystalline structure of phosphate and/or sulphate salts on the surface of a substrate or within a substrate with a lwir imaging system |
| WO2022136490A1 (en) | 2020-12-23 | 2022-06-30 | Omya International Ag | Method and apparatus for detecting an amorphous and/or crystalline structure of phosphate and/or sulphate salts on the surface of a substrate or within a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103713347B (en) | 2016-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103713347B (en) | By the infrared measurement of temperature optical filter that band is 7550-13900nm | |
| CN203551827U (en) | Infrared measuring temperature filter with pass band of 7600-9900 nm | |
| CN203551819U (en) | Infrared temperature measurement optical filter with passband of 7550-13900nm | |
| CN102116687B (en) | Method for calibrating temperature precision of temperature sensor chip | |
| CN107817054B (en) | Temperature measurement method of infrared imager for parts in vacuum cavity | |
| CN103713013B (en) | Test tubulose material shaft is to the device of coefficient of heat conductivity | |
| CN103698831B (en) | By the infrared measurement of temperature optical filter that band is 7600-9900nm | |
| CN103713345B (en) | By the infrared measurement of temperature optical filter that band is 7600-9300nm | |
| CN103713344B (en) | The nitric oxide gas of centre wavelength 4580nm detects optical filter | |
| CN203572994U (en) | Infrared temperature measuring optical filter with passband in range of 7600 to 9300 nm | |
| CN202720273U (en) | High-precision phase difference detection device | |
| CN203572999U (en) | Temperature measuring optical filter with initial passing wavelength of 5700 nm | |
| CN105487154A (en) | Infrared imaging optical filter with a passing band of 3600 to 4950nm | |
| CN103698830A (en) | Temperature measuring light filter with initial passing wavelength of 5700 nm | |
| CN204374475U (en) | 7600nm long-pass infrared filtering sensitive element | |
| CN204374464U (en) | By the infrared filtering sensitive element that band is 3000-3500nm | |
| CN204374467U (en) | The logical infrared filtering sensitive element of 4600nm band | |
| CN104597543A (en) | 7600 nm long-wave pass infrared filtering sensitive element | |
| CN204374465U (en) | The logical infrared filtering sensitive element of 4700nm band | |
| CN104597538A (en) | 6000 nm long-wave pass infrared filtering sensitive element | |
| CN104597546A (en) | Infrared light filtering sensitive element with passing bands ranging from 4200nm to 4450nm | |
| CN204374468U (en) | 4700nm long-pass infrared filtering sensitive element | |
| CN103713349B (en) | The medical infrared gas detection analysis filter of centre wavelength 6557nm | |
| CN104597547A (en) | 4700 nm band-pass infrared filtering sensitive element | |
| CN202275175U (en) | 7300-namometer long-wave-pass infrared optical filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee before: Multi IR Optoelectronics Co., Ltd. |