CN103713346A

CN103713346A - Aviation tail gas detection filter with central wavelength of 2700 nm

Info

Publication number: CN103713346A
Application number: CN201310631477.5A
Authority: CN
Inventors: 王继平; 吕晶; 胡伟琴
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: Hangzhou Mai peak Polytron Technologies Inc
Priority date: 2013-11-29
Filing date: 2013-11-29
Publication date: 2014-04-09
Anticipated expiration: 2033-11-29
Also published as: CN103713346B

Abstract

The invention designs an aviation tail gas detection filter with a central wavelength of 2700 nm, the aviation tail gas detection filter being high in measurement precision and capable of substantially increasing the signal-to-noise ratio. The aviation tail gas detection filter comprises a substrate taking Ge as the raw material, a first film coating layer made of Ge and SiO, and a second film coating layer made of Ge and SiO. The substrate is located between the first film coating layer and the second film coating layer. According to the aviation tail gas detection filter of the invention, the central wavelength of the filter is 2700 +/- 5 nm so that during the aviation tail gas detection process, the signal-to-noise ratio can be substantially increased and the measurement precision can be increased. Certain parameters of the filter are that: peak transmittance Tp >= 80%; bandwidth = 200 +/- 20 nm; and 1000-3500 nm (except the passband), Tavg < 0.5%.

Description

The aviation tail gas gas of centre wavelength 2700nm detects optical filter

Technical field

The present invention relates to aviation tail gas gas and detect optical filter, the aviation tail gas gas of especially a kind of centre wavelength 2700nm detects optical filter.

Background technology

Infrared fileter filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object at an easy rate, and namely infrared ray can not reflect when through object.Utilize ultrared this characteristic, only allow long wavelength's infrared ray pass through, filtering short wavelength's ultraviolet ray and visible ray.Be applied to a lot of fields, the problem existing for the optical filter using in aviation tail gas gas testing process is at present that the signal to noise ratio (S/N ratio) of transmitance and cut-off region is not high, can not meet high-precision measurement requirement.

Summary of the invention

The object of the invention is to provide in order to solve the deficiency of above-mentioned technology that a kind of measuring accuracy is high, the aviation tail gas gas of the centre wavelength 2700nm that can greatly improve signal to noise ratio (S/N ratio) detects optical filter.

In order to achieve the above object, the aviation tail gas gas of the centre wavelength 2700nm that the present invention is designed detects optical filter, comprise and take Ge as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 96nm thickness, the SiO layer of 304nm thickness, the Ge layer of 132nm thickness, the SiO layer of 159nm thickness, the Ge layer of 82nm thickness, the SiO layer of 338nm thickness, the Ge layer of 140nm thickness, the SiO layer of 339nm thickness, the Ge layer of 137nm thickness, the SiO layer of 349nm thickness, the Ge layer of 70nm thickness, the SiO layer of 169nm thickness, the Ge layer of 136nm thickness, the SiO layer of 343nm thickness, the Ge layer of 149nm thickness, the SiO layer of 473nm thickness, the Ge layer of 232nm thickness, the SiO layer of 668nm thickness, the Ge layer of 103nm thickness and the SiO layer of 226nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the SiO layer of 166nm thickness, the Ge layer of 92nm thickness, the Ge layer of the SiO layer of 222nm thickness, 102nm thickness, the Ge layer of the SiO layer of 277nm thickness, 135nm thickness, the Ge layer of the SiO layer of 150nm thickness, 55nm thickness and the SiO layer of 150nm thickness.

Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.

The aviation tail gas gas of the resulting centre wavelength 2700nm of the present invention detects optical filter, its centre wavelength 2700 ± 5nm, and it,, in aviation tail gas gas testing process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree.Peak transmittance Tp >=80% of this optical filter, bandwidth=200 ± 20nm, 1000～3500nm(is except passband), Tavg<0.5%.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram;

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

Embodiment

Below by embodiment, the invention will be further described by reference to the accompanying drawings.

Embodiment 1:

As Fig. 1, shown in Fig. 2, the aviation tail gas gas of the centre wavelength 2700nm that the present embodiment is described detects optical filter, comprise and take Ge as raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 96nm thickness, the SiO layer of 304nm thickness, the Ge layer of 132nm thickness, the SiO layer of 159nm thickness, the Ge layer of 82nm thickness, the SiO layer of 338nm thickness, the Ge layer of 140nm thickness, the SiO layer of 339nm thickness, the Ge layer of 137nm thickness, the SiO layer of 349nm thickness, the Ge layer of 70nm thickness, the SiO layer of 169nm thickness, the Ge layer of 136nm thickness, the SiO layer of 343nm thickness, the Ge layer of 149nm thickness, the SiO layer of 473nm thickness, the Ge layer of 232nm thickness, the SiO layer of 668nm thickness, the Ge layer of 103nm thickness and the SiO layer of 226nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the SiO layer of 166nm thickness, the Ge layer of 92nm thickness, the Ge layer of the SiO layer of 222nm thickness, 102nm thickness, the Ge layer of the SiO layer of 277nm thickness, 135nm thickness, the Ge layer of the SiO layer of 150nm thickness, 55nm thickness and the SiO layer of 150nm thickness.

Claims

1. the aviation tail gas gas of a centre wavelength 2700nm detects optical filter, comprise and take Ge as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 96nm thickness, the SiO layer of 304nm thickness, the Ge layer of 132nm thickness, the SiO layer of 159nm thickness, the Ge layer of 82nm thickness, the SiO layer of 338nm thickness, the Ge layer of 140nm thickness, the SiO layer of 339nm thickness, the Ge layer of 137nm thickness, the SiO layer of 349nm thickness, the Ge layer of 70nm thickness, the SiO layer of 169nm thickness, the Ge layer of 136nm thickness, the SiO layer of 343nm thickness, the Ge layer of 149nm thickness, the SiO layer of 473nm thickness, the Ge layer of 232nm thickness, the SiO layer of 668nm thickness, the Ge layer of 103nm thickness and the SiO layer of 226nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the SiO layer of 166nm thickness, the Ge layer of 92nm thickness, the Ge layer of the SiO layer of 222nm thickness, 102nm thickness, the Ge layer of the SiO layer of 277nm thickness, 135nm thickness, the Ge layer of the SiO layer of 150nm thickness, 55nm thickness and the SiO layer of 150nm thickness.