CN103378274A - Light-emitting device and manufacturing method thereof - Google Patents
Light-emitting device and manufacturing method thereof Download PDFInfo
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- CN103378274A CN103378274A CN2012101284567A CN201210128456A CN103378274A CN 103378274 A CN103378274 A CN 103378274A CN 2012101284567 A CN2012101284567 A CN 2012101284567A CN 201210128456 A CN201210128456 A CN 201210128456A CN 103378274 A CN103378274 A CN 103378274A
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Abstract
The invention discloses a light-emitting device and a manufacturing method of the light-emitting device. The light-emitting device comprises a substrate, a light emitting diode grain, a first light-pervious layer, a light wavelength conversion layer and a second light-pervious layer. The substrate is provided with a grain attachment portion, the light emitting diode grain is arranged on the grain attachment portion, the substrate is provided with a base, and the base is made of light-pervious materials. The first light-pervious layer covers the side face of the light emitting diode grain, the light wavelength conversion layer evenly covers the first light-pervious layer and the light emitting diode grain, and the second light-pervious layer covers the light wavelength conversion layer.
Description
Technical field
The present invention relates to a kind of light-emitting device and manufacture method thereof, particularly being applicable to base is light-emitting device and the manufacture method thereof of the LED crystal particle of light-transmitting materials.
Background technology
At present one of common led technology is for using blue light-emitting diode to excite yellow fluorescent powder to reach the light mixing effect of optical color, and the performance of this its optical property of technology is affected by the situation of fluorescent powder coating in the potted element processing procedure of light-emitting diode then deeply.
Please refer to Fig. 1, it is a kind of schematic diagram of existing light-emitting device, and light-emitting device 1 comprises substrate 11, LED crystal particle 12, crystal grain and sticks together section 13, phosphor powder layer 14 and cover layer 15.Wherein crystal grain sticks together section 13 and is arranged at substrate 11 central authorities, and LED crystal particle 12 is installed in crystal grain and sticks together in the section 13, and phosphor powder layer 14 covers side and the upper surface of LED crystal particle 12, and cover layer 15 is covered in phosphor powder layer 14 tops.
Because the geometrical relationship restriction (for example right angle contact relation) that the side of the material behavior of phosphor powder layer 14 (liquid surface tension etc.) and LED crystal particle 12 and the installing contact-making surface that crystal grain sticks together section 13 exist, the part that makes phosphor powder layer 14 be covered in LED crystal particle 12 sides has inhomogeneous thickness distribution, this inhomogeneous thickness distribution will cause the characteristic behind the optical color mixed light not good, and then produce the phenomenon of tinge when the lamp applications of other rear end.
Have in the inhomogeneous thickness distribution situation in LED crystal particle 12 sides at phosphor powder layer 14, can make the front light beam different by the light path length of phosphor powder layer 14 from the side light beam, mixed light will significantly reduce uniformity and the consistency of light-emitting device 1 its optical color performance uniformly.
Summary of the invention
Because above-mentioned problem, purpose of the present invention is for providing a kind of light-emitting device and manufacture method thereof, and it is applicable to the LED crystal particle that base is light-transmitting materials, and has better optical color uniformity and consistency.
For reaching above-mentioned purpose, it comprises a substrate, a LED crystal particle, one first photic zone, an optical wavelength converting layer and one second photic zone to the invention provides a kind of light-emitting device.Substrate has a crystal grain and sticks together section, and LED crystal particle is arranged at crystal grain and sticks together in the section, and has a base, and base is light-transmitting materials.The first photic zone is covered in the side of LED crystal particle, and optical wavelength converting layer is covered on the first photic zone and the LED crystal particle equably, and the second photic zone is covered on the optical wavelength converting layer.
For reaching above-mentioned purpose, the present invention still provides a kind of manufacture method of light-emitting device, and its step comprises to be provided a substrate, substrate to have a crystal grain to stick together section; One LED crystal particle is arranged at crystal grain sticks together in the section, LED crystal particle has a base, and base is light-transmitting materials; One first photic zone is covered in the side of LED crystal particle; One optical wavelength converting layer is covered on the first photic zone and the LED crystal particle equably; And one second photic zone is covered on the optical wavelength converting layer.
From the above, light-emitting device of the present invention covers the side of LED crystal particle with the first photic zone, make the optical wavelength converting layer of follow-up setting can be covered in a uniform thickness upper surface of the first photic zone and LED crystal particle, allow its side of LED crystal particle and the positive light beam that sends by behind the optical wavelength converting layer, can obtain uniformity and the consistency of good optics light mixing effect and color.
Further, the manufacture method of light-emitting device of the present invention is that the side prior to LED crystal particle forms the first photic zone, allow optical wavelength converting layer can be formed at a uniform thickness upper surface of the first photic zone and LED crystal particle, make from front light beam and side light beam that LED crystal particle is sent and can after by optical wavelength converting layer, obtain good light mixing effect, effectively solve the problem that color is inhomogeneous and consistency is not good behind the mixed light.
Light-emitting device of the present invention and manufacture method thereof are applicable to the LED crystal particle that base is light-transmitting materials.The first photic zone covers the side of LED crystal particle, make optical wavelength converting layer can be covered in uniform thickness the upper surface of the first photic zone and LED crystal particle, allow the light beam that its side of LED crystal particle sends can both are suitable in the path of the optical wavelength converting layer of passing through at the path of the optical wavelength converting layer of passing through and the positive light beam that sends, and then obtain uniformity and the consistency of good optics light mixing effect and color.Compared with prior art, because optical wavelength converting layer can be with uniform thickness coating, so solved the not good problem of color uniformity and consistency, and the tinge phenomenon that produces behind other optical lens in collocation of light-emitting device, base because of LED crystal particle uses the light transmission material in addition, has more competitive advantage at production cost than the LED crystal particle of using non-light transmittance material base.
Description of drawings
Fig. 1 is a kind of schematic diagram of existing light-emitting device;
Fig. 2 is the schematic diagram of a kind of light-emitting device of preferred embodiment of the present invention;
Fig. 3 A to Fig. 3 B is grainiess and the version schematic diagram of LED crystal particle of the present invention;
Fig. 4 A to Fig. 4 C is the version schematic diagram that the first photic zone of the present invention is covered in LED crystal particle;
Fig. 5 A to Fig. 5 C is the of the present invention second euphotic version schematic diagram; And
Fig. 6 is the manufacture method flow chart of a kind of light-emitting device of preferred embodiment of the present invention.
Wherein, description of reference numerals is as follows:
1,2: light-emitting device
11,21: substrate
12,22,22a: LED crystal particle
13,211: crystal grain sticks together section
14: phosphor powder layer
15: cover layer
212,213: electrode connecting parts
214,221: the first electrodes
215,224: the second electrodes
216: catoptric arrangement
222: base
223: epitaxial loayer
23,23a, 23b: the first photic zone
24,24a, 24b: optical wavelength converting layer
25,25a, 25b: the second photic zone
A: front light beam
B: side light beam
S01～S05: step
Embodiment
Hereinafter with reference to correlative type, a kind of light-emitting device and manufacture method thereof according to preferred embodiment of the present invention are described, wherein identical element will be illustrated with identical reference marks.
Please refer to Fig. 2, it is the schematic diagram according to a kind of light-emitting device of preferred embodiment of the present invention.Light-emitting device 2 comprises a substrate 21, a LED crystal particle 22, one first photic zone 23, an optical wavelength converting layer 24 and one second photic zone 25.Wherein substrate 21 has a crystal grain and sticks together section 211, it is positioned at the centre of substrate 21 upper surfaces, LED crystal particle 22 is arranged at crystal grain and sticks together in the section 211, the first photic zone 23 is covered in side and the top of LED crystal particle 22, optical wavelength converting layer 24 is covered on the first photic zone 23 with uniform thickness, and the second photic zone 25 is covered on the optical wavelength converting layer 24.
Please refer to shown in Fig. 3 A and Fig. 3 B, it is the version schematic diagram of the grainiess of LED crystal particle 22 of the present invention.Wherein for ease of showing and explanation, may not be inconsistent with the practical structures ratio, in this for reference only but not be restricted.The variation that can elect according to the follow-up light fixture demand that reality is used of the grainiess of LED crystal particle 22 of the present invention.Example as shown in Figure 3A, LED crystal particle 22 also has one first electrode 221, a base 222, an epitaxial loayer 223 and one second electrode 224.Wherein the first electrode 221 and the second electrode 224 all are arranged at the lower surface of epitaxial loayer 223, and this structure is covered crystalline substance (flip chip) grainiess for covering crystalline substance or class, and preferred embodiment of the present invention is covering the Jingjing kernel structure as example, yet it is non-for limiting.
Shown in Fig. 3 B, in other embodiment, LED crystal particle 22a more can be horizontal (horizontal) grainiess, that is the first electrode 221 and the second electrode 224 all are arranged at epitaxial loayer 223 upper surfaces.LED crystal particle 22a sticks together by base 222 and is fixed in crystal grain and sticks together section 211 tops.
Please refer to shown in Fig. 4 A to Fig. 4 C, it is covered in the version schematic diagram of LED crystal particle for the first photic zone of the present invention, wherein for ease of showing and explanation that subelement is not shown in wherein, in this for reference only but not be restricted.The first photic zone 23 of the present invention is covered in the side of LED crystal particle 22, yet and non-limiting its form with cover kenel, can do collocation according to the demand of reality and change.Shown in Fig. 4 A, the first photic zone 23 is covered on the LED crystal particle 22, and be covered in simultaneously the side of LED crystal particle 22 with triangle or the leg-of-mutton section shape of class, optical wavelength converting layer 24 is covered in the top of the first photic zone 23 with uniform thickness in addition.
Shown in Fig. 4 B, the first photic zone 23a is take the upper surface of the side of LED crystal particle 22 and substrate 21 as the border, forming section is the side that triangle or the leg-of-mutton shape of class are covered in LED crystal particle 22, and this moment, optical wavelength converting layer 24a was covered in the top of the first photic zone 23a and LED crystal particle 22 with uniform thickness.
Shown in Fig. 4 C, the first photic zone 23b is take the bottom surface of its outer surface and LED crystal particle 22 as the border, forming section is side and the upper surface that shape trapezoidal or that class is trapezoidal is covered in LED crystal particle 22, and optical wavelength converting layer 24b similarly is covered in the first photic zone 23b top with uniform thickness.In addition, the first photic zone is mixture, macromolecular material, glass or other light-permeable material of silica gel, epoxy resin, silica gel and epoxy resin, and optical wavelength converting layer has more the light wavelength conversion particle, and it is yttrium-aluminium-garnet (YAG) fluorescent material, silicate (Silicate) fluorescent material, terbium aluminium garnet (TAG) fluorescent material, oxide fluorescent powder, Nitride phosphor, aluminum oxide fluorescent material, other can be for fluorescent material or the material of light wavelength conversion.
Please refer again to simultaneously shown in Fig. 3 A to Fig. 3 B, because base 222 is light-transmitting materials, so can produce simultaneously positive light beam A and side light beam B when LED crystal particle 22 is luminous, this moment is by being covered in the first photic zone 23 first side and the upper surface of LED crystal particle 22, make the optical wavelength converting layer 24 of follow-up setting can be covered in uniform thickness the top of the first photic zone 23 and LED crystal particle 22, make positive light beam A and side light beam B suitable by the optical path length energy of optical wavelength converting layer 24, solve prior art because of the crawling of phosphor powder layer (optical wavelength converting layer) thickness, cause positive light beam A and side light beam B to differ very large by the optical path length of optical wavelength converting layer, the problem that the color uniformity that produces and consistency are not good, and then reach good light mixing effect.Overcome simultaneously the issuable tinge problem of other secondary optical lens of follow-up collocation, further, base 222 use light-transmitting materials because of LED crystal particle 22 of the present invention, LED crystal particle compared to using non-light-transmitting materials (for example carborundum or copper) base has more the competitive advantage on the grain material cost.
Please refer to shown in Fig. 5 A to Fig. 5 C, it is the version schematic diagram of the second photic zone 25 of the present invention.At first chat and bright be, substrate 21 also can have a catoptric arrangement 216, it is positioned at the both sides of substrate 21 upper surfaces, do further optically focused or astigmatism depending on the light that LED crystal particle 22 is sent in the user demand of light-emitting device 2 reality, in other embodiment, also catoptric arrangement can be set, perhaps can change its shape form, preferred embodiment of the present invention does not arrange catoptric arrangement, yet it is non-in order to limit the present invention.
The second photic zone 25 is covered on the optical wavelength converting layer 24, right also non-limiting its form and covering external form, same the first photic zone 23 its kenels that cover LED crystal particle 22 also are like this, can be according to the user demand of reality such as being that astigmatism, optically focused or far throw are penetrated etc., or be to do variation according to the light fixture purposes of follow-up collocation.Shown in Fig. 5 A, the second photic zone 25 is male type, and the second photic zone 25a shown in Fig. 5 B is plane, and the second photic zone 25b shown in Fig. 5 C then is inner concave shape.In addition, the second photic zone 25～25b is consisted of by silica gel, epoxy resin, silica gel and epoxy resin composition, macromolecular material, glass or other light-permeable material, elements such as the first photic zone 23, optical wavelength converting layer 24～24b and LED crystal particle 22 among the figure again, has identical technical characterictic with the elements such as the first photic zone 23～23b, optical wavelength converting layer 24 and LED crystal particle 22 of Fig. 4 A to Fig. 4 C, so locate no longer to narrate its technology contents.
Please refer to Fig. 6, it is the manufacture method flow chart of a kind of light-emitting device 2 of preferred embodiment of the present invention, and the manufacture method of present embodiment comprises that step S01 is to step S05.
Please be simultaneously with reference to Fig. 2, at first step S01 provides a substrate 21, and substrate 21 has a crystal grain and sticks together section 211, and crystal grain sticks together the centre that section 211 is positioned at substrate 21 upper surfaces.Wherein substrate 21 has more two electrode connecting parts 212 and 213,1 first electrode 214 and one second electrode 215, electrode connecting parts 212 and 213 is arranged in substrate 21, respectively the first electrode 214 and the second electrode 215 are electrically connected to the lower surface of substrate 21, the material used of substrate 21 can be aluminium oxide, aluminium nitride, carborundum, silicon substrate, copper metal and alloy, aluminum metal and alloy thereof, metal core printed circuit board (PCB), glass-epoxy substrate or ceramic material etc. in addition.
Please more simultaneously with reference to Fig. 3 A, step S02 is arranged at crystal grain with a LED crystal particle 22 and sticks together in the section 211, and LED crystal particle 22 has a base 222, and base 222 is the light-transmitting materials such as sapphire, aluminium oxide, glass, silicon dioxide or carborundum.Wherein LED crystal particle 22 also has the lower surface that one first electrode 221, one second electrode 224 and epitaxial loayer 223, the first electrodes 221 and the second electrode 224 are located on epitaxial loayer 223, and base 222 is positioned at epitaxial loayer 223 tops.
Then, step S03 is covered in one first photic zone 23 side of LED crystal particle 22.Wherein the first photic zone 23 uses gluing process, wire mark technique, spraying coating process, depositing operation, mould-forming process or other overlayable mode, be covered in the side of LED crystal particle 22 with triangle or the leg-of-mutton shape of class, the material used of the first photic zone 23 is mixture, macromolecular material, glass or other light-permeable material of silica gel, epoxy resin, silica gel and epoxy resin in addition.
Then, step S04 is covered in an optical wavelength converting layer 24 on the first photic zone 23 and the LED crystal particle 22 equably, wherein optical wavelength converting layer 24 takes shape on the first photic zone 23 and the LED crystal particle 22 with uniform thickness with gluing process, wire mark technique, spraying coating process, depositing operation, mould-forming process or other overlayable mode.In addition, optical wavelength converting layer 24 has more the light wavelength conversion particle, and its material is yttrium aluminium garnet fluorescent powder, silicate fluorescent powder, terbium aluminium garnet fluorescent material, oxide fluorescent powder, Nitride phosphor, aluminum oxide fluorescent material, other can be for fluorescent material or the material of light wavelength conversion.
At last, step S05 is covered in one second photic zone 25 on the optical wavelength converting layer 24.Wherein the second photic zone 25 takes shape on the optical wavelength converting layer 24 with gluing process, wire mark technique, spraying coating process, depositing operation, mould-forming process or other overlayable mode, and the shape of moulding can be male type, plane or inner concave shape.In addition, the material of the second photic zone 25 is silica gel, epoxy resin, silica gel and epoxy resin composition, macromolecular material, glass or other light-permeable material.
Shown in Fig. 4 A to Fig. 4 C, it is the coverage mode form schematic diagram that the first photic zone is covered in LED crystal particle, the first photic zone 23 of the present invention forms in the side of LED crystal particle 22 and covers, yet and non-limiting its form and molding mode, mode and the form of same the second photic zone 25 its moulding also can be with reference to shown in Fig. 5 A to Fig. 5 C, can do suitably to change according to actual demand, in addition for ease of showing and explanation, subelement is not shown in wherein, in this for reference only but not be restricted.
Shown in Fig. 4 A, the first photic zone 23 is covered on the LED crystal particle 22, and be covered in simultaneously the side of LED crystal particle 22 with triangle or the leg-of-mutton section shape of class, this moment, optical wavelength converting layer 24 was covered in the first photic zone 23 tops with uniform thickness.
Shown in Fig. 4 B, the first photic zone 23a is take the upper surface of the side of LED crystal particle 22 and substrate 21 as the border, forming section is the side that triangle or the leg-of-mutton shape of class are covered in LED crystal particle 22, and optical wavelength converting layer 24a is covered in the top of the first photic zone 23 and LED crystal particle 22 with uniform thickness.
Shown in Fig. 4 C, the first photic zone 23b is take the bottom surface of its outer surface and LED crystal particle 22 as the border, forming section is side and the upper surface that shape trapezoidal or that class is trapezoidal is covered in LED crystal particle 22, and optical wavelength converting layer 24b is covered in the first photic zone 23b top with uniform thickness equally in addition.
The above only is illustrative, but not is restricted.Anyly do not break away from spirit of the present invention and category, and to its equivalent modifications of carrying out or change, all should be contained in the appending claims restricted portion.
Claims (24)
1. light-emitting device, it comprises:
One substrate has a crystal grain and sticks together section;
One LED crystal particle, it is arranged at this crystal grain and sticks together in the section, and this LED crystal particle has a base, and this base is light-transmitting materials;
One first photic zone, it is covered in the side of this LED crystal particle;
One optical wavelength converting layer, it is covered on this first photic zone and this LED crystal particle equably; And
One second photic zone, it is covered on this optical wavelength converting layer.
2. light-emitting device as claimed in claim 1, wherein the material of this substrate is aluminium oxide, aluminium nitride, carborundum, silicon substrate, copper metal and alloy, aluminum metal and alloy thereof, metal core printed circuit board (PCB), glass-epoxy substrate or ceramic material.
3. light-emitting device as claimed in claim 1, wherein this substrate also has one first electrode, one second electrode and an electrode connecting parts, wherein this first electrode and this second electrode are arranged on this substrate, be positioned at the both sides that this crystal grain sticks together section, and be electrical connected with this LED crystal particle, this electrode connecting parts wears this substrate, respectively this first electrode and this second electrode are electrically connected to the lower surface of this substrate.
4. light-emitting device as claimed in claim 1, wherein this LED crystal particle is horizontal configuration, flip chip structure or class flip chip structure.
5. light-emitting device as claimed in claim 1, wherein this base is sapphire, aluminium oxide, glass or carborundum.
6. light-emitting device as claimed in claim 1, wherein this first photic zone is covered on this LED crystal particle, and is covered in simultaneously the side of this LED crystal particle with triangle or the leg-of-mutton section shape of class.
7. light-emitting device as claimed in claim 1, wherein this first photic zone is take the upper surface of the side of this LED crystal particle and this substrate as the border, and forming section is the side that triangle or the leg-of-mutton shape of class are covered in this LED crystal particle.
8. light-emitting device as claimed in claim 1, wherein this first photic zone is take the bottom surface of its outer surface and this LED crystal particle as the border, and forming section is this side and the upper surface that shape trapezoidal or that class is trapezoidal is covered in this light-emitting diode.
9. light-emitting device as claimed in claim 1, wherein this first photic zone also is covered on this LED crystal particle.
10. light-emitting device as claimed in claim 1, wherein this first photic zone is silica gel, epoxy resin, silica gel and epoxy resin composition or glass.
11. light-emitting device as claimed in claim 1, wherein this optical wavelength converting layer also has the light wavelength conversion particle.
12. light-emitting device as claimed in claim 11, wherein this light wavelength conversion particle is that yttrium aluminium garnet fluorescent powder, silicate fluorescent powder, terbium aluminium garnet fluorescent material, oxide fluorescent powder, Nitride phosphor, aluminum oxide fluorescent material maybe can be for fluorescent material or the materials of light wavelength conversion.
13. light-emitting device as claimed in claim 1, wherein this second photic zone is silica gel, epoxy resin, silica gel and epoxy resin composition or glass.
14. light-emitting device as claimed in claim 1, wherein this second photic zone is male type, plane or inner concave shape.
15. light-emitting device as claimed in claim 1, wherein the luminous of this LED crystal particle is visible light or invisible light.
16. light-emitting device as claimed in claim 1, wherein this substrate has a catoptric arrangement, and this catoptric arrangement is positioned at the side of the upper surface of this substrate.
17. the manufacture method of a light-emitting device, it comprises step:
One substrate is provided, and this substrate has a crystal grain and sticks together section;
One LED crystal particle is arranged at this crystal grain sticks together in the section, this LED crystal particle has a base, and this base is light-transmitting materials;
One first photic zone is covered in the side of this LED crystal particle;
One optical wavelength converting layer is covered on this first photic zone and this LED crystal particle equably; And
One second photic zone is covered on this optical wavelength converting layer.
18. manufacture method as claimed in claim 17, wherein this first photic zone also is covered on this LED crystal particle, and is covered in simultaneously the side of this LED crystal particle with triangle or the leg-of-mutton section shape of class.
19. manufacture method as claimed in claim 17, wherein this first photic zone is take the upper surface of the side of this LED crystal particle and this substrate as the border, and forming section is the side that triangle or the leg-of-mutton shape of class are covered in this LED crystal particle.
20. manufacture method as claimed in claim 17, wherein this first photic zone is take the bottom surface of its outer surface and this LED crystal particle as the border, and forming section is this side and the upper surface that shape trapezoidal or that class is trapezoidal is covered in this light-emitting diode.
21. manufacture method as claimed in claim 17, wherein this first photic zone also is covered on this LED crystal particle.
22. manufacture method as claimed in claim 17, wherein this first photic zone is with gluing process, wire mark technique, spraying coating process, depositing operation or mould-forming process moulding.
23. manufacture method as claimed in claim 17, wherein this optical wavelength converting layer with gluing process, wire mark technique, spraying coating process, depositing operation or mould-forming process to be covered in equably the mode moulding on this light-emitting diode and this first light-transmitting materials layer.
24. manufacture method as claimed in claim 17, wherein this second photic zone is covered in mode moulding on this optical wavelength converting layer with gluing process, wire mark technique, spraying coating process, depositing operation or mould-forming process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101284567A CN103378274A (en) | 2012-04-27 | 2012-04-27 | Light-emitting device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101284567A CN103378274A (en) | 2012-04-27 | 2012-04-27 | Light-emitting device and manufacturing method thereof |
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| CN103378274A true CN103378274A (en) | 2013-10-30 |
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| CN2012101284567A Pending CN103378274A (en) | 2012-04-27 | 2012-04-27 | Light-emitting device and manufacturing method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023991A (en) * | 2014-04-30 | 2015-11-04 | 程君 | Method of manufacturing LED laminated circuit board based on inorganic substance |
| CN105355759A (en) * | 2015-12-11 | 2016-02-24 | 江苏鸿佳电子科技有限公司 | Single-side light emission package LED |
| CN105374925A (en) * | 2014-08-22 | 2016-03-02 | 严敏 | Inorganic substance-based LED epitaxy lamination circuit board and preparation method thereof |
| CN108011014A (en) * | 2016-11-01 | 2018-05-08 | 日亚化学工业株式会社 | Light-emitting device and its manufacture method |
| CN108533990A (en) * | 2018-02-01 | 2018-09-14 | 陈广明 | Low-cost lamp cup |
| CN109075232A (en) * | 2016-05-02 | 2018-12-21 | Lg 伊诺特有限公司 | Semiconductor component packing |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
| KR20080041818A (en) * | 2006-11-08 | 2008-05-14 | 엘지전자 주식회사 | Lens and led package having the same |
| CN102104107A (en) * | 2009-12-22 | 2011-06-22 | 株式会社东芝 | Light emitting device |
| WO2011096126A1 (en) * | 2010-02-05 | 2011-08-11 | 旭硝子株式会社 | Substrate for mounting light-emitting element, and light-emitting device |
| CN102227012A (en) * | 2011-06-28 | 2011-10-26 | 复旦大学 | White light LED with uniform color temperature and high color rendering performance |
-
2012
- 2012-04-27 CN CN2012101284567A patent/CN103378274A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
| KR20080041818A (en) * | 2006-11-08 | 2008-05-14 | 엘지전자 주식회사 | Lens and led package having the same |
| CN102104107A (en) * | 2009-12-22 | 2011-06-22 | 株式会社东芝 | Light emitting device |
| WO2011096126A1 (en) * | 2010-02-05 | 2011-08-11 | 旭硝子株式会社 | Substrate for mounting light-emitting element, and light-emitting device |
| CN102227012A (en) * | 2011-06-28 | 2011-10-26 | 复旦大学 | White light LED with uniform color temperature and high color rendering performance |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023991A (en) * | 2014-04-30 | 2015-11-04 | 程君 | Method of manufacturing LED laminated circuit board based on inorganic substance |
| CN105023991B (en) * | 2014-04-30 | 2018-02-23 | 环视先进数字显示无锡有限公司 | A kind of manufacture method of the LED laminated circuit boards based on inorganic matter |
| CN105374925A (en) * | 2014-08-22 | 2016-03-02 | 严敏 | Inorganic substance-based LED epitaxy lamination circuit board and preparation method thereof |
| CN105374925B (en) * | 2014-08-22 | 2018-07-13 | 无锡极目科技有限公司 | A kind of LED epitaxial growth laminated circuit board and preparation method thereof based on inorganic matter |
| CN105355759A (en) * | 2015-12-11 | 2016-02-24 | 江苏鸿佳电子科技有限公司 | Single-side light emission package LED |
| CN109075232A (en) * | 2016-05-02 | 2018-12-21 | Lg 伊诺特有限公司 | Semiconductor component packing |
| CN109075232B (en) * | 2016-05-02 | 2021-06-15 | Lg 伊诺特有限公司 | Semiconductor element package |
| CN108011014A (en) * | 2016-11-01 | 2018-05-08 | 日亚化学工业株式会社 | Light-emitting device and its manufacture method |
| CN108533990A (en) * | 2018-02-01 | 2018-09-14 | 陈广明 | Low-cost lamp cup |
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Application publication date: 20131030 |