CN102868087A - Laser device - Google Patents

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Publication number
CN102868087A
CN102868087A CN2012103717106A CN201210371710A CN102868087A CN 102868087 A CN102868087 A CN 102868087A CN 2012103717106 A CN2012103717106 A CN 2012103717106A CN 201210371710 A CN201210371710 A CN 201210371710A CN 102868087 A CN102868087 A CN 102868087A
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Prior art keywords
grating
laser
laser according
wavelength
laser device
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CN2012103717106A
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Chinese (zh)
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金鹏
马龙
林杰
谭久彬
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Harbin Institute of Technology
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Harbin Institute of Technology
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Abstract

The invention relates to a laser device and particularly relates to a sub-wavelength focusing laser device which is integrated with a grating-Fresnel composite structure on the end surface, belonging to the cross technical field of micro-nano optics, application optics and diffraction optics. The laser device comprises a semiconductor laser device and a light beam shaping structure processed on the end surface, and the end surface comprises a microstructure so as to constitute the grating-Fresnel lens composite structure. The laser device has the characteristics of small volume and high degree of integration, simultaneously has the effect of far-field implementation of super-resolution and long-focal-depth focusing, has the anti-wavelength perturbation capability, and can realize a bandpass function and eliminate the influence of non-target wavelength.

Description

A kind of laser
Technical field
The invention belongs to micronano optical, Application Optics and diffraction optics interleaving techniques field, relate generally to a kind of laser, especially the outgoing end face is integrated with the semiconductor laser of the sub-wavelength focusing of grating-Fresnel Lenses composite construction.
Background technology
Have the semiconductor laser of outgoing beam self-focusing function in optical storage, laser processing and light probe fields of measurement have the important application prospect.
The people such as the Nanfang Yu of Harvard University have processed asymmetric golden film with binary periodic grooves structure in a side of quantum cascade laser outgoing end face, so that the angle of divergence of infrared band laser significantly reduces.
The people such as the Dibyendu Dey of Northwest University quantum laser device outgoing end face integrated metal-dielectric-metal structure, realized the focal beam spot of 4000 times of incident intensities in the outgoing end face surface.Because focal length only has tens nanometers, can not satisfy the demand that the far field focuses on.
The people such as the Chuan Yang of the state university in Pennsylvania realize that with sawtooth pattern grating-Fresnel hybrid lens design sub-wavelength focuses on and the light splitting function in light path system, and hybrid lens adopts BK7 glass to make.Because point-source of light is adopted in design, be not suitable for laser integratedly, and its type of focusing is from shaft type.
Summary of the invention
The invention provides a kind of sub-wavelength laser focusing device of high integration.The object of the present invention is achieved like this:
A kind of laser comprises the laser emitting end face, it is characterized in that: the outgoing end face is the composite construction of grating and Fresnel Lenses.
Preferably: described grating is circular grating.
In above-mentioned arbitrary scheme preferably: the described grating cycle is 0.5~5 times of optical maser wavelength.
In above-mentioned arbitrary scheme preferably: described grating is made by semi-conducting material.
In above-mentioned arbitrary scheme preferably: described semi-conducting material is a kind of in silicon, silicon nitride, GaAs or the gallium nitride.
In above-mentioned arbitrary scheme preferably: described grating is made by metal material.
In above-mentioned arbitrary scheme preferably: described metal material is a kind of in gold, silver, aluminium or the titanium.
In above-mentioned arbitrary scheme preferably: described grating is a kind of in groove structure, narrow slit structure, narrow slit structure or the broached-tooth design.
In above-mentioned arbitrary scheme preferably: described Fresnel Lenses is the light transmission medium material at service band.
In above-mentioned arbitrary scheme preferably: described light transmission medium material is silicon dioxide, melt a kind of in quartz or the polymethyl methacrylate.
In above-mentioned arbitrary scheme preferably: described Fresnel Lenses for the surface be the lens of continuous relief structure or binary ledge structure or many ledge structures.
In above-mentioned arbitrary scheme preferably: described Fresnel Lenses is concentric structure or parallel construction.
In above-mentioned arbitrary scheme preferably: described laser is semiconductor laser.
In above-mentioned arbitrary scheme preferably: also comprise laserresonator, the outgoing end face is the outer surface of laserresonator.
This paper adopts the grating double-decker different from lens material, proposes the sub-wavelength laser focusing device that the outgoing end face is integrated with grating-Fresnel composite construction.The present invention can realize that the far field sub-wavelength focuses at optical axis.According to default focus design Fresnel Lenses, grating cycle and operation wavelength are complementary, by the optimal design to grating thickness and duty ratio, in low depth-to-width ratio processing request, obtain preferably focusing effect.Select the common silicon of IC technique and silicon dioxide as the integrated material of end face composite construction, make between the integrated circuit fabrication technique of double-deck micro-optical element processing method and standard and have good processing compatibility, thereby realize the integrated of composite construction and semiconductor laser, the integrated laser device that obtains having the beam shaping ability.The laser integral structure, can so that this laser at laser direct-writing, light probe detects, the aspects such as data storage have good effect.
The invention has the beneficial effects as follows: because the present invention has adopted the semiconductor laser that is processed with the composite construction of grating, Fresnel Lenses on the outgoing end face, according to the scattering of grating to the raising effect of equivalent numerical aperture and Fresnel Lenses to the effect of converging of light, therefore have the characteristics that volume is little, integrated level is high; Realized that far field super-resolution, long depth of focus focus on; Have anti-wavelength disturbance ability, can realize the logical function of band, eliminate the impact of non-target wavelength.
Description of drawings
Fig. 1 is according to grating in the preferred embodiment of sub-wavelength laser focusing device of the present invention-Fresnel Lenses composite construction schematic diagram.
Fig. 2 is the sub-wavelength laser focusing device structural representation that middle end face embodiment illustrated in fig. 1 is integrated with grating-Fresnel composite construction.
Fig. 3 is that medium wavelength embodiment illustrated in fig. 1 is that the light of 500nm focuses on as a result figure through grating-Fresnel Lenses composite construction.
Fig. 4 is that medium wavelength embodiment illustrated in fig. 1 is after the light of 500nm focuses on through grating-Fresnel Lenses composite construction, at the intensity distribution of X-axis and Y direction.
Fig. 5 be embodiment illustrated in fig. 1 in relatively halfwidth and wavelength concern schematic diagram.
Among the figure: 1. Fresnel Lenses, 2. grating, 3. laser, the 4. silicon dioxide between outgoing end face and the composite construction.
Embodiment
At wavelength
Figure 2012103717106100002DEST_PATH_IMAGE001
Laser
3 outgoing end faces processing grating-Fresnel Lenses composite construction.
(1) is integrated with circular grating 2 at the laser emitting end face.
In laser emitting end face deposition layer of silicon dioxide 4, etching obtains ring-type silicon dioxide 4 first; Depositing silicon on silicon dioxide 4 obtains silicon grating 2.
(2) 2 cycles of circular grating , the grating duty ratio
Figure DEST_PATH_IMAGE005
=50%, i.e. s=500 Nm, laser 3 outgoing end face diameters
Figure DEST_PATH_IMAGE007
=50
Figure DEST_PATH_IMAGE009
(3) above-mentioned grating 2 utilizes the silicon preparation.
(4) above-mentioned grating 2 is groove structure, the thickness of silicon grating 2
Figure DEST_PATH_IMAGE011
=250 Nm, h1=125 Nm
(5) Fresnel Lenses 1 utilizes silicon dioxide preparation, h2=375 Nm,
Figure DEST_PATH_IMAGE013
=15 , n=1.5.
Chemical polishing is carried out on silicon grating 2 surfaces; Deposition of silica on silicon grating 2 planes obtains Fresnel Lenses 1 through over etching.
To the raising effect of equivalent numerical aperture and the effect of converging of 1 pair of light of Fresnel Lenses, the light of laser 3 outgoing can realize that by composite construction the far field sub-wavelength focuses on according to the scattering of grating 2.By the optimal design to micro optical element, 2 cycles of grating and operation wavelength are complementary, according to default focus design Fresnel Lenses 1, adjust grating 2 thickness and duty ratio, when satisfying low depth-to-width ratio design, obtain preferably focusing effect.Select the common silicon of IC technique and silicon dioxide as the integrated material of end face composite construction, because processing technology and the IC processing technology compatibility of said elements are fine, thereby can be with 1 two kinds of micro-structurals processing of grating 2 and Fresnel Lenses on laser 3 outgoing end faces, thereby obtain the sub-wavelength laser focusing device of high integration.And the refractive index imaginary part of silicon is almost nil at visible light wave range, increases at ultraviolet band, thereby light wave is had low-pass effect.
Grating is made by semi-conducting material, is preferably one or more the combination in silicon, silicon dioxide, silicon nitride, GaAs or the gallium nitride
In the preferred technical scheme of another kind, grating can be made of metal, and metal can be one or more the combination in gold, silver, aluminium or the titanium.
Fresnel Lenses is preferably the light transmission medium material and consists of, and is preferably silicon dioxide, melts a kind of in quartz or the polymethyl methacrylate.
Being the 500nm incident light to wavelength shows through the simulation study of grating-Fresnel Lenses composite construction, and as shown in Figure 3, the maximum intensity of focus is 16.572 times of incident intensity, and focal length is 14.871
Figure DEST_PATH_IMAGE017
, halfwidth is 238nm, the inferior position of first-order diffraction level is
Figure DEST_PATH_IMAGE019
7.9301
Figure 297970DEST_PATH_IMAGE009
Find out from the result, composite construction has the function of light splitting and focusing simultaneously.When light by grating 2, the intensity of first-order diffraction level time is significantly less than the intensity of 0 order diffraction level time.According to grating equation, the inferior angle of divergence of first-order diffraction level is 30 degree.According to the focal length that emulation obtains, substitution calculates, and first order of diffraction is inferior in the position of x direction to be
Figure 778892DEST_PATH_IMAGE020
8.66
Figure 558629DEST_PATH_IMAGE009
Result's contrast with Finite Difference-Time Domain separating method (FDTD) emulation of passing through electromagnetic field, exist the reason of slightly difference to be that the degree of approximation of on sub-wavelength dimensions grating equation and fresnel formula reduces, diffraction optics replaces gradually the geometric optics correlation theory and accounts for leading role.
The laser 3 that the designed end face of this paper is processed with composite construction has certain anti-wavelength disturbance ability.Obtain near the incident light of other wavelength of target wavelength by the result of grating-Fresnel Lenses composite construction by Finite Difference-Time Domain separating method (FDTD) emulation, table 1 is 470nm, 480nm, 490nm, 500nm, 510nm, 520nm, the incident light of 530nm wavelength is by largest light intensity, focal length, depth of focus and the halfwidth of designed composite construction, and this paper is defined as focus along 2 distance of y axle largest light intensity value 1/2 to depth of focus.Here defining relative halfwidth is FWHM/
Figure DEST_PATH_IMAGE022
, result of calculation as shown in Figure 4.
The focusing situation of the incident light of table 1 different wave length
Wavelength (nanometer) Largest light intensity Focal length (micron) Depth of focus (micron) Halfwidth (nanometer) Relative halfwidth
470 15.28 16.26 0.86 221 0.47
480 13.95 15.66 0.81 215 0.45
490 19.24 15.10 0.79 217 0.44
500 26.36 14.57 0.78 220 0.44
510 34.35 14.08 0.78 225 0.44
520 24.92 13.59 0.78 230 0.44
530 14.55 13.12 0.78 233 0.44
Be the incident light of 600nm for wavelength, after grating-Fresnel Lenses composite construction, by Finite Difference-Time Domain separating method (FDTD) emulation, obvious scattering process has occured, incident light is not focusing on through realizing after grating-Fresnel Lenses composite construction.
Be the incident light of 400nm for wavelength, after grating-Fresnel Lenses composite construction, by Finite Difference-Time Domain separating method (FDTD) emulation, although finding back court can realize focusing on, but light spot energy sharply descends, its reason is that silicon is larger to the imaginary part of the refractive index of ultraviolet light wave band, thereby obvious to the absorption of ultraviolet light.
According to the scattering process of low-frequency band and to the absorption of high frequency band, the laser end face composite construction has the logical effect of band to the target wave band.

Claims (10)

1. a laser comprises the laser emitting end face, it is characterized in that: the outgoing end face is the composite construction of grating and Fresnel Lenses.
2. laser according to claim 1, it is characterized in that: described grating is circular grating.
3. laser according to claim 1 and 2, it is characterized in that: the described grating cycle is 0.5~5 times of optical maser wavelength.
4. each described laser according to claim 1-3, it is characterized in that: described grating is made by semi-conducting material.
5. laser according to claim 4 is characterized in that: described semi-conducting material is one or more the combination in silicon, silicon dioxide, silicon nitride, GaAs or the gallium nitride.
6. each described laser according to claim 1-3, it is characterized in that: described grating is made by metal material.
7. laser according to claim 6 is characterized in that: described metal material is a kind of in gold, silver, aluminium or the titanium.
8. laser according to claim 2 is characterized in that: described grating is a kind of in groove structure, narrow slit structure, narrow slit structure or the broached-tooth design.
9. laser according to claim 1, it is characterized in that: described Fresnel Lenses is the light transmission medium material at service band.
10. laser according to claim 9 is characterized in that: described light transmission medium material is silicon dioxide, melt a kind of in quartz or the polymethyl methacrylate.
CN2012103717106A 2012-09-29 2012-09-29 Laser device Pending CN102868087A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016176957A1 (en) * 2015-05-05 2016-11-10 清华大学深圳研究生院 Optimized designing method for making fresnel grating
CN110212404A (en) * 2019-04-17 2019-09-06 深港产学研基地(北京大学香港科技大学深圳研修院) The automobile-used mixing Fresnel Lenses interferometric filter semiconductor laser of intelligence
CN113391498A (en) * 2021-07-09 2021-09-14 嘉兴驭光光电科技有限公司 Laser projection optical device and laser projection module
CN113834439A (en) * 2021-09-15 2021-12-24 清华大学深圳国际研究生院 Fresnel grating micro-lens array, spectrometer and spectrum confocal surface type measuring system
DE102022201340A1 (en) 2022-02-09 2023-08-24 Osram Opto Semiconductors Gmbh Semiconductor laser with radiation guide element
CN117254340A (en) * 2022-08-30 2023-12-19 嘉兴微瑞光学有限公司 Method for preparing laser component and laser
CN117254340B (en) * 2022-08-30 2024-04-30 嘉兴微瑞光学有限公司 Method for preparing laser component and laser

Citations (3)

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US5497269A (en) * 1992-06-25 1996-03-05 Lockheed Missiles And Space Company, Inc. Dispersive microlens
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US20120038918A1 (en) * 2010-08-13 2012-02-16 Zhiwen Liu Compact Spectrometer Including a Diffractive Optical Element with Dual Dispersion and Focusing Functionality

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US5497269A (en) * 1992-06-25 1996-03-05 Lockheed Missiles And Space Company, Inc. Dispersive microlens
US5526338A (en) * 1995-03-10 1996-06-11 Yeda Research & Development Co. Ltd. Method and apparatus for storage and retrieval with multilayer optical disks
US20120038918A1 (en) * 2010-08-13 2012-02-16 Zhiwen Liu Compact Spectrometer Including a Diffractive Optical Element with Dual Dispersion and Focusing Functionality

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016176957A1 (en) * 2015-05-05 2016-11-10 清华大学深圳研究生院 Optimized designing method for making fresnel grating
US10061122B2 (en) 2015-05-05 2018-08-28 Graduate School At Shenzhen, Tsinghua University Optimized design method for manufacturing fresnel grating
CN110212404A (en) * 2019-04-17 2019-09-06 深港产学研基地(北京大学香港科技大学深圳研修院) The automobile-used mixing Fresnel Lenses interferometric filter semiconductor laser of intelligence
CN113391498A (en) * 2021-07-09 2021-09-14 嘉兴驭光光电科技有限公司 Laser projection optical device and laser projection module
CN113834439A (en) * 2021-09-15 2021-12-24 清华大学深圳国际研究生院 Fresnel grating micro-lens array, spectrometer and spectrum confocal surface type measuring system
CN113834439B (en) * 2021-09-15 2023-10-17 清华大学深圳国际研究生院 Fresnel grating micro-lens array, spectrometer and spectrum confocal plane type measuring system
DE102022201340A1 (en) 2022-02-09 2023-08-24 Osram Opto Semiconductors Gmbh Semiconductor laser with radiation guide element
CN117254340A (en) * 2022-08-30 2023-12-19 嘉兴微瑞光学有限公司 Method for preparing laser component and laser
CN117254340B (en) * 2022-08-30 2024-04-30 嘉兴微瑞光学有限公司 Method for preparing laser component and laser

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Application publication date: 20130109