CN102830594B - Exposed out-of-focus SEM (Scanning Electron Microscope) detection device and detection method thereof - Google Patents
Exposed out-of-focus SEM (Scanning Electron Microscope) detection device and detection method thereof Download PDFInfo
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- CN102830594B CN102830594B CN201210335510.5A CN201210335510A CN102830594B CN 102830594 B CN102830594 B CN 102830594B CN 201210335510 A CN201210335510 A CN 201210335510A CN 102830594 B CN102830594 B CN 102830594B
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Abstract
The invention discloses an exposed out-of-focus SEM (Scanning Electron Microscope) detection device. The exposed out-of-focus SEM detection device at least comprises first exposing patterns and second exposing patterns, wherein the first exposing patterns and the second exposing patterns are arranged at intervals, the first exposing patterns are provided with first straight line patterns and first convex patterns which are arranged on the first straight line patterns, the second exposing patterns are provided with second straight line patterns and second convex patterns which are arranged on the second straight line patterns, and preset distance is left between the first convex patterns and the second straight line patterns or the second convex patterns and the first straight line patterns, which are positioned in adjacent space of the first exposing pattern and the second exposing pattern. According to the exposed out-of-focus SEM detection device disclosed by the invention, by arranging convex patterns on the straight line patterns, the exposing sensitiveness is increased, and the offset representing a focusing flat surface is more intuitive as well. According to a detection method disclosed by the invention, the offset of the focusing surface can be accurately and quickly judged through a deformation and adhesion situation of the exposing patterns in fixed points.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly relate to and a kind ofly expose SEM testing fixture out of focus and method thereof.
Background technology
Along with cmos semiconductor technique development and in proportion size reduce, small defect will cause great impact to device performance.So initiatively finding defect and prevent from being in time worse off in the preparation process of semiconductor devices is reduce production cost, ensure the effective way of product quality.
In existing semi-conductor chip manufacture process, litho machine (scanner) is usually used to expose definition circuit figure.But, along with the continuous progress of VLSI (very large scale integrated circuit) technology, the feature sizes (CD) of semiconductor devices is more and more less, process window is also more and more less, then in the process using described photo-etching machine exposal definition circuit figure, easily there is focal plane skew, produce exposure figure adhesion, greatly damage circuit performance, and then cause circuit malfunction.
Normally, in existing photolithographic exposure technique, the size of the wide CD of those skilled in the art's throughput survey line calculates the skew of focal plane.The method of described calculating focal plane skew is only the performance of quantification, and intuitively can not find the state of definition circuit figure.
Therefore for prior art Problems existing, this case designer is by means of being engaged in the industry experience for many years, and active research improves, so had, invention is a kind of exposes SEM testing fixture out of focus and method thereof.
Summary of the invention
The present invention be directed in prior art, the size of traditional wide CD of method throughput survey line calculates the skew of focal plane, the method of described calculating focal plane skew is only the performance of quantification, and intuitively can not find that the defects such as the state of definition circuit figure provide a kind of and expose SEM testing fixture out of focus.
Another object of the present invention is in prior art, the size of traditional wide CD of method throughput survey line calculates the skew of focal plane, the method of described calculating focal plane skew is only the performance of quantification, and intuitively can not find that the defects such as the state of definition circuit figure provide a kind of inspection method exposing SEM testing fixture out of focus.
In order to solve the problem, the invention provides and a kind ofly expose SEM testing fixture out of focus, described exposure SEM testing fixture out of focus comprise spaced at least the first can exposing patterns and second can exposing patterns, described first can have the first straight line image and be arranged on the first protuberance pattern of described first straight line image first side by exposing patterns; Described second can have the second straight line image and is arranged on the second protuberance pattern of described second straight line image first side by exposing patterns; Described first can exposing patterns and described second can exposing patterns adjacent space the first protuberance pattern and described second straight line image or between described second protuberance pattern and described first straight line image, there is predeterminable range, and described predeterminable range is preset according to the different size and live width size that expose focal plane side-play amount in etching technics.
Optionally, the SEM testing fixture that described exposure is out of focus can exposing patterns comprise spaced first further can exposing patterns, second can exposing patterns, 3rd can exposing patterns, and the 4th can exposing patterns, described first can have the first straight line image and is arranged on the first protuberance pattern of described first straight line image first side by exposing patterns, described second can have the second straight line image and is arranged on the second protuberance pattern of described second straight line image first side by exposing patterns, described 3rd can have the 3rd straight line image and is arranged on the 3rd protuberance pattern of described 3rd straight line image first side by exposing patterns, described 4th can have Siping City's vertical element pattern and is arranged on the 4th protuberance pattern of vertical element pattern first side, described Siping City by exposing patterns.
Optionally, the first predeterminable range d can be had between the first protuberance pattern of exposing patterns adjacent space and described second straight line image by exposing patterns and described second described first
1, and described first predeterminable range d
1the side-play amount of corresponding described exposure focal plane is 10nm.
Optionally, the second predeterminable range d can be had between the second protuberance pattern of exposing patterns adjacent space and described 3rd straight line image by exposing patterns and the described 3rd described second
2, and described second predeterminable range d
2the side-play amount of corresponding described exposure focal plane is 20nm.
Optionally, the 3rd predeterminable range d can be had between the 3rd protuberance pattern of exposing patterns adjacent space and described Siping City vertical element pattern by exposing patterns and the described 4th the described 3rd
3, and described 3rd predeterminable range d
3the side-play amount of corresponding described exposure focal plane is 30nm.
Optionally, the SEM testing fixture that described exposure is out of focus can be applicable to the photoetching production technology of less than 0.25 μm and 0.25 μm lines exposure by exposing patterns.
Optionally, described first side is left side.
Optionally, described first side is right side.
For realizing the another object of the present invention, the invention provides a kind of inspection method exposing SEM testing fixture out of focus, the inspection method of the SEM testing fixture that described exposure is out of focus comprises:
Perform step S1: to described exposure SEM testing fixture out of focus can exposing patterns exposure;
Perform step S2: utilize described SEM device check described can figure after exposing patterns exposure, and then judge the size of described focal plane side-play amount;
Perform step S3: exposure sources adjusts.
Optionally, described focal plane side-play amount size by described can exposing patterns exposure after distortion adhesion judge.
Optionally, described can the first protuberance pattern place of exposing patterns deform adhesion time, can judge that described focal plane there occurs 10nm skew.
Optionally, described can the first protuberance pattern of exposing patterns, the second protuberance pattern place deform adhesion time, can judge that described focal plane there occurs 20nm skew.
Optionally, described can the first protuberance pattern, the second protuberance pattern of exposing patterns, and the 3rd protuberance pattern place deform adhesion time, can judge that described focal plane there occurs 30nm skew.
In sum, exposure of the present invention SEM testing fixture out of focus, by arranging protuberance pattern on described straight bar paten, not only increases exposure sensitivity, and the skew characterizing focal plane is more directly perceived.The inspection method of the SEM testing fixture that described exposure is out of focus not only can be fixed a point, accurately, the distortion adhesion situation of exposing patterns the side-play amount of described focal plane can be judged efficiently by described, and to the bad timely process in exposure technology, can enhance productivity, improve product yield.
Accompanying drawing explanation
What Figure 1 shows that the present invention exposes SEM testing fixture out of focus can exposing patterns structural representation;
What Figure 2 shows that the SEM testing fixture that exposure that the present invention enumerates is out of focus can the structural representation of exposing patterns;
Figure 3 shows that the present invention exposes the inspection method process flow diagram of SEM testing fixture out of focus;
Figure 4 shows that the present invention exposes the structural representation that SEM testing fixture out of focus is checked through described focal plane skew 10nm;
Figure 5 shows that the present invention exposes the structural representation that SEM testing fixture out of focus is checked through described focal plane skew 20nm;
Figure 6 shows that the present invention exposes the structural representation that SEM testing fixture out of focus is checked through described focal plane skew 30nm.
Embodiment
By describe in detail the invention technology contents, structural attitude, reached object and effect, coordinate accompanying drawing to be described in detail below in conjunction with embodiment.
Refer to Fig. 1, what Figure 1 shows that the present invention exposes SEM testing fixture out of focus can exposing patterns structural representation.Described can exposing patterns 1 comprise spaced at least the first can exposing patterns 10 and second can exposing patterns 11.Described first can have the first straight line image 101 and is arranged on the first protuberance pattern 102 of described first straight line image 101 first side by exposing patterns 10.Described second can have the second straight line image 111 and is arranged on the second protuberance pattern 112 of described second straight line image 111 first side by exposing patterns 11.Described first can exposing patterns 10 and described second can exposing patterns 11 adjacent space the first protuberance pattern 102 and described second straight line image 111 or between described second protuberance pattern 112 and described first straight line image 101, there is predeterminable range, and described predeterminable range is preset according to the different size and live width size that expose focal plane side-play amount in etching technics.The SEM testing fixture that described exposure is out of focus can be applicable to the photoetching production technology of less than 0.25 μm and 0.25 μm lines exposure by exposing patterns 1.Apparently, described first side can be left side.Described first side also can be right side.
Refer to Fig. 2, and combine and consult Fig. 1, what Figure 2 shows that the SEM testing fixture that exposure that the present invention enumerates is out of focus can the structural representation of exposing patterns.In the present invention, enumerate ground, the SEM testing fixture that described exposure is out of focus can exposing patterns 1 comprise spaced first can exposing patterns 10, second can exposing patterns 11, the 3rd can exposing patterns 12, and the 4th can exposing patterns 13.Described first can have the first straight line image 101 and is arranged on the first protuberance pattern 102 of described first straight line image 101 first side by exposing patterns 10.Described second can have the second straight line image 111 and is arranged on the second protuberance pattern 112 of described second straight line image 111 first side by exposing patterns 11.Described 3rd can have the 3rd straight line image 121 and is arranged on the 3rd protuberance pattern 122 of described 3rd straight line image 121 first side by exposing patterns 12.Described 4th can have Siping City's vertical element pattern 131 and is arranged on the 4th protuberance pattern 132 of vertical element pattern 131 first side, described Siping City by exposing patterns 13.The first predeterminable range d can be had between first protuberance pattern 102 of exposing patterns 11 adjacent space and described second straight line image 111 by exposing patterns 10 and described second described first
1, and described first predeterminable range d
1different sizes according to exposing focal plane side-play amount in etching technics are preset.Particularly, described first predeterminable range d
1the side-play amount of corresponding described exposure focal plane is 10nm.The second predeterminable range d can be had between second protuberance pattern 112 of exposing patterns 12 adjacent space and described 3rd straight line image 121 by exposing patterns 11 and the described 3rd described second
2, and described second predeterminable range d
2different sizes according to exposing focal plane side-play amount in etching technics are preset.Particularly, described second predeterminable range d
2the side-play amount of corresponding described exposure focal plane is 20nm.The 3rd predeterminable range d can be had between 3rd protuberance pattern 122 of exposing patterns 13 adjacent space and described Siping City vertical element pattern 131 by exposing patterns 12 and the described 4th the described 3rd
3, and described 3rd predeterminable range d
3different sizes according to exposing focal plane side-play amount in etching technics are preset.Particularly, described 3rd predeterminable range d
3the side-play amount of corresponding described exposure focal plane is 30nm.
Can being only and enumerating by exposing patterns 1 of the SEM testing fixture that described exposure is out of focus, should not be considered as the restriction to technical solution of the present invention.The technical scheme that those skilled in the art can disclose according to the present invention also defines varying number and spaced exposing patterns according to actual needs.
Refer to Fig. 3, and Fig. 2 is consulted in combination, the inspection method flow process that the present invention exposes SEM testing fixture out of focus is described in detail in detail.Figure 3 shows that the present invention exposes the inspection method process flow diagram of SEM testing fixture out of focus.In described etching technics exposure process, to can exposing by exposing patterns 1 of described exposure SEM testing fixture out of focus.The inspection method of the SEM testing fixture that described exposure is out of focus, comprising:
Perform step S1: to can exposing by exposing patterns 1 of described exposure SEM testing fixture out of focus;
Perform step S2: utilize described SEM device check described can exposing patterns 1 expose after figure, and then judge the size of described focal plane side-play amount;
Perform step S3: exposure sources adjusts.
Refer to Fig. 4, Fig. 5, Fig. 6, Figure 4 shows that the present invention exposes the structural representation that SEM testing fixture out of focus is checked through described focal plane skew 10nm.Figure 5 shows that the present invention exposes the structural representation that SEM testing fixture out of focus is checked through described focal plane skew 20nm.Figure 6 shows that the present invention exposes the structural representation that SEM testing fixture out of focus is checked through described focal plane skew 30nm.Particularly, in described step S2, when described can the first protuberance pattern 101 place of exposing patterns 1 deform adhesion time, then can judge that described focal plane there occurs 10nm skew.Similarly, when described can the first protuberance pattern 102, second protuberance pattern 112 place of exposing patterns deform adhesion time, then can judge that described focal plane there occurs 20nm skew.When described can the first protuberance pattern 102, second protuberance pattern 112 of exposing patterns, and the 3rd protuberance pattern 122 place deform adhesion time, then can judge that described focal plane there occurs 30nm skew.
In sum, exposure of the present invention SEM testing fixture out of focus, by arranging protuberance pattern on described straight bar paten, not only increases exposure sensitivity, and the skew characterizing focal plane is more directly perceived.The inspection method of the SEM testing fixture that described exposure is out of focus not only can be fixed a point, accurately, the distortion adhesion situation of exposing patterns the side-play amount of described focal plane can be judged efficiently by described, and to the bad timely process in exposure technology, can enhance productivity, improve product yield.
Those skilled in the art all should be appreciated that, without departing from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thus, if when any amendment or modification fall in the protection domain of appended claims and equivalent, think that these amendment and modification are contained in the present invention.
Claims (9)
1. the SEM testing fixture that an exposure is out of focus, it is characterized in that, described exposure SEM testing fixture out of focus comprise spaced at least the first can exposing patterns and second can exposing patterns, described first can have the first straight line image and be arranged on the first protuberance pattern of described first straight line image first side by exposing patterns, described second can have the second straight line image and is arranged on the second protuberance pattern of described second straight line image first side by exposing patterns, described first can exposing patterns and described second can exposing patterns adjacent space the first protuberance pattern and described second straight line image or between described second protuberance pattern and described first straight line image, there is predeterminable range, and described predeterminable range is preset according to the different size and live width size that expose focal plane side-play amount in etching technics, the SEM testing fixture that described exposure is out of focus can exposing patterns comprise spaced first further can exposing patterns, second can exposing patterns, 3rd can exposing patterns, and the 4th can exposing patterns, described first can have the first straight line image and is arranged on the first protuberance pattern of described first straight line image first side by exposing patterns, described second can have the second straight line image and is arranged on the second protuberance pattern of described second straight line image first side by exposing patterns, described 3rd can have the 3rd straight line image and is arranged on the 3rd protuberance pattern of described 3rd straight line image first side by exposing patterns, described 4th can have Siping City's vertical element pattern and is arranged on the 4th protuberance pattern of vertical element pattern first side, described Siping City by exposing patterns, the first predeterminable range d can be had between first protuberance pattern of exposing patterns adjacent space and described second straight line image by exposing patterns and described second described first
1, and described first predeterminable range d
1the side-play amount of corresponding described exposure focal plane is 10nm, the second predeterminable range d can be had between second protuberance pattern of exposing patterns adjacent space and described 3rd straight line image by exposing patterns and the described 3rd described second
2, and described second predeterminable range d
2the side-play amount of corresponding described exposure focal plane is 20nm, the 3rd predeterminable range d can be had between 3rd protuberance pattern of exposing patterns adjacent space and described Siping City vertical element pattern by exposing patterns and the described 4th the described 3rd
3, and described 3rd predeterminable range d
3the side-play amount of corresponding described exposure focal plane is 30nm.
2. the SEM testing fixture that exposure as claimed in claim 1 is out of focus, is characterized in that, the SEM testing fixture that described exposure is out of focus can be applicable to the photoetching production technology of less than 0.25 μm and 0.25 μm lines exposure by exposing patterns.
3. the SEM testing fixture that exposure as claimed in claim 1 is out of focus, it is characterized in that, described first side is left side.
4. the SEM testing fixture that exposure as claimed in claim 1 is out of focus, it is characterized in that, described first side is right side.
5. an inspection method for the SEM testing fixture that exposure as claimed in claim 1 is out of focus, it is characterized in that, described method comprises:
Perform step S1: to described exposure SEM testing fixture out of focus can exposing patterns exposure;
Perform step S2: utilize SEM device check described can figure after exposing patterns exposure, and then judge the size of described focal plane side-play amount;
Perform step S3: exposure sources adjusts.
6. the inspection method of the SEM testing fixture that exposure as claimed in claim 5 is out of focus, is characterized in that, the size of described focal plane side-play amount can be judged by described in the distortion adhesion after exposing patterns exposure.
7. one kind exposes the inspection method of SEM testing fixture out of focus as claimed in claim 6, it is characterized in that can having the first predeterminable range d between the first protuberance pattern of exposing patterns adjacent space and described second straight line image by exposing patterns and described second described first
1, and described first predeterminable range d
1the side-play amount of corresponding described exposure focal plane is 10nm, described can the first protuberance pattern place of exposing patterns deform adhesion time, can judge that described focal plane there occurs 10nm skew.
8. one kind exposes the inspection method of SEM testing fixture out of focus as claimed in claim 6, it is characterized in that can having the second predeterminable range d between the second protuberance pattern of exposing patterns adjacent space and described 3rd straight line image by exposing patterns and the described 3rd described second
2, and described second predeterminable range d
2the side-play amount of corresponding described exposure focal plane is 20nm, described can the first protuberance pattern of exposing patterns, the second protuberance pattern place deform adhesion time, can judge that described focal plane there occurs 20nm skew.
9. one kind exposes the inspection method of SEM testing fixture out of focus as claimed in claim 6, it is characterized in that can having the 3rd predeterminable range d between the 3rd protuberance pattern of exposing patterns adjacent space and described Siping City vertical element pattern by exposing patterns and the described 4th the described 3rd
3, and described 3rd predeterminable range d
3the side-play amount of corresponding described exposure focal plane is 30nm, described can the first protuberance pattern, the second protuberance pattern of exposing patterns, and the 3rd protuberance pattern place deform adhesion time, can judge that described focal plane there occurs 30nm skew.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210335510.5A CN102830594B (en) | 2012-09-11 | 2012-09-11 | Exposed out-of-focus SEM (Scanning Electron Microscope) detection device and detection method thereof |
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| CN201210335510.5A CN102830594B (en) | 2012-09-11 | 2012-09-11 | Exposed out-of-focus SEM (Scanning Electron Microscope) detection device and detection method thereof |
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| CN102830594B true CN102830594B (en) | 2015-02-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473798A (en) * | 2019-08-19 | 2019-11-19 | 上海华力微电子有限公司 | A kind of crystal column surface super-small defect inspection method |
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| US4433911A (en) * | 1981-06-30 | 1984-02-28 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of evaluating measure precision of patterns and photomask therefor |
| US5656403A (en) * | 1996-01-30 | 1997-08-12 | United Microelectronics Corporation | Method and template for focus control in lithography process |
| US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
| US6057908A (en) * | 1996-08-08 | 2000-05-02 | Nikon Corporation | Exposure condition measurement method |
| US7511817B2 (en) * | 2003-11-25 | 2009-03-31 | Fujitsu Limited | Reticle, reticle inspection method and reticle inspection apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7439001B2 (en) * | 2005-08-18 | 2008-10-21 | International Business Machines Corporation | Focus blur measurement and control method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4433911A (en) * | 1981-06-30 | 1984-02-28 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of evaluating measure precision of patterns and photomask therefor |
| US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
| US5656403A (en) * | 1996-01-30 | 1997-08-12 | United Microelectronics Corporation | Method and template for focus control in lithography process |
| US6057908A (en) * | 1996-08-08 | 2000-05-02 | Nikon Corporation | Exposure condition measurement method |
| US7511817B2 (en) * | 2003-11-25 | 2009-03-31 | Fujitsu Limited | Reticle, reticle inspection method and reticle inspection apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473798A (en) * | 2019-08-19 | 2019-11-19 | 上海华力微电子有限公司 | A kind of crystal column surface super-small defect inspection method |
| CN110473798B (en) * | 2019-08-19 | 2021-10-19 | 上海华力微电子有限公司 | Method for detecting ultra-small-size defects on wafer surface |
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| CN102830594A (en) | 2012-12-19 |
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