CN102780403A - Single-phase trailing edge chopper voltage regulator - Google Patents
Single-phase trailing edge chopper voltage regulator Download PDFInfo
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- CN102780403A CN102780403A CN2012103003820A CN201210300382A CN102780403A CN 102780403 A CN102780403 A CN 102780403A CN 2012103003820 A CN2012103003820 A CN 2012103003820A CN 201210300382 A CN201210300382 A CN 201210300382A CN 102780403 A CN102780403 A CN 102780403A
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Abstract
The invention discloses a single-phase trailing edge chopper voltage regulator comprising a synchronization detection circuit, an impulse wave generator circuit, an isolation drive circuit, a power-frequency chopper circuit and a voltage stabilizing feedback circuit which are connected with one another. Along with the increasingly quickened abandoning of resistive light sources such as the filament lamp and the like, the demands of users for regulating the voltages of loads such as an inductive impedance daylight lamp and capacitive impedance gas lamp are gradually increased; and the defect of harmonic interference of a thyristor voltage regulator is gradually revealed. However, the single-phase trailing edge chopper voltage regulator employs MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) or IGBT (Insulated Gate Bipolar Translator) as a core component; the waveform output on a load is trailing-edge-adjustable sine wave; and through cut-off control on the trailing edge of the sine wave, the waveform is changed along with signal control and the voltage rises slowly without impact on the load. The single-phase trailing edge chopper voltage regulator is simple in electrical structure, low in cost, and capable of achieving an excellent voltage regulation effect on the inductive loads and the capacitive loads and protecting the load against surge current caused by voltage jump of the thyristor voltage regulator, and has great market application potential.
Description
Technical field
The present invention relates to a kind of alternating current voltage regulator, especially a kind of sinusoidal wave passing zero trigger, sinusoidal wave back edge are turn-offed controllable single-phase trailing edge chopper control device.
Background technology
Device for high-power power electronic is used for the alternating current pressure regulation and belongs to the application with broad development potentiality.Present ac voltage regulator except that traditional automatic coupling voltage regulator, also has the oil immersed type voltage regulator, isolates voltage regulator, induction voltage regulator, five kinds of pillar electric voltage regulator and thyristor voltage regulators.Automatic coupling voltage regulator is used comparatively extensive.But automatic coupling voltage regulator is except the shortcoming of bulky, apparatus expensive, and moving contact can produce electric arc, particularly load when big in use, more is easy to generate electric arc, brings hidden danger to production operation.Simultaneously, autotransformer does not have buffer action because primary and secondary directly connects together, and low-pressure side also is with high-tension electricity, has an accident easily.Secondly, being is the power regulator device that core devices constitutes with the controllable silicon.Though the controllable silicon dimmer circuit is simple, with low cost, can produce stronger Harmonic Interference during owing to controllable silicon phase shift work, if do not take effective filtering measure, will hinder the use of many electrical equipment.In addition, controllable silicon dimmer has a very steep forward position when opening, and voltage waveform is from the unexpected high jump of no-voltage, and this influence to incandescent lamp & lantern resistive load is little, but is not suitable for the pressure regulation use of glow discharge spot lamp.Because most glow discharge spot lamps all need drive circuit to come cooperating; And drive circuit is a kind of capacitive load; The voltage that controllable silicon dimmer produces increases suddenly and can on capacitive load, produce very big surge current, makes circuit working unstable, even the fault that causes drive circuit to burn.
Present high-power electric semiconductor device; Especially metal oxide semiconductor field effect tube (MOSFET), insulated gate bipolar power tube (IGBT) have had significant progress in new forms of energy, industrial automation (high-frequency welding machine, high-frequency ultrasonic, inverter, UPS/EPS, induction heating) field; The application of these power semiconductor devices in the alternating current regulator; Under perfect industrial circuit design; Stable operation reliably and with long-term, even can surmount the silicon controlled range of application.Particularly in the high-frequency circuit application, reduce to and keep electric current because thyristor characteristics, has the anode current that makes thyristor only for recovering blocking-up, its internal positive feedback can't be kept, thyristor just can recover blocking-up, so thyristor can't be used.And MOSFET and IGBT influence on an insulating barrier through electric field of projection and flow through transistorized electric current, so its driving power is very little, switching speed is fast, and saturation pressure reduces.Along with the production technology of MOSFET and IGBT is constantly ripe, its application has much the gesture of catching up with and surpassing thyristor.But because the application technology of this type of power semiconductor device requires level higher; If the electrical principle that is designed is not mature enough; Will cause problems: for example have parasitic thyristor (the n+p-n-p+ semiconductor structure of the mos gate utmost point) among the IGBT; This just makes the maximum operating currenbt of device will receive the restriction of this parasitic thyristor latch up effect, though adopt the negative electrode short circuit technology can suitably weaken this harmful effect, produces heating problem in the time of will causing the traction inductive load.
Summary of the invention
The objective of the invention is problem, design a kind of single-phase trailing edge chopper control device based on MOSFET and IGBT power device to the serious Harmonic Interference that exists in the present thyristor voltage regulator circuit theory.
Technical scheme of the present invention is: a kind of single-phase trailing edge chopper control device, comprise sync detection circuit (1), and pulse wave generation circuit (2), isolated drive circuit (3), power frequency chopper circuit (4), voltage stabilizing feedback circuit (5) interconnects.After signal control circuit obtains the control signal of 0-10V, 0-5V, 4-20mA or potentiometer, amplify the analog signal of acquisition standard through transistor.Sync detection circuit (1) detect to be caught the zero crossing in the electric main sine wave through optocoupler, inserts the input of pulse wave generation circuit (2) jointly with the analog signal of aforesaid standards.Simultaneously, voltage stabilizing feedback circuit (5) is connected on the output loading two ends, when fluctuation takes place civil power, voltage regulation signal input pulse wave generation circuit (2) is arranged, and influences the cycle of oscillation of impulse wave.The output of pulse wave generation circuit (2) directly links to each other with isolated drive circuit (3).Isolated drive circuit (3) core devices is two NPN type triodes and two positive-negative-positive triodes.Isolated drive circuit (3) promotes MOSFET1 and MOSFET2 (hereinafter to be referred as MOS1, MOS2) alternation through damping resistance, output power frequency back edge chopping voltage.Power frequency chopper circuit (4) connects an end of mains supply and load respectively, and the drain electrode of MOS1, MOS2 meets civil power L and N, and the source electrode of MOS1, MOS2 meets inductive load or capacitive load RL.Output waveform is the adjustable sine wave of back edge in the load, and through the control that offset of sinusoidal ripple back edge is turn-offed, output waveform is the adjustable sine wave of back edge that average voltage is regulated with signal.
The adjustable sine wave of described back edge, Quan begin conducting continuously from sinusoidal wave zero crossing, output voltage increases with sinusoidal waveform synchronously.According to the signal controlling power field effect transistor sine wave was turn-offed in moment.
The adjustable sine wave of described back edge, the time t≤0.5ms from sinusoidal wave conducting to sinusoidal wave shutoff.The sinusoidal wave positive half cycle turn-off time is identical with the negative half period turn-off time.
Described pulse wave generation circuit (2) is made up of the MCU1 single-chip microcomputer.The built-in working power of MCU1 unit, clock source unit, reset signal unit, impulse wave generating unit, voltage stabilizing feedback unit, phase signal detecting unit.The input pin 1 of MCU1 receives sync detection circuit (1) signal with pin 16, and pin 7 receives voltage stabilizing feedback circuit (5) signal.Output provides PWM high-low level, pwm pulse ripple input isolated drive circuit (3) is driven with pin 14 through pin 11 and amplifies.
Described isolated drive circuit (3) is divided into and isolates positive drive circuit and isolate negative drive circuit, by NPN type triode Q1 and Q3; Positive-negative-positive triode Q2 and Q4, capacitor C 1, C2, base biasing resistor R5, R9; Damping resistance R7, R11, isolating transformer B1, B2 constitute.The pin 14 of MCU1 connects the base stage of Q1 and Q2, and the emitter of Q1, Q2 is connected on the primary side of isolating transformer B1 through R6 and C1.Pin 11 connects the base stage of Q3 and Q4, and the emitter of Q3, Q4 is connected on the primary side of isolating transformer B2 through R10 and C2.The effect of damping resistance is the effect that prevents MOS1, MOS2 grid, source terminal voltage oscillation.Because of requiring higher frequency, so leakage inductance is not done requirement, this damping resistance resistance is less here.
Described power frequency chopper circuit (4), by FET MOS1, MOS2, resistance R 13, R14, inductance L 1, L2, capacitor C 1, C2, and diode D1, D2 constitute.The control utmost point of MOS1, MOS2 is drawn from grid separately respectively, and the MOS1 grid links to each other with damping resistance R7, and the MOS2 grid links to each other with damping resistance R11.Between the source electrode of MOS1 and the drain electrode and meet diode D1, the also series arm of parallel resistance R1 and C1 simultaneously.Inductance L 1 is connected between the anode of source electrode and diode D1 of MOS1.Between the source electrode of MOS2 and the drain electrode and meet diode D2, the series arm of resistance R 2 and capacitor C 2 with it and connect, inductance L 2 is connected between the right anode of source electrode and the diode D2 of MOS2.The drain electrode of MOS1 and MOS2 is drawn and is met mains supply L and N, and the source electrode of MOS1 and MOS2 is drawn respectively and connect load, constitutes ac circuit thus.
Described voltage stabilizing feedback circuit (5), by isolating transformer B3, operational amplifier U2, resistance R 15, R16, R17, R18 constitute.The primary side cross-over connection load of isolating transformer B3, a secondary end ground connection, the other end is through the inverting input of input operational amplifier U2 after R17, the R16 dividing potential drop.The in-phase input end ground connection of operational amplifier U2, output links to each other with the pin 7 of MCU1 through R18.
The advantage that the present invention has is divided into following aspect.
1. increase gradually with standard sine wave during the waveform zero passage in the load, the load waveform is undistorted.Can regulate output voltage with input control signal, control sinusoidal wave stop conducting, regulate average voltage.
2. the load waveform rises steadily, is fit to the inductive load pressure regulation, also is fit to the capacitive load charging process.
3. the trailing edge chopper control has been avoided the sudden change that voltage rises in the technological output waveform of existing thyristor phase-shift voltage regulating, and the Harmonic Interference problem that causes, reduces the electric energy of loss.
4. avoided power component to be operated in the amplification region, its heating loss is small, only need use the simple radiating material, thereby has reduced the volume of present device.
5. the design of back edge chopper control not only can be applied in the single-phase civil power, also can realize the application based on three-phase electricity through the break-make control to three groups of MOSFET or IGBT.
6. circuit theory of the present invention is simple, and used components and parts are less, are easy to modularization, can be used as the core regulator and embeds among the large automatic industrial control equipment.
Description of drawings
Fig. 1 is a basic circuit structure schematic diagram of the present invention.
Fig. 2 is the adjustable sine waveform figure of back edge that carries in the load of the present invention.
Fig. 3 the present invention is based on the embodiment physical circuit figure that MOSFET uses.
Fig. 4 is the embodiment device outline drawing of the present invention after the modularization encapsulation.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described.Through the description below in conjunction with accompanying drawing, the aforesaid feature and advantage of the present invention will be given prominence to and manifested.
Fig. 1 has provided basic circuit structure schematic diagram of the present invention.After signal control circuit obtained the control signal of 0-10V, 0-5V, 4-20mA or potentiometer, the analog signal of amplifying the acquisition standard through transistor was in order to control sinusoidal wave back edge.Sync detection circuit (1) detect to be caught the zero crossing in the electric main sine wave through optocoupler, inserts the input of pulse wave generation circuit (2) jointly with the analog signal of aforesaid standards.Simultaneously, voltage stabilizing feedback circuit (5) is connected on the input of pulse wave generation circuit (2), when fluctuation takes place civil power, voltage regulation signal input pulse wave generation circuit (2) is arranged, and influences the generating period of impulse wave.The output of pulse wave generation circuit (2) directly links to each other with isolated drive circuit (3).Isolated drive circuit (3) core devices is two NPN type triodes and two positive-negative-positive triodes.Isolated drive circuit (3) promotes MOS1 and MOS2 alternation through damping resistance, output power frequency trailing edge chopping voltage.Power frequency chopper circuit (4) connects an end of mains supply and load respectively, and the drain electrode of MOS1 meets civil power L and N, and the drain electrode of MOS2 meets inductive load or capacitive load RL.
Output waveform is adjustable sinusoidal wave as shown in Figure 2 of back edge in the load.Through the control that offset of sinusoidal ripple back edge is turn-offed, output waveform is the adjustable sine wave of back edge that average voltage is regulated with signal.Waveform begins continuously full conducting from sinusoidal wave zero crossing in the load, and output voltage increases with sinusoidal waveform synchronously.According to signal controlling MOSFET sine wave was turn-offed in the extremely short time.Through the MOSFET of high-frequency response, can realize from sinusoidal wave conducting to the sinusoidal wave time t≤0.5ms that turn-offs.The sinusoidal wave positive half cycle turn-off time is identical with the negative half period turn-off time.
The circuit diagram that inserts among Fig. 3 is to the present invention is based on the embodiment physical circuit figure that MOSFET uses.Sync detection circuit (1) is by detecting the zero crossing of catching in the electric main sine wave through resistance R 3, R4, optocoupler PC1, PC2.When input sine wave is positive half cycle, the luminous work of optocoupler PC2, optocoupler PC1 quits work, and working power VCC is through R2 ground connection; When input sine wave is negative half period, the luminous work of optocoupler PC1, optocoupler PC2 quits work, and working power VCC is through R1 ground connection.No matter just sine wave half cycle or negative half period, and the mid point of its zero passage all will be synchronized testing circuit (1) and detect, and with sinusoidal wave synchronizing information input pulse wave generation circuit (2).Simultaneously, voltage stabilizing feedback circuit (5) is connected on the input of pulse wave generation circuit (2), when fluctuation takes place civil power, has voltage regulation signal to import pulse wave generation circuit (2).
As shown in Figure 3, pulse wave generation circuit (2) is made up of the MCU1 single-chip microcomputer.The built-in working power of MCU1 unit, clock source unit, reset signal unit, impulse wave generating unit, voltage stabilizing feedback unit, phase signal detecting unit.The input pin 1 of MCU1 receives sync detection circuit (1) signal with pin 16, and pin 7 receives voltage stabilizing feedback circuit (5) signal.Output provides PWM high-low level, pwm pulse ripple input isolated drive circuit (3) is driven with pin 14 through pin 11 and amplifies.
Among Fig. 3; Isolated drive circuit (3) is by NPN type triode Q1 and Q3, positive-negative-positive triode Q2 and Q4, isolating transformer B1, B2; Coupling capacitance C1, C2, voltage stabilizing didoe ZD1, ZD2, ZD3, ZD4, resistance R 5, R6, R7, R8, R9, R10, R11, R12 form.Wherein R7, R11 are damping resistance, and R5 and R9 are base biasing resistor.The pin 14 and the pin 11 of the input termination impulse wave generation circuit (2) of isolated drive circuit (3).Owing to be positive activation type isolated drive circuit (3) here, thus the effect of damping resistance R7, R11 be used for eliminating MOS1, MOS2 because of the oscillatory occurences of generation out of control phenomenon takes place at the turn off process output voltage.VCC is the working power of HF switch pipe Q1, Q2, Q3, Q4.Two outputs of pulse wave generation circuit (2) meet HF switch pipe Q1Q2 and Q3Q4 respectively, and R5 one end connects working power VCC, and the other end links to each other with the base stage common port of Q2 with HF switch pipe Q1.The emitter of HF switch pipe Q1 links to each other with the emitter of Q2, and its common port is connected with coupling capacitance C1 through R6.The collector electrode of HF switch pipe Q1 meets working power VCC, the grounded collector of Q2.The elementary end of isolating transformer B1 links to each other other end ground connection with coupling capacitance C1.Be connected to negative electrode relative voltage stabilizing didoe ZD1, ZD2 between the secondary two ends of isolating transformer B1, the end of damping resistance R7 links to each other with the anode of voltage stabilizing didoe ZD1, and the other end is connected with the grid of MOS1.R8 is connected across between the grid and source electrode of MOS1.R9 one end connects working power VCC, and the other end links to each other with the base stage common port of Q4 with HF switch pipe Q3.The emitter of HF switch pipe Q3 links to each other with the emitter of Q4, and its common port is connected with coupling capacitance C2 through R10.The collector electrode of HF switch pipe Q3 meets working power VCC, the grounded collector of Q4.The elementary end of isolating transformer B2 links to each other other end ground connection with coupling capacitance C2.Be connected to negative electrode relative voltage stabilizing didoe ZD3, ZD4 between the secondary two ends of isolating transformer B2, the end of damping resistance R11 links to each other with the anode of voltage stabilizing didoe ZD3, and the other end is connected with the grid of MOS2.R12 is connected across between the grid and source electrode of MOS1.When pin 14 was output as high level, pin 11 was output as low level, and it is elementary that the pwm signal that pulse wave generation circuit this moment (2) produces gets into isolating transformer B1 through isolation capacitance C1, secondaryly after voltage stabilizing didoe ZD1, ZD2 voltage stabilizing, made MOS1 work through R7.When pin 11 is output as high level; Pin 14 is output as low level; It is elementary that the pwm signal that pulse wave generation circuit this moment (2) produces gets into isolating transformer B2 through isolation capacitance C2, secondaryly after voltage stabilizing didoe ZD3, ZD4 voltage stabilizing, makes MOS2 work through R11.Here because of requiring higher frequency, thus the leakage inductance of isolating transformer B1, B2 is not done requirement, and damping resistance R7, R11 resistance are less.
Preferably, damping resistance R7, R11 resistance are less, and the scope of can selecting is 1K to 1.5K, and its effect is the effect that prevents MOS1, MOS2 grid and source terminal voltage oscillation.
As shown in the figure, power frequency chopper circuit (4) is by FET MOS1, MOS2, resistance R 13, R14, and inductance L 1, L2, capacitor C 1, C2, and diode D1, D2 constitute.The control utmost point of MOS1, MOS2 is drawn from grid separately respectively, and the MOS1 grid links to each other with damping resistance R7, and the MOS2 grid links to each other with damping resistance R11.Between the source electrode of MOS1 and the drain electrode and meet diode D1, the also series arm of parallel resistance R1 and C1 simultaneously.Inductance L 1 is connected between the anode of source electrode and diode D1 of MOS1.Between the source electrode of MOS2 and the drain electrode and meet diode D2, the series arm of resistance R 2 and capacitor C 2 with it and connect, inductance L 2 is connected between the right anode of source electrode and the diode D2 of MOS2.The drain electrode of MOS1 and MOS2 is drawn and is met mains supply L and N, and the source electrode of MOS1 and MOS2 is drawn respectively and connect load, constitutes ac circuit thus.When MOS1 pipe receives pwm signal and during conducting work, the MOS2 pipe is closed; Pulse wave generation circuit (2) is adjusted the shut-in time of MOS1 according to control signal, makes the t of MOS1 after zero passage partly turn-off (static breech lock disappearance) constantly, turn-offs fully in the moment of t+ t.
Voltage stabilizing feedback circuit (5) has comprised isolating transformer B3, operational amplifier U2, resistance R 15, R16, R17, R18 element.The elementary cross-over connection load of isolating transformer B3, a secondary end ground connection, the other end is through resistance R 16, R17 ground connection.The in-phase input end ground connection of operational amplifier U2, output links to each other with the pin 7 of MCU1 through R18.Sampled signal through the undistorted sampling of isolating transformer B3 after behind the R16, R17 dividing potential drop through the inverting input of R15 input operational amplifier U2, product feedback signal input MCU1 handled after sampled signal was crossed zero balancing.
The preferred embodiments of the present invention are described only from illustrational purpose at this.Each characteristic described here need not to be used simultaneously, and any one or a plurality of can being bonded among the single embodiment in these characteristics.Therefore, those of ordinary skills will recognize also can and change with various modifications from this description and realize other embodiment.
Claims (5)
1. a single-phase trailing edge chopper control device comprises sync detection circuit (1), pulse wave generation circuit (2), and isolated drive circuit (3), power frequency chopper circuit (4), voltage stabilizing feedback circuit (5) interconnects; It is characterized in that: waveform is the adjustable sine wave of back edge in the load that described voltage regulator drives, and through the control that offset of sinusoidal ripple back edge is turn-offed, average voltage is regulated with signal in the whole sine wave period.
2. single-phase trailing edge chopper control device according to claim 1; It is characterized in that: described power frequency chopper circuit (4) comprises that power semiconductor device is power transistor (GTR), power field effect transistor (MOSFET), igbt (IGBT).
3. single-phase trailing edge chopper control device according to claim 1 is characterized in that: the adjustable sine wave of described back edge, Quan begin conducting continuously from sinusoidal wave zero crossing, output voltage increases with sinusoidal waveform synchronously.
4. single-phase trailing edge chopper control device according to claim 1; It is characterized in that: the adjustable sine wave of described back edge; With the instantaneous shutoff of sine wave, begin to turn-off time t≤0.5ms according to signal controlling power transistor (GTR), power field effect transistor (MOSFET), igbt (IGBT) to sine wave turn-offs fully from sine wave.
5. single-phase trailing edge chopper control device according to claim 1 is characterized in that: the adjustable sine wave of described back edge, the sinusoidal wave positive half cycle turn-off time is identical with the negative half period turn-off time.
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| CN2012103003820A CN102780403A (en) | 2012-08-22 | 2012-08-22 | Single-phase trailing edge chopper voltage regulator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012103003820A CN102780403A (en) | 2012-08-22 | 2012-08-22 | Single-phase trailing edge chopper voltage regulator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111896796A (en) * | 2020-08-03 | 2020-11-06 | 珠海格力电器股份有限公司 | Current oscillation detection device and method of PFC circuit and power supply system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5239255A (en) * | 1991-02-20 | 1993-08-24 | Bayview Technology Group | Phase-controlled power modulation system |
| CN102324856A (en) * | 2011-09-22 | 2012-01-18 | 电子科技大学 | A kind of assembly wave power adjusting device based on MOSFET |
| CN102324854A (en) * | 2011-09-22 | 2012-01-18 | 河海大学常州校区 | Voltage regulation circuit |
| CN202840970U (en) * | 2012-08-22 | 2013-03-27 | 杭州龙科电子有限公司 | Single-phase rear-edge chopped-wave voltage regulator |
-
2012
- 2012-08-22 CN CN2012103003820A patent/CN102780403A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5239255A (en) * | 1991-02-20 | 1993-08-24 | Bayview Technology Group | Phase-controlled power modulation system |
| CN102324856A (en) * | 2011-09-22 | 2012-01-18 | 电子科技大学 | A kind of assembly wave power adjusting device based on MOSFET |
| CN102324854A (en) * | 2011-09-22 | 2012-01-18 | 河海大学常州校区 | Voltage regulation circuit |
| CN202840970U (en) * | 2012-08-22 | 2013-03-27 | 杭州龙科电子有限公司 | Single-phase rear-edge chopped-wave voltage regulator |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111896796A (en) * | 2020-08-03 | 2020-11-06 | 珠海格力电器股份有限公司 | Current oscillation detection device and method of PFC circuit and power supply system |
| CN111896796B (en) * | 2020-08-03 | 2021-07-20 | 珠海格力电器股份有限公司 | Current oscillation detection device and method of PFC circuit and power supply system |
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Application publication date: 20121114 |