CN102545806A - Differential amplifier - Google Patents
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- CN102545806A CN102545806A CN2011102952212A CN201110295221A CN102545806A CN 102545806 A CN102545806 A CN 102545806A CN 2011102952212 A CN2011102952212 A CN 2011102952212A CN 201110295221 A CN201110295221 A CN 201110295221A CN 102545806 A CN102545806 A CN 102545806A
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- 230000003321 amplification Effects 0.000 claims abstract description 17
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 10
- 238000013461 design Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000008901 benefit Effects 0.000 description 3
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- 230000007812 deficiency Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
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- 238000000053 physical method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
- H03F3/45932—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by using feedback means
- H03F3/45937—Measuring at the loading circuit of the differential amplifier
- H03F3/45946—Controlling the loading circuit of the differential amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45082—Indexing scheme relating to differential amplifiers the common mode signal being taken or deducted from the one or more outputs of the differential amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors
Abstract
The invention discloses an omnidirectional differential amplifier adopting a transistor, which has the function of variable gain and can amplify signals by multiple times or even thousands of times by simply adjusting the resistance ratio. A regional feedback circuit composed of an NMOS and a current source is added in the design to increase the transconductance value G of a PMOS or NMOS transistor in input controlmThereby greatly reducing the uncertainty of amplification factor caused by the drift characteristic of semiconductor manufacturing elements. In addition, the miniaturization of the circuit and the good amplification linearity thereof enable the application level of the technology to cover the fields of power supply, communication and micro-electro-mechanical system.
Description
Technical field
The present invention is a differential amplifier, especially a kind of omnidirectional differential amplifier.
Background technology
When using operational amplifier usually, can its output be connected with its inverting input (inverting input node), form negative feedback (negative feedback) configuration.Reason is that the voltage gain of operational amplifier is very big, and scope does not wait to tens thousand of times from hundreds of, uses negative feedback could guarantee the stable running of circuit.
Differential amplifier also is differential amplifier, is a kind of electron-amplifier that the difference of two input terminal voltages is amplified with fixed gain, abbreviates " difference is put " sometimes as.Differential amplifier is used as the input stage of power amplifier and emitter-coupled logic (ECL) (ECL, Emitter Coupled Logic) usually.Differential amplifier has following three characteristics: (1) high input impedance, low output impedance.(2) difference of output signal magnitude and two input signals is proportional.(3) the general amplifier of frequency response is broad.Transistor differential amplifier 20, as shown in Figure 2, be to use the straightforward procedure of transistor without operational amplifier, its characteristic is not for to be subject to the influence of transistor gate and voltage between source electrodes, and to have enlargement ratio be Gain ≈ R
22/ (R
21+ 1/G
m), G wherein
mBe the transconductance value (transconductance) of input PMOS, because transconductance value G
mBe not definite value and change with the difference of making.If we need this enlargement ratio can be along with transconductance value G
mChange with uncertain and change, then should select resistance R
21＞＞1/G
m, if G
mValue can't significantly improve resistance R then
21Certainly will select bigger value, this restrictive condition further influences its demand that is applicable to different circuit design.
Learn by Fig. 2, when we with resistance value R
21With resistance value R
22Increase identical K doubly, these then whole enlargement ratios receive transconductance value G
mInfluence smaller.Yet, in order to keep V
OpWith V
OnIn identical operations point and operation dynamic range, through resistance 4*R
32Electric current must be reduced to 1/K doubly, so (1-1/K) electric current of I reduces effect and must be added to V
OpWith V
On, be illustrated in figure 3 as transistor differential amplifier and add current source 30, wherein K=4 on this example.
Applicant of the present invention tests and research through concentrated in view of deficiency of the prior art, and in line with the spirit of working with perseverance; Visualize the technology of differential amplifier of the present invention eventually; Can effectively under low cost is considered, overcome the deficiency of prior art, below be brief description of the present invention.
Summary of the invention
The present invention discloses the transistorized omnidirectional of a kind of employing differential amplifier, and it has the function of variable gain, can be through merely adjusting resistance ratio, and amplifying signal several times even thousands of times.Add in the design by nmos pass transistor and the regional feedback circuit that current source (current source) constitutes, increase input control in the transconductance value G of PMOS or nmos pass transistor
m, significantly to reduce the uncertainty of the enlargement ratio that drift characteristic that semiconductor makes element causes this amplifier circuit.
According to above-mentioned conception, the present invention proposes a kind of differential amplifier, comprising: amplification module, have resistance ratio, and receive input voltage, and said input voltage is enlarged into output voltage according to said resistance ratio; And feedback module, the said output voltage of the accurate adjustment in negative voltage position that is coupled in said amplification module and is produced according to said input voltage and feedback signal.
PMOS is big because of logic swing, and the charging and discharging process is long, in addition device mutual conductance G
mLittle, so operating rate is lower, after nmos circuit occurred, majority was replaced by nmos circuit.Be because of the PMOS circuit technology is simple, low price, scale still adopts the PMOS circuit engineering with the small-scale digital control circuit in some.
The present invention proposes a kind of control method of differential amplifier; Wherein said amplifier has resistance ratio; And comprise PMOS with transconductance value and the NMOS that is coupled in said PMOS, comprising: make said PMOS reception input voltage and said input voltage is enlarged into output voltage according to said resistance ratio; And make said NMOS that the negative sense position standard of said output voltage is offered said PMOS, and change said transconductance value according to this.
The present invention proposes a kind of differential amplifier, comprising: amplification module receives input voltage, and produces output voltage; And feedback module, receive the feedback signal of said output voltage, to adjust said output voltage to predetermined value.
The present invention proposes a kind of differential amplifier control method, comprising: according to input signal, produce the output signal; According to said output signal, produce feedback signal; And, adjust the said predetermined value that outputs signal to according to said feedback signal.
The present invention is for a kind of the design adds the regional feedback circuit that is made up of nmos pass transistor and current source, increase import control in the transconductance value G of PMOS or nmos pass transistor
m, the uncertainty of the enlargement ratio that this amplifier circuit is caused with the drift characteristic that significantly reduces semiconductor element.This enlargement ratio is resistance ratio R
42/ (R
41/ 2), it is noted that wherein this resistance ratio denominator size is first resistance R
41Half the, and scope between odd number doubly to thousands of times.
The present invention is a kind of omnidirectional differential amplifier, under the progress of signal processing circuit now condition at a tremendous pace, has variable gain and is applicable to that the amplifier that high speed signal is handled can produce revolutionary evolution.Integrated circuit replaces the framework of traditional active member and passive device gradually; Powerful Mechatronic Systems also depends on the control mode of man-machine interface; The signal that how to carry out stability amplifies; Promote the industry utilance simultaneously,, have very important influence power how to marching toward the dynamo-electric infrastructure device exploitation that developed country should possess.
For letting the foregoing of the present invention can be more obviously understandable, hereinafter is special lifts preferred embodiment, and conjunction with figs., elaborates.
Description of drawings
Fig. 1 is the sketch map of known full differential operational amplifier;
Fig. 2 is the sketch map of known transistor differential amplifier;
Fig. 3 is that known transistor differential amplifier adds electric current reduction effect to V
OpWith V
OnSketch map;
Fig. 4 is the sketch map of the complete differential variable gain amplifier of high speed of the present invention.
The main element symbol description
10: full differential operational amplifier 11: operational amplifier
12: common mode feedback circuit (CMFB) 20: transistor differential amplifier
23: the two NMOS of 22: the one PMOS
30: differential amplifier adds 32: the two PMOS of current source
NMOS 40 in 33: the one: the complete differential variable gain amplifier of high speed
R
41: first resistance R
42: second resistance
R
42 ': the 3rd resistance I
41: first current source
I
42: the second current source I
41 ': the 3rd current source
I
42 ': the 4th current source V
Ip: first input signal
V
In: the second input signal V
Op: the first output signal
V
On: the second output signal
Embodiment
The present invention can fully be understood by following embodiment explanation, make that knowing those skilled in the art person can this accomplish the present invention according to this, yet enforcement of the present invention be not can be limited it by the following example to implement kenel; Just, the restriction of the embodiment that scope of the present invention does not receive to have proposed, and should be as the criterion with claims that the present invention proposes.
A complete differential amplifier is usually used in converting single-ended signal into differential wave, and this Amplifier Design has three places that must consider especially: the single-ended impedance that the impedance in (1) single-ended signal source must be mated (match) differential amplifier; (2) input of amplifier must remain in the common-mode voltage limits; (3) must applied signal voltage be converted to the central signal of output common mode voltage that is positioned at expectation.
Differential amplifier circuit is difference channel again, can not only effectively amplify direct current signal, and can effectively reduce because the null offset (zero drift) that power-supply fluctuation and transistor cause with variations in temperature, thereby obtains application widely.Particularly number of applications is in integrated transporting discharging (consistency of component parameters and symmetry are good) circuit; It often is used as the prestage of casacade multi-amplifier; Wherein, Integrated circuit is to be manufactured on each element of entire circuit and connection each other simultaneously on one block semiconductor, forms an inseparable integral body, and characteristics are that volume is little, in light weight, low in energy consumption, reliability is high and price is low.Differential amplifier circuit is also claimed differential amplifier circuit; It is a kind of basic amplifier circuit that suppresses ability very by force that null offset is had; Wherein " null offset " phenomenon is for when dc amplification circuit input not during plus signal; The slow variation of the working points at different levels current potential that causes owing to variation or other interference of temperature, supply voltage all can be passed through amplifications at different levels and make the final stage output voltage depart from null value and move up and down.The typical differential amplifier, it is a kind of special direct coupling (direct coupled) amplifying circuit, and it requires the element on circuit both sides symmetrical fully, and promptly two pipe models are identical, characteristic is identical, each corresponding resistance value equates with each corresponding current source.
According to above-mentioned conception, the present invention proposes a kind of like the complete differential variable gain amplifier 40 of high speed that Fig. 4 disclosed, and mainly comprises amplification module and feedback module, comprising the second current source I
42Be coupled to this amplification module with the 2nd NMOS 23, as shown in Figure 4 to form regional feedback loop, and the negative voltage position that is produced according to this input voltage and feedback signal is accurate to adjust this output voltage.This differential amplifier comprises: a PMOS 22, comprise first grid, first source electrode and first drain electrode, and wherein this first source electrode is connected in first resistance R
41First end, this first grid is used to receive the first input signal V
Ip, and this first drain electrode is connected in the second grid and the second current source I of the 2nd NMOS 23
42And a NMOS 33, comprise this second grid, second source electrode and second drain electrode, wherein this second drain electrode is connected in the 3rd source electrode of the 2nd PMOS 32 and second end of this first resistance R 41, and this second source electrode is used to export first and exports signal V
OpAnd be connected in the 3rd resistance R
42
Above-mentioned differential amplifier also comprises: the 2nd PMOS 32, comprise the 3rd grid, the 3rd source electrode and the 3rd drain electrode, and wherein the 3rd source electrode is connected in this first resistance R
41This second end, the 3rd grid is used to receive the second input signal V
In, the 3rd drain electrode is connected in this second grid and the 4th current source I that is same as this second current source of a NMOS 33
42And the 2nd NMOS 23, comprise the 4th grid, the 4th source electrode and the 4th drain electrode, wherein the 4th drain electrode is connected in this first source electrode and this first resistance R of a PMOS 22
41This first end, the 4th source electrode is used to export the second output signal V
OnAnd be connected in second resistance R
42
This feedback loop can produce the equivalent transconductance value G that increases in PMOS 22,23 transistors
mEffect, thereby reduce this transconductance value G
mTo the influence of this enlargement ratio, make this enlargement ratio almost level off to resistance ratio R
42/ (R
41/ 2), it is noted that wherein this resistance ratio denominator size is this first resistance R
41Half the.In addition, it can replace an above-mentioned PMOS 22 respectively with the 3rd NMOS and the 4th NMOS at input has identical enlarging function with the 2nd PMOS 32.
In the directly-coupled transistor circuit, the drifting problem that differential amplifier commonly used comes the Control work point to produce because of temperature effect.In addition aspect electron medicine, the physical measurement aspect, all constantly by means of differential amplifier.
Though the present invention has disclosed preferred embodiment as above, so it is not in order to limit the present invention.Have common knowledge the knowledgeable in the technical field under the present invention, do not breaking away from the spirit and scope of the present invention, when doing various changes and retouching.Therefore, protection scope of the present invention is when being as the criterion with defining of claims.
Embodiment:
1, a kind of differential amplifier comprises:
Amplification module has resistance ratio, receives input voltage, and according to this resistance ratio this input voltage is enlarged into output voltage; And
Feedback module, be coupled in this amplification module and the negative voltage position that produced according to this input voltage and feedback signal accurate to adjust this output voltage.
2, like the described differential amplifier of the 1st embodiment, it comprises:
The one PMOS; Comprise first grid, first source electrode and first drain electrode; Wherein this first source electrode is connected in first end of first resistance, and this first grid is used to receive first input signal, and this first drain electrode is connected in the second grid and second current source of the 2nd NMOS; And
The one NMOS comprises this second grid, second source electrode and second drain electrode, and wherein this second drain electrode is connected in the 3rd source electrode of the 2nd PMOS and second end of this first resistance, and this second source electrode is used to export the first output signal and is connected in the 3rd resistance.
3, like the described differential amplifier of the 2nd embodiment, also comprise:
The 2nd PMOS; Comprise the 3rd grid, the 3rd source electrode and the 3rd drain electrode; Wherein the 3rd source electrode is connected in this second end of this first resistance; The 3rd grid is used to receive second input signal, and the 3rd drain electrode is connected in this second grid and the 4th current source that is same as this second current source of a NMOS; And
The 2nd NMOS comprises the 4th grid, the 4th source electrode and the 4th drain electrode, and wherein the 4th drain electrode is connected in this first source electrode of a PMOS and this first end of this first resistance, and the 4th source electrode is used to export the second output signal and is connected in second resistance.
4, like the described differential amplifier of the 2nd or 3 embodiment, wherein this second current source and the 2nd NMOS constitute this feedback module, and same structure betides the 4th current source and a NMOS.
5, like the described differential amplifier of the 2nd or 3 embodiment; Wherein this second current source and the 4th current source; Can keep this second output signal and this first output signal in identical operations point and identical operations dynamic range, wherein this operation dynamic range is that circuit can be accepted input signal to produce the working range of output signal.
6, like the described differential amplifier of the 5th embodiment, wherein the half the ratio of this second resistance or the 3rd resistance and this first resistance is defined as enlargement ratio.
7, like the described differential amplifier of the 6th embodiment, wherein this enlargement ratio can be made linear change at this operating point and this dynamic range.
8, like the described differential amplifier of the 2nd or 3 embodiment, it can replace an above-mentioned PMOS and the 2nd PMOS respectively with the 3rd NMOS and the 4th NMOS at input and identical enlarging function is arranged.
9, a kind of control method of differential amplifier, wherein this amplifier has resistance ratio, and comprises PMOS with transconductance value and the NMOS that is coupled in this PMOS, comprising:
Make this PMOS reception input voltage and this input voltage is enlarged into output voltage according to this resistance ratio; And
Make this NMOS that the negative sense position standard of this output voltage is offered this PMOS, and change this transconductance value according to this.
10, like the described method of the 9th embodiment; Wherein second current source and the 4th current source; Can keep the second output signal and the first output signal in identical operations point and identical operations dynamic range, wherein this operation dynamic range is that circuit can be accepted input signal to produce the working range of output signal.
11, like the described method of the 10th embodiment, wherein the half the ratio of second resistance or the 3rd resistance and first resistance is defined as enlargement ratio.
12, like the described method of the 11st embodiment, wherein this enlargement ratio can be made linear change at this operating point and this dynamic range.
13, like the described method of the 9th embodiment, it can replace a PMOS and the 2nd PMOS respectively with the 3rd NMOS and the 4th NMOS at input and identical enlarging function is arranged.
14, a kind of differential amplifier comprises:
Amplification module receives input voltage, and produces output voltage; And
Feedback module receives the feedback signal of this output voltage, to adjust this output voltage to predetermined value.
15, like the described differential amplifier of the 14th embodiment; Wherein second current source and the 4th current source; Can keep the second output signal and the first output signal in identical operations point and identical operations dynamic range, wherein this operation dynamic range is that circuit can be accepted input signal to produce the working range of output signal.
16, like the described differential amplifier of the 15th embodiment, wherein the half the ratio of second resistance or the 3rd resistance and first resistance is defined as enlargement ratio.
17, like the described differential amplifier of the 16th embodiment, wherein this enlargement ratio can be made linear change at this operating point and this dynamic range.
18, like the described differential amplifier of the 14th embodiment, it can replace a PMOS and the 2nd PMOS respectively with the 3rd NMOS and the 4th NMOS at input and identical enlarging function is arranged.
19, a kind of differential amplifier control method comprises:
According to input signal, produce the output signal;
According to this output signal, produce feedback signal; And
According to this feedback signal, adjust this and output signal to predetermined value.
20, like the described method of the 19th embodiment; Wherein second current source and the 4th current source; Can keep the second output signal and the first output signal in identical operations point and identical operations dynamic range, wherein this operation dynamic range is that circuit can be accepted input signal to produce the working range of output signal.
21, like the described method of the 20th embodiment, wherein the half the ratio of second resistance or the 3rd resistance and first resistance is defined as enlargement ratio.
22, like the described method of the 21st embodiment, wherein this enlargement ratio can be made linear change at this operating point and this dynamic range.
23, like the described method of the 19th embodiment, it can replace a PMOS and the 2nd PMOS respectively with the 3rd NMOS and the 4th NMOS at input and identical enlarging function is arranged.
The above person; Be merely preferred embodiment of the present invention; When not limiting the present invention with this; Protection scope of the present invention is when decide with the scope of claims and impartial field thereof, and promptly every equalization of doing according to the scope of claims of the present invention changes and modification, all should belong in the scope that patent of the present invention contains.
Claims (10)
1. differential amplifier comprises:
Amplification module has resistance ratio, receives input voltage, and according to said resistance ratio said input voltage is enlarged into output voltage; And
Feedback module, be coupled in said amplification module and the negative voltage position that produced according to said input voltage and feedback signal accurate to adjust said output voltage.
2. differential amplifier as claimed in claim 1 also comprises:
The one PMOS; Comprise first grid, first source electrode and first drain electrode; Wherein said first source electrode is connected in first end of first resistance, and said first grid is used to receive first input signal, and said first drain electrode is connected in the second grid and second current source of the 2nd NMOS; And
The one NMOS; Comprise said second grid, second source electrode and second drain electrode; Wherein said second drain electrode is connected in the 3rd source electrode of the 2nd PMOS and second end of said first resistance, and said second source electrode is used to export the first output signal and is connected in the 3rd resistance
Wherein said amplification module also comprises a said PMOS, said first resistance, said the 3rd resistance and a said NMOS, and said feedback module comprises said the 2nd NMOS and second resistance.
3. differential amplifier as claimed in claim 2 also comprises:
Said the 2nd PMOS; Comprise the 3rd grid, said the 3rd source electrode and the 3rd drain electrode; Wherein said the 3rd source electrode is connected in said second end of said first resistance; Said the 3rd grid is used to receive second input signal, and said the 3rd drain electrode is connected in the said second grid and the 4th current source that is same as said second current source of a said NMOS; And
The 2nd NMOS; Comprise the 4th grid, the 4th source electrode and the 4th drain electrode; Wherein said the 4th drain electrode is connected in said first source electrode of a said PMOS and said first end of said first resistance, and said the 4th source electrode is used to export the second output signal and is connected in said second resistance
Wherein said amplification module also comprises said the 2nd PMOS, said first resistance, said second resistance and said the 2nd NMOS, and said feedback module comprises a said NMOS and said the 3rd resistance.
4. like claim 2 or 3 described differential amplifiers, wherein said second current source and said the 2nd NMOS constitute said feedback module, and same structure betides said the 4th current source and a said NMOS.
5. like claim 2 or 3 described differential amplifiers; Wherein said second current source and said the 4th current source; Keep said second output signal and the said first output signal in identical operations point and identical operations dynamic range, wherein said operation dynamic range is that circuit can be accepted input signal to produce the working range of output signal.
6. differential amplifier as claimed in claim 5, the half the ratio of wherein said second resistance or said the 3rd resistance and said first resistance is defined as enlargement ratio, and said enlargement ratio is made linear change at said operating point and said dynamic range.
7. like claim 2 or 3 described differential amplifiers, it replaces a said PMOS and said the 2nd PMOS at input respectively with the 3rd NMOS and the 4th NMOS and identical enlarging function is arranged.
8. the control method of a differential amplifier, wherein said amplifier has resistance ratio, and comprises PMOS with transconductance value and the NMOS that is coupled in said PMOS, comprising:
Make said PMOS reception input voltage and said input voltage is enlarged into output voltage according to said resistance ratio; And
Make said NMOS that the negative sense position standard of said output voltage is offered said PMOS, and change said transconductance value according to this.
9. differential amplifier comprises:
Amplification module receives input voltage, and produces output voltage; And
Feedback module receives the feedback signal of said output voltage, to adjust said output voltage to predetermined value.
10. differential amplifier control method comprises:
According to input signal, produce the output signal;
According to said output signal, produce feedback signal; And
According to said feedback signal, adjust the said predetermined value that outputs signal to.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099145951A TWI477067B (en) | 2010-12-24 | 2010-12-24 | Differential amplifier and controlling method for the same |
| TW099145951 | 2010-12-24 |
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| Publication Number | Publication Date |
|---|---|
| CN102545806A true CN102545806A (en) | 2012-07-04 |
| CN102545806B CN102545806B (en) | 2015-09-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110295221.2A Active CN102545806B (en) | 2010-12-24 | 2011-09-27 | Differential amplifier |
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| Country | Link |
|---|---|
| US (1) | US8604877B2 (en) |
| CN (1) | CN102545806B (en) |
| TW (1) | TWI477067B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103825566A (en) * | 2012-11-16 | 2014-05-28 | 凌朝东 | Method for optimizing high linearity of trans-conductance amplifier |
| CN110118887A (en) * | 2018-02-06 | 2019-08-13 | 株式会社东芝 | Current detection circuit |
| WO2021056301A1 (en) * | 2019-09-26 | 2021-04-01 | 深圳市汇顶科技股份有限公司 | Transconductance amplifier and chip |
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| JP6682470B2 (en) * | 2017-03-23 | 2020-04-15 | 株式会社東芝 | amplifier |
| WO2019126947A1 (en) * | 2017-12-25 | 2019-07-04 | Texas Instruments Incorporated | Voltage monitoring circuit that manages voltage drift caused from negative bias temperature instability |
| US11695377B2 (en) * | 2021-10-14 | 2023-07-04 | Nxp B.V. | Amplifier with low component count and accurate gain |
| CN117395113B (en) * | 2023-12-13 | 2024-03-19 | 浙江地芯引力科技有限公司 | Signal demodulation circuit, chip and electronic equipment |
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| WO2002103898A1 (en) * | 2001-06-14 | 2002-12-27 | Nurlogic Design, Inc. | Method and apparatus for voltage clamping in feedback amplifiers using resistors |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103825566A (en) * | 2012-11-16 | 2014-05-28 | 凌朝东 | Method for optimizing high linearity of trans-conductance amplifier |
| CN103825566B (en) * | 2012-11-16 | 2018-03-20 | 凌朝东 | The high linearity optimization method of trsanscondutance amplifier |
| CN110118887A (en) * | 2018-02-06 | 2019-08-13 | 株式会社东芝 | Current detection circuit |
| CN110118887B (en) * | 2018-02-06 | 2021-10-01 | 株式会社东芝 | Current detection circuit |
| WO2021056301A1 (en) * | 2019-09-26 | 2021-04-01 | 深圳市汇顶科技股份有限公司 | Transconductance amplifier and chip |
| US11456709B2 (en) | 2019-09-26 | 2022-09-27 | Shenzhen GOODIX Technology Co., Ltd. | Transconductance amplifier and chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102545806B (en) | 2015-09-23 |
| US8604877B2 (en) | 2013-12-10 |
| US20120161869A1 (en) | 2012-06-28 |
| TWI477067B (en) | 2015-03-11 |
| TW201228220A (en) | 2012-07-01 |
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