CN102360168B - Integrated measured pattern and measurement method for lithography process - Google Patents
Integrated measured pattern and measurement method for lithography process Download PDFInfo
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- CN102360168B CN102360168B CN201110310582.XA CN201110310582A CN102360168B CN 102360168 B CN102360168 B CN 102360168B CN 201110310582 A CN201110310582 A CN 201110310582A CN 102360168 B CN102360168 B CN 102360168B
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Abstract
The invention provides an integrated lithography process measurement pattern and a measurement method. The pattern comprises multiple or all of a vertical isolation line measurement part for measuring vertical isolation lines, a horizontal isolation line measurement part for measuring horizontal isolation lines, a vertical isolation trench measurement part for measuring vertical isolation trenches, a horizontal isolation trench measurement part for measuring horizontal isolation trenches, a vertical dense line measurement part for measuring vertical dense lines, a horizontal dense line measurement part for measuring horizontal dense lines, a vertical dense trench measurement part for measuring vertical dense trenches and a horizontal dense trench measurement part for measuring horizontal dense trenches.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to the integrated measurement figure of a kind of photoetching process and photoetching process method for measurement.
Background technology
All requirement survey line thickness, isolation width, logical journey spacing (through pitch) etc. of each layer process in semiconductor manufacture.During semi-conductor chip is manufactured, after lithographic definition one deck circuit, whether need to measuring some dimension of picture, to carry out monitoring photoetching technology up to standard.
Specifically, line thickness and the addition of isolation width are spacing (pitch).If line thickness is constant, isolation width becomes different size, and this gap depth is called logical journey spacing.
But, in the prior art, only define the measurement figure of intensive lines and isolation lines.Fig. 1 shows the measurement figure of isolation lines of the prior art.Fig. 2 shows the measurement figure of intensive lines of the prior art.
Therefore, in the time of measurement level and/or vertical isolation lines, isolated groove, intensive lines, intensive groove, need to look for figure to measure in the position disperseing, thereby for the measurement of various structures has brought great inconvenience, delay thus the measurement time and reduced measurement efficiency.
Summary of the invention
Technical matters to be solved by this invention is for there being above-mentioned defect in prior art, provides a kind of and can reduce the measurement time and improve the integrated measurement figure of photoetching process and the photoetching process method for measurement that measure efficiency.
According to a first aspect of the invention, provide a kind of photoetching process integrated measurement figure, it comprises: measure part for the vertical isolation lines that measure vertical isolation lines, level isolation lines for measurement level isolation lines measure part, measure part for the vertical isolation groove that measures vertical isolation groove, measure part for the horizontal isolated groove that measures horizontal isolated groove, measure part for the vertical intensive lines that measure vertical intensive lines, the intensive lines of level for the intensive lines of measurement level measure part, measure part for the vertical intensive groove that measures vertical intensive groove, the intensive groove of level for the intensive groove of measurement level measures the multiple or whole of part.
Preferably, the integrated measurement figure entirety of described photoetching process is used.
Preferably, the integrated measurement figure of described photoetching process has HLMC shape.
Preferably, the integrated measurement figure of above-mentioned photoetching process also comprises the multiple parts that measure for continuously, by measuring the different spacing of described multiple parts, just can obtain thus optics correction data, and these optics correction data are used as one group of data.
Preferably, the integrated measurement figure of described photoetching process comprises that the vertical isolation lines for measuring vertical isolation lines measure part, level isolation lines for measurement level isolation lines measure part, measure part for the vertical isolation groove that measures vertical isolation groove, measure part for the horizontal isolated groove that measures horizontal isolated groove, measure part for the vertical intensive lines that measure vertical intensive lines, the intensive lines of level for the intensive lines of measurement level measure part, measure part for the vertical intensive groove that measures vertical intensive groove, measure all parts of part for the intensive groove of level of the intensive groove of measurement level.
The integrated measurement figure of photoetching process of first aspect present invention has related to the figure of integrated multiple measurement purposes, be used for measuring various circuitous patterns, as isolated lines, isolated groove, intensive lines, intensive groove, and for the logical journey spacing of the figure of optics correction.And, adopt the design of various figures integrated, can better monitor in photoetching process to intensive lines groove and isolation lines, the assessment of groove and optics correction effect quality.And the integrated measurement graphics package of first aspect present invention has contained multiple measurement figure, can in this comprehensive shape, measure every kind of figure as required, and look for figure to measure in the position disperseing unlike prior art; Reduce thus the measurement time and improve and measure efficiency.
According to a second aspect of the invention, provide a kind of photoetching process method for measurement, it adopts according to the integrated measurement figure of the photoetching process described in first aspect present invention and measures one or more in line thickness, isolation width, logical journey spacing.
Owing to having adopted according to the integrated measurement figure of the photoetching process described in first aspect present invention, therefore, it will be appreciated by persons skilled in the art that according to the photoetching process method for measurement of second aspect present invention and can realize equally the achieved useful technique effect of the integrated measurement figure of photoetching process according to a first aspect of the invention.
Brief description of the drawings
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows the measurement figure of isolation lines of the prior art.
Fig. 2 schematically shows the measurement figure of intensive lines of the prior art.
Fig. 3 schematically shows the measurement figure according to the embodiment of the present invention.
It should be noted that, accompanying drawing is used for illustrating the present invention, and unrestricted the present invention.Note, the accompanying drawing that represents structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 3 schematically shows the measurement figure according to the embodiment of the present invention.Integrated measurement figure shown in Fig. 3 uses as an ameristic entirety.
Specifically, the integrated measurement figure shown in Fig. 3 comprises: can measure vertical isolation lines Part I 1, can measure the intensive lines of vertical-horizontal and/or the intensive groove of level Part II 2, can measure vertical isolation groove Part III 3, can measure vertical intensive lines and/or vertical intensive groove Part IV 4, can measurement level the Part V 5 of isolation lines and Part VI 6 that can the horizontal isolated groove of measurement.
It should be noted that, the integrated measurement figure shown in Fig. 3 is only a preferred graphical examples of the present invention, and this integrated measurement figure has reflected the microelectronic logo---HLMC of company of magnificent power; , the integrated measurement figure shown in Fig. 3 has HLMC shape.
In fact, can suitably arrange, to make integrated measurement figure can measure multiple or whole in vertical isolation lines, level isolation lines, vertical isolation groove, horizontal isolated groove, vertical intensive lines, the intensive lines of level, vertical intensive groove, the intensive groove of level.
Therefore, correspondingly, can comprise multiple parts according to the integrated measurement figure of the embodiment of the present invention, for example measure part for the vertical isolation lines that measure vertical isolation lines, level isolation lines for measurement level isolation lines measure part, measure part for the vertical isolation groove that measures vertical isolation groove, measure part for the horizontal isolated groove that measures horizontal isolated groove, measure part for the vertical intensive lines that measure vertical intensive lines, the intensive lines of level for the intensive lines of measurement level measure part, measure part for the vertical intensive groove that measures vertical intensive groove, the intensive groove of level for the intensive groove of measurement level measures the multiple or whole of part.In a preferred embodiment, the integrated measurement figure of described photoetching process comprises above-mentioned whole part, thereby comprises all possibilities.
And, the figure that utilizes the embodiment of the present invention to design, the figure that can measure optics correction leads to journey spacing.Specifically, the integrated measurement figure of above-mentioned photoetching process also comprises multiple parts (the example multiple parts 7 as shown in Figure 3 for measuring continuously, 8,9,10), by measuring the different spacing of described multiple parts, just can obtain thus optics correction data, these optics correction data are used as one group of data.
Integrated measurement graphics package shown in Fig. 3 has contained various measurement figures, can in this comprehensive shape, measure every kind of figure as required, and looks for figure to measure in the position disperseing unlike prior art; Reduce thus the measurement time and improve and measure efficiency.And the integrated measurement figure of above-mentioned photoetching process has related to the figure of integrated multiple measurement purposes, is used for measuring various circuitous patterns, as isolation lines, isolated groove, intensive lines, intensive groove, and for the logical journey spacing of the figure of optics correction.And, adopt the design of various figures integrated, can better monitor in photoetching process to intensive lines groove and isolation lines, the assessment of groove and optics correction effect quality.
Be understandable that, although the present invention discloses as above with preferred embodiment, but above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (3)
1. the integrated measurement figure of photoetching process, it is characterized in that comprising: measure part for the vertical isolation lines that measure vertical isolation lines, level isolation lines for measurement level isolation lines measure part, measure part for the vertical isolation groove that measures vertical isolation groove, measure part for the horizontal isolated groove that measures horizontal isolated groove, measure part for the vertical intensive lines that measure vertical intensive lines, the intensive lines of level for the intensive lines of measurement level measure part, measure part and measure part for the intensive groove of level of the intensive groove of measurement level for measuring the vertical intensive groove of vertical intensive groove, the integrated measurement figure of described photoetching process is used for measuring vertical isolation lines, level isolation lines, vertical isolation groove, horizontal isolated groove, vertical intensive lines, the intensive lines of level, multiple or whole in vertical intensive groove and the intensive groove of level, the integrated measurement figure of described photoetching process also comprises the multiple parts that measure for continuously, by measuring the different spacing of described multiple parts, just can obtain thus optics correction data, and these optics correction data are used as one group of data.
2. the integrated measurement figure of photoetching process according to claim 1, is characterized in that, the integrated measurement figure entirety of described photoetching process is used.
3. the integrated measurement figure of photoetching process according to claim 1 and 2, is characterized in that, the integrated measurement figure of described photoetching process has HLMC shape.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110310582.XA CN102360168B (en) | 2011-10-13 | 2011-10-13 | Integrated measured pattern and measurement method for lithography process |
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| CN201110310582.XA CN102360168B (en) | 2011-10-13 | 2011-10-13 | Integrated measured pattern and measurement method for lithography process |
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| CN102360168A CN102360168A (en) | 2012-02-22 |
| CN102360168B true CN102360168B (en) | 2014-08-27 |
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| CN110690196A (en) * | 2019-09-29 | 2020-01-14 | 中国电子科技集团公司第十一研究所 | Detector chip, dense line preparation method thereof and stress monitoring method thereof |
Citations (4)
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| US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
| US5776640A (en) * | 1996-06-24 | 1998-07-07 | Hyundai Electronics Industries Co., Ltd. | Photo mask for a process margin test and a method for performing a process margin test using the same |
| US7258953B2 (en) * | 2005-01-28 | 2007-08-21 | Lsi Corporation | Multi-layer registration and dimensional test mark for scatterometrical measurement |
| CN101206406A (en) * | 2006-12-18 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Photolithography detection pattern and photolithography edition territory |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6433878B1 (en) * | 2001-01-29 | 2002-08-13 | Timbre Technology, Inc. | Method and apparatus for the determination of mask rules using scatterometry |
| US7063923B2 (en) * | 2002-07-11 | 2006-06-20 | United Electronics Corp. | Optical proximity correction method |
| US7056625B2 (en) * | 2003-06-02 | 2006-06-06 | Intel Corporation | Focus detection structure |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
| US5776640A (en) * | 1996-06-24 | 1998-07-07 | Hyundai Electronics Industries Co., Ltd. | Photo mask for a process margin test and a method for performing a process margin test using the same |
| US7258953B2 (en) * | 2005-01-28 | 2007-08-21 | Lsi Corporation | Multi-layer registration and dimensional test mark for scatterometrical measurement |
| CN101206406A (en) * | 2006-12-18 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Photolithography detection pattern and photolithography edition territory |
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