CN102117816B - Amorphous HgCdTe monolithic integrated type focal plane detector - Google Patents
Amorphous HgCdTe monolithic integrated type focal plane detector Download PDFInfo
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- CN102117816B CN102117816B CN 200910163261 CN200910163261A CN102117816B CN 102117816 B CN102117816 B CN 102117816B CN 200910163261 CN200910163261 CN 200910163261 CN 200910163261 A CN200910163261 A CN 200910163261A CN 102117816 B CN102117816 B CN 102117816B
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Abstract
The invention relates to an amorphous HgCdTe monolithic integrated type focal plane detector, which is characterized by comprising a readout circuit, an aluminum electrode, a lower electrode, photosensitive layers and an upper electrode, wherein the aluminum electrode is designed on the readout circuit; a groove is designed on the aluminum electrode; the metal lower electrode is deposited in the groove; the lower electrode is connected with the readout circuit through the aluminum electrode; the photosensitive layers are designed on the surfaces of the readout circuit, the aluminum electrode and the lower electrode; and the metal lower electrode is deposited on the photosensitive layers. The detector can be used for infrared wavebands and visible waveband. Experimental tests prove that the amorphous HgCdTe monolithic integrated type focal plane detector can simplify the manufacturing process of the focal plane, eliminate the material difference between a detector chip and the readout circuit and avoid generating stress or strain between the detector chip and the readout circuit so that the reliability of the monolithic integrated type focal plane detector is greatly improved and the detector has higher external quantum efficiency.
Description
Technical field
The present invention relates to a kind of amorphous mercury cadmium telluride monolithic integrated focal plane detector, relate in particular to the amorphous mercury cadmium telluride monolithic integrated focal plane detector structure.
Background technology
Existing hybrid-type mercury-cadmium-tellurium focal plane detector adopts indium pole interconnection technology or spun gold interconnection technique that detector chip is connected with reading circuit, but, because the reading circuit of the focus planardetector of hybrid-type interconnection structure adopts different materials with detector chip, the material parameter such as lattice constant, thermal coefficient of expansion is different, the variation of temperature causes existing between reading circuit and the detector chip certain stress or strain during focus planardetector work, following problem easily occurs: detector chip material surface and indium post ginseng are inferior uneven, cause rosin joint; Can't guarantee that in inverse bonding indium pole interconnection each pixel can both aim at; Adhering to of phosphide material and reading circuit is bad, occurs coming off, thereby reduces the reliability of focus planardetector.
Summary of the invention
Defective for existing hybrid-type focus planardetector syndeton existence, the invention provides a kind of amorphous mercury cadmium telluride monolithic integrated focal plane detector, by brand-new structural design, reach the materials variances simplifying the focus planardetector manufacturing process, eliminate detector chip and reading circuit, avoid producing between detector chip and the reading circuit stress or strain, significantly improve the focus planardetector reliability, improve the purpose of focus planardetector external quantum efficiency.
Amorphous mercury cadmium telluride monolithic integrated focal plane detector of the present invention is characterized in that: by reading circuit, and the aluminium electrode, bottom electrode, photosensitive layer and top electrode form.Be designed with the aluminium electrode at reading circuit, be designed with groove on the aluminium electrode, plated metal bottom electrode in groove, bottom electrode is connected with reading circuit by the aluminium electrode, surface in reading circuit, aluminium electrode and three parts of bottom electrode is designed with photosensitive layer, plated metal top electrode on photosensitive layer.
Amorphous mercury cadmium telluride monolithic integrated focal plane detector of the present invention can be used for infrared band, also can be used for visible light wave range.
The present invention tests proof by experiment: can simplify the focus planardetector manufacturing process, eliminate the materials variances of detector chip and reading circuit, avoid producing between detector chip and the reading circuit stress or strain, the reliability of monolithic integrated focal plane detector is significantly improved, and make detector have higher external quantum efficiency.
Description of drawings
Fig. 1 is the indium pole interconnection structural representation of hybrid-type focus planardetector;
Fig. 2 is the cutaway view of 32 yuan of amorphous mercury cadmium telluride monolithic integrated focal plane detectors;
Fig. 3 is 32 yuan of amorphous mercury cadmium telluride monolithic integrated focal plane detector vertical views;
Among the figure, 1 is reading circuit, and 2 is the aluminium electrode, and 3 is bottom electrode, and 4 is photosensitive layer, and 5 is top electrode, and 6 is readout circuit chip, and 7 is passivation layer, and 8 is contact metal, and 9 is the indium post, and 10 is detector.
Embodiment
Below in conjunction with accompanying drawing, by embodiment the present invention is described in further details, but protection scope of the present invention is not limited to the following examples.
The present embodiment is the situation that the present invention is applied to 32 yuan of amorphous mercury cadmium telluride monolithic integrated focal plane detectors.As shown in Figures 2 and 3, be designed with 32 bar shaped aluminium electrodes 2 at reading circuit 1, be designed with a strip groove, plated metal bottom electrode 3 in groove on each aluminium electrode 2, have 32 independently bottom electrodes 3, bottom electrode 3 is connected with reading circuit 1 by aluminium electrode 2.Each bottom electrode 3 is designed with corresponding photosensitive layer 4, and the surface conjunction of photosensitive layer 4 and reading circuit 1, aluminium electrode 2 and bottom electrode 3 these three parts is designed with top electrode 5 at photosensitive layer 4.The number of bottom electrode 3 and photosensitive layer 4 is determined by the detection unit number of detector.Photosensitive layer 4 usefulness amorphous mercury cadmium tellurides are as material.
Claims (4)
1. amorphous mercury cadmium telluride monolithic integrated focal plane detector, it is characterized in that: by reading circuit (1), aluminium electrode (2), bottom electrode (3), photosensitive layer (4) and top electrode (5) form, be designed with aluminium electrode (2) at reading circuit (1), the aluminium electrode is designed with groove on (2), plated metal bottom electrode (3) in groove, bottom electrode (3) is connected with reading circuit (1) by aluminium electrode (2), in reading circuit (1), be designed with photosensitive layer (4) on the surface of aluminium electrode (2) and (3) three parts of bottom electrode, at the upper plated metal top electrode (5) of photosensitive layer (4).
2. amorphous mercury cadmium telluride monolithic integrated focal plane detector according to claim 1 is characterized in that: can be used for infrared band.
3. amorphous mercury cadmium telluride monolithic integrated focal plane detector according to claim 1 is characterized in that: can be used for visible light wave range.
4. amorphous mercury cadmium telluride monolithic integrated focal plane detector according to claim 1 is characterized in that: photosensitive layer (4) with the amorphous mercury cadmium telluride as material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910163261 CN102117816B (en) | 2009-12-30 | 2009-12-30 | Amorphous HgCdTe monolithic integrated type focal plane detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910163261 CN102117816B (en) | 2009-12-30 | 2009-12-30 | Amorphous HgCdTe monolithic integrated type focal plane detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102117816A CN102117816A (en) | 2011-07-06 |
| CN102117816B true CN102117816B (en) | 2013-03-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200910163261 Active CN102117816B (en) | 2009-12-30 | 2009-12-30 | Amorphous HgCdTe monolithic integrated type focal plane detector |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5861626A (en) * | 1996-04-04 | 1999-01-19 | Raytheon Ti System, Inc. | Mercury cadmium telluride infrared filters and detectors and methods of fabrication |
| US6054718A (en) * | 1998-03-31 | 2000-04-25 | Lockheed Martin Corporation | Quantum well infrared photocathode having negative electron affinity surface |
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2009
- 2009-12-30 CN CN 200910163261 patent/CN102117816B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5861626A (en) * | 1996-04-04 | 1999-01-19 | Raytheon Ti System, Inc. | Mercury cadmium telluride infrared filters and detectors and methods of fabrication |
| US6054718A (en) * | 1998-03-31 | 2000-04-25 | Lockheed Martin Corporation | Quantum well infrared photocathode having negative electron affinity surface |
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| CN102117816A (en) | 2011-07-06 |
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