CN101946315B - 用于半导体晶片处理的高效静电吸盘 - Google Patents

用于半导体晶片处理的高效静电吸盘 Download PDF

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CN101946315B
CN101946315B CN2009801048768A CN200980104876A CN101946315B CN 101946315 B CN101946315 B CN 101946315B CN 2009801048768 A CN2009801048768 A CN 2009801048768A CN 200980104876 A CN200980104876 A CN 200980104876A CN 101946315 B CN101946315 B CN 101946315B
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阿施施·布特那格尔
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Abstract

本发明大体上提供一种高效静电吸盘，用以在处理体积中保持衬底。高效静电吸盘包含电极，该电极埋置在高纯度热塑性部件中。明确而言，高纯度热塑性部件可以包括金属离子含量极低的高纯度聚芳醚酮。相较于在静电吸盘中使用聚醯亚胺膜而言，高纯度聚芳醚酮具有优越的耐磨损性、耐高温、耐等离子体、抗腐蚀性化学品、电稳定性及强度。本发明亦提供一种制造高效静电吸盘的简化方法。

Description

用于半导体晶片处理的高效静电吸盘
技术领域
本发明实施例大体上关于用以在处理环境中保持衬底的静电吸盘。
背景技术
在衬底处理应用中，吸盘是用来保持衬底，以避免衬底在处理过程中移动或错位。静电吸盘利用静电吸引力来保持衬底使其就定位。由于静电吸盘比机械性真空吸盘更具优势，例如减少衬底中因应力引起的裂缝、减少处理腔室中的污染以及能够在低真空环境中保持衬底，因此静电吸盘广受欢迎。
典型的静电吸盘含有埋置在电绝缘体中的导电电极。使用电压源相对于电极来电性偏压衬底。绝缘体可避免电子流穿过该绝缘体，造成在衬底和电极中累积相反的电荷。因此产生静电力，而将衬底吸引且保持在吸盘上。
一般静电吸盘是使用聚醯亚胺(polyimide)形成多层绝缘层将铜电极夹在中间所制成的多层式结构。聚醯亚胺是一种热固性材料(thermosetting material)，具有例如高温稳定性(相对于其它有机聚合物而言)、良好介电性、良好机械性等期望的性质。然而，在某些衬底制造处理中，使用聚醯亚胺来绝缘电极限制了吸盘的使用寿命。聚醯亚胺和类似聚合物对于某些处理气体和等离子体的抗腐蚀性低。用于各种衬底处理操作中的含氧气体和等离子体对静电吸盘上的聚醯亚胺层特别有害。在这些处理中，处理气体会腐蚀绝缘体且暴露出电极，造成吸盘在处理过程中故障，损失掉成本昂贵的整个衬底。
此外，当衬底碎裂或破损而形成具有锐利边缘的碎片时，衬底碎片能轻易地刺穿聚醯亚胺膜，而暴露出吸盘的电极。衬底碎片也可能从衬底背侧移动到聚醯亚胺膜。即使是在绝缘体中单个针孔处暴露出电极，也可能造成电极和等离子体之间的电弧放电作用(arcing)，并且需要更换整个吸盘。
再者，制造上述静电吸盘的处理需要使用对压力和热敏感的粘着剂以及复杂又费力的电路建构作业。例如，可提供具有导电性铜层的聚醯亚胺膜。该铜层可能经过蚀刻、绕线配置或研磨以形成电极。蚀刻之后，使用压力或热敏感性粘着剂将第二聚醯亚胺膜粘在电极层上。接着利用压力或热敏感性粘着剂将该多层堆栈粘至吸盘的基底。这种处理不仅仅复杂且需要很多步骤和长的制造时间，而且某些处理腔室中的处理条件也可能会对该些粘着层造成不利的影响。这将会导致这些层分层，需要更换掉整个吸盘。
因此，需要一种改进的静电吸盘以及制造静电吸盘的简化方法。
发明内容
在本发明的一个实施例中，多层式静电吸盘包含高纯度聚芳醚酮部件以及预先形成的电极，其中该高纯度聚芳醚酮部件含有低的金属离子浓度，该高纯度聚芳醚酮部件作为静电吸盘中的介电质，并且该预先形成的电极埋置在该高纯度聚芳醚酮部件中。
在本发明的另一实施例中，静电吸盘组件包含衬底支撑平台、第一聚芳醚酮层、第二聚芳醚酮层以及电极部件，其中该第一聚芳醚酮层的第一表面热塑性地接合至衬底支撑平台，且该第二聚芳醚酮层的第二表面构造成支撑衬底，并且该电极部件埋置在第一聚芳醚酮层的第二表面和第二聚芳醚酮层的第一表面之间，其中第一和第二聚芳醚酮层热塑性地接合在一起。
在本发明的又一实施例中，制造静电吸盘组件的方法包括将预先形成的电极放置在第一高纯度聚芳醚酮层和第二高纯度聚芳醚酮层之间，将该第一和第二高纯度聚芳醚酮层热塑性地接合在一起，并且将第一高纯度聚芳醚酮层热塑性地接合至衬底支撑平台。
附图说明
为了详细了解本发明上述特征，将参照多个实施例更具体地描述本发明，部分实施例绘于附图中。但需注意的是，附图所绘的仅是本发明的代表性实施例，因此不应视为本发明范围的限制，本发明可能具有其它等效实施例。
图1是根据本发明的静电吸盘实施例的剖面图。
图2是可使用本发明静电吸盘的示例性处理腔室的剖面图。
图3是可使用该示例性处理腔室的示例性群集工具的俯视平面图。
具体实施方式
本发明大体上提供一种用以在处理体积中保持衬底的高效静电吸盘。该高效静电吸盘包含电极，该电极埋置在两层高纯度热塑性膜之间。明确而言，该高纯度热塑性膜可能是一种金属离子含量极低的高纯度聚芳醚酮(polyaryletherketone)。相较于现今用于静电吸盘中的聚醯亚胺膜而言，高纯度聚芳醚酮具有优越的耐磨损性、耐高温、耐等离子体、抗腐蚀性化学品、电稳定性及强度。本发明亦提供一种制造高效静电吸盘的简化方法。
图1是根据本发明的静电吸盘组件100的实施例的剖面示意图。静电吸盘组件100包含静电吸盘112，静电吸盘112位在衬底支撑平台110上。静电吸盘112包含介电部件120，介电部件120接合至衬底支撑平台110。电极122埋置在介电部件120内。电极122可预先形成各种几何形状并且可能是单极或双极。在一个实施例中，介电部件120可能包含第一介电层124，该第一介电层124接合至衬底支撑平台110，并且在该第一介电曾124上具有预先形成的电极122。第二介电层114可配置在电极122和第一介电层124上，且与之接合。
衬底支撑平台110可包含开口111，导电延伸物116延伸通过开口111而设置在电接触表面118上，通过电接触表面118将功率连接至电极122。将范围介于约200伏特(V)至约2000伏特的高电压施加至电极122，以使该些绝缘介电膜产生极化作用(polarization)，而在第二介电层114的表面上产生静电，使得利用静电的库伦力将衬底吸住且固定在支撑平台110上。
为了提供良好的热量传递给保持到第二介电层114的表面上的衬底，可通过导管128将传热气体输送至介电层114的表面。导管128可通往介电层114表面中的气体引导通道(未显示于图中)。该些通道可为各种几何形状。在处理衬底的过程中，可经由导管128将传热气体送往气体引导通道。
静电吸盘112的第一介电层124和第二介电层114可由高纯度热塑性膜形成，例如由金属离子含量极低的高纯度聚芳醚酮所形成。本文中，高纯度定义为下列各种金属含量不超过百万分之一：铝、锑、砷、钡、铍、铋、硼、镉、钙、铬、钴、铜、镓、锗、铪、铟、铁、铅、锂、汞、镁、锰、钼、镍、铌、磷、钾、铷、钪、硒、硅、银、钠、锶、硫、钽、鍗、铊、锡、钛、钨、钒、钇、锌以及锆。
相较于传统热塑性聚醯亚胺膜而言，高纯度聚芳醚酮具有优越的强度以及抗戳刺性。如上所述，衬底可粒可能会从晶片的背侧或晶片破损处移动到静电吸盘112的表面。第一介电层124被刺穿可能造成电极122与腔室中的等离子体之间发生电弧。因此，介电层中使用高纯度聚芳醚酮可保护吸盘避免受到衬底颗粒戳刺而大幅延长静电吸盘112的寿命。
此外，高纯度聚芳醚酮具有优越的耐高温性，使得静电吸盘112可使用在温度超过200℃的处理环境中。高纯度聚芳醚酮对于广范围的化学环境(包括，碱性化合物、芳香性碳氢化合物、醇类以及氢化碳氢化合物)还表现出优越的化学抗性(chemical resistance，或称化学耐受性)。
高纯度聚芳醚酮也具有优越的等离子体耐受性(plasma resistance)。例如，使用含有100％氧气的预清洁蚀刻等离子体在10.3平方厘米的板上进行等离子体蚀刻100小时所造成的质量损失可能少于0.14克/平方厘米。此种特性使静电吸盘112的表面能够进行预处理和清洁以获得最佳化的吸盘参数，而不像在清洁由聚醯亚胺膜制造的静电吸盘需要打开腔室让腔室暴露在污染物中。
高纯度聚芳醚酮也能耐受多种高腐蚀性气体。例如，静电吸盘112可用在含有例如氯气(Cl2)、三氯化硼(BCl3)、四氟甲烷(CF4，也称四氟化碳或四氟代甲烷)和三氟甲烷(CHF3，也称三氟代甲烷)等腐蚀性气体的处理环境中，而无需额外的保护性罩盖。
适合用于本发明中的高纯度聚芳醚酮是由英国兰开郡(Lancashire)的威格斯公司(Victrex PLC.)制造的商品名为VICTREX Ultra-High PurityPEEK(UHP PEEK)的聚芳醚酮。
相较于传统的聚醯亚胺膜，图1的静电吸盘112的优势是使用高纯度聚芳醚酮，使得其制造方法简单且容易。使用高纯度聚芳醚酮来形成第一介电层124和第二介电层114的好处是因为材料的热塑性质。如上所述，要使用聚醯亚胺来创造出静电吸盘的多层堆栈需要在第一介电层上建构出铜电路，并且利用压力敏感或热敏感性粘着剂将第二介电层粘在该堆栈上。对照之下，根据本发明的制造方法实施例则无需建构步骤或粘着步骤。
根据本发明的方法，电极122(例如，铜电极)可预先形成，并且埋置在第一介电层124和第二介电层114之间。随后，可对此组件施压且热塑性地接合以形成静电吸盘112。接着，将静电吸盘112压向衬底支撑平台110并且热塑性地将之接合至衬底支撑平台110。因此，不再如同使用聚醯亚胺层需要建构电极电路以及通过压力敏感性或热敏感性粘着剂来粘着膜层。因此，相较于传统使用聚醯亚胺膜制造的吸盘组件而言，简化了制造本发明静电吸盘组件实施例110的制造处理，且提供更可靠的部件和改善产量。
图2是内部可使用静电吸盘组件100的示例处理腔室200的剖面图。图中所绘的示例处理腔室可用于等离子体蚀刻处理。然而，本发明的静电吸盘组件100也可应用在执行他种处理的其它腔室中，例如化学气相沉积、物理气相沉积以及离子轰击。
处理腔室200通常包含侧壁235、顶壁245以及底部250，并且静电吸盘组件100设置在底部250上。如上所述，静电吸盘组件100支撑且保持衬底225。具有多个喷嘴285的气体供应器280从处理气体源283引导气体进入处理腔室200。可利用一个或多个气体阀284来控制流经喷嘴285的气流。借着将诸如射频(RF)、微波能量等电磁能量耦合至气体，以激发气体形成等离子体。如图2所示，在处理腔室200中，从天线功率供应器290施加RF电压至位于腔室200的顶壁245邻近处的感应天线295，以感应方式来激发气体。可选地，可从电极电压供应器210施加RF电压至静电吸盘组件100的电极122，并且将顶壁245电接地，而以电容方式来激发气体。可利用传热气体源230供应传热气体来控制衬底225的温度。通过排气系统220从腔室200中排出耗尽的气体和副产物，排气系统220可能包含真空泵212和节流阀215。
图3是示例群集工具300的俯视平面图，在群集工具300可使用示例处理腔室200。处理腔室200可连接至群集工具300，群集工具300中包含且提供用于处理腔室200的电子、管线配置以及其它支持功能。群集工具300可具有在无需破除真空且不让衬底暴露在群集工具300外部湿气或其它污染物中的情况下，在该些腔室200～204之间传送衬底225的能力。群集工具300包含传送室205，传送室205耦接至负载锁定室(load lockchamber)206和处理腔室200～204。负载锁定室206能在系统外的周围环境以及传送室205和处理腔室200～204内的真空环境之间传送衬底225。负载锁定室206可能包含一个或多个可抽真空区域，用以保持一或多个衬底225。当将衬底225输入群集工具300时，将该些可抽真空区域抽空，并且当从群集工具300中移出衬底225时，则破除该些可抽真空区域的真空状态。传送室205内部可设置有传送机械手207，用以在负载锁定室206和处理腔室200～204之间传送衬底225。虽然图3中显示五个处理腔室，但群集工具300可具有任意适当数目的处理腔室。
虽然上述内容揭示了本发明的多个实施例，但在不偏离本发明基本范围的情况下可设计本发明的其它及进一步实施例。本发明范围由权利要求所界定。

Claims (15)

1.一种多层式静电吸盘，包括：
具有低金属离子浓度的高纯度聚芳醚酮部件，其中，所述高纯度聚芳醚酮部件含有下列任一物质的含量不超过百万分之一，所述物质包括铝、锑、砷、钡、铍、铋、硼、镉、钙、铬、钴、铜、镓、锗、铪、铟、铁、铅、锂、汞、镁、锰、钼、镍、铌、磷、钾、铷、钪、硒、硅、银、钠、锶、硫、钽、鍗、铊、锡、钛、钨、钒、钇、锌以及锆，并且其中，所述高纯度聚芳醚酮部件作为所述静电吸盘中的介电质；以及
电极，其预先形成并埋置在所述高纯度聚芳醚酮部件中。
2.根据权利要求1所述的多层式静电吸盘，其中，所述高纯度聚芳醚酮部件包含第一层以及第二层，所述第一层和所述第二层热塑性地彼此接合。
3.根据权利要求2所述的多层式静电吸盘，其中，所述第一层热塑性地结合至衬底平台。
4.根据权利要求3所述的多层式静电吸盘，其中，所述高纯度聚芳醚酮部件能耐受等离子体蚀刻环境，所述等离子体蚀刻环境包含利用功率源激发的氧气。
5.根据权利要求3所述的多层式静电吸盘，其中，所述高纯度聚芳醚酮部件在含有100％氧气的等离子体蚀刻环境下暴露100小时之后具有10.3平方厘米的表面积以及具有低于0.14克/平方厘米的质量损失。
6.根据权利要求3所述的多层式静电吸盘，其中，所述高纯度聚芳醚酮部件能耐受碱性化合物、芳香性碳氢化合物、醇以及氢化碳氢化合物。
7.根据权利要求3所述的多层式静电吸盘，其中，所述高纯度聚芳醚酮部件适于在温度高于200℃的处理环境下连续操作。
8.根据权利要求7所述的多层式静电吸盘，其中，所述高纯度聚芳醚酮部件的表面经过等离子体处理，以改变表面参数。
9.一种静电吸盘组件，包括：
衬底支撑平台；
第一聚芳醚酮层，其具有第一表面，所述第一表面热塑性地接合至所述衬底支撑平台；
第二聚芳醚酮层，其具有第二表面，所述第二表面构造成支撑衬底；
以及
电极部件，其预先形成并埋置在所述第一聚芳醚酮层的第二表面和所述第二聚芳醚酮层的第一表面之间；
其中，所述第一聚芳醚酮层和所述第二聚芳醚酮层热塑性地接合在一起，并且其中，所述第一和第二聚芳醚酮层含有下列各物质的含量低于百万分之一，所述物质包括铝、锑、砷、钡、铍、铋、硼、镉、钙、铬、钴、铜、镓、锗、铪、铟、铁、铅、锂、汞、镁、锰、钼、镍、铌、磷、钾、铷、钪、硒、硅、银、钠、锶、硫、钽、鍗、铊、锡、钛、钨、钒、钇、锌以及锆。
10.根据权利要求9所述的静电吸盘组件，其中，聚芳醚酮层在等离子体环境中经过表面处理，所述等离子体环境包含利用功率源激发的氧气。
11.根据权利要求10所述的静电吸盘组件，其中，所述静电吸盘组件适于在200℃或更高温的热环境中连续使用。
12.根据权利要求11所述的静电吸盘组件，其中，所述聚芳醚酮层能耐受碱性化合物、芳香性碳氢化合物、醇以及氢化碳氢化合物。
13.一种制造静电吸盘组件的方法，包括：
将预先形成的电极埋置在第一高纯度聚芳醚酮层和第二高纯度聚芳醚酮层之间，其中，所述高纯度聚芳醚酮层含有下列各物质的含量低于百万分之一，所述物质包括铝、锑、砷、钡、铍、铋、硼、镉、钙、铬、钴、铜、镓、锗、铪、铟、铁、铅、锂、汞、镁、锰、钼、镍、铌、磷、钾、铷、钪、硒、硅、银、钠、锶、硫、钽、鍗、铊、锡、钛、钨、钒、钇、锌以及锆；
将所述第一和第二高纯度聚芳醚酮层热塑性地接合在一起；并且
将所述第一聚芳醚酮层热塑性地接合至衬底支撑平台。
14.根据权利要求13所述的方法，还包括将所述静电吸盘组件暴露在等离子体环境中，以清洁所述第一和第二聚芳醚酮层的表面，所述等离子体环境包含利用功率源激发的氧气。
15.根据权利要求14所述的方法，其中，所述静电吸盘组件适于在200℃或更高温的热环境中连续使用。
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