CN101867858B - Raised microstructure of silicon based device - Google Patents
Raised microstructure of silicon based device Download PDFInfo
- Publication number
- CN101867858B CN101867858B CN2010102062254A CN201010206225A CN101867858B CN 101867858 B CN101867858 B CN 101867858B CN 2010102062254 A CN2010102062254 A CN 2010102062254A CN 201010206225 A CN201010206225 A CN 201010206225A CN 101867858 B CN101867858 B CN 101867858B
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- Prior art keywords
- protruding
- sidewall
- barrier film
- perforated member
- microcosmic
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
Abstract
The invention discloses an acoustic transducer, including: a covering member having a plane surface with a plurality of perforated member; a substrate connected with the perforated member in an operative way; a diaphragm which is located between the covering member and the substrate and is able to transversely move on the plane in parallel to the surface of the covering member, wherein the covering member includes a connection periphery between the covering member and the substrate, which form patterns to reduce flexibility of an initial bending moment to the covering member. The invention also discloses a raised microstructure on a silica-based device. The raised microstructure includes a film whose rib-shaped sidewall is generally a plane.
Description
Technical field
The present invention relates to miniature silicon transducer, particularly, the present invention relates to be used for the protruding microcosmic parts of silicon-based devices.
Background technology
Known microphone adopts the silica-based condenser transducer in the prior art.Usually, such microphone comprises four parts: a fixing back plate; One has high-flexibility, barrier film (they form two plates of a variable air gap electric capacity jointly) movably; A voltage bias source and a damper.
As from integrated circuit technique, being known, the sonic transducer that uses same procedure to make in batches provides about production cost, repeatability and size and has reduced these interesting characteristics.And this technology can provide unique possibility by the monolithic transducer of wideband operation for setting up under the high sensitivity of equilibrium.It provides a transducer, seldom or under need not improved situation, can be used in the different purposes, such as communication, sound equipment and art of ultrasound, image and movement detection systems.
Acquisition broadband and highly sensitive key are to set up one and have little and the structure barrier film that sensitivity is high.Design in the past has been that 5,146,435 patent and Bernstein U.S. Patent number are to propose in 5,452,268 the patent at the Bernstein U.S. Patent number.In these structures, barrier film is suspended on a plurality of removable shell fragments with fine toughness.Yet the application of shell fragment can make and occur the intrinsic problem that guide sound leaks on the structure, and it can influence the transducer low frequency conversely and fall.Another kind method hangs on barrier film a bit, and it also can provide a kind of extremely sensitive structure.See that the Loeppert U.S. Patent number is 5490220 patent.Unfortunately, the diaphragm material attribute becomes very important in this case, especially causes the crooked intrinsic pressure gradient of free film.This similar problem that relevant transducer low frequency falls repeatable structure finally can appear.
Two mechanical parts, back plate and barrier films are usually through using known in the prior art scrape and being used in combination of volume micro-cutting processing is formed on the single silicon chip.One in two parts is formed on the plane identical with supporting silicon wafer surface usually.Another parts because itself plane normally, through pillar or sidewall support to be higher than the several microns of first parts, so term is referred to as " protruding microstructure ".
Usually, the relative position of two parts can influence the performance of entire device.The film intrinsic pressure that comprises protruding microstructure can make this structure offset design position.Especially in microphone, the variation of air gap can influence sensitivity, noise and the overvoltage response of microphone between barrier film and the back plate.
A plurality of other factors also can influence manufacturing, structure, composition and the whole design of microphone.These problems were discussed more all sidedly, and were 5408731 patent at the U.S. Patent number of Berggvist, and the U.S. Patent number of Loeppert is that the U.S. Patent number of 5490220 patent and Loeppert is to introduce in 5870482 the patent.
In the object lesson of plate as protruding microstructure design, its target is on the exact position of relative barrier film, to set up a hard component behind microphone.A kind of method that reaches this purpose be with the silicon-nitrogen compound thin film deposition in the silica body exhaustion layer that is shaped to form the back plate, this silica body exhaustion layer is used to realize needed separation.This exhaustion layer was removed through known etching work procedure afterwards, to stay protruding back plate.The inherent tensile stress of plate will make its deviation post behind the silicon-nitrogen compound.Should avoid this kind compression, because it can cause structural bending.
Figure 12 has described protruding like this microstructure 110 in the prior art.Be removed with after having stayed protruding microstructure 110 at oxysome, will have the tension force of an inherence in the plate 112.Tension force T comes from manufacturing process and protruding microstructure 110 materials and the difference of supporting wafer 116 flare factors.As shown in the figure, the direct outward radial of tension force T is dispersed.Plate 112 inherent tension force T can form just like the moment shown near the arrow M direction the substrate 118 of sidewall 114.This moment M can form plate 112 trend to wafer 116 skews on the direction of arrow D.The skew meeting of plate 112 causes negative effect to the sensitivity and the performance of microphone.
Disclose some in the prior art and made the invalid unnecessary device of influence of the inherent tension force of the protruding microstructure of film.Wherein the synthetic of film can be adjusted to reduce the intrinsic pressure level through increasing silicon.Yet these technology also have disadvantageous aspect.It can cause film that the corrosion resistance of HF acid is reduced, and has increased the difficulty and the cost of making.The thickness that disclosed other scheme will increase sidewall in the prior art to be supporting protruding back plate, thereby increases the squint ability of inherent trend of sidewall opposing film.Though sound and can accept from geometric angle, when using thin film deposition to realize protruding microstructure, the manufacturing of this thick sidewall will be unrealistic.
The objective of the invention is to solve these and other problems.
Summary of the invention
The such fact of one aspect of the present invention foundation: if barrier film can move freely on its plane, it just has the highest mechanical sensitivity.In addition, if on the supporting ring that barrier film places with perforated member links to each other, just can realize that an acoustic seal closely is to control transducer low frequency drop performance well.In addition, if select a kind of suspension arrangement, it only allows barrier film on its plane, to move and do not participate in the skew of barrier film to the incident sound pressure Reeb, decouples fully to reduce the sensitivity of transducer to external pressure with perforated member.
In one embodiment, the present invention is characterised in that the sonic transducer that comprises a perforated member and the removable barrier film that leaves mutually with perforated member.This is kept by the supporting ring that links to each other with barrier film perforated member placed on it at interval.Adopt the device of suspension barrier film that barrier film is moved freely on its plane, make the mechanical excitability of barrier film realize maximization thus.Between the substrate that supporting ring and perforated member link to each other laterally the restriction barrier film to realize suspension.Be employed in the device that applies electric field between perforated member and the barrier film.When barrier film owing to the incident sound pressure Reeb skew takes place, adopt device to detect changes in capacitance between perforated member and the barrier film.
According to an aspect of the present invention, it provides a kind of sonic transducer, comprising: the covering that comprises the plane surface that wherein has a plurality of perforation; But the substrate that links to each other with said perforated member with mode of operation; Barrier film between said covering and said substrate, said barrier film can laterally move on the plane parallel with the said surface of said covering; Wherein said covering is included in the connection periphery between said covering and the said substrate, and it forms pattern to reduce the sensitivity of said covering to intrinsic inherent bending moment.
Select barrier film thickness and size so that the resonance frequency of barrier film greater than the maximum acoustic operating frequency.Likewise, select perforated member size so that resonance frequency greater than the maximum acoustic operating frequency.The circumference that perforated member links to each other with substrate is made certain shape selectively so that minimum by the curvature of the said perforated member that it causes because of intrinsic pressure.The suspension arrangement of barrier film should make the mechanical resistance that exists on its plane minimum, and keeps between barrier film and perforated member closely.Supporting ring is formed on the perforated member and has confirmed the size of barrier film movable part.On barrier film and perforated member, have one or more hole provide one from the transducer back cavity to around sound travel to remove the atmospheric pressure that upwards crosses barrier film.Transducer low frequency drop performance is limited by angular frequency, said angular frequency said hole and between barrier film and substrate at interval acoustic resistance and combine the acoustic compliance of transducer back cavity and limit.The hole that perforated member has system's pattern is to provide inflow and outflow in the low acoustic resistance of the air of air gap between barrier film and the perforated member movably.System's pattern in hole makes the transducer height fall frequency to be limited by angular frequency that said angular frequency combines the acoustic compliance introducing by the back cavity of transducer and the acoustic resistance of barrier film with being dimensioned to.The noise that produces in the device is promptly mainly planted acoustic resistance thus and is caused.For person skilled in the art, should weigh damping and noise.
Perforated member, supporting ring, suspension arrangement and barrier film obtain from silicon wafer through using micromechanics thin film technique and photolithograph; And can be processed by in the following material one or more, these materials comprise: carbon back condensate, silicon, polycrystalline silicon, amorphous silicon, silica body, silicon-nitrogen compound, carborundum, germanium, GaAs, carbon, titanium, gold, iron, copper, chromium, tungsten, aluminium, platinum, palladium, nickel, tantalum and their alloy.
Another embodiment of the present invention be also embodied in one comprise perforated member and with perforated member away from the sonic transducer of removable barrier film.This spacing is by placing on the barrier film and the supporting ring that links to each other with perforated member maintenance.Adopt suspension arrangement that barrier film can be moved freely on its plane, make the mechanical sensitivity of barrier film maximum thus.Through using having height compliance shell fragment and just can realize this suspension between barrier film and the perforated member.Shell fragment is used in the structure and the dispose procedure of barrier film, except when electrostatic attraction makes barrier film with outside the perforated member supporting structure contacts.With the U.S. Patent number of Bernstein be that the U.S. Patent number of 5146435 patent and Bernstein is that 5452268 patent is said opposite, the shell fragment of this patent is played the part of important role aspect the barrier film acoustic compliance setting up.Adopt device between perforated member and barrier film, to apply electric field.Because incident sound acoustic pressure Reeb produces when squinting, further adopt device to detect changes in capacitance between perforated member and the barrier film when barrier film.
The thickness of selection barrier film and size are so that the resonance frequency of barrier film is greater than the maximum acoustic operating frequency.Equally, the size of selecting perforated member is so that resonance frequency is greater than the maximum acoustic operating frequency.The circumference that perforated member links to each other with substrate is made certain shape selectively so that minimum by the curvature of perforated member that said its intrinsic pressure causes.Suspension shell fragment with height compliance is made enough firmly; It realizes this kind structure through micro mechanical technology; And enough acoustic compliances with can be mechanically with perforated member from barrier film get on lotus root and guarantee barrier film and shell fragment resonance frequency and transducer designs on the plane low fall frequency compare as much as possible little, to prevent in barrier film running plane vibration taking place.Supporting ring is formed on the perforated member and has set the size of barrier film movable part.The height of supporting ring is confirmed the initial distance between barrier film and the perforated member.On supporting ring, have one or more hole provide one from the transducer back cavity to around sound travel to remove the atmospheric pressure upwards cross barrier film.The low frequency of falling of transducer is limited by angular frequency, and said angular frequency is limited the acoustic resistance in hole and the acoustic compliance of back cavity.The hole that perforated member has system's pattern with give inflow and outflow in movably between barrier film and the perforated member air of air gap low acoustic resistance is provided.System's pattern of selecting hole and size are so that the transducer height falls frequency is limited by angular frequency, and this angular frequency is by the acoustic compliance introducing of back cavity that is combined transducer by acoustic resistance and barrier film.Perforated member, supporting ring, suspension arrangement and barrier film obtain from silicon wafer through using micromechanics thin film technique and photolithograph technology; And can process owing to one or more of following material, these materials comprise: carbon back condensate, silicon, polycrystalline silicon, amorphous silicon, silica body, silicon-nitrogen compound, carborundum, germanium, GaAs, carbon, titanium, gold, iron, copper, chromium, tungsten, aluminium, platinum, palladium, nickel, tantalum and their alloy.
Another aspect of the present invention provides a kind of modifying device that is used for the protruding microstructure of silicon-based devices, and these protruding microcosmic parts comprise: the film that is the plane usually; Support the sidewall of film; Sidewall on the said protruding microcosmic parts is connected on the silicon chip in its bases; Wherein sidewall is the rib shape and forms a plurality of ridges and groove.According to the present invention embodiment in this respect, the present invention provides a kind of protruding microstructure that is applied to silicon-based devices, and it comprises flat film and the sidewall that is the support film of rib shape.
Through to the description of following preferred embodiment and with reference to accompanying drawing, of the present inventionly saidly will become more obvious with other aspects and advantage.
Description of drawings
Fig. 1 has the amplification profile of the sonic transducer of clamp suspension along 1-1 line among Fig. 2 according to the present invention;
Fig. 2 is the vertical view that the part of sonic transducer shown in Figure 1 is analysed and observe;
Fig. 3 is the profile perspective of sonic transducer shown in Figure 2 along 3-3 line among Fig. 2;
Fig. 4 is that the part that the part of the sonic transducer similar with Fig. 2 is analysed and observe is overlooked enlarged drawing, and wherein perforated member comprises the connection periphery of a selected shape;
Fig. 5 has the profile of the sonic transducer of height compliance shell fragment suspension at Fig. 6 5-5 along the plane according to the present invention;
Fig. 6 is the vertical view that the part of sonic transducer shown in Figure 5 is analysed and observe;
Fig. 7 is the profile perspective of the sonic transducer of Fig. 6 upper edge plane 7-7;
Fig. 8 is the part amplification plan view of analysing and observe similar in appearance to the part of the sonic transducer of Fig. 5, and wherein perforated member comprises the connection periphery of a selected shape;
Fig. 9 shows when keeping a fixed current on the microphone, is used to detect the circuit diagram of microphone capacitance variations;
Figure 10 shows when keeping a fixed voltage on the microphone, is used to detect the circuit diagram of microphone capacitance variations;
Figure 11 is the profile perspective of sonic transducer as shown in Figure 4;
Figure 12 is the profile of protruding microstructure commonly known in the art;
Figure 13 is the profile perspective that is embodied in instance convexity microstructure of the present invention;
Figure 14 is the profile of protruding microstructure shown in Figure 13; With
Figure 15 is along the plane graph of 11-11 line among Figure 13.
Embodiment
Because the present invention comprises a plurality of multi-form instances; Only is the instance under principle of the present invention with showing and introduce the preferred embodiments of the present invention in detail in the drawings to understand the disclosure, and can not constitute restriction to extensive aspect of the present invention because of the embodiment that shows.
With reference now to accompanying drawing,, particularly Fig. 1-3 is open according to sonic transducer of the present invention.The perforated member 40 that sonic transducer 10 comprises conductive diaphragm 12 and supported and opened in 20 minutes by the air gap by substrate 30.One very narrow air gap or width 22 are present between barrier film 12 and the substrate 30 to allow barrier film on its plane, to move freely, and discharge the diaphragm material internal pressure thus and barrier film is decoupled from substrate.A plurality of little sawtooth 13 are formed on the barrier film to stop the stiction between the barrier film and substrate on the narrow crack.Barrier film 12 laterally move the restriction that receives the supporting structure 41 on the perforated member 40, it also is used to the initial distance that keeps suitable between barrier film and the perforated member.Supporting structure 41 perhaps is continuous loop or is a plurality of projections.If supporting structure 41 is a continuous loop, place the barrier film 12 on the supporting structure 41 to form acoustic seal closely, to realize the low frequency drop performance of excellent control transducer.If supporting structure 41 is a plurality of projections, acoustic seal can form through the distance between the restriction projection, narrow air gap 22 or their combination.
Referring to Fig. 5 to Fig. 7, wherein show the change embodiment of sonic transducer of the present invention.The perforated member 40 that transducer 50 comprises that conductive diaphragm 12 and substrate 30 supports and separated by air gap 20.Barrier film 12 links to each other with substrate through a plurality of shell fragments 11, and it is used for mechanically barrier film being decoupled from substrate, thus the intrinsic pressure on eradicating a mental barrier.And barrier film has discharged on the substrate and the pressure in the encapsulation.
The laterally mobile restriction that receives supporting structure 41 on the perforated member 40 of barrier film 12, it also is used to keep the initial distance between barrier film and the perforated member 40.Supporting structure 41 perhaps is continuous loop or is a plurality of projections.If supporting structure 41 is continuous loops, place the barrier film 12 on the supporting structure 41 to form acoustic seal closely, to form the transducer low frequency drop performance of excellent control.If supporting structure 41 is a plurality of projections, can be through the distance between the restriction projection or through providing an effective long path to form acoustic seal around barrier film and through hole 21.
Under running status, apply an electromotive force between the electrode 42 on conductive diaphragm 12 and the perforated member.The electric charge of electromotive force and conductors can produce electric suction between barrier film and perforated member.It ties the result, and free barrier film 12 moves up to it to perforated member 40 and is parked on the supporting structure 41, and it confirms to have clear air gap 20 and pass through the initialization point that path 14 produces the transducer of sound leakages.When running into acoustic energy, barrier film 12 produce the transverse pressure differences so that its to perforated member 40 near or away from.The skew of barrier film 12 can cause the variation of electric field and between barrier film 12 and perforated member 40, produce capacitance variations thus.Like this, the electric capacity of transducer receives the modulation of acoustic energy.
Fig. 9 shows a kind of electric capacity method for modulation detection.On testing circuit 100, transducer 102 and direct voltage source 101 with have high input impedance unity gain amplifier 104 and link to each other.One biasing resistor 103 is connected to ground with amplifier input dc power gesture, whereby DC potential " V
Biasing" put on the transducer.Suppose on this circuit transducer, to apply a fixed current, the change of electric capacity can cause electromotive force generation change on the transducer, and it is measured by unity gain amplifier.
Figure 10 shows the another kind of method of electric capacity modulation detection.On testing circuit 200, transducer 202 links to each other with the current amplifier structure 205 with feedback resistance 203 and electric capacity 204 with direct voltage source 201.Feedback resistance 203 is guaranteed circuit DC stabilization property and hold amplifier input dc power gesture, DC potential " V thus
Biasing-Vb " put on transducer on.Supposing has a fixed potential on this circuit transducer; Virtual ground principle according to amplifier; The change of electric capacity can cause change in charge on the transducer, thereby causes the change of the input of feedback capacity, and between amplifier negative pole and electrode input end, forms a biasing thus.Amplifier provides a corresponding electric charge to remove biasing, to cause output voltage " V at the output of feedback capacity
Output" change.Current gain in this circuit is confirmed by the ratio of initial transducer capacitance and feedback capacity.The advantage of this testing circuit is that the virtual ground principle of amplifier removed transducer parasitic capacitance electrical ground, otherwise it can weaken microphone electric capacity dynamic effects.And, should consider to reduce parasitic capacitance so that the gain of going up noise and inherent amplifier noise at signal " Vb " minimizes.
Figure 13 and 14 shows an embodiment of the protruding micro-structural 110 of the present invention.The back plate 112 that protruding micro-structural 110 comprises a common rounded thin film planar or supported by sidewall 114.
The those of ordinary skill of correlation technique example should be appreciated that protruding micro-structural 110 is by using deposition and etching technique to constitute at the silicon carbon compound diaphragm 112 of the consumption silica layer top layer deposition of silicon wafer 116.For clarity sake, will consume silica layer in the diagram removes from circuit.Sidewall 114 on the protruding micro-structural 110 is connected on the silicon wafer 116 at its substrate 118 places, and links on the plate 112 in end opposite.Sidewall 114 is vertical with plate 112 usually, and what be worth explanation certainly is between sidewall 114 and plate 112, also can adopt other angle.
Figure 15 shows the plane graph of assembly among Figure 13, the surface of sidewall 114 among the present invention wherein shown in section.Can find out that sidewall 114 of the present invention is the rib shape among Figure 13-15, form a plurality of cycle ridges 120 and groove 122.In preferred embodiment, ridge 120 and groove 122 parallel and equidistant intervals are to form wave structure.In addition, preferred embodiment adopts the ridge 120 and groove 122 of projected square part.Under this mode sidewall being made undulatory effect is the segment 124 that forms like the interior emitting shape sidewall 114 the tension force T in the plate 112.Through making sidewall 114 parts form the emitting shape as tension force T, sidewall 114 is strengthened.In the prior art with the tangent sidewall 114 of plate 112 and the present invention in emitting shape part 124 compare and be easier to bending.
Can imagine the geometry that is different from the corrugated shown in Figure 13-15 or ridge 120 and groove 122 that also can adopt effectively with the ability that improves sidewall 114 moment of resistance M, the geometry shown in Figure 13-15 is not to be understood that and is a kind of restriction to the scope of the invention.
For instance, common circular geometry, the common triangle geometry structure or the combination of any of these geometry or distortion or other structure also can be used to form ridge 120 and groove 122.
In a preferred embodiment, corrugated radially, thereby sidewall 114 with the back plate 112 tension force parallel.And consumable material utilizes this mode etching, and when plate behind the film 112 was deposited, sidewall 114 covered to form excellent step with respect to the substrate run-off the straight.
Though the present invention discloses through preferred embodiment and explains; But will be understood that those skilled in the art on this basis to be made various changes and can not break away from invention protection range and the theme tone that limits claim that protection scope of the present invention is only limited claim.
Claims (13)
1. protruding microcosmic parts (110) that are used for silicon-based devices, protruding microcosmic parts (110) comprising:
Usually the film (112) that is the plane;
Support the sidewall (114) of film (112);
Said sidewall (114) on the said protruding microcosmic parts (110) is located to be connected on the silicon chip (116) in its substrate (118);
Wherein sidewall (114) is the rib shape and forms a plurality of ridges and groove.
2. protruding microcosmic parts as claimed in claim 1 is characterized in that, the cross section of described sidewall is corrugated on the plane of said substrate surface.
3. protruding microcosmic parts as claimed in claim 1 is characterized in that, rib has curved cross section usually.
4. protruding microcosmic parts as claimed in claim 1 is characterized in that, rib has cross section triangular in shape usually.
5. protruding microcosmic parts as claimed in claim 1 is characterized in that rib has the cross section that is rectangle usually.
6. protruding microcosmic parts as claimed in claim 1 is characterized in that sidewall comprises a plurality of ribs.
7. protruding microcosmic parts as claimed in claim 6 is characterized in that, the distance that said rib equates around sidewall spacers.
8. protruding microcosmic parts as claimed in claim 1 is characterized in that:
Said flat film has first thickness and periphery;
Said sidewall has second thickness;
Said sidewall is supported said flat film on the said periphery of said second thickness apart from silicon chip;
Wherein sidewall is the rib shape and forms a plurality of ridges and groove.
9. protruding microcosmic parts as claimed in claim 8 is characterized in that said flat film is rounded, and said first thickness is compared little with the diameter of said flat film.
10. protruding microcosmic parts as claimed in claim 8 is characterized in that, said second thickness first thickness approximately equal said with it.
11. protruding microcosmic parts as claimed in claim 8 is characterized in that, said periphery is compared with said second thickness with the distance between the said substrate and is wanted big.
12. protruding microcosmic parts as claimed in claim 8 is characterized in that, it is inwardly perhaps outside with respect to the center of said flat film that rib follows peripheral periodic path closely.
13. protruding microcosmic parts as claimed in claim 12 is characterized in that said path is curved.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63740100A | 2000-08-11 | 2000-08-11 | |
| US09/637,401 | 2000-08-11 | ||
| US09/910,110 | 2001-07-20 | ||
| US09/910,110 US6987859B2 (en) | 2001-07-20 | 2001-07-20 | Raised microstructure of silicon based device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN018140300A Division CN1498513B (en) | 2000-08-11 | 2001-08-10 | Miniature broadband transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101867858A CN101867858A (en) | 2010-10-20 |
| CN101867858B true CN101867858B (en) | 2012-02-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102062254A Expired - Lifetime CN101867858B (en) | 2000-08-11 | 2001-08-10 | Raised microstructure of silicon based device |
| CN018140300A Expired - Lifetime CN1498513B (en) | 2000-08-11 | 2001-08-10 | Miniature broadband transducer |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN018140300A Expired - Lifetime CN1498513B (en) | 2000-08-11 | 2001-08-10 | Miniature broadband transducer |
Country Status (9)
| Country | Link |
|---|---|
| EP (2) | EP1310136B1 (en) |
| JP (3) | JP4338395B2 (en) |
| KR (1) | KR100571967B1 (en) |
| CN (2) | CN101867858B (en) |
| AT (2) | ATE392790T1 (en) |
| AU (1) | AU2001281241A1 (en) |
| DE (2) | DE60133679T2 (en) |
| DK (2) | DK1469701T3 (en) |
| WO (1) | WO2002015636A2 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP4338395B2 (en) | 2009-10-07 |
| DE60133679T2 (en) | 2009-06-10 |
| CN1498513B (en) | 2010-07-14 |
| ATE392790T1 (en) | 2008-05-15 |
| DE60118208D1 (en) | 2006-05-11 |
| DK1310136T3 (en) | 2006-07-31 |
| EP1469701B1 (en) | 2008-04-16 |
| ATE321429T1 (en) | 2006-04-15 |
| CN101867858A (en) | 2010-10-20 |
| JP5049312B2 (en) | 2012-10-17 |
| JP2004506394A (en) | 2004-02-26 |
| WO2002015636A3 (en) | 2002-10-24 |
| DE60118208T2 (en) | 2007-04-12 |
| DK1469701T3 (en) | 2008-08-18 |
| KR100571967B1 (en) | 2006-04-18 |
| EP1310136B1 (en) | 2006-03-22 |
| JP2007116721A (en) | 2007-05-10 |
| DE60133679D1 (en) | 2008-05-29 |
| EP1310136A2 (en) | 2003-05-14 |
| CN1498513A (en) | 2004-05-19 |
| AU2001281241A1 (en) | 2002-02-25 |
| KR20030033026A (en) | 2003-04-26 |
| JP2009153203A (en) | 2009-07-09 |
| EP1469701A3 (en) | 2005-11-16 |
| EP1469701A2 (en) | 2004-10-20 |
| WO2002015636A2 (en) | 2002-02-21 |
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