CN101359703B - Manufacturing method for strip material of embedded ejection forming conductive wire frame - Google Patents
Manufacturing method for strip material of embedded ejection forming conductive wire frame Download PDFInfo
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- CN101359703B CN101359703B CN2007101358786A CN200710135878A CN101359703B CN 101359703 B CN101359703 B CN 101359703B CN 2007101358786 A CN2007101358786 A CN 2007101358786A CN 200710135878 A CN200710135878 A CN 200710135878A CN 101359703 B CN101359703 B CN 101359703B
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- embedded
- lead frame
- billot
- formation process
- device region
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Abstract
Disclosed is a method for fabricating an embedded injection molding lead frame strip material which has dense assemblies. Firstly a lead frame strip material with array assembly areas is formed. Each array assembly area comprises two metal parts which serve as a chip connecting part, a wire bonding part and two external electrical connecting conductors. Then, a metal layer with high conductivity and viscosity is electroplated on the lead frame strip material. Finally, embedded injection molding structures are formed in the array assembly areas through multiple embedded injection molding processes so as to surround the parts on the lead frame strip material except the external electrical connecting conductors. The embedded injection molding processes are carried out in every two or more array assemble areas so as to mold the lead frame strip material.
Description
Technical field
The invention belongs to the manufacture method of a kind of embedded ejection formation (pre-molding) lead frame billot, refer to a kind of manufacture method especially with embedded ejection formation lead frame billot of intensive assembly.The disclosed technology of the present invention is applicable to surface mount (surface-mountable) electronic building brick, for example, and light-emitting diode.
Background technology
As it is known to be familiar with led technology field person, light-emitting diode is made up of a compound semiconductor, as GaAs, AlGaAs, GaN, InGaN or AlGaInP, as a transmitting illuminant, light-emitting diode is a kind ofly can launch the various semiconductor subassemblies that coloured light is arranged.
When semiconductor technology was advanced by leaps and bounds, the light-emitting diode that has high brightness and excellent quality recently is volume production also, moreover the technology of white light and blue light also develops.Thereby light-emitting diode can be widely used in display, light source of future generation and product of the same type.In addition, the surface adhesive light-emitting diode assembly is also by practical application.
In order to expand utilizable area and to reduce cost, present many developments in science and technology are just being attempted electronic building brick is made into the little physical dimension of trying one's best, and arrange more assembly in fixing area.For example, the backlight of mobile phone key need very undersized light-emitting diode.
The technology of the assembly of dense arrangement more made is to be worth using, and is to be difficult to reach at fixing area make the assembly that very dense is arranged but use conventionally known technology.
Fig. 1 a to Fig. 1 c shows the top view of the fabrication schedule of traditional embedded ejection formation lead frame billot, as shown in Figure 1a, form a lead frame billot 10 with array component zone 22a by stamped metal thin plate or sheet metal, this lead frame billot 10 is to be used for placing the light-emitting diode chip for backlight unit (not shown).Each device region 22a comprise two metal part 24a and 26a in order to place light-emitting diode chip for backlight unit thereon, as routing portion and outside electrically bonding conductor, device region 22a also comprises two blank spaces zone 28a.
Afterwards, plating one has the metal level 20 of high conductivity and tackness on this lead frame billot 10, shown in Fig. 1 b.
By a plurality of embedded ejection formation structure 42as that present array-like of an embedded jetting formation process formation around lead frame billot 10, these a little embedded ejection formation structure 42a around the zone be not comprise the electrode part that is used as the exterior guiding electrode, shown in Fig. 1 c.The fabrication schedule of this traditional embedded ejection formation lead frame billot is to be a single cold pouring channel technology, and its method is to utilize branch's running channel 32 of a sprue 30 and multichannel to finish.Each the embedded ejection formation structure 42a that utilizes embedded jetting formation process to form has an indent to sentence the polyhedron of placing suitable chip, and the surface in the face of device region 22a in the interior recess is open shape.Fig. 2 shows detailed embedded ejection formation structure 42a and formed device region 22a, and final device region 22a comprises outer electrode 44a and the 46a that a functional areas 48a, embedded ejection formation structure 42a, blank spaces zone 28a and two expose.Functional areas 48a has 47a of chip join portion and the 49a of routing portion.The outer electrode 44a of device region 22a and 46a will be amounted to the electrode structure that can stick together to form in follow-up packaging technology.
Yet, the shortcoming of the technology of this traditional embedded ejection formation lead frame billot is low yield and the waste that can cause lead frame and molding material, and above-mentioned shortcoming is to result from need the take up room loose arrangement in the active element zone of being caused of branch's running channel in the single ejaculation model technology.Shown in Fig. 1 a to Fig. 1 c,, make that this traditional embedded jetting formation process is to be low a large amount of production efficiencys because the closeness of device region is the restriction that is subjected to single ejaculation model technology.What is more, adopt this single ejaculation model technology, the actual area that takies of assembly is considerably less, therefore, obviously reduces the utilance of precious material.In addition, again because device region is distributed in diverse location, and sprue only has one, when engineering plastic materials (molding material) when flowing to device region by sprue, engineering plastic materials temperature in sprue branch's running channel far away declines to a great extent, making engineering plastic materials not reach arrival purpose ejection formation zone just has partially hardened in running channel, makes the ejection formation semi-manufactured goods quality not good, and causes bad lead frame finished product.
Summary of the invention
The purpose of this invention is to provide a kind of manufacture method with embedded ejection formation lead frame billot of intensive assembly, its feature by the multiple embedded jetting formation process that utilizes hot runner is reached intensive arrangement of components, and using significantly increases stock utilization and a large amount of production efficiency.
For reaching above-mentioned purpose, the invention provides a kind of manufacture method with embedded ejection formation lead frame billot of intensive assembly, at first form a lead frame billot with array component zone, each device region comprises that two metal part are in order to as a chip join portion, a routing portion and two outside electrically bonding conductors.Secondly, has the metal level of high conductivity and tackness in the plating one that powers on of this lead frame billot.At last, form an embedded ejection formation structure with around this lead frame billot remainder a little outside electrically bonding conductors except this by a multiple embedded jetting formation process in each device region, each embedded jetting formation process is that one or more device region of every interval is come this lead frame billot of model, this multiple embedded jetting formation process includes at least one first time of an embedded jetting formation process and embedded jetting formation process for the second time, this first time, embedded jetting formation process was the device region among wherein plural first row of processing earlier, be separated with the width of at least one device region between wherein wantonly two adjacent first rows mutually, this is the embedded jetting formation process then processing device region among plural number second row in addition then for the second time, is separated with the width of at least one device region between wherein wantonly two adjacent second rows mutually.
For above and other objects of the present invention, feature and advantage can be become apparent, below cooperate graphic and preferred embodiment with explanation the present invention.
Description of drawings
Fig. 1 a to Fig. 1 c shows the top view of the fabrication schedule of traditional embedded ejection formation lead frame billot.
Fig. 2 shows the detailed embedded ejection formation structure and the schematic diagram of formed device region.
Fig. 3 shows an example of lead frame billot of the present invention.
Fig. 4 shows an example of plating back lead frame billot of the present invention.
Fig. 5 a, 5b and Fig. 6 show the multiple embedded jetting formation process of main embodiment of the present invention.
Fig. 7 shows the complete layout schematic diagram of finishing the lead frame billot behind the embedded ejection formation of the present invention.
Fig. 8 and Fig. 9 show the multiple embedded jetting formation process of another embodiment of the present invention.
Hot runner in Figure 10 displayed map 8 is surrounded with a heating plant.
The primary clustering symbol description
10,60 lead frame billots
20,70 electroplated metal layers
22,22a device region
24,24a metal part
26,26a metal part
80,90 hot runners
82,92 branch's running channels
A1-A9, B1-B6 humidity province
28,28a blank spaces zone
42 embedded ejection formation structures
30 sprues
32 branch's running channels
48,48a functional areas
44,44a, 46,46a outer electrode
47,47a chip join portion
49,49a routing portion
Embodiment
The present invention discloses a kind of manufacture method with embedded ejection formation lead frame billot of intensive assembly, is applicable to the surface mount electronic building brick, for example, and light-emitting diode.In order to arrange the assembly of maximum quantity in an area of fixing, the distance of dwindling adjacent component is the method that is worth application.Will reach the distance of minimum adjacent component in a lead frame billot scope, be to use multiple embedded jetting formation process, significantly increases stock utilization and a large amount of production efficiency and reach.
A lead frame billot 60 with array component zone 22 shown among Fig. 3 is to illustrate with planar fashion, and this lead frame billot 60 is by stamped metal thin plate or sheet metal and form and can be used for placing the light-emitting diode chip for backlight unit (not shown).This lead frame billot 60 is for selecting for use in the alloy of metal by iron, copper, silver, gold, aluminium, nickel, palladium, chromium or above-mentioned metal.Each device region 22 comprise two metal part 24 and 26 in order to place light-emitting diode chip for backlight unit thereon, as routing portion and outside electrically bonding conductor, device region 22 also comprises two blank spaces zones 28.
Secondly, plating one has the metal level 22 of high conductivity and tackness on this lead frame billot 60, as shown in Figure 4.This electroplated metal layer 70 is to select for use in the alloy by copper, silver, gold, nickel, palladium or above-mentioned metal.
Then, form around the embedded ejection formation structure 42 of the array of lead frame billot 60 by a multiple embedded jetting formation process, 42 on these a little embedded ejection formation structures around the zone be not comprise the electrode part that is used as the exterior guiding electrode, shown in Fig. 5 a.Illustrational each embedded jetting formation process is that every interval one device region 22 is come model lead frame billot 60 among Fig. 5 a.Therefore, the multiple embedded jetting formation process of finishing every interval one device region 22 is need twice embedded jetting formation process, for example, for the first time embedded jetting formation process is processing first and third, five, seven earlier ... wait the device region 22 among the odd number row, embedded jetting formation process then then processes second, four, six, eight for the second time ... etc. the device region 22 in the even rows.The complete layout of finishing the lead frame billot 60 behind the embedded ejection formation as shown in Figure 7.Employed molding material is to be the plastic opaque material in the embedded jetting formation process.
For the quality that promotes embedded ejection formation structure and effectively utilize molding material, the present invention adopts hot runner in embedded jetting formation process.Embedded jetting formation process of the present invention is a kind of multiple embedded ejection formation and hot runner technology, shown in Fig. 5 a, is to use branch's running channel 82 of hot runner 80 and multichannel to realize.
Moreover each hot runner 80 of embedded jetting formation process can have the temperature of himself, as shown in Figure 6.Embedded jetting formation process among Fig. 5 a uses 9 hot runners 80, and these 9 hot runners 80 are divided into 9 humidity provinces such as A1 to A9.The technological temperature scope of each humidity province is to decide according to selected molding material kind, generally is between 150 to 400 ℃.So control the technological temperature scope, make the finished product of embedded ejection formation obtain better yield by the temperature of adjusting each hot runner.
Similarly, the formed embedded ejection formation structure 42 of embedded jetting formation process of the present invention also is to sentence the polyhedron of placing suitable chip for having an indent, and is opening on the surface in the face of device region 22 in the interior recess.Fig. 5 b shows detailed embedded ejection formation structure 42 and formed device region 22, and final device region 22 comprises functional areas 48, embedded ejection formation structure 42, blank spaces zone 28 and two outer electrodes that expose 44 and 46.Functional areas 48 have chip join portion 47 and routing portion 49.The outer electrode 44 of device region 22 and 46 will be amounted to the electrode structure that can stick together to form in follow-up packaging technology.
Another alternate embodiments, each another selection of embedded jetting formation process of the present invention are that every interval two device region 22 are come model lead frame billot 60.Therefore, the multiple embedded jetting formation process that finish every interval two device region 22 is need three embedded jetting formation process.The complete layout of finishing the lead frame billot 60 behind the embedded ejection formation as shown in Figure 7.The another kind of multiple embedded jetting formation process of present embodiment is shown in Fig. 8, and the embedded jetting formation process of each of present embodiment is to use branch's running channel 92 of hot runner 90 and multichannel to realize, as shown in Figure 8.
Similarly, each hot runner 90 of embedded jetting formation process can have the temperature of himself, as shown in Figure 9.Embedded jetting formation process among Fig. 8 uses 6 hot runners 90, and these 6 hot runners 90 are divided into 6 humidity provinces such as B1 to B6.
Each hot runner 90 periphery can be surrounded with a heating plant 93 so that keep branch's running channel 92 in a specific range of temperatures, heating plant 93 can be unlikely to because the temperature field skewness engineering plastic materials in the hot runner 90 by heat supplied, make engineering plastic materials not reach arrival purpose ejection formation zone and partially hardened is just arranged in running channel, make the ejection formation semi-manufactured goods quality not good, and cause bad lead frame finished product.
With traditional method relatively, the present invention has the following advantages, at first, embodiments of the invention are to form the lead frame billot by stamped metal thin plate or sheet metal, technology is simple and with low cost.Secondly, owing to can obtain maximum assembly closeness, therefore can significantly increase stock utilization and a large amount of production efficiency.At last, owing to can control the temperature of each hot runner respectively, therefore can promote the yield of finished product.
Claims (9)
1. the manufacture method with embedded ejection formation lead frame billot of intensive assembly is applicable to light-emitting diode, comprises the following steps:
Form a lead frame billot with array component zone, this each device region comprises that two metal part are in order to as a chip join portion, a routing portion and two outside electrically bonding conductors; And
Form an embedded ejection formation structure with around this lead frame billot remainder except described two outside electrically bonding conductors by a multiple embedded jetting formation process in this each device region, this each embedded jetting formation process is that one or more device region of every interval is come this lead frame billot of model, this multiple embedded jetting formation process includes at least one first time of an embedded jetting formation process and embedded jetting formation process for the second time, this first time, embedded jetting formation process was the device region among wherein plural first row of processing earlier, be separated with the width of at least one device region between wherein wantonly two adjacent first rows mutually, this is the embedded jetting formation process then processing device region among plural number second row in addition then for the second time, is separated with the width of at least one device region between wherein wantonly two adjacent second rows mutually.
2. the manufacture method with embedded ejection formation lead frame billot of intensive assembly as claimed in claim 1, it is characterized in that: more comprise, in this lead frame billot metal level that plating one has high conductivity and a tackness that powers on, this electroplated metal layer is to select for use in the alloy by copper, silver, gold, nickel, palladium or above-mentioned metal.
3. the manufacture method with embedded ejection formation lead frame billot of intensive assembly as claimed in claim 1 is characterized in that: this lead frame billot is a metal and selecting for use in the alloy by iron, copper, silver, gold, aluminium, nickel, palladium, chromium or above-mentioned metal.
4. the manufacture method with embedded ejection formation lead frame billot of intensive assembly as claimed in claim 1 is characterized in that: the method that forms this array component zone is to use Sheet Metal Forming Technology to come this lead frame billot of punching press.
5. the manufacture method with embedded ejection formation lead frame billot of intensive assembly as claimed in claim 1, it is characterized in that: employed molding material is the plastic opaque material in this embedded jetting formation process.
6. the manufacture method with embedded ejection formation lead frame billot of intensive assembly as claimed in claim 1, it is characterized in that: this forms the step of embedded ejection formation structure, more is included in this embedded jetting formation process and adopts hot runner.
7. the manufacture method with embedded ejection formation lead frame billot of intensive assembly as claimed in claim 6, it is characterized in that: this hot runner can be divided into the different temperatures district.
8. the manufacture method with embedded ejection formation lead frame billot of intensive assembly as claimed in claim 7 is characterized in that: the technological temperature scope of this each humidity province is between 150 to 400 ℃.
9. the manufacture method with embedded ejection formation lead frame billot of intensive assembly as claimed in claim 6, it is characterized in that: this hot runner connects the temperature that a heating plant comes the maintaining heat running channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101358786A CN101359703B (en) | 2007-07-30 | 2007-07-30 | Manufacturing method for strip material of embedded ejection forming conductive wire frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101358786A CN101359703B (en) | 2007-07-30 | 2007-07-30 | Manufacturing method for strip material of embedded ejection forming conductive wire frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101359703A CN101359703A (en) | 2009-02-04 |
| CN101359703B true CN101359703B (en) | 2011-04-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101358786A Expired - Fee Related CN101359703B (en) | 2007-07-30 | 2007-07-30 | Manufacturing method for strip material of embedded ejection forming conductive wire frame |
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| Country | Link |
|---|---|
| CN (1) | CN101359703B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143981A (en) * | 1998-06-24 | 2000-11-07 | Amkor Technology, Inc. | Plastic integrated circuit package and method and leadframe for making the package |
| CN1325138A (en) * | 2000-05-18 | 2001-12-05 | 顺德工业股份有限公司 | Manufacture of wire holder in double electroplating mold |
| US6798047B1 (en) * | 2002-12-26 | 2004-09-28 | Amkor Technology, Inc. | Pre-molded leadframe |
-
2007
- 2007-07-30 CN CN2007101358786A patent/CN101359703B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143981A (en) * | 1998-06-24 | 2000-11-07 | Amkor Technology, Inc. | Plastic integrated circuit package and method and leadframe for making the package |
| CN1325138A (en) * | 2000-05-18 | 2001-12-05 | 顺德工业股份有限公司 | Manufacture of wire holder in double electroplating mold |
| US6798047B1 (en) * | 2002-12-26 | 2004-09-28 | Amkor Technology, Inc. | Pre-molded leadframe |
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| Publication number | Publication date |
|---|---|
| CN101359703A (en) | 2009-02-04 |
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Granted publication date: 20110406 Termination date: 20160730 |