CN101292330A - 化学增强的封装单分方法 - Google Patents

化学增强的封装单分方法 Download PDF

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CN101292330A
CN101292330A CNA2005800149782A CN200580014978A CN101292330A CN 101292330 A CN101292330 A CN 101292330A CN A2005800149782 A CNA2005800149782 A CN A2005800149782A CN 200580014978 A CN200580014978 A CN 200580014978A CN 101292330 A CN101292330 A CN 101292330A
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metal
sawing
inter
matrix
chemical
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CN101292330B (zh
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哈姆扎·耶尔马兹
安东尼·谢
曾小光
黄熙明
王黎明
张以举
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GEM ELECTRONICS (SHANGHAI) CO Ltd
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Abstract

通过掩模图案化及化学曝露与物理锯割相结合来实现对制作成一共用基质一部分的各个电子封装的单分(singulation)。在根据本发明的单分方法的一个实施例中，在所述基质的封装间区域内锯出一初始的浅锯口便会使下面的金属经受后续的化学蚀刻步骤。在一替代实施例中，可在所述基质上对一单独的光阻剂掩模进行图案化以有选择地使封装间区域中的金属经受化学蚀刻。

Description

化学增强的封装单分方法
技术领域
背景技术
图1A显示-用于容纳一半导体装置的传统的方形扁平无引脚(QFN)封装的一底侧平面图。图1B显示定位于一PC板上的图1A所示传统QFN封装沿B-B′线截取的剖面图。
QFN封装100包括上面制作有电有源结构的半导体电路小片102。电路小片102通过电路小片附着粘合剂106粘附至下面引线框架104的电路小片焊垫104a部分上。显示于图1B中的电路小片及引线框架的相对厚度及本专利申请案的所有其它图式均未按比例绘制。引线框架104还包括通过接合线108与电路小片102进行电连通的非整体引脚部分104b。接合线108也实现电路小片102与电路小片焊垫104a之间的电连通。
塑料模件109囊封除分别为引线框架部分104a及104b的外露部分104a′及104b′外的所有部分。出于本专利申请案之目的，术语“囊封”是指将一元件部分地或全部地包封于一周围材料中，通常是将引线框架的金属包封于一周围介电材料(例如塑料)内。
引线框架104上表面的某些部分带有通过电镀所形成的银(Ag)105。引线框架104的下表面带有一焊料层；铅-锡、锡或对于无铅产品而言为锡合金。引线框架104的下表面及上表面均带有一通过电镀形成的用于QFN的预镀引线框架的Ni-Pd-Au或Ni-Au层107。
QFN封装100通过较佳具有所示圆形形状的焊料114紧固至下面PC板112上的迹线110。焊料114的导电属性使电信号能够在引线框架部分104a及104b与下面的迹线110之间传送。
刚才所述的QFN封装通常制作成一界定所述电路小片焊垫及引线的较大的连续金属基质的一部分。然后，通过例如锯割等物理方法切断所述金属连接来从所述基质中单分出单个的封装。
图1C显示在单分前一QFN封装基质196的一平面图。图1D显示一放大的剖面图，其显示一沿图1C所示的线1D-1D′截取的单个封装的电路小片焊垫及引线。图1D显示模制的封装基质196由锯带199支撑。
图1E显示一图1C所示封装间区域沿线1E-1E′截取的剖面图。图1E显示各毗邻封装的引线104b由一称作系杆198的共用整体金属片形成。通常，通过沿包含这些共用金属系杆的封装间区域中的“锯道”192进行物理锯割来从所述共用基质中单分出单个封装。线1E-1E′代表此种锯道。
图1F显示一在传统锯割封装单分过程的一初始步骤后沿带有预镀Ni-Pd-Au引线框架的图1C所示封装基质的线1E-1E′的简化剖面图。初始锯口160的宽度162足以移除整个Ni/Pd/Au电镀层105及沿所述锯道的系杆198的底层Cu合金的一部分。
图1G显示一在封装单分过程期间进行连续锯割后沿图1C所示封装基质的线1E-1E′的简化剖面图。图1G显示完全移除所述连接用金属系杆的Cu合金，其中各毗邻的封装仅通过由下面的锯带199支撑的共用塑料模件109在所述基质中固定在一起。由于图1G所示的各个封装的引线104b不再共享一共用金属片，因此其彼此电隔离。
图1H显示一在传统锯割封装单分过程的一最终步骤后沿图1C所示封装基质的线1E-1E′的简化剖面图。在图1H中，锯割连续贯穿塑料模件109，从而使此时仍仅通过下面的锯带199结合在一起的各个封装完全实体分离。单分后的封装100此时可自锯带199拔去以供安装于一电子设备内。
上文在图1C-1H中所示的传统封装单分过程能够大批量地制作封装。然而，此传统的单分过程具有多个潜在的缺点。
一种这样的缺点是相对低的生产量。具体而言，锯透金属材料的过程需要相当谨慎，以确保容纳于所述封装内的半导电结构的连续的电气完整性。特别是，快速锯割金属可产生残余电荷，所述残余电荷可短接或以其它方式破坏谨慎制作于所述封装内的电气连接。因此，涉及金属锯割的传统封装单分过程的各步骤是在谨慎控制的条件下缓慢地实施，从而减少了整个封装单分过程的生产量。
因此，所属领域中需要具有用于制作半导体装置封装的改良技术。
发明内容
通过掩模图案化及化学曝露与物理锯割相结合来实现对制作成一共用基质一部分的各个电子封装的单分。在一种根据本发明的单分方法的一实施例中，在所述基质的封装间部分内锯出一初始的浅锯口便会使下面的金属经受后续的化学蚀刻步骤。在一替代实施例中，可在所述基质上对一单独的光阻剂掩模进行图案化以有选择地使封装间区域中的金属经受化学蚀刻。
一种根据本发明的封装单分方法的一实施例包括：图案化一掩模以曝露出一共同制成的封装基质的封装间区域，通过化学曝露来移除所述封装间区域中的金属，并随后通过物理锯割来移除所述封装间区域中的剩余材料。
本发明的这些及其它实施例以及其特征及一些潜在的优点将结合下面的正文及附图更详尽地加以阐述。
附图说明
图1A显示传统QFN封装的底侧平面图。
图1B显示图1A所示封装沿线B-B′截取的剖面图。
图1C显示封装基质在单分前的简化平面图。
图1D显示沿图1C所示的线1D-1D′截取的简化剖面图。
图1E-H显示沿图1C所示的线1E-1E′截取的简化剖面图，其图解说明传统封装单分方法的各个连续阶段。
图2A-C显示沿图1C所示的线1E-1E′的简化剖面图，其图解说明根据本发明的封装单分方法的一个实施例的各连续阶段。
图3A显示传统封装的替代形式的简化剖面图。
图3B-3E显示简化的剖面图，其图解说明根据本发明用于单分图3A所示封装的方法的实施例的各连续阶段。
图4A-F显示简化的剖面图，其图解说明根据本发明的封装单分方法的替代实施例的各连续阶段。
具体实施方式
通过与掩膜的化学曝露及图案化相结合地进行物理锯割来实现对制作成一较大基质的一部分的各个电子封装的单分。在根据本发明的单分方法的一个实施例中，在所述基质的封装间部分内锯出一初始的浅锯口便会使下面的金属经受后续的化学蚀刻步骤。在根据本发明的单分方法的替代实施例中，可在所述基质上对一单独的光阻剂掩模进行图案化以有选择地使封装间区域中的金属经受化学蚀刻。
出于各种目的以引用方式并入本文中的第10/751,265号美国非临时专利申请案阐述了使用电镀技术来形成封闭形体。根据本发明的单分方法的各实施例可用于制作在该专利申请案中所述的封装。
下面参照图1A-B中所示的已完工的传统封装基质来对根据本发明的封装单分方法的各实施例进行说明。图2A显示在一种根据本发明的单分方法的一实施例的一初始步骤后沿图1C所示封装基质的线E-E′截取的简化剖面图。
在图2A中，已制作了一初始的浅锯口260来仅移除位于各毗邻封装之间的Ni-Pd-Au堆叠105。此初始锯割步骤指定停止于下面的铜上，其结果可移除下面的铜的一小部分。此锯割步骤的宽度大于所述系杆，以便在此步骤期间也可物理性移除毗邻的模件。
图2B显示一在一种根据本发明的单分方法的一实施例的第二步骤后，沿图1C所示封装基质的线1E-E′截取的简化剖面图。在图2B中，使所述基质曝露至一种对Ni-Pd-Au堆叠上面的铜合金材料具有选择性的湿化学蚀刻剂。作为此种化学曝露的结果，通过蚀刻来移除通过图2A所示初始锯割步骤所曝露出的铜，以终止于所述铜下面的Ni-Pd-Au堆叠的Ni上。
存在多种用于根据本发明单分方法的各实施例来有选择地蚀刻铜材料的可能的蚀刻系统。一种这样的蚀刻方法涉及到将一水溶液中的钠、钾或过硫酸铵与催化剂(例如硫酸)相混合。当过硫酸盐溶解于水中时，所形成的过硫酸盐离子使铜氧化成铜离子。涉及过硫酸铵的此种化学反应显示于下列经简化的化学反应式中：
Cu+(NH4)252O8→CuSO4+(NH4)S204
一种用于有选择地移除铜的替代系统涉及到实施硫过氧化物蚀刻。具体而言，硫酸及过氧化氢与磷酸的混合物也可如在下列经简化的化学反应式中所示用作选择性的Cu蚀刻剂：
Cu+H2O2+H2SO4→Cu2SO4+2H2O
以图2B中所示的方式，通过化学反应而不是机械锯割来移除大部分的封装间铜材料，从而避免对所述封装内的有源装置造成电损伤的风险。此种蚀刻的具体位置是由前面简短的锯割步骤的浅锯口界定，而此实质上是由剩余的Ni-Pd-Au堆叠及未锯割的模件形成一掩模。
图2C显示一在所述单分方法的一最后步骤后沿图1C所示封装基质的线1E-E′截取的简化剖面图，其中重新进行机械锯割来移除下部的Ni-Pd-Au堆叠105及下面的塑料模件109，从而使各个封装完全单分。由于Ni-Pd-Au堆叠105的相对厚度，此种重新进行的锯割步骤相对简短而不会过分降低所述封装单分方法的生产量。
图2A-C中所示的过程仅代表一根据本发明的特定实例，且此方法的各变化形式仍归属于本发明范围内。例如，图2C中所描绘的最终锯割步骤实际上可分两个单独的步骤来进行。
在一第一步骤中，所述锯割重新进行的时间长度仅足以移除Ni-Pd-Au堆叠105。然后，可暂停所述锯割，以允许对此时相互电隔离的呈条带形式的各封装进行并行测试。在此种测试后，可对剩余的模制塑料重新进行锯割以实现对所述封装的完全单分。
此外，虽然图2C中所示的具体实施例是阐述通过锯割来移除封装间区域中所剩余的底层Ni-Pd-Au薄膜堆叠，但此也并非为本发明所必需的。根据一替代实施例，可通过引入封装间区域中的化学蚀刻剂来移除剩余的Ni-Pd-Au薄膜。在此种替代实施例中，在该步骤中可由一层光阻剂来保护所述封装基质上表面上剩余的Ni-Pd-Au薄膜堆叠免受蚀刻，所述光阻剂层是在所述初始锯割步骤前形成于所述基质的整个表面上并随后通过所述初始锯割步骤自封装间区域中以物理方式移除。
而且，虽然图2A-C中所示具体实施例阐述对制作于两面均带有电镀Ni-Pd-Au堆叠105的Cu合金引线框架上的封装进行单分，但此并非为本发明所必需的。根据各替代实施例，也可实现对使用其它材料制成的封装的单分。
例如，图3A显示一制作于一较大基质内的封装的简化剖面图。此视图与图1B中所示的视图相似。
图3A所示的封装300的外露引线304b及电路小片焊垫304a带有镀敷的焊料305而不是Ni-Pd-Au薄膜堆叠。图3A所示封装的Cu合金引线及电路小片焊垫的非外露表面带有在所选位置上经过专门图案化的镀银薄膜307。
图3B显示一沿封装间区域截取的图3A中所示类型的封装基质的简化剖面图。此视图与图1E中所示视图相似。
图3C显示一替代封装单分过程中的第一步骤，其中一初始的浅锯口360移除封装间区域中的焊料，从而暴露出系杆398的底层Cu合金。
将未受所述初始锯口影响的基质部分用作掩模，图3D显示所述单分过程中的连续步骤的简化剖面图，其中所述系杆的外露的Cu合金通过化学蚀刻移除。在所述单分过程中的此时，在各毗邻的封装之间不存在剩余电触点，且其因此可供用于条带测试。
图3E显示所述单分方法中的最终步骤的简化剖面图，其中在封装间区域中专门对剩余的模制塑料材料重新进行锯割以完成单分。
图3A-E中所示实施例是具体针对对在囊封后在外露金属部分上镀敷有焊料而不是依赖于预镀金属堆叠的封装进行单分。此可因Pd材料的可得性有限及成本较高而得到推动。
然而，由于使用预先电镀有Ni-Pd-Au的引线框架的实施例不需要额外的焊料镀敷步骤，因此图3A-E的实施例通常不太可取。另外，通过避免使用含铅焊料，利用预镀Ni-Pd-Au引线框架的封装制作方法使与危险的废料处理相关联的毒性减小且成本降低。
在至此所示及所述的具体实施例中，移除表面Ni-Pd-Au薄膜堆叠的初始的浅锯割步骤用来由未被所述初始锯割在实体上移除的剩余Ni-Pd-Au及塑料模件材料产生一掩模。然而，根据本发明的各替代实施例，可有意地对一单独的掩模层进行图案化以为封装单分界定封装间区域。
图4A-F显示一种根据本发明的封装单分方法的一替代实施例的简化剖面图。再一次参照图1C及1E中所示的制作好的封装基质来为所述方法提供一起始点。在图4A所示的剖面图中，一负性光阻剂层480旋涂于所述封装基质上。
在图4B所示的简化剖面图中，通过有选择地曝露至入射辐射并随后进行显影来将光阻剂480图案化成一掩模482。作为此图案化过程的结果，封装间区域484通过掩模482显露出。
在图4C所示的简化剖面图中，使带有得到显影的光阻剂掩模的基质曝露至一相对于系杆498及得到显影的光阻剂480的底层Cu合金对Ni-Pd-Au堆叠405具有选择性的化学蚀刻剂。
在图4D所示的简化剖面图中，使带有得到显影的光阻剂的经部分蚀刻的基质曝露至一相对于底层Ni-Pd-Au堆叠405及得到显影的光阻剂480对系杆498的Cu合金具有选择性的不同的化学蚀刻剂。
在图4E所示的简化剖面图中，使带有得到显影的光阻剂480的经进一步蚀刻的基质重新曝露至图4C所示的原始化学蚀刻剂，从而移除各封装之间的剩余金属触点。封装400此时适于接受条带测试。
图4F显示通过锯割在各毗邻封装400之间剩余的塑料模件409来完成所述单分方法。由于图4F所示的物理锯割步骤为所述过程中的唯一物理锯割步骤，因此避免了因金属锯割步骤所致的低效率及相应减少的生产量。
可在物理锯割来移除封装之间剩余的材料之前或之后移除在结合图4A-F所示工艺流程中得到图案化的光阻剂材料。可利用多种技术来实现移除所述光阻剂的步骤。在一较佳方法中，可通过曝露至湿有机清洁剂来剥除所显影的光阻剂。不甚佳地，可通过曝露至等离子体蚀刻来移除所显影的光阻剂，但此可能会对一些引脚造成静电放电损伤。
虽然图4A-F所示的具体实施例利用光阻剂显影来界定用于蚀刻封装间区域中Ni-Pd-Au堆叠的初始掩模，但此并非为本发明所必需的。根据各替代实施例，可通过一以类似于图2A及3C中所示的方式对所述光阻剂进行初始的浅锯割的步骤来形成所述光阻剂的初始图案，其中移除所述系杆的金属材料的大部分仍通过蚀刻而不是低效率锯割方法来实现。
虽然上文是对具体实施例的详尽说明，但也可使用各种修改形式、替代构造及等效物。因此，上述说明及例示不应视为对由随附权利要求书所界定的本发明范围的限制。

Claims (18)

1、一种封装单分(singulation)方法，其包括：
对掩模进行图案化以曝露出共同制成的封装基质的封装间区域；
通过化学曝露来移除所述封装间区域中的金属；并随后
通过物理锯割来移除所述封装间区域中的剩余材料。
2、如权利要求1所述的方法，其中对所述掩模进行图案化包括在所述封装间区域中进行初始锯割以曝露出所述金属。
3、如权利要求2所述的方法，其中所述曝露出的金属包含铜。
4、如权利要求3所述的方法，其中通过曝露至选自由下列组成的群组的化学蚀刻剂来移除所述金属：由过硫酸盐离子与催化剂形成的水溶液，以及由硫酸及过氧化氢与磷酸形成的混合物。
5、如权利要求2所述的方法，其中所述掩模包括塑料模件及第二金属。
6、如权利要求5所述的方法，其中所述第二金属选自由焊料与Ni-Pd-Au薄膜堆叠组成的群组。
7、如权利要求5所述的方法，其中所述剩余材料包括塑料模件。
8、如权利要求7所述的方法，其进一步包括在锯割所述剩余材料前对所述封装进行条带测试。
9、如权利要求7所述的方法，其中所述剩余材料进一步包括一覆盖所述塑料模件的第二金属，所述第二金属选自由银与Ni-Pd-Au薄膜堆叠组成的群组。
10、如权利要求9所述的方法，其进一步包括在锯割所述第二金属后并在锯割所述塑料模件前对所述封装进行条带测试。
11、如权利要求2所述的方法，其进一步包括在所述初始锯割步骤前在所述基质上形成一层光阻剂。
12、如权利要求11所述的方法，其中所述剩余材料进一步包括覆盖塑料模件的第二金属，所述方法进一步包括在锯割所述塑料模件前对所述封装间区域内的所述第二金属进行化学蚀刻。
13、如权利要求1所述的方法，其中对所述掩模进行图案化包括使一层光阻剂曝光并显影。
14、如权利要求13所述的方法，其中移除所述金属包括将表面金属曝露至第一化学蚀刻剂、并随后将底层金属曝露至第二化学蚀刻剂。
15、如权利要求14所述的方法，其中：
所述底层金属包含铜；及
所述第二化学蚀刻剂选自由下列组成的群组：由过硫酸盐离子与催化剂形成的水溶液，以及由硫酸及过氧化氢与磷酸形成的混合物。
16、如权利要求14所述的方法，其中所述表面金属选自由焊料与Ni-Pd-Au薄膜堆叠组成的群组。
17、如权利要求13所述的方法，其进一步包括移除所述经显影及曝光的光阻剂。
18、如权利要求17所述的方法，其中通过曝露至湿有机清洁剂来移除所述光阻剂。
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WO2005112102A3 (en) 2007-12-06
JP2008509541A (ja) 2008-03-27

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