US7382447B2
(en)
*
|
2001-06-26 |
2008-06-03 |
Kla-Tencor Technologies Corporation |
Method for determining lithographic focus and exposure
|
KR101056142B1
(ko)
*
|
2004-01-29 |
2011-08-10 |
케이엘에이-텐코 코포레이션 |
레티클 설계 데이터의 결함을 검출하기 위한 컴퓨터로구현되는 방법
|
US9188974B1
(en)
|
2004-02-13 |
2015-11-17 |
Kla-Tencor Technologies Corp. |
Methods for improved monitor and control of lithography processes
|
JP4904034B2
(ja)
|
2004-09-14 |
2012-03-28 |
ケーエルエー−テンカー コーポレイション |
レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
|
US7769225B2
(en)
*
|
2005-08-02 |
2010-08-03 |
Kla-Tencor Technologies Corp. |
Methods and systems for detecting defects in a reticle design pattern
|
EP1920369A2
(en)
*
|
2005-08-08 |
2008-05-14 |
Brion Technologies, Inc. |
System and method for creating a focus-exposure model of a lithography process
|
JP4954211B2
(ja)
*
|
2005-09-09 |
2012-06-13 |
エーエスエムエル ネザーランズ ビー.ブイ. |
個別マスクエラーモデルを使用するマスク検証を行うシステムおよび方法
|
US7962868B2
(en)
*
|
2005-10-28 |
2011-06-14 |
Freescale Semiconductor, Inc. |
Method for forming a semiconductor device using optical proximity correction for the optical lithography
|
US7676077B2
(en)
|
2005-11-18 |
2010-03-09 |
Kla-Tencor Technologies Corp. |
Methods and systems for utilizing design data in combination with inspection data
|
US7570796B2
(en)
*
|
2005-11-18 |
2009-08-04 |
Kla-Tencor Technologies Corp. |
Methods and systems for utilizing design data in combination with inspection data
|
US8041103B2
(en)
*
|
2005-11-18 |
2011-10-18 |
Kla-Tencor Technologies Corp. |
Methods and systems for determining a position of inspection data in design data space
|
EP1804119A1
(en)
*
|
2005-12-27 |
2007-07-04 |
Interuniversitair Microelektronica Centrum |
Method for manufacturing attenuated phase- shift masks and devices obtained therefrom
|
US7493589B2
(en)
|
2005-12-29 |
2009-02-17 |
Asml Masktools B.V. |
Method, program product and apparatus for model based geometry decomposition for use in a multiple exposure process
|
US7694267B1
(en)
|
2006-02-03 |
2010-04-06 |
Brion Technologies, Inc. |
Method for process window optimized optical proximity correction
|
WO2008020265A1
(en)
*
|
2006-08-16 |
2008-02-21 |
Koninklijke Philips Electronics N.V. |
Method and apparatus for designing an integrated circuit
|
US7642020B2
(en)
*
|
2006-08-17 |
2010-01-05 |
International Business Machines Corporation |
Method for separating optical and resist effects in process models
|
US7900165B2
(en)
*
|
2007-03-30 |
2011-03-01 |
Synopsys, Inc. |
Determining a design attribute by estimation and by calibration of estimated value
|
US7716627B1
(en)
*
|
2006-09-28 |
2010-05-11 |
Guada, Inc. |
Solution-dependent regularization method for quantizing continuous-tone lithography masks
|
US7877722B2
(en)
*
|
2006-12-19 |
2011-01-25 |
Kla-Tencor Corp. |
Systems and methods for creating inspection recipes
|
WO2008086282A2
(en)
*
|
2007-01-05 |
2008-07-17 |
Kla-Tencor Corporation |
Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
|
KR101591100B1
(ko)
*
|
2007-01-18 |
2016-02-02 |
가부시키가이샤 니콘 |
스캐너 기반의 광 근접 보정 시스템 및 이용 방법
|
US20080180696A1
(en)
*
|
2007-01-30 |
2008-07-31 |
Sony Corporation |
Process window for EUV lithography
|
JP4328811B2
(ja)
|
2007-02-27 |
2009-09-09 |
キヤノン株式会社 |
レジストパターン形状予測方法、プログラム及びコンピュータ
|
US7962863B2
(en)
|
2007-05-07 |
2011-06-14 |
Kla-Tencor Corp. |
Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer
|
US7738093B2
(en)
|
2007-05-07 |
2010-06-15 |
Kla-Tencor Corp. |
Methods for detecting and classifying defects on a reticle
|
US8213704B2
(en)
*
|
2007-05-09 |
2012-07-03 |
Kla-Tencor Corp. |
Methods and systems for detecting defects in a reticle design pattern
|
US7913196B2
(en)
*
|
2007-05-23 |
2011-03-22 |
United Microelectronics Corp. |
Method of verifying a layout pattern
|
US8001492B2
(en)
*
|
2007-06-28 |
2011-08-16 |
Linden Design Technologies, Inc. |
Evaluation method for interconnects interacted with integrated-circuit manufacture
|
US7796804B2
(en)
*
|
2007-07-20 |
2010-09-14 |
Kla-Tencor Corp. |
Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
|
US7711514B2
(en)
*
|
2007-08-10 |
2010-05-04 |
Kla-Tencor Technologies Corp. |
Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
|
KR101448971B1
(ko)
*
|
2007-08-20 |
2014-10-13 |
케이엘에이-텐코어 코오포레이션 |
실제 결함들이 잠재적으로 조직적인 결함들인지 또는 잠재적으로 랜덤인 결함들인지를 결정하기 위한 컴퓨터-구현 방법들
|
US7999920B2
(en)
*
|
2007-08-22 |
2011-08-16 |
Asml Netherlands B.V. |
Method of performing model-based scanner tuning
|
US7707539B2
(en)
*
|
2007-09-28 |
2010-04-27 |
Synopsys, Inc. |
Facilitating process model accuracy by modeling mask corner rounding effects
|
US7805699B2
(en)
*
|
2007-10-11 |
2010-09-28 |
Mentor Graphics Corporation |
Shape-based photolithographic model calibration
|
NL1036189A1
(nl)
*
|
2007-12-05 |
2009-06-08 |
Brion Tech Inc |
Methods and System for Lithography Process Window Simulation.
|
JP4568341B2
(ja)
*
|
2008-03-19 |
2010-10-27 |
株式会社東芝 |
シミュレーションモデル作成方法、マスクデータ作成方法、及び半導体装置の製造方法
|
JP2009231767A
(ja)
*
|
2008-03-25 |
2009-10-08 |
Toshiba Corp |
リソグラフィープロセスウィンドー解析方法およびその解析プログラム
|
DE102008015806B4
(de)
*
|
2008-03-27 |
2015-07-16 |
Infineon Technologies Ag |
Verfahren zum Kalibrieren eines Simulations- oder Entwurfsverfahrens, zum Entwerfen oder Herstellen einer Maske oder zum Herstellen eines Bauelements
|
US8139844B2
(en)
*
|
2008-04-14 |
2012-03-20 |
Kla-Tencor Corp. |
Methods and systems for determining a defect criticality index for defects on wafers
|
US7974819B2
(en)
*
|
2008-05-13 |
2011-07-05 |
Aptina Imaging Corporation |
Methods and systems for intensity modeling including polarization
|
KR101504504B1
(ko)
*
|
2008-05-21 |
2015-03-20 |
케이엘에이-텐코어 코오포레이션 |
툴 및 프로세스 효과들을 분리하기 위한 기판 매트릭스
|
US8015513B2
(en)
*
|
2008-05-30 |
2011-09-06 |
Texas Instruments Incorporated |
OPC models generated from 2D high frequency test patterns
|
KR101928938B1
(ko)
|
2008-06-03 |
2018-12-13 |
에이에스엠엘 네델란즈 비.브이. |
모델-기반 공정 시뮬레이션 시스템들 및 방법들
|
JP2009302206A
(ja)
*
|
2008-06-11 |
2009-12-24 |
Canon Inc |
露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
|
WO2010005957A1
(en)
|
2008-07-07 |
2010-01-14 |
Brion Technologies, Inc. |
Illumination optimization
|
US7966583B2
(en)
*
|
2008-07-08 |
2011-06-21 |
Synopsys, Inc. |
Method and apparatus for determining the effect of process variations
|
KR101623747B1
(ko)
|
2008-07-28 |
2016-05-26 |
케이엘에이-텐코어 코오포레이션 |
웨이퍼 상의 메모리 디바이스 영역에서 검출된 결함들을 분류하기 위한 컴퓨터-구현 방법들, 컴퓨터-판독 가능 매체, 및 시스템들
|
NL2003654A
(en)
|
2008-11-06 |
2010-05-10 |
Brion Tech Inc |
Methods and system for lithography calibration.
|
NL2003702A
(en)
*
|
2008-11-10 |
2010-05-11 |
Brion Tech Inc |
Pattern selection for lithographic model calibration.
|
NL2003719A
(en)
*
|
2008-11-10 |
2010-05-11 |
Brion Tech Inc |
Delta tcc for fast sensitivity model computation.
|
KR100990880B1
(ko)
|
2008-11-12 |
2010-11-01 |
주식회사 동부하이텍 |
핫 스팟 라이브러리 생성 방법
|
US8516401B2
(en)
*
|
2008-11-19 |
2013-08-20 |
Mentor Graphics Corporation |
Mask model calibration technologies involving etch effect and exposure effect
|
US8136054B2
(en)
*
|
2009-01-29 |
2012-03-13 |
Synopsys, Inc. |
Compact abbe's kernel generation using principal component analysis
|
US8775101B2
(en)
|
2009-02-13 |
2014-07-08 |
Kla-Tencor Corp. |
Detecting defects on a wafer
|
US8204297B1
(en)
|
2009-02-27 |
2012-06-19 |
Kla-Tencor Corp. |
Methods and systems for classifying defects detected on a reticle
|
US8112241B2
(en)
*
|
2009-03-13 |
2012-02-07 |
Kla-Tencor Corp. |
Methods and systems for generating an inspection process for a wafer
|
US8196068B2
(en)
*
|
2009-04-30 |
2012-06-05 |
Synopsys, Inc. |
Modeling critical-dimension (CD) scanning-electron-microscopy (CD-SEM) CD extraction
|
US8255838B2
(en)
*
|
2010-01-15 |
2012-08-28 |
Synopsys, Inc. |
Etch-aware OPC model calibration by using an etch bias filter
|
US8607168B2
(en)
*
|
2010-02-16 |
2013-12-10 |
Mentor Graphics Corporation |
Contour alignment for model calibration
|
US9620426B2
(en)
*
|
2010-02-18 |
2017-04-11 |
Kla-Tencor Corporation |
Method and system for providing process tool correctables using an optimized sampling scheme with smart interpolation
|
US8276102B2
(en)
*
|
2010-03-05 |
2012-09-25 |
International Business Machines Corporation |
Spatial correlation-based estimation of yield of integrated circuits
|
US8285030B2
(en)
*
|
2010-03-15 |
2012-10-09 |
Synopsys, Inc. |
Determining calibration parameters for a lithographic process
|
US8234601B2
(en)
*
|
2010-05-14 |
2012-07-31 |
International Business Machines Corporation |
Test pattern for contour calibration in OPC model build
|
US8781781B2
(en)
|
2010-07-30 |
2014-07-15 |
Kla-Tencor Corp. |
Dynamic care areas
|
NL2007577A
(en)
|
2010-11-10 |
2012-05-14 |
Asml Netherlands Bv |
Optimization of source, mask and projection optics.
|
US8619236B2
(en)
|
2010-11-24 |
2013-12-31 |
International Business Machines Corporation |
Determining lithographic set point using optical proximity correction verification simulation
|
US9588439B1
(en)
*
|
2010-12-21 |
2017-03-07 |
Asml Netherlands B.V. |
Information matrix creation and calibration test pattern selection based on computational lithography model parameters
|
US8577489B2
(en)
|
2011-01-26 |
2013-11-05 |
International Business Machines Corporation |
Diagnosing in-line critical dimension control adjustments using optical proximity correction verification
|
US8499260B2
(en)
|
2011-01-26 |
2013-07-30 |
International Business Machines Corporation |
Optical proximity correction verification accounting for mask deviations
|
NL2008041A
(en)
*
|
2011-01-28 |
2012-07-31 |
Asml Netherlands Bv |
Lithographic apparatus and methods for determining an improved configuration of a lithographic apparatus.
|
KR20120090362A
(ko)
*
|
2011-02-07 |
2012-08-17 |
삼성전자주식회사 |
마스크 레이아웃 보정 방법 및 장치
|
US8443309B2
(en)
*
|
2011-03-04 |
2013-05-14 |
International Business Machines Corporation |
Multifeature test pattern for optical proximity correction model verification
|
US9170211B2
(en)
|
2011-03-25 |
2015-10-27 |
Kla-Tencor Corp. |
Design-based inspection using repeating structures
|
JP2013004672A
(ja)
*
|
2011-06-15 |
2013-01-07 |
Toshiba Corp |
シミュレーションモデル作成方法
|
US8572518B2
(en)
*
|
2011-06-23 |
2013-10-29 |
Nikon Precision Inc. |
Predicting pattern critical dimensions in a lithographic exposure process
|
NL2008957A
(en)
|
2011-07-08 |
2013-01-09 |
Asml Netherlands Bv |
Methods and systems for pattern design with tailored response to wavefront aberration.
|
US9087367B2
(en)
|
2011-09-13 |
2015-07-21 |
Kla-Tencor Corp. |
Determining design coordinates for wafer defects
|
US8468471B2
(en)
*
|
2011-09-23 |
2013-06-18 |
Kla-Tencor Corp. |
Process aware metrology
|
JP5988569B2
(ja)
*
|
2011-12-07 |
2016-09-07 |
キヤノン株式会社 |
決定方法、決定装置およびプログラム
|
US8831334B2
(en)
|
2012-01-20 |
2014-09-09 |
Kla-Tencor Corp. |
Segmentation for wafer inspection
|
US8464193B1
(en)
|
2012-05-18 |
2013-06-11 |
International Business Machines Corporation |
Optical proximity correction (OPC) methodology employing multiple OPC programs
|
US8826200B2
(en)
|
2012-05-25 |
2014-09-02 |
Kla-Tencor Corp. |
Alteration for wafer inspection
|
CN103472672B
(zh)
*
|
2012-06-06 |
2016-01-06 |
中芯国际集成电路制造(上海)有限公司 |
校正光学邻近校正模型的方法
|
US9424372B1
(en)
*
|
2012-06-11 |
2016-08-23 |
D2S, Inc. |
System and method for data path handling, shot count minimization, and proximity effects correction related to mask writing process
|
US8631359B1
(en)
*
|
2012-08-07 |
2014-01-14 |
Synopsys, Inc. |
System and technique for modeling resist profile change sensitivity at different heights
|
JP5917337B2
(ja)
|
2012-08-24 |
2016-05-11 |
株式会社東芝 |
パターンデータ作成方法
|
US9291920B2
(en)
|
2012-09-06 |
2016-03-22 |
Kla-Tencor Corporation |
Focus recipe determination for a lithographic scanner
|
US8739076B2
(en)
*
|
2012-09-11 |
2014-05-27 |
Synopsys, Inc. |
Method and apparatus for process window modeling
|
US9189844B2
(en)
|
2012-10-15 |
2015-11-17 |
Kla-Tencor Corp. |
Detecting defects on a wafer using defect-specific information
|
US9404743B2
(en)
|
2012-11-01 |
2016-08-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method for validating measurement data
|
US10769320B2
(en)
|
2012-12-18 |
2020-09-08 |
Kla-Tencor Corporation |
Integrated use of model-based metrology and a process model
|
US8741511B1
(en)
|
2012-12-19 |
2014-06-03 |
Globalfoundries Singapore Pte. Ltd. |
Determination of lithography tool process condition
|
US9053527B2
(en)
|
2013-01-02 |
2015-06-09 |
Kla-Tencor Corp. |
Detecting defects on a wafer
|
US9134254B2
(en)
|
2013-01-07 |
2015-09-15 |
Kla-Tencor Corp. |
Determining a position of inspection system output in design data space
|
US9311698B2
(en)
|
2013-01-09 |
2016-04-12 |
Kla-Tencor Corp. |
Detecting defects on a wafer using template image matching
|
WO2014149197A1
(en)
|
2013-02-01 |
2014-09-25 |
Kla-Tencor Corporation |
Detecting defects on a wafer using defect-specific and multi-channel information
|
US10274839B2
(en)
*
|
2013-03-11 |
2019-04-30 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Two-dimensional marks
|
US8782572B1
(en)
|
2013-03-13 |
2014-07-15 |
United Microelectronics Corp. |
Method of optical proximity correction
|
US9317632B2
(en)
*
|
2013-03-14 |
2016-04-19 |
Coventor, Inc. |
System and method for modeling epitaxial growth in a 3-D virtual fabrication environment
|
US10242142B2
(en)
|
2013-03-14 |
2019-03-26 |
Coventor, Inc. |
Predictive 3-D virtual fabrication system and method
|
KR20150134373A
(ko)
|
2013-03-22 |
2015-12-01 |
에테하 취리히 |
레이저 어블레이션 셀
|
US9865512B2
(en)
|
2013-04-08 |
2018-01-09 |
Kla-Tencor Corp. |
Dynamic design attributes for wafer inspection
|
US9310320B2
(en)
|
2013-04-15 |
2016-04-12 |
Kla-Tencor Corp. |
Based sampling and binning for yield critical defects
|
US8910089B1
(en)
*
|
2013-06-19 |
2014-12-09 |
International Business Machines Corporation |
Printing process calibration and correction
|
US9383661B2
(en)
*
|
2013-08-10 |
2016-07-05 |
Kla-Tencor Corporation |
Methods and apparatus for determining focus
|
US9070622B2
(en)
*
|
2013-09-13 |
2015-06-30 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Systems and methods for similarity-based semiconductor process control
|
WO2016012316A1
(en)
*
|
2014-07-21 |
2016-01-28 |
Asml Netherlands B.V. |
Method for determining a process window for a lithographic process, associated apparatuses and a computer program
|
KR102238708B1
(ko)
|
2014-08-19 |
2021-04-12 |
삼성전자주식회사 |
리소그래피 공정의 초점 이동 체크 방법 및 이를 이용한 전사 패턴 오류 분석 방법
|
KR102021450B1
(ko)
|
2014-09-22 |
2019-11-04 |
에이에스엠엘 네델란즈 비.브이. |
공정 윈도우 식별자
|
WO2016202559A1
(en)
|
2015-06-16 |
2016-12-22 |
Asml Netherlands B.V. |
Process window tracking
|
US9910348B2
(en)
|
2015-06-30 |
2018-03-06 |
Globalfoundries Inc. |
Method of simultaneous lithography and etch correction flow
|
US10699971B2
(en)
*
|
2015-08-17 |
2020-06-30 |
Qoniac Gmbh |
Method for processing of a further layer on a semiconductor wafer
|
US10008422B2
(en)
*
|
2015-08-17 |
2018-06-26 |
Qoniac Gmbh |
Method for assessing the usability of an exposed and developed semiconductor wafer
|
US9875534B2
(en)
|
2015-09-04 |
2018-01-23 |
Kla-Tencor Corporation |
Techniques and systems for model-based critical dimension measurements
|
WO2017055086A1
(en)
*
|
2015-09-30 |
2017-04-06 |
Asml Netherlands B.V. |
Metrology method for process window definition
|
WO2017080729A1
(en)
*
|
2015-11-13 |
2017-05-18 |
Asml Netherlands B.V. |
Methods for identifying a process window boundary
|
WO2017108432A1
(en)
*
|
2015-12-22 |
2017-06-29 |
Asml Netherlands B.V. |
Apparatus and method for process-window characterization
|
US10762267B2
(en)
|
2016-05-30 |
2020-09-01 |
Coventor, Inc. |
System and method for electrical behavior modeling in a 3D virtual fabrication environment
|
US10197908B2
(en)
|
2016-06-21 |
2019-02-05 |
Lam Research Corporation |
Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
|
TWI631415B
(zh)
*
|
2016-07-01 |
2018-08-01 |
美商格羅方德半導體公司 |
同時微影及蝕刻校正流程之方法
|
CN106094423B
(zh)
*
|
2016-08-22 |
2019-11-22 |
上海华力微电子有限公司 |
一种光刻工艺优化方法
|
KR102450492B1
(ko)
*
|
2016-10-21 |
2022-09-30 |
에이에스엠엘 네델란즈 비.브이. |
패터닝 프로세스용 보정 결정 방법
|
KR102306558B1
(ko)
*
|
2016-12-28 |
2021-10-05 |
에이에스엠엘 네델란즈 비.브이. |
제조 공정 시 공정 모델들의 안내 및 검사 방법들
|
US11614690B2
(en)
|
2017-01-26 |
2023-03-28 |
Asml Netherlands B.V. |
Methods of tuning process models
|
US10599046B2
(en)
|
2017-06-02 |
2020-03-24 |
Samsung Electronics Co., Ltd. |
Method, a non-transitory computer-readable medium, and/or an apparatus for determining whether to order a mask structure
|
JP7097757B2
(ja)
|
2017-06-18 |
2022-07-08 |
コベンター・インコーポレーテッド |
仮想半導体デバイス製作環境におけるキーパラメータ識別、プロセスモデル較正、及び変動性解析のためのシステムと方法
|
KR102550350B1
(ko)
|
2017-09-08 |
2023-07-04 |
에이에스엠엘 네델란즈 비.브이. |
기계 학습 보조 광 근접 오차 보정을 위한 트레이닝 방법들
|
US11029610B2
(en)
*
|
2017-09-28 |
2021-06-08 |
Asml Netherlands B.V. |
Lithographic method
|
US11137690B2
(en)
|
2017-10-11 |
2021-10-05 |
Asml Netherlands B.V. |
Flows of optimization for patterning processes
|
WO2019115426A1
(en)
|
2017-12-13 |
2019-06-20 |
Asml Netherlands B.V. |
Prediction of out of specification physical items
|
CN111512237B
(zh)
|
2017-12-22 |
2023-01-24 |
Asml荷兰有限公司 |
基于缺陷概率的过程窗口
|
CN111492317B
(zh)
*
|
2017-12-22 |
2023-01-10 |
Asml荷兰有限公司 |
用于减少抗蚀剂模型预测误差的系统和方法
|
KR102446690B1
(ko)
|
2017-12-22 |
2022-09-23 |
에이에스엠엘 네델란즈 비.브이. |
광학 수차를 포함하는 패터닝 공정 개선
|
WO2019158682A1
(en)
|
2018-02-18 |
2019-08-22 |
Asml Netherlands B.V. |
Binarization method and freeform mask optimization flow
|
US11232249B2
(en)
|
2018-03-19 |
2022-01-25 |
Asml Netherlands B.V. |
Method for determining curvilinear patterns for patterning device
|
KR102481745B1
(ko)
*
|
2018-03-20 |
2022-12-29 |
에이에스엠엘 네델란즈 비.브이. |
레지스트 및 에칭 모델 캘리브레이션을 가속화하는 즉각적인 튜닝 방법
|
US10572697B2
(en)
*
|
2018-04-06 |
2020-02-25 |
Lam Research Corporation |
Method of etch model calibration using optical scatterometry
|
KR20200130870A
(ko)
|
2018-04-10 |
2020-11-20 |
램 리써치 코포레이션 |
피처들을 특징화하기 위한 머신 러닝의 광학 계측
|
US11624981B2
(en)
|
2018-04-10 |
2023-04-11 |
Lam Research Corporation |
Resist and etch modeling
|
CN116841129A
(zh)
|
2018-05-07 |
2023-10-03 |
Asml荷兰有限公司 |
用于确定与计算光刻掩模模型相关联的电磁场的方法
|
CN112236723B
(zh)
|
2018-06-04 |
2024-03-19 |
Asml荷兰有限公司 |
利用模型基础对准来改善边缘放置量测准确度
|
WO2019238372A1
(en)
*
|
2018-06-15 |
2019-12-19 |
Asml Netherlands B.V. |
Machine learning based inverse optical proximity correction and process model calibration
|
EP3588191A1
(en)
|
2018-06-29 |
2020-01-01 |
ASML Netherlands B.V. |
Tuning patterning apparatus based on optical characteristic
|
EP3594750A1
(en)
|
2018-07-10 |
2020-01-15 |
ASML Netherlands B.V. |
Hidden defect detection and epe estimation based on the extracted 3d information from e-beam images
|
WO2020011513A1
(en)
|
2018-07-12 |
2020-01-16 |
Asml Netherlands B.V. |
Utilize pattern recognition to improve sem contour measurement accuracy and stability automatically
|
KR20210033496A
(ko)
|
2018-08-15 |
2021-03-26 |
에이에스엠엘 네델란즈 비.브이. |
원시 이미지들로부터 고품질 평균 sem 이미지들의 자동 선택 시 기계 학습 활용
|
TWI794544B
(zh)
|
2018-10-09 |
2023-03-01 |
荷蘭商Asml荷蘭公司 |
用於高數值孔徑穿縫源光罩最佳化之方法
|
US20210349404A1
(en)
|
2018-10-19 |
2021-11-11 |
Asml Netherlands B.V. |
Method to create the ideal source spectra with source and mask optimization
|
US20210405539A1
(en)
|
2018-11-05 |
2021-12-30 |
Asml Holding N.V. |
A method to manufacture nano ridges in hard ceramic coatings
|
CN112969968A
(zh)
|
2018-11-08 |
2021-06-15 |
Asml荷兰有限公司 |
基于过程变化度的空间特性对不合格的预测
|
EP3657257A1
(en)
*
|
2018-11-26 |
2020-05-27 |
ASML Netherlands B.V. |
Method for of measuring a focus parameter relating to a structure formed using a lithographic process
|
KR102610060B1
(ko)
|
2018-11-30 |
2023-12-06 |
에이에스엠엘 네델란즈 비.브이. |
제조성에 기초한 패터닝 디바이스 패턴을 결정하기 위한 방법
|
EP3660744A1
(en)
|
2018-11-30 |
2020-06-03 |
ASML Netherlands B.V. |
Method for decreasing uncertainty in machine learning model predictions
|
JP7209835B2
(ja)
|
2018-11-30 |
2023-01-20 |
エーエスエムエル ネザーランズ ビー.ブイ. |
機械学習モデル予測における不確実性を減少させる方法
|
EP3663855A1
(en)
|
2018-12-04 |
2020-06-10 |
ASML Netherlands B.V. |
Sem fov fingerprint in stochastic epe and placement measurements in large fov sem devices
|
US11797748B2
(en)
|
2018-12-28 |
2023-10-24 |
Asml Netherlands B.V. |
Method for generating patterning device pattern at patch boundary
|
CN113260925A
(zh)
|
2018-12-31 |
2021-08-13 |
Asml荷兰有限公司 |
确定图案形成装置的光学特性的分量的子集
|
TWI738169B
(zh)
|
2019-01-29 |
2021-09-01 |
荷蘭商Asml荷蘭公司 |
用於為佈局圖案化程序判定訓練圖案之方法及相關的電腦程式產品
|
US10977405B2
(en)
|
2019-01-29 |
2021-04-13 |
Lam Research Corporation |
Fill process optimization using feature scale modeling
|
US11086230B2
(en)
|
2019-02-01 |
2021-08-10 |
Asml Netherlands B.V. |
Method and apparatus for source mask optimization configured to increase scanner throughput for a patterning process
|
CN113412453A
(zh)
|
2019-02-19 |
2021-09-17 |
Asml控股股份有限公司 |
激光粗加工:工程化突节顶部的粗糙度
|
CN113508339A
(zh)
|
2019-02-27 |
2021-10-15 |
Asml荷兰有限公司 |
用于模型校准的改进量规选择
|
WO2020177979A1
(en)
|
2019-03-03 |
2020-09-10 |
Asml Netherlands B.V. |
Method and apparatus for imaging using narrowed bandwidth
|
US11846889B2
(en)
|
2019-03-08 |
2023-12-19 |
Asml Netherlands B.V. |
Method and apparatus for diffraction pattern guided source mask optimization
|
US11815820B2
(en)
|
2019-03-21 |
2023-11-14 |
Asml Netherlands B.V. |
Training method for machine learning assisted optical proximity error correction
|
CN113678064B
(zh)
|
2019-04-09 |
2023-12-08 |
Asml荷兰有限公司 |
用于在设施位置之间调整预测模型的系统和方法
|
EP3742229A1
(en)
|
2019-05-21 |
2020-11-25 |
ASML Netherlands B.V. |
Systems and methods for adjusting prediction models between facility locations
|
EP3963404B1
(en)
|
2019-04-30 |
2023-01-25 |
ASML Netherlands B.V. |
Method and apparatus for photolithographic imaging
|
EP3734365A1
(en)
|
2019-04-30 |
2020-11-04 |
ASML Netherlands B.V. |
Method and apparatus for photolithographic imaging
|
CN114096917B
(zh)
|
2019-07-10 |
2024-04-16 |
Asml荷兰有限公司 |
用于减小模型预测不确定性的模型校准的预测数据选择
|
WO2021023602A1
(en)
|
2019-08-08 |
2021-02-11 |
Asml Netherlands B.V. |
Method and apparatus for photolithographic imaging
|
WO2021037484A1
(en)
|
2019-08-30 |
2021-03-04 |
Asml Netherlands B.V. |
Semiconductor device geometry method and system
|
EP3789923A1
(en)
|
2019-09-06 |
2021-03-10 |
ASML Netherlands B.V. |
Method for increasing certainty in parameterized model predictions
|
US20220335290A1
(en)
*
|
2019-09-06 |
2022-10-20 |
Asml Netherlands B.V. |
Method for increasing certainty in parameterized model predictions
|
CN114787713A
(zh)
|
2019-11-01 |
2022-07-22 |
Asml荷兰有限公司 |
用于模型基础对准的基于机器学习的图像产生
|
CN114746806A
(zh)
|
2019-11-19 |
2022-07-12 |
Asml控股股份有限公司 |
使用非均匀照射强度分布进行优化
|
WO2021110343A1
(en)
|
2019-12-02 |
2021-06-10 |
Cymer Inc. |
Method and system for enhancing target features of a pattern imaged onto a substrate
|
EP3848953A1
(en)
|
2020-01-07 |
2021-07-14 |
ASML Netherlands B.V. |
High brightness electron source
|
WO2021140020A2
(en)
|
2020-01-07 |
2021-07-15 |
Asml Netherlands B.V. |
High brightness low energy spread pulsed electron source
|
CN115087925A
(zh)
|
2020-02-12 |
2022-09-20 |
Asml荷兰有限公司 |
包括使用经训练机器学习模型的光学邻近效应校正的用于确定掩模图案的方法
|
CN115104068A
(zh)
|
2020-02-21 |
2022-09-23 |
Asml荷兰有限公司 |
用于以基于缺陷的过程窗口为基础的校准模拟过程的方法
|
EP3872567A1
(en)
|
2020-02-25 |
2021-09-01 |
ASML Netherlands B.V. |
Systems and methods for process metric aware process control
|
US20230107556A1
(en)
|
2020-03-03 |
2023-04-06 |
Asml Netherlands B.V. |
Machine learning based subresolution assist feature placement
|
TWI791216B
(zh)
|
2020-05-09 |
2023-02-01 |
荷蘭商Asml荷蘭公司 |
判定用於基板上之圖案的部分之度量
|
WO2021244830A1
(en)
|
2020-06-02 |
2021-12-09 |
Asml Netherlands B.V. |
Verifying freeform curvilinear features of a mask design
|
EP4162322A1
(en)
|
2020-06-03 |
2023-04-12 |
ASML Netherlands B.V. |
Systems, products, and methods for generating patterning devices and patterns therefor
|
JP2023529080A
(ja)
|
2020-06-10 |
2023-07-07 |
エーエスエムエル ネザーランズ ビー.ブイ. |
収差影響システム、モデル、及び製造プロセス
|
EP3951496A1
(en)
|
2020-08-07 |
2022-02-09 |
ASML Netherlands B.V. |
Apparatus and method for selecting informative patterns for training machine learning models
|
CN115917438A
(zh)
|
2020-08-19 |
2023-04-04 |
Asml荷兰有限公司 |
用于从原始图像自动选择高品质图像的设备和方法
|
CN115885216A
(zh)
|
2020-08-19 |
2023-03-31 |
Asml荷兰有限公司 |
用于基于图像的图案选择的系统、产品和方法
|
WO2022064016A1
(en)
|
2020-09-25 |
2022-03-31 |
Asml Netherlands B.V. |
Optimization of scanner throughput and imaging quality for a patterning process
|
WO2022069420A1
(en)
|
2020-09-30 |
2022-04-07 |
Asml Netherlands B.V. |
Vacuum system for mitigating damage due to a vacuum pump malfunction
|
WO2022083977A1
(en)
|
2020-10-23 |
2022-04-28 |
Asml Netherlands B.V. |
Method for generating mask pattern
|
US20240004305A1
(en)
|
2020-12-18 |
2024-01-04 |
Asml Netherlands B.V. |
Method for determining mask pattern and training machine learning model
|
CN116635785A
(zh)
|
2020-12-21 |
2023-08-22 |
Asml荷兰有限公司 |
用于图案区域的基于特征的单元提取
|
KR20230147096A
(ko)
|
2021-02-23 |
2023-10-20 |
에이에스엠엘 네델란즈 비.브이. |
타겟 패턴 및 기준 층 패턴을 사용하여 마스크에 대한 광 근접 보정을 결정하는 기계 학습 모델
|
WO2022189180A1
(en)
|
2021-03-08 |
2022-09-15 |
Asml Netherlands B.V. |
Method of pattern selection for a semiconductor manufacturing related process
|
WO2022263312A1
(en)
|
2021-06-18 |
2022-12-22 |
Asml Netherlands B.V. |
Computer-readable medium for generating assist features using machine learning model
|
WO2022268434A1
(en)
|
2021-06-23 |
2022-12-29 |
Asml Netherlands B.V. |
Etch simulation model including a correlation between etch biases and curvatures of contours
|
WO2023280511A1
(en)
|
2021-07-06 |
2023-01-12 |
Asml Netherlands B.V. |
Determining localized image prediction errors to improve a machine learning model in predicting an image
|
KR20240031314A
(ko)
|
2021-07-13 |
2024-03-07 |
에이에스엠엘 네델란즈 비.브이. |
소스 마스크 최적화 및 타겟 최적화를 위한 패턴 선택
|
KR20240035491A
(ko)
|
2021-07-21 |
2024-03-15 |
에이에스엠엘 네델란즈 비.브이. |
광학 컬럼의 열적으로 안정적인 장착을 위한 시스템 및 방법
|
KR20240036674A
(ko)
|
2021-07-30 |
2024-03-20 |
에이에스엠엘 네델란즈 비.브이. |
마스크 패턴을 생성하는 방법
|
KR20240044432A
(ko)
|
2021-08-10 |
2024-04-04 |
에이에스엠엘 네델란즈 비.브이. |
메트롤로지 마크 및 디바이스 패턴의 수차 민감도 매칭
|
WO2023030807A1
(en)
|
2021-09-02 |
2023-03-09 |
Asml Netherlands B.V. |
Method of evaluating selected set of patterns
|
WO2023046385A1
(en)
|
2021-09-22 |
2023-03-30 |
Asml Netherlands B.V. |
Pattern selection systems and methods
|
CN113985705B
(zh)
*
|
2021-10-18 |
2022-11-11 |
中国科学院微电子研究所 |
一种快速实现光刻系统精密校准的光学方法及装置
|
WO2023084063A1
(en)
|
2021-11-15 |
2023-05-19 |
Asml Netherlands B.V. |
Generating augmented data to train machine learning models to preserve physical trends
|
WO2023088649A1
(en)
|
2021-11-17 |
2023-05-25 |
Asml Netherlands B.V. |
Determining an etch effect based on an etch bias direction
|
WO2023088641A1
(en)
|
2021-11-19 |
2023-05-25 |
Asml Netherlands B.V. |
Simulation model stability determination method
|
WO2023110346A1
(en)
|
2021-12-14 |
2023-06-22 |
Asml Netherlands B.V. |
Methods, software, and systems for determination of constant-width sub-resolution assist features
|
WO2023110401A1
(en)
|
2021-12-14 |
2023-06-22 |
Asml Netherlands B.V. |
Thermal control systems, models, and manufacturing processes in lithography
|
WO2023131570A1
(en)
|
2022-01-05 |
2023-07-13 |
Asml Netherlands B.V. |
Software, methods, and systems for determination of a local focus point
|
WO2023169806A1
(en)
|
2022-03-09 |
2023-09-14 |
Asml Netherlands B.V. |
Methods, systems, and software for determination of failure rates of lithographic processes
|
WO2023180020A1
(en)
|
2022-03-22 |
2023-09-28 |
Asml Netherlands B.V. |
Lithographic pattern representation with curvilinear elements
|
WO2023222368A1
(en)
|
2022-05-17 |
2023-11-23 |
Asml Netherlands B.V. |
Diffraction-based pupil determination for optimization of lithographic processes
|
WO2024013038A1
(en)
|
2022-07-12 |
2024-01-18 |
Asml Netherlands B.V. |
Stochastic-aware source mask optimization based on edge placement probability distribution
|
WO2024017807A1
(en)
|
2022-07-19 |
2024-01-25 |
Asml Netherlands B.V. |
Systems and methods for optimizing metrology marks
|
WO2024037859A1
(en)
|
2022-08-15 |
2024-02-22 |
Asml Netherlands B.V. |
Method for radiation spectrum aware souce mask optimization for lithography
|
WO2024041831A1
(en)
|
2022-08-25 |
2024-02-29 |
Asml Netherlands B.V. |
Modelling of multi-level etch processes
|