CN101176212B - 波长转换的半导体发光器件 - Google Patents

波长转换的半导体发光器件 Download PDF

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Publication number
CN101176212B
CN101176212B CN2006800083173A CN200680008317A CN101176212B CN 101176212 B CN101176212 B CN 101176212B CN 2006800083173 A CN2006800083173 A CN 2006800083173A CN 200680008317 A CN200680008317 A CN 200680008317A CN 101176212 B CN101176212 B CN 101176212B
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phosphor
luminescent device
light
layer
type zone
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CN101176212A (zh
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M·R·克拉梅斯
G·O·米勒
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Lumileds LLC
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Philips Lumileds Lighing Co LLC
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    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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Abstract

一种诸如磷光体之类的材料与半导体结构光学耦合，该半导体结构包括设置在n-型区域和p-区域之间的发光区域，以便有效地将来自发光区域的光提取进入到磷光体中。该磷光体可以是与半导体结构的表面直接接触的磷光体晶粒，或者是与半导体结构结合的陶瓷磷光体，或者与其上可以生长半导体结构的薄的核结构结合的陶瓷磷光体。该磷光体优选是高吸收的且高效的。当半导体结构将光发射到这种高效、高吸收的磷光体中时，该磷光体可以有效地从该结构中提取光，降低现有技术器件中存在的光损耗。

Description

波长转换的半导体发光器件
技术领域
本发明涉及一种波长转换的半导体发光器件。
背景技术
包括发光二极管(LED)、共振腔发光二极管(RCLED)、垂直腔激光二极管(VCSEL)和边缘发射激光器的半导体发光器件是目前可以得到的最有效的光源。目前关注点集中于制造能够在整个可见光谱范围中工作的高亮度发光器件的材料体系包括III-V族半导体，特别是镓、铝、铟和氮的二价、三价和四价合金，也称作III-氮化物材料、以及镓、铝、铟和磷的二价、三价和四价合金，也称作III-磷化物材料。典型地，III-氮化物发光器件是通过金属-有机化学汽相沉积(MOCVD)、分子束外延、或者其他外延技术，在蓝宝石、碳化硅、III-氮化物或者其他合适的衬底上外延生长不同组分和掺杂浓度的半导体层的叠层而制造的。所述叠层通常包括形成在衬底上的掺杂有例如Si的一个或者多个n-型层、形成在n-型层或者多个n-型层上的发光或者活性区域、以及形成在活性区域上的掺杂有例如Mg的一个或者多个p-型层。形成在导电衬底上的III-氮化物器件可以在该器件的相对侧上形成有p-触点和n-触点。通常，在绝缘衬底(例如蓝宝石)上制造III-氮化物器件，在该器件的同一侧上具有两个触点。安装这种器件，使得光或者通过触点(作为向上外延器件而已知的)或者通过器件中与触点相对的表面(作为倒装芯片器件而已知的)而被提取。
图1说明了在美国专利US6,650,044中更加详细描述的III-氮化物倒装芯片器件的例子。LED 2包括第一导电类型的第一半导体层10和第二导电类型的第二半导体层12。半导体层10和12与活性区域14电连接。活性区域14是例如与层10和12的界面相关联的p-n结。可替换地，活性区域14包括一个或者多个掺杂或者未掺杂n-型或者p-型的半导体层。在半导体层10上设置任选的透明的添加覆盖层(superstrate)16。触点18和20分别与半导体层10和12电耦连。当经过触点18和20施加适当电压时，活性区域14发光。互连22和24分别将触点18和20电耦连到衬底触点26和28上。在一个实施方案中，半导体层10和12以及活性区域14由III-氮化物化合物例如AlxInyGazN化合物形成，活性区域14发射波长为例如大约470nm的蓝光。任选的透明添加覆盖层16例如由蓝宝石或者碳化硅形成。衬底4包括例如硅。参见美国专利US6,650,044第3栏第40-63行。
III-氮化物LED结构通常生长在蓝宝石衬底上，因为蓝宝石具有高温稳定性并且制造相对容易。使用蓝宝石衬底可能导致提取效率较差，因为在半导体层和衬底之间的界面处的折射率之差较大。当光入射在两种材料之间的界面上时，折射率之差决定了有多少光在那个界面处全内反射，以及有多少光透射过去。折射率之差越大，被反射的光就越多。蓝宝石的折射率(1.8)低于生长在蓝宝石上的III-氮化物器件层的折射率(2.4)。因此，当III-氮化物器件层中产生的光到达半导体层和蓝宝石衬底之间的界面时，大部分光被反射。被全内反射的光必定散射并且在其被提取之前形成许多通过器件的通道。这些通道导致光明显减弱，是因为触点位置上的光损失、自由载流子吸收和在III-氮化物器件层中的任一层内的带间吸收。使用折射率与III-氮化物材料的折射率更加接近地匹配的其他生长衬底可以降低光损失，但是通常不能完全消除光损失。同样地，因为III-氮化物材料和空气之间的折射率相差较大，所以除去生长衬底也不会消除光损失。
发明内容
根据本发明的实施方案，一种例如磷光体的材料光学地结合在半导体结构中，该半导体结构包括设置在n-型区域和p-区域之间的发光区域，以便有效地将来自发光区域中的光提取进入到磷光体中。该磷光体可以是与半导体结构的表面直接接触的磷光体颗粒，或者是结合到半导体结构的陶瓷磷光体，或者是与其上可以生长半导体结构的薄核结构(nucleation structure)结合的陶瓷磷光体。该磷光体优选是高吸收且高效的。当半导体结构将光发射到这种高效、高吸收的磷光体中时，磷光体可以有效地从该结构中提取光，降低现有器件中存在的光损耗。
附图说明
图1示出现有技术中的倒装芯片III-氮化物发光器件管。
图2示出根据本发明实施方案的磷光体-转换III-氮化物发光器件。
图3示出在生长衬底上生长的III-氮化物发光器件的外延层。
图4示出在结合到主衬底上的III-氮化物发光器件的外延层。
图5和6示出根据本发明实施方案的磷光体-转换III-氮化物发光器件。
图7，8和9示出制造图5和6中示出的器件的方法。
图10和11示出制造图5和6中示出的器件的可替换方法。
图12示出封装的发光器件的剖视图。
图13示出结合到封装部分上的图5的器件。
具体实施方式
图1中示出的现有技术的器件包括具有磷光体的层30。磷光体是能够吸收激发能(通常为辐射能)然后发射所吸收的能量为与初始激发能不同的能量的辐射的发光材料。最新(state-of-the-art)的磷光体具有接近100％的量子效率，这意味着被提供为激发能的几乎所有质子被磷光体重发射。最新磷光体还是高吸收性的。如果发光器件能够将光直接发射入这种高效率、高吸收的磷光体中，那么磷光体可以从器件有效地提取光，降低上述光损耗。
图1中示出的器件没有使用磷光体的这些性质。在图1中示出的器件中，衬底16使磷光体层30与III-氮化物器件区域10，12和14分隔开。如上所述，因为器件层和衬底之间界面处的折射率的阶跃(step)，许多光被捕获在半导体层中。
根据本发明的实施方案，将磷光体紧密地耦合到器件中的其中一个半导体层上，以促进光的有效提取。图2示出了本发明的第一实施方案，其中磷光体的晶粒沉积在器件在去除生长衬底时暴露出来的III-氮化物表面上。磷光体晶粒(grain)34沉积在n-型区域10的表面上。磷光体晶粒34与n-型区域10直接接触，使得活性区域14发射出来的光直接耦合到磷光体晶粒34上。可以提供光耦合介质32以保持磷光体晶粒34在适当位置上。选择光耦合介质32以具有比上述传统粘结剂的折射率高的折射率，例如高于1.5，并且尽可能接近而没有显著超过n-型区域10的折射率。为了更有效的运行，无损失的介质包括在n-型区域10、磷光体晶粒34和光耦合介质32之间。磷光体晶粒34通常具有在0.1到20微米之间的晶粒大小，更典型地具有在1到8微米之间的磷光体晶粒大小。
图2中示出的器件可以通过在传统生长衬底上生长器件层，将所述器件层结合到主衬底上，然后除去生长衬底而形成。图3示出在传统生长衬底16上生长的器件层。N-型区域10生长在衬底16的上方。N-型区域10可以包括任选预备层(preparation layer)(例如缓冲层或者成核层)，以及被设计成易于释放生长衬底或者在除去衬底之后使外延层变薄的任选释放层。活性区域14生长在n-型区域10的上方，接着是p-型区域12。在p-型区域12的上方沉积一个或者多个金属层50，该金属层50包括例如欧姆接触层、反射层、阻挡层、和结合层的。
然后将器件层通过金属层50中暴露的表面结合到主衬底28上，在图4中示出。一个或者多个结合层(未示出)，典型地是金属，可以用作用于外延结构和主衬底之间的热压或者共晶键合(eutecticbonding)的顺应材料(compliant material)。适当的结合层金属的例子包括金和银。在除去生长衬底之后主衬底38对外延层提供机械支撑，并且提供与p-型区域12的电连接。通常选择主衬底38是导电的(即，低于大约0.1Ωcm)、导热的、具有与外延层的热膨胀系数(CTE)相匹配的热膨胀系数、以及扁平得足以(即，具有低于大约10nm的均方根硬度)形成坚固的晶片结合(wafer bond)。适合的材料包括例如金属，诸如Cu、Mo、Cu/Mo和Cu/W；具有金属触点的半导体，诸如具有欧姆触点的Si和具有欧姆触点的GaAs，包括例如Pd、Ge、Ti、Au、Ni、Ag中的一种或者多种；以及陶瓷，诸如AlN；压缩的金刚石、或者通过化学汽相沉积生长的金刚石层。
器件层可以以晶片大小结合到主衬底38上，使得器件的整个晶片结合到一个晶片的主衬底上，然后在结合之后将单个器件切成方块。可替换地，可以将一个晶片大小的器件切成单个器件，然后以小切块(die)大小将每个器件结合到主衬底38上。
在升高的温度和压力下将主衬底38和外延层10，12和14压在一起，从而在主衬底38和金属层50之间的界面处形成耐久的结合，例如在界面处在金属结合层(未示出)之间形成耐久的金属结合。用于结合的温度和压力范围由得到的结合的强度限定在较低端，并且由主衬底结构、金属化和外延结构的稳定性限定在较高端。例如，高温和/或高压能够引起外延层的分解、金属触点的剥离、扩散阻挡层(diffusion barrier)的失效、或者外延层中组成材料的除气作用。适当的温度范围是例如大约200℃到大约500℃。适当的压力范围是例如大约100psi到大约300psi。
为了除去蓝宝石生长衬底，将衬底16和晶体区域10之间的界面的一些部分经过衬底以梯级且重复图案暴露给高能注量(highfluence)脉冲紫外激光器。为了免受于因暴露于激光所引起的冲击波的影响，可以通过蚀刻通过器件的晶体层的沟槽使暴露的部分可以免受影响。激光器的光子能量在与蓝宝石(一些实施方案中为GaN)相邻的晶体层的带隙以上，因此在与蓝宝石相邻的外延材料的第一个100nm之内，脉冲能有效地转换成热能。在足够的高能注量(即，大于大约1.5J/cm2)和在GaN的带隙以上且在蓝宝石的吸收边沿以下的光子能(即在大约3.44到大约6eV之间)，在第一个100nm之内的温度以十亿分之一秒的大小升高到大于1000℃的温度，对于GaN来说高到足以分离成镓和氮气，将外延层从衬底16上释放。得到的结构包括结合到主衬底38上的外延层10，12和14。可以使用适于特定生长衬底的任何去除技术。例如，在一些实施方案中，可以通过其他方式例如蚀刻、研磨或其组合来去除生长衬底，例如Si、SiC、基于Si的工程衬底、和GaAs。
在除去生长衬底之后，可以使余下的外延层变薄，例如除去与衬底16最接近并且材料品质低的部分n-型区域10。可以通过例如化学机械抛光、传统干蚀刻或者光电化学蚀刻(PEC)使外延层变薄。可以使外延层的顶面具有纹理或者变粗糙以增加所提取的光量。然后在n-型区域10上形成触点18。触点10可以是例如栅格。可以在触点18下面、即在图2上的区域36的外延层中注入例如氢气，以阻止触点18下面的活性区域14的部分发光。
然后将磷光体晶粒34直接沉积在n-型区域10中暴露出来的表面。可以通过例如电泳沉积、旋涂、喷涂、丝网印刷或者其他印刷技术涂覆磷光体晶粒34。在诸如旋涂或者喷涂之类的技术中，磷光体可以和有机粘结剂一起置于浆料中，然后在沉积浆料之后通过例如加热蒸发掉粘结剂。然后可以涂覆耦合介质32。磷光体颗粒可以是纳米颗粒本身，即大小在100到1000nm范围的颗粒。可以涂覆典型地通过喷雾热解法或其他方法制造的球形磷光体颗粒，形成具有高封装密度的层，其提供了优异的散射性质。而且，可以用例如带隙比磷光体发射出来的光大的材料涂覆磷光体颗粒，例如SiO2、Al2O3、MePO4或多磷酸盐、或其他合适的金属氧化物。
耦合介质32可以是通过化学汽相沉积法所沉积的例如SixN或高折射率玻璃。高折射率玻璃的例子包括Schott玻璃SF59、Schott玻璃LaSF 3、Schott玻璃LaSF N18、及其混合物。这些玻璃可以从SchottGlass Technologies Incorporated，of Duryea，Pa得到。其他高折射率耦合介质的例子包括高折射率硫属化物玻璃，例如(Ge，Sb，Ga)(S，Se)硫属化物玻璃、包括但不局限于GaN的III-V半导体、包括但不局限于ZnS、ZnSe、ZnTe、ZnO、CdS、CdSe和CdTe的II-VI半导体、有机半导体、包括但不局限于氧化钨、氧化钛、氧化镍、氧化锆、氧化铟锡、和氧化铬、铝基氧化物(例如氧化铝和尖晶石)的金属氧化物、包括但不局限于氟化镁和氟化钙的金属氟化物、包括但不局限于Zn、In、Mg和Sn的金属、磷化物化合物、砷化物化合物、锑化物化合物、氮化物化合物、高折射率有机化合物、及其混合物或者合金。
适合的耦合介质的其他例子是结合在结合介质中然后注入到磷光体层34中的高折射率纳米颗粒。在这种实施方案中，将在由发光区域所发射出来的光的波长、折射率比结合介质的大的纳米颗粒分散在基本上透明的结合介质中。选择纳米颗粒以具有小于大约由发光区域所发射的光的波长(例如，峰值波长)的直径，因此基本上不散射所发射的光。优选地，纳米颗粒具有的直径小于发光区域的峰值发射波长的大约1/4。例如，在发光区域发射具有大于大约400nm的波长的光的器件中，纳米颗粒可以具有大约2nm到大约50nm的直径。结合介质基本上是透明的，意味着它透射在由发光区域所发射的峰值波长的光少于大约25％，优选地少于大约10％，更优选小于大约2％，因为吸收或者散射而引起单个通路损失。结合介质可以是有机的或者无机的，并且可以包含例如包括但不限于传统环氧树脂、丙烯酸聚合物、聚碳酸酯、硅树脂聚合物(silicone polymer)、光学玻璃、硫属化物玻璃、螺环化合物、及其混合物的材料。纳米颗粒基本上不吸收在由发光区域所发射的波长的光，特别是在峰值发射波长的光。此处使用的措辞“基本上不吸收”和“基本上不在吸收”是表明在这样实施方案中的纳米颗粒是充分非吸收的，以致于它们并没有将密封剂所透射的光的单个通道损失增加到多于大约30％，优选地不多于大约20％。本领域技术人员应当明白，因由纳米颗粒对发光区域所发射的光的吸收而引起的损失取决于各个纳米颗粒的吸收横截面、结合介质中纳米颗粒的浓度，并且可能取决于纳米颗粒和周围材料之间的相互作用。适合于这种实施方案的纳米颗粒可以包括但不局限于金属氧化物、氮化物、磷酸盐、含氮硅酸盐(nitridosilicate)、及其混合物。适合的金属氧化物可以包括但不局限于氧化钙、氧化铈、氧化铪、氧化钛、氧化锌、氧化锆、及其组合。例如可以从Degussa-Huls AG ofFrankfurt/Main Germany得到尺寸在例如大约2nm到大约10nm范围的这种金属氧化物的纳米颗粒。适合于这种实施方案的纳米颗粒还可以包括II-IV半导体(例如硫化锌、硒化锌、硫化钙、硒化钙、碲化钙以及它们的三价和四价混合物)的纳米颗粒，以及III-V半导体(例如III-氮化物、III-磷化物及其混合物)的纳米颗粒。可以使用双壳(double-shell)或者多壳(multi-shell)纳米颗粒。在前一个处理步骤中纳米颗粒可以悬浮在结合介质中或者涂覆在磷光体上，如上所述。
适合的耦合介质的另一个例子是通过溶胶-凝胶法注入在磷光体晶粒34中的高折射率玻璃。然后通过接下来的退火除去任何有机物。在耦合介质是溶胶-凝胶玻璃的实施方案中，为了使玻璃的折射率与器件的磷光体和III-氮化物层的折射率接近匹配，可以在SiO2溶胶-凝胶玻璃中包含一种或多种材料(例如钛、铈、铅、镓、铋、镉、锌、钡或铝的氧化物)，以增大玻璃的折射率。例如，Y3Al5O12:Ce3+磷光体的折射率在大约1.75到1.8之间，并且可以粘着到折射率为大约2.4的III-氮化物层上。在这种器件的优选实施方案中，耦合介质的折射率在Y3Al5O12:Ce3+和III-氮化物层的折射率之间。例如，Fabes等的“Porosityand composition effects in sol-gel derived interferencefilters，”Thin Solid Films 254(1995)175-180，在此作为参考而引入，其叙述了具有计算为n＝1.85的理论折射率的SiO2-TiO2-Al2O3涂覆溶液。可以将这种溶液注入到磷光体中形成磷光体和涂覆溶液浆料，然后例如通过旋涂将其沉淀在器件表面上，干燥，然后在适于涂覆溶液的温度下烧制。
在磷光体晶粒34、耦合介质32和触点18之前或者之后，将本领域中已知的二级光学器件例如二向色性镜或者偏振器设置在发射表面上，从而在亮度或者转换效率方面提供进一步的益处。
图5和图6示出了本发明的实施方案，其中磷光体是陶瓷磷光体，而不是磷光体粉末。陶瓷磷光体可以通过在高压下加热粉末磷光体直到磷光体颗粒的表面开始变软并且熔化而形成。部分熔化的颗粒粘在一起形成坚硬的颗粒的结块。单轴的或均衡的压制步骤和已完成的“坯体”的真空烧结对于形成多晶陶瓷层可以是必要的。通过调整加热或者压制条件、制造方法、所使用的磷光体颗粒前体、和磷光体材料的适当晶格，可以控制陶瓷磷光体的半透明度，即它产生的散射量，从高度不透明到高度透明。除了磷光体之外，例如可以包括其他陶瓷形成材料例如氧化铝，从而易于形成陶瓷或者调整陶瓷的折射率。
与光学上表现为没有光学不连续的单个的、大的磷光体颗粒的薄膜不同，陶瓷磷光体表现为紧密压实的各个磷光体颗粒，使得在不同磷光体颗粒之间的界面处有微小的光学不连续。因此，陶瓷磷光体在光学上几乎是均匀的并且具有与形成陶瓷磷光体的磷光体材料同样的折射率。与保形(conformal)磷光体层或者设置在透明材料例如树脂上的磷光体层不同，发光陶瓷除了磷光体自身之外通常不需要任何粘结剂材料(例如有机树脂或者环氧树脂)，因此在各个磷光体颗粒之间具有非常小的间隔或者不同折射率的材料。
例如，YAG:Ce陶瓷可以如下形成：在辊子工作台上用1.5kg高纯度氧化铝球(2mm直径)在异丙醇中研磨40g Y2O3(99.998％)、32g Al2O3(99.999％)和3.44g CeO212个小时。然后在CO气氛下在1300℃将经过干燥的前体粉末煅烧两个小时。然后在乙醇条件下用行星式球磨机(玛瑙球)将得到的YAG粉末解聚。然后在干燥之后粉浆浇铸陶瓷浆料，得到陶瓷坯体。然后在1700℃下在石墨板之间烧结该坯体两个小时。
可以形成为陶瓷磷光体的磷光体的例子包括具有如下通式的铝石榴石(aluminum garnet)磷光体：在黄-绿色范围发光的(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12:CeaPrb，其中0＜x＜1，0＜y＜1，0＜z≤0.1，0＜a≤0.2以及0＜b≤0.1，例如Lu3Al5O12:Ce3+和Y3Al5O12:Ce3+；以及在红色范围内发光的(Sr1-x-yBaxCay)2-zSi5-aAlaN8-aOa:Euz 2+，其中0≤a＜5，0＜x≤1，0≤y≤1以及0＜z≤1，例如Sr2Si5N8:Eu2+。适合的Y3Al5O12:Ce3+陶瓷厚片可以从Baikowski International Corporation of Charlotte，NC购买到。其它发射绿色、黄色和红色光的磷光体也是适合的，包括(Sr1-a-bCabBac)SixNyOz:Eua 2+(a＝0.002-0.2，b＝0.0-0.25，c＝0.0-0.25，x＝1.5-2.5，y＝1.5-2.5，x＝1.5-2.5)，其包括例如SrSi2N2O2:Eu2+；(Sr1-u-v-xMguCavBax)(Ga2-y-zAlyInzS4):Eu2+，其包括例如SrGa2S4:Eu2+；Sr1-xBaxSiO4:Eu2+；以及(Ca1-xSrx)S:Eu2+，其中0＜x≤1，包括例如CaS:Eu2+和SrS:Eu2+。
陶瓷磷光体通过位于核结构58和陶瓷磷光体之间界面处的结合56，直接地通过晶片结合或者通过中间结合层(图5和6中未示出)结合到核结构58上。如果使用结合层，那么选择结合层以具有的折射率在陶瓷磷光体和涂覆结合层的III-氮化物层的折射率之间。许多上述高折射率耦合材料可以采用适当的结合层。
在图5的实施方案中，p-触点20是反射性的，或者一额外的反射器可以设置与触点20相邻，使得将所有的光发射都向陶瓷磷光体定向。任选的反射器54，例如分布式布拉格反射器，可以设置在与III-氮化物器件层相对的陶瓷磷光体的表面上，以控制来自活性区域的避开陶瓷磷光体而未转换的发射量。例如，在活性区域发射UV光的器件中，反射器54可以完全过滤未转换的发射。在活性区域发射蓝光的器件中，反射器54可以减弱避开陶瓷磷光体而未转换的蓝光的量，从而获得所需的发射光谱。在一些实施方案中，可以省略反射器54并且可以使与器件层相对的陶瓷磷光体52的表面变粗糙、具有纹理或者成形以提高光提取。此外，可以控制陶瓷磷光体的半透明度，即它产生的散射量，从高度不透明到高度透明，如上所述。
图5中示出的实施方案可以结合到封装元件中，如图13中所示。在2004年10月28日提交的申请序列号为No.10/977,294，“封装-集成薄膜LED(Package-Integrated Thin Film LED)”中更加详细地描述了这种器件，在此作为参考而引入。在图13中示出的器件中，包括发光区域的半导体结构130通过结合界面56结合到陶瓷磷光体52上，如下所述。触点18和20形成在半导体结构130上，通过金属界面134与封装元件132连接。封装元件132通常具有超过半导体结构130的横向伸展(lateral extent)。在一些实施方案中，设置在封装元件132和陶瓷磷光体52之间的所有层具有低于100微米的厚度。虽然图13示出倒装芯片构造中半导体结构130安装在封装元件132上，该倒装芯片构造中两个触点18和20形成在半导体结构的同一侧上，但是在可替换的实施方案中，可以除去部分陶瓷磷光体52而使触点18形成在半导体结构130的与触点20的相对侧上。
在图6中示出的实施方案中，p-触点60和/或n-触点61至少是部分透明的并且反射器62形成或者附着在陶瓷磷光体52的背面上，使得所有光发射通过触点60和61被引导出器件。
在一些实施方案中，陶瓷磷光体包括具有惰性颗粒的部分而不是磷光体，或者具有磷光体晶体而没有活性掺杂剂的部分，使得这些部分不吸收光而发射光。例如SiNx可以包括在陶瓷磷光体52中作为惰性颗粒。陶瓷磷光体中的活性掺杂剂还可以是分层次的，例如使得与器件表面最接近的陶瓷部分中的磷光体具有最高掺杂浓度。当距器件表面的距离增大时，磷光体中的掺杂浓度降低。掺杂剂曲线图(profile)可以采用任意形状，包括例如线形的、台阶分级的、或者幂定律曲线图，并且可以包括多个恒定掺杂浓度的区域或者没有恒定掺杂浓度的区域。在一些实施方案中，距器件表面最远的陶瓷层部分可以不包括任何磷光体或者任何掺杂剂。可以设计陶瓷磷光体厚度和活性掺杂剂的负载以产生所需要的发射光谱。在一些实施方案中，陶瓷磷光体包括多种磷光体，每种磷光体发射相同或者不同波长的光。所述多种磷光体可以混合成或者形成为单一均质的陶瓷磷光体，或者所述多种磷光体可以形成为在单独的层中，这些单独的层在陶瓷磷光体内构成磷光体层的叠层。类似地，相同磷光体材料的多个陶瓷层可以结合在一起形成多层陶瓷叠层。包括陶瓷磷光体的器件还可以与传统磷光体层、这种保形磷光体层或者置于环氧树脂中的磷光体结合使用。
图5中示出的器件可以通过使用陶瓷磷光体52作为生长衬底来制造，如图7，8和9中所示。在图7中，在生长衬底16上生长单个晶核层58。在图7的优选实施方案中，核层58是GaN并且生长衬底16是蓝宝石。核层58的表面和陶瓷磷光体52的表面结合在一起。任选的结合层可以设置在两个结合的表面之间。结合层优选是高度透明的。在优选实施方案中，结合层具有高折射率，例如在陶瓷磷光体52的折射率和核层58的折射率之间。适当的高折射率材料的例子是TiO2。如果该结合层很薄，可以使用透明的低折射率材料作结合层。例如，在厚度小于例如时，可以使用SiO2作结合层。如果该结合层极薄，可以使用吸收材料作为结合层。例如在厚度小于例如几个单层时，可以使用Si作为结合层。
典型地在升高的温度和压力下结合表面。用于结合的适当温度可以是例如在500到1000℃之间；用于结合的适当压力可以是例如在5到1000psi之间。在上述温度和压力下在例如N2气氛下可以将这些表面压制在一起指定时间段例如至少一小时。在这些条件下，在两个表面之间形成稳健结合。这种结合可以经受住对于结合之后的进一步的半导体加工(例如生长附加的半导体层)来说所必须的温度。结合之后，可以通过适合于衬底的方法(例如对如上所述的蓝宝石衬底进行激光熔融、蚀刻或者研磨)除去生长衬底16。
可替换地，如图8中所示，单个晶核层58可以形成为层74的一部分，该层74形成在衬底16的上方。在图8中，核层58可以是例如SiC、Al2O3、GaN或AlN。生长衬底16可以是任何合适的衬底。将注入核素(species)例如氢注入到层74中，如图8中在72处所示。然后如上所述将核层58的表面和陶瓷磷光体52的表面结合在一起，参考图7。结合之后，通过加热所述结构直到注入核素72分解，将生长衬底从核层58和陶瓷磷光体52释放，而将生长衬底16和余下的层74除去。
在图7和8中，在陶瓷磷光体52和核层58之间形成结合，这能够经受住其他半导体层的生长。如图9中所示，然后在核层58的上方生长包括n-型区域10、活性区域14和p-型区域12的器件层。在已完成的器件中，为了使从核层58的侧面逃逸出来的光量最小化，希望核层58尽可能薄，例如薄于100微米，优选地薄于10微米，更优选薄于1微米。在生长III-氮化物器件层之前，可以任选地使核层58变薄。
在图7中的优选实施方案中，衬底16是蓝宝石，核层58是GaN或者AlN。纤维锌矿III-氮化物层具有镓晶面和氮晶面。当GaN或者AlN以传统方式生长在蓝宝石上时，晶体层的顶面典型地是镓表面。相应地，当核层58结合到陶瓷磷光体52上并且除去生长衬底时，核层58暴露出来的表面是氮表面。在核层58的氮表面上可以生长包括n-型区域10、活性区域14和p-型区域12的器件层，氮表面取向与核层58相同。可以通过例如分子束外延或者MOCVD生长氮表面膜，并且在“Morpohological and structure characteristics ofhomowpitaxial GaN grown by metalorganic chemical vapourdeposition(MOCVD)，”Joural of Crystal Growth 204(1999)419-428以及“Playing with Polarity”，Phys.Stat.So.(b)228，No.2，505-512(2001)中更加详细地被描述，二者在此作为参考而引入。可替换地，在器件层之前可以生长使到镓表面(例如低温半导体层)上的晶体生长重新取向的结构，使得器件层以传统方式生长在镓表面上。在一些实施方案中，核层58可以用氮表面生长在表面上，使得在结合陶瓷磷光体58和除去生长衬底16之后，暴露出来的表面是镓表面。在器件层生长之后，可以通过常规方法将器件层加工成图5和6中示出的任一种器件，例如通过蚀刻暴露一部分n-型区域10，然后在n-型区域10和p-型区域12上形成触点。陶瓷磷光体可以包括载体，在将晶片切成小块之前通过常规方法(例如蚀刻或者研磨)可以将载体除去或者使载体变薄。
可替换地，图5和6中示出的器件可以通过在生长衬底上生长器件层，然后将器件层结合到作为主衬底的陶瓷磷光体上来制造，如图10和11中所示。在这种实施方案中，在活性区域和n-型区域之前生长p-型区域。因此，n-型区域或者未掺杂的区域76直接生长在生长衬底16的上方。这个区域可以包括任选预备层(例如缓冲层或者核层)，以及任选的释放层，该释放层被设计成易于释放生长衬底或者在除去衬底之后使外延层变薄。然后生长P-型区域12，接着是活性区域14和n-型区域10。然后通过粘结剂56将n-型区域10的表面结合到陶瓷磷光体层52上，如图10中所示并且如上参考图7所述。虽然图10示出了在n-型区域10的表面上形成的粘结剂56，但是结合到陶瓷磷光体52上的半导体结构的表面可以是p-型、n-型、或者未掺杂的。粘结剂56必须是透明的。可以在两个结合表面之间设置结合层以便于结合，如上所述。如图11中所示一旦生长衬底16被除去，就会蚀刻外延层以除去直接生长在生长衬底上方的区域，暴露出p-型区域12。可以通过例如再生长p+材料78或者通过在氨条件下退火对p-型区域12的表面进行处理，以增加孔的密度以及修补由蚀刻所造成的损坏，正如在申请序列号No.[Attorney Docker Number LUM-04-10-02]，“Polarization-Reversed III-Nitride Ligtht-emitting Device”中更加详细的描述，在此通过参考而引入。然后通过常规方法将晶片加工成图5和6中任何一种器件；然而，这种器件不会包括图5和6中示出的核层58，而是会在陶瓷磷光体层52和n-型区域10之间设置粘结剂56。
陶瓷磷光体的优点，特别是在图5中示出的通过陶瓷磷光体从器件中提取光的器件中，是能够将陶瓷层模塑、研磨、机械加工、火印或者抛光成所需形状，例如用于增大光提取。发光陶瓷层通常具有高折射率，例如Y3Al5O12:Ce3+陶瓷磷光体的折射率为1.75到1.8。为了避免在高折射率陶瓷磷光体和空气之间的界面上的全内反射，陶瓷磷光体可以成形为透镜，例如半球形透镜或者菲涅耳透镜。通过任意地或者以重复的图案使陶瓷磷光体的顶部变粗糙或具有纹理可以进一步改善来自器件的光提取。而且，可以选择陶瓷磷光体的延伸以提供相对于观察角度来说均匀的颜色。例如，在一种或者多种磷光体与发光区域发射出的未转换的蓝光相结合的器件中，如果陶瓷磷光体明显小于活性区域，那么当从顶部观察时，白光看起来是由蓝色环包围的。如果陶瓷磷光体明显大于活性区域，那么白光可能看起来是由黄色环包围的。在陶瓷磷光体成形为透镜的实施方案中，对于底部长度至少是其上安装有陶瓷磷光体的器件表面长度的两倍的成形陶瓷磷光体来说，可以期望有利的光提取。在这种实施方案中，可以选择波长-转换磷光体在陶瓷主体内的位置，以提供均匀的光混合。例如，波长转换材料可以限于陶瓷主体中与器件的顶部半导体层最接近的那部分内。在其他实施方案中，波长转换材料可以设置在第一陶瓷磷光体主体中，然后附着到第二成形的透明陶瓷主体。
图12是封装的发光器件的分解图，如在美国专利6,274,924中详细所述。散热块(slug)100放置在插入模铸(insert-molded)的引线框中。插入模铸的引线框是例如在提供电通路的金属框106的周围模塑的填充塑料材料105。块100可以包括光学反射器帽状物(cup)102。发光器件小块104，其可以是上述实施方案中描述的任何一种器件，通过导热子架103直接或者间接地安装在块100上。可以增加盖子108，所述盖子108可以是光学透镜。
本发明的实施方案可以提供许多好处。首先，从活性区域中发射出来的光被磷光体吸收的可能性很高，损失非常小。当光被磷光体重发射时，它必定逃离磷光体区域，但是在磷光体区域之内的环境中几乎没有光学损失。通过磷光体的散射和再次吸收以及重发射，磷光体区域提供了许多随机化事件，对于光逃离磷光体区域进入周围环境中是必要的。因此，上述实施方案可以提供比现有技术器件更好的光提取。第二，上述一些实施方案消除了在图1中所示的现有技术中所用的有机粘结剂，从而消除了由那些有机粘结剂例如在高温工作过程中的劣化所引起的问题。
在上述实施方案中可以使用具有上述所需性质(例如初级发光层发射的光的高吸收性和高量子效率)的磷光体的任何发光材料有效地产生光。因此，本发明不局限于磷光体。在本发明的一些实施方案中，可以使用波长-转换材料(例如一些III-V和II-VI半导体)代替磷光体，在发光区域发射的波长所述波长-转换材料的折射率的虚数部分(imaginary component)k很大，并且在经过转换的波长k是可忽略的。特别地，在适当的材料中，在初级发光区域发射的波长，k大于0.01，更优选大于0.1，并且更优选大于1。在这种实施方案中，特别是在III-V和II-VI半导体实施方案中，在发光材料中为了有效的向下-转换(down-coversion)效率，可能需要来自初级发光区域的高能注量(100W/cm2或者更高)。此外，提供用于从发光材料中提取光的方法，例如加纹理、变粗糙或者成形。
已经详细地描述了本发明，本领域技术人员应当明白，即使给出本发明的公开，但是可以对本发明进行改动，而不脱离此处描述的本发明概念的精神。例如，虽然上述实施例描述了III-氮化物半导体器件，但是可以使用其他材料体系的器件。而且，虽然上述实施例包括磷光体，但是应当理解也可以使用其他发光材料，例如半导体纳米颗粒，量子点或者有机染料。因此，本发明的范围不局限于示出和描述的特定实施方案。

Claims (26)

1.一种制造发光器件的方法，包括：
提供一种包括磷光体的陶瓷主体，该磷光体构造成吸收第一峰值波长的光并且发射第二峰值波长的光；
将陶瓷主体结合到核结构的表面上；并且在核结构上生长半导体结构，该半导体结构包括设置在n-型区域和p-型区域之间的发光区域，该发光区域构造成发射第一峰值波长的光；
其中在生长之前，该核结构的厚度小于100微米。
2.根据权利要求1的制造发光器件的方法，其中结合包括形成没有金属或者粘合剂的结合。
3.根据权利要求1的制造发光器件的方法，其中结合包括在高于500℃的温度以及大于5psi的压力下将陶瓷主体和核结构压制在一起。
4.根据权利要求1的制造发光器件的方法，其中核结构选自GaN、AlN、SiC和Al2O3。
5.根据权利要求1的制造发光器件的方法，还包括：
提供形成在衬底上的核结构；以及
在结合之后，除去所述衬底。
6.根据权利要求1的制造发光器件的方法，还包括：
蚀刻半导体结构以暴露出n-型区域和p-型区域的一部分；以及
在n-型区域和p-型区域中的每一个上形成触点。
7.根据权利要求6的制造发光器件的方法，其中至少一个触点是反射性的。
8.根据权利要求1的制造发光器件的方法，还包括将陶瓷主体成形为透镜。
9.根据权利要求1的制造发光器件的方法，还包括使陶瓷主体的表面具有纹理或者变粗糙。
10.根据权利要求1的制造发光器件的方法，其中陶瓷主体是透明的。
11.根据权利要求1的制造发光器件的方法，其中陶瓷主体是不透明的。
12.根据权利要求1的制造发光器件的方法，其中在生长之前，核结构的厚度小于10微米。
13.根据权利要求1的制造发光器件的方法，其中在生长之前，核结构的厚度小于1微米。
14.根据权利要求1的制造发光器件的方法，还包括在核结构和陶瓷主体之间提供结合层。
15.一种发光器件，包括：
包括多个层的半导体结构，该多个层包括n-型区域、p-型区域以及夹在n-型区域和p-型区域之间的发光区域；以及
与多个层中之一直接接触的发光材料，其中在发光区域发射的光的波长，发光材料的折射率的虚数部分k大于0.01。
16.根据权利要求15的发光器件，其中k大于0.1。
17.根据权利要求15的发光器件，其中发光区域包括III-氮化物材料。
18.根据权利要求15的发光器件，其中发光材料包括磷光体。
19.根据权利要求18的发光器件，其中发光材料包括陶瓷磷光体。
20.根据权利要求18的发光器件，其中发光材料包括磷光体晶粒。
21.根据权利要求20的发光器件，还包括设置在磷光体晶粒上方的透明材料，该透明材料的折射率大于1.7。
22.根据权利要求21的发光器件，其中透明材料包括玻璃。
23.根据权利要求22的发光器件，其中玻璃包括溶胶-凝胶玻璃。
24.根据权利要求21的发光器件，还包括设置在透明材料中的直径在2nm到50nm的纳米颗粒。
25.根据权利要求20的发光器件，其中使多个层中与磷光体晶粒直接接触的其中一个的表面具有纹理或者变粗糙。
26.根据权利要求15的发光器件，其中：
半导体结构结合到封装元件，该封装元件具有的横向伸展超过半导体结构的横向伸展；以及
该封装元件与发光材料间隔小于100微米。
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Families Citing this family (161)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI240434B (en) * 2003-06-24 2005-09-21 Osram Opto Semiconductors Gmbh Method to produce semiconductor-chips
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
US20050215041A1 (en) * 2004-03-23 2005-09-29 Seng William F Low temperature, long term annealing of nickel contacts to lower interfacial resistance
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US8748923B2 (en) * 2005-03-14 2014-06-10 Philips Lumileds Lighting Company Llc Wavelength-converted semiconductor light emitting device
TWI248222B (en) * 2005-05-12 2006-01-21 Univ Nat Central Light emitting diode and manufacturing method thereof
DE102005038698A1 (de) * 2005-07-08 2007-01-18 Tridonic Optoelectronics Gmbh Optoelektronische Bauelemente mit Haftvermittler
JP5029362B2 (ja) * 2005-08-10 2012-09-19 宇部興産株式会社 発光ダイオード用基板及び発光ダイオード
KR100750933B1 (ko) * 2005-08-14 2007-08-22 삼성전자주식회사 희토류 금속이 도핑된 투명 전도성 아연산화물의나노구조를 사용한 탑에미트형 질화물계 백색광 발광소자및 그 제조방법
DE102006004591A1 (de) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
US7514721B2 (en) * 2005-11-29 2009-04-07 Koninklijke Philips Electronics N.V. Luminescent ceramic element for a light emitting device
WO2007081719A2 (en) 2006-01-05 2007-07-19 Illumitex, Inc. Separate optical device for directing light from an led
JP2007258486A (ja) * 2006-03-23 2007-10-04 Toyota Central Res & Dev Lab Inc 白色発光ダイオード
WO2008025723A1 (en) * 2006-08-29 2008-03-06 Osram Sylvania Inc. Enhanced emission from phosphor-converted leds using interferometric filters
DE102006046199A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2010506402A (ja) 2006-10-02 2010-02-25 イルミテックス， インコーポレイテッド Ｌｅｄのシステムおよび方法
TW200822788A (en) * 2006-11-09 2008-05-16 Univ Nat Central Method of using laser in fabricating GaN device
WO2008056300A1 (en) 2006-11-10 2008-05-15 Philips Intellectual Property & Standards Gmbh Illumination system comprising monolithic ceramic luminescence converter
JP2010510655A (ja) * 2006-11-15 2010-04-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｎ面ＧａＮ、ＩｎＮおよびＡｌＮならびにそれらの合金を用いた発光ダイオードおよびレーザダイオード
US20080111144A1 (en) * 2006-11-15 2008-05-15 The Regents Of The University Of California LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS
US8193020B2 (en) * 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
JP2010509177A (ja) * 2006-11-15 2010-03-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 有機金属化学気相成長法による、高品質のＮ面ＧａＮ、ＩｎＮおよびＡｌＮならびにそれらの合金のヘテロエピタキシャル成長の方法
CN105206733A (zh) 2006-12-05 2015-12-30 皇家飞利浦电子股份有限公司 特别具有发光陶瓷的照明装置
KR100872281B1 (ko) * 2006-12-15 2008-12-05 삼성전기주식회사 나노와이어 구조체를 이용한 반도체 발광소자 및 그제조방법
US7902564B2 (en) * 2006-12-22 2011-03-08 Koninklijke Philips Electronics N.V. Multi-grain luminescent ceramics for light emitting devices
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
WO2009023051A1 (en) * 2007-05-14 2009-02-19 Northwestern University Ceramic composite thin films
US20100323177A1 (en) * 2007-05-14 2010-12-23 Northwestern University Graphene oxide sheet laminate and method
US8709213B2 (en) 2007-05-14 2014-04-29 Northwestern University Composite graphene oxide-polymer laminate and method
DE102007025092A1 (de) * 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US20090039375A1 (en) * 2007-08-07 2009-02-12 Cree, Inc. Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same
US8128249B2 (en) * 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
US7799267B2 (en) * 2007-09-14 2010-09-21 The Penn State Research Foundation Method for manufacture of transparent ceramics
DE102008005344A1 (de) 2007-09-21 2009-04-02 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
DE102008012316B4 (de) * 2007-09-28 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlichtquelle mit einer Primärstrahlungsquelle und einem Lumineszenzkonversionselement
CN101419323A (zh) * 2007-10-22 2009-04-29 鸿富锦精密工业（深圳）有限公司 微型相机模组及其制作方法
WO2009053881A1 (en) * 2007-10-25 2009-04-30 Koninklijke Philips Electronics N.V. Polarized light emitting device
EP2203938A1 (en) * 2007-10-26 2010-07-07 Cree Led Lighting Solutions, Inc. Illumination device having one or more lumiphors, and methods of fabricating same
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
KR100901369B1 (ko) * 2007-11-19 2009-06-05 일진반도체 주식회사 백색 발광다이오드 칩 및 그 제조 방법
KR100998233B1 (ko) 2007-12-03 2010-12-07 서울반도체 주식회사 슬림형 ｌｅｄ 패키지
RU2010127356A (ru) * 2007-12-03 2012-01-10 Конинклейке Филипс Электроникс Н.В. (Nl) Керамический материал для сид, обладающий пониженным светорассеянием, и способ его изготовления
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
RU2010132369A (ru) * 2008-01-03 2012-02-10 Конинклейке Филипс Электроникс Н.В. (Nl) Устройство отображения и осветительное устройство
TW200938768A (en) * 2008-01-22 2009-09-16 Koninkl Philips Electronics Nv Illumination device with LED and a transmissive support comprising a luminescent material
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
KR101470020B1 (ko) * 2008-03-18 2014-12-10 엘지이노텍 주식회사 샌드위치 구조의 웨이퍼 결합 및 포톤 빔을 이용한 단결정 반도체 박막 전이
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
US8288943B2 (en) * 2008-04-08 2012-10-16 Koninklijke Philips Electronics N.V. Illumination device with LED and a transmissive support comprising a luminescent material
KR20100072163A (ko) * 2008-05-20 2010-06-30 파나소닉 주식회사 반도체 발광 장치, 및, 이를 이용한 광원 장치 및 조명 시스템
TWI385773B (zh) * 2008-05-21 2013-02-11 Lefram Technology Corp Lead frame carrier and method of manufacturing the same
DE102008039790B4 (de) 2008-08-26 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US20120181919A1 (en) * 2008-08-27 2012-07-19 Osram Sylvania Inc. Luminescent Ceramic Composite Converter and Method of Making the Same
DE102008045331A1 (de) * 2008-09-01 2010-03-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
WO2010035171A2 (en) * 2008-09-23 2010-04-01 Koninklijke Philips Electronics N.V. Lighting device with thermally variable reflecting element
US8427605B2 (en) * 2008-09-23 2013-04-23 Koninklijke Philips Electronics N.V. Illumination device with electrical variable scattering element
US8287346B2 (en) * 2008-11-03 2012-10-16 Cfph, Llc Late game series information change
US8957439B2 (en) * 2008-12-02 2015-02-17 Koninklijke Philips Electronics N.V. LED assembly
US9711688B2 (en) 2008-12-02 2017-07-18 Koninklijke Philips N.V. Controlling LED emission pattern using optically active materials
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
TWI473246B (zh) * 2008-12-30 2015-02-11 Epistar Corp 發光二極體晶粒等級封裝
US20110316033A1 (en) * 2009-03-05 2011-12-29 Koito Manufacturing Co., Ltd. Light emitting module, method of manufacturing the light emitting module, and lamp unit
US20100244065A1 (en) 2009-03-30 2010-09-30 Koninklijke Philips Electronics N.V. Semiconductor light emitting device grown on an etchable substrate
US8299473B1 (en) * 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8393745B2 (en) 2009-04-21 2013-03-12 Koninklijke Philips Electronics N.V. Illumination device with a phosphor
DE102009019161A1 (de) * 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
US9480125B2 (en) 2009-05-15 2016-10-25 Achrolux Inc Light-emitting structure and a method for fabricating the same
RU2538100C2 (ru) * 2009-05-28 2015-01-10 Конинклейке Филипс Электроникс Н.В. Осветительное устройство с корпусом, заключающим в себе источник света
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
JP2010287687A (ja) * 2009-06-10 2010-12-24 Koito Mfg Co Ltd 発光モジュールおよび発光モジュールの製造方法
US8507304B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US8148241B2 (en) * 2009-07-31 2012-04-03 Applied Materials, Inc. Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
US8203161B2 (en) * 2009-11-23 2012-06-19 Koninklijke Philips Electronics N.V. Wavelength converted semiconductor light emitting device
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
JP5050045B2 (ja) * 2009-12-22 2012-10-17 株式会社東芝 発光装置
JP5047264B2 (ja) 2009-12-22 2012-10-10 株式会社東芝 発光装置
US20110195583A1 (en) 2010-02-11 2011-08-11 Koninklijke Philips Electronics N.V. Wavelength converting layer for a light emitting device
EP2541631A4 (en) * 2010-02-25 2015-03-18 Lightizer Korea Co Ltd LIGHT EMITTING DIODE AND METHOD OF MANUFACTURE
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
WO2011111293A1 (ja) 2010-03-10 2011-09-15 パナソニック株式会社 Ｌｅｄ封止樹脂体、ｌｅｄ装置およびｌｅｄ装置の製造方法
US8530883B2 (en) * 2010-03-11 2013-09-10 Light-Based Technologies Incorporated Manufacture of quantum dot-enabled solid-state light emitters
JP2011216543A (ja) * 2010-03-31 2011-10-27 Ube Industries Ltd 発光ダイオード、それに用いられる発光ダイオード用基板及びその製造方法
KR20130029387A (ko) 2010-04-08 2013-03-22 니치아 카가쿠 고교 가부시키가이샤 발광 장치 및 그 제조 방법
US8154052B2 (en) * 2010-05-06 2012-04-10 Koninklijke Philips Electronics N.V. Light emitting device grown on wavelength converting substrate
JP5343040B2 (ja) * 2010-06-07 2013-11-13 株式会社東芝 半導体発光装置
EP2407826A1 (en) 2010-07-08 2012-01-18 Koninklijke Philips Electronics N.V. Projection system comprising a solid state light source and a luminescent material.
EP2407825A1 (en) 2010-07-08 2012-01-18 Koninklijke Philips Electronics N.V. Projection system comprising a solid state light source and a luminescent material.
EP2596284A4 (en) * 2010-07-19 2015-04-29 Rensselaer Polytech Inst SOLIDS FULL-SUBSTANCE WHITE LIGHT SOURCE, METHOD FOR THE PRODUCTION THEREOF AND APPLICATIONS THEREOF
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
DE102010034923A1 (de) * 2010-08-20 2012-02-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Schichtverbunds aus einer Lumineszenzkonversionsschicht und einer Streuschicht
US8242684B2 (en) * 2010-09-27 2012-08-14 Osram Sylvania Inc. LED wavelength-converting plate with microlenses
US8334646B2 (en) 2010-09-27 2012-12-18 Osram Sylvania Inc. LED wavelength-coverting plate with microlenses in multiple layers
US8829777B2 (en) 2010-09-27 2014-09-09 Osram Sylvania Inc. Ceramic wavelength converter and LED light source containing same
CN106935576A (zh) 2010-09-29 2017-07-07 皇家飞利浦电子股份有限公司 波长转换的发光器件
TWI446590B (zh) 2010-09-30 2014-07-21 Everlight Electronics Co Ltd 發光二極體封裝結構及其製作方法
CN102456777A (zh) * 2010-10-21 2012-05-16 展晶科技(深圳)有限公司 固态半导体制作方法
EP2447746A1 (en) 2010-10-28 2012-05-02 Koninklijke Philips Electronics N.V. Lighting device with waveguide plate
KR101843760B1 (ko) 2010-12-01 2018-05-14 닛토 덴코 가부시키가이샤 도펀트 농도 구배를 갖는 방사성 세라믹 재료들 및 그것을 제조하고 사용하는 방법들
DE102011012298A1 (de) * 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
JP5570027B2 (ja) * 2011-02-14 2014-08-13 大学共同利用機関法人自然科学研究機構 透光性多結晶材料とその製造方法
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
EP2678404B1 (en) * 2011-02-24 2017-10-18 Nitto Denko Corporation Light emitting composite with phosphor components
DE102011014845B4 (de) 2011-03-23 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauteils
KR101325323B1 (ko) * 2011-03-31 2013-11-08 한양대학교 산학협력단 광결정 구조체, 이를 포함하는 발광 다이오드 및 이의 제조방법
US8884330B2 (en) 2011-04-13 2014-11-11 Osram Sylvania Inc. LED wavelength-converting structure including a thin film structure
US8492182B2 (en) * 2011-04-29 2013-07-23 Osram Opto Semiconductors Gmbh Method for the producing of a light-emitting semiconductor chip, method for the production of a conversion die and light-emitting semiconductor chip
JP2012243618A (ja) * 2011-05-20 2012-12-10 Stanley Electric Co Ltd 光源装置および照明装置
CN103503571B (zh) * 2011-06-28 2016-03-30 松下知识产权经营株式会社 有机电致发光元件
JP6393187B2 (ja) * 2011-08-16 2018-09-19 日東電工株式会社 蛍光体組成物およびその製造方法
DE102011084949B4 (de) * 2011-10-21 2016-03-31 Osram Gmbh Konverteranordnung, Verfahren zum Herstellen der Konverteranordnung und Beleuchtungsanordnung
US8931922B2 (en) * 2012-03-22 2015-01-13 Osram Sylvania Inc. Ceramic wavelength-conversion plates and light sources including the same
JP5842701B2 (ja) * 2012-03-27 2016-01-13 信越化学工業株式会社 希土類元素が拡散された酸化物セラミック蛍光材料
CN104185908B (zh) * 2012-03-29 2017-12-22 皇家飞利浦有限公司 用于led应用的无机结合剂中的磷光体
US9343613B2 (en) 2012-03-29 2016-05-17 Koninklijke Philips N.V. Phosphor in inorganic binder for LED applications
WO2013144798A1 (en) * 2012-03-30 2013-10-03 Koninklijke Philips N.V. Optical cavity including a light emitting device and wavelength converting material
JP2013211399A (ja) * 2012-03-30 2013-10-10 Toshiba Corp 半導体発光素子
WO2013179626A1 (ja) * 2012-05-31 2013-12-05 パナソニック株式会社 Ｌｅｄモジュール
JP5546589B2 (ja) * 2012-07-13 2014-07-09 株式会社東芝 発光装置
JP6003402B2 (ja) * 2012-08-28 2016-10-05 住友大阪セメント株式会社 光半導体発光装置、照明器具、及び表示装置
TWI474516B (zh) 2012-08-30 2015-02-21 Lextar Electronics Corp 覆晶式發光二極體結構及其製造方法
CN103682020A (zh) * 2012-08-31 2014-03-26 展晶科技(深圳)有限公司 发光二极管晶粒的制造方法
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2014139998A (ja) * 2013-01-21 2014-07-31 Toshiba Corp 半導体発光装置
JP6299478B2 (ja) 2013-06-26 2018-03-28 日亜化学工業株式会社 発光装置およびその製造方法
JP6045999B2 (ja) * 2013-07-31 2016-12-14 株式会社東芝 半導体発光装置及びその製造方法
KR20150044242A (ko) * 2013-10-16 2015-04-24 일진엘이디(주) 발광 다이오드
CN108198875A (zh) * 2013-11-11 2018-06-22 密歇根大学董事会 装配薄膜光电子器件的工艺
CH709020B1 (de) * 2013-12-24 2018-10-31 Daniel Rytz Dr Lichtdurchlässiges Objekt und dessen Anwendung.
CN105045022B (zh) * 2014-04-25 2017-07-04 台达电子工业股份有限公司 光源系统及其波长转换装置
US9891511B2 (en) 2014-04-25 2018-02-13 Delta Electronics, Inc. Illumination system and wavelength-converting device thereof
KR102171024B1 (ko) * 2014-06-16 2020-10-29 삼성전자주식회사 반도체 발광소자 패키지의 제조 방법
WO2015195820A1 (en) * 2014-06-18 2015-12-23 Osram Sylvania Inc. Method of making a ceramic wavelength converter assembly
WO2016058828A1 (en) * 2014-10-14 2016-04-21 Philips Lighting Holding B.V. Sideward emitting luminescent structures and illumination device comprising such luminescent structures
KR102252992B1 (ko) 2014-12-12 2021-05-20 삼성전자주식회사 반도체 발광소자 패키지의 제조 방법
WO2016098853A1 (ja) * 2014-12-19 2016-06-23 エルシード株式会社 発光素子
JP6834491B2 (ja) * 2015-01-21 2021-02-24 三菱ケミカル株式会社 焼結蛍光体、発光装置、照明装置、車両前照灯、及び焼結蛍光体の製造方法
JP5961740B1 (ja) * 2015-04-09 2016-08-02 エルシード株式会社 光学装置及び発光素子
US20160336482A1 (en) * 2015-05-12 2016-11-17 Epistar Corporation Light-emitting device
DE102015107586B4 (de) 2015-05-13 2023-10-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement
WO2017040433A1 (en) * 2015-08-28 2017-03-09 Osram Sylvania Inc. Laser-activated remote phosphor target and system
DE102016111442A1 (de) * 2016-06-22 2017-12-28 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle
TWI627768B (zh) * 2016-08-11 2018-06-21 國立中興大學 Modulation method of light-emitting band of light-emitting diode
US10319789B2 (en) * 2016-08-12 2019-06-11 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component and an optoelectronic component
US10886437B2 (en) 2016-11-03 2021-01-05 Lumileds Llc Devices and structures bonded by inorganic coating
JP6645486B2 (ja) * 2017-02-13 2020-02-14 日亜化学工業株式会社 発光装置およびその製造方法
JP6852463B2 (ja) * 2017-03-02 2021-03-31 信越化学工業株式会社 蛍光体レンズ及び発光装置
US10128419B1 (en) * 2017-08-03 2018-11-13 Lumileds Llc Method of manufacturing a light emitting device
KR102378919B1 (ko) * 2017-08-03 2022-03-28 루미레즈 엘엘씨 발광 디바이스를 제조하는 방법
DE102017220918A1 (de) * 2017-11-23 2019-05-23 Osram Gmbh Umwandlung von Primärlicht in Sekundärlicht mittels eines Wellenlängenkonverters
US20190198720A1 (en) 2017-12-22 2019-06-27 Lumileds Llc Particle systems and patterning for monolithic led arrays
WO2019179618A1 (en) * 2018-03-21 2019-09-26 Osram Opto Semiconductors Gmbh Optoelectronic device comprising a phosphor plate and method of manufacturing the same
US20200161506A1 (en) * 2018-11-21 2020-05-21 Osram Opto Semiconductors Gmbh Method for Producing a Ceramic Converter Element, Ceramic Converter Element, and Optoelectronic Component
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0514889A1 (en) * 1991-05-23 1992-11-25 Canon Kabushiki Kaisha Light-emitting device, optical recording printer head utilizing said device, and optical printer utilizing said optical recording head
GB2343549A (en) * 1998-11-06 2000-05-10 Hewlett Packard Co LED with silicone encapsulation
CN1289456A (zh) * 1998-11-30 2001-03-28 通用电气公司 含有磷光体组合物的发光器件
DE20209131U1 (de) * 2001-08-03 2002-10-17 Osram Opto Semiconductors Gmbh Hybrid-LED
DE10349038A1 (de) * 2002-10-22 2004-05-13 Osram Opto Semiconductors Gmbh Lichtquelle mit einer LED und einem Lumineszenzkonversionskörper und Verfahren zum Herstellen des Lumineszenzkonversionskörpers

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3103607A (en) 1963-09-10 Electroluminescent lamp with ceramic dielectric
US3153166A (en) 1960-08-05 1964-10-13 Westinghouse Electric Corp Electroluminescent device having connections on the base
JPS6196780A (ja) * 1984-10-17 1986-05-15 Stanley Electric Co Ltd Ｌｅｄチツプのコ−テイング方法
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
TW289837B (zh) * 1994-01-18 1996-11-01 Hwelett Packard Co
DE4425922B4 (de) 1994-07-21 2004-03-18 Siemens Ag Verfahren zur Herstellung einer Leuchtstoffkeramik durch Heißpressen
DE19506323A1 (de) 1995-02-23 1996-08-29 Siemens Ag Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
JPH09129922A (ja) * 1995-10-31 1997-05-16 Sanyo Electric Co Ltd 発光素子と発光素子の製造方法
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US5783477A (en) * 1996-09-20 1998-07-21 Hewlett-Packard Company Method for bonding compounds semiconductor wafers to create an ohmic interface
US5813752A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US5847507A (en) * 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
JP3955367B2 (ja) * 1997-09-30 2007-08-08 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 光半導体素子およびその製造方法
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
TW524786B (en) * 1998-01-23 2003-03-21 Du Pont Glass composition, castable dielectric composition and tape composition made therewith
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
CA2268997C (en) * 1998-05-05 2005-03-22 National Research Council Of Canada Quantum dot infrared photodetectors (qdip) and methods of making the same
JP3486345B2 (ja) 1998-07-14 2004-01-13 東芝電子エンジニアリング株式会社 半導体発光装置
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6373188B1 (en) 1998-12-22 2002-04-16 Honeywell International Inc. Efficient solid-state light emitting device with excited phosphors for producing a visible light output
US6273589B1 (en) * 1999-01-29 2001-08-14 Agilent Technologies, Inc. Solid state illumination source utilizing dichroic reflectors
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6680569B2 (en) * 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
US6351069B1 (en) * 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
US6177359B1 (en) * 1999-06-07 2001-01-23 Agilent Technologies, Inc. Method for detaching an epitaxial layer from one substrate and transferring it to another substrate
US6630691B1 (en) * 1999-09-27 2003-10-07 Lumileds Lighting U.S., Llc Light emitting diode device comprising a luminescent substrate that performs phosphor conversion
US6696703B2 (en) * 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
EP1142033A1 (en) * 1999-09-27 2001-10-10 LumiLeds Lighting U.S., LLC A light emitting diode device that produces white light by performing complete phosphor conversion
US6686691B1 (en) * 1999-09-27 2004-02-03 Lumileds Lighting, U.S., Llc Tri-color, white light LED lamps
JP2001127346A (ja) * 1999-10-22 2001-05-11 Stanley Electric Co Ltd 発光ダイオード
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
JP2001217461A (ja) * 2000-02-04 2001-08-10 Matsushita Electric Ind Co Ltd 複合発光素子
US6603258B1 (en) * 2000-04-24 2003-08-05 Lumileds Lighting, U.S. Llc Light emitting diode device that emits white light
US6501100B1 (en) * 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
US6526082B1 (en) * 2000-06-02 2003-02-25 Lumileds Lighting U.S., Llc P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
US6853663B2 (en) * 2000-06-02 2005-02-08 Agilent Technologies, Inc. Efficiency GaN-based light emitting devices
JP4207363B2 (ja) 2000-06-08 2009-01-14 日立電線株式会社 発光ダイオード
KR100869866B1 (ko) * 2000-06-29 2008-11-24 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 광전 소자 및 그 피복 방법
JP2002076445A (ja) * 2000-09-01 2002-03-15 Sanken Electric Co Ltd 半導体発光装置
JP2002141556A (ja) * 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP2002141559A (ja) * 2000-10-31 2002-05-17 Sanken Electric Co Ltd 発光半導体チップ組立体及び発光半導体リードフレーム
US6525335B1 (en) * 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
JP5110744B2 (ja) * 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 発光装置及びその製造方法
US6484499B2 (en) * 2001-01-05 2002-11-26 Caterpillar, Inc Twin variable nozzle turbine exhaust gas recirculation system
US6703780B2 (en) * 2001-01-16 2004-03-09 General Electric Company Organic electroluminescent device with a ceramic output coupler and method of making the same
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP2002289912A (ja) * 2001-03-26 2002-10-04 Canon Inc 面型発光素子、面型発光素子アレー、およびその製造方法
JP4153673B2 (ja) * 2001-03-29 2008-09-24 株式会社東芝 半導体素子の製造方法
JP2002293644A (ja) * 2001-03-29 2002-10-09 Citizen Watch Co Ltd 太陽電池用基板とその製造方法及びその太陽電池用基板を用いた太陽電池とその太陽電池を文字板に用いた太陽電池時計
US6417019B1 (en) * 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode
US6642652B2 (en) * 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US6576488B2 (en) * 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
JP2003017756A (ja) * 2001-06-28 2003-01-17 Toyoda Gosei Co Ltd 発光ダイオード
JP2003025299A (ja) 2001-07-11 2003-01-29 Hitachi Software Eng Co Ltd 半導体ナノ粒子及びその製造方法
TWI226139B (en) * 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
JP4122791B2 (ja) * 2002-02-14 2008-07-23 松下電工株式会社 発光装置
JP4158012B2 (ja) * 2002-03-06 2008-10-01 日本電気硝子株式会社 発光色変換部材
JP2003318447A (ja) 2002-04-24 2003-11-07 Toshiba Lighting & Technology Corp 発光ダイオードおよびｌｅｄ照明装置
JP2005524737A (ja) * 2002-05-06 2005-08-18 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 波長変換する反応性樹脂材料及び発光ダイオード素子
WO2003096387A2 (en) 2002-05-08 2003-11-20 Phoseon Technology, Inc. High efficiency solid-state light source and methods of use and manufacture
US6870311B2 (en) * 2002-06-07 2005-03-22 Lumileds Lighting U.S., Llc Light-emitting devices utilizing nanoparticles
WO2003107441A2 (en) * 2002-06-13 2003-12-24 Cree, Inc. Saturated phosphor solid emitter
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
JP2004200143A (ja) * 2002-08-08 2004-07-15 Matsushita Electric Ind Co Ltd 発光素子とその製造方法及びディスプレイデバイス
JP2004111514A (ja) * 2002-09-17 2004-04-08 Sanyo Electric Co Ltd 窒化物系半導体発光素子およびその製造方法
US6717353B1 (en) 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
JP4121551B2 (ja) * 2002-10-23 2008-07-23 信越半導体株式会社 発光素子の製造方法及び発光素子
US6900067B2 (en) * 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
JP2004253743A (ja) * 2003-02-21 2004-09-09 Nichia Chem Ind Ltd 付活剤を含有した基板を用いた発光装置
US20040173807A1 (en) * 2003-03-04 2004-09-09 Yongchi Tian Garnet phosphors, method of making the same, and application to semiconductor LED chips for manufacturing lighting devices
US6807211B1 (en) * 2003-05-27 2004-10-19 Eastman Kodak Company White-light laser
JP2005019981A (ja) * 2003-06-05 2005-01-20 Matsushita Electric Ind Co Ltd 蛍光体及び半導体発光素子、並びにこれらの製造方法
JP4374913B2 (ja) 2003-06-05 2009-12-02 日亜化学工業株式会社 発光装置
JP3890416B2 (ja) * 2003-08-19 2007-03-07 国立大学法人豊橋技術科学大学 窒化物半導体基板及びその製造方法
DE10351349A1 (de) * 2003-10-31 2005-06-16 Osram Opto Semiconductors Gmbh Verfahren zum Hestellen eines Lumineszenzdiodenchips
CN101019203B (zh) * 2004-05-17 2010-12-22 迈普尔平版印刷Ip有限公司 带电粒子束曝光系统
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7223998B2 (en) 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US7419839B2 (en) * 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7452737B2 (en) * 2004-11-15 2008-11-18 Philips Lumileds Lighting Company, Llc Molded lens over LED die
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0514889A1 (en) * 1991-05-23 1992-11-25 Canon Kabushiki Kaisha Light-emitting device, optical recording printer head utilizing said device, and optical printer utilizing said optical recording head
GB2343549A (en) * 1998-11-06 2000-05-10 Hewlett Packard Co LED with silicone encapsulation
CN1289456A (zh) * 1998-11-30 2001-03-28 通用电气公司 含有磷光体组合物的发光器件
DE20209131U1 (de) * 2001-08-03 2002-10-17 Osram Opto Semiconductors Gmbh Hybrid-LED
DE10349038A1 (de) * 2002-10-22 2004-05-13 Osram Opto Semiconductors Gmbh Lichtquelle mit einer LED und einem Lumineszenzkonversionskörper und Verfahren zum Herstellen des Lumineszenzkonversionskörpers

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