CN101174507A - 低损耗可调谐铁电器件及表征方法 - Google Patents

低损耗可调谐铁电器件及表征方法 Download PDF

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CN101174507A
CN101174507A CNA2006100988929A CN200610098892A CN101174507A CN 101174507 A CN101174507 A CN 101174507A CN A2006100988929 A CNA2006100988929 A CN A2006100988929A CN 200610098892 A CN200610098892 A CN 200610098892A CN 101174507 A CN101174507 A CN 101174507A
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capacitor
ferroelectric
loss
degrees centigrade
adjustable
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CN101174507B (zh
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斯坦利·斯拉夫科·通西赫
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Kyocera Corp
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Abstract

本发明公开了一种可调谐铁电元件(610－614)以及用于测量该铁电元件损耗的窄带谐振电路(610－620)。该铁电元件可以是集成在谐振电路中的电容器。测试方法消除其它来源的损耗，从而分离出由铁电材料引致的损耗，并且证实这种损耗是很低的。

Description

低损耗可调谐铁电器件及表征方法
本申请为2002年4月2日提交的、申请号为028107446、发明名称为“低损耗可调谐铁电器件及表征方法”的分案申请。
相关申请
本申请请求享有特此通过参照方式结合到本申请中的2001年4月11日提交的美国临时申请60/283,093的优先权权益。另外，本申请与特此通过参照方式结合到本申请中的2001年7月13日提交的美国申请“Tunable Ferro-electric Filter”(可调谐铁电滤波器)和2001年7月24日提交的美国申请“Tunable Ferro-electric Multiplexer”(可调谐铁电多路复用器)有关。
发明领域
本发明的发明领域是铁电体的可调谐的电子器件与电子元件。
发明背景
可变电容器的优点在于通过改变电容对应不同电容值可以得到不同的电子响应。但是，目前可变电容器或可调电容器的实现结构使其在性能上和实际使用中有着显著局限性。当可变电容器用于调谐收音机时，可移动平行板结构电容器体积大、有损耗、有噪声，通常只能在一个有限频段范围内工作，或者具有任何这类局限性。“损耗”元件或器件具有很高的插入损耗(IL)，插入损耗(IL)指元件消耗功率与传送给负载的功率的比值。电子变容二极管是一种电容随外加电压变化而变化的半导体器件。典型的变容二极管是有损耗、有噪声的，且因此通常不能有效应用于高频领域，尤其是高于200MHz的频率。因此，它们不适用于调谐那些插入损耗严重的器件，诸如在无线应用方面的过滤器和多路复用器，尤其在使用码分多址(CDMA)的情况下。另一种提供可变电容的实现手段是微电子机械系统(MEMS)。这是一种微型开关器件，它在物理上是根据外加信号来选择不同的电容器。但是，MEMS通常费用高昂，可靠性差，需要实际控制电压，并且只能提供一系列离散的预选电容值。
由于铁电材料的介电常数是可变的，所以铁电材料是制造可调电容器或其它可调谐元件的极好候选材料。但是，在目前使用的测量与表征技术条件下，无论如何利用加工技术、掺杂技术或其它制造技术改进可调谐铁电元件的损耗特性，可调谐铁电元件始终和实质地总是有损耗的。它们因此而无法得到广泛应用。人们发现在射频或微波区段工作的铁电可调谐元件损耗尤其大。例如，在雷达应用中的实践经验可以证实这一观察发现，传统的块状(厚度大于约1.0mm)铁电材料具有很高的射频或微波损耗，尤其当期望进行最大化调谐操作时。通常，除非采取改进(减小)损耗的处理步骤，大多数铁电材料都是有损耗的。这些步骤包括但不限于：(1)在沉积处理之前进行退火处理和在沉积处理之后进行退火处理或者在之前之后都进行退火处理，以便弥补O2的空缺，(2)使用过渡层以减小表面应力，(3)搀混或缓冲以其它材料以及(4)选择性掺杂。
近年来，在有限范围内对低功率元件进行调谐这样一种需要逐渐增大，人们的兴趣已经转向使用薄膜铁电材料而不再是块状铁电材料。但是，薄膜铁电材料仍继续面临着高铁电损耗的假定前提。传统的宽带测量技术支持了该假定前提，即，无论其是块状的还是薄膜形式的，可调谐铁电元件实质上都具有损耗。
典型地通过诸如LRC计、阻抗分析仪或网络分析仪之类的装置获得对铁电电容器电容值的宽带测量结果。通过功率测量结果，可以计算出电容器的损耗值。损耗值的倒数定义为品质因子(“Q”)。因此，损耗器件具有较小的Q值而较高功效的器件则具有较大的Q值。利用传统测量技术获得的电容在约0.5pF-1.0pF内、工作在1.8GHz-2.0GHz频率范围内的铁电电容器的Q测量值典型地应在10-50的范围内。效率如此之低是人们所无法接受的，并且因此人们认为铁电可调谐元件不适合广泛使用。例如，在无线通信中，在约2GHz的频率处要求Q大于80，优选地大于180，更优选地大于350。
如后面将要说明的那样，传统的铁电元件的制造、测量与表征是不恰当的。因此，人们通常都假定铁电可调谐元件损耗很大，其L-波段的Q值在10-50的范围内。铁电可调谐器件在其它波段也被认为Q值很小因而为大多数应用所不能接受。
发明内容
现有技术中，测试铁电膜的损耗或其倒数Q的方法是有缺陷的。现有技术方法通常使用宽带测试方法和非集成元件。通常没有全面考虑到测试方法与被测器件的全部损耗机理。这就使得研究者相信铁电材料是有损耗的。
本发明提供了窄带测试方法以及元件的集成化。它考虑到了全部损耗机理，并且加以消除或最小化减低。这就使得测试结果更加精确，结果表明有一些铁电材料的损耗比以前的预想得要小很多。
利用这种测试方法，可以成功地对铁电膜材料进行研究，以在损耗、可调谐性以及其它参数之间寻求理想的折衷。可以构造出低损耗可调谐的铁电器件。可以构造出一种低损耗的铁电可调电容器。这种电容器可以用作许多有可调谐性需要和低损耗需求的应用的构件块，这些应用的低损耗需求使得其它可调谐器件因无法满足要求而被排除。一个实例应用是在无线通信装置中。
附图的简要说明
通过研读附图可以部分地获知本发明在其结构和工作特性方面的详细内容，附图中相同附图标记指代相同的部分，在这些附图中：
图1是利用薄铁电膜制成的交叉指型电容器的俯视图；
图2是根据本发明所述的可调铁电间隙电容器的截面图；
图3的图表用于说明间隙宽度、铁电层厚度以及电容值之间的关系；
图4是根据本发明所述的铁电叠层电容器的俯视图。
图5是图4所示叠层电容器的局部放大视图。
图6示出了根据本发明所述的二阶窄带谐振测试电路；
图7是利用图6测试电路获取的数据与利用传统测试方法获取的数据的对比表；
图8是根据本发明所述的二阶窄带谐振测试电路的另一个实施例；
图9是根据本发明所述的单谐振器窄带测试电路；
图10a是根据本发明所述的单谐振器窄带测试电路的另一实施例的示意图；以及
图10b是图10a所示电路示意图的平面实现。
本发明的详细说明
本发明提供了使用窄带谐振电路的测试方法，所述窄带谐振电路精确测量并表征具有将要采用的拓扑结构并且在其将要应用的频率范围内的可调谐铁电元件的效率。这些测试方法与电路证实，可调谐铁电元件不像以前人们想象得那样损耗是均匀无变化的，并且证实将可调谐铁电元件用于低损耗应用与装置(诸如无线手机)中有很多优点。依据精确测定的损耗，可以对可调谐铁电元件进行正确的优化与设计。可以识别并消除特定的损耗机理，或者可以减少并限制这些特定损耗机理。
可调谐铁电元件，尤其是那些使用薄膜形式的可调谐铁电元件，可被应用在许多种频率捷变电路中。因为其具有元件尺寸与高度较小、插入损耗低或在相同插入损耗的情形下抑止特性较好、费用较低、以及能够在一个以上频带范围进行调谐等特性，所以可调谐元件是所期望的。可以覆盖多个频带的可调谐元件的能力有可能减少所需元件的数目，例如使用多路复用固定频率元件作为为在离散频带之间选频所需的开关元件。这些优点在无线手机设计方面意义尤为重要，在无线手机设计中既需要增强功能又需要降低造价和尺寸，从表面上看起来两者是相互矛盾的需求。例如，在CDMA手机中，独立元件的性能被着重强调。铁电材料还使得对迄今为止具有抗缩性的射频元件进行集成变为可能，诸如用于无线装置的天线接口单元(AIU)。
例如，AIU可以集成一个或多个可调谐的双工器(双频带无线通信装置中的US PCS和蜂窝)、同向双工器、功率放大器(PA)以及低噪声放大器(LNA)。对这些元件中的一些或者全部进行集成可以产生良好的效果，它们的总尺寸或体积或两者同时被缩小，而它们的电子性能则被提高。在本说明书后面部分将对可调谐铁电元件的其它应用进行阐述说明。
对任意电介质，铁电材料具有两种主要的损耗机理，即电导损耗和由电介质中晶格振动引致的阻尼损耗。这两种效应的组合称为该材料的损耗角正切(tan(δ))。当将铁电材料放在可调谐的射频或微波电路中进行考虑时，由于没有自由的电荷载流子，所以晶格振动导致的阻尼损耗占主导地位。但是，如果存在电导则任意测量tan(δ)的方法的测得结果都将包含有限的电导效应。这是因为当考虑射频/微波特性时，这两种机理的损耗效应难以区分。
电容器是射频电路中的主要元件。下面将就f-e电容器(即铁电电容器)讨论铁电可调谐性。无论是否可调谐，电容器的总损耗都由其品质因数(Q)给出，品质因数(Q)表示为其存储能量与消耗能量的比值，其中能量是存储在电场中而消耗在电阻上的。对于集总元件电容器，空载的Q(Qu)给出如下：
Qu＝X/Rs＝1/(ω*Rs*C)    (1)
其中ω＝角频率；Rs＝电容器的串联电阻；而C＝电容器的电容值。如果测得Rs且假定C和ω是已知的，则可以计算出Qu。串联电阻是由电导体以及电介质的消耗性损耗即tan(δ)引起的。
如果将可调电容器集成到谐振电路中，则系统的总Q(Qt)给出如下：
1/Qt＝1/Qc+1/Qd+1/Qr    (2)
其中Qc是电导体Q；Qd是电介质Q而Qr则是辐射Q。对于一个设计良好的、没有辐射的系统而言，不存在辐射损耗。因而，电导体损耗和电介质损耗确定了总损耗。电介质损耗是损耗角正切tan(δ)的作用效应，如果存在电导损耗的话则tan(δ)还包含有可归因于电介质的电导损耗。因此，对于空载的Q和总的Q而言，正确测量tan(δ)对于是否能够制造出具有可接受损耗特性的可调谐器件至关重要。
通常使用空腔谐振器方法测量材料的介电常数和损耗角正切值。但是由于所需空腔尺寸非常大，这些方法很难被实现，尤其在当蜂窝电话工作于较低微波频率(～2GHz)的情形下。将空腔谐振器方法用于铁电薄膜则面临更大的问题，因为测量由厚度在一个微米尺度范围内的结构引入空腔的扰动非常困难。潜在的误差可能非常大。
由于谐振器方法存在这种困难，所以通常使用交叉指型电容器(IDC)测量铁电薄膜的品质。图1示出了采用采用传统微带结构的铁电交叉指型电容器(IDC)100。交叉指型电容器100包括基底110、薄膜铁电层120、以及第一和第二导体130与140。交叉指型电容器典型地应用于诸如单片微波集成电路(MMIC)的应用中，并且应用于需要小台面(footprints)且电容在0.1-6pF范围内的应用中。在交叉指型电容器中，电容产生于该结构中的平行的线导体或指状导体之间。
基底110典型地由低损耗材料构成，例如像氧化镁(MgO)、蓝宝石或高纯铝之类的材料。选择基底要考虑到其固有的低损耗角正切值以及其不通过其它过渡层而接受直接沉积各种各样铁电膜的能力。在基底110上沉积薄的铁电膜120。铁电膜120典型地具有0.15-1.5微米的厚度。而后在铁电膜120上沉积形成导电层。有时候还需要粘附层。导电层优选地是金属材质的，诸如铜、金或银。这些金属的优点在于它们在室温下损耗相对较小。在本说明书中，室温指得是从-30℃到+85℃的温度范围，这一温度范围覆盖了大多数商用元件的典型工作温度范围。导电层典型地具有0.5-6.0微米的厚度范围，最通常的厚度范围为0.15-1.5微米。对厚度的需求是根据趋肤深度而改变的，而趋肤深度则是根据频率变化的而改变的。
虽然前面讨论的是薄的铁电料膜(tf-e小于约1.5μm)材料，但也可以使用厚的铁电膜材料。这里，“厚膜”被定义为tf-e大于约1.5μm且小于约1.0mm的膜。块(bulk)则大于约1.0mm。厚膜铁电材料的制造与应用迥然不同于薄膜铁电材料。其通常包括粘贴或溶胶-凝胶技术，以及使铁电材料形成显著的附加厚度。得到附加厚度且尤其使花费减少的代价是在一定程度上劣化了铁电性能，尤其是减低了可调谐特性。
然后利用深腐蚀或离地(lift-off)技术制造交叉指型电容器100以形成第一导体130和第二导体140。第一导体130具有指状部分132和间隔134，它们与第二导体140的指状部分142和间隔144接近。配置这些导体，以使第一导体130的指状部分132位于第二导体140的间隔144内，并使第二导体140的指状部分142位于第一导体130的间隔134内。迄今为止，在铁电膜制造与表征方面的许多研究人员以及其它专业人员已经设计出了宽度一般为1-5微米的指状部分、指状部分之间的间隙或间隔一般为1-5微米的交叉指型电容器。
电容主要产生于指状部分132和142之间。为了产生高级别电容，则需要小的间隙尺寸(＜5微米)及长的指状部分。当用作铁电调谐电容器时，小的间隙尺寸还有助于在指状部分之间生成一个大的调谐场(tuning field)。这样做是很重要的，因为大量的调谐场浪费在电容器100上的空气区域内。
这种结构配置中的最大损耗元件是在指状部分区域内生成的奇模(odd mode)内。平行导线之间的耦合可以用偶模(even mode)和奇模表示。当两条线都被同相(通常将相位设定为零)激励时产生偶模，而当两条线受到180度的不同相激励时则产生奇模。在微带电路中，偶模和奇模的传播速度不同。若使用薄的导电层(小于1.5微米)、窄的指状部分宽度与间隙间隔(任意一个或者两者都小于5微米)以及锐角转角，则损耗进一步增大。
通过交叉指型电容器测量铁电薄膜损耗的标准过程如下。如上所述，将约0.5微米厚的铁电膜沉积在诸如氧化镁那样的低损耗衬底上。然后，沉积厚度1微米或不到1微米的导电层，以制出尽具有最小可能尺寸的交叉指型电容器。指状部分的宽度和间隙间隔两者典型地都在1-5μm范围内。使用深腐蚀或离地(lift-back)技术以形成具有锐角转角的又窄又长的指状部分。最后得到的交叉指型电容器通过使用宽带测量工具诸如LRC计或者带有用以接触电容器的探针头的阻抗或网络分析仪而得到表征。
利用这个过程，得到0.2-1.5pF的电容器，其工作频率在从约500MHz到约2GHz范围内典型测得的Q值范围是10-100。这种损耗典型地完全归因于铁电膜。这个范围的Q值被认为是很低的，并且因此铁电可调谐元件通常被假定为高损耗且不能为许多应用所接受。例如，在无线通信应用方面，对于在2GHz左右频率下1.0pF附近的铁电电容器而言，需要Q大于100且优选地大于250。但是，如下面将要描述的那样，传统制造与损耗测量技术不能对可归因于铁电膜的实际损耗进行可靠的指示。
如公式(1)所示，在大的并联电阻对电容的分流效应忽略不计的射频(f＞约500MHz)处，电容器损耗(无论是否可调谐)正比于串联损耗Rs。电容器并不关心串联损耗的源是什么，而只关心是有一个源。例如，对于1pF的铁电可调电容器而言，若想在2GHz处得到可接受的低损耗(Qu＝250)，则串联损耗必须只有0.32Ω。串联损耗包括由在电容器使用过程中产生的各种来源的所有的损耗。为了减少或消除产生串联损耗的来源，必须首先解决存在的各种损耗机理。这将使得能够对仅仅归因于铁电膜的损耗进行更加精确的测量。
对于铁电器件，通过累加各种来源的损耗而得到总损耗，如下所示：
Lt＝Lgeom+Lattach+Lmetal+Lsub+Lrad+Lmeas+Lf-e；
其中Lgeom是由电容器的拓扑结构引起的，
Lattach是由器件固定引起的损耗，
Lmetal是总金属损耗，
Lsub是基底损耗(如果有的话)，
Lrad是辐射损耗，包含所期望的和非所期望的两部分，
Lmeas是由测量误差引起的总损耗，而
Lf-e是铁电损耗角正切。
这种损耗分配首先可以用于通过使用铁电电容器的方式而获取在所期望工作频率处的Lf-e(或铁电tanδ)的精确值。为了正确导出Lf-e，必须消除或抑制上述的所有其它损耗贡献来源。例如，Lgeom依据拓扑结构的不同而变化，叠层电容器的最小，间隙电容器的较差，而交叉指型电容器的则更差。尽管可以减少与控制这种损耗，但它是器件所固有的一种损耗。因此，为特定的铁电电容器选择的拓扑结构将会影响到该铁电电容器可能达到的最佳Qc值。假定铁电膜是无损耗的，则由电磁(EM)软件可以构建出所期望的拓扑结构的基线损耗。这种基线损耗表示特定拓扑结构的最佳(最低)损耗情形。
通常而言，间隙电容器最容易制造。制造IDC的容易度次之，而三者中叠层电容器的制造是最难的。与IDC相比，间隙电容器具有较好的Q但是其每单位截面(图1a中的W)的电容值较低。IDC的电容较大，这是因为在每单位截面上设置使用了许多个指状部分的缘故。但是，对于许多通信滤波器应用而言，并不需要大电容(C≥4.0pF)。因此，通常用间隙电容器就可以提供足够的电容。大多数铁电膜固有的k值很高，这有助于提供与传统的间隙电容器相比较高的单位截面(W)的电容。
Lattach是由分立器件的固定方法引起的，例如其包括焊接、银粉漆(silver paint)、或引线结合。这些固定损耗可能会很大并且不可预知。用铁电电容器制造谐振器或其它射频电路则损耗最小，因此即使不能排除不用这种损耗元件那也可以将损耗降低到最小。
单个独立的铁电电容器的固有损耗的作用影响很小。具有较大作用影响的是那些由将铁电电容器固定到电路上的固定方法所引起的附加损耗。即使铁电电容器是无损耗的，但如果使用了大损耗的连接方式，则整体效应体现为有损耗的铁电器件。例如，如果期望1.0pF电容在2.0GHz处Q≥250，则总串联电阻Rs必须≤0.32欧姆。因此任何附加的损耗都将会进一步减小这个电容器的Q值。这种附加的损耗是否来源于实际电容器之外是无关紧要的。既然是无法避免的损耗机理，例如像由安装引起的那类情形，则由于其对系统有作用影响因而使得电容器的Q值减小。
为了使附加损耗最小化，应当使铁电膜和谐振器之间的连接具有最小的附加电阻。这样，与铁电膜有关的电流、电荷将遭遇的附加损耗最小。传统的接合或安装方法，如(但不局限于)焊接、引线接合或银粉漆或粘贴，不具有这样的低损耗、可控制接合的特性。
这种附加的、不可预知的损耗是由于使用了这些结合方法而引起的，无论铁电电容器是否用于谐振器调谐或者用于表征铁电膜，这种附加的、不可预知的损耗都使实际的Q特性劣化。因此，为了获得最佳性能(损耗最小)，应当将铁电电容器的结构直接地制造到用于调谐的谐振器上或者与用于调谐的谐振器一起制造，或者制造到其它基本射频电路上。只有通过直接制造，电磁(EM)源(电流)由铁电调谐元件到谐振器的转移才可以损耗最小。通过减少锐角转角或急剧变化可以增强直接地制造到谐振器上或者与谐振器一起制造的铁电电容器的理想效应。
Lmetal的因子包括金属的表面粗糙度(SR)、金属厚度与趋肤深度δs之比，以及电导率。设若工作频率在L与S波段(1-4GHz)，则SR的均方根值(rms)小于约10微英寸就可以有效消除SR因子。设若金属厚度等于或大于1.5δs，就可以减小金属厚度因子；或者设若金属厚度≥5δs，就可以有效消除金属厚度因子。在用于电极接头时，金属厚度(tm)近似等于1.5δs。对于应用于电磁谐振器的情形，由于其中必须支持行波或驻波，即支持行波或驻波的金属明显延长且延长值相当于波长值的一小部分(约10％或更多)，所以金属厚度应当近似约为5δs或更大。
Au、Cu或Ag的电导率特性很好。因此，可以减小或控制Lmetal的大小，但不能消除电导率因子。但是，可以通过本领域普通技术人员公知的公式计算出电导率的作用效应，或者通过使用应用于通常使用的电路仿真器中的线性计算器工具，诸如Eagleware或Touchstone，计算出电导率的作用效应。而且，精确的制造控制可以将Lmetal中的几何变化量限定在一个特定范围内。
通过选择在感兴趣的工作频率上损耗角正切小于0.001，且优选地小于0.0005，的低损耗衬底可以将Lsub表示的损耗贡献作用减小到最小程度。合适的材料包括＞99％纯度的铝，目前这是损耗费用比的最佳选择。蓝宝石或MgO优于铝，因为它们具有更低的损耗角正切，但是它们更加昂贵。所有这些材料将能接纳多种铁电薄膜而不需要过渡层，并且具有可以接受认可的表面粗糙度，几乎不需要进一步的打磨抛光。半导体衬底是较差的选择，因为它们具有相对较高的电导率。除了损耗角正切、表面粗糙度和价格等因素之外，可以用不易破碎的适当衬底来制造足够大面积的晶片，并且可以很容易地喷涂金属而不需要大范围的预处理。
通过使用EM场或电路仿真软件可以成功地将Lsub从复合衬底(铁电膜加衬底)的总损耗中区分出来。例如，可以使用Sonnet、Momentum、或IE3D。因此，可以显著减小Lsub并且精确计算出Lsub。
通过适当屏蔽和设计可以消除Lrad，因此Lrad不是典型的损耗因子。应当注意，各种各样的过滤器，尤其是诸如梳形线式(combline)或发夹式那样的平面型过滤器，依靠辐射耦合以实现它们所需的性能。在这些情形中，应当肯定的是即使不能消除也要减小不希望要的、散射的耦合。
Lmeas可以显著增加电路的损耗误差，这是因为小的、附加的损耗使待测器件(DUT)或系统的测得Q值显著减小，从而偏离了DUT固有的Q值。测量材料中的介电常数与损耗角正切的传统方法是本领域普通技术人员众所周知的空腔扰动方法。但是，在L-波段，空腔的尺寸大小变得相当大。当表征具有≤1.5μm薄膜厚度的薄膜(与块相对)如铁电膜时，测量误差很大因此问题变得非常尖锐。而且，应当按照最接近于其适用本性的方式来表征铁电电容器(或过滤器)。因此，表征铁电化合物或铁电膜的优选途径是采用微带谐振器方法。
利用谐振电路进行测量，优选采用网络分析仪。为了将测量损耗减小到最小程度并且利用网络分析仪获取最精确的测量结果，应当对DUT的损耗进行校准，应当执行分析器的全程双端口校准，并且应当利用平均值进行校准与测量。
将器件固定损耗、衬底损耗、辐射损耗与测量误差损耗等成份进行最小化或消除之后，则总损耗变为：
Ltot＝Lgeom+Lmetal+Lf-e+ΔLmisc    (4)
Ltot是给定几何结构的铁电电容器的总损耗，而Lgeom和Lmetal是该几何结构的主要构成部分。它们的出现适合于确定特定器件的实际损耗，但是为了确定单独由铁电材料引起的损耗则可以对它们进行量化和去除。对采用无损耗铁电材料的电路进行精确的电磁仿真就可以确定Lgeom；而利用呈现有电导率、表面粗糙度(如果适用)和趋肤深度等项的金属损耗表达式就可以确定Lmetal。ΔLmisc表示对Lgeom和Lmetal进行限定抑制后仍不能完全去除的其它损耗机理的组合项。
这种两步处理法包括：(a)处理所有的损耗机理；以及(b)消除或限定这些损耗，不仅可以对铁电损耗进行精确测定，而且还有助于建立正确的低损耗可调谐元件设计指南。对Lf-e的正确认知使得人们可以首先确定所考虑的薄膜是否可以用于特定应用目的。对Lf-e的认知还可为各种类型采用铁电膜的优化设计提供必要的基线。这种认知对于有效地折中损耗角正切以换取可调谐性是必要的。简而言之，精确的制造与测量技术可导致铁电膜损耗表征的一致性。
基于这种损耗分析，低损耗可调谐铁电元件，且尤其是可调谐铁电电容器，可以被设计、测试并应用于许多方面。现在将在下面讨论基于这个损耗分析而设计应用的三种通用类型的电容器：(1)间隙电容器，(2)叠层电容器以及(3)交叉指型电容器。
图2中示出了一种铁电可调谐的间隙电容器200。间隙电容器200包括衬底层202、铁电层204和金属层206，金属层206限定出引致电容产生的间隙208。下面描述的设计实现过程使得由其它来源产生的损耗减低到最小程度，并且容许对由铁电膜204引起的损耗进行精确测定。尽管可以在其它波段应用同样的方法，但将无线手机的工作频率设定在L-波带(1-2GHz)。
在一个实施例中，衬底202是一层纯度为99.5％的铝，厚度范围是20-40mils(毫英寸)。表面粗糙度的均方根值应当小于或等于约5微英寸rms。铁电层204是一层钛酸钡锶BaxSr1-xTiO3(即BSTO)膜，其厚度范围是0.15-2.0微米。使用厚度＞1.0μm的膜可使电容与调谐范围达到最大。
优选选择掺杂或退火处理方法调整Ba/Sr分数，以便提供最小的tanδ同时提供所需的调谐范围。在一个例子中，x＝0.5(在BaxSr1-xTiO3中)以用于室温操作。也可以使用其它的铁电材料。金属层206的厚度约为2.5μm，这一厚度适于电极应用(electrode application)。间隙208的宽度为30-80mils，而边缘应当变圆，以使损耗得以最大程度的减小。间隙208在0伏特直流偏压作用下的电容范围是0.6pF至1.5pF。
EM仿真表明，对于2GHz下约为1pF的电容，假设损耗角正切为0.002则间隙电容器的Q＞700，或者假设损耗角正切为0.005则间隙电容器的Q＞300。图3的图表示出了间隙宽度、铁电层厚度与电容之间的关系。这种数据对间隙电容器测试电路的目标设计非常有用。图3中设定采用的铁电膜为0.5微米厚，在0V直流偏压下介电常数为1000，具有40mils厚的含有99.5％纯度铝的衬底层，并且铁电膜的损耗角正切为0.002。
图4示出了根据本发明所述的一种铁电叠层电容器300。电容器300包括衬底310；偏压衬垫(pad)层320；铁电层330；以及电容器衬垫层340。偏压衬垫层320定义了直流偏压衬垫，而电容器衬垫层340则定义了电容器衬垫342和隔直流电容器衬垫344。
在一个实施例中，基底310是铝制的，其厚度范围是20-40mils。偏压衬垫层320包括厚度约为2.0微米的银制基本电极层，银制基本电极层上覆盖了一层厚度约为100nm的铂。铂层防止在铁电层生长期间银层的氧化。层320具有用于连接0.5-1.0MΩ电阻的内置衬垫，该电阻用以提供直流偏压。如果需要，可以在铝层和银层之间插入薄(10nm)铬层以得到更好的粘附效果。铁电层330是一层BSTO薄膜，厚度约为1微米。电容器衬垫342具有的最小面积是8.0mil×4.0mil，并且覆盖有面积约为4.0mil×4.0mil的金制或银制的电极。隔直流电容器具有至少150-200pF的电容，并且面积约为100微米×100微米。接触衬垫344的总面积最小为7.0mils×8.0mils。
叠层电容器具有的最小电容在0.8-1.5pF范围内。图5是叠层电容器300的局部放大视图，如图5所示，电容器300的重叠区域350非常小。在一个实施例中，重叠区域350的尺寸大小是0.3mil×0.3mil。这是基于在0伏特直流作用下介电常数约为1000且薄膜厚度约为1.0微米的BSTO给出的。衬垫342和320沿朝着电容器重叠区域350的方向逐渐变窄。锥度在1.0mil距离上从4.0mils宽渐变为0.25mils。
对电容器300损耗的控制目标是在2.0GHz下电容为1.0pF时Q大于等于350。如果需要，通过掺杂、退火或应用一层或若干层过渡层则可以进一步优化铁电层330。最后，电容的改变与0-2.5伏特偏压的改变之比应当优选地为2∶1(50％)或更大。
本发明的一个方面是优化可调谐铁电元件的结构与设计标准，其中上述的电容器结构就是一个例子。本发明的另一个方面是用于精确表征可调谐铁电元件的损耗的测量方法与设备。这些方法涉及到使用谐振器和窄带谐振电路。因为被测器件设计用于窄频工作，所以应用窄带测量是合适的。窄带(谐振)测量是优选的，还因为它降低了损耗影响使得测量易于进行，并且窄带(谐振)测量使得测量结果更加精确。以前的方法曾有涉及到宽带测量的，但宽带测量对于窄带器件而言是不合适的并且测量结果不精确。下面将描述说明这些测试谐振电路的两个发明实施例：二阶窄带带通滤波器以及微带谐振器电路(半波或四分之一波)。
图6显示了谐振窄带测试电路400，它用于测试两个铁电电容器410和412。该电路是一个二阶平面梳形线滤波器(combline filter)。电容器410和412的结构参见图1和图2，并且其各种损耗分量被减低到了最小程度。测试电路400包括平面的二阶梳形线带通滤波器，并且包含两个谐振器402和404，谐振器402和404分别与铁电电容器410和412串联。对电容器410和412施加直流偏压。电容器410和412可以以集总元件形式制造并安装固定以进行测试，或者可以通过直接印制在衬底上的方式制造并安装固定以进行测试。隔直流电容器(电容等于约180pF)未示出。在集总结构配置中，电容器被焊接或者利用银粉漆或粘胶固定。但是，由于使用了各种各样的器件，就出现了由这种安装固定方法引起的增大了的且不可预知的损耗。在印制结构配置中，电容器是直接印制在衬底上的。印制的优点在于，它不需要焊接或粘合，并且由这种直接制造方式引起的损耗相比较小。但是，因为存在有铁电膜，所以可使用的衬底类型受到限制。隔直流电容器未在图中示出。
通过与网络分析仪相连的输入导线和输出导线406与408可以测量响应特性。测量谐振器中心频率f0的值，可以确定实际的电容器值(参见前面的公式(1))，而后由f0处的插入损耗可以确定电容器的Q值。在得到这些测量值之后，可以利用电路仿真以获取电容和Q值及比较结果。
为了演示说明使用本发明测试方法与使用传统测试方法相比所得测试结果的惊人不同，参见图7。图7的图表给出了从铁电交叉指型电容器样品获取的测量数据，该交叉指型电容器样品是由Washington DC的Naval Research Laboratory(NRL)(位于哥伦比亚特区华盛顿市的海军研究实验所)在与Kyocera Wireless Corporation(KWC-基奥赛拉无线公司)，即本发明的受让人，的合同约束下制造的。在NRL中利用传统测试方法(在这个实施例中，指使用HP4291B阻抗分析仪和Cascade Tech微波探头)所获得的交叉指型电容器样品的电容值和Q值被与在KWC中利用上述新测试方法从相同样品得到的测量结果进行了对比。
为了这个实验，制造的交叉指型电容器具有0.5-1.2pF的电容；间隙间隔约为5.0微米；指状部分宽度至少为150微米；铁电膜厚度约为0.5微米；金属厚度约为1.5-2.5微米；指状部分的长度小于或等于100微米。
KWC测试电路的结构形式类似于电路400。它是一个二阶平面切比雪夫(Chebychev)带通滤波器，其谐振频率大致为1800MHz。交叉指型电容器样品，集总元件电容器，是通过“倒装(flip-chip)法”安装并且利用银粉漆固定连接的。施加偏压用以校正典型的C1≠C2现象，其中C1和C2是两个梳形线带通滤波器的负载电容器，它们为滤波器的校正操作所必需。虽然希望C1等于C2，但实际上很少能实现C1＝C2。更多情形下C1≠C2，如果不加以校正(只要考虑重点仍是Q值测定)则将显著增大通带的插入损耗。
过去人们利用电容值在0.6-0.8pF范围内的高Q值ATC与AVX片状电容器来确定基线通带插入损耗。这些片状电容器在测试频率下的Q值范围是600-800。过去人们使用Eagleware电路仿真器测定在相同谐振频率和通带插入损耗条件下的交叉指型电容器的实际电容值和Q值作为测量数据。
图7中的数据实质上是最坏情况的Q数据，未做去除(校准)所有可能的损耗分量的努力尝试。一种这样的损耗分量包括接合(连接)损耗，各种导线和交叉指型电容器的接合(连接)损耗大小各不相同。其它这样的损耗分量有由此引起的谐振器长度失配；位于电容器之下的微带间隙开口端效应；以及由基本的交叉指型电容器的几何结构引起的损耗。这就导致了这样一种情形，使用本发明获取的Q值和使用传统方法获取的Q值之间的差别更加鲜明。例如用铝或MgO衬底来直接制造间隙电容而进一步减小或消除误差来源将只改进Q数据。
使用二阶带通滤波器作为窄带谐振测试电路具有若干优点。可以在工作频率下析取电容器数据。其拓扑结构简单、可重复再现且易于制造。其测量过程简单并且由于测量过程而引起的附加误差很小。其结果易于与仿真结果进行比对。应当注意它还存在若干缺点。在测量数据中表示上述的电容值差值的电压可显示作为增大的损耗。但是，对一个偏压进行小量调整就可以补偿这种差异。还有，杂散电容与耦合可以影响获取的f0和Q值。这些影响效应也可以通过EM场仿真器得到处理。铁电电容器的不均衡安装会导致两个谐振器的电长度(electrical lengths)有轻微差异，这种轻微差异直接叠加到铁电电容器的插入损耗不一致(I.L.misalignment)上还可导致附加损耗，以表现为低Q值。
图8显示了二阶带通谐振测试电路450的另一个实施例。测试电路450采用同轴谐振器可调谐滤波器形式，当然也可以使用其它谐振器，如整体式(monoblock)谐振器、带状线谐振器或微波传输带谐振器。还有，铁电电容器452与454可以是集总式的也可以是印制的。测试电路450还包括共轴的四分之一波长谐振器462与464。非铁电电容器470(C2)耦合在谐振器462与464之间，而非铁电电容器472与474(C1)则耦合在谐振器的外侧。这种基本结构是传统的固定调谐式二阶顶部电容耦合的带通滤波器(BPF)。
使用电路450的测量方法说明如下。首先测量不带有铁电电容器的BPF的性能，然后测量带有铁电电容器的BPF的性能。在第一种情况中，首先在无铁电电容器的条件下测量谐振器中心频率f01和滤波器的插入损耗IL1。在第二种情况中，在带有铁电电容器452与454的条件下测量谐振器中心频率f02和滤波器的插入损耗IL2。值得注意的是，只要谐振器442和444具有相同长度，则f01总是大于f02而IL2总是大于IL1。由f01-f02可以确定电容Cfe，而由IL2-IL1可以确定Q(Cfe)，与仿真相比具有更大精度。铁电电容器无需被增加到原始电路。当然，基本的顶部电容耦合BPF的构造可以不具有铁电电容器，而第二种BPF的构造直接具有铁电电容器。将铁电电容器直接制造到电路上，将导致可调谐测试电路的附加损耗减低到最小程度。
一种可供选择的测试电路包括在与铁电电容器一起使用时使用实际上更短的谐振器442与444。这将引致该BPF在与无铁电电容器的BPF相同或相近谐振频率处谐振。可以使用相同的铁电电容器的Q值析取方法。
二阶测试电路450与二阶测试电路400相比有一些优点。电路400和电路450本质上都是窄带结构，但是共轴谐振器462与464可以具有非常高的Q值，因此引起的插入损耗非常低。由于固有的屏蔽，所以电路450只包含非常小的杂散耦合。还有，与电路400一样，测试电路450不仅是一个测试电路而且在现实应用中可以用做带通滤波器。但是，电路450的制造与测试稍难一些。安装固定很重要并且由于增加了铁电电容器而导致产生由安装引起的额外损耗。通过将铁电电容器直接制造到用以实现C1与C2的相同电路上，而后制造铁电电容器之外的其它电路，藉此可以克服这种额外损耗问题。
通过使用单个的谐振器而不是使用两个谐振器可以进一步简化测试电路与方法。这可以消除电容器不匹配的问题。由此而得到的电路更加结实耐用，更加易于模拟并且减小了误差倾向性。注意，尽管图7显示的结果是交叉指型电容器的测试结果，但是也可以很好地使用间隙或叠层电容器的测试结果，因为它们都可以具有与交叉指型电容器相比较高的Q值。
图9显示的测试电路500包括具有最简单构造形式的间隙耦合微带谐振器。电路500包括低损耗衬底502和微带谐振器504，微带谐振器504与输入导线506被间隙508分隔开。铁电薄膜被沉积在间隙508中以形成铁电间隙电容器。因此，将谐振器604和间隙电容器制造为单一的集成结构。可选地，可以将铁电材料沉积在谐振器504下面，以构成可调谐谐振器。
衬底502应选用高品质、低损耗的衬底，诸如氧化镁，纯度大于99％的铝以及蓝宝石。衬底502还应当具有低的S.R.(低于5.0微英寸)。谐振器504可以是半波长的(开路的)谐振器或是四分之一波长的(短路的)谐振器。半波谐振器较长但易于制造，而四分之一波长谐振器较短但需要通路(via)。选择间隙508的宽度以接近临界耦合。
电容与Q的测量优选地使用网络分析仪。使用间隙电容的模型和金属损耗的表达式来析取电介质的Q，这个Q是基底的Q与铁电薄膜的Q的组合。因此，基底损耗之外的附加损耗指得就是铁电薄膜的损耗。最后，需要对测量数据进行适当分析以精确获取被测电容器的Q或损耗，正如在“Data Reduction Method for Q Measurements of Strip-LineResonators”，IEEE Transactions in MTT，S.Toncich和R.E.Collin，Vol.40，No.9，Sept.1992，pp.1833-1836(S.Toncich和R.E.Collin的“带状线谐振器Q值测量的数据处理方法”，《微波理论与技术》中的IEEE学报，第40卷，第9期，1992年9月，第1833-1836页)一文中所述的那样。该论文通过引用而包含在本文内。
现在，对参见图6-8所示的二阶窄带谐振测试方法与电路和参见图9所示的间隙耦合式单谐振器测试方法与电路进行比较是有意义的。间隙耦合式单谐振器的优点在于体积小，结构简单且非常容易制造。而且它还不需要对输入与输出电容器C1任何可能出现的失配进行调整。但是，其从衬底与耦合电容器的整体损耗中析取铁电损耗角正切非常困难。另一方面，二阶谐振电路除了作为测试电路之外还可以作为实际的器件。而且，很容易将测量数据与仿真数据或通过使用具有高Q值的非铁电电容器获取的数据进行比较。二阶谐振电路的缺点在于体积大，电路结构复杂，且为了将插入损耗减低到最小程度而需要对铁电电容器进行很多调谐操作。
图10a与10b示出了优选的窄带谐振测试电路600。电路600采用单谐振器带通滤波器的形式。参看图10a，图10a是电路600的原理图，电路600包括耦合到谐振器620的铁电电容器610。电容器630与640(C1)是输入电容器与输出电容器，将谐振器连接到测量仪器。
图10b是电路600的平面实现图。如图所示，电容器610和谐振器620被制作成一个集成元件。在低损耗衬底602上沉积形成铁电膜616。谐振器620和导电衬垫612被铁电膜616上的间隙614分隔开，以定义出铁电间隙电容器610。直流偏压施加到衬垫612，且可能包含偏置电阻625。隔直流电容器618连接在衬垫612和地之间。通过在衬底602上沉积与谐振器620间隔设置以形成电容间隙的导电带632与642，从而实现出电容器630与640。
在一个实施例中，衬底602是由纯度为99.5％的铝制成，并且具有约40mils的厚度和约为5.0微英寸的SR。铁电膜616厚度约为1.0μm，并且只沉积在间隙电容器610的区域内。微带612与620的厚度为4-6μm，两者间隔约10μm以形成了间隙614。通过选择谐振器620的长度，因此使得整个结构(电容器610和谐振器620)在所期望的频带内谐振。在一个实施例中，谐振器620是四分之一波长谐振器。如果期望或需要特定的谐振频率，则可以使用进一步的制造循环(fabrication cycles)以精微调谐谐振频率。
可将谐振器620配置为微带谐振器形式、同轴谐振器形式或带状线谐振器形式。优选的是平面微带构造形式，因为其易于从电路600中析取出电容值和Q值。使用集成元件结构(即，谐振器具有一体形成的间隙电容器，诸如谐振器620/电容器610)与使用分立的谐振器和集总元件电容器的结构形式相比具有优势，因为后者不可预知且难于测量由集总元件电容器所引起的损耗与误差，前者则消除了这些损耗与误差。
下面将说明使用诸如电路600那样的单谐振器带通测试电路的测试方法。首先，如上所述制造具有一体形成的间隙电容器的单谐振器带通滤波器测试电路。应当使用精确的薄膜制造与处理技术以保证得到理想的几何结构与特性。优选地，所使用技术的容限误差是±0.5微米。一旦将该电路制造完毕，就可以测量中心频率f0和插入损耗IL0。优选地，使用网络分析仪来获得测量结果，所述网络分析仪通过全程双端点校正以及使用平均算法来实现定标校正。
接下来，在诸如Sonnet、IE3D或Momentum的电磁场仿真工具上设计、分析该电路。一开始，仿真假设没有由铁电膜引起的损耗(即损耗角正切值为零)。然后通过调整在间隙区域内的铁电介电常数，以给定与测试电路中测量得到的中心频率值相同的中心频率f0。然后单独计算出铁电间隙电容器的IL0。然后在仿真过程中将该值用于处理与金属有关的损耗分量Lmetal。
接下来，执行另一次电路仿真，但是这次的损耗角正切值非零。在一个实施例中，损耗角正切值为0.003，并且重新计算IL0。继续执行这一迭代重复过程直至计算获取的IL0等于由测试电路测得的插入损耗IL0为止，由此得到该电路损耗角正切的非常精确的近似值，以及由被测试的特定结构(在这种情况下为间隙电容器)引起的损耗分量Lgeom的近似值。
通过制作不带有铁电膜的电路可以确定SR-BPF的基线性能。加载电容器610越小，则最终得到的谐振频率将越大。这一结果将提供SR-BPF的整体形状与频率响应的精确信息。
电路600不仅是测量由铁电间隙电容器所致损耗的精密机构，它还是低损耗可调谐滤波器的基本构件块，所述低损耗可调谐滤波器应用广泛，例如可以应用于无线手机。如本说明书所教导的窄带谐振电路可用于许多种元件(典型的如射频收发器)使其增强效率和增大可调谐性。其中可以实现本发明的射频元件包括但不局限于：双工器，隔离器，匹配电路，功率放大器，多路复用器，带通滤波器以及低噪声放大器。由于每一个元件都可以调谐，因此不需要为了适应多种频带模式而使用多个电路组块。如果有必要，可以以适当方式将谐振电路级联起来以构成所需的滤波器与系统，从而大大改进系统性能并降低费用和减小尺寸。典型无线手机的许多元件将受益于可调谐性的提高。
这里包含的文字描述与附图都是针对本发明的特定实施例的，并且是对本发明概括性主题的典型示例性说明。但是，本发明包括那些对本领域普通技术人员显而易见的其它实施例。因此，本发明的范围仅只由所附的权利要求书限定。

Claims (19)

1.一种可调谐铁电电容器，其包括：
第一导电表面；
第二导电表面，所述第一与第二导电表面构成一个电容器；
接近所述第一与第二导电表面的铁电材料；
与铁电材料耦合的可变电压的导线，其用于响应施加到所述可变电压导线上的电压而改变电容器的电容，所述电容器的电容响应于铁电材料的介电常数的改变而改变；
其中当电容器工作于-50摄氏度到100摄氏度温度范围内时，在0.25GHz-7.0GHz频率范围内电容器的品质因数Q大于80。
2.如权利要求1所述的可调谐铁电电容器，其特征在于，当工作温度范围是从-50摄氏度到100摄氏度时，在0.8GHz-7.0GHz频率范围内的所述品质因数大于80。
3.如权利要求1所述的可调谐铁电电容器，其特征在于，当工作温度范围是从-50摄氏度到100摄氏度时，在0.25GHz-2.5GHz频率范围内的所述品质因数大于80。
4.如权利要求1所述的可调谐铁电电容器，其特征在于，当工作温度范围是从-50摄氏度到100摄氏度时，在0.8GHz-2.5GHz频率范围内的所述品质因数大于80。
5.如权利要求1所述的可调谐铁电电容器，其特征在于，当工作温度范围是从-50摄氏度到100摄氏度时，在0.25GHz-7.0GHz频率范围内的所述品质因数大于180。
6.如权利要求1所述的可调谐铁电电容器，其特征在于，当工作温度范围是从-50摄氏度到100摄氏度时，在0.8GHz-2.5GHz频率范围内的所述品质因数大于180。
7.如权利要求1所述的可调谐铁电电容器，其特征在于，当工作温度范围是从-50摄氏度到100摄氏度时，在0.3pF-3.0pF范围内的电容的品质因数大于80。
8.如权利要求1所述的可调谐铁电电容器，其特征在于，当工作温度范围是从-50摄氏度到100摄氏度时，在0.5pF-1.0pF范围内的电容的品质因数大于80。
9.如权利要求1所述的可调谐铁电电容器，其特征在于，当工作温度范围是从-50摄氏度到100摄氏度时，在0.3pF-3.0pF范围内的电容的品质因数大于180。
10.如权利要求1所述的可调谐铁电电容器，其特征在于，当工作温度范围是从-50摄氏度到100摄氏度时，在0.5pF-1.0pF范围内的电容的品质因数大于180。
11.如权利要求1所述的可调谐铁电电容器，其特征在于，当施加到铁电材料上的电压为零时，电容器的电容为0.8-1.5pF。
12.如权利要求1所述的可调谐铁电电容器，其特征在于，所述铁电材料包括钛酸锶钡。
13.如权利要求1所述的可调谐铁电电容器，其特征在于，所述铁电材料是厚度为一个微米的薄膜。
14.如权利要求1所述的可调谐铁电电容器，其特征在于，所述电容器是微带间隙电容器。
15.如权利要求14所述的可调谐铁电电容器，其特征在于，所述第一导电表面和第二导电表面被2.5微米宽的间隙分隔开。
16.如权利要求1所述的可调谐铁电电容器，其特征在于，所述第一导电表面和第二导电表面是厚度范围在2-3微米之间的金属层。
17.如权利要求1所述的可调谐铁电电容器，其特征在于，所述电容器是叠层电容器。
18.如权利要求1所述的可调谐铁电电容器，其特征在于，所述第二导电表面包括金或银。
19.一种可调谐铁电叠层电容器，包括：
电容器衬垫层，其具有电容器衬垫部分、第一电容器部分以及第一锥形部分；
偏压衬垫层，其具有偏压衬垫部分、第二电容器部分以及第二锥形部分；及
铁电层，其位于所述第一电容器部分与所述第二电容器部分之间，
其中，所述第一和第二锥形部分在1.0mils的距离中从4.0mils锥形缩小至0.25mils。
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