|Publication number||CN101065512 B|
|Application number||CN 200580040817|
|Publication date||25 May 2011|
|Filing date||18 Nov 2005|
|Priority date||29 Nov 2004|
|Also published as||CN101065512A, US7572340, US7790229, US20060112884, US20090031957, WO2006057959A1|
|Publication number||200580040817.0, CN 101065512 B, CN 101065512B, CN 200580040817, CN-B-101065512, CN101065512 B, CN101065512B, CN200580040817, CN200580040817.0, PCT/2005/42137, PCT/US/2005/042137, PCT/US/2005/42137, PCT/US/5/042137, PCT/US/5/42137, PCT/US2005/042137, PCT/US2005/42137, PCT/US2005042137, PCT/US200542137, PCT/US5/042137, PCT/US5/42137, PCT/US5042137, PCT/US542137|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (10), Classifications (5), Legal Events (5)|
|External Links: SIPO, Espacenet|
高精度基材支架举升设备及方法 Precision substrate holder lifting apparatus and method
技术领域 Technical Field
 本发明大致上是有关于半导体制造，且特别是有关于一种用以达到形成在一基材上的一层次的一所希望厚度均勻性的方法与设备。  The present invention relates generally semiconductor manufacturing, and in particular relates to a method and apparatus have to be formed on a substrate to achieve a level of a desired thickness uniformity.
 制造现代半导体元件的主要步骤之一是通过气体化学反应形成一薄膜在一半导体基材上。  One of the main steps of the manufacturing of modern semiconductor element is a thin film formed by the chemical reaction of the gas on a semiconductor substrate. 这样的一沉积制程被称为化学气相沉积（CVD)。 Such a deposition process is called chemical vapor deposition (CVD). 传统的热CVD制程是供应反应性气体至基材表面，其中在该基材表面上热诱发化学反应会发生以产生所希望的薄膜。 Conventional thermal CVD processes supply reactive gases to the substrate surface, wherein the surface of the substrate to produce the desired heat-induced chemical reactions take place in the film. 等离子增强CVD制程通过施加射频（RF)能量至邻近基材表面的反应区域而促成了反应物气体的激化与/或分解，藉此产生一高反应性物种的等离子体。 Plasma enhanced CVD process by applying a radio frequency (RF) energy to a reaction zone near the substrate surface and contribute to the intensification of the reactant gas and / or decomposition, thereby generating a plasma of highly reactive species. 所被释放物种的高反应性降低了一化学反应发生所需要的能量，且因此记低了这样的CVD制程的所需要的温度。 The high reactivity of the released species reduces the energy of a chemical reaction required, and thus the low recorded temperature for such CVD processes required.
 在腔室内进行处理的期间，例如形成一层次在基材上，基材停置在一基材支撑件上。 During the processing chamber , for example, a hierarchy is formed on a substrate, the substrate parked on a substrate support member. 基材支撑件典型地为一基材加热器，该基材加热器在基材处理期间是支撑住且加热该基材。 Substrate support is typically a substrate heater, the substrate heater during substrate processing is to support live and heating the substrate. 基材停置于加热器表面上方，并且热被供给至基材底部。 Stop surface disposed above the substrate heater, and heat is supplied to the bottom of the substrate. 一些基材加热器是被电阻式地加热，例如通过电性加热构件，譬如位于加热器表面下方或被嵌入在具有加热表面的一平板内的电阻式线圈。 Some substrate heaters are resistance heated, e.g., by electrical heating means, such as surfaces located below or embedded within the heater having a heating surface of a flat resistive coil. 来自基材加热器的热在热驱动制程中为能量的主要来源，其中该热驱动制程是例如用以沉积包括有未掺杂硅玻璃（USG)、掺杂硅玻璃（譬如硼磷硅玻璃(BPSG))等等层次的热CVD。 The main source of heat from the substrate heater thermally driven process for energy, wherein the heat-driven process, for example, for depositing silicon glass comprising (USG) undoped, doped silicon glass (such as borophosphosilicate glass ( BPSG)) and so on level thermal CVD.
 基材支撑件典型地支撑住基材而相对于一气体分配面板，其中一反应物气体是被供给通过该面板而至腔室。  Typically, the substrate support relative to the substrate support to live a gas distribution panel in which a reactant gas is supplied by the panel and to the chamber. 面板为用以供给一或多种气体至腔室的气体分配构件的一零件。 Panel for supplying one or more gases to a gas distribution chamber member a part. 来自面板至基材的气体流影响形成在基材上层次的均勻性，例如层次的厚度。 Effect of gas flow from the panel to the substrate is formed on the substrate level uniformity, such as levels of thickness.
 本发明实施例是有关于调整介于基材支撑件与气体分配构件的面板之间的间距， 以达到形成在基材上的改善的层次的均勻性。  Embodiments of the present invention relates to adjust the spacing between the substrate between the support and the gas distribution member panel, formed on a substrate in order to achieve improved levels of uniformity. 基材支撑件与面板之间的间距影响了至基材表面的气体流与形成在基材表面上的层次的均勻性。 The spacing between the substrate support and the panel affect the flow of gas to the substrate surface formed on the substrate surface level of uniformity. 介于基材与面板之间的间距典型地约为0. 2吋。 Interposed between the substrate and the panel spacing is typically about 0.2 inches. 在一些制程中，基材是被置放成非常邻近于面板（例如距离0. 1吋或更少）以增加薄膜沉积速率。 In some processes, the substrate is placed very close to the panel (e.g. from 0.1 inch or less) to increase film deposition rate. 缩短间距使得薄膜厚度均勻性对于基材与面板之间的间距均勻性更为敏感。 Shortening the pitch so that the film thickness uniformity more sensitive to the uniformity of the spacing between the substrate and the faceplate.
 根据本发明一实施例，一种用于调整介于一腔室体与一升举板之间的一间距的装置，至少包含有将被装设至该腔室体的一装设螺栓的升举板。  provided according to an embodiment of the present invention, an embodiment, a method for adjusting a spacing between a chamber of the apparatus body and a lifting plate, comprising at least it is mounted to the chamber body bolts lifting plate. 该装设螺栓包括有一螺栓刻纹表面。 The mounting stud including a stud threaded surface. 一轴衬能够被固定至该升举板，并且包括有一轴衬刻纹表面。 A bushing can be fixed to the lifting plate, and includes a shaft lining threaded surface. 一调整螺丝具有第一刻纹表面与第二刻纹表面，其中该第一刻纹表面刻纹地卡合于该装设螺栓的该螺栓刻纹表面，该第二刻纹表面刻纹地卡合于该轴衬的该轴衬刻纹表面。 An adjusting screw having a first threaded surface and a second threaded surface, wherein the first threaded surface threadingly engaged with the mounting stud threaded surface of the bolt, the second threaded surface threadingly card close to the bushing threaded surface of the bushing. 当该轴衬被固定至该升举板且该调整螺丝被旋转时，该些刻纹表面是用以使得该调整螺丝相对于该装设螺栓以第一速率在第一方向移动且该轴衬相对于该调整螺丝以第二速率在第二方向移动，其中该第二方向是相反于该第一方向且该第二速率是不同于该第一速率。 When the bushing is fixed to the lift plate and the adjustment screw is turned, the more sculptured surface is used so that the adjustment screw bolt with respect to the installation of a first rate movement in a first direction and the bushing with respect to the adjustment screw at a second rate to move in a second direction, wherein the second direction is opposite to the first direction and the second rate is different from the first rate.
 根据本发明另一实施例，一种用于调整介于一腔室体与一升举板之间的一间距的方法，该方法至少包含将一装设螺栓设置至该腔室体。  In accordance with another embodiment of the invention, a method for adjusting a spacing between a chamber body and a lifting plate, which method comprises at least one mounting stud to the chamber body disposed . 该装设螺栓包括有一螺栓刻纹表面； 该方法更包含提供一调整螺丝，该调整螺丝具有第一刻纹表面，其中该第一刻纹表面刻纹地卡合于该装设螺栓的该螺栓刻纹表面；提供一轴衬，该轴衬具有一轴衬刻纹表面，其中该轴衬刻纹表面刻纹地卡合于该调整螺丝的第二刻纹表面；可移动地将该轴衬耦接至该升举板；以及通过将该调整螺丝旋转而进行该间距的粗糙调整，其中该调整螺丝相对于该装设螺栓旋转，而该轴衬是与该调整螺丝一起旋转。 The mounting stud including a stud threaded surface; the method further comprises providing an adjusting screw, the adjusting screw having a first threaded surface, wherein the first threaded surface threadingly engaged with the bolt of the mounting stud threaded surface; providing a bushing, the bushing having a threaded surface lining a shaft, wherein the bushing threaded surface threadingly engaged with the adjusting screw second threaded surface; movably the bushing coupled to the lifting plate; and by rotation of the adjustment screw to adjust the spacing of roughening, wherein the adjustment screw with respect to the mounting stud rotation, and the bushing is rotated together with the adjusting screw. 接着，将该轴衬固定至该升举板。 Next, the bushing is secured to the lifting plate. 该方法更包含通过将该调整螺丝旋转而进行该间距的精细调整，其中该调整螺丝相对于该装设螺栓旋转以将该调整螺丝相对于该装设螺栓以第一速率在第一方向移动，且该调整螺丝相对于该轴衬旋转以将该轴衬与该升举板相对于该调整螺丝以第二速率在第二方向移动，其中该轴衬是固定至该升举板，而其中该第二方向是相反于该第一方向且该第二速率是不同于该第一速率。 The method further comprising adjusting screw by rotating the fine adjustment of the spacing, wherein the adjusting screw with respect to the mounting stud is rotated to the adjusting screw with respect to the mounting stud at a first rate to move in a first direction, and the adjustment screw with respect to the bushing is rotated to the bushing and the lift plate relative to the adjusting screw at a second rate movement in the second direction, wherein the bushing is fixed to the lifting plate, and wherein the The second direction is opposite to the first direction and the second rate is different from the first rate.
附图说明 Brief Description
 本发明的前述目的、特征与优点将可由前述说明与所伴随的图式而更佳了解，其中：  The foregoing object of the present invention, features and advantages will be foregoing description and the accompanying drawings and a better understanding of which:
 图1为根据本发明一实施例的一基材支撑件的简化前视图，其显示出一高度调整机构；  Figure 1 is a simplified front view of an embodiment of the present invention a substrate support member, which exhibits a height adjusting mechanism;
 图2为图1的高度调整机构的部分侧视图，其显示出用于一测微计的沟槽；  FIG. 2 is a partial side view of the height adjustment mechanism 1, which shows a micrometer for a trench;
 图3为图1的高度调整机构的部分侧视图，其显示出用于量测高度调整的一测微计的使用；  FIG. 3 is a partial side view of the height adjustment mechanism 1, which shows the use of measurement for height adjustment of a micrometer;
 图4显示对于一半导体制程中，沉积速率（单位时间的厚度）对基材与面板之间的间距的作图；  Figure 4 shows that for a semiconductor manufacturing process, the deposition rate (thickness per unit time) of the distance between the substrate and the mapping panel;
 图5显示对于另一半导体制程中，沉积速率（单位时间的厚度）对基材与面板之间的间距的作图；  Figure 5 shows the semiconductor manufacturing process to another, the deposition rate (thickness per unit time) of the distance between the substrate and the mapping panel;
 图6为根据本发明一实施例的基材支撑件升举方法的流程图；  FIG. 6 is a flowchart of a method of lifting the substrate support member according to an embodiment of the present invention;
 图7为在一实例中形成在基材上的一层次的厚度图；  FIG. 7 is a thickness at a level on the substrate in a pattern forming example;
 图8为根据本发明一实施例的一高度调整装置的立体图，其中该高度调整装置被装设至一升举板；  FIG. 8 is a perspective view of a height adjusting device according to an embodiment of the present invention, wherein the height adjusting means is mounted to a leveling plate;
 图9为图8的高度调整装置的截面图；  FIG. 9 is a sectional view of the height adjusting apparatus of Figure 8;
 图10为图8的高度调整装置的一调整螺丝、一轴衬与一装设螺栓的截面图；  FIG 10 is a height adjustment means adjustment screw, a bushing provided with a cross-sectional view of the bolt;
 图11为图8的高度调整装置以球形垫圈被装设至升举板的立体图；  FIG. 11 is a height adjusting means is mounted to the spherical washer perspective view of the lifting plate 8;
 图12为图11所示高度调整装置的正视图；  FIG. 12 is shown in Figure 11 a front view of the height adjusting means;
 图13为图8的高度调整装置的立体图，其显示出用于将轴衬锁固至升举板的一锁固板；  FIG. 13 is a perspective view of the height adjustment device 8, which shows for locking the bushing to the leveling plate a locking plate;
 图14为图8的高度调整装置的立体图，其显示出用于将调整螺丝锁固至升举板的一锁固盖罩；  FIG. 14 is a perspective view of the height adjustment device 8, which shows that the adjustment screw is used to lift the locking plate a locking cover;
 图15为图8的高度调整装置的立体图，其显示出用于将调整螺丝锁固至升举板的一锁固盖罩的另一实施例，其中该锁固盖罩具有一锁固螺帽；以及  FIG. 15 is a perspective view of FIG. 8 height adjustment device, which shows for locking the adjustment screw to the leveling plate locking a cover of another embodiment, wherein the locking cap having a lock solid nut; and
 图16为一正视图，其显示出在图15的高度调整装置中锁固盖罩与锁固螺帽的使用。  FIG. 16 is a front view showing the height adjusting apparatus 15 in FIG locking cap and locking nut in use.
 主要元件符号说明  The main elements Symbol Description
 10基材支撑件  The substrate support member 10
 12制程腔室  The process chamber 12
 13 基材  13 base
 14基材支撑件表面  The substrate support surface 14
 16气体分配构件  16 gas distribution member
 18 轴  18 axis
 20支撑结构或毂  The support structure 20 or hub
 24促动器  The actuator 24
 28 托架  28 bracket
 30升举板  30 liters leveling plate
 34调整构件  34 adjustment member
 36参考表面或底部表面  The reference surface or the bottom surface 36
 40调整位置  40 to adjust the position
 50量测位置  50 measurement position
 54量测装置  54 measuring device
 58参考表面的末端 The end of  58 Reference surface
 60锁固螺帽  60 locking nuts
 102形成层次于位于基材支撑件上的基材上  102 is formed on a substrate level in support located on the substrate
 104于三量测位置处量测层次厚度  104 to measure the position of the three levels of thickness measured at the amount
 106计算三量测位置之间的厚度差异  106 calculates the difference in thickness between three measurement positions
 108将两量测位置与一参考量测位置之间的厚度差异除以沉积时间以获得沉积速率微分  108 to measure the thickness differences between the two positions with a reference measurement positions divided by the deposition time to obtain a deposition rate differential
 110使用一先前决定的关联因子而将沉积速率微分转换成在两量测位置处介于基材支撑件与面板之间的间距调整  110 uses a previously determined correlation factor and the deposition rate differential between the two converts the measurement position pitch adjustment between the substrate support and the panel
 112对于基材支撑件进行间距调整以改善将被形成在基材上的层次的均勻性  substrate support member 112 to be adjusted to improve the pitch will be formed on the substrate level uniformity
 200高度调整装置  200 height adjustment
 202装设螺栓  202 mounting stud
 204螺栓刻纹表面  204 stud threaded surface
 206 轴衬  206 bushing
 208轴衬刻纹表面  208 bushing threaded surface
 210调整螺丝  210 adjustment screw
 212第一刻纹表面  212 of the first threaded surface
 214第二刻纹表面  214 second threaded surface
 222球形垫圈  222 spherical washer
 2¾球形垫圈 226 开口  2¾ spherical washer  226 opening
 228放大凹处  228 enlarged recess
 230固持板或条  230 retention plates or strips
 270锁固盖罩  270 locking cap
 272 凹槽开口  272 recess opening
 274 沟槽  274 trench
 280锁固盖罩  280 locking cap
 282 开口  282 opening
 284 沟槽  284 trench
 286锁固螺帽  286 locking nut
具体实施方式 DETAILED DESCRIPTION
 如图1所示，一基材抓持件或支撑件10是被设置在一制程腔室12内，其中该制程腔室12是用以处理被置放在基材支撑件表面14上的基材13。  Figure 1, a substrate or support member gripping member 10 is disposed within a process chamber 12, wherein the process chamber 12 is used for processing the substrate is placed in the support surface 14 on the substrate 13. 一气体分配构件16是大致上被设置成相对于基材支撑表面14，其中该气体分配构件16典型地为具有用以导入气体的数个孔洞的一面板。 A gas distribution member 16 is arranged substantially with respect to the support surface of the substrate 14, wherein the gas distribution member 16, typically for introducing a gas having a plurality of orifices of a panel. 基材支撑件10包括有一轴18，该轴18被支撑在一支撑结构或毂20 上且可相对于毂20滑动以调整基材支撑件表面14与面板16之间的间距。 Substrate support 10 comprises a shaft 18, the shaft 18 is supported on a support structure or the hub 20 and the hub 20 relative to the slide to adjust the distance between the surface of the substrate support between 14 and panel 16. 毂20被设置于腔室12之外。 Hub 20 is disposed outside the chamber 12. 轴18是通过一促动器M而可垂直地移动。 The shaft 18 is movable vertically by means of a actuator M. 基材抓持件10的倾斜可以由毂20的倾斜来定义，这是因为其两者相互连接。 Inclined substrate gripping member 10 may be defined by the inclination of the hub 20, since it is both interconnected. 毂20连接至一托架观，该托架观是被设置于一升举构件或升举板30。 Hub 20 is connected to a bracket concept, the carrier concept is set to a lifting member or the lifting plate 30. 基材抓持件10的倾斜的调整是通过调整升举板的倾斜来达成。 The base member to adjust the inclination of the grip 10 is inclined by adjusting the lifting plate to achieve.
 升举板30大致上被设置成平行于基材支撑件表面14。  leveling plate 30 is disposed substantially parallel to the surface of the substrate support member 14. 至少两调整构件34与一连接构件（例如一球形轴承）被耦接在介于升举板30与一参考表面36之间。 At least two adjustment members 34 and a connecting member (e.g., a spherical bearing) are coupled between the leveling plate 36 between 30 liters and a reference surface. 在所显示的实施例中，参考表面36为腔室12的底部表面36，但是其可以为相对于面板16被固定住的其他表面。 In the embodiment shown, the reference surface 36 of the bottom surface 36 of the chamber 12, but it may be fixed with respect to the other surface of the panel 16 is live. 参考表面36可以大致上平行于面板16。 Reference surface 36 can be substantially parallel to the panel 16. 调整构件34是在数个调整位置40处被连接至升举板30，其中该些调整位置40是分布于升举板30上。 Adjustment member 34 is adjusted in a number of positions 40 is connected to the lifting plate 30, wherein the plurality of adjusting the position 40 is located in the lifting plate 30. 调整构件34是可以独立调整的以改变在调整位置40处升举板30与参考表面36之间的间距。 Adjustment member 34 can be independently adjusted to change in the adjustment position 40 liters lift plate 30 and the reference distance between the surface 36. 这会接着改变在数个对应调整位置42处介于基材支撑件表面14与面板16之间的间距，藉此调整了基材支撑件表面14相对于面板16的倾斜。 This will be followed by a corresponding change in the number of positions to adjust the spacing 42 between the surface of the substrate support between 14 and panel 16, thereby adjusting the tilt panel 16 relative to the substrate support surface 14. 在图1实施例中，基材支撑件表面14的对应调整位置42为大致上对齐于升举板30的调整位置40，这是因为升举板30是大致上平行于基材支撑件表面14。 In the embodiment of FIG. 1, a substrate support member 42 to adjust the position of the corresponding surface substantially aligned with the leveling plate 30 to adjust the position of 40 14, because the lifting plate 30 is substantially parallel to the surface of the substrate support member 14 . 在特定实施例中，对应调整位置42相对于基材支撑件表面14中心而均勻地分布于基材支撑件表面14周围。 In a particular embodiment, a corresponding adjustment of the position of the substrate 42 relative to the support surface 14 and the center 14 uniformly distributed around the substrate support surface.
 如图2所更详细显示者，升举板30包括有数个量测位置50以监控量测装置于量测升举板30与参考表面36之间的间距。  in Figure 2 are shown in more detail, the lifting plate 30 includes several measurement positions 50 to monitor the measuring device to measure the lifting plate spacing 36 between the 30 and the reference surface. 如图2与图3所示，量测位置50包括有用以装设量测装置M的沟槽，其中该量测装置M可以为测微计（micrometer)。 As shown in FIG. 2 and FIG. 3, the measurement position 50 comprises a useful measuring device M provided in the trench, wherein the measuring device M may be a micrometer (micrometer). 当调整升举板30 时，测微计M可以暂时地被装设在量测位置50，并且在调整结束后被移除。 When adjusting the lifting plate 30, micrometer M can be temporarily installed in the measurement position 50, and removed after the adjustment is completed. 典型地，每一量测位置50具有一对应量测位置40，并且每一量测位置50被设置于接近或邻近于对应量测位置40。 Typically, each measurement location 50 has a measuring position corresponding to 40, and each measurement location 50 is disposed proximate or adjacent to a corresponding measurement position 40. 例如，介于每一量测位置50与对应量测位置40之间的距离为实质上小于基材13 的直径（例如小于约基材直径的10% )。 For example, between the substrate 13 is substantially less than the diameter (e.g., less than about 10% of the base diameter) the distance between each of the measurement positions 40 and 50 corresponding to the measurement position. 在替代实施例中，量测位置50与调整位置40的数目与邻近性可以改变。 In an alternative embodiment, the measurement position 50 and the number 40 and adjust the position of proximity can be changed. 可以使用不同的量测技术。 You can use different measuring techniques.  每一调整构件34包括有调整螺丝，调整螺丝刻纹地耦接至升举板30且具有抵顶住制程腔室12的参考表面36的末端58。  Each adjustment member 34 includes adjustment screws, adjustment screws threadingly coupled to the leveling plate 30 and having a process chamber abutting against the reference surface 12 of the terminal 36 58. 一突出锁固螺帽60刻纹地耦接至每一调整螺丝34，且抵顶住升举板30的底部表面。 A prominent locking nut 60 threadingly coupled to each of the adjusting screw 34, and the lift plate abuts against the bottom surface 30. 另一突出锁固螺帽62亦可以被提供以刻纹地耦接至调整螺丝34且抵顶住升举板30的顶部表面。 Another highlight locking nut 62 can also be provided to threadingly coupled to the adjustment screw 34 and abuts against the top surface of the lift plate 30. 突出锁固螺帽较佳地提供了足够的微调以达到升举板30与基材支撑件表面14的倾斜调整的所希望精确性（例如调整约4密尔）。 Projecting locking nuts preferably provide sufficiently fine-tuned to achieve the lifting plate 30 and the inclined surface of the substrate support member 14 to adjust the desired accuracy (e.g., about 4 mils adjustment). 一Allren扳手或类似工具可被用以旋转该突出锁固螺帽以进行调整。 Allren a wrench or similar tool can be used to rotate the projecting locking nut to make adjustments. 当然，其他适当的调整机构可以被用于替代的实施例中。 Of course, other suitable adjustment mechanisms may be used in alternative embodiments.
 实验已经证明层次在一基材13上的沉积速率是与基材13及面板16之间的间距相关联，因此形成在基材13上层次的厚度均勻性可以通过改变基材支撑件表面14的倾斜来调整，其中基材13停置于该基材支撑件表面14上。  Experiments have shown that levels of deposition rate on a substrate 13 is associated with the base spacing 13 between the panel 16 and, thus formed on the substrate 13 levels of thickness uniformity by changing the substrate support member the inclined surface 14 is adjusted, wherein the substrate 13 stops placed on the substrate support surface 14. 图4与图5是显示出两组试验的实验结果。 Figures 4 and 5 show the experimental results of two tests.
 在图4中，改变基材与面板之间的间距而形成BPSG薄膜在基材上。  In Figure 4, changing the spacing between the substrate and the panel is formed on the BPSG film on the substrate. 薄膜是使用He、 TEOS, TEB、TEPO作为制程气体于约550°C温度与约200托耳压力而被形成。 The film is the use of He, TEOS, TEB, TEPO as the process gas at about 550 ° C. And about 200 Torr pressure is formed. 图4绘制出沉积速率(A /min)与间距(mils)的关系图。 Figure 4 plot the deposition rate (A / min) and the spacing (mils) of the diagram. 当间距增加时，沉积速率降低约27. 953 A / min，其为用以计算出对于特定制程的一关联因子的线的斜率。 When the distance increases, the deposition rate decreases to about 27. 953 A / min, which is used to calculate the specific manufacturing process for a correlation factor of the slope of the line.
 在图5中，改变基材与面板之间的间距而形成BPSG薄膜在基材上。  In FIG. 5, the change in the spacing between the substrate and the panel is formed on the BPSG film on the substrate. 薄膜是使用He、TEOS、TEB、TEPO作为制程气体于约550°C温度与约200托耳压力而被形成。 The film is the use of He, TEOS, TEB, TEPO as the process gas at about 550 ° C. And about 200 Torr pressure is formed. 当间距增加时，沉积速率降低约23. 169 A /min，其为用以计算出对于特定制程的一关联因子的线的斜率。 When the distance increases, the deposition rate decreases to about 23. 169 A / min, which is used to calculate the specific manufacturing process for a correlation factor of the slope of the line. 图4与图5的相当小差异是归因于升举机构的可变性、液体流变化、实验室温度等等。 Figures 4 and 5 is relatively small differences due to the lifting mechanism of variability, change fluid flow, temperature, etc. laboratory.
 根据沉积速率与基材及面板之间的间距的关联，以下将描述三点计算倾斜程序(three point counter-tilt)以调成基材支撑件表面的倾斜而改善均勻性，其中该关联是被建立用于牵涉的特定形式制程。  According to the spacing between the deposition rate associated with the base and the panel, the following three points will be described inclination calculation program (three point counter-tilt) to tune into the inclined surface of the substrate support to improve the uniformity, wherein the An association is being set up for a particular form of the process involved. 如图6的流程图100所示，在将基材支撑件定位于距离面板的一所希望间距之后，一层次形成于基材上（步骤10¾。在步骤104，量测层次厚度， 其可以在原位完成。图7显示一厚度图90的范例，该厚度图具有49个点以产生在基材上该层次的一厚度曲线。基材上三点92、94、96在位置上对应于升举板30上的三量测位置50以使用图3中测微计M来量测间距。该三点92、94、96典型地为接近基材边缘，且角度上相对于基材中心而大致上均勻地相隔开。例如，该三点92、94、96相对于基材中心隔开约120°，且每一者距离基材边缘有小于基材半径的10%的距离。 Shown, after the substrate support member positioned at a desired distance from the panel spacing, forming a hierarchy 100 in FIG. 6 is a flowchart of a substrate (step 10¾. In step 104, a thickness measurement level, which can be In situ complete. Figure 7 shows an example of a thickness of Fig. 90, the thickness map has 49 points to produce the level of a curve on the substrate thickness. 92,94,96 at three points on the substrate position corresponding to the rise Three measurement position 50 on the lift plate 30 in FIG. 3 using a micrometer to measure the distance M. The three 92,94,96 typically close to the edge of the substrate, and the angle with respect to the center of the substrate while substantially evenly spaced. For example, the center of the substrate relative to the three 92,94,96 spaced approximately 120 °, and each has a radius of less than 10% of the distance from the base edges of the substrate.
 请参阅图6，下一步骤106是计算该三点间的厚度差异。  Refer to Figure 6, the next step 106 is to calculate the difference in thickness between the three. 例如，点92是被选作为一参考位置，且计算参考点92与在剩下位置的其他点94、96之间的厚度差异。 For example, point 92 is selected as a reference position, and calculate the reference point 92 and the other 94, 96 points of difference between the thickness of the remaining positions. 在步骤108，厚度差异（点94与92之间及点96与92之间）通过沉积时间被分割以获得参考点92与剩下点94、96之间的沉积速率微分。 In order to obtain the reference point 92 and the rest of the deposition rate differential between points 94 and 96 in step 108, the thickness difference (between point 94 and point 92 between 96 and 92) is divided by the deposition time. 一先前决定的关联因子接着被用来将沉积速率微分转换成在剩下点94、96处之间距调整以改善均勻性（步骤110)。 Factors associated with a previously determined is then used to convert the deposition rate differential remaining 94, 96 at spaced points of adjustments to improve uniformity (step 110). 如果在剩下点的厚度大于在参考点92的厚度的话，则间距调整为正的以增加在剩下点处的基材支撑件与面板之间的间距。 If the point is greater than the thickness of the remaining thickness at the reference point 92, then the spacing adjustment is positive to increase the spacing between the remaining points of the substrate support member and the panel. 相反地，如果在剩下点的厚度小于在参考点92的厚度的话，则间距调整为负的以减少在剩下点处的基材支撑件与面板之间的间距。 Conversely, if the thickness is smaller than in the rest of the point 92 of the thickness of the reference point, then the spacing adjustment is negative to decrease the spacing between the remaining points of the substrate support member and the panel. 在步骤112，进行间距调整，且校正基材支撑件以对于所选择特定制程来形成改善均勻性的层次。 In step 112, where the pitch adjustment and correction of the substrate support with respect to the selection of a particular process to improve the uniformity of the level of form.
 关联因子正比于沉积速率对间距作图（如图4与图5)的斜率。  correlation factor proportional to the deposition rate on the pitch plotted (Figure 4 and Figure 5) slope. 亦即，关联因子正比于间距改变除以层次沉积厚度速率的比值。 That is, the correlation factor proportional to the pitch of the sediment thickness change rate divided by the level of the ratio. 典型地，关联因子将不等于斜率，但是将必须被修正以解释三点计算倾斜程序与间距调整之间的差异。 Typically, the association will not be equal to the slope factor, but would have to be modified to explain the three-point tilt calculate the difference between the program and the spacing adjustment. 为了获得图，基材向上或向下移动而不倾斜。 In order to obtain Figure, the substrate to move up or down without tilting. 然而，在三点计算倾斜程序中，在剩下点的其一者的间距相对于参考点被调整以将基材倾斜。 However, the inclination is calculated at three programs, at one point by a pitch relative to the rest of the reference point is adjusted to tilt the substrate. 因此，关联因子将等于一关联因子或常数乘以图斜率，其可以通过进行许多实验而经验性决定以获得关联因子而达到薄膜厚度均勻性。 Thus, the correlation factor equal to an associated factor or constant multiplied FIG slope, which can be carried out many experiments and empirical decided to get relevant factors to achieve film thickness uniformity.
 不同实验被进行以确定三点计算倾斜程序的重复性，以达到改善对于特定半导体制程形成在基材上层次的厚度均勻性。  Different experiments were performed to determine the three-point calculation process repeatability inclined, in order to achieve improved manufacturing process for a particular semiconductor substrate is formed at the level of thickness uniformity.
 图8与图9显示出用于在一特定位置处调整腔室体12与升举板30之间的间距的一高度调整装置200。  FIG. 8 and FIG. 9 shows the body 12 and a height adjusting means for adjusting a particular position of the chamber 30 between the leveling plate spacing of 200. 高度调整装置200提供了对于基材支撑件的高解析升举的粗糙的与精细的调整。 Height adjustment device 200 provides a substrate support member for lifting the high-resolution coarse and fine adjustment. 高度调整装置200能够根据本发明升举方案而被使用于任何至少两高度调整位置中。 Height adjustment device 200 can lift according to the present invention is used in any of at least two height adjustment positions. 在一特定实施例中，两高度调整装置200被用于两位置处，且具有一连接构件（例如一球形耦接件）的一相当简单的附件被提供在第三位置处。 A relatively simple attachments in a particular embodiment, two height adjusting means 200 is used for two-position and having a connecting member (e.g., a spherical coupling member) is provided at a third location.
 高度调整装置200包括有例如通过与腔室体12的一刻纹连接而设置在腔室体12 的一装设螺栓202。  The height adjustment device 200 includes, for example by lines connecting the chamber body moment 12 disposed in the chamber body 202 which carries 12 bolts. 装设螺栓202具有一螺栓刻纹表面204。 Mounting stud 202 has a stud threaded surface 204. 可被固定至升举板30的一轴衬206包括有一轴衬刻纹表面208。 A bushing may be secured to the lifting plate 30 206 includes a shaft 208 threaded surface lining. 一调整螺丝210具有刻纹地与螺栓刻纹表面204卡合的第一刻纹表面212，以及刻纹地与轴衬刻纹表面208卡合的第二刻纹表面214。 An adjusting screw 210 has sculptured with stud threaded surface 204 engages the first threaded surface 212, and sculptured with bushing threaded surface 208 engages the second threaded surface 214. 在第8_10 图所显示的实施例中，螺栓刻纹表面204为装设螺栓202的一外表面，轴衬刻纹表面208为轴衬206的一内表面，第一刻纹表面212为调整螺丝210的一凹处中的一内表面，并且第二刻纹表面214为调整螺丝210的一外表面。 In the first embodiment shown in FIG. 8_10, stud threaded surface 204 is provided in an outer surface of the bolt 202, bushing threaded surface 208 of a shaft 206 of the inner surface of the liner, a first threaded surface 212 of the adjustment screw a recess 210 in an inner surface, and a second threaded surface 214 is an outer surface of the adjustment screw 210. 一对球形垫圈222、2M被设置在介于轴衬206 与升举板30之间，如第9、11、12图中所示。 A spherical washer 222,2M is set, as shown in the interposed between the bushing 206 and the lifting plate 30 of 9,11,12 figure.
 当组装时，调整螺丝210延伸穿过升举板30的一开口226，其中该升举板30包括一放大凹处228以接收轴衬206与球形垫圈222、224，如图9所示。  When assembled, the adjustment screw 210 extending through the lifting plates 30 of an opening 226, wherein the leveling plate 30 includes an enlarged recess 228 to receive the spherical bushing 206 and a gasket 222, as shown in Figure 9 show. 一锁固盖罩270压迫球形垫圈222、224与轴衬206而抵住升举板30，并且调整螺丝刻纹地与轴衬206卡合且相对于轴衬206及升举板30为可移动的。 A locking cover 270 oppression spherical washer and bushing 222, 224 and 206 against the lifting plate 30 and the adjustment screw threadingly engaged with the bushing 206 and the bushing 206 and with respect to the leveling plate 30 is movable a. 对于粗糙的调整，调整螺丝相对于装设螺栓202被旋转，并且轴衬206是与螺丝210移动。 For coarse adjustment, the adjustment screw with respect to the mounting stud 202 is rotated, and the bushing 206 and the screw 210 is moved. 移动速率是由螺纹或每吋螺纹的转圈所决定，其中该螺纹是介于调整螺丝210的第一刻纹表面212与装设螺栓202的螺栓刻纹表面204之间的连接。 It is determined by the rate of movement of the thread or threads per inch of revolutions, wherein the thread is between the adjustment screw 210 of the first threaded surface 212 provided between the stud threaded surface of the connection 204 of the bolt 202. 在一实例中，刻纹连接每吋具有M螺纹，且移动速率为调整螺丝210相对于装设螺栓202的每一旋转为1Λ4吋。 In one example, with M marking thread per inch connector, and the rate of movement of the adjustment screw 210 with respect to the rotation of the bolt 202 provided for each 1Λ4 inches.
 在粗糙调整使得升举板能距离腔室体12在一所希望范围的间距内之后，即进行精细调整。  In the rough leveling plate can be adjusted so that the distance from the chamber after 12 within a desired range of spacing, that is fine-tuning. 为了预备调整装置以用于精细调整，轴衬206被锁固至升举板30。 To prepare adjustment means for fine-tuning the bushing 206 is locking to lift plate 30. 可以使用任何适当的锁固机构。 Any suitable locking mechanism. 在图13中，一固持构件（例如一固持板或条230)是接附至升举板30 的侧面以在轴衬206内锁固至升举板30。 In Fig. 13, a holding member (e.g., a retaining plate or bar 230) is attached to the side of the leveling plate 30 to lock the bushing 206 fixed to the leveling plate 30. 固持构件230抵顶住轴衬206的一平坦表面，用以避免其相对于升举板30旋转，且避免升举板30相对于调整螺丝210的侧至侧移动。 Holding member 230 abuts against the bushing a flat surface 206 to prevent relative to the lifting plate 30 is rotated, and avoid lifting plate 30 with respect to the adjustment screw 210 side to side movement. 固持构件230可以通过固定件（例如螺丝）而接附至升举板30。 Holding member 230 by fasteners (such as screws) and are attached to the lifting plate 30.
 由于调整螺丝210刻纹地耦接至装设螺栓202与轴衬206且被装设在至升举板30 (如图9与图13所示），则可以达到升举板30相对于腔室体12的精细调整（通过利用锁固盖罩270或类似构件)。  As the adjustment screw 210 threadingly coupled to the mounting stud 202 and the bushing 206 and is mounted to the lift plate 30 (FIG. 9 and FIG. 13), you can achieve the lifting plate 30 relative fine-tuning the chamber body 12 (through the use of locking cap 270 or similar means). 当调整螺丝210旋转时（例如顺时钟方向），调整螺丝210经由介于调整螺丝210的第一刻纹表面212与装设螺栓202的螺栓刻纹表面204之间的刻纹连接，而相对于装设螺栓202在第一方向移动（例如图9中的向上方向）。 When the adjustment screw 210 is rotated (eg, clockwise), the adjustment screw 210 204 engravings connection is between the adjustment screw threaded surface 210 of the first threaded surface 212 via bolt mounting stud 202, and with respect to mounting stud 202 moves (e.g. upward direction in FIG. 9) in a first direction. 同时，轴衬206 与升举板30经由调整螺丝210的第二刻纹表面214与轴衬206的轴衬刻纹表面208之间的刻纹连接，而相对于调整螺丝20在第二方向移动（例如向下方向），其中第二方向是相反于第一方向。 Meanwhile, the bushing 206 and the lifting plate 30 via the adjustment screw threaded surface 210 of second bushing 214 and bushing threaded surface marking 208 is connected between the 206, but relative to the adjusting screw 20 moves in a second direction (e.g., downward direction), wherein the second direction is opposite to the first direction. 调整螺丝210相对于装设螺栓202以第一速率（例如对于每吋M螺纹的一刻纹连接为每转1Λ4吋）在第一方向移动。 Adjustment screw 210 (turn 1Λ4 per inch groove connection for example, the moment M threads per inch is) moving relative to the mounting stud 202 at a first rate in a first direction. 轴衬206与升举板30相对于调整螺丝210 以第二速率在第二方向移动。 Bushing 206 and the lifting plate 30 with respect to the adjustment screw 210 at a second rate to move in a second direction. 在实例中，调整螺丝210与轴衬206之间的刻纹连接每吋具有观螺纹，使得移动于每转1/¾吋的第二速率。 In the example, the adjustment screw between the bushing 210 and 206 engravings connection with a concept of threads per inch, making the move to per revolution 1 / ¾ inch second rate. 移动的净速率为第一速率与第二速率的差异，即每转1/M-1/28吋，为每转0.006吋在第一方向移动（向上方向）。 Mobile net rate difference between the first rate and the second rate per revolution 1 / M-1/28 inch, 0.006 inch per revolution movement (upward direction) in a first direction. 移动于相反方向可以通过将调整螺丝210旋转于相反方向（例如逆时钟方向）来达到。 It moved in the opposite direction by the adjustment screw 210 in the opposite rotational direction (e.g., counterclockwise direction) to reach. 该两刻纹连接的高解析度移动可以使升举板30相对于腔室体12精细调整。 High resolution moving the two sculptured connection allows lifting plate 30 with respect to the chamber 12 fine adjustment. 球形垫圈222、2M补足了升举板30相对于腔室体12的任何不当对准。 Spherical washer 222,2M complements the lifting plate 30 with respect to any improper alignment of the chamber body 12.
 在所希望的精细调整完成后，高度调整装置200则被锁固于固定位置。  After the desired fine adjustment of the height adjustment device 200 were locking in a fixed position. 可以使用许多适当的锁固机构。 You can use many suitable locking mechanism. 第8、9、14图显示了锁固盖罩270的使用，其中该锁固盖罩270是耦接于调整螺丝210与升举板30。 The first figure shows 8,9,14 locking cap 270 used in which the locking cap 270 is coupled to the adjustment screw 210 and the lifting plate 30. 锁固盖罩270包括有一凹槽开口272，其中该凹槽开口272 是卡合或紧密配合于调整螺丝210之外表面。 Locking cover 270 includes a recess opening 272, wherein the recess is engaged with the opening 272 or mate with the adjustment screw 210 outside surface. 锁固盖罩270更包括有一对沟槽274，固定件可以被使用而穿过沟槽274以将锁固盖罩270固定至升举板30。 Locking cap 270 further includes a pair of grooves 274, the fixing member may be locking the cover 270 is fixed to the leveling plate 30 and through the groove 274 in use. 这样的一锁固机构将调整螺丝210锁固至升举板30，且避免了调整螺丝210相对于升举板30的旋转。 Such a locking mechanism for locking the adjustment screw 210 to lift plate 30, and to avoid the adjustment screw 210 rotating lifting plate 30 with respect. 在图15与图16所显示的另一实施例中，锁固盖罩280具有一开口282与一对沟槽观4，其中该开口282没有紧密地配合于调整螺丝210周围（例如一圆形开口）。 In another 15 shown in Fig. 16 embodiment, the locking cap 280 has an opening 282 and a pair of grooves Concept 4, wherein the opening 282 does not fit tightly around the screw 210 to adjust (e.g., a circular opening). 锁固盖罩280被设置在轴衬206与升举板30的一侧上，且一锁固螺帽286被设置在轴衬206与升举板30的另一相反侧上。 Locking cover 280 is provided on the side of the bushing 206 and the lifting plate 30, and a locking nut 286 is provided on the bushing 206 and another 30 on the opposite side lifting plate. 锁固盖罩观0自一侧将轴衬206抵顶住升举板30，且锁固螺帽286刻纹地耦接于调整螺丝210以自相反侧刻纹地抵顶住升举板30，藉此将轴衬206与调整螺丝210锁固抵住升举板30而避免调整螺丝210旋转。 View 0 locking the cover from the side of the bushing 206 abuts against the lifting plate 30, and the locking nut 286 threadingly coupled to the adjustment screw 210 from abutting against the opposite side of the sculptured lifting plate 30 whereby the bushing 206 and the adjustment screw 210 locking against lifting plate 30 and avoid the adjustment screw 210 is rotated.
 前述设备与方法仅是为了说明本发明原理与其他实施例之用，在不脱离权利要求所定义的本发明精神与范围下是可以进行变更的。  the aforementioned apparatus and methods are merely illustrative of the principles of the present invention is the use case of the other embodiments, in the spirit and scope of the invention defined by the claims without departing from that can be changed. 例如，调整螺丝与装设螺栓上的刻纹表面可以被建构成在不同的内表面与外表面为不同的。 For example, the adjustment screw and bolt threaded surface installations can be built in different constituting the inner surface and an outer surface is different. 因此，本发明范围不应该通过参照前述说明而来决定，而是应该参照权利要求与其均等物范围而加以决定。 Accordingly, the scope of the present invention should not be decided by reference to the foregoing description comes, but should rather be determined by reference to the scope of claims and their equivalents.
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