|Publication number||CN101065512 A|
|Application number||CN 200580040817|
|Publication date||31 Oct 2007|
|Filing date||18 Nov 2005|
|Priority date||29 Nov 2004|
|Also published as||CN101065512B, US7572340, US7790229, US20060112884, US20090031957, WO2006057959A1|
|Publication number||200580040817.0, CN 101065512 A, CN 101065512A, CN 200580040817, CN-A-101065512, CN101065512 A, CN101065512A, CN200580040817, CN200580040817.0, PCT/2005/42137, PCT/US/2005/042137, PCT/US/2005/42137, PCT/US/5/042137, PCT/US/5/42137, PCT/US2005/042137, PCT/US2005/42137, PCT/US2005042137, PCT/US200542137, PCT/US5/042137, PCT/US5/42137, PCT/US5042137, PCT/US542137|
|Export Citation||BiBTeX, EndNote, RefMan|
|Referenced by (2), Classifications (5), Legal Events (5)|
|External Links: SIPO, Espacenet|
本发明大致上是有关于半导体制造，且特别是有关于一种用以达到形成在一基材上的一层次的一所希望厚度均匀性的方法与设备。 The present invention generally relates to semiconductor manufacturing, and in particular relates to an apparatus for forming on a substrate to achieve a desired level of thickness of a method and apparatus for uniformity.
制造现代半导体元件的主要步骤之一是通过气体化学反应形成一薄膜在一半导体基材上。 One of the main steps of manufacturing a semiconductor device by modern gas chemical reaction forming a thin film on a semiconductor substrate. 这样的一沉积制程被称为化学气相沉积(CVD)。 Such a deposition process is called chemical vapor deposition (CVD). 传统的热CVD制程是供应反应性气体至基材表面，其中在该基材表面上热诱发化学反应会发生以产生所希望的薄膜。 Conventional thermal CVD processes supply reactive gases to the substrate surface, wherein on the substrate surface to produce the desired heat-induced chemical reactions of the film occurs. 等离子增强CVD制程通过施加射频(RF)能量至邻近基材表面的反应区域而促成了反应物气体的激化与/或分解，藉此产生一高反应性物种的等离子体。 Plasma enhanced CVD process by applying a radio frequency (RF) energy to a reaction zone near the substrate surface and led to the intensification of the reactant gas and / or decomposition, thereby producing a highly reactive plasma species. 所被释放物种的高反应性降低了一化学反应发生所需要的能量，且因此记低了这样的CVD制程的所需要的温度。 The high reactivity of the released species reduces the energy of a chemical reaction required, and thus the temperature of such low mind CVD processes are required.
在腔室内进行处理的期间，例如形成一层次在基材上，基材停置在一基材支撑件上。 During the processing chamber, e.g. on a substrate to form a level, the substrate parked on a substrate support member. 基材支撑件典型地为一基材加热器，该基材加热器在基材处理期间是支撑住且加热该基材。 Substrate support typically is a substrate heater, the substrate heater during substrate processing is the prop and heating the substrate. 基材停置于加热器表面上方，并且热被供给至基材底部。 A substrate heater disposed above the stop surface, and heat is supplied to the bottom of the substrate. 一些基材加热器是被电阻式地加热，例如通过电性加热构件，譬如位于加热器表面下方或被嵌入在具有加热表面的一平板内的电阻式线圈。 Some substrate heaters are resistance heated, e.g., by electrical heating means, for example located below the heater surface or embedded in the surface of a flat plate having a heated resistive coil. 来自基材加热器的热在热驱动制程中为能量的主要来源，其中该热驱动制程是例如用以沉积包括有未掺杂硅玻璃(USG)、掺杂硅玻璃(譬如硼磷硅玻璃(BPSG))等等层次的热CVD。 The main source of heat from the substrate heater in the manufacturing process for the thermal driving energy, wherein the heat-driven processes, for example, for depositing silicon glass comprising (USG) undoped, doped silicon glass (such as borophosphosilicate glass ( BPSG)), and so the heat levels CVD.
基材支撑件典型地支撑住基材而相对于一气体分配面板，其中一反应物气体是被供给通过该面板而至腔室。 Typically, the substrate support member supporting the substrate with respect to a live gas distribution panel in which a reactant gas is supplied by the panel and to the chamber. 面板为用以供给一或多种气体至腔室的气体分配构件的一零件。 Panel for supplying one or more gases to the chamber of the gas distribution member of a part. 来自面板至基材的气体流影响形成在基材上层次的均匀性，例如层次的厚度。 Effect of gas flow to the substrate is formed from the panel in the level of uniformity of the substrate, such as levels of thickness.
本发明实施例是有关于调整介于基材支撑件与气体分配构件的面板之间的间距，以达到形成在基材上的改善的层次的均匀性。 Embodiments of the present invention relates to adjustment of the spacing between the panels between the substrate support member and the gas distribution member is formed on the substrate in order to achieve an improved level of uniformity. 基材支撑件与面板之间的间距影响了至基材表面的气体流与形成在基材表面上的层次的均匀性。 The spacing between the substrate support member and the panel to affect the gas flow and the substrate surface is formed on the substrate surface level of uniformity. 介于基材与面板之间的间距典型地约为0.2吋。 Typically, the spacing between the substrate and the panel between about 0.2 inches. 在一些制程中，基材是被置放成非常邻近于面板(例如距离0.1吋或更少)以增加薄膜沉积速率。 In some processes, the substrate is placed very close to the panel (e.g., from 0.1 inches or less) to increase film deposition rate. 缩短间距使得薄膜厚度均匀性对于基材与面板之间的间距均匀性更为敏感。 Shortening the pitch such that the film thickness uniformity more sensitive to the uniformity of spacing between the substrate and the faceplate.
根据本发明一实施例，一种用于调整介于一腔室体与一升举板之间的一间距的装置，至少包含有将被装设至该腔室体的一装设螺栓的升举板。 According to an embodiment of the invention, a method for adjusting a spacing between a chamber body and means a lifting plate, comprising at least have to be mounted to a mounting stud to the chamber body liter For board. 该装设螺栓包括有一螺栓刻纹表面。 The installation includes a bolt bolt threaded surface. 一轴衬能够被固定至该升举板，并且包括有一轴衬刻纹表面。 A bushing capable of being fixed to the leveling plate, and includes a bushing threaded surface of the shaft. 一调整螺丝具有第一刻纹表面与第二刻纹表面，其中该第一刻纹表面刻纹地卡合于该装设螺栓的该螺栓刻纹表面，该第二刻纹表面刻纹地卡合于该轴衬的该轴衬刻纹表面。 An adjustment screw having a first threaded surface with a second threaded surface, wherein the first threaded surface threadingly engaged with the mounting stud of the stud threaded surface, the second threaded surface threadingly card close to the bushing of the bushing sculptured surfaces. 当该轴衬被固定至该升举板且该调整螺丝被旋转时，该些刻纹表面是用以使得该调整螺丝相对于该装设螺栓以第一速率在第一方向移动且该轴衬相对于该调整螺丝以第二速率在第二方向移动，其中该第二方向是相反于该第一方向且该第二速率是不同于该第一速率。 When the bushing is fixed to the leveling plate and the adjustment screw is rotated, the threaded surface is used so that some of the adjustment screw with respect to the mounting stud at a first rate in a first direction and movement of the bushing with respect to the adjustment screw at a second rate of movement in a second direction, wherein the second direction is opposite to the first direction and the second rate is different from the first rate.
根据本发明另一实施例，一种用于调整介于一腔室体与一升举板之间的一间距的方法，该方法至少包含将一装设螺栓设置至该腔室体。 According to another embodiment of the invention, a method for adjusting a spacing between a chamber body and a leveling plate between, which method comprises setting at least one mounting stud to the chamber body. 该装设螺栓包括有一螺栓刻纹表面；该方法更包含提供一调整螺丝，该调整螺丝具有第一刻纹表面，其中该第一刻纹表面刻纹地卡合于该装设螺栓的该螺栓刻纹表面；提供一轴衬，该轴衬具有一轴衬刻纹表面，其中该轴衬刻纹表面刻纹地卡合于该调整螺丝的第二刻纹表面；可移动地将该轴衬耦接至该升举板；以及通过将该调整螺丝旋转而进行该间距的粗糙调整，其中该调整螺丝相对于该装设螺栓旋转，而该轴衬是与该调整螺丝一起旋转。 The installation includes a bolt bolt threaded surface; the method further comprises providing an adjustment screw, the adjusting screw has a first threaded surface, wherein the first threaded surface threadingly engaged with the installation of the bolt bolt threaded surface; providing a bushing, the bushing having a bushing threaded surface of a shaft, wherein the bushing threaded surface threadingly engaged with the adjustment screw a second threaded surface; the bushing movably coupled to the leveling plate; and by rotating the adjustment screw to adjust the pitch is roughened, wherein the adjusting screw rotating relative to the mounting stud, and the bushing is rotated together with the adjusting screw. 接着，将该轴衬固定至该升举板。 Then, the bushing is fixed to the leveling plate. 该方法更包含通过将该调整螺丝旋转而进行该间距的精细调整，其中该调整螺丝相对于该装设螺栓旋转以将该调整螺丝相对于该装设螺栓以第一速率在第一方向移动，且该调整螺丝相对于该轴衬旋转以将该轴衬与该升举板相对于该调整螺丝以第二速率在第二方向移动，其中该轴衬是固定至该升举板，而其中该第二方向是相反于该第一方向且该第二速率是不同于该第一速率。 The method further comprises the adjusting screw by rotating the fine adjustment of the spacing, wherein the adjusting screw with respect to the mounting stud is rotated to the adjusting screw relative to the mounting stud at a first rate of movement in a first direction, The adjustment screw and the bushing with respect to the rotary bushing and the leveling plate with respect to the adjustment screw at a second rate of movement in a second direction, wherein the bushing is fixed to the leveling plate, and wherein the The second direction is opposite to the first direction and the second rate is different from the first rate.
附图说明 Brief Description
本发明的前述目的、特征与优点将可由前述说明与所伴随的图式而更佳了解，其中：图1为根据本发明一实施例的一基材支撑件的简化前视图，其显示出一高度调整机构；图2为图1的高度调整机构的部分侧视图，其显示出用于一测微计的沟槽；图3为图1的高度调整机构的部分侧视图，其显示出用于量测高度调整的一测微计的使用；图4显示对于一半导体制程中，沉积速率(单位时间的厚度)对基材与面板之间的间距的作图；图5显示对于另一半导体制程中，沉积速率(单位时间的厚度)对基材与面板之间的间距的作图；图6为根据本发明一实施例的基材支撑件升举方法的流程图；图7为在一实例中形成在基材上的一层次的厚度图；图8为根据本发明一实施例的一高度调整装置的立体图，其中该高度调整装置被装设至一升举板；图9为图8的高度调整装置的截面图；图10为图8的高度调整装置的一调整螺丝、一轴衬与一装设螺栓的截面图；图11为图8的高度调整装置以球形垫圈被装设至升举板的立体图；图12为图11所示高度调整装置的正视图；图13为图8的高度调整装置的立体图，其显示出用于将轴衬锁固至升举板的一锁固板；图14为图8的高度调整装置的立体图，其显示出用于将调整螺丝锁固至升举板的一锁固盖罩；图15为图8的高度调整装置的立体图，其显示出用于将调整螺丝锁固至升举板的一锁固盖罩的另一实施例，其中该锁固盖罩具有一锁固螺帽；以及图16为一正视图，其显示出在图15的高度调整装置中锁固盖罩与锁固螺帽的使用。 The foregoing object of the present invention, the foregoing features and advantages will be described with the accompanying drawings and the better understanding, wherein: Figure 1 is a simplified front view of an embodiment of the invention is a substrate support member, which shows a height adjusting mechanism; Fig. 2 is a partial side view of the height adjusting mechanism of FIG. 1, which shows for a micrometer trench; Figure 3 is a partial side view of the height adjusting mechanism of FIG. 1, which shows for measurement height adjustment using a micrometer; Figure 4 shows that for a semiconductor manufacturing process, the deposition rate (thickness per unit time) of the spacing between the substrate and the panel drawing; Figure 5 shows another semiconductor manufacturing process for , the deposition rate (thickness per unit time) of the spacing between the substrate and the mapping panel; Fig. 6 is a flowchart of an example of the substrate support member lift an embodiment of the present invention is a method; Figure 7 is an example in is formed in a thickness on the substrate level; Figure 8 is a perspective view of a height adjusting device according to an embodiment of the present invention, wherein the height adjusting means is mounted to a leveling plate; FIG. 9 is FIG. 8 sectional view of the height adjustment device; Fig. 10 is a height adjustment device of FIG. 8 and an adjusting screw, a bushing with a mounting stud sectional view; FIG. 11 is the height adjustment device 8 is mounted to a spherical washer liters For a perspective view of the plate; FIG. 12 is shown in Figure 11 a front view of the height adjusting means; FIG. 13 is a perspective view of the height adjusting apparatus of Figure 8, which shows a lock for fixing the bushing to the leveling plate in a locking plate ; FIG. 14 is a perspective view of the height adjusting means 8, which shows for the adjusting screw locking to the lifting plate of a locking cover; FIG. 15 is a perspective view of the height adjusting apparatus of Figure 8, which shows the use for locking the adjustment screw to the leveling plate of a locking cap of another embodiment, wherein the locking cap has a locking nut; and Figure 16 is a front view, which shows in FIG. 15 height adjustment device locking cover and using a lock nut.
主要元件符号说明10基材支撑件12制程腔室13基材14基材支撑件表面16气体分配构件18轴20支撑结构或毂24促动器28托架30升举板34调整构件36参考表面或底部表面40调整位置50量测位置54量测装置58参考表面的末端60锁固螺帽102形成层次于位于基材支撑件上的基材上104于三量测位置处量测层次厚度106计算三量测位置之间的厚度差异108将两量测位置与一参考量测位置之间的厚度差异除以沉积时间以获得沉积速率微分110使用一先前决定的关联因子而将沉积速率微分转换成在两量测位置处介于基材支撑件与面板之间的间距调整112对于基材支撑件进行间距调整以改善将被形成在基材上的层次的均匀性200高度调整装置202装设螺栓204螺栓刻纹表面206轴衬208轴衬刻纹表面210调整螺丝212第一刻纹表面214第二刻纹表面222球形垫圈224球形垫圈226开口228放大凹处230固持板或条270锁固盖罩272凹槽开口274沟槽280锁固盖罩282开口284沟槽286锁固螺帽具体实施方式如图1所示，一基材抓持件或支撑件10是被设置在一制程腔室12内，其中该制程腔室12是用以处理被置放在基材支撑件表面14上的基材13。 DESCRIPTION OF REFERENCE NUMERALS 10 main element substrate support member 12 of the process chamber 13 the substrate 14 of the substrate support surface 16 of the gas distribution member 18 or shaft 20. The support structure 28 of the hub 24 of the actuator brackets 30 lift plate 34 to adjust the reference surface of the member 36 end 60 or bottom surface 40 to adjust the position of the measurement position 54 50 58 amount of the reference surface of the measurement device level locking nut 102 is formed on a substrate support member located on the substrate 104 in the three measuring position level is measured at the amount of thickness 106 The thickness of the three measurements to calculate the difference between the positions 108 thickness differences between the two measurement positions with a reference measurement positions divided by the deposition time for the deposition rate differential correlation factor of 110 using a previous decision and deposition rate differential conversion as between the two measurement locations the spacing between the substrate support member 112 for adjusting the panel substrate support member be adjusted to improve the uniformity of spacing is formed on a substrate 200 of level height adjusting device 202 installed 204 206 bolt threaded surface bolt bushing 208 bushing threaded surface 212 of the first 210 adjustment screw threaded surface 214 of the second threaded surface 222 spherical spherical washer washer 224 226 228 Enlarge recess opening 230 or Article 270 retention plate locking cover 272 opening 274 groove 280 groove cover 282 opening locking groove 286 lock nut 284 specific embodiment shown in Figure 1, a gripping member or the substrate support member 10 is disposed in a process chamber 12 inner chamber, wherein the process chamber 12 is used to handle is placed on the substrate support surface 14 of the substrate 13. 一气体分配构件16是大致上被设置成相对于基材支撑表面14，其中该气体分配构件16典型地为具有用以导入气体的数个孔洞的一面板。 A gas distribution member 16 is arranged to substantially support surface 14 with respect to the substrate, wherein the gas distribution member 16 is typically used for introducing a gas having a plurality of orifices of a panel. 基材支撑件10包括有一轴18，该轴18被支撑在一支撑结构或毂20上且可相对于毂20滑动以调整基材支撑件表面14与面板16之间的间距。 Substrate support member 10 includes a shaft 18, the shaft 18 is supported on a support structure or hub 20 and is slidable relative to the hub 20 to adjust the distance between the surface of the substrate support member 14 and panel 16 between. 毂20被设置于腔室12之外。 The hub 20 is disposed outside the chamber 12. 轴18是通过一促动器24而可垂直地移动。 The shaft 18 is vertically movable by an actuator 24. 基材抓持件10的倾斜可以由毂20的倾斜来定义，这是因为其两者相互连接。 Inclined substrate gripping member 10 may be defined by the hub 20 is inclined, since it is both connected to each other. 毂20连接至一托架28，该托架28是被设置于一升举构件或升举板30。 Hub 20 is connected to a bracket 28, the bracket 28 is disposed on a lift member or leveling plate 30. 基材抓持件10的倾斜的调整是通过调整升举板的倾斜来达成。 The base member to adjust the inclination of the grip 10 is inclined by adjusting the lifting plate to achieve.
升举板30大致上被设置成平行于基材支撑件表面14。 Lift plate 30 is disposed substantially parallel to the substrate support surface 14. 至少两调整构件34与一连接构件(例如一球形轴承)被耦接在介于升举板30与一参考表面36之间。 At least two adjustment members 34 and a connecting member (e.g., a spherical bearing) are coupled between the leveling plate 30 liters of between 36 and a reference surface. 在所显示的实施例中，参考表面36为腔室12的底部表面36，但是其可以为相对于面板16被固定住的其他表面。 In the embodiment shown, the reference surface 36 for the bottom surface 36 of the chamber 12, but it may be fixed with respect to the other surface of the panel 16 is live. 参考表面36可以大致上平行于面板16。 Reference surface 36 may be substantially parallel to the panel 16. 调整构件34是在数个调整位置40处被连接至升举板30，其中该些调整位置40是分布于升举板30上。 Adjustment member 34 is adjusted in a number of positions 40 is connected to the lifting plate 30, wherein the plurality of adjustment points 40 is distributed in the lifting plate 30. 调整构件34是可以独立调整的以改变在调整位置40处升举板30与参考表面36之间的间距。 Adjustment member 34 can be independently adjusted to vary the position of 40 liters in the adjustment plate 30 and the lift 36 the spacing between the reference surface. 这会接着改变在数个对应调整位置42处介于基材支撑件表面14与面板16之间的间距，藉此调整了基材支撑件表面14相对于面板16的倾斜。 This would then change the number of adjustment positions corresponding to the spacing 42 between the surface of the substrate support member 14 and between panel 16, thereby adjusting the inclination of the panel 16 with respect to the substrate support surface 14. 在图1实施例中，基材支撑件表面14的对应调整位置42为大致上对齐于升举板30的调整位置40，这是因为升举板30是大致上平行于基材支撑件表面14。 In the embodiment of Figure 1, the substrate support member 42 to adjust the position corresponding to the surface substantially aligned with the leveling plate 40 to adjust the position 30 of 14, because the lifting plate 30 is substantially parallel to the surface of the substrate support member 14 . 在特定实施例中，对应调整位置42相对于基材支撑件表面14中心而均匀地分布于基材支撑件表面14周围。 In a particular embodiment, the adjustment of the position of the corresponding substrate support member 42 with respect to the center of the surface 14 uniformly distributed around the substrate support surface 14.
如图2所更详细显示者，升举板30包括有数个量测位置50以监控量测装置于量测升举板30与参考表面36之间的间距。 Figure 2 are shown in more detail, the lifting plate 30 includes several measurement positions 50 to monitoring and measuring devices to measure the distance between the lifting plate 30 and 36 between the reference surface. 如图2与图3所示，量测位置50包括有用以装设量测装置54的沟槽，其中该量测装置54可以为测微计(micrometer)。 2 and 3, comprises a measurement position 50 useful in the installation groove measuring device 54, wherein the measuring means 54 may be a micrometer (micrometer). 当调整升举板30时，测微计54可以暂时地被装设在量测位置50，并且在调整结束后被移除。 When adjusting the leveling plate 30, micrometer 54 may be temporarily mounted at the measurement position 50, and removed after the adjustment is completed. 典型地，每一量测位置50具有一对应量测位置40，并且每一量测位置50被设置于接近或邻近于对应量测位置40。 Typically, each measurement location 50 has a corresponding measurement position 40, and each measurement location 50 is disposed proximate or adjacent to a corresponding measurement position 40. 例如，介于每一量测位置50与对应量测位置40之间的距离为实质上小于基材13的直径(例如小于约基材直径的10％)。 For example, between the substrate 13 is substantially smaller than the diameter (e.g., less than about 10% of the substrate diameter) the distance 40 between each measurement location 50 and the corresponding measurement positions. 在替代实施例中，量测位置50与调整位置40的数目与邻近性可以改变。 In an alternative embodiment, the measurement position 50 and adjust the position of the number 40 and the proximity can be changed. 可以使用不同的量测技术。 You can use different measuring techniques.
每一调整构件34包括有调整螺丝，调整螺丝刻纹地耦接至升举板30且具有抵顶住制程腔室12的参考表面36的末端58。 Each adjustment member 34 includes adjustment screws, adjustment screws threadingly coupled to the leveling plate 30 and having a process chamber abutting against the reference surface 12 of the terminal 36 58. 一突出锁固螺帽60刻纹地耦接至每一调整螺丝34，且抵顶住升举板30的底部表面。 A projecting locking nut 60 threadingly coupled to each adjustment screw 34, and abuts against the bottom surface of the leveling plate 30. 另一突出锁固螺帽62亦可以被提供以刻纹地耦接至调整螺丝34且抵顶住升举板30的顶部表面。 Another outstanding lock nut 62 may also be provided to threadingly coupled to the adjustment screw 34 abuts against the leveling plate and the top surface 30. 突出锁固螺帽较佳地提供了足够的微调以达到升举板30与基材支撑件表面14的倾斜调整的所希望精确性(例如调整约4密尔)。 Projecting locking nuts preferably provide enough fine-tuned to achieve the lifting plate 30 and the substrate support surface 14 of the tilt adjustment of the desired accuracy (e.g., adjustment to about 4 mils). 一Allren扳手或类似工具可被用以旋转该突出锁固螺帽以进行调整。 A Allren wrench or similar tool may be used to rotate the projecting locking nut for adjustment. 当然，其他适当的调整机构可以被用于替代的实施例中。 Of course, other suitable adjustment mechanisms may be used in alternative embodiments.
实验已经证明层次在一基材13上的沉积速率是与基材13及面板16之间的间距相关联，因此形成在基材13上层次的厚度均匀性可以通过改变基材支撑件表面14的倾斜来调整，其中基材13停置于该基材支撑件表面14上。 Experiments have shown that levels of deposition rate on a substrate 13 is the pitch associated with the substrate 13 and between panel 16, 13 thus formed on the substrate level by changing the thickness uniformity of the substrate support surface 14 to adjust the inclination, wherein the substrate 13 disposed in the substrate support member stop surface 14. 图4与图5是显示出两组试验的实验结果。 Figures 4 and 5 shows the experimental results of two experiments.
在图4中，改变基材与面板之间的间距而形成BPSG薄膜在基材上。 In Figure 4, changing the spacing between the substrate and the BPSG film is formed on the panel substrate. 薄膜是使用He、TEOS、TEB、TEPO作为制程气体于约550℃温度与约200托耳压力而被形成。 Film using He, TEOS, TEB, TEPO as process gases at a temperature of about 550 ℃ and about 200 Torr pressure is formed. 图4绘制出沉积速率(/min)与间距(mils)的关系图。 Figure 4 plotted deposition rate ( / min) and the pitch (mils) of the diagram. 当间距增加时，沉积速率降低约27.953/min，其为用以计算出对于特定制程的一关联因子的线的斜率。 When the distance increases, the deposition rate is reduced from about 27.953 / min, which is used to calculate the specific manufacturing process for a correlation factor of slope of the line.
在图5中，改变基材与面板之间的间距而形成BPSG薄膜在基材上。 In Figure 5, changing the spacing between the substrate and the panel is formed on the BPSG film on the substrate. 薄膜是使用He、TEOS、TEB、TEPO作为制程气体于约550℃温度与约200托耳压力而被形成。 Film using He, TEOS, TEB, TEPO as process gases at a temperature of about 550 ℃ and about 200 Torr pressure is formed. 当间距增加时，沉积速率降低约23.169/min，其为用以计算出对于特定制程的一关联因子的线的斜率。 When the distance increases, the deposition rate is reduced from about 23.169 / min, which is used to calculate the specific manufacturing process for a correlation factor of slope of the line. 图4与图5的相当小差异是归因于升举机构的可变性、液体流变化、实验室温度等等。 Figures 4 and 5 is relatively small differences due to the variability of the lifting mechanism, liquid flow variations, laboratory temperature and the like.
根据沉积速率与基材及面板之间的间距的关联，以下将描述三点计算倾斜程序(three point counter-tilt)以调成基材支撑件表面的倾斜而改善均匀性，其中该关联是被建立用于牵涉的特定形式制程。 According to the associated spacing between the substrate and the deposition rate with the panel, the following three points will be described inclination calculation program (three point counter-tilt) to tune into the inclined surface of the substrate support member while improving uniformity, wherein the association is established for the specific form of the process involved. 如图6的流程图100所示，在将基材支撑件定位于距离面板的一所希望间距之后，一层次形成于基材上(步骤102)。 Flow chart of FIG. 6, after the substrate support member positioned in a desired distance from the panel pitch, a hierarchy is formed on a substrate (step 102) 100. 在步骤104，量测层次厚度，其可以在原位完成。 In step 104, a thickness measurement level, which can be done in situ. 图7显示一厚度图90的范例，该厚度图具有49个点以产生在基材上该层次的一厚度曲线。 Figure 7 shows an example of a thickness map 90, the thickness map having 49 points to generate a thickness profile of the level on the substrate. 基材上三点92、94、96在位置上对应于升举板30上的三量测位置50以使用图3中测微计54来量测间距。 92,94, 96 at three points on the substrate corresponding to the position on the lifting plate 30 on the amount of the three measured position 50 in Figure 3 using 54 micrometer to measure pitch. 该三点92、94、96典型地为接近基材边缘，且角度上相对于基材中心而大致上均匀地相隔开。 The three 92,94,96 typically close to the edge of the substrate, and the angle relative to the center of the substrate and substantially evenly spaced apart. 例如，该三点92、94、96相对于基材中心隔开约120°，且每一者距离基材边缘有小于基材半径的10％的距离。 For example, the three points 92, 94 spaced from the center with respect to the substrate of about 120 °, and each has a radius of less than 10% of the distance from the base substrate edge.
请参阅图6，下一步骤106是计算该三点间的厚度差异。 See Figure 6, the next step is to calculate the thickness of 106 difference between the three points. 例如，点92是被选作为一参考位置，且计算参考点92与在剩下位置的其他点94、96之间的厚度差异。 For example, point 92 is selected as a reference position, and calculating the reference point 92 and the other difference in thickness between the points 94, 96 in the rest position. 在步骤108，厚度差异(点94与92之间及点96与92之间)通过沉积时间被分割以获得参考点92与剩下点94、96之间的沉积速率微分。 To obtain the reference point 92 and the remaining points 94, 96 between the deposition rate differential in step 108, the thickness differences (between the points 94 and 92 and between points 92 and 96) is divided by the deposition time. 一先前决定的关联因子接着被用来将沉积速率微分转换成在剩下点94、96处之间距调整以改善均匀性(步骤110)。 A previously determined correlation factor is then used to convert the deposition rate differential remaining at spaced points 94, 96 of the adjustment to improve the uniformity (step 110). 如果在剩下点的厚度大于在参考点92的厚度的话，则间距调整为正的以增加在剩下点处的基材支撑件与面板之间的间距。 If the point is greater than the thickness of the remaining thickness at the reference point 92, then the spacing adjustment is positive to increase the spacing between the remaining points of the substrate support member and the panel. 相反地，如果在剩下点的厚度小于在参考点92的厚度的话，则间距调整为负的以减少在剩下点处的基材支撑件与面板之间的间距。 Conversely, if the thickness of the remaining points of the reference point is less than the thickness at 92, then the spacing adjustment is negative to decrease the spacing between the remaining points of the substrate support member and the panel. 在步骤112，进行间距调整，且校正基材支撑件以对于所选择特定制程来形成改善均匀性的层次。 In step 112, where pitch adjustment and correction for the substrate support member to select a particular process to improve the uniformity of the formed layers.
关联因子正比于沉积速率对间距作图(如图4与图5)的斜率。 Correlation factor is proportional to the deposition rate of the pitch plotted (FIG. 4 and FIG. 5) of the slope. 亦即，关联因子正比于间距改变除以层次沉积厚度速率的比值。 That is, the correlation factor is proportional to the distance divided by the level of change in the ratio of the rate of deposition thickness. 典型地，关联因子将不等于斜率，但是将必须被修正以解释三点计算倾斜程序与间距调整之间的差异。 Typically, the association will not be equal to the slope factor, but it will have to be modified to account for three-point tilt calculate the difference between the program and the spacing adjustment. 为了获得图，基材向上或向下移动而不倾斜。 To obtain maps, substrate move up or down without tilting. 然而，在三点计算倾斜程序中，在剩下点的其一者的间距相对于参考点被调整以将基材倾斜。 However, in the three-point calculation tilt program, in the pitch of the remaining one of those points with respect to the reference point is adjusted to tilt the substrate. 因此，关联因子将等于一关联因子或常数乘以图斜率，其可以通过进行许多实验而经验性决定以获得关联因子而达到薄膜厚度均匀性。 Therefore, a correlation factor will equal or constant multiplying factor associated slope map, which can be carried out many experiments and empirical decided to get associated factor to achieve film thickness uniformity.
不同实验被进行以确定三点计算倾斜程序的重复性，以达到改善对于特定半导体制程形成在基材上层次的厚度均匀性。 Different experiments were performed to determine the three-point calculation procedure inclined repeatability, in order to achieve improved manufacturing process for a particular semiconductor substrate is formed at the level of thickness uniformity.
图8与图9显示出用于在一特定位置处调整腔室体12与升举板30之间的间距的一高度调整装置200。 Figure 8 and Figure 9 shows a particular position for adjustment of the chamber 12 and the spacing 30 between a height adjusting apparatus 200 lifting plate. 高度调整装置200提供了对于基材支撑件的高解析升举的粗糙的与精细的调整。 Height adjustment device 200 is provided a substrate support for high-resolution lifting coarse and fine adjustment. 高度调整装置200能够根据本发明升举方案而被使用于任何至少两高度调整位置中。 Height adjustment device 200 can lift according to the present invention are used in any of at least two height adjustment positions. 在一特定实施例中，两高度调整装置200被用于两位置处，且具有一连接构件(例如一球形耦接件)的一相当简单的附件被提供在第三位置处。 A relatively simple attachment In a particular embodiment, two height adjusting means 200 is applied to two positions, and having a connecting member (e.g., a spherical coupling member) is provided at a third location.
高度调整装置200包括有例如通过与腔室体12的一刻纹连接而设置在腔室体12的一装设螺栓202。 Height adjustment apparatus 200 includes, for example by the chamber body 12 is connected to the moment groove provided in the chamber body 202 which carries a bolt 12. 装设螺栓202具有一螺栓刻纹表面204。 Mounting stud bolt 202 has a threaded surface 204. 可被固定至升举板30的一轴衬206包括有一轴衬刻纹表面208。 A bushing may be secured to the lifting plate 30 has a substrate 206 including a threaded surface of the shaft 208. 一调整螺丝210具有刻纹地与螺栓刻纹表面204卡合的第一刻纹表面212，以及刻纹地与轴衬刻纹表面208卡合的第二刻纹表面214。 An adjustment screw 210 having engravings with the stud threaded surface 204 engages the first threaded surface 212, and threadingly with the bushing threaded surface 208 engages second threaded surface 214. 在第8-10图所显示的实施例中，螺栓刻纹表面204为装设螺栓202的一外表面，轴衬刻纹表面208为轴衬206的一内表面，第一刻纹表面212为调整螺丝210的一凹处中的一内表面，并且第二刻纹表面214为调整螺丝210的一外表面。 In the embodiment shown in Figure 8-10, the stud threaded surface 204 for the installation of an outer surface of the bolt 202, the bushing threaded surface 208 a bush an inner surface 206, a first threaded surface 212 is an adjustment screw 210 in an inner surface of the recess, and the second threaded surface 214 is an outer surface of the adjustment screw 210. 一对球形垫圈222、224被设置在介于轴衬206与升举板30之间，如第9、11、12图中所示。 A pair of spherical washers 222, 224 are provided, as shown in interposed between the bushing 206 and leveling plate 30 of 9,11,12 FIG.
当组装时，调整螺丝210延伸穿过升举板30的一开口226，其中该升举板30包括一放大凹处228以接收轴衬206与球形垫圈222、224，如图9所示。 When assembled, the adjustment screw 210 extends through the elevating plate 30 an opening 226, wherein the leveling plate 30 includes an enlarged recess 228 to receive the spherical bushing 206 and washer 222, 224, as shown in FIG. 一锁固盖罩270压迫球形垫圈222、224与轴衬206而抵住升举板30，并且调整螺丝刻纹地与轴衬206卡合且相对于轴衬206及升举板30为可移动的。 A locking cap 270 and the compression of spherical washers 222, 224 and the bushing 206 against the leveling plate 30, and the adjustment screw threadingly engaged with the bushing 206 with respect to the bushing 206 and leveling plate 30 is movable a. 对于粗糙的调整，调整螺丝相对于装设螺栓202被旋转，并且轴衬206是与螺丝210移动。 For coarse adjustment, the adjustment screw with respect to the mounting stud 202 is rotated, and the bushing 206 with the screw 210 moves. 移动速率是由螺纹或每吋螺纹的转圈所决定，其中该螺纹是介于调整螺丝210的第一刻纹表面212与装设螺栓202的螺栓刻纹表面204之间的连接。 Rate of movement is determined by the threads or revolutions per inch thread, wherein the thread is between a first adjusting screw 212 and threaded surface 210 of the mounting stud threaded surface 204 is connected between the bolt 202. 在一实例中，刻纹连接每吋具有24螺纹，且移动速率为调整螺丝210相对于装设螺栓202的每一旋转为1/24吋。 In one example, marking 24 having a threaded connection per inch, and the rate of movement of the adjustment screw 210 with respect to each of the rotary mounting stud 202 is 1/24 inch.
在粗糙调整使得升举板能距离腔室体12在一所希望范围的间距内之后，即进行精细调整。 In the rough plate can be adjusted so that the lifting body from the chamber 12 after within a desired range of spacing, i.e., to make fine adjustments. 为了预备调整装置以用于精细调整，轴衬206被锁固至升举板30。 To prepare adjustment device for fine adjustment, bushing 206 is locked to the lifting plate 30. 可以使用任何适当的锁固机构。 Any suitable locking mechanism. 在图13中，一固持构件(例如一固持板或条230)是接附至升举板30的侧面以在轴衬206内锁固至升举板30。 In Figure 13, a holding member (e.g., a retention plate or strip 230) is attached to the lift plate 30 to the side surface of the bushing 206 to lift the locking plate 30. 固持构件230抵顶住轴衬206的一平坦表面，用以避免其相对于升举板30旋转，且避免升举板30相对于调整螺丝210的侧至侧移动。 Holding member 230 abuts against a flat surface of bushing 206, in order to avoid lifting plate 30 with respect to rotation, and avoid lifting the side plate 30 relative to the adjusting screw 210 to the side. 固持构件230可以通过固定件(例如螺丝)而接附至升举板30。 Retaining member 230 by fasteners (such as screws) and attached to the lifting plate 30.
由于调整螺丝210刻纹地耦接至装设螺栓202与轴衬206且被装设在至升举板30(如图9与图13所示)，则可以达到升举板30相对于腔室体12的精细调整(通过利用锁固盖罩270或类似构件)。 As the adjustment screw 210 threadingly coupled to the mounting stud 202 and the bushing 206 and is mounted to the leveling plate 30 (FIG. 9 and FIG. 13), you can achieve the lifting plate 30 relative to the chamber The fine adjustment body 12 (through the use of the locking cap 270 or similar member). 当调整螺丝210旋转时(例如顺时钟方向)，调整螺丝210经由介于调整螺丝210的第一刻纹表面212与装设螺栓202的螺栓刻纹表面204之间的刻纹连接，而相对于装设螺栓202在第一方向移动(例如图9中的向上方向)。 When the adjustment screw 210 is rotated (eg clockwise), the adjustment screw 210 204 engravings connection is between the adjustment screw threaded surface 210 through the first bolt mounting stud threaded surface 212 and 202, and with respect to mounting stud 202 moves (e.g. upward direction in FIG. 9) in a first direction. 同时，轴衬206与升举板30经由调整螺丝210的第二刻纹表面214与轴衬206的轴衬刻纹表面208之间的刻纹连接，而相对于调整螺丝20在第二方向移动(例如向下方向)，其中第二方向是相反于第一方向。 Meanwhile, the bushing 206 and the leveling plate 30 via the adjusting screw threaded surface 210 of the second bushing 214 and the bushing threaded surface 208 is connected between the marking 206, and relative to the adjusting screw 20 is moved in the second direction (e.g., downward direction), wherein the second direction is opposite to the first direction. 调整螺丝210相对于装设螺栓202以第一速率(例如对于每吋24螺纹的一刻纹连接为每转1/24吋)在第一方向移动。 Adjustment screw 210 (1/24 inch per revolution, for example, the moment the connection pattern 24 threads per inch for the) mobile with respect to the mounting stud 202 in a first direction at a first rate. 轴衬206与升举板30相对于调整螺丝210以第二速率在第二方向移动。 Bushing 206 and leveling plate 30 with respect to the adjustment screw 210 to move at a second rate in a second direction. 在实例中，调整螺丝210与轴衬206之间的刻纹连接每吋具有28螺纹，使得移动于每转1/28吋的第二速率。 In the examples, the adjustment screw 210 and the bushing 206 between the sculptured connection per inch with 28 threads, so that the mobile transfer 1/28 inch per second rate. 移动的净速率为第一速率与第二速率的差异，即每转1/24-1/28吋，为每转0.006吋在第一方向移动(向上方向)。 The net rate of movement is the difference of the first rate and the second rate, i.e., every rotation of 1 / 24-1 / 28 inch, 0.006 inch per revolution movement (upward direction) in a first direction. 移动于相反方向可以通过将调整螺丝210旋转于相反方向(例如逆时钟方向)来达到。 Can be moved in the opposite direction of rotation by the adjustment screw 210 in the opposite direction (e.g., counterclockwise direction) to achieve. 该两刻纹连接的高解析度移动可以使升举板30相对于腔室体12精细调整。 High-resolution moving the two sculptured connection allows the leveling plate 30 with respect to the chamber body 12 fine adjustment. 球形垫圈222、224补足了升举板30相对于腔室体12的任何不当对准。 Spherical washers 222, 224 complements the leveling plate 30 with respect to the chamber body 12 of any improper alignment.
在所希望的精细调整完成后，高度调整装置200则被锁固于固定位置。 After the desired fine adjustment of the height adjustment device 200 were locked in a fixed position. 可以使用许多适当的锁固机构。 Can use many appropriate locking mechanism. 第8、9、14图显示了锁固盖罩270的使用，其中该锁固盖罩270是耦接于调整螺丝210与升举板30。 The first figure shows 8,9,14 locking the cover 270 to use, wherein the locking cap 270 is coupled to the adjustment screw 210 and the leveling plate 30. 锁固盖罩270包括有一凹槽开口272，其中该凹槽开口272是卡合或紧密配合于调整螺丝210之外表面。 Locking cover 270 includes a recess 272 opening, wherein the opening of the recess 272 is engaged with or closely fitted to the outside of the adjustment screw 210 surface. 锁固盖罩270更包括有一对沟槽274，固定件可以被使用而穿过沟槽274以将锁固盖罩270固定至升举板30。 Locking cap 270 further includes a pair of grooves 274, fixing the locking member may be secured to the cover 270 lifting plate 30 and through the groove 274 in use. 这样的一锁固机构将调整螺丝210锁固至升举板30，且避免了调整螺丝210相对于升举板30的旋转。 Such a locking mechanism 210 for locking the adjustment screw to the leveling plate 30, and to avoid the rotation of the adjustment screw 210 of the leveling plate 30 with respect to. 在图15与图16所显示的另一实施例中，锁固盖罩280具有一开口282与一对沟槽284，其中该开口282没有紧密地配合于调整螺丝210周围(例如一圆形开口)。 In another embodiment of FIG. 15 and shown in FIG. 16, locking the cover 280 has an opening 282 and a pair of grooves 284, wherein the opening 282 does not fit tightly around the screw 210 to adjust (e.g., a circular opening ). 锁固盖罩280被设置在轴衬206与升举板30的一侧上，且一锁固螺帽286被设置在轴衬206与升举板30的另一相反侧上。 Locking cover 280 is provided on one side of the bushing 206 and leveling plate 30, and a locking nut 286 is provided on the bushing 206 and the opposite side to the other 30 lifting plate. 锁固盖罩280自一侧将轴衬206抵顶住升举板30，且锁固螺帽286刻纹地耦接于调整螺丝210以自相反侧刻纹地抵顶住升举板30，藉此将轴衬206与调整螺丝210锁固抵住升举板30而避免调整螺丝210旋转。 Self-locking the cover 280 abuts the side of the bushing 206 against the leveling plate 30, and the lock nut 286 threadingly coupled to the adjustment screw 210 to the opposite side to threadingly abutting against the leveling plate 30, whereby the adjustment screw bushing 206 and 210 against lifting the locking plate 30 to avoid rotation of the adjustment screw 210.
前述设备与方法仅是为了说明本发明原理与其他实施例之用，在不脱离权利要求所定义的本发明精神与范围下是可以进行变更的。 The aforementioned apparatus and method are merely illustrative of the principles of the present invention is the use case with the other embodiments, in the spirit and scope of the present invention without departing from the claims can be defined is changed. 例如，调整螺丝与装设螺栓上的刻纹表面可以被建构成在不同的内表面与外表面为不同的。 For example, with the adjustment screw mounted on the threaded surface of the bolt can be built in different constituting the inner surface and an outer surface for different. 因此，本发明范围不应该通过参照前述说明而来决定，而是应该参照权利要求与其均等物范围而加以决定。 Accordingly, the scope of the present invention should not be decided from the foregoing description with reference to, but should rather be determined by reference to the scope of claims and its equivalents.
|Citing Patent||Filing date||Publication date||Applicant||Title|
|CN103745902A *||16 Dec 2013||23 Apr 2014||深圳市华星光电技术有限公司||PECVD processing device and method for carrying out PECVD processing on substrate|
|WO2015089933A1 *||23 Jan 2014||25 Jun 2015||深圳市华星光电技术有限公司||Pecvd (plasma enhanced chemical vapor deposition) processing device and method for implementing pecvd processing on substrate|
|International Classification||C23C16/458, C23C14/50|
|Cooperative Classification||Y10T74/18752, C23C16/4583|
|31 Oct 2007||C06||Publication|
|26 Dec 2007||C10||Entry into substantive examination|
|25 May 2011||C14||Grant of patent or utility model|
|28 Dec 2011||C41||Transfer of patent application or patent right or utility model|
|6 Jan 2016||EXPY||Termination of patent right or utility model|