CN101013737A - 热绝缘相变存储元件及其制造方法 - Google Patents

热绝缘相变存储元件及其制造方法 Download PDF

Info

Publication number
CN101013737A
CN101013737A CNA200610146335XA CN200610146335A CN101013737A CN 101013737 A CN101013737 A CN 101013737A CN A200610146335X A CNA200610146335X A CN A200610146335XA CN 200610146335 A CN200610146335 A CN 200610146335A CN 101013737 A CN101013737 A CN 101013737A
Authority
CN
China
Prior art keywords
electrode
via hole
memory cell
embolism
heat insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200610146335XA
Other languages
English (en)
Inventor
龙翔澜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
Original Assignee
Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Publication of CN101013737A publication Critical patent/CN101013737A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making

Abstract

本发明公开了一种热绝缘存储元件，其包括存储单元，该存储单元包括多个电极，其间带有过孔；热绝缘体位于该过孔中并界定空洞延伸在电极表面之间。一种如相变材料等的存储材料，位于该空洞中并电耦接到这些电极以生成存储材料元件。该热绝缘体可帮助降低操作该存储材料元件所需要的电能。电极可接触到栓塞的外表面，以填补位于栓塞表面的不平整处的任何如孔洞型瑕疵等。本发明同时公开一种用于制造该元件并填补栓塞表面不平整处的方法。

Description

热绝缘相变存储元件及其制造方法
相关申请
本案在2005年11月15日申请美国临时性专利申请，该申请案的申请案号为60/736,721，发明名称为“热控制/绝缘相变存储装置及其方法”。
联合研究合约的当事人
纽约国际商业机械公司、台湾旺宏国际股份有限公司及德国英飞凌技术公司(Infineon Technologies A.G.)为联合研究合约的当事人。
技术领域
本发明涉及高密度存储元件，其基于以相变为基础的存储材料，包括相变材料以及其它材料，及制造此等元件的方法。
背景技术
以相变为基础的存储材料广泛地用于读写光盘中。这些材料包括至少两种固态相，包括例如大体上为非晶态的固态相以及大体上为结晶态的固态相。激光脉冲用于读写光盘中，以在二种相间切换，并读取该种材料在相变后的光学性质。
比如硫属化物及类似材料的这种相变存储材料，可通过施加其幅度适合于集成电路中的电流，而引起晶相转换。一般来讲，非晶态的特征是其电阻高于结晶态，可轻易测量得到该电阻值而用于作为指示。这种特性则引发使用可编程电阻材料以形成非易失性存储器电路等兴趣，此电路可用于随机存取读写。
从非晶态转变到结晶态一般为低电流步骤。从结晶态转变到非晶态(以下称为重置(reset))一般为高电流步骤，其包括短暂的高电流密度脉冲以融化或破坏结晶结构，此后该相变材料快速冷却，抑制相变的过程，使得至少部份相变结构得以维持在非晶态。在理想状态下，使得相变材料从结晶态转变到非晶态的重置电流幅度应越低越好。可通过减小存储器中的相变材料元件的尺寸以及减少电极与该相变材料的接触面积来实现降低重置所需的重置电流幅度，因此可针对该相变材料元件施加较小的绝对电流值而实现较高的电流密度。
该领域发展的一种方法是致力于在集成电路结构上形成微小孔洞，并使用微量可编程的电阻材料填充这些微小孔洞。致力于此等微小孔洞的专利包括：在1997年11月11日公告的美国专利第5,687,112号“Multibit Single Cell Memory Element Having Tapered Contact”，发明人为Ovshinky；在1998年8月4日公告的美国专利第5,789,277号“Method of Making Chalogenide[sic]Memory Device”，发明人为Zahorik等；在2000年11月21日公告的美国专利第6,150,253号“Controllable Ovonic Phase-Change Semiconductor Memory Deviceand Methods ofFabricating the Same”，发明人为Doan等；以及在2004年11月9日公告的美国专利第6,815,704 B1号“Phase Change MemoryDevice Employing Thermally Insulating Voids”，发明人为Chen。
在以非常小尺寸制造这些元件以及要满足大规模生产存储元件时所需求的严格工艺变量时，则会遇到问题。优选的是提供一种具有微小尺寸以及低重置电流的存储单元(memory cell)结构以及用于制造该结构的方法。
发明内容
本发明的第一目的是涉及一种热绝缘存储元件，其包括存储单元存取层以及用于连接到该存储单元存取层的存储单元层。该存储单元层包括存储单元，该存储单元包括：第一与第二电极，其包括彼此相对且分离的电极表面；延伸经过各电极表面间的过孔(via)；位于该过孔中的热绝缘体，该热绝缘体在过孔中包括侧壁结构；其界定延伸在二电极表面之间的空洞(void)；以及存储材料，如相变材料，其位于该空洞中定电耦接这些电极表面。该热绝缘体可协助降低操作该存储材料所需的电能。在某些实施例中，该存储单元层包括电极间绝缘体，其由分隔材料制成，且过孔延伸其中，且该热绝缘体的热绝缘值大于该分隔材料的热绝缘值。该热绝缘体可界定侧壁结构，其包括从该第二电极表面向内倾斜到该第一电极表面的内表面，使得该绝缘过孔在该第一电极的截面面积小于该绝缘过孔在该第二电极的截面面积，在接近第一电极构件处形成紧缩区域的空洞，而该存储材料元件则位于该紧缩区域之中。该存储单元存取层可包括外表面以及导电栓塞，其延伸到该外表面而形成在其下以如半导体衬底上的掺杂区域所形成的多个终端，该栓塞包括栓塞表面，该栓塞表面是形成该外表面的部分；以及位于该栓塞表面至少一部分下的第一电极；其中该栓塞表面的至少一些不平整处由该第一电极所填补。在本文所述的实施例中，该第一电极的电极表面在过孔的区域中是大致平整的，而该实质上平整的表面可利用如化学机械研磨或其它平坦化步骤实现，这些平坦化步骤的目的是用以改良电极表面在沉积该电极材料且进行平坦化之前的平整性。
本发明的第二目的是涉及一种用于制造热绝缘存储元件的方法。存储单元存取层形成在衬底上，该存储单元存取层包括上表面。第一电极层沉积在该上表面上并经过平坦化过程。电极间层沉积在该第一电极层上。过孔生成在该电极间层中。具有开口区域的热绝缘体利用如在过孔的侧壁上形成侧壁结构的方式而形成在该过孔中。存储材料沉积在该开口区域中。第二电极层沉积在该存储材料上并与该存储材料接触。根据某些实施例，该热绝缘层的材料的热绝缘值大于在电极间层所使用的分隔材料的热绝缘值。
本发明的第三目的是涉及填充栓塞表面空洞的存储元件，其包括带有外表面以及延伸到该外表面的导电栓塞的存储单元存取层，该栓塞包括栓塞表面，该栓塞表面是形成该外表面的一部分，该栓塞表面带有瑕疵；以及存储单元层，其接触该存储单元存取层，该存储单元层包括存储单元。该存储单元包括第一与第二电极，其包括彼此相对且分离的电极表面，该第一电极接触该栓塞表面的至少一极大部分；以及存储材料，其电耦接到该电极表面以形成存储材料元件；其中该栓塞表面的瑕疵由该第一电极填补。在某些实施例中，在栓塞表面中的空洞型瑕疵是由形成第一电极的材料进行沉积并经过平整化而得以填补。
本发明的第四目的是涉及一种用于填补半导体元件的导电栓塞的外表面的瑕疵的方法。该方法包括沉积电极在该栓塞的外表面。
本文所述的用于在相变随机存取存储器(phase change randomaccess memory，PCRAM)的存储单元中形成相变元件的方法，可被用来制造其它装置的小型相变元件、连接桥或其它类似结构。
以下是详细说明本发明的结构与方法。本发明内容说明章节目的并非在于限定本发明。本发明由权利要求所限定。所举本发明的实施例、特征、观点及优点等将可通过下列说明、权利要求及附图获得充分了解。
附图说明
图1是根据本发明所制造的相变存储装置的简化截面图；
图2-11是说明用于制造图1所示装置等相变存储装置的方法；
图2是说明在制造图1所述的存储单元存取层的最终步骤；
图3是说明用于沉积第一电极层在图2中的存储单元存取层上的步骤；
图4是说明沉积氧化物层在图3的第一电极上的结果；
图5是示出在图4的氧化物层中所形成的过孔；
图6是说明在图5的过孔中所沉积的热绝缘体；
图7是示出在图6的热绝缘体中的中央开口区域中所沉积的相变材料；
图8是说明在图7的结构上所沉积的第二电极层；
图9是说明在第二电极层上的特定区域形成光刻掩膜的步骤；
图10是说明对图9的结构进行蚀刻的结果；以及
图11是示出在图10中的结构，在经蚀刻区域中沉积氧化物的结果。
【主要元件符号说明】
10      相变存储元件
12      存储单元存取层
16      第一元件
18      第二元件
20      第一栓塞
22      第二栓塞
24      共同源极线
26      介电薄膜层
28      上表面
30，32  空洞
33      上表面
34      第一电极层
36      平坦化表面
38      电极间层
40      过孔
42      热绝缘体
44      开口区域
46      相变材料
47      表面
48      过渡区域
49      相变元件
50      第二电极层
52      平坦化表面
54      掩膜
56      经蚀刻区域
57      第一电极
58      填充物
59      第二电极
60      平坦化表面
61      残留部分电极间层
62     导电材料
64     多个存储单元
具体实施方式
图1是根据本发明实施例所制造的相变存储材料10的简化截面图。元件10广泛地包括形成在衬底上的存储单元存取层以及形成在该存取层上的存储单元层。存取层典型地包括存取晶体管；亦可使用其它类型的存取装置。存取层12包括第一与第二多晶硅字线，其用作第一与第二元件16、18；第一与第二栓塞20、22；以及共同源极线24，上述各个均位于介电薄膜层26中。存储单元位于存储单元存取层的栓塞20上，并包括底电极构件57、热绝缘侧壁结构42、可编程电阻材料元件46以及顶电极构件59。其上的位线结构62耦接到顶电极构件59。
参照图2-11对相变存储元件10及其制造方法进行说明。参照图2，可以看到存储单元存取层12包括一般为平坦的上表面28，该上表面被栓塞20、22中所形成的空洞30以及共同源极线24中的空洞32所截断。空洞30、32或其它表面瑕疵是在用于在小尺寸过孔中形成钨栓塞的沉积过程中所形成的。举例来说，直接在栓塞20、22的上表面33形成沉积相变材料时，可能形成分布问题，亦即在这些装置的操作特征中形成更大的变化性，这是导致空洞30存在的原因。
图3说明了沉积氮化钛(TiN)以形成第一电极层34，并对该层34进行化学机械研磨以形成平坦化表面36。层34的厚度优选为约100到800nm，在平坦化步骤后典型为约500nm。第一电极层34填补了空洞30、32以有效地消除可能由空洞或其它表面瑕疵所导致的分布问题。参见图4，电极间层38沉积在层34上。层38可包括一层以上的电绝缘体，例如二氧化硅或其它化合物，其厚度优选为约40到80nm，在该所示实施例中则典型地为约60nm。参见图5，过孔40典型地以适当的光刻掩膜而形成在电极间层38中，并大体上位于栓塞20、22上的中央，在工艺过程的可容许对准误差内。过孔40包含约与该世代技术节点相仿的直径，亦即约90到150nm，且典型地在光刻特征尺寸为0.13微米的技术节点中为130nm。
热绝缘体42是利用顺形沉积工艺，例如化学气相沉积(CVD)而形成在每一过孔40中。热绝缘体42是比电极间层38的材料更优的热绝缘层，优选是至少10％。因此，热绝缘体42的热导电值κ低于0.014J/cm/K/sec。热绝缘体42的代表性材料包括由下列元素所形成的复合物材料：硅、碳、氧、氟、以及氢。热绝缘性材料的范例是其具有小于0.014J/cm/K/sec的热绝缘值κ，且可用在热绝缘体42中的材料包括SiCOH、聚亚酰胺、聚酰胺、以及氟碳聚合物。其它可用于热绝缘填充层的材料可举例包括：含氟二氧化硅、硅氧烷(silsesquioxane)、聚亚芳香醚(polyarylene ether)、聚对二甲苯(parylene)、含氟聚合物、含氟非晶碳、类金刚石碳、多孔性二氧化硅、中孔性二氧化硅、多孔性硅氧烷(silsesquioxane)、聚亚芳香醚(polyarylene ether)、聚对二甲苯(parylene)、多孔性硅氧烷、多孔性聚亚酰胺以及多孔性聚亚芳香醚。在其它实施例中，该热绝缘结构包括以气体填充的空洞形成在过孔40的壁上。单层或复合层均可提供热绝缘与电绝缘效果。
热绝缘体42优选是以侧壁结构而形成，以生成大体为圆锥状、由上到下、由外到内倾斜的中心开口区域44，如图6所示。开口区域44可包括其它限制形状，例如沙漏型、倒圆锥形、或梯形、或其它种阶梯形状。也可利用形状不变且横截面尺寸适当的形状形成该开口区域，因此不须为紧缩区域。开口区域44的形状可以选作为热绝缘体42沉积过程的沉积步骤的结果；也可控制热绝缘体42的沉积以产生理想、典型为紧缩的开口区域44形状。在沉积热绝缘体42后，也可采取其它制成步骤以生成理想形状的开口区域44。图7说明了在开口区域44中央沉积相变材料46，接着进行化学机械研磨以生成表面47的结果。相变材料46是以热绝缘体42而与层38形成热隔离。热绝缘体42的向下与向内紧缩的形状，在相变材料46中生成了狭窄的过渡区域48，以在区域48处形成相变元件49。相变材料46在表面47处典型地是大约130nm宽，并在过渡区域48处大约为30到70nm宽，典型地为50nm宽。
为了减低相变元件49在大体为结晶态的较低电阻态与大体为非晶态的较高电阻态之间转换所需要的电流，相变元件49在过渡区域48的小尺寸、以及热绝缘体42的使用，二者缺一不可。
图8说明了氮化钛沉积以及化学机械研磨以生成具有平坦表面52的第二电极层50的结果。光刻掩膜54显示在图9中，其位置位于第一与第二栓塞20、22及其相关热绝缘体42以及相变材料46上。图10说明蚀刻步骤的结果，其中第二电极层50的部分、二氧化硅层38、以及第一电极层34中未被掩膜54所覆盖的部分，均根据各层的成分而被以适当的蚀刻配方移除，以生成经蚀刻区域56与第一及第二电极57、59。光刻掩膜54的尺寸使得电极间层38的部分61，在图10的蚀刻后存留在热绝缘体42的周围，以防止热绝缘体42被蚀刻，而这常常是使传统制造过程所导致的习知公差。
图11说明了氧化物填入步骤的结果，其中例如二氧化硅的填充物58沉积在经蚀刻区域56中，重新建构该电极间层58以及各存储单元之间的充填空间，并接着以化学机械研磨而产生平坦化表面60。之后，沉积导电材料62在表面60上，以生成如图1所示的相变存储元件10，其包括多个存储单元64。导电材料62典型地为铜或铝，然而也可以为钨、氮化钛、或其它材料以及各材料的复合物。
所述实施例中的电极57、59优选由氮化钛所构成。虽然其它材料如氮化钽、氮化铝钛、或氮化铝钽等均可被使用，但优选使用氮化钛，因其可与作为相变材料46的GST(后有详述)形成良好的附着面，其是在半导体制造过程中常用的材料，并在相变材料46的相变过渡的高温时(典型地在600到700℃的范围)提供良好的扩散壁垒。栓塞20、22以及共同源极线24典型地由钨构成。
存储单元的实例包括以相变为基础的存储材料，包括以硫属化物为基础的材料以及其它材料。硫属化物包括下列四元素的任一元素：氧(O)、硫(S)、硒(Se)、以及碲(Te)，形成元素周期表上第VI族的部分。硫属化物包括将硫属元素与更为正电性元素或自由基结合而得。硫属化合物合金包括将硫属化合物与其它物质如过渡金属等结合。硫属化合物合金通常包括一个以上选自元素周期表第六栏的元素，例如锗(Ge)以及锡(Sn)。通常，硫属化合物合金包括下列元素中一个以上的复合物：锑(Sb)、镓(Ga)、铟(In)以及银(Ag)。已经在技术文件中描述了许多以相变为基础的存储材料，包括下列合金：镓/锑、铟/锑、铟/硒、锑/碲、锗/碲、锗/锑/碲、铟/锑/碲、镓/硒/碲、锡/锑/碲、铟/锑/锗、银/铟/锑/碲、锗/锡/锑/碲、锗/锑/硒/碲以及碲/锗/锑/硫。在锗/锑/碲合金家族中，可以尝试大范围的合金成分。该成分可以由下列特征式表示：TeaGebSb100-(a+b)。
一位研究员描述了最有用的合金为在沉积材料中所包含的平均碲浓度远低于70％，典型地低于60％，并在一般型态合金中的碲含量范围从最低23％到最高58％，且最优是介于48％到58％之间的碲含量。锗的浓度远高于5％，且其在材料中的平均范围从最低8％到最高30％，一般低于50％。最优地，锗的浓度范围介于8％到40％之间。在该成分中所剩下的主要成分则为锑。上述百分比为原子百分比，其为所有组成元素总和为100％。(Ovshinky‘112专利，栏10～11)。由另一研究者所评估的特殊合金包括Ge2Sb2Te5、GeSb2Te4、以及GeSb4Te7。(Noboru Yamada，“Potential of Ge-Sb-Te Phase-changeOptical Disks for High-Data-Rate Recording”，SPIE v.3109，pp.28-37(1997))。更一般地，过渡金属如铬(Cr)、铁(Fe)、镍(Ni)、铌(Nb)、钯(Pd)、铂(Pt)以及上述的混合物或合金，可与锗/锑/碲结合以形成相变合金，其具有可编程的电阻性质。可使用的存储材料的特殊实例，如Ovshinsky‘112专利中栏11-13所述，其实例在此列入参考。
相变合金可在第一结构态与第二结构态之间切换，其中第一结构态是指该材料大体上为非晶固相，而第二结构态是指该材料大体上为结晶固相。这些合金至少为双稳定的(bistable)。该术语“非晶”是用来指相对较无次序的结构，其较单晶更无次序性，而具有可检测的特征，如比结晶态更高的电阻值。该术语“结晶”是用于指相对较有次序的结构，其较非晶态更有次序，因此包括可检测的特征，例如比非晶态更低的电阻值。典型地，相变材料可电切换到完全结晶态与完全非晶态之间所有可检测的不同状态。其它受到非晶态与结晶态的改变而影响的材料特性包括原子次序、自由电子密度以及活化能。该材料可切换为不同的固态或可切换为由两种以上固态所形成的混合物，提供从非晶态到结晶态之间的灰度级部分。该材料中的电性质也可能随之改变。
利用施加电脉冲，可将相变合金从一种相态切换到另一相态。先前观察指出，较短、较大幅度的脉冲倾向于将相变材料的相态改变成大体为非晶态。较长、较低幅度的脉冲倾向于将相变材料的相态改变成大体为结晶态。较短、较大幅度脉冲中的能量足够大到破坏结晶结构的结合键，同时足够短到可以防止原子再次排列成结晶态。在没有不适当实验的情形下，可以确定特别适用于特定相变合金的适当脉冲量变曲线。在本文中所描述的一种适用于PCRAM中的材料为Ge2Sb2Te5，并通常称为GST。也可使用其它类型的相变材料。
可用于本发明其它实施例中的其它可编程存储材料包括：掺杂N2的GST、GexSby、或其它以不同结晶态转换来决定电阻的物质；PrxCayMnO3、PrSrMnO、ZrOx、或其它使用电脉冲来改变电阻状态物质；TCNQ(7，7，8，8-tetracyanoquinodimethane)、PCBM(methanofullerene 6，6-phenylC61-butyric acid methyl ester)、TCNQ-PCBM、Cu-TCNQ、Ag-TCNQ、C60-TCNQ、以其它物质掺杂的TCNQ、或任何其它聚合物材料，其包括以电脉冲而控制的双稳定或多稳定电阻态。例如，在某些状态下适用的其它类型的存储材料为可变电阻极薄氧化物层。
关于相变随机存取存储装置的制造、元件材料、使用与操作的额外信息，参见美国专利申请案号第11/155,067号“Thin Film Fuse PhaseChange RAM and Manufacturing Method”，申请日为2005年6月17日，代理人案号为MXIC1621-1。
本发明的叙述主要针对相变材料。然而，也可使用其它有时被称为可编程材料的存储材料。如在本发明中所使用的，存储材料为当施加能量时其电性质会发生改变的材料；该改变可为阶段性改变或连续性改变或二者的综合。
虽然已经参照优选实施例对本发明进行了描述，但是本领域技术人员将会了解的是，本发明创造并不受详细描述内容限制。在先前描述中已经建议了替换方式及修改样式，并且本领域技术人员将会考虑其它替换方式及修改样式。特别是，根据本发明的结构与方法，所有实质上具有相同于本发明的构件结合而达成与本发明实质上相同结果的都没有脱离本发明的精神范围。因此，所有这些替换方式及修改样式都落在本发明所附的权利要求及其等价物所界定的范围中。任何在前文中提及的专利申请案以及公开文本，均列为本案的参考。

Claims (18)

1、一种热绝缘存储元件，包括：
存储单元存取层，包括用作终端的多个掺杂区域；以及
存储单元层，其用于与该存储单元存取层耦接，并包括存储单元耦接到与所述这些掺杂区域之一电连接的存取导体，及具有接点表面，该存储单元包括：
第一与第二电极构件，具有彼此相对且分离的电极表面，该第一电极构件接触到该存取导体的该接点表面；
电极间绝缘层，介于该第一与第二电极表面之间，其包括延伸经过介于所述这些电极表面间的该电极间绝缘层的过孔；
位于该过孔中的热绝缘体，其位于该过孔中的侧壁以界定绝缘过孔；以及
可编程电阻材料，其位于该绝缘过孔中，并电耦接到所述这些电极表面。
2、如权利要求1所述的元件，其中，该热绝缘体的热绝缘值(thermal insulation value)大于该电极间层的热绝缘值。
3、如权利要求2所述的元件，其中，该热绝缘体的该热绝缘值大于该电极间层的该热绝缘值至少10％。
4、如权利要求1所述的元件，其中，该电极间层包括二氧化硅。
5、如权利要求1所述的元件，其中，该可编程电阻材料包括相变材料。
6、如权利要求1所述的元件，其中，该热绝缘体位于该过孔的该侧壁的厚度，在接近第一电极处大于接近第二电极处。
7、如权利要求1所述的元件，其中，该热绝缘体界定侧壁结构，其包括从该第二电极的电极表面向内倾斜到该第一电极构件的电极表面的内表面，使得该绝缘过孔在该第一电极的截面面积小于该绝缘过孔在该第二电极的截面面积。
8、如权利要求1所述的元件，其中：
该存取导体包括导电性栓塞，其延伸经过层间介电质并耦接到所述这些掺杂区域之一，该栓塞具有栓塞表面；以及
该第一电极构件叠置在该栓塞表面至少一极大部分上；
其中由该第一电极构件填补该栓塞表面的至少一些不平整处。
9、如权利要求1所述的元件，其中，该第一电极构件的电极表面大致上是平坦的。
10、热绝缘的相变存储元件，其包括：
存储单元存取层，其包括多个用作终端的掺杂区域；以及
存储单元层，其用于与该存储单元存取层耦接，并包括存储单元耦接到与所述这些掺杂区域之一电连接的导电栓塞，该栓塞具有栓塞表面，该存储单元包括：
第一与第二电极构件，具有彼此相对且分离的电极表面，该第一电极构件接触到该导电栓塞的该栓塞表面，并具有大致平坦的电极表面；
电极间绝缘层，其介于该第一与第二电极表面之间，其包括延伸经过介于所述这些电极表面间的该电极间绝缘层的过孔；
位于该过孔中的热绝缘体，位于该过孔中的侧壁上以界定绝缘过孔，其中该热绝缘体界定侧壁结构，其包括从该第二电极的电极表面向内倾斜到该第一电极构件的电极表面的内表面，使得该绝缘过孔在该第一电极的截面面积小于该绝缘过孔在该第二电极的截面面积；以及
相变材料，其位于该绝缘过孔中，并电耦接到所述这些电极表面。
11、一种用于制造热绝缘存储元件的方法，包括下列步骤：
在衬底上形成存储单元存取层，该存储单元存取层包括层间介电质，具有上表面以及多个暴露在该上表面的接点；
沉积大致平整的第一电极层在该上表面并与所述这些接点接触；
沉积电极间绝缘层在该第一电极层上；
在该电极间绝缘层中生成过孔；
在该过孔中形成热绝缘体，并具有开口区域；
沉积存储材料在该开口区域中；
沉积第二电极层在该存储材料上并与该存储材料接触；以及
根据用来界定包括该存储材料在该过孔中且电隔离的存储单元的图形，而蚀刻该第二电极层、该电极间绝缘层、以及该第一电极层。
12、如权利要求11所述的方法，其中，该热绝缘体的热绝缘值大于该电极间绝缘层的热绝缘值。
13、如权利要求12所述的方法，其中，该热绝缘体的热绝缘值大于该电极间绝缘层的热绝缘值至少10％。
14、如权利要求11所述的方法，其中，该存储材料沉积步骤包括，沉积相变材料在该开口区域中。
15、如权利要求11所述的方法，其中，该层间介电质的上表面所露出的该接点，包括栓塞的上端，该栓塞接触到半导体衬底中的掺杂区域。
16、如权利要求15所述的方法，其中，该第一电极层沉积步骤包括，利用该第一电极层填充该栓塞的该上端的不平整处。
17、如权利要求16所述的方法，其中，该过孔生成步骤包括，将该过孔与该栓塞的该上端对准，并延伸该过孔到该第一电极层。
18、如权利要求11所述的方法，其中，该热绝缘体形成步骤包括：形成侧壁结构，其包括从该第二电极层向内倾斜到该第一电极层的内表面，使得该过孔在该第一电极层的截面面积小于该过孔在该第二电极层的截面面积。
CNA200610146335XA 2005-11-15 2006-11-09 热绝缘相变存储元件及其制造方法 Pending CN101013737A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US73672105P 2005-11-15 2005-11-15
US60/736,721 2005-11-15
US11/352,755 2006-02-13

Publications (1)

Publication Number Publication Date
CN101013737A true CN101013737A (zh) 2007-08-08

Family

ID=38076520

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2006101429024A Active CN1967896B (zh) 2005-11-15 2006-11-01 隔离的相变存储器单元及其制造方法
CNA200610146335XA Pending CN101013737A (zh) 2005-11-15 2006-11-09 热绝缘相变存储元件及其制造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2006101429024A Active CN1967896B (zh) 2005-11-15 2006-11-01 隔离的相变存储器单元及其制造方法

Country Status (3)

Country Link
US (4) US7394088B2 (zh)
CN (2) CN1967896B (zh)
TW (2) TWI326120B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807575A (zh) * 2009-02-16 2010-08-18 三星电子株式会社 包括接触塞的半导体器件及相关方法
CN101794735B (zh) * 2008-12-10 2013-10-23 三星电子株式会社 形成接触结构的方法和使用接触结构制造的半导体器件

Families Citing this family (204)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6612695B2 (en) * 2001-11-07 2003-09-02 Michael Waters Lighted reading glasses
US7115927B2 (en) 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7402851B2 (en) * 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US20060108667A1 (en) * 2004-11-22 2006-05-25 Macronix International Co., Ltd. Method for manufacturing a small pin on integrated circuits or other devices
US7598512B2 (en) * 2005-06-17 2009-10-06 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation layer and manufacturing method
US7696503B2 (en) 2005-06-17 2010-04-13 Macronix International Co., Ltd. Multi-level memory cell having phase change element and asymmetrical thermal boundary
KR100637235B1 (ko) * 2005-08-26 2006-10-20 삼성에스디아이 주식회사 플라즈마 디스플레이 패널
US7601995B2 (en) 2005-10-27 2009-10-13 Infineon Technologies Ag Integrated circuit having resistive memory cells
US7394088B2 (en) * 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
US7786460B2 (en) 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7450411B2 (en) * 2005-11-15 2008-11-11 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7635855B2 (en) 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7414258B2 (en) 2005-11-16 2008-08-19 Macronix International Co., Ltd. Spacer electrode small pin phase change memory RAM and manufacturing method
CN100524878C (zh) * 2005-11-21 2009-08-05 旺宏电子股份有限公司 具有空气绝热单元的可编程电阻材料存储阵列
US7829876B2 (en) * 2005-11-21 2010-11-09 Macronix International Co., Ltd. Vacuum cell thermal isolation for a phase change memory device
US7449710B2 (en) 2005-11-21 2008-11-11 Macronix International Co., Ltd. Vacuum jacket for phase change memory element
US7479649B2 (en) * 2005-11-21 2009-01-20 Macronix International Co., Ltd. Vacuum jacketed electrode for phase change memory element
US7599217B2 (en) * 2005-11-22 2009-10-06 Macronix International Co., Ltd. Memory cell device and manufacturing method
US7459717B2 (en) 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7688619B2 (en) 2005-11-28 2010-03-30 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7521364B2 (en) * 2005-12-02 2009-04-21 Macronix Internation Co., Ltd. Surface topology improvement method for plug surface areas
US7531825B2 (en) * 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US8062833B2 (en) 2005-12-30 2011-11-22 Macronix International Co., Ltd. Chalcogenide layer etching method
US7560337B2 (en) * 2006-01-09 2009-07-14 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7741636B2 (en) 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US20070158632A1 (en) * 2006-01-09 2007-07-12 Macronix International Co., Ltd. Method for Fabricating a Pillar-Shaped Phase Change Memory Element
JP4991155B2 (ja) * 2006-01-19 2012-08-01 株式会社東芝 半導体記憶装置
KR100889970B1 (ko) * 2006-01-20 2009-03-24 삼성전자주식회사 상변화 구조물 형성 방법
US7432206B2 (en) * 2006-01-24 2008-10-07 Macronix International Co., Ltd. Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
US7956358B2 (en) 2006-02-07 2011-06-07 Macronix International Co., Ltd. I-shaped phase change memory cell with thermal isolation
US7714315B2 (en) * 2006-02-07 2010-05-11 Qimonda North America Corp. Thermal isolation of phase change memory cells
WO2007099595A1 (ja) * 2006-02-28 2007-09-07 Renesas Technology Corp. 半導体装置およびその製造方法
US9178141B2 (en) * 2006-04-04 2015-11-03 Micron Technology, Inc. Memory elements using self-aligned phase change material layers and methods of manufacturing same
US7345899B2 (en) * 2006-04-07 2008-03-18 Infineon Technologies Ag Memory having storage locations within a common volume of phase change material
US7554144B2 (en) 2006-04-17 2009-06-30 Macronix International Co., Ltd. Memory device and manufacturing method
US8896045B2 (en) * 2006-04-19 2014-11-25 Infineon Technologies Ag Integrated circuit including sidewall spacer
US7928421B2 (en) * 2006-04-21 2011-04-19 Macronix International Co., Ltd. Phase change memory cell with vacuum spacer
US7514705B2 (en) * 2006-04-25 2009-04-07 International Business Machines Corporation Phase change memory cell with limited switchable volume
KR100782482B1 (ko) * 2006-05-19 2007-12-05 삼성전자주식회사 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법
US7423300B2 (en) * 2006-05-24 2008-09-09 Macronix International Co., Ltd. Single-mask phase change memory element
US7473921B2 (en) * 2006-06-07 2009-01-06 International Business Machines Corporation Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
KR100785021B1 (ko) * 2006-06-13 2007-12-11 삼성전자주식회사 Ｃｕ2Ｏ를 포함한 비휘발성 가변 저항 메모리 소자
US7696506B2 (en) 2006-06-27 2010-04-13 Macronix International Co., Ltd. Memory cell with memory material insulation and manufacturing method
US7785920B2 (en) * 2006-07-12 2010-08-31 Macronix International Co., Ltd. Method for making a pillar-type phase change memory element
US7772581B2 (en) * 2006-09-11 2010-08-10 Macronix International Co., Ltd. Memory device having wide area phase change element and small electrode contact area
US7504653B2 (en) 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US8106376B2 (en) * 2006-10-24 2012-01-31 Macronix International Co., Ltd. Method for manufacturing a resistor random access memory with a self-aligned air gap insulator
US7863655B2 (en) 2006-10-24 2011-01-04 Macronix International Co., Ltd. Phase change memory cells with dual access devices
US7476587B2 (en) 2006-12-06 2009-01-13 Macronix International Co., Ltd. Method for making a self-converged memory material element for memory cell
US7682868B2 (en) * 2006-12-06 2010-03-23 Macronix International Co., Ltd. Method for making a keyhole opening during the manufacture of a memory cell
US20080137400A1 (en) * 2006-12-06 2008-06-12 Macronix International Co., Ltd. Phase Change Memory Cell with Thermal Barrier and Method for Fabricating the Same
US7903447B2 (en) * 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
US8344347B2 (en) * 2006-12-15 2013-01-01 Macronix International Co., Ltd. Multi-layer electrode structure
US8017930B2 (en) * 2006-12-21 2011-09-13 Qimonda Ag Pillar phase change memory cell
US7718989B2 (en) 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device
US7433226B2 (en) * 2007-01-09 2008-10-07 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell
US7440315B2 (en) * 2007-01-09 2008-10-21 Macronix International Co., Ltd. Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell
US7663135B2 (en) 2007-01-31 2010-02-16 Macronix International Co., Ltd. Memory cell having a side electrode contact
US7619311B2 (en) * 2007-02-02 2009-11-17 Macronix International Co., Ltd. Memory cell device with coplanar electrode surface and method
US7701759B2 (en) * 2007-02-05 2010-04-20 Macronix International Co., Ltd. Memory cell device and programming methods
US7463512B2 (en) * 2007-02-08 2008-12-09 Macronix International Co., Ltd. Memory element with reduced-current phase change element
US8138028B2 (en) * 2007-02-12 2012-03-20 Macronix International Co., Ltd Method for manufacturing a phase change memory device with pillar bottom electrode
US7884343B2 (en) 2007-02-14 2011-02-08 Macronix International Co., Ltd. Phase change memory cell with filled sidewall memory element and method for fabricating the same
US7956344B2 (en) 2007-02-27 2011-06-07 Macronix International Co., Ltd. Memory cell with memory element contacting ring-shaped upper end of bottom electrode
US7928582B2 (en) * 2007-03-09 2011-04-19 Micron Technology, Inc. Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces
TW200840022A (en) * 2007-03-27 2008-10-01 Ind Tech Res Inst Phase-change memory devices and methods for fabricating the same
US7786461B2 (en) 2007-04-03 2010-08-31 Macronix International Co., Ltd. Memory structure with reduced-size memory element between memory material portions
US8610098B2 (en) * 2007-04-06 2013-12-17 Macronix International Co., Ltd. Phase change memory bridge cell with diode isolation device
US7755076B2 (en) * 2007-04-17 2010-07-13 Macronix International Co., Ltd. 4F2 self align side wall active phase change memory
US8373148B2 (en) * 2007-04-26 2013-02-12 Spansion Llc Memory device with improved performance
TW200847398A (en) * 2007-05-16 2008-12-01 Ind Tech Res Inst Phase-change memory element
KR100881055B1 (ko) * 2007-06-20 2009-01-30 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
US20080316793A1 (en) * 2007-06-22 2008-12-25 Jan Boris Philipp Integrated circuit including contact contacting bottom and sidewall of electrode
US7679074B2 (en) * 2007-06-22 2010-03-16 Qimonda North America Corp. Integrated circuit having multilayer electrode
US8513637B2 (en) * 2007-07-13 2013-08-20 Macronix International Co., Ltd. 4F2 self align fin bottom electrodes FET drive phase change memory
TWI402980B (zh) 2007-07-20 2013-07-21 Macronix Int Co Ltd 具有緩衝層之電阻式記憶結構
US7884342B2 (en) * 2007-07-31 2011-02-08 Macronix International Co., Ltd. Phase change memory bridge cell
US7729161B2 (en) 2007-08-02 2010-06-01 Macronix International Co., Ltd. Phase change memory with dual word lines and source lines and method of operating same
US9018615B2 (en) * 2007-08-03 2015-04-28 Macronix International Co., Ltd. Resistor random access memory structure having a defined small area of electrical contact
US7642125B2 (en) * 2007-09-14 2010-01-05 Macronix International Co., Ltd. Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
US8178386B2 (en) 2007-09-14 2012-05-15 Macronix International Co., Ltd. Phase change memory cell array with self-converged bottom electrode and method for manufacturing
KR101162760B1 (ko) * 2007-10-08 2012-07-05 삼성전자주식회사 상변화 메모리 소자 및 그의 제조방법
US7551473B2 (en) * 2007-10-12 2009-06-23 Macronix International Co., Ltd. Programmable resistive memory with diode structure
US7919766B2 (en) 2007-10-22 2011-04-05 Macronix International Co., Ltd. Method for making self aligning pillar memory cell device
US7804083B2 (en) * 2007-11-14 2010-09-28 Macronix International Co., Ltd. Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
US7646631B2 (en) * 2007-12-07 2010-01-12 Macronix International Co., Ltd. Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
TW200926356A (en) * 2007-12-11 2009-06-16 Ind Tech Res Inst Method for fabricating phase-change memory
US7790524B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures
US7772651B2 (en) * 2008-01-11 2010-08-10 International Business Machines Corporation Semiconductor-on-insulator high-voltage device structures, methods of fabricating such device structures, and design structures for high-voltage circuits
US7786535B2 (en) * 2008-01-11 2010-08-31 International Business Machines Corporation Design structures for high-voltage integrated circuits
US7790543B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures
US7879643B2 (en) 2008-01-18 2011-02-01 Macronix International Co., Ltd. Memory cell with memory element contacting an inverted T-shaped bottom electrode
US7879645B2 (en) * 2008-01-28 2011-02-01 Macronix International Co., Ltd. Fill-in etching free pore device
US7960203B2 (en) 2008-01-29 2011-06-14 International Business Machines Corporation Pore phase change material cell fabricated from recessed pillar
US20090196091A1 (en) * 2008-01-31 2009-08-06 Kau Derchang Self-aligned phase change memory
US8158965B2 (en) 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US8084842B2 (en) 2008-03-25 2011-12-27 Macronix International Co., Ltd. Thermally stabilized electrode structure
KR100979755B1 (ko) * 2008-03-28 2010-09-02 삼성전자주식회사 상변화 메모리 소자 및 그 제조방법들
KR100953960B1 (ko) * 2008-03-28 2010-04-21 삼성전자주식회사 콘택 구조체, 이를 채택하는 반도체 소자 및 그 제조방법들
US8030634B2 (en) * 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US7825398B2 (en) 2008-04-07 2010-11-02 Macronix International Co., Ltd. Memory cell having improved mechanical stability
US7791057B2 (en) 2008-04-22 2010-09-07 Macronix International Co., Ltd. Memory cell having a buried phase change region and method for fabricating the same
US8077505B2 (en) 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
US7701750B2 (en) 2008-05-08 2010-04-20 Macronix International Co., Ltd. Phase change device having two or more substantial amorphous regions in high resistance state
US8415651B2 (en) 2008-06-12 2013-04-09 Macronix International Co., Ltd. Phase change memory cell having top and bottom sidewall contacts
US8134857B2 (en) 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US7932506B2 (en) * 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US7888165B2 (en) 2008-08-14 2011-02-15 Micron Technology, Inc. Methods of forming a phase change material
US7903457B2 (en) 2008-08-19 2011-03-08 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US7834342B2 (en) * 2008-09-04 2010-11-16 Micron Technology, Inc. Phase change material and methods of forming the phase change material
US7719913B2 (en) 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
US8324605B2 (en) 2008-10-02 2012-12-04 Macronix International Co., Ltd. Dielectric mesh isolated phase change structure for phase change memory
US7897954B2 (en) 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
KR101486984B1 (ko) * 2008-10-30 2015-01-30 삼성전자주식회사 가변 저항 메모리 소자 및 그 형성방법
US8097870B2 (en) * 2008-11-05 2012-01-17 Seagate Technology Llc Memory cell with alignment structure
US8036014B2 (en) 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
US8664689B2 (en) 2008-11-07 2014-03-04 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
US8907316B2 (en) 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
KR20100055102A (ko) * 2008-11-17 2010-05-26 삼성전자주식회사 가변 저항 메모리 장치, 그것의 제조 방법, 그리고 그것을 포함하는 메모리 시스템
US7869270B2 (en) 2008-12-29 2011-01-11 Macronix International Co., Ltd. Set algorithm for phase change memory cell
US8089137B2 (en) 2009-01-07 2012-01-03 Macronix International Co., Ltd. Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
US8107283B2 (en) 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8030635B2 (en) 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
US7785978B2 (en) 2009-02-04 2010-08-31 Micron Technology, Inc. Method of forming memory cell using gas cluster ion beams
US8003521B2 (en) * 2009-04-07 2011-08-23 Micron Technology, Inc. Semiconductor processing
US8084760B2 (en) * 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
EP2430112B1 (en) 2009-04-23 2018-09-12 The University of Chicago Materials and methods for the preparation of nanocomposites
US8173987B2 (en) 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8097871B2 (en) 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US7933139B2 (en) 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US7968876B2 (en) 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
US8350316B2 (en) * 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US8809829B2 (en) 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US8238149B2 (en) 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US8363463B2 (en) 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8198619B2 (en) 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US7894254B2 (en) 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US8110822B2 (en) * 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
US8030130B2 (en) 2009-08-14 2011-10-04 International Business Machines Corporation Phase change memory device with plated phase change material
US8012790B2 (en) * 2009-08-28 2011-09-06 International Business Machines Corporation Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
US8283650B2 (en) 2009-08-28 2012-10-09 International Business Machines Corporation Flat lower bottom electrode for phase change memory cell
US8283202B2 (en) 2009-08-28 2012-10-09 International Business Machines Corporation Single mask adder phase change memory element
US20110057161A1 (en) * 2009-09-10 2011-03-10 Gurtej Sandhu Thermally shielded resistive memory element for low programming current
US8064248B2 (en) 2009-09-17 2011-11-22 Macronix International Co., Ltd. 2T2R-1T1R mix mode phase change memory array
US8178387B2 (en) 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
US20110108792A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Single Crystal Phase Change Material
US8129268B2 (en) 2009-11-16 2012-03-06 International Business Machines Corporation Self-aligned lower bottom electrode
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US7943420B1 (en) * 2009-11-25 2011-05-17 International Business Machines Corporation Single mask adder phase change memory element
US8017432B2 (en) * 2010-01-08 2011-09-13 International Business Machines Corporation Deposition of amorphous phase change material
US8729521B2 (en) 2010-05-12 2014-05-20 Macronix International Co., Ltd. Self aligned fin-type programmable memory cell
US8097537B2 (en) 2010-05-25 2012-01-17 Micron Technology, Inc. Phase change memory cell structures and methods
US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
KR101781621B1 (ko) * 2010-12-14 2017-09-26 삼성전자주식회사 저항변화 메모리 소자의 제조 방법
US8497182B2 (en) * 2011-04-19 2013-07-30 Macronix International Co., Ltd. Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
US9882001B2 (en) 2011-05-16 2018-01-30 The University Of Chicago Materials and methods for the preparation of nanocomposites
KR20130013977A (ko) * 2011-07-29 2013-02-06 에스케이하이닉스 주식회사 가변 저항 메모리 장치 및 그 제조 방법
US8871528B2 (en) * 2011-09-30 2014-10-28 HGST Netherlands B.V. Medium patterning method and associated apparatus
US8987700B2 (en) 2011-12-02 2015-03-24 Macronix International Co., Ltd. Thermally confined electrode for programmable resistance memory
US8741772B2 (en) * 2012-02-16 2014-06-03 Intermolecular, Inc. In-situ nitride initiation layer for RRAM metal oxide switching material
CN103682089A (zh) * 2012-09-11 2014-03-26 中国科学院上海微系统与信息技术研究所 高速、高密度、低功耗的相变存储器单元及制备方法
US9012880B2 (en) * 2013-02-21 2015-04-21 Winbond Electronics Corp. Resistance memory device
US8981326B2 (en) 2013-03-05 2015-03-17 International Business Machines Corporation Phase change memory cell with heat shield
US9153777B2 (en) * 2013-06-03 2015-10-06 Micron Technology, Inc. Thermally optimized phase change memory cells and methods of fabricating the same
US9231202B2 (en) * 2013-06-19 2016-01-05 Intel Corporation Thermal-disturb mitigation in dual-deck cross-point memories
CN103500795B (zh) * 2013-09-30 2015-07-22 上海新安纳电子科技有限公司 一种相变存储器电极结构的制备方法
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9336879B2 (en) 2014-01-24 2016-05-10 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9577192B2 (en) * 2014-05-21 2017-02-21 Sony Semiconductor Solutions Corporation Method for forming a metal cap in a semiconductor memory device
US9159412B1 (en) 2014-07-15 2015-10-13 Macronix International Co., Ltd. Staggered write and verify for phase change memory
US9601689B2 (en) * 2014-09-11 2017-03-21 Kabushiki Kaisha Toshiba Memory device
US20160104840A1 (en) * 2014-10-10 2016-04-14 Beth Cook Resistive memory with a thermally insulating region
US9461134B1 (en) 2015-05-20 2016-10-04 Asm Ip Holding B.V. Method for forming source/drain contact structure with chalcogen passivation
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US10490475B2 (en) 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US9741815B2 (en) 2015-06-16 2017-08-22 Asm Ip Holding B.V. Metal selenide and metal telluride thin films for semiconductor device applications
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US9791304B2 (en) 2015-10-21 2017-10-17 Honeywell International Inc. Air data probe heater utilizing low melting point metal
US9659998B1 (en) 2016-06-07 2017-05-23 Macronix International Co., Ltd. Memory having an interlayer insulating structure with different thermal resistance
US9793207B1 (en) 2016-07-20 2017-10-17 International Business Machines Corporation Electrical antifuse including phase change material
WO2018183883A1 (en) * 2017-03-30 2018-10-04 Massachusetts Institute Of Technology Gsst and applications in optical devices
US10719903B2 (en) 2017-12-22 2020-07-21 International Business Machines Corporation On-the fly scheduling of execution of dynamic hardware behaviors
WO2019152593A1 (en) * 2018-01-31 2019-08-08 Massachusetts Institute Of Technology Methods and apparatus for modulating light with phase-change materials
US10937832B2 (en) 2018-06-21 2021-03-02 Macronix International Co., Ltd. 3D memory with confined cell
JP7062545B2 (ja) 2018-07-20 2022-05-06 キオクシア株式会社 記憶素子
US11245073B2 (en) 2018-09-04 2022-02-08 Samsung Electronics Co., Ltd. Switching element, variable resistance memory device, and method of manufacturing the switching element
KR102577244B1 (ko) * 2018-09-04 2023-09-12 삼성전자주식회사 스위칭 소자, 가변 저항 메모리 장치 및 그의 제조방법
US10770656B2 (en) 2018-09-20 2020-09-08 International Business Machines Corporation Method for manufacturing phase change memory
US11404635B2 (en) * 2019-08-29 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Memory stacks and methods of forming the same
CN112864185B (zh) * 2019-11-12 2024-03-12 华邦电子股份有限公司 电桥式随机存取存储器及其制造方法
US11552245B2 (en) * 2020-02-27 2023-01-10 Windbond Electronics Corp. Conductive bridge random access memory and method of manufacturing the same
US11251370B1 (en) 2020-08-12 2022-02-15 International Business Machines Corporation Projected memory device with carbon-based projection component
US11488907B2 (en) 2020-11-30 2022-11-01 Nanya Technology Corporation Semiconductor device with programmable unit and method for fabricating the same
US20220310917A1 (en) * 2021-03-24 2022-09-29 Eugenus, Inc. Encapsulation layer for chalcogenide material
US20230263079A1 (en) * 2022-02-17 2023-08-17 Taiwan Semiconductor Manufacturing Company Limited In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same

Family Cites Families (182)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US732130A (en) * 1898-09-14 1903-06-30 Gen Electric System of control for electrically-propelled trains.
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3530441A (en) * 1969-01-15 1970-09-22 Energy Conversion Devices Inc Method and apparatus for storing and retrieving information
IL61678A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
US4452592A (en) * 1982-06-01 1984-06-05 General Motors Corporation Cyclic phase change coupling
JPS60137070A (ja) 1983-12-26 1985-07-20 Toshiba Corp 半導体装置の製造方法
US4719594A (en) * 1984-11-01 1988-01-12 Energy Conversion Devices, Inc. Grooved optical data storage device including a chalcogenide memory layer
US4876220A (en) * 1986-05-16 1989-10-24 Actel Corporation Method of making programmable low impedance interconnect diode element
JP2685770B2 (ja) * 1987-12-28 1997-12-03 株式会社東芝 不揮発性半導体記憶装置
JP2606857B2 (ja) * 1987-12-10 1997-05-07 株式会社日立製作所 半導体記憶装置の製造方法
US5025220A (en) * 1989-09-21 1991-06-18 Ford Motor Company Continuous measurement of the absolute conductivity of a liquid
US5534712A (en) * 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
JP2825031B2 (ja) 1991-08-06 1998-11-18 日本電気株式会社 半導体メモリ装置
US5166096A (en) * 1991-10-29 1992-11-24 International Business Machines Corporation Process for fabricating self-aligned contact studs for semiconductor structures
JPH05206394A (ja) 1992-01-24 1993-08-13 Mitsubishi Electric Corp 電界効果トランジスタおよびその製造方法
US5958358A (en) 1992-07-08 1999-09-28 Yeda Research And Development Co., Ltd. Oriented polycrystalline thin films of transition metal chalcogenides
JP2884962B2 (ja) * 1992-10-30 1999-04-19 日本電気株式会社 半導体メモリ
US5515488A (en) * 1994-08-30 1996-05-07 Xerox Corporation Method and apparatus for concurrent graphical visualization of a database search and its search history
US5785828A (en) 1994-12-13 1998-07-28 Ricoh Company, Ltd. Sputtering target for producing optical recording medium
US5869843A (en) * 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US5879955A (en) * 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5831276A (en) * 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US5837564A (en) * 1995-11-01 1998-11-17 Micron Technology, Inc. Method for optimal crystallization to obtain high electrical performance from chalcogenides
US5687112A (en) * 1996-04-19 1997-11-11 Energy Conversion Devices, Inc. Multibit single cell memory element having tapered contact
US6025220A (en) * 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US5866928A (en) * 1996-07-16 1999-02-02 Micron Technology, Inc. Single digit line with cell contact interconnect
US5814527A (en) * 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US5789277A (en) * 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5985698A (en) * 1996-07-22 1999-11-16 Micron Technology, Inc. Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US5688713A (en) 1996-08-26 1997-11-18 Vanguard International Semiconductor Corporation Method of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacers
US6147395A (en) 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US6087674A (en) * 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
US5716883A (en) 1996-11-06 1998-02-10 Vanguard International Semiconductor Corporation Method of making increased surface area, storage node electrode, with narrow spaces between polysilicon columns
US6015977A (en) * 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US5933365A (en) 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
US5902704A (en) * 1997-07-02 1999-05-11 Lsi Logic Corporation Process for forming photoresist mask over integrated circuit structures with critical dimension control
US5807786A (en) 1997-07-30 1998-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a barrier layer to protect programmable antifuse structure from damage during fabrication sequence
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US7023009B2 (en) 1997-10-01 2006-04-04 Ovonyx, Inc. Electrically programmable memory element with improved contacts
US6617192B1 (en) * 1997-10-01 2003-09-09 Ovonyx, Inc. Electrically programmable memory element with multi-regioned contact
CA2305648A1 (en) * 1997-10-02 1999-04-15 Martin Marietta Materials, Inc. Method and apparatus for installation of refractory material into a metallurgical vessel
US6087269A (en) 1998-04-20 2000-07-11 Advanced Micro Devices, Inc. Method of making an interconnect using a tungsten hard mask
US6372651B1 (en) * 1998-07-17 2002-04-16 Advanced Micro Devices, Inc. Method for trimming a photoresist pattern line for memory gate etching
US6141260A (en) * 1998-08-27 2000-10-31 Micron Technology, Inc. Single electron resistor memory device and method for use thereof
US6150263A (en) * 1998-11-09 2000-11-21 United Microelectronics Corp. Method of fabricating small dimension wires
US6351406B1 (en) * 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US7157314B2 (en) * 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
JP2000164830A (ja) * 1998-11-27 2000-06-16 Mitsubishi Electric Corp 半導体記憶装置の製造方法
US6291137B1 (en) 1999-01-20 2001-09-18 Advanced Micro Devices, Inc. Sidewall formation for sidewall patterning of sub 100 nm structures
DE19903325B4 (de) 1999-01-28 2004-07-22 Heckler & Koch Gmbh Verriegelter Verschluß für eine Selbstlade-Handfeuerwaffe, mit einem Verschlußkopf und Verschlußträger und einem federnden Sperring mit Längsschlitz
US6245669B1 (en) 1999-02-05 2001-06-12 Taiwan Semiconductor Manufacturing Company High selectivity Si-rich SiON etch-stop layer
EP1171920B1 (en) 1999-03-25 2006-11-29 OVONYX Inc. Electrically programmable memory element with improved contacts
US6750079B2 (en) * 1999-03-25 2004-06-15 Ovonyx, Inc. Method for making programmable resistance memory element
US6177317B1 (en) * 1999-04-14 2001-01-23 Macronix International Co., Ltd. Method of making nonvolatile memory devices having reduced resistance diffusion regions
US6075719A (en) 1999-06-22 2000-06-13 Energy Conversion Devices, Inc. Method of programming phase-change memory element
US6077674A (en) 1999-10-27 2000-06-20 Agilent Technologies Inc. Method of producing oligonucleotide arrays with features of high purity
US6326307B1 (en) 1999-11-15 2001-12-04 Appllied Materials, Inc. Plasma pretreatment of photoresist in an oxide etch process
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US6576546B2 (en) * 1999-12-22 2003-06-10 Texas Instruments Incorporated Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
TW586154B (en) * 2001-01-05 2004-05-01 Macronix Int Co Ltd Planarization method for semiconductor device
US6420216B1 (en) * 2000-03-14 2002-07-16 International Business Machines Corporation Fuse processing using dielectric planarization pillars
US6420215B1 (en) * 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US6501111B1 (en) * 2000-06-30 2002-12-31 Intel Corporation Three-dimensional (3D) programmable device
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
US6563156B2 (en) * 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6339544B1 (en) * 2000-09-29 2002-01-15 Intel Corporation Method to enhance performance of thermal resistor device
US6555860B2 (en) * 2000-09-29 2003-04-29 Intel Corporation Compositionally modified resistive electrode
US6567293B1 (en) * 2000-09-29 2003-05-20 Ovonyx, Inc. Single level metal memory cell using chalcogenide cladding
US6429064B1 (en) * 2000-09-29 2002-08-06 Intel Corporation Reduced contact area of sidewall conductor
US6569705B2 (en) * 2000-12-21 2003-05-27 Intel Corporation Metal structure for a phase-change memory device
US6271090B1 (en) * 2000-12-22 2001-08-07 Macronix International Co., Ltd. Method for manufacturing flash memory device with dual floating gates and two bits per cell
TW490675B (en) * 2000-12-22 2002-06-11 Macronix Int Co Ltd Control method of multi-stated NROM
US6627530B2 (en) * 2000-12-22 2003-09-30 Matrix Semiconductor, Inc. Patterning three dimensional structures
US6534781B2 (en) * 2000-12-26 2003-03-18 Ovonyx, Inc. Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
US6487114B2 (en) * 2001-02-28 2002-11-26 Macronix International Co., Ltd. Method of reading two-bit memories of NROM cell
US6596589B2 (en) 2001-04-30 2003-07-22 Vanguard International Semiconductor Corporation Method of manufacturing a high coupling ratio stacked gate flash memory with an HSG-SI layer
US6730928B2 (en) 2001-05-09 2004-05-04 Science Applications International Corporation Phase change switches and circuits coupling to electromagnetic waves containing phase change switches
US6514788B2 (en) * 2001-05-29 2003-02-04 Bae Systems Information And Electronic Systems Integration Inc. Method for manufacturing contacts for a Chalcogenide memory device
US6613604B2 (en) * 2001-08-02 2003-09-02 Ovonyx, Inc. Method for making small pore for use in programmable resistance memory element
US6589714B2 (en) * 2001-06-26 2003-07-08 Ovonyx, Inc. Method for making programmable resistance memory element using silylated photoresist
US6673700B2 (en) * 2001-06-30 2004-01-06 Ovonyx, Inc. Reduced area intersection between electrode and programming element
US6605527B2 (en) * 2001-06-30 2003-08-12 Intel Corporation Reduced area intersection between electrode and programming element
US6511867B2 (en) * 2001-06-30 2003-01-28 Ovonyx, Inc. Utilizing atomic layer deposition for programmable device
US6489645B1 (en) 2001-07-03 2002-12-03 Matsushita Electric Industrial Co., Ltd. Integrated circuit device including a layered superlattice material with an interface buffer layer
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6737312B2 (en) * 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6709958B2 (en) 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US6507061B1 (en) 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
US6586761B2 (en) * 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US6861267B2 (en) * 2001-09-17 2005-03-01 Intel Corporation Reducing shunts in memories with phase-change material
US6566700B2 (en) * 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
US6800563B2 (en) * 2001-10-11 2004-10-05 Ovonyx, Inc. Forming tapered lower electrode phase-change memories
TW518719B (en) 2001-10-26 2003-01-21 Promos Technologies Inc Manufacturing method of contact plug
US6545903B1 (en) * 2001-12-17 2003-04-08 Texas Instruments Incorporated Self-aligned resistive plugs for forming memory cell with phase change material
US6512241B1 (en) * 2001-12-31 2003-01-28 Intel Corporation Phase change material memory device
US6867638B2 (en) * 2002-01-10 2005-03-15 Silicon Storage Technology, Inc. High voltage generation and regulation system for digital multilevel nonvolatile memory
JP3796457B2 (ja) * 2002-02-28 2006-07-12 富士通株式会社 不揮発性半導体記憶装置
CN100514695C (zh) * 2002-03-15 2009-07-15 阿克松技术公司 微电子可编程构件
US6579760B1 (en) * 2002-03-28 2003-06-17 Macronix International Co., Ltd. Self-aligned, programmable phase change memory
WO2003085740A1 (fr) * 2002-04-09 2003-10-16 Matsushita Electric Industrial Co., Ltd. Memoire non volatile et procede de fabrication
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US6605821B1 (en) * 2002-05-10 2003-08-12 Hewlett-Packard Development Company, L.P. Phase change material electronic memory structure and method for forming
US6864503B2 (en) 2002-08-09 2005-03-08 Macronix International Co., Ltd. Spacer chalcogenide memory method and device
US6850432B2 (en) 2002-08-20 2005-02-01 Macronix International Co., Ltd. Laser programmable electrically readable phase-change memory method and device
JP4133141B2 (ja) * 2002-09-10 2008-08-13 株式会社エンプラス 電気部品用ソケット
JP4190238B2 (ja) 2002-09-13 2008-12-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6992932B2 (en) 2002-10-29 2006-01-31 Saifun Semiconductors Ltd Method circuit and system for read error detection in a non-volatile memory array
JP4928045B2 (ja) 2002-10-31 2012-05-09 大日本印刷株式会社 相変化型メモリ素子およびその製造方法
US6805583B2 (en) * 2002-12-06 2004-10-19 Randall A. Holliday Mini-coax cable connector and method of installation
US6744088B1 (en) * 2002-12-13 2004-06-01 Intel Corporation Phase change memory device on a planar composite layer
US6791102B2 (en) * 2002-12-13 2004-09-14 Intel Corporation Phase change memory
US6815266B2 (en) 2002-12-30 2004-11-09 Bae Systems Information And Electronic Systems Integration, Inc. Method for manufacturing sidewall contacts for a chalcogenide memory device
KR100486306B1 (ko) * 2003-02-24 2005-04-29 삼성전자주식회사 셀프 히터 구조를 가지는 상변화 메모리 소자
US7067865B2 (en) * 2003-06-06 2006-06-27 Macronix International Co., Ltd. High density chalcogenide memory cells
US6838692B1 (en) * 2003-06-23 2005-01-04 Macronix International Co., Ltd. Chalcogenide memory device with multiple bits per cell
JP2005032855A (ja) 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその製造方法
KR100615586B1 (ko) * 2003-07-23 2006-08-25 삼성전자주식회사 다공성 유전막 내에 국부적인 상전이 영역을 구비하는상전이 메모리 소자 및 그 제조 방법
US7893419B2 (en) 2003-08-04 2011-02-22 Intel Corporation Processing phase change material to improve programming speed
US6927410B2 (en) * 2003-09-04 2005-08-09 Silicon Storage Technology, Inc. Memory device with discrete layers of phase change memory material
US6815704B1 (en) * 2003-09-04 2004-11-09 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids
DE10345455A1 (de) 2003-09-30 2005-05-04 Infineon Technologies Ag Verfahren zum Erzeugen einer Hartmaske und Hartmasken-Anordnung
US6910907B2 (en) * 2003-11-18 2005-06-28 Agere Systems Inc. Contact for use in an integrated circuit and a method of manufacture therefor
US7485891B2 (en) 2003-11-20 2009-02-03 International Business Machines Corporation Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory
US6937507B2 (en) * 2003-12-05 2005-08-30 Silicon Storage Technology, Inc. Memory device and method of operating same
US7265050B2 (en) 2003-12-12 2007-09-04 Samsung Electronics Co., Ltd. Methods for fabricating memory devices using sacrificial layers
KR100569549B1 (ko) * 2003-12-13 2006-04-10 주식회사 하이닉스반도체 상 변화 저항 셀 및 이를 이용한 불휘발성 메모리 장치
US7038230B2 (en) * 2004-01-06 2006-05-02 Macronix Internation Co., Ltd. Horizontal chalcogenide element defined by a pad for use in solid-state memories
JP4124743B2 (ja) 2004-01-21 2008-07-23 株式会社ルネサステクノロジ 相変化メモリ
KR100564608B1 (ko) 2004-01-29 2006-03-28 삼성전자주식회사 상변화 메모리 소자
US6936840B2 (en) * 2004-01-30 2005-08-30 International Business Machines Corporation Phase-change memory cell and method of fabricating the phase-change memory cell
JP4529493B2 (ja) 2004-03-12 2010-08-25 株式会社日立製作所 半導体装置
KR100598100B1 (ko) * 2004-03-19 2006-07-07 삼성전자주식회사 상변환 기억 소자의 제조방법
DE102004014487A1 (de) 2004-03-24 2005-11-17 Infineon Technologies Ag Speicherbauelement mit in isolierendes Material eingebettetem, aktiven Material
US6977181B1 (en) * 2004-06-17 2005-12-20 Infincon Technologies Ag MTJ stack with crystallization inhibiting layer
US7359231B2 (en) * 2004-06-30 2008-04-15 Intel Corporation Providing current for phase change memories
US7365385B2 (en) * 2004-08-30 2008-04-29 Micron Technology, Inc. DRAM layout with vertical FETs and method of formation
US7364935B2 (en) * 2004-10-29 2008-04-29 Macronix International Co., Ltd. Common word line edge contact phase-change memory
US20060108667A1 (en) 2004-11-22 2006-05-25 Macronix International Co., Ltd. Method for manufacturing a small pin on integrated circuits or other devices
US7202493B2 (en) * 2004-11-30 2007-04-10 Macronix International Co., Inc. Chalcogenide memory having a small active region
KR100827653B1 (ko) 2004-12-06 2008-05-07 삼성전자주식회사 상변화 기억 셀들 및 그 제조방법들
US7220983B2 (en) 2004-12-09 2007-05-22 Macronix International Co., Ltd. Self-aligned small contact phase-change memory method and device
JP4646634B2 (ja) * 2005-01-05 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
US7348590B2 (en) 2005-02-10 2008-03-25 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
US7214958B2 (en) * 2005-02-10 2007-05-08 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
US7166533B2 (en) 2005-04-08 2007-01-23 Infineon Technologies, Ag Phase change memory cell defined by a pattern shrink material process
KR100668846B1 (ko) * 2005-06-10 2007-01-16 주식회사 하이닉스반도체 상변환 기억 소자의 제조방법
US7321130B2 (en) 2005-06-17 2008-01-22 Macronix International Co., Ltd. Thin film fuse phase change RAM and manufacturing method
US7534647B2 (en) 2005-06-17 2009-05-19 Macronix International Co., Ltd. Damascene phase change RAM and manufacturing method
US7514288B2 (en) 2005-06-17 2009-04-07 Macronix International Co., Ltd. Manufacturing methods for thin film fuse phase change ram
US7238994B2 (en) 2005-06-17 2007-07-03 Macronix International Co., Ltd. Thin film plate phase change ram circuit and manufacturing method
US7345907B2 (en) * 2005-07-11 2008-03-18 Sandisk 3D Llc Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements
US20070037101A1 (en) 2005-08-15 2007-02-15 Fujitsu Limited Manufacture method for micro structure
US20070045606A1 (en) 2005-08-30 2007-03-01 Michele Magistretti Shaping a phase change layer in a phase change memory cell
US7417245B2 (en) * 2005-11-02 2008-08-26 Infineon Technologies Ag Phase change memory having multilayer thermal insulation
US7397060B2 (en) 2005-11-14 2008-07-08 Macronix International Co., Ltd. Pipe shaped phase change memory
US20070111429A1 (en) 2005-11-14 2007-05-17 Macronix International Co., Ltd. Method of manufacturing a pipe shaped phase change memory
US7450411B2 (en) * 2005-11-15 2008-11-11 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7394088B2 (en) * 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
US7786460B2 (en) * 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7635855B2 (en) * 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7414258B2 (en) * 2005-11-16 2008-08-19 Macronix International Co., Ltd. Spacer electrode small pin phase change memory RAM and manufacturing method
US7507986B2 (en) * 2005-11-21 2009-03-24 Macronix International Co., Ltd. Thermal isolation for an active-sidewall phase change memory cell
US7599217B2 (en) * 2005-11-22 2009-10-06 Macronix International Co., Ltd. Memory cell device and manufacturing method
US7459717B2 (en) * 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7351648B2 (en) * 2006-01-19 2008-04-01 International Business Machines Corporation Methods for forming uniform lithographic features
US7956358B2 (en) * 2006-02-07 2011-06-07 Macronix International Co., Ltd. I-shaped phase change memory cell with thermal isolation
TWI297948B (en) * 2006-06-26 2008-06-11 Ind Tech Res Inst Phase change memory device and fabrications thereof
US7663909B2 (en) * 2006-07-10 2010-02-16 Qimonda North America Corp. Integrated circuit having a phase change memory cell including a narrow active region width
US7785920B2 (en) * 2006-07-12 2010-08-31 Macronix International Co., Ltd. Method for making a pillar-type phase change memory element
US7542338B2 (en) * 2006-07-31 2009-06-02 Sandisk 3D Llc Method for reading a multi-level passive element memory cell array
US7684225B2 (en) * 2006-10-13 2010-03-23 Ovonyx, Inc. Sequential and video access for non-volatile memory arrays
US20080101110A1 (en) * 2006-10-25 2008-05-01 Thomas Happ Combined read/write circuit for memory
US7569844B2 (en) * 2007-04-17 2009-08-04 Macronix International Co., Ltd. Memory cell sidewall contacting side electrode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101794735B (zh) * 2008-12-10 2013-10-23 三星电子株式会社 形成接触结构的方法和使用接触结构制造的半导体器件
CN101807575A (zh) * 2009-02-16 2010-08-18 三星电子株式会社 包括接触塞的半导体器件及相关方法
CN101807575B (zh) * 2009-02-16 2014-10-01 三星电子株式会社 包括接触塞的半导体器件及相关方法

Also Published As

Publication number Publication date
US20080166875A1 (en) 2008-07-10
TWI326120B (en) 2010-06-11
TW200719435A (en) 2007-05-16
US7471555B2 (en) 2008-12-30
CN1967896A (zh) 2007-05-23
TWI315576B (en) 2009-10-01
US20070108430A1 (en) 2007-05-17
US7642123B2 (en) 2010-01-05
TW200802804A (en) 2008-01-01
US7932101B2 (en) 2011-04-26
US7394088B2 (en) 2008-07-01
CN1967896B (zh) 2010-05-12
US20070109836A1 (en) 2007-05-17
US20080268565A1 (en) 2008-10-30

Similar Documents

Publication Publication Date Title
CN101013737A (zh) 热绝缘相变存储元件及其制造方法
CN100555699C (zh) 双稳态电阻随机存取存储器的结构与方法
US7842536B2 (en) Vacuum jacket for phase change memory element
US7507986B2 (en) Thermal isolation for an active-sidewall phase change memory cell
CN100544016C (zh) 具有绝热衬垫的薄膜保险丝相变化单元及其制造方法
US7910907B2 (en) Manufacturing method for pipe-shaped electrode phase change memory
CN102097587B (zh) 具有宽广相变化元素与小面积电极接点的存储器装置
US7928421B2 (en) Phase change memory cell with vacuum spacer
CN100573952C (zh) 使用单一接触结构的桥路电阻随机存取存储元件及方法
CN101197317B (zh) 具有热障的相变化存储单元及其制造方法
CN100573898C (zh) 自对准并平坦化的下电极相变化存储器及其制造方法
US7479649B2 (en) Vacuum jacketed electrode for phase change memory element
CN101237026B (zh) 一种存储装置及其制造方法
CN101013736A (zh) 管型相变存储器
CN101009211A (zh) 一种以自对准方式制造薄膜熔丝相变化随机存取存储器的方法
CN101783390A (zh) 具有改善结构稳定性的存储单元及其制造方法
CN100583483C (zh) 相变化存储单元及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20070808