CN100573716C - 双存储单元读取和写入方法 - Google Patents
双存储单元读取和写入方法 Download PDFInfo
- Publication number
- CN100573716C CN100573716C CNB028022521A CN02802252A CN100573716C CN 100573716 C CN100573716 C CN 100573716C CN B028022521 A CNB028022521 A CN B028022521A CN 02802252 A CN02802252 A CN 02802252A CN 100573716 C CN100573716 C CN 100573716C
- Authority
- CN
- China
- Prior art keywords
- storage unit
- voltage
- programmed
- bit line
- enough
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
Landscapes
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/871,332 US6493269B1 (en) | 2001-05-31 | 2001-05-31 | Dual cell reading and writing technique |
US09/871,332 | 2001-05-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1592936A CN1592936A (zh) | 2005-03-09 |
CN100573716C true CN100573716C (zh) | 2009-12-23 |
Family
ID=25357215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028022521A Expired - Lifetime CN100573716C (zh) | 2001-05-31 | 2002-05-29 | 双存储单元读取和写入方法 |
Country Status (10)
Country | Link |
---|---|
US (2) | US6493269B1 (zh) |
EP (2) | EP1860661A1 (zh) |
JP (1) | JP5254520B2 (zh) |
KR (1) | KR100906751B1 (zh) |
CN (1) | CN100573716C (zh) |
AT (1) | ATE493734T1 (zh) |
AU (1) | AU2002257334A1 (zh) |
DE (1) | DE60238769D1 (zh) |
TW (1) | TW578156B (zh) |
WO (1) | WO2002097820A2 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US6795349B2 (en) * | 2002-02-28 | 2004-09-21 | Sandisk Corporation | Method and system for efficiently reading and programming of dual cell memory elements |
US6775187B1 (en) * | 2003-04-24 | 2004-08-10 | Advanced Micro Devices, Inc. | Method of programming a dual cell memory device |
US6950348B2 (en) * | 2003-06-20 | 2005-09-27 | Sandisk Corporation | Source controlled operation of non-volatile memories |
US7082490B2 (en) * | 2003-10-20 | 2006-07-25 | Atmel Corporation | Method and system for enhancing the endurance of memory cells |
JP2005302850A (ja) * | 2004-04-08 | 2005-10-27 | Renesas Technology Corp | 半導体記憶装置 |
DE102004024552B3 (de) * | 2004-05-18 | 2005-12-08 | Infineon Technologies Ag | Speicherzellenanordnung mit einer Doppel-Speicherzelle |
FR2881565B1 (fr) * | 2005-02-03 | 2007-08-24 | Atmel Corp | Circuits de selection de ligne binaire pour memoires non volatiles |
JP4916785B2 (ja) * | 2006-06-22 | 2012-04-18 | シャープ株式会社 | 半導体記憶装置及びこれを備えた電子機器 |
KR100836762B1 (ko) * | 2006-12-11 | 2008-06-10 | 삼성전자주식회사 | 멀티 비트 플래시 메모리 장치 및 그것의 프로그램 방법 |
US8429493B2 (en) | 2007-05-12 | 2013-04-23 | Apple Inc. | Memory device with internal signap processing unit |
US8130556B2 (en) | 2008-10-30 | 2012-03-06 | Sandisk Technologies Inc. | Pair bit line programming to improve boost voltage clamping |
KR101518039B1 (ko) | 2008-12-08 | 2015-05-07 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
US8179708B2 (en) * | 2009-02-18 | 2012-05-15 | Atmel Corporation | Anti-cross-talk circuitry for ROM arrays |
CN110232942B (zh) * | 2013-09-13 | 2023-01-03 | 铠侠股份有限公司 | 存储装置及其控制方法 |
KR102511902B1 (ko) * | 2016-04-11 | 2023-03-20 | 에스케이하이닉스 주식회사 | 리드 디스터브가 억제되는 불휘발성 메모리 소자 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5576992A (en) * | 1995-08-30 | 1996-11-19 | Texas Instruments Incorporated | Extended-life method for soft-programming floating-gate memory cells |
CN1236955A (zh) * | 1998-05-22 | 1999-12-01 | 国际商业机器公司 | 多端口随机存取存储器的整体布线管理装置与方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61137299A (ja) * | 1984-12-07 | 1986-06-24 | Hitachi Ltd | イレ−ザル・プログラマブルrom |
JP2537264B2 (ja) * | 1988-04-13 | 1996-09-25 | 株式会社東芝 | 半導体記憶装置 |
US5095344A (en) | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US4992980A (en) * | 1989-08-07 | 1991-02-12 | Intel Corporation | Novel architecture for virtual ground high-density EPROMS |
US5258949A (en) * | 1990-12-03 | 1993-11-02 | Motorola, Inc. | Nonvolatile memory with enhanced carrier generation and method for programming the same |
JP3720358B2 (ja) * | 1991-08-29 | 2005-11-24 | ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド | 自己整列デュアルビット分割ゲートフラッシュeepromセル |
US5313421A (en) | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US5712180A (en) | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
US5587949A (en) * | 1995-04-27 | 1996-12-24 | National Semiconductor Corporation | Method for programming an ETOX EPROM or flash memory when cells of the array are formed to store multiple bits of data |
US5703808A (en) * | 1996-02-21 | 1997-12-30 | Motorola, Inc. | Non-volatile memory cell and method of programming |
JPH1131801A (ja) * | 1996-12-27 | 1999-02-02 | Sanyo Electric Co Ltd | トランジスタ、トランジスタアレイ、半導体メモリおよびトランジスタアレイの製造方法 |
US6151248A (en) | 1999-06-30 | 2000-11-21 | Sandisk Corporation | Dual floating gate EEPROM cell array with steering gates shared by adjacent cells |
-
2001
- 2001-05-31 US US09/871,332 patent/US6493269B1/en not_active Expired - Lifetime
-
2002
- 2002-05-28 TW TW091111334A patent/TW578156B/zh not_active IP Right Cessation
- 2002-05-29 CN CNB028022521A patent/CN100573716C/zh not_active Expired - Lifetime
- 2002-05-29 EP EP07018060A patent/EP1860661A1/en not_active Withdrawn
- 2002-05-29 JP JP2003500917A patent/JP5254520B2/ja not_active Expired - Fee Related
- 2002-05-29 EP EP02726938A patent/EP1410395B1/en not_active Expired - Lifetime
- 2002-05-29 AU AU2002257334A patent/AU2002257334A1/en not_active Abandoned
- 2002-05-29 AT AT02726938T patent/ATE493734T1/de not_active IP Right Cessation
- 2002-05-29 WO PCT/US2002/016835 patent/WO2002097820A2/en active Application Filing
- 2002-05-29 KR KR1020037001364A patent/KR100906751B1/ko not_active IP Right Cessation
- 2002-05-29 DE DE60238769T patent/DE60238769D1/de not_active Expired - Lifetime
- 2002-12-04 US US10/310,533 patent/US20030117854A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5576992A (en) * | 1995-08-30 | 1996-11-19 | Texas Instruments Incorporated | Extended-life method for soft-programming floating-gate memory cells |
CN1236955A (zh) * | 1998-05-22 | 1999-12-01 | 国际商业机器公司 | 多端口随机存取存储器的整体布线管理装置与方法 |
Also Published As
Publication number | Publication date |
---|---|
AU2002257334A1 (en) | 2002-12-09 |
KR20030020950A (ko) | 2003-03-10 |
KR100906751B1 (ko) | 2009-07-09 |
US20030117854A1 (en) | 2003-06-26 |
US6493269B1 (en) | 2002-12-10 |
DE60238769D1 (de) | 2011-02-10 |
WO2002097820A3 (en) | 2004-02-19 |
ATE493734T1 (de) | 2011-01-15 |
CN1592936A (zh) | 2005-03-09 |
EP1410395B1 (en) | 2010-12-29 |
EP1410395A2 (en) | 2004-04-21 |
JP5254520B2 (ja) | 2013-08-07 |
WO2002097820A2 (en) | 2002-12-05 |
US20020181286A1 (en) | 2002-12-05 |
JP2004528720A (ja) | 2004-09-16 |
TW578156B (en) | 2004-03-01 |
EP1860661A1 (en) | 2007-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100573716C (zh) | 双存储单元读取和写入方法 | |
CN100576358C (zh) | 对存储器进行的锁存编程及方法 | |
EP0606650B1 (en) | Nonvolatile semiconductor memory device | |
JP4503809B2 (ja) | 半導体記憶装置 | |
CN1329915C (zh) | 非易失性存储器中的导引门和位线分隔 | |
US5668758A (en) | Decoded wordline driver with positive and negative voltage modes | |
US6958940B2 (en) | Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array | |
CN102341865A (zh) | Nand闪存装置的编程方法 | |
KR20080111921A (ko) | 반도체 메모리 장치 | |
JP2000236031A (ja) | 不揮発性半導体記憶装置 | |
KR100625590B1 (ko) | 비휘발성 반도체 기억 장치, 및 그것을 포함하는 액정표시 장치 | |
CN106683700B (zh) | 非易失性半导体存储装置及其擦除方法 | |
CN100573719C (zh) | 半导体器件及写入方法 | |
JPH06291332A (ja) | 半導体記憶装置及びその使用方法 | |
KR100639827B1 (ko) | Eeprom 응용을 위한 1 트랜지스터 셀 | |
CN1692450B (zh) | 非易失性存储器及其写入方法 | |
JP3419969B2 (ja) | 不揮発性半導体記憶装置 | |
CN103177758A (zh) | 半导体存储装置 | |
CN106611618A (zh) | 非易失性半导体存储装置 | |
JP2725564B2 (ja) | 半導体記憶装置及びそのデータ書込み方法 | |
CN102376367B (zh) | 于一存储集成电路上进行擦除操作的方法与装置 | |
JPH10275484A (ja) | 不揮発性半導体記憶装置 | |
EP1065669A2 (en) | High-density NOR-type flash memory device and programming method therefor | |
KR20030009289A (ko) | 3층 금속 상호연결을 적용한 플래시 메모리 구조 | |
JPH11306771A (ja) | 半導体メモリ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120327 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120327 Address after: Texas, USA Patentee after: Sandisk Corp. Address before: California, USA Patentee before: Sandisk Corp. |
|
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Texas, USA Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: Texas, USA Patentee before: Sandisk Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20091223 |
|
CX01 | Expiry of patent term |