CN100550331C - Spiral contactor and manufacturing - Google Patents

Spiral contactor and manufacturing Download PDF

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Publication number
CN100550331C
CN100550331C CNB2004100909932A CN200410090993A CN100550331C CN 100550331 C CN100550331 C CN 100550331C CN B2004100909932 A CNB2004100909932 A CN B2004100909932A CN 200410090993 A CN200410090993 A CN 200410090993A CN 100550331 C CN100550331 C CN 100550331C
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China
Prior art keywords
spiral
metal coating
probe
resist
contactor
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CNB2004100909932A
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Chinese (zh)
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CN1607653A (en
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平井幸广
上田千寿
吉田光一
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日本先进装置株式会社
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
    • H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R33/00—Coupling devices specially adapted for supporting apparatus and having one part acting as a holder providing support and electrical connection via a counterpart which is structurally associated with the apparatus, e.g. lamp holders; Separate parts thereof
    • H01R33/74—Devices having four or more poles, e.g. holders for compact fluorescent lamps
    • H01R33/76—Holders with sockets, clips, or analogous contacts adapted for axially-sliding engagement with parallely-arranged pins, blades, or analogous contacts on counterpart, e.g. electronic tube socket
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Abstract

The invention provides a kind of spiral contactor 1, it is characterized in that comprising with semiconductor device or electronic component with soldered ball and electrically connect, be seen as spiral spiral probe 2 with having to overlook, be connected with protruding soldered ball and when extending along with the shape of this spiral probe when weld probe on the dielectric base is connected.Can provide a spiral contactor, semiconductor device (test socket, test board, detecting card) and electronic component (embedded slot, embedded type connector) can be applied to carry chip to encapsulation, ultra micro from the small semiconductor device, can not cause soft weld probe distortion to form the current-carrying circuit or break but also be applied to wafer, and can be applied to closeization of soldered ball, and the detection of reasonable price and high-reliability is provided.

Description

Spiral contactor and manufacturing
Technical field
The present invention includes electron helical contactor, required semiconductor detector and soldered ball contact (solder-ball-contact) semiconductor or other and form the notion of the electronic installation that sphere formula (spherical-ball) electrically connects.
Background technology
Along with the increase in demand of bigger density and improve semiconductor integrated circuit (IC), be equipped with one or above IC chip the demand of performance of the IC encapsulation (being designated hereinafter simply as " encapsulation ") of (below be called " semiconductor device "), this innovation thinking allows a kind of more advanced developing stage in multiple mode.The microminiaturization (thinning) that one of said method comprises owing to real contact area makes pin (pin) number increase (greater density).Utilize this new technology to increase the density of input and lead-out terminal, can obtain the encapsulation of tool 1000 number of pins.Therefore, this new method (owing to reduce size) also will change current feed and connect, its from the top and bottom or comprehensive leading into the connection of single bottom formula (bottom-only) lead-in wire further reduce the overall size that encapsulates.
Therefore, if arrange with BGA (ball grid array (Ball Grid Array)) contactor the whole bottom of semiconductor device, then it can be greater than encapsulation itself, or utilize slightly different method CSP (chip size packages (Chip Size Package)), have its size of soldered ball (replacement pin) of arranging and be a bit larger tham practical semiconductor device itself, thereby increase density by utilizing these soldered balls can make spacing be reduced to 0.5mm from 0.8mm with lattice structure.
And weld probe reaches further microminiaturization of shorter permission and closeization and improves electrical conduction than traditional probe is lighter, thinner, but will determine to possess above-mentioned characteristic, also needs to be used for the special detection device of said new method.Current semiconductor detector utilizes needle-like (needle-like) probe or metering reader (meter reader) to finish the outer electrode lead on Electronic Testing and the physics formula contact semiconductor device and measure its electrical characteristics by an electric current that passes the semiconductor device of each.This semiconductor detection method is commonly referred to as that wafer is surveyed and currently is used for measuring and confirms whether semiconductor device is up to specification.Many devices all are embedded in the grating structure on the wafer surface and general use can comprise the detecting card of hundreds of or more standalone probe pin, in order to measure one or more devices simultaneously, but because the restriction of the microminiaturization of the size of detecting card and current detecting card technology, can't once finish the measurement of entire wafer, this measurement must over and over again repeat to move the platform of placement wafer to allow the complete test of all devices on the entire wafer.Yet, when the weld probe of the superminiature of using thinning and little spacing pin, the accuracy and the reliability problems of current detection device appears owing to closeization of solder ball technologies.
Therefore, because former checkout gear technology is subjected to the restriction of the physics development of the above-mentioned checkout gear that is used for the semiconductor technology type, this new technology needs new detection device, and is inapplicable because old technology does not support the demand of closeization of soldered ball.Similarly, current method of measurement needs directly probe is contacted the silicon lead and causes infringement to the semiconductor device that exists, then can damage this device sometimes or reduces its useful life.But when soldered ball is made by soft metal material, utilize surface that the hard contact of probe will the scratch soldered ball or, thereby do not meet the satisfied specification of original designing institute because the sphere self of soldered ball makes contact not exclusively cause the electrical characteristics loss.
Therefore, the object of the present invention is to provide a kind of spiral contactor, semiconductor detector (slot, test board and detecting card) and electronic component (embedded slot, embedded type connector), these can be applied to miniature semiconductor device, encapsulation, ultra micro and carry chip and wafer, do not damage and the crack on soft soldered ball in order to form the current-carrying circuit, and in order to closeization that be applied to soldered ball and be used for realizing that in reasonable price high-reliability detects.
Summary of the invention
A kind of method is used to solve described problem, the present invention relates to a kind of method of making spiral contactor, described spiral contactor comprises and is used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component, described spiral contactor embeds the surface of a printed circuit board (PCB), said method comprising the steps of: through hole is set on dielectric base, on the whole surface of described dielectric base, forms a kind of first metal coating subsequently; In described through hole, insert elastomer, and eliminate unevenness on the elastomer exposed surface by Surface Machining; At least on described elastomeric exposed surface, form second metal coating of identical type; The upper surface on surface that covers the metallizing of described dielectric base forms the film of spiral external form with the etching process by subsequently, and covers its lower surface with the film by same etching process formation ring-type external form; The all surface that corrodes described dielectric base is to form spiral probe; On the surface of described dielectric base, form the thin metal coating of another kind; And on the upper surface of described dielectric base, form resist coating, and handle by cover layer and to form saddle.
The invention still further relates to a kind of method of making spiral contactor, described spiral contactor comprises and is used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component, described spiral contactor embeds the surface of a printed circuit board (PCB), said method comprising the steps of: form first metal coating and form resist thereon on metallic plate; To be formed on the design transfer of the described spiral probe on the mask to resist by exposure printing and development; The metallic plate zone of exposing in previous step is applied second metal coating; Remove described resist; Again form described resist; Form saddle by the exposure and the described resist that develops; Peel off and remove described metallic plate, and by erosion removal first metal coating; And by after each spiral probe is arranged in the opening part of the corresponding through hole that forms on the printed circuit board (PCB), between spiral probe and printed circuit board (PCB), apply conduction sticker or soldering paste and extrusion spiral probe and printed circuit board (PCB), spiral probe is installed on the printed circuit board (PCB), and wherein second metal coating is different with the kind of first metal coating.
The invention still further relates to a kind of method of making spiral contactor, described spiral contactor comprises and is used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component, described spiral contactor embeds the surface of a printed circuit board (PCB), said method comprising the steps of: on the upper surface of first metal coating that forms on all surface of dielectric base, form resist, and will be formed on the design transfer of the spiral probe on the mask to described resist by exposure and development; The zone of being exposed by previous step in the metallic-coated surface of dielectric base forms second metal coating; Remove described resist; Remove described first metal coating by etching process; By laser described dielectric base is formed the pattern of spiral probe, and on the upper surface of described dielectric base, form resist again; On the upper surface of described dielectric base, form first metal coating, form second metal coating thereon, and remove described resist; And by on the surface with a plurality of through holes of printed circuit board (PCB), applying conduction sticker or soldering paste, each spiral probe is arranged in the opening part of a corresponding through hole, and spiral probe pushed to printed circuit board (PCB), thereby spiral probe is installed on the printed circuit board (PCB), and wherein second metal coating is different with the kind of first metal coating.
The invention still further relates to a kind of method of making spiral contactor, described spiral contactor comprises and is used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component, described spiral contactor embeds the surface of a printed circuit board (PCB), said method comprising the steps of: on the upper surface of first metal coating that forms with predetermined thickness on all surface of dielectric base, form resist, and by exposing and developing the design transfer of the spiral probe that forms on the mask to described resist; Remove part first metal coating by etching process, and stay the pattern of described spiral probe; Part by the laser ablation described dielectric base corresponding with through hole under the spiral probe pattern; On the surface of the remainder of described dielectric base, form resist, and form first metal coating, and form second metal coating; And remove described resist, and remove first metal coating by etching process, wherein second metal coating is different with the kind of first metal coating.
The invention still further relates to a kind of method of making spiral contactor, described spiral contactor comprises and is used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component, described spiral contactor embedding one has the surface of the printed circuit board (PCB) of micro through hole, said method comprising the steps of: form first metal coating and form resist thereon on metallic plate; By exposure with develop being formed on spiral probe design transfer on the mask to described resist; On the metallic plate zone of exposing, apply second metal coating by previous step; Remove described resist; Again form resist; Form saddle by the exposure and the described resist that develops; Peel off and remove described metallic plate, and remove first metal coating by etching process; By on the parameatal surface of the micro through hole of printed circuit board (PCB), applying conduction sticker or soldering paste, each spiral probe is arranged in the opening part of corresponding micro through hole, and spiral probe pushed to printed circuit board (PCB), thereby spiral probe is installed on the printed circuit board (PCB), and wherein second metal coating is different with the kind of first metal coating.
Description of drawings
Fig. 1 represents the vertical view according to the spiral contactor of first embodiment of the invention.
Fig. 2 represents the profile of first, second and third embodiment A-A line in Fig. 1 according to the present invention.
The profile of A-A line when Fig. 3 represents to contact with semiconductor device.
Fig. 4 represents to dispose around spiral contactor according to fourth embodiment of the invention the vertical view of capacitor.
Fig. 5 represents the profile according to spiral contactor B-B line in the 4th figure of fourth embodiment of the invention.
Fig. 6 represents the spiral contactor profile according to fifth embodiment of the invention.
Fig. 7 represents identical with the fifth embodiment of the invention profile when contacting with semiconductor device.
Fig. 8 represents to overlook enlarged drawing according to the spiral probe of sixth embodiment of the invention.
Fig. 9 represents the profile according to the spiral contactor of seventh embodiment of the invention.
Figure 10 represents the stereogram according to the spiral contactor identical with the 7th embodiment of example.
Figure 11 (a) expression is according to the profile of the tentaculum that spins of eighth embodiment of the invention.
The exploded view of Figure 11 (b) expression other method.
Profile after Figure 11 (c) expression is finished.
Figure 12 represents the profile according to the semiconductor detector with spiral contactor of ninth embodiment of the invention.
Figure 13 represents the profile according to the semiconductor detector with spiral contactor of tenth embodiment of the invention.
Figure 14 represents the profile according to the semiconductor detector with spiral contactor of tenth embodiment of the invention.
Figure 15 represents the stereogram according to the semiconductor detector with spiral contactor of tenth embodiment of the invention.
Figure 16 represents the semiconductor detector profile with spiral contactor according to tenth embodiment of the invention.
Figure 17 represents according to the piston of the semiconductor detector of tenth embodiment of the invention (plunger) position vertical view.
Figure 18 represents the vapour-pressure type circuit diagram according to the semiconductor detector with spiral contactor of eleventh embodiment of the invention.
Figure 19 represents the profile according to the semiconductor detector of twelveth embodiment of the invention.
Figure 20 represents that the existing program diagram (a) and the flow chart of program diagram of the present invention (b) compare with the explanation twelveth embodiment of the invention.
Figure 21 represents to have according to the two ends of thriteenth embodiment of the invention the profile of the semiconductor detector of spiral contactor.
Figure 22 represents the profile according to the semiconductor detector of two end in contact of the semiconductor device of thriteenth embodiment of the invention and connector and spiral contactor.
Figure 23 represents according to fourteenth embodiment of the invention, (a) for connecting spiral contactor two ends cross section type before, is connected the electronic component profile of situation with (b) expression.
Figure 24 represents according to fifteenth embodiment of the invention, (a) connects the profile of the electronic component of the spiral contactor with arrangement with an end of contactor cable, is the profile before being connected with (b).
Figure 25 represents the profile of the manufacture process of spiral contactor 1, and wherein the copper electroplating process is first process.
Figure 26 represents the process that second and third process middle punch and copper are electroplated.
Figure 27 represents to insert in the 4th and the 5th process elastomer and the surperficial process of finishing.
Figure 28 represents the copper electroplating process of the 6th process.
Figure 29 represents the masking process that is used to corrode of the 7th process.
Figure 30 represents the corrosion process of the 8th process.
Figure 31 represents the electroplating process of the 9th process.
Figure 32 is illustrated in the cover layer processing procedure in the tenth process.
Ideograph when Figure 33 (a) expression electronic component embeds slot and (b) ideograph when having embedded slot for electronic component.
Ideograph when Figure 34 (a) expression electronic component embeds slot, and (b) ideograph when having embedded slot for electronic component.
Figure 35 is illustrated in the enforcement example ideograph that adopts spiral probe 2 in the slot, (a) is that vertical view, (b) (c) are the section right view for cross-sectional front view reaches.
Figure 36 represents that electronic component has embedded the ideograph of slot, (a) is that vertical view, (b) (c) are the section right view for cross sectional plan view reaches.
Figure 37 is illustrated in the procedure chart that transmits and be formed on the embodiment of the spiral probe that forms on the aluminium sheet on the surface of printed substrate.
The procedure chart that is disposed at the manufacture method at printed substrate two ends for spiral contactor shown in Figure 38.
The procedure chart that does not use the embodiment of conduction sticker making spiral contactor for the process conduct of on dielectric base, making spiral contactor shown in Figure 39.
Shown in Figure 40 is the embodiment procedure chart of making spiral contactor on the surface of printed substrate in the formed micropore hole.
Symbol description
The 1-spiral contactor; The 2-spiral probe;
Hole, 3-below; The 4-electro-coppering;
4 '-Copper Foil; The 5-connecting portion;
6,63-dielectric base; The 7-soldered ball;
The 7a-Metal Ball; 8,8a-semiconductor device;
The 10-capacitor; 11,11a-elastomer (elastic film);
The 12-saddle; The 13-joint sheet;
The 14-inductor; 15,40-slot;
The 16-lid; 17,17a, 17b, 17c, 17d, 17e, 17f-piston;
The 18-ring-shaped groove; The 19-sealant;
The 20-closed chamber; The 21-exhaust outlet;
The 24-joint; The 25-UV winding;
The 26-connector; The 27-detecting card;
The 29-electronickelling; The 32-cable;
33,45-printed substrate; 31,41,43-electronic component;
The 42-pliers; The 46-SUS thin plate;
The 47-upper surface; 48-conducts electricity sticker;
The 51-micropore; 56,57-slot saddle;
The 58-protuberance; 61-resist film; The e-gap.
Embodiment:
Embodiments of the invention are described with reference to the accompanying drawings.
Figure 1 shows that spiral contactor 1 vertical view of explanation first embodiment of the invention and Figure 2 shows that A-A profile among Fig. 1.
Among Fig. 1, the interval of soldered ball is with the spacing arrangement of 0.4mm.According to the weld probe with the grating structure configuration, spiral contactor 1 is made up of a large amount of spiral probe 2 that is disposed at the semiconductor device dorsal part, though the periphery of each spiral probe 2 is round, its inside then is the spiral type probe.
In addition, according to spiral contactor 1 of the present invention, even the soldered ball of the less spacing of tool at interval also can be compatible.
Among Fig. 2, spiral probe 2 is flat wound under non-loaded situation.The profile that Fig. 3 contacts with spiral probe 2 under detected state for the soldered ball 7 of representing semiconductor device 8.
When the soldered ball of semiconductor device 8 was pressed on for 7 times on the spiral probe 2, contact area extended to the outside from semiconductor probe 2 centers, so spire curves concavity to be deformed into around ball.Spiral probe 2 can helical form form long and accurate contact around soldered ball 7, even there is foreign substance to adhere to, can remove foreign substance by the slip along soldered ball 7 peripheries, therefore, can guarantee stable current-carrying contact.
In addition and since spiral probe pin angle 2a pressurized slide onto the peripheral of soldered ball 7 and cut down soldered ball 7 peripheries contain the oxygen film, spiral probe 2 can obtain accurate current-carrying.
And, with the pressure of probe 5-15 gram (g) of routine comparatively speaking, the pressure of a probe of the present invention is 0.8-1.5g, obtains stable current-carrying contact by approximate 1/10 times conventional pressure.
For example, if conventional device has 1000 probes, then pressure needs 10 kilograms (kg), and adopts the pressure of spiral probe of the present invention only to need 1kg, and this is practical for the lighter structural design of weight.
Though the manufacture method of spiral probe 2 will be described in an embodiment, its objective is and utilize little shadow technology of light or electron beam to realize, micromachined is practical,, also can utilize radium-shine processing or other micromachined.
Fig. 2, Fig. 3 are the figure of explanation second embodiment of the invention.Because the hole, below 3 of spiral probe 2 is recess and space, the pressure of soldered ball 7 can cause the distortion of spiral probe 2.In other words, as Fig. 2, shown in Figure 3, spiral probe 2 can be arranged in the hole that runs through, and generally is called through hole.
Fig. 2 is the figure of explanation third embodiment of the invention.For example, in Fig. 2, the dielectric base 6 that is positioned at spiral probe 2 belows has the hole 3 of internal diameter 0.3mm.Electro-coppering 4 is allocated in inboard hole 3 and forms conductive part and allow spiral probe 2 and connecting portion 5 directly to interconnect and become vertical type wiring system current-carrying circuit.
Fig. 4, Fig. 5 are the figure of the explanation fourth embodiment of the present invention.Fig. 4 is the vertical view that disposes capacitor 10 around spiral probe 2, and Fig. 5 is the profile of its B-B line.Among Fig. 4, four holes be arranged at appointment spiral probe 2 around with embedded capacitors 10.
Among Fig. 5, not that each spiral probe 2 all needs capacitor 10, but fully be disposed at several zones to show effect.
In addition, capacitor 10 not only can be assembled running by commodity are installed, and utilizes the capacitor that two ends have electrode to operate after insulating substrate is inserted dielectric substance.
Fig. 6,7 and 14 is the profiles that are used to illustrate the spiral contactor separately 1 of fifth embodiment of the invention.
Fig. 6 is that expression is provided with electro-coppering 4 in inboard hole 3 and after elastomer 11 is inserted the hole, and spiral probe 2 and connecting portion 5 are inserted in 3 top and the bottom at the hole.This elastomer is the elastomer (elastmer) of silicon system.Yet, also can utilize the resin of polyamide series, the resin of epoxy resin series.
Fig. 7 is the soldered ball 7 of expression semiconductor device 8 contacts situation with spiral probe 2 a profile.Figure 14 is that expression is regarded elastic membrane 11 cutaway view of elastomeric method as.
Fig. 8 illustrates the figure of sixth embodiment of the invention.
Fig. 8 is the amplification plan view of spiral probe 2, and according to sixth embodiment of the invention, a concerns formation to each width of f according to a＞b＞c＞d＞e＞f, approaching more top, and width is more little.
Fig. 9, the 10th illustrates the figure of seventh embodiment of the invention.
Fig. 9 is the profile of spiral probe 2.Figure 10 is the stereogram of spiral contactor 1.
In Fig. 9, highly be the saddle 12 at 40 to 180 microns oblique holes, it makes soldered ball 7 be easy to and is supported.In addition, saddle 12 plays the effect of the arrester(-tor) of the depression that limits each soldered ball 7.
In Figure 10, distribute saddle 12 for each spiral probe 2 with bellmouth.Saddle 12 is guiding, makes to adjust the soldered ball 7 of placing semiconductor device or the encapsulation with spiral probe 2 easily, and is disposed on the dielectric base.
Figure 11 (a) is the figure of explanation eighth embodiment of the invention.
Figure 11 (a) is the spiral probe 2 external form profiles of expression convex.Apply strain by copper coin and make it become convex, make the core of elastomer 11 outwards extrude formation convex spiral probe 2 connecting portion 5.
This convex spiral probe 2 is best, is different from the joint sheet 13 with soldered ball 7 joint geometries with cooperation.
And Figure 11 (b) is the exploded view of explanation other method, and Figure 11 (c) is the profile after finishing.
In Figure 11 (b), the spiral probe 2 that forms on the dielectric base with through hole 3 inserts the elastomer 11a of spheroiding this hole and uses printed substrate (PWB) 33 to block then.Therefore, shown in Figure 11 (a), spiral probe 2 pressurizeds are in ball-type elastomer 11a and can obtain convex spiral probe 2.
In addition, convex spiral probe 2 is not subjected to the restriction to the method shown in 11 (c) figure in the 11st (a), can utilize coil spring to form convex yet.
Figure 12 is the figure of explanation ninth embodiment of the invention.
Figure 12 is the profile that expression semiconductor device 8 or BGA, CSP encapsulation are written into the slot 15 of semiconductor detector.
The hole of slot 15 has the inclined-plane leader as preliminary guiding, and has the device that is easy to be written into semiconductor device 8 or encapsulation.And spiral probe 2 is held and stopped to the soldered ball in detection 7 by saddle 12.
Secondly, lid 16 being set detects the center part of thing and then finishes setting to allow piston 17 to press to one.
The present invention's inductor 14 is embedded in the slot 15 to detect being absorbed in of thing.
In other words, if be written into semiconductor device 8 in the lid 16 of slot 15 and setting, then the function of inductor 14 is to detect its gap e to confirm to be arranged at the appropriate location in advance.In addition, for example, this inductor 14 is contiguous (the electrical proximity switch) switches of electronic type, yet, be not so limited.
Figure 13,14, the 15th illustrates the figure of tenth embodiment of the invention, and it is written into the profile of slot state, the partial enlarged drawing and the stereogram of this profile for expression.In Figure 13, the invention is characterized in to have sealant 19.This sealant 19 has the ring-type external form and inserts ring-shaped groove 18.Though the sealant 19 among Figure 13 as example, is not subjected to the restriction of O type ring with O type ring, other detection things and method are as long as can determine that reaching airtight as packing ring or colloid also can accept.
Slot 15 and semiconductor device 8 since sealed dose 19 around can reaching airtight, thereby form closed chamber 20.
Figure 14 is the regional profile that comprises the exhaust outlet 21 of the 13rd figure.Elastomer 11 is elastic films, can guarantee airtight.A large amount of exhaust outlets 21 is disposed at around the spiral probe 2, and by discharging the air of closed chambers 20 from exhaust outlet 21, the pressure between slot 15 and the semiconductor device 8 becomes both equivalent absorption affinities and is in contact with one another when detection.In other words, this is the vacuum suction method, in order to substitute conventional mechanical type pressurization.Therefore, the pressurization part key that does not just need the lid 16 among Figure 12 to reach corresponding to piston 17.In addition, under opposite situation, described exhaust outlet 21 becomes air supply opening and removes both absorption so that air to be provided.
Figure 15 is pack into a stereogram in the saddle 12 of the exhaust outlet 21 of expression configuration.
Figure 16,17 is equally in order to the explanation tenth embodiment of the invention.Figure 16 (a) expression slot 15 is written into the profile of the termination 24 of plural semiconductor device 8 or wafer, and Figure 16 (b) is that expression is written into slot 15 profile afterwards.The pressurization that is used in both is the vacuum type absorption method.Figure 17 is the vertical view of the configuration of expression piston 17.In Figure 17, for example, among the semiconductor device 8a, 3 is that one group piston 17a, 17b and 17c places according to horizontal direction, and 3 is that one group piston 17d, 17e and 17f places according to vertical direction.Figure 18 is the figure of explanation eleventh embodiment of the invention.
Figure 18 is a kind of vapour-pressure type circuit diagram of vacuum suction, and Figure 18 (a) is the situation of expression semiconductor device 8 desorption (desorption) when detecting, the situation of Figure 18 (b) expression semiconductor device 8 absorption when detecting.In Figure 18 (b), if be written into the detection thing, then when opens solenoid valve, since electromagnetically operated valve by excitation and switching channel to connect " P " and " A ", so the air that is formed at sealed chamber with detect thing together, and detect thing and adsorbed by vacuum pump, come the opening pressure inductor by absorption.
In Figure 18 (a), if the desorption object is then closed electromagnetically operated valve and made passage get back to initial position by elastic force.By air being sucked vacuum area to remove absorption.In addition, though this pressure inductor is the electronic pressure inductor, but also can utilize other inductors.
Figure 19 is the figure of explanation twelveth embodiment of the invention.
Figure 19 (a) is illustrated in to paste the profile of wafer before UV winding 25 is written into detecting card 27 in order to embedding (mounting) and cutting (dicing) semiconductor device afterwards, and Figure 19 (b) is the profile after expression is written into.Both pressurizations are the vacuum suction methods.Utilize the wafer before the detection method restriction cutting of routine of detecting card, yet, detecting card 27 of the present invention can with the wafer compatibility after the cutting.Even its reason is that additional positioning function still can be held soldered ball by saddle 12 because of the minimum non-situation of agreeing with takes place in cutting.
Figure 20 is the process (a) and process of the present invention (b) flow chart relatively of the existing wafer-level of expression.In figure (a), trace routine need be utilized detecting card twice, once is the trace routine that wafer is surveyed 3a that is called that detects before cutting,, the detection 9a that another time then undertaken by the operator before packing and shipment.Its reason is might produce faulty goods in the program 5a of wafer cutting.On the other hand, process of the present invention (b) only needs after wafer cutting 5b, does once to be called the trace routine that chip is surveyed 6b.
Figure 21, the 22nd illustrates the profile of the present invention the 13rd embodiment.
In Figure 21, spiral probe 2 is disposed at the two ends of dielectric base.
In Figure 22, what contact with upper surface is semiconductor device 8, and that contact with lower surface is the Metal Ball 7a of " plug-in type (male) " function of tool connector 26.Fixedly the connector 26 of lower surface is only replaced the semiconductor device 8 of upper surface to keep residing state.
In addition, the method that spiral probe 2 is disposed at two ends is a side that is disposed at dielectric base 6, as shown in figure 21, or utilize the sticker of conduction cover as shown in figure 22 be configured in two ends with the formation unified form.
Figure 23 is the figure that says fourteenth embodiment of the invention.
Figure 23 (a) be illustrated in spiral contactor two end in contact before ideograph, be PWB printed substrate (Print Wire Board) 33 with what connect up and down.Figure 23 (b) is the profile of electronic component 31 (such as connector), and expression is connected with PWB's 33.This allows electronic component miniaturization, minimum thickness and in light weight, and has good high-frequency electrical characteristic and highdensity embedding.
Connector minimum thickness in conventional pin (pin) method is 5mm, on the other hand, the connector minimum thickness in screwed union of the present invention is 1mm, therefore, owing to be thinned to 1/5, significantly improve the high-frequency electrical characteristic and have high density actually.
Figure 24 is the figure of explanation fifteenth embodiment of the invention.
Figure 24 (b) is that expression has the profile that the electronic component 31 (such as connector) of spiral contactor of arrangement is connected with at least one end of connector cable 32.Figure 24 (a) is the ideograph before expression connects.As mentioned above, by adopting spiral contactor can improve the high-frequency electrical characteristic of electronic component significantly.In addition, the electronic component of the spiral contactor of one-sided configurable arrangement not only, and also can in both sides.
Embodiment
Be a kind of explanation of manufacture method of spiral contactor 1 below.
Figure 25 to 32 is the profiles about the manufacture process of spiral contactor 1.Yet this inserts the situation at the hole 3 of dielectric base 6 for elastomer 11.Below according to the order explanation of process.
Among Figure 25, dielectric base 6 is that thickness is the glass epoxy resin (FR-4) of 0.3mm, and the thickness of the electro-coppering 4 at its two ends is 5 to 18mm.
Among Figure 26, punch (generally being called through hole) 3 and on whole surface, apply electro-coppering 4 by drill bit, thereby the current-carrying circuit of vertical wires method is provided in internal holes 3.
Among Figure 27, elastomer (silicon series elastomer) 11 is inserted in the hole 3, and removed the part of protruding and caving in by Surface Machining.
Among Figure 28, apply electro-coppering 4 on whole surface.
Among Figure 29, reach the film that forms the ring-type external form at lower surface at the film that upper surface forms the spiral external form by corrosion.
Among Figure 30, by corroding whole surface to form the external form of spiral probe 2.
Among Figure 31, carry out electronickelling 29 on two surfaces up and down.
Among Figure 32, handle formation saddle 12 by cover layer (cover-lay).
Can actually produce spiral contactor according to above-mentioned manufacturing sequence.
Figure 33 figure is the embodiment that the slot 40 of spiral contactor 2 is adopted in expression.Figure 33 (a) is illustrated in the ideograph that embeds electronic component 41 in the slot 40.In Figure 33 (b), a large amount of soldered balls 7 are disposed under the surface of electronic component 41, and a large amount of spiral probes 2 is disposed at the upper surface of corresponding slot 40.
Figure 33 (b) is the ideograph that expression electronic component 41 embeds in the slot 40.Among Figure 33 (b), 41 soldered ball 7 of electronic component is held the location by the saddle on the slot 40 12, by the fastener part of pliers 42 spiral probe 2 is exerted pressure then and fixes with contact.
Among Figure 34 the embodiment that the spiral contactor 2 in the electronic component 43 is adopted in expression.
Figure 34 (a) is illustrated in the ideograph that slot 40 is embedded in electronic component 43, and a large amount of spiral probes 2 is arranged in below electronic component 43 surfaces, and a large amount of soldered balls 7 is arranged in the corresponding slot 40.
Figure 34 (b) is the ideograph that expression electronic component 43 embeds in the slot 40.In Figure 34 (b), the spiral probe 2 of electronic component 43 is held the location by saddle 12, and exert pressure fastener by pliers 42 of 2 pairs of soldered balls 7 of spiral probe partly contacts and fixes then.
Figure 35 is the ideograph of the embodiment of the slot 40 in the above-mentioned employing spiral contactor 2 of expression.(a) being vertical view, (b) is front view, (c) is right view.Shown in (b), slot 40 is embedded in and is used for encapsulation in the printed substrate 33.Shown in (a), the inside that is arranged in slot 40 of spiral probe 2 symmetries, slot saddle 56,56,57,57 around around, and slot saddle the 56, the 56th, the realization that is made of elastic sheet SUS freely opens or closes.Form protuberance 58,58 at the two ends of slot saddle 56,56, and it is adhered to easily or separate by a special fixtures (not shown).
Figure 36 is the ideograph that expression electronic component 41 is embedded in slot 40, (a) is vertical view, (b) is front view, (c) is right view.When embedding, insert electronic component and cause slot saddle 56 outward-dipping and open, shown in 2 chain lines.Wherein, the soldered ball 7 of electronic component 41 is held and is located by the saddle on the slot 40 12, is exerted pressure to contact by projection 58,58 and to fix by spiral probe 2 then, and its projection 58,58 can restore to the original state by thrust.
Be the explanation of the manufacture method of another kind of spiral contactor 1 below.
Figure 37 is illustrated on the printed substrate 33 by duplicating the forming process figure of the spiral probe 2 that is formed at SUS thin plate 46.
(a) on the surface of SUS thin plate 46, applying the process of electro-coppering 4 to paste resist film 61 on this surface.This resist film 61 is dry films, also available emulsion.
(b) for resist film 61 being formed concavities with the process as the pothole of making spiral probe 2 external forms by printing and development.
(c) be 9 to apply the process of electronickelling 29 on the surface of process (b).
(d) for remove the process of resist film 61 by medicament (solvent).
(e) for coating the process that thickness is the resist film 61 of 50mm.
(f) for form the process of saddle 12 by printing and development resist film 61.
(g) for after peeling off and remove SUS thin plate 46, passing through the process of erosion removal electro-coppering 4.
(h) be coating and assembling conduction sticker 48 on printed substrate 33.
Order according to said process can produce spiral contactor.
Be the explanation of the manufacture method of another kind of spiral contactor 1 below.
Figure 38 is the process drawing that explanation is disposed at the spiral contactor at printed substrate 33 two ends.Below according to the order explanation of process.
(a) for paste the Copper Foil 4 that thickness is 18mm ' being that the upper surface of the polyamide dielectric base 63 of 0.5mm is pasted resist film 61 at thickness at upper surface.In addition, by printing and development resist film 61 is formed concavities with the process as the pothole of making spiral probe 2 external forms.
(b) for apply the process of electronickelling 29 by galvanoplastic.
(c) for remove the process of resist film 61 by medicament (solvent).
(d) for by erosion removal Copper Foil 4 ' process.
(e) be by the radium-shine polyamide dielectric base 63 that in spiral probe 2, forms, only to paste the process of resist film 61 again in required zone.
(f) for to apply electroless plating copper 4, to apply the process of electronickelling 29 on this surface on whole surface.Secondly, remove resist film 61 by medicament (solvent), to finish the spiral contactor that is arranged with spiral probe 2.
(g) be at printed substrate 33 both sides coating conduction sticker 48, to paste the process of fixing by the spiral contactor that is arranged with spiral probe 2 of former process manufacturing as core.In addition, if the position difference of two spiral probes 2 of printed substrate 33 each end then can be made another kind according to present embodiment and be positioned at the following pattern in surface.In addition, tin cream can be used to replace conduction sticker 48.
Can produce the spiral contactor that is arranged in printed substrate 33 both sides according to above-mentioned procedural order.
Be the manufacture method of another kind of spiral contactor 1 below.
Figure 39 is the embodiment that makes the spiral contactor that does not have the conduction sticker, and is illustrated in the procedure chart that generates spiral contactor on the dielectric base 63.Below according to the order explanation of process.
(a) be the process of the copper sheet of 38mm on the surface of polyamide dielectric base 63, pasting thickness, the Copper Foil 4 of thickness 18mm ' be pasted on both side surface wherein, and, after pressure sintering is pasted resist film 61, go up the external forms of making spiral probes 2 by printing and being developed in resist film 61 surfaces.
(b) be process by the zone outside erosion removal spiral probe 2 external forms.
(c) be the process of removing polyamide dielectric base 63 from lower surface by radium-shine.
(d) for piling up the process of electronickelling 29 after pasting resist film 61 at desired zone and applying electroless copper 4.
(e) be the process of after removing resist film 61, passing through erosion removal electro-coppering 4.
Can produce the spiral contactor that on through hole, is arranged with spiral probe 2 according to above-mentioned procedural order.
Be the explanation of the manufacture method of another kind of spiral contactor 1 below.
Figure 40 is the embodiment of the hole assembling spiral probe 2 of the micropore 51 that is that printed substrate 45 upper surfaces 47 form.Micropore 51 is that connecting circuit is to connect the intermediate layer printed substrate 45,45,45 of improvement sandwich construction.In this embodiment, can shared micropore 51 and through hole and make plank thinner at the spiral probe 2 of the hole of micropore 51 assembling.
Be the explanation of fabrication schedule below.
(a) remove SUS plate 46 for peeling off, then described Figure 37 (a) pass through after (f) process erosion removal Copper Foil 4 ' process.
(b) for the process of spiral probe 2 is provided at micropore 51 holes as shown in the figure by printing on the surface 47 of micropore 51 and fixing conduction sticker 48.
As mentioned above, according to the present invention, can realize the various effects of the following stated.According to the present invention, the function of spiral contactor is:
(1) with regard to spiral probe, with respect to the method for routine owing to there are many contact components to have long contact point, thus when attaching foreign substance difficulty come in contact inefficacy, therefore can finish the checkout gear of high-reliability.
(2) can be out of shape with the soldered ball external form of correspondence,, therefore can not cause the infringement of breaking or being out of shape such as soldered ball with the contact of reeling.
(3) diameter and the position owing to soldered ball can not influence coiling and can guarantee accurate contact.
(4) has the advantage that is applicable to high-frequency signal owing to shortening the length of semiconductor device to encapsulation.
(5) good space utilization efficient and can by at the hole assortment spiral probe that generally is called through hole and with high density weld probe compatibility.
(6) increase the density of embedding as one of checkout gear with slot.
Be the arrangement of above-mentioned functions below.
A. the slot of die size can be applied to carry on the chip.
B. can make slot density identical with chip tray.
Thereby c. increase slot density to allowing slot to become most, therefore effectively reduce cost with the pallet same levels.
D., highdensity burn-in board (burn in board) and high space utilization efficient can be arranged.
E. chip directly is sent to burn-in board (burn in board) so operating efficiency from pallet (tray) top increases.
Among the present invention, can realize abundant distortion by bending below the space of spiral probe or perforating.
Among the present invention, owing to the circuit space can be reduced to minimum by the current-carrying circuit that forms the vertical wires system, so can be corresponding to the density of weld probe.
Among the present invention, because spiral contactor can be by disposing one or a large amount of capacitor around the spiral probe in order to connect the moment pressure drop that spiral probe responds power supply in the fast signal treatment circuit, so can prevent the problem of the transmission of electronic signal, therefore can increase the reliability of checkout gear.
Among the present invention, in recess or hole, insert elastomer or apply elastic film in the aperture and can prevent that all spiral contactor from descending, and after exerting pressure of soldered ball removed, can help spiral contactor to recover to increase durability and airtight.
Among the present invention, by make spiral probe from root near the thin more flexure stress that disperses of the width at top to keep durability and permanent useful life.
Among the present invention, the installing saddle can help soldered ball to be absorbed in the hole of saddle and help each spiral probe location, therefore can shorten the time that is written into.
Among the present invention, the spiral probe of concavity external form of the present invention is owing to combine plane and sphere, and for having the plane, for example joint sheet (bonding pad) can be done best contact.
Among the present invention, adopt inductor can know the situation that obtains error message in advance, whether the encapsulation of semiconductor device is written into suitable position, thereby increases the reliability of automation.
Among the present invention, the configuration sealant is in to get rid of the air of both inside between the device (for example encapsulation) of checkout gear (slot) and checkout gear below, can become the vacuum suction process, the operation that this process can be saved pressure-producing part and save assembling parts is written into the time with minimizing.
Among the present invention, detect because of getting rid of the minimizing (change) of the air pressure that air causes between dielectric base and the semiconductor device by pressure inductor, thus the reliability of increase automation.
Among the present invention, in the detection of wafer, allow section is finished after, to detect (detection), detection time of routine can be kept to once from twice, the number in man-hour of detection can be reduced half.
Among the present invention, because optionally contact, when the spiral contactor breakage maybe must be upgraded, the part of only replacing spiral contactor got final product, and this is locality and dismounting easily for doing suitable maintenance.
Among the present invention, can provide small-sized, reach light-weighted electronic component as thin as a wafer, make its tool by good high-frequency electrical characteristic and highdensity embedding for the selective exposure system of spiral contactor.And it is simple easy to connect, and price is low because parts are few.
Among the present invention, as mentioned above, can make one small-sized, reach the electronic component of good high-frequency electrical characteristic of light-weighted tool and highdensity embedding spiral contactor as thin as a wafer.And it is simple easy to connect, and price is low because parts are few.
Among the present invention, because by adopting the manufacture method of little shadow technology, can on printed substrate, produce a large amount of spiral probes and arrange complicated, intensive and closely spaced spiral contactor, arrange complicated, intensive and closely spaced spiral contactor so can make later on.And, because light, Bao Jixiao, so can reduce manufacturing cost.
Among the present invention,,, therefore can improve quality so need not form sheet to keep external form with solvent even metallic plate peels off also owing to can form saddle by the resist film.And by adopting the manufacture method of little shadow technology, can produce spiral contactor having on the printed substrate of through hole, a large amount of arrangement complexity, intensive and closely spaced spiral probe are wherein arranged, arrange complicated, intensive and closely spaced spiral contactor so can make later on.And, because light, Bao Jixiao, so can reduce manufacturing cost.
Among the present invention, because the dielectric base of being made up of polyamide by radium-shine irradiation can stay the metal part, so can form the external form of spiral probe.And, by adopting the manufacture method of little shadow technology, can produce spiral contactor having on the printed substrate of through hole, it has a large amount of arrangement complexity, intensive and spacing minor spiral probe, arranges complicated, intensive and closely spaced spiral contactor so can make later on.In addition, because light, Bao Jixiao, so can reduce manufacturing cost.
Among the present invention, because by not using the manufacture method of conduction sticker or stand cream (hander paste), the spiral contactor that produces the spiral probe with a large amount of arrangements on the printed circuit substrate of through hole can be had, and by adopting the manufacture method of little shadow technology, can produce have a large amount of arrangement complexity, the spiral contactor of intensive and closely spaced spiral probe, arrange complicated, intensive and closely spaced spiral contactor so can make later on.In addition, because light, Bao Jixiao, so can reduce manufacturing cost.
Among the present invention, because by this manufacture method, can on the printed circuit substrate of tool micropore, produce the spiral contactor of spiral probe with a large amount of arrangements, and by adopting the manufacture method of little shadow technology, can produce the spiral contactor of a large amount of arrangement complexity, intensive and closely spaced spiral probe, arrange complicated, intensive and closely spaced spiral contactor so can make later on.In addition, because light, Bao Jixiao, so can reduce manufacturing cost.

Claims (5)

1, a kind of method of making spiral contactor, described spiral contactor comprise and are used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component that described spiral contactor embeds the surface of a printed circuit board (PCB), said method comprising the steps of:
Through hole is set on dielectric base, on the whole surface of described dielectric base, forms a kind of first metal coating subsequently;
In described through hole, insert elastomer, and eliminate unevenness on the elastomer exposed surface by Surface Machining;
At least on described elastomeric exposed surface, form second metal coating of identical type;
The upper surface on surface that covers the metallizing of described dielectric base forms the film of spiral external form with the etching process by subsequently, and covers its lower surface with the film by same etching process formation ring-type external form;
The all surface that corrodes described dielectric base is to form spiral probe;
On the surface of described dielectric base, form the thin metal coating of another kind; And
On the upper surface of described dielectric base, form resist coating, and handle by cover layer and to form saddle.
2, a kind of method of making spiral contactor, described spiral contactor comprise and are used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component that described spiral contactor embeds the surface of a printed circuit board (PCB), said method comprising the steps of:
On metallic plate, form first metal coating and form resist thereon;
To be formed on the design transfer of the described spiral probe on the mask to resist by exposure printing and development;
The metallic plate zone of exposing in previous step is applied second metal coating;
Remove described resist;
Again form described resist;
Form saddle by the exposure and the described resist that develops;
Peel off and remove described metallic plate, and by erosion removal first metal coating; And
By after each spiral probe is arranged in the opening part of the corresponding through hole that forms on the printed circuit board (PCB), between spiral probe and printed circuit board (PCB), apply conduction sticker or soldering paste and extrusion spiral probe and printed circuit board (PCB), spiral probe is installed on the printed circuit board (PCB)
Wherein second metal coating is different with the kind of first metal coating.
3, a kind of method of making spiral contactor, described spiral contactor comprise and are used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component that described spiral contactor embeds the surface of a printed circuit board (PCB), said method comprising the steps of:
On the upper surface of first metal coating that forms on all surface of dielectric base, form resist, and will be formed on the design transfer of the spiral probe on the mask to described resist by exposure and development;
The zone of being exposed by previous step in the metallic-coated surface of dielectric base forms second metal coating;
Remove described resist;
Remove described first metal coating by etching process;
By laser described dielectric base is formed the pattern of spiral probe, and on the upper surface of described dielectric base, form resist again;
On the upper surface of described dielectric base, form first metal coating, form second metal coating thereon, and remove described resist; And
By on the surface with a plurality of through holes of printed circuit board (PCB), applying conduction sticker or soldering paste, each spiral probe is arranged in the opening part of a corresponding through hole, and spiral probe pushed to printed circuit board (PCB), thereby spiral probe is installed on the printed circuit board (PCB)
Wherein second metal coating is different with the kind of first metal coating.
4, a kind of method of making spiral contactor, described spiral contactor comprise and are used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component that described spiral contactor embeds the surface of a printed circuit board (PCB), said method comprising the steps of:
On the upper surface of first metal coating that forms with predetermined thickness on all surface of dielectric base, form resist, and by exposing and developing the design transfer of the spiral probe that forms on the mask to described resist;
Remove part first metal coating by etching process, and stay the pattern of described spiral probe;
Part by the laser ablation described dielectric base corresponding with through hole under the spiral probe pattern;
On the surface of the remainder of described dielectric base, form resist, and form first metal coating, and form second metal coating; And
Remove described resist, and remove first metal coating by etching process,
Wherein second metal coating is different with the kind of first metal coating.
5, a kind of method of making spiral contactor, described spiral contactor comprises and is used for setting up a plurality of spiral probes that are electrically connected with semiconductor device or electronic component, described spiral contactor embedding one has the surface of the printed circuit board (PCB) of micro through hole, said method comprising the steps of:
On metallic plate, form first metal coating and form resist thereon;
By exposure with develop being formed on spiral probe design transfer on the mask to described resist;
On the metallic plate zone of exposing, apply second metal coating by previous step;
Remove described resist;
Again form resist;
Form saddle by the exposure and the described resist that develops;
Peel off and remove described metallic plate, and remove first metal coating by etching process;
By on the parameatal surface of the micro through hole of printed circuit board (PCB), applying conduction sticker or soldering paste, each spiral probe is arranged in the opening part of corresponding micro through hole, and spiral probe pushed to printed circuit board (PCB), thereby spiral probe is installed on the printed circuit board (PCB)
Wherein second metal coating is different with the kind of first metal coating.
CNB2004100909932A 2000-09-26 2001-09-26 Spiral contactor and manufacturing Expired - Fee Related CN100550331C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000292652 2000-09-26
JP292652/2000 2000-09-26
JP2001077338A JP3440243B2 (en) 2000-09-26 2001-03-19 Spiral contactor
JP077338/2001 2001-03-19

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB011422815A Division CN1209804C (en) 2000-09-26 2001-09-26 Spiral contactor and mfg. method thereof, semiconductor detection apparatus using same and electronic element

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CN1607653A (en) 2005-04-20
JP2002175859A (en) 2002-06-21
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EP1191588A3 (en) 2004-11-24
CN1347143A (en) 2002-05-01
DE60134371D1 (en) 2008-07-24
US20020037657A1 (en) 2002-03-28
US6517362B2 (en) 2003-02-11
US6763581B2 (en) 2004-07-20
CN1209804C (en) 2005-07-06
US20030060064A1 (en) 2003-03-27
EP1191588B1 (en) 2008-06-11
TW511197B (en) 2002-11-21
KR20020024771A (en) 2002-04-01

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