CN100502021C - Electromagnetic radiation detection device, radiation detection device and system, and laser processing method - Google Patents
Electromagnetic radiation detection device, radiation detection device and system, and laser processing method Download PDFInfo
- Publication number
- CN100502021C CN100502021C CNB2006100926481A CN200610092648A CN100502021C CN 100502021 C CN100502021 C CN 100502021C CN B2006100926481 A CNB2006100926481 A CN B2006100926481A CN 200610092648 A CN200610092648 A CN 200610092648A CN 100502021 C CN100502021 C CN 100502021C
- Authority
- CN
- China
- Prior art keywords
- switch element
- parts
- detection device
- photo
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
As to an electromagnetic radiation detecting apparatus, a radiation detecting apparatus, a radiation detecting system and a laser processing method, a TFT is disposed on an insulating substrate. A conversion element converting electromagnetic radiation into an electric signal is disposed over the TFT. A member for marking the position of the switching element is disposed on the conversion element. The position of a switching element having a defect can be located by means of the member on the conversion element. By radiating laser light to be focused on the member, it becomes possible to perform repair accurately.
Description
Technical field
The present invention relates to electromagnetic radiation detection device, radiation detecting apparatus, radiation detection system and laser processing method, more particularly, relate to feasible electromagnetic radiation detection device, radiation detecting apparatus, radiation detection system and the laser processing method of repairing sensor array easily by the defective in the removal sensor array.In addition, suppose that in the present invention electromagnetic radiation comprises such as light such as visible light, infrared light, ultraviolet lights and such as radiation such as X ray, alpha ray, β ray, gamma-rays.
Background technology
A lot of liquid crystal display devices and optical pickocff have been produced in recent years, they all comprise the switch element array by thin-film transistor (TFT) formation that is formed on the glass substrate, these thin-film transistors use non-single crystal semiconductor, for example amorphous silicon hydride (a-Si:H).
The common drive principle of MOS transistor that is formed by single crystal semiconductor also goes for the TFT that formed by non-single crystal semiconductor, even and large tracts of land form the TFT that forms by non-single crystal semiconductor, their characteristic also is consistent.
In addition, use the switch element array of non-single crystal semiconductor also can be applied to optical pickocff.
Amorphous silicon hydride (a-Si:H) is a kind of non-single crystal semiconductor, and it has sensitiveness about 500nm to the visible light in the 600nm greatly for wave-length coverage, and can utilize photoelectric effect to produce electric charge.
Therefore, can be similar to the optical pickocff of making by silicon metal and produce for example photodiode of the optical pickocff made by non-monocrystalline silicon.
In addition, because use the optical pickocff manufacturing process of non-single crystal semiconductor almost just the same, so can easily produce in conjunction with the two dimension sensor of TFT and optical pickocff with the tft array manufacturing process of LCD.
So, if adopted the optic sensor array that uses non-single crystal semiconductor, just can produce very large optical pickocff.
If such large tracts of land transducer is used as the document scanner that makes the digital document on the paper medium and the transducer of photocopier, so just no longer need to utilize the scanning of dwindling optical system and line sensor, can shorten time of reading original copy and the picture quality that improves institute's reading images.
In addition, by combining with above-mentioned optical pickocff with the fluorophor that radiation is converted to visible light, described optical pickocff just can be used as optics (electromagnetic radiation) transducer of image pickup.
Has higher anti-X ray because compare with silicon metal such as non-single crystal semiconductors such as amorphous silicons, and because non-single crystal semiconductor can be by large tracts of land formation equably, so utilize non-single crystal semiconductor just can easily realize having the transducer of human body X radiography required size.
Nowadays, digital X-ray image pick up equipment (image pickup) has dropped into actual use.The digital X-ray image pick up equipment is combined electrooptical device and wavelength shifter (for example radiation being converted to the fluorophor of visible light).Electrooptical device is arranged pixel according to the row and column two dimension.On such as dielectric substrate such as glass substrate, the photo-electric conversion element that each pixel all will be formed by non-single crystal semiconductor (for example amorphous silicon) with combine such as switch elements such as TFT.
Circuit diagram among Fig. 4 demonstrates the image pickup units in the digital X-ray image pick up equipment.
This image pickup units is by forming with the lower part: the photo-electric conversion element 307 of a plurality of pixels of two-dimensional arrangements, each pixel all use TFT as switch element and use MIS type photo-electric conversion element as photo-electric conversion element; The drive circuit 301 of the conduction and cut-off of control TFT; By the signal amplifier circuit 304 that amplifier 305 constitutes, wherein each circuit amplifies from the signal of telecommunication of each TFT output; Sampling hold circuit 302 is used for the signal from signal amplifier circuit 304 is kept a period of time, till these signals are transferred to A/D converter 306; Multiplexer circuit 303 is used for reading in chronological order the signal of telecommunication that remains on sampling hold circuit 302; A/D converter 306, being used for the analog signal conversion from multiplexer circuit 303 outputs is digital signal; Probe power 308 is used for providing opto-electronic conversion necessary voltage to photo-electric conversion element; And the power supply (Vcom) 309 and the power supply (Vss) 310 that is used to TFT is ended that are used to make the TFT conducting.
In addition, provide the probe power 308 of opto-electronic conversion required voltage to be equipped with a plurality of voltage sources, a voltage is used to refresh, a voltage is used for opto-electronic conversion, this is because MIS type photo-electric conversion element need refresh, described in the disclosed patent application No.H09-288184 of Japanese unexamined.
In the image pickup units of Fig. 4, a signal line is shared by a plurality of pixels on the column direction, and a gate line is shared by a plurality of pixels on the line direction.In addition, be used for providing the bias line of bias voltage to share by all pixels to photo-electric conversion element.
In addition, image pickup units has adopted a kind of like this form: in fact provide two image pickup units, and in two image pickup units each can be driven independently.
In addition, drive circuit 301 is not essential in the both sides of gate line entirely, when enough hour of the cloth line resistance of gate line, can be only provide drive circuit 301 in a side of gate line.
Sectional view among Fig. 5 shows the cross-sectional structure of a pixel in the electrooptical device 307.
This pixel use TFT 416 is as switch element and use MIS type photo-electric conversion element 417 as photo-electric conversion element.TFT 416 is at least by forming with the lower part: the gate electrode 315 that is formed by aluminum or aluminum alloy on such as dielectric substrate such as glass 401; The insulating barrier 402 that on gate electrode 315, forms by amorphous silicon nitride film, this is the non-single crystal semiconductor film of an insulating properties; By the semiconductor layer 403 that amorphous silicon hydride (a-Si:H) forms, this is a kind of non-single crystal semiconductor; By N with negative conductivity
+The impurity semiconductor layer 404 that the type amorphous silicon forms, the purpose that forms this layer is to realize ohmic contact between semiconductor layer 403 and the drain electrode 406 and between semiconductor layer 403 and source electrode 405; The source electrode 405 that forms by aluminum or aluminum alloy; And drain electrode 406.
MIS type photo-electric conversion element 417 is formed on the dielectric substrate (for example glass substrate) 401, has also formed TFT 416 on this substrate.MIS type photo-electric conversion element is by forming with the lower part: the lower electrode layer 407 that is formed by aluminum or aluminum alloy; The insulating barrier 408 that on sensor lower electrode layer 407, forms by amorphous silicon nitride film, this is a non-single crystal semiconductor film; By the photoelectric conversion layer 409 that a-Si:H forms, this layer is non-single crystal semiconductor and absorbs visible light to produce electric charge; By N with negative conductivity
+The impurity semiconductor layer 410 that the type amorphous silicon forms, the purpose that forms this layer are to stop the hole to be injected into the photoelectric conversion layer 409 from bias line 313; Upper electrode layer 411, this layer be form by transparency electrode such as ITO and as applying the electrode of photo-electric conversion element 417 required voltages; And bias line 313, it is made by aluminum or aluminum alloy, and purpose is to provide voltage to photo-electric conversion element 417, so that bias voltage to be provided.
Here, because the layer structure of TFT 416 and MIS type photo-electric conversion element 417 is mutually the same basically, so form TFT 416 simultaneously and MIS type photo-electric conversion element 417 has been simplified their manufacturing process, and can improve productive rate and reduce to make the cost of transducer.
In addition, TFT 416 and transducer can form independently of each other.
In this case, complicated although compare manufacturing process with the situation that forms simultaneously, because the film thickness of each layer can be optimized, to be suitable for purpose separately, so compare with the situation that forms simultaneously, the performance of transducer is improved.
In recent years, in the digital X-ray image pick up equipment, consider that from picture quality and the angle that reduces patient's radiological dose the sensitivity of digital X-ray image pick up equipment has been regarded as important factor.In addition, for the digital X-ray image pick up equipment being applied to the patient is carried out in the application of long-time X-radiation (for example fluoroscopic examination or CT), be necessary to increase as much as possible the area of the optical pickocff that occupies a pixel, be that the aperture is than (aperture ratio), to improve the sensitivity of transducer.
Though when making device for hole diameter enlargement than the size that has reduced switch element, the interval between photo-electric conversion element, switch element and every the distribution is narrowed down, and has taked other measures, still have limitation in the method.
Effective method be with photo-electric conversion element form can with the switch element overlaid, and between switch element and photo-electric conversion element, interlayer insulating film is arranged.
Utilize this method, the aperture ratio can improve significantly.
Yet there is following problem: when on switch element, forming interlayer insulating film, photo-electric conversion element etc., find that there is defective in it, can not repair this switch element so if form the back at switch element.
Here, repair and to finish following processing exactly: utilize laser etc. to burn a part or the whole element of defective switch element, and change switch element into harmless state.
For example, when between as the source electrode of the TFT of switch element and drain electrode, being short-circuited, repairing this TFT and will finish following processing exactly: utilize source electrode and the drain electrode of this TFT of laser cutting, to stop the function of TFT self, like that.
By the defective in the digital radioscopic image pick device is repaired, can suppress of the influence of the defective of TFT, and can obtain the stabilisation of picture quality the normal pixel around the pixel that is positioned at this TFT.The defective that makes TFT is that zero reality is difficult to realize that actual conditions are that a plurality of TFT are repaired not cause any quality problems physically.Therefore, if defective switch element is not carried out any reparation, productive rate can descend so, thereby influences cost on sizable degree.
Yet, under being formed on interlayer insulating film, photo-electric conversion element etc. such as the state on the switch elements such as TFT, in the electrooptical device of digital X-ray image pick up equipment, except the thickness of the photoelectric conversion layer of photo-electric conversion element is big, also exist the top electrode of making by metal material.As a result, be difficult to determine the exact position of switch element from the topsheet surface of electrooptical device.
Therefore, when repairing defective switch element, can consider a kind of like this method: promptly utilize the radiation of more weak relatively laser beam to remove the element that is placed on the switch element in advance, for example photo-electric conversion element, interlayer insulating film etc., so that electrooptical device is in the state that can be verified, utilize laser to burn TFT then.
Because this method is carried out laser emission to top element under the state of accurate position the unknown of switch element, so productive temp in the manufacturing process (tact) and productive rate can not keep well always, this is attributed to the damage of surrounding pixel, the factors such as complexity of treatment process.
Therefore, if do not solve the problem of manufacture view, on switch element, comprise the electrooptical device of photo-electric conversion element so and use the commercial survival ability of the image pickup of electrooptical device just problem to be arranged.
As shown in Figure 6, the present laser repairing equipment that uses utilizes special microscope to assemble wave-length coverage greatly about the laser of 1000nm to 200nm, with the material on the evaporation or the convergence plane that is positioned at laser that distils.
In Fig. 6, laser repairing equipment is equipped with lasing light emitter 501, reflective optics 502, dwindles optical system/microscope 503, slit (slit) 504, CCD camera 505, sample 506, laser 507 and image 508.
In handling operation,, utilize the image of the sample that microscopic examination arrives to laser emission when processing plane that microscopical focus is adjusted to sample during with radiation laser.When as mentioned above, be positioned at photo-electric conversion element or interlayer insulating film when following as the switch element of process object, just laser focusing can not be gone up in position.
In addition, the disclosed patent application No.2004-179645 of Japanese unexamined discloses a kind of technology of an opening as the position detection part of restoration switch element that form in corresponding to the zone of switch element.
Yet also have following problem: when forming opening in photo-electric conversion element, the aperture of pixel descends than the sensitivity of decline and electrooptical device.
Summary of the invention
Thus, the purpose of this invention is to provide a kind of when the switch element of repairing such as TFT one class, the technology that the sensitivity of electrooptical device is not descended.
The present invention is a kind of electromagnetic radiation detection device, comprise dielectric substrate, be placed on the switch element on this dielectric substrate, the parts that are placed on the photo-electric conversion element on this switch element and are used for the position of label switch element, these parts are placed on the described photo-electric conversion element, are the devices that is used to solve described problem.
In addition, the present invention is a kind of radiation detecting apparatus, comprise dielectric substrate, be placed on switch element on this dielectric substrate, be placed on the photo-electric conversion element on this switch element, the parts that are placed on the wavelength conversion body on this photo-electric conversion element and are used for the position of label switch element, wherein said wavelength conversion body converts radiation to light, and the described parts that are used for the position of label switch element are placed between photo-electric conversion element and the wavelength conversion body.
In addition, the present invention is a kind of laser processing method of electromagnetic radiation detection device, described electromagnetic radiation detection device comprises dielectric substrate, is placed on the TFT on this dielectric substrate and is placed on the conversion element that is used for electromagnetic radiation is converted to the signal of telecommunication on the described TFT that described method is included in the first step of the parts of the position that is formed for the label switch element on the described conversion element; Locate second step of the parts of the position that is used for the defective switch element of mark; And utilize emission laser to shine the third step of described parts.
According to the present invention, at the photoelectricity electromagnetic radiation detection device with in such as the dimension sensor in the radiation detecting apparatus such as radioscopic image pick device, even on TFT, form photo-electric conversion element so that during sensitization, also can under the situation of the sensitivity that does not reduce transducer, repair TFT.
Description of drawings
Figure 1A and 1B are the figure that first embodiment of the present invention is shown;
Fig. 2 A and 2B are the figure that second embodiment of the present invention is shown;
Fig. 3 illustrates the exemplary plot that the X ray checkout equipment is applied to the radiodiagnosis system, and this X ray checkout equipment is an example according to radiation detecting apparatus of the present invention;
Fig. 4 is the circuit diagram that is illustrated in an image pickup units in the digital radioscopic image pick device;
Fig. 5 is the sectional view that the cross-sectional structure of a pixel in the dimension sensor is shown; And
Fig. 6 is the block diagram that laser repairing equipment is shown.
Embodiment
Describe below with reference to the accompanying drawings and be used to implement optimum implementation of the present invention.In addition, in this manual, photo-electric conversion element not only is confined to and will be converted to the element of electric charge such as visible light, infrared light, ultraviolet light etc., also comprises being converted to the element of electric charge from outside next electromagnetic radiation.That is to say that what enter described element not only is confined to light, can also be the electromagnetic radiation that comprises X ray, alpha ray, β ray and gamma-rays etc.In addition, opto-electronic conversion is considered to a kind of like this phenomenon: it not only is confined to and will be converted to electric charge such as visible light, infrared light, ultraviolet light etc., and also conversion comprises the electromagnetic radiation of the radiation such as X ray, alpha ray, β ray and gamma-rays that for example come from the outside.
(first embodiment)
Figure 1A and 1B are the figure that first embodiment of the present invention is shown.
Figure 1A and 1B show the front view (Figure 1A) and the sectional view (Figure 1B) of the pixel in the radioscopic image pick device of first embodiment of the present invention.In Figure 1A and 1B, for describe the present invention convenient for the purpose of, omitted as X ray being converted to such as the fluorescent material of light wavelength conversion bodies such as visible light, protective layer and binder course on the photo-electric conversion element.In addition, with in the prior art similarly element use with prior art in identical label indicate, and omit detailed description to them.
Shown in Figure 1A and 1B, the present embodiment has been as providing on the glass substrate 401 of dielectric substrate TFT 416 as switch element, and places photo-electric conversion element 417 on TFT 416.
TFT 416 is by gate electrode 315, gate insulation layer 402, channel layer 403, N
+Compositions such as type amorphous silicon layer 404, first main electrode (source electrode), 405 and second main electrode (drain electrode) 406, wherein first main electrode and second main electrode have constituted source electrode or drain electrode respectively.
In addition, photo-electric conversion element 417 is by sensor lower electrode layer 407, insulating barrier 408, photoelectric conversion layer 409, N
+Compositions such as type amorphous silicon layer 410, transparency electrode 411.
In the present embodiment, shown in the sectional view of Figure 1B, flattening surface when the interlayer insulating film of being made by organic material 701 is used to guarantee the insulating properties between TFT 416 and the photo-electric conversion element 417 and forms photo-electric conversion element 417 on TFT 416 is handled, so that improve the aperture ratio of pixel.
The use of interlayer insulating film 701 is for when utilizing thin inorganic dielectric layer (for example silicon nitride film) to form photo-electric conversion element 417 on TFT 416, avoids the fault of the TFT 416 that causes because of the voltage that puts on photo-electric conversion element 417.In addition, the use of interlayer insulating film 701 also is to increase for fear of the electric capacity between photo-electric conversion element 417 and the holding wire 314, to avoid the increase of noise.
The thickness of organic insulating film several m that must have an appointment, so that guarantee enough insulating properties, but this thickness depends on dielectric constant.Therefore, under the situation of using the low-down insulating material of dielectric constant, if organic insulating film exists, its thickness can be 1m or littler.
Photo-electric conversion element 417 in the present embodiment is MIS type photo-electric conversion elements.
MIS type photo-electric conversion element is to utilize photoelectric conversion layer 409 to receive the visible light that sends from fluorophor, converts the element of electric charge to the light that will receive.
In MIS type photo-electric conversion element, the electric charge of generation is stored between photoelectric conversion layer 409 and the insulating barrier 408.
By when making TFT 416 conductings from holding wire 314 flow into and between photoelectric conversion layer 409 and insulating barrier 408 charge stored have the electric charge of same charge, thereby finish reading to institute's stored charge.
In the present embodiment, photo-electric conversion element 417 uppermost parts be formed on when carrying out laser repairing as guide member, be used to detect the label 901,902 and 903 of repairing the position.
Label 901,902 and 903 is respectively formed at first main electrode (source electrode), 405, second main electrode (drain electrode) 406 of TFT 416 and the top of gate electrode 315, and wherein each electrode all becomes processed part when repairing, shown in Figure 1A.
By the technology (for example, laser is pruned) that under the guiding of label 901,902 and 903, disconnects these three electrodes 405,406 and 315, TURP between TFT 416 and other distributions can be broken, thereby can solve the problem that the defective because of TFT 416 causes.
Launch laser by focusing on label 901,902 and 903, just can handle each electrode of TFT 416 exactly.
The pattern of label not only can be the such straight line of the label 901,902 and 903 shown in Figure 1A, can also be point, dotted line or other shape variants.In addition, can adopt length, width and direction based on label 901,902 and 903 with two or more patterns that combine in label 901,902 and 903.
In addition, can adopt the shape of the letter U that forms by label 901,902 and 903 is linked together, by label 901,902 and 903 being linked together so that surround the alphabetical O shape that TFT 416 parts form.
In this case, when certain the position detection marks thing 901,902 on photo- electric conversion element 417 and 903, as long as the pattern of label 901,902 and 903 is different from the pattern that does not form those parts of label 901,902 and 903 at least on photo-electric conversion element 417, just can detect label 901,902 and 903.
In addition, can the color of label 901,902 and 903 be detected.At this moment, as long as at least a or multiple in tone, saturation and the brightness of label 901,902 and 903 color is being different from those parts that do not form label 901,902 and 903 on the photo-electric conversion element 417 on the characteristic, just might be in detectable scope on the photo-electric conversion element 417 certification mark thing 901,902 and 903.
And, shown in Figure 1B, can come the position of certification mark thing 901,902 and 903 based on the difference in height between the top of the top of label 901,902 and 903 and photo-electric conversion element 417.
So, the combination of two or more in tone, saturation and the brightness of the preferred pattern that is based on label 901,902 and 903, color comes certification mark thing 901,902 and 903, so that label 901,902 and 903 is detected more exactly.
In addition, as long as laser repairing equipment comprises camera and is used to carry out the device of image processing, for example circuit or software, and identification icon (promptly automatically, the tone of color, saturation and brightness or overhead height with its around different parts) shape to finish the location, just can be by allowing laser repairing equipment identification tag 901,902 and 903 realize the automation of position fixing process.
The material that is suitable for forming label 901,902 and 903 in the present embodiment can be opaque or translucent material, be formed in conductive membrane or the insulation film, for example, except that metal (for example aluminium), also has the film of making by photoresist or amorphous silicon.
In addition, preferably in detectable scope, form label 901,902 and 903 meticulous as far as possible and thin, not stop the light that arrives photo-electric conversion element 417 as much as possible.In addition, trnaslucent materials preferably.
In addition, preferably, the material that is used as the fluorophor of wavelength conversion body is to comprise Gd
2O
2S, Gd
2O
3With the material of one of CsI as Main Ingredients and Appearance.
In addition, though in the present embodiment, label all is formed on and corresponding three positions of each electrode of TFT, and the quantity of label of the present invention is not limited to this quantity.Acceptable is to form a label at least corresponding to an electrode.Second main electrode (drain electrode), the 406 corresponding labels that are desirable to provide especially and link to each other with holding wire 314.
(second embodiment)
Fig. 2 A and 2B are the figure that second embodiment of the present invention is shown.
Fig. 2 A and 2B show the front view (Fig. 2 A) and the sectional view (Fig. 2 B) of a pixel in the radioscopic image pick device of second embodiment of the present invention.In Fig. 2 A and 2B, for the purpose of describing the present invention conveniently, be omitted in the fluorescent material, protective layer and the binder course that X ray are converted to visible light on the photo-electric conversion element.
In the present embodiment, use the label identical with first embodiment represent with first embodiment in finish the element of identical function.
This embodiment utilizes similar configuration to realize the improvement of aperture ratio.
Photo-electric conversion element in the present embodiment is a PIN type photo-electric conversion element.
In PIN type photo-electric conversion element, the visible light that gives off from fluorophor is received and is converted into electric charge by photoelectric conversion layer.Then, the electric charge that is produced passes the N that only can conduct negative carrier
+The type amorphous silicon layer is to be stored in the parasitic capacitance on the source electrode that is formed at TFT.
By being stored in the inflow of the electric charge in the electrode of source when the TFT conducting, finish reading to described electric charge.
In the present embodiment, similarly, be similar to first embodiment, when carrying out laser repairing, be formed on the superiors' part of photo-electric conversion element as the label 901,902 and 903 of guide member.
Shown in Fig. 2 A, label 901,902 and 903 is respectively formed at the corresponding position, position on first main electrode, second main electrode and the gate electrode with the place of handling when repairing.
By reparation to these three electrodes, TFT can and other distributions between TURP disconnected, and the defective that causes of damage that can modifying factor TFT.
By laser focusing is carried out laser emission on label 901,902 and 903, can handle each electrode of TFT exactly.
In addition, if the equipment of the pattern that laser repairing equipment is a kind of automatic identification to be used to locate, just can be by allowing laser repairing equipment identification tag 901,902 and 903 realize the automation of location.
The material that is suitable for forming label 901,902 and 903 in the present embodiment can be opaque or translucent material, be formed in conductive membrane or the insulation film, for example, except that metal (for example aluminium), also has the film of making by photoresist or amorphous silicon.
In addition, preferably form label 901,902 and 903 meticulous and thin, not stop the light that arrives photo-electric conversion element 417 as much as possible.In addition, trnaslucent materials preferably.
Like this, application of the present invention is just irrelevant with the form of photo-electric conversion element.
(the 3rd embodiment)
Fig. 3 shows the example that the X ray checkout equipment is applied to the radiodiagnosis system, and described X ray checkout equipment is the example according to radiation detecting apparatus of the present invention.
Patient's chest 6062 or object 6061 are passed through in X ray 6060 transmissions that X-ray tube 6050 produces, and enter the X ray checkout equipment 6040 that scintillator (scintillator) is installed on top.
The information of relevant patient's 6061 inside is included in the X ray that enters.
Scintillator is luminous in response to the incident of X ray, and the light of being launched is by opto-electronic conversion.So can obtain electrical information.
This information is converted into digital signal, and is subjected to the image processing as the image processor 6070 of signal processing apparatus.Like this, just can utilize the display 6080 that in the control room, is used as display unit to watch image.
In addition, described information can also be passed through transmission processing device, and for example telephone wire 6090 grades are sent at a distance, may be displayed on the display 6081 that the Medical Treatment Room that is arranged in another place is used as display unit, perhaps is stored in tape deck for example in the CD etc.Like this, Yuan Chu doctor just might diagnose patient 6061.
In addition, can utilize as the film processor 6100 of tape deck image is recorded on the film 6110 as recording medium.
In addition, though the detected object of radiation detecting apparatus is restricted to X ray in the present embodiment, detected object is not limited to X ray.Alpha ray, β ray and gamma-rays can be used as detected object equally.
In addition, the present invention also can be applied to radiation directly is converted to the direct conversion hysteria radiation detecting apparatus of the signal of telecommunication.In this case, amorphous selenium (a-Se), PbI
2, HgI
2Can be used as the semi-conducting material of realizing conversion with CdTe.
Claims (20)
1. electromagnetic radiation detection device comprises:
Dielectric substrate;
Be placed on the switch element on the described dielectric substrate;
Be placed on the photo-electric conversion element on the described switch element; With
Be configured to the position of described switch element is carried out the parts of mark,
Wherein, described parts are placed on the part of described photo-electric conversion element, and described part comprises the zone corresponding with described switch element.
2. according to the electromagnetic radiation detection device of claim 1, wherein
Described switch element has source electrode, drain electrode and gate electrode, and
Described position component is and one of source electrode, drain electrode and the corresponding upper position of gate electrode.
3. according to the electromagnetic radiation detection device of claim 1, wherein said parts are insulating elements.
4. according to the electromagnetic radiation detection device of claim 1, wherein said parts are opaque or semi-opaque feature.
5. according to the electromagnetic radiation detection device of claim 4, wherein said opaque or semi-opaque feature is a conductive component.
6. according to the electromagnetic radiation detection device of claim 1, wherein said parts comprise metal material.
7. according to the electromagnetic radiation detection device of claim 1, wherein said parts comprise the insulation organic membrane.
8. according to the electromagnetic radiation detection device of claim 1, wherein said switch element is TFT.
9. according to the electromagnetic radiation detection device of claim 1, wherein, be used for electrical connection between the distribution that the parts of mark are used to disconnect described switch element and be connected to described switch element is carried out in the position of switch element.
10. according to the electromagnetic radiation detection device of claim 1, wherein
Described switch element has source electrode, drain electrode and gate electrode, and
Described parts corresponding to described source electrode, described drain electrode and described gate electrode in the vertical direction of direction of any one elongation.
11. electromagnetic radiation detection device according to claim 1, wherein, described parts are guide members, thereby corresponding with described switch element, so that mark is carried out in the position of the described part of described switch element.
12. a radiation detecting apparatus comprises:
Dielectric substrate;
Be formed on the switch element on the described dielectric substrate;
Be placed on the photo-electric conversion element on the described switch element;
Be placed on the wavelength conversion body on the described photo-electric conversion element, described wavelength conversion body is configured to radiation is converted to light; With
Be placed on the parts between described photo-electric conversion element and the described wavelength conversion body, described parts are configured to mark is carried out in the position of described switch element,
Wherein, a described part that is used for the parts that mark is carried out in the position of described switch element are placed on described photo-electric conversion element, and described part comprises the zone corresponding with described switch element.
13. according to the radiation detecting apparatus of claim 12, wherein said photo-electric conversion element is a MIS type photo-electric conversion element.
14. according to the radiation detecting apparatus of claim 12, wherein said photo-electric conversion element is a PIN type photo-electric conversion element.
15. according to the radiation detecting apparatus of claim 12, wherein said wavelength conversion body is by comprising Gd
2O
2S, Gd
2O
3Make as the material of Main Ingredients and Appearance with one of CsI.
16., wherein, be used for electrical connection between the distribution that the parts of mark are used to disconnect described switch element and be connected to described switch element is carried out in the position of described switch element according to the radiation detecting apparatus of claim 12.
17. according to the radiation detecting apparatus of claim 12, wherein
Described switch element has source electrode, drain electrode and gate electrode, and
The described parts that are used for mark is carried out in the position of described switch element corresponding to the vertical direction of direction of any one elongation of described source electrode, described drain electrode and described gate electrode.
18. radiation detecting apparatus according to claim 12, wherein, the described parts that are used for the position of described switch element is carried out mark are guide members, thereby corresponding with described switch element, so that mark is carried out in the position of the described part of described switch element.
19. a radiation image picking up system comprises:
Radiation detecting apparatus according to claim 12;
Be used to handle signal processing apparatus from the signal of described radiation detecting apparatus;
Be used to write down tape deck from the signal of described signal processing apparatus;
Be used to show display unit from the signal of described signal processing apparatus;
Be used to send transmission processing unit from the signal of described signal processing apparatus; With
Be used to produce the radiation source of radiation.
20. the laser processing method of an electromagnetic radiation detection device, the conversion element that described electromagnetic radiation detection device comprises dielectric substrate, is placed on the TFT on the described dielectric substrate and is used for electromagnetic radiation is converted to the signal of telecommunication, this conversion element is placed on the described TFT, said method comprising the steps of:
Layout is used for the first step of parts of the position of the described TFT of mark, and described parts are placed on the part of described conversion element, and described part comprises the zone corresponding with TFT;
Locate second step of the parts of the position that is used for the defective TFT of mark; And
Utilize the described parts of laser radiation to disconnect TFT and to be connected to the third step of the electrical connection between the distribution of this TFT.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005172466 | 2005-06-13 | ||
| JP2005172466 | 2005-06-13 | ||
| JP2006151865 | 2006-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1881598A CN1881598A (en) | 2006-12-20 |
| CN100502021C true CN100502021C (en) | 2009-06-17 |
Family
ID=37519705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100926481A Expired - Fee Related CN100502021C (en) | 2005-06-13 | 2006-06-13 | Electromagnetic radiation detection device, radiation detection device and system, and laser processing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100502021C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101997010B (en) * | 2009-08-11 | 2012-12-05 | 元太科技工业股份有限公司 | Digital X-ray detection panel and manufacturing method thereof |
| CN102829858B (en) * | 2011-06-15 | 2014-09-10 | 上海天马微电子有限公司 | Defect detecting and repairing device and method of optical sensor array panel |
| CN105891694B (en) * | 2016-05-04 | 2018-12-28 | 中国工程物理研究院电子工程研究所 | The laser analog radiation dose rate effect test method of silicon-based semiconductor transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4843329A (en) * | 1986-10-23 | 1989-06-27 | International Business Machines Corporation | Method for contactless testing for electrical opens and short circuits in conducting paths in a substrate |
| US6489618B1 (en) * | 1999-07-30 | 2002-12-03 | Canon Kabushiki Kaisha | Radiation image pickup device |
-
2006
- 2006-06-13 CN CNB2006100926481A patent/CN100502021C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4843329A (en) * | 1986-10-23 | 1989-06-27 | International Business Machines Corporation | Method for contactless testing for electrical opens and short circuits in conducting paths in a substrate |
| US6489618B1 (en) * | 1999-07-30 | 2002-12-03 | Canon Kabushiki Kaisha | Radiation image pickup device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1881598A (en) | 2006-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1702458B1 (en) | Radiation image pick-up device and radiation image pick-up method | |
| US7541595B2 (en) | Electromagnetic radiation detecting apparatus, radiation detecting apparatus, radiation detecting system and laser processing method | |
| US7541617B2 (en) | Radiation image pickup device | |
| CN101375397B (en) | Imaging apparatus and radiation imaging apparatus | |
| JP5043374B2 (en) | Conversion device, radiation detection device, and radiation detection system | |
| US7126158B2 (en) | Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system | |
| US7932946B2 (en) | Imaging apparatus and radiation imaging system | |
| JP4307322B2 (en) | Radiation imaging apparatus and radiation imaging system | |
| CN100565895C (en) | Imaging device, radiation imaging and manufacture method thereof | |
| US8637828B2 (en) | Radiation detection element | |
| JP2007049122A (en) | Conversion apparatus, radiation detector, and radiation detecting system | |
| KR101655004B1 (en) | Method for manufacturing x-ray flat panel detector and x-ray flat panel detector tft array substrate | |
| JP2004179645A (en) | Imaging device, radiation imaging device, and radiation imaging system | |
| CN100502021C (en) | Electromagnetic radiation detection device, radiation detection device and system, and laser processing method | |
| CN107068701B (en) | Array substrate for X-ray detector and X-ray detector including the same | |
| CN100539171C (en) | Conversion equipment, radiation detection equipment and radiation detecting system | |
| KR102556234B1 (en) | Array substrate of x-ray detector and digital x-ray detector comprising the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090617 Termination date: 20190613 |