CN100483760C - Method of packaging white LED - Google Patents
Method of packaging white LED Download PDFInfo
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- CN100483760C CN100483760C CNB2007100324918A CN200710032491A CN100483760C CN 100483760 C CN100483760 C CN 100483760C CN B2007100324918 A CNB2007100324918 A CN B2007100324918A CN 200710032491 A CN200710032491 A CN 200710032491A CN 100483760 C CN100483760 C CN 100483760C
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- backlight unit
- photosensitive resin
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Abstract
The invention discloses an encapsulation method of white light emitting diodes. The invention is characterized in that an LED chip and a support of the LED chip are immerged in photosensitive resin doped or smeared with phosphor powder and photopolymerization initiator, and a working current is connected to the tube core of the LED to make the tube core illuminant, and then the photosensitive resin is excited to generate polymerization and encapsulate the LED chip and the support. The invention has the advantages of short preparation time of the LED without molds and high temperature, improving efficiency, saving energy sources, automatically adjusting the distribution of the phosphor powder according to luminescence property of the chip, easily realizing specific coating of the phosphor powder and then achieving uniform white-light emitting or spectral specific emitting.
Description
Technical field
The invention belongs to the encapsulation technology field of light-emitting diode, particularly a kind of method for packing of white light-emitting diode.
Background technology
Because the technological break-through of light-emitting diode, particularly along with the breakthrough of GaN crystal extension technology of preparing, the quality of light-emitting diode, brightness have all had important breakthrough, make to adopt light-emitting diode to replace the trend of current indoor illumination more obvious.In the process of present light source revolution, the method for preparing light-emitting diode is quite important.Because varying environment requires difference to the characteristics of luminescence of light-emitting diode, so requirement can be produced the light-emitting diode of the various different parameters of preparation fast, cheaply.
Adopting the encapsulation LED that photosensitive resin can be quick, economic, is exactly to adopt the method as the patent 6958250 (Yang equals application in 2005) of the U.S..But the encapsulation process that the process of encapsulation and current LED are commonly used is similar, and all will use mould.
The encapsulation of white light-emitting diode has a lot of patents at present in the world, as the patent 3,691,482 (1970) of the U.S., 6,600,175 and Osram that Cree applied in 1996 are in 6,245 of application in 2000,259 and Nicha in 1997 the application 5,998,925, or the like.They adopt traditional method for packing, and the encapsulation process that the process of encapsulation and current LED are commonly used is similar.Current LED production technology is that the tube core of light-emitting diode and support thereof are put in the mould, then resin is poured into mould, adopts the method for heating to make resin polymerization again, and general heating-up temperature surpasses 100 degrees centigrade, and heating time was above 1 hour.Therefore, there is the problem of time consumption and energy consumption in the production technology of existing light-emitting diode.
Summary of the invention
The present invention is directed to packaging technology that light emitter diode seal method of the prior art exists consuming time long, need problem such as high temperature, a kind of method for packing of white light-emitting diode is provided.
The present invention can be achieved by the following technical programs: a kind of method for packing of white light-emitting diode: light-emitting diode chip for backlight unit and support thereof are immersed in have mixed or be coated with in the photosensitive resin of fluorescent material and Photoepolymerizationinitiater initiater, operating current is passed in the LED core, make tube core luminous, and then excite photosensitive resin generation polymerization that diode chip for backlight unit and support thereof are encapsulated, finally form light-emitting diode.
Packaged type of the present invention adopts individual layer encapsulation or multilayer encapsulation.
Diode chip for backlight unit of the present invention is inorganic, organic or high molecular conventional lattice, powerful, illuminating or shows the semiconductive luminescent materials of usefulness.
Operating current of the present invention is the electric current of direct current, interchange, pulse, intensity gradual change or sudden change.
Photosensitive resin of the present invention is epoxy resin or silicones.
Fluorescent material of the present invention is inorganic, organic, metal or biological.
Fluorescent material of the present invention can be solid-state, liquid state or gaseous state.
The application pattern of fluorescent material of the present invention adopts individual layer coating or multilayer coated.
Compared with prior art, the present invention has the following advantages: the present invention's required time when the preparation light-emitting diode is very short, and do not need high temperature, do not need mould, reach and not only raise the efficiency but also the effect of energy savings, and used technology can initiatively be reconciled the distribution of fluorescent material according to the characteristics of luminescence of chip, can be easy to realize the specificity coating of fluorescent material, to realize inhomogeneity white light emission, the perhaps specificity of spectrum emission.
Description of drawings
Fig. 1 is an encapsulation process schematic diagram of the present invention.
Embodiment
As shown in Figure 1, encapsulation process of the present invention is as follows: light-emitting diode chip for backlight unit 3 and support 1 thereof are immersed in have mixed or be coated with in the photosensitive resin 2 of fluorescent material and Photoepolymerizationinitiater initiater, operating current 4 is passed in the LED core 3, make tube core luminous, and then excite photosensitive resin 2 polymerization to take place with diode chip for backlight unit 3 and support 1 encapsulation thereof, finally form light-emitting diode.
The present invention realizes adjusting the uniformity of luminance of light-emitting diode by the uniformity of adjusting fluorescent material.Can realize adjusting the self luminous characteristic of LED core by time, the electric current of adjusting chip light emitting, as uniformity of luminance, fluorescent lifetime, luminous intensity etc., thereby realize inhomogeneity adjustment, make the diode of gained can launch white light fluorescent material.The method is equally applicable to realize that different colours distributes on same light-emitting diode.
Chip of the present invention can be that inorganic semiconductor also can be organic or semiconducting polymer's luminescent material, can be conventional specification, also can be powerful, can be illuminating, also can be to show usefulness.And the self luminous operating current of chip for driving can be direct current, can be to exchange, and can be pulse, can be also can suddenling change of intensity gradual change.
The used potting resin of the present invention is photosensitive, promptly to the photaesthesia of certain wavelength, can be under the irradiation of certain light polymerization reaction take place, and the wavelength of photosensitive wavelength and chip light emitting is close or consistent.Used potting resin is that conventional epoxy resin also can be silicones, perhaps other suitable resins.The component of potting resin all comprises or part comprises following several composition: oligomer, monomer, Photoepolymerizationinitiater initiater, filler, colouring agent and plasticizer.
The used Photoepolymerizationinitiater initiater of the present invention can be carbazoles or pyridine-fluorenes class initator, can be cationic, free radical type, and as acylphosphine oxide, salt, salt compounded of iodine, lithium series initiators or the like.
Fluorescent material of the present invention can be inorganic matter, organic substance, metal or biology, can be with solid-state, liquid and even gaseous state, it can be single variety, also can be that multiple different fluorescent material separates or mixing and doping, as yttrium-aluminium-garnet (YAG) and improvement kind thereof, 8-hydroxyquinoline aluminum, golden nanometer particle, fluorescent RE powder, quantum dot, nanocrystal, nanotube, nano belt or alkaline earth sulfide have bioprotein, DNA and composite construction thereof of biological nature or the like, and its size can be nano level, micron-sized and even the millimeter magnitude.In addition, fluorescent material can with mixed with resin polymerization together, also can apply separately, its application pattern can adopt individual layer coating or multilayer coated.
Adopting the resulting integral device structure of method for packing of white light-emitting diode of the present invention can be macro-size, as millimeter, centimetre size, also can be microscopic dimensions, as nanometer, micron size.And resulting structure can be the individual layer encapsulation, also can be the multilayer encapsulating structure.
Adopt the present invention can adjust the inhomogeneity method for packing of lumination of light emitting diode simply and rapidly, thereby provide new method for illumination revolution, luminous demonstration industry and bioscience life science.
Claims (10)
1, a kind of method for packing of white light-emitting diode, it is characterized in that: light-emitting diode chip for backlight unit and support thereof are immersed in have mixed or be coated with in the photosensitive resin of fluorescent material and Photoepolymerizationinitiater initiater, operating current is passed in the LED core, make tube core luminous, and then excite photosensitive resin generation polymerization that diode chip for backlight unit and support thereof are encapsulated.
2, method for packing according to claim 1 is characterized in that: described packaged type adopts individual layer encapsulation or multilayer encapsulation.
3, method for packing according to claim 1 and 2 is characterized in that: described diode chip for backlight unit is inorganic or organic semiconductive luminescent materials.
4, method for packing according to claim 3 is characterized in that: described diode chip for backlight unit is illuminating or shows usefulness.
5, method for packing according to claim 4 is characterized in that: described operating current is the electric current of direct current, interchange, intensity gradual change or sudden change.
6, method for packing according to claim 5 is characterized in that: described photosensitive resin is epoxy resin or silicones.
7, method for packing according to claim 6 is characterized in that: described fluorescent material is inorganic fluorescent powder, organic fluorescent powder, metal fluorescent material or bioluminescence powder.
8, method for packing according to claim 7 is characterized in that: described fluorescent material is solid-state, liquid state or gaseous state.
9, method for packing according to claim 8 is characterized in that: the application pattern of described fluorescent material adopts individual layer coating or multilayer coated.
10, method for packing according to claim 5 is characterized in that: described diode chip for backlight unit is semiconducting polymer's luminescent material; Described operating current is a pulse current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100324918A CN100483760C (en) | 2007-12-14 | 2007-12-14 | Method of packaging white LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100324918A CN100483760C (en) | 2007-12-14 | 2007-12-14 | Method of packaging white LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101183698A CN101183698A (en) | 2008-05-21 |
| CN100483760C true CN100483760C (en) | 2009-04-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100324918A Expired - Fee Related CN100483760C (en) | 2007-12-14 | 2007-12-14 | Method of packaging white LED |
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| CN (1) | CN100483760C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253195A (en) * | 2013-06-27 | 2014-12-31 | 凌敬平 | Method for making white light LED |
| CN103666448A (en) * | 2013-12-04 | 2014-03-26 | 广西玖典电子新材料有限公司 | LED organic fluorescent powder sizing material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3691482A (en) * | 1970-01-19 | 1972-09-12 | Bell Telephone Labor Inc | Display system |
| US6958250B2 (en) * | 2003-08-26 | 2005-10-25 | Yung-Shu Yang | Light-emitting diode encapsulation material and manufacturing process |
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2007
- 2007-12-14 CN CNB2007100324918A patent/CN100483760C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3691482A (en) * | 1970-01-19 | 1972-09-12 | Bell Telephone Labor Inc | Display system |
| US6958250B2 (en) * | 2003-08-26 | 2005-10-25 | Yung-Shu Yang | Light-emitting diode encapsulation material and manufacturing process |
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| CN101183698A (en) | 2008-05-21 |
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