CN100470340C - Film crystal tube printing mfg. method - Google Patents
Film crystal tube printing mfg. method Download PDFInfo
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- CN100470340C CN100470340C CNB2004100969168A CN200410096916A CN100470340C CN 100470340 C CN100470340 C CN 100470340C CN B2004100969168 A CNB2004100969168 A CN B2004100969168A CN 200410096916 A CN200410096916 A CN 200410096916A CN 100470340 C CN100470340 C CN 100470340C
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Abstract
The invention discloses a thin film transistor printing process method that includes the following steps: the method of defining printing image on crystal material, photoresist material, curing material and chemical electroless plating nm metal, deoxidizing the metal ion and depositing metal material to form metal conductor arrangement on basal board. The product made by the method could be used to manufacture panel display. It could sharply decrease the material and device cost.
Description
Technical field
The present invention relates to a kind of thin film transistor (TFT) (TFT) printing process, refer in particular to nano metal material collocation printing process and carry out the making of gate in the thin film transistor (TFT), drain electrode, source electrode Low ESR conductive metal film.
Background technology
Known technology thin film transistor (TFT) array (TFT Array) processing procedure in LCD (LCD) production line is that the vacuum coating (vacuum deposition), the gold-tinted that adopt the IC industry develop and etch process making pattern (pattern).But along with the panel area constantly increases, the vacuum coating mode will have the too high problem of process apparatus cost.Because the back processing mode forms the technology of pattern (pattern) and use quite success and extensive on the electronics optoelectronics industry, the technology of wherein knowing the most is little shadow statue art (Lithography), it utilizes exposure, development, the etching of photoresist to make the circuit of micron or nanometer laminar, but since consumables associated therewith expensive and obtain difficult, so the research of the little shade of many nanometers pass transfers cheaper printing process to.
Under the too high consideration of identical cost, in the display industry, because the increase of panel size makes little shadow statue art also face extreme challenge, so develop and a kind of printing process, be broadly divided into relief printing plate (relief printing), intaglio plate (intaglio printing) etc., usually in order to reach continuous purpose fast, how the continuous or large-area mode of sheet is printed with drum-type, it is used as printed circuit board (PCB), laminated ceramic electric capacity (Multilayer Ceramic Capacitor), LTCC (Low-Temperature Cofired Ceramics, LTCC), on the electronics industries such as battery strip, but generally be subject to its precision.
Whitesides in 1993 finds that the unimolecular layer contact printing can overcome the defective that the pattern corner subsides and is squeezed and causes with coating in masterplate, promote print definition toward the nanometer level.Wherein Whitesides proposes a soft little shadow technology (soft lithography), the Michael Austin of Princeton University's department of electrical engineering and affiliated Stephen Chou research group are still arranged, attempt for the first time with nano imprint etching (Nanoimprint Lithography, NIL) mode has been made the macromolecule organic thin film transistor (TFT), and the stepping flash type that more has Wilson to propose impresses little shadow technology (step and flash imprint lithography).
And Whitesides carry is contact printing, and what Austin/Chou and Wilson carried is stamping technique, and wherein the stamping technique that Austin/Chou carried is applicable to thermosetting material, and the stamping technique that Wilson carried then combines the technology that sensitization is solidified.No matter the maximum challenge of contact printing or impression printing also must precisely be controlled the contraposition mechanism of piling up except the resolution of individual layer pattern, electrical with lift elements.
Conductive in thin-film transistor element be to use at present sputter (sputtering) with deposit metal films such as MoW, Al, Mo on base material, developing in coating photoresist post-exposure obtains required pattern, obtains pattern with etching mode again.But when the panel area increases gradually, the too high problem of equipment cost will be arranged.
As U.S. Pat 6,329, No. 226 a kind of methods of making thin film transistor (TFT) of exposure, its structure can be consulted the thin-film transistor structure synoptic diagram shown in Figure 1A, and its fabrication steps comprises shown in Figure 1B: (1) makes gate electrode 120 on base material 110; (2) gate electrode of oxidized portion is to form gate pole oxidation layer 130; (3) on gate pole oxidation layer 130, make source electrode 140 and drain electrode 150; (4) in this gate pole oxidation layer 130, source electrode 140, drain electrode 150, make one deck organic semiconductor layer 160.Another embodiment then makes gate electrode on (1) base material; (2) anodic oxidation part gate electrode forms gate pole oxidation layer; (3) on gate pole oxidation layer, make organic semiconductor layer; (4) on organic semiconductor layer, make source electrode and drain electrode.In above-mentioned; in source electrode 140, drain electrode 150 making, adopt and carry out electroless-plating earlier and plate one deck silver; utilize the mode of contact print to stamp one deck self-assembled monolayer molecular film (SAM; self-assembled monolayer) defines figure; utilize chemical etching (wet chemical etching) to remove not to be subjected to the silver metal of self-assembled monolayer molecular film protection, remove this self-assembled monolayer molecular film at last.
In another known embodiment, U.S. Pat 6,413, disclose a kind of thin film transistor (TFT) method that display is used of making for No. 790, its structure can be consulted synoptic diagram shown in Figure 2, it is the structure of gate (bottom-gate) thin film transistor (TFT), comprise and form a gate 11 on the substrate 10, forming a thin-film dielectric layer 16 again covers on it, form semiconductor layer 15 thereupon, deposition drain electrode 12 at last and source electrode 13, and the pixel electrode of this thin film transistor (TFT) (pixel electrode) 14 also forms thereupon.
Wherein gate 11 can be made of the wire mark mode, the material conducting resinl; And with wire mark and soft little shadow fabrication techniques source electrode 13, drain electrode 12.Mode of printing comprises ink jet printing, intaglio plate, relief printing plate, soft little shadow technology etc.; As the employed material of the conductive layer of pixel electrode 14 conducting polymer, conducting resinl, metallic colloid particulate are arranged.Mentioned more in the instructions that research team stamps palladium (Pd) metallic colloid particulate with little contact and forms pattern, formed metal wiring with electroless-plating copper then.
With No. 6,329,226, above-mentioned U.S. Pat,, need the step of chemical etching that graphical definition is gone out though the metal wiring resistance value is quite low.And No. 6,413,790, U.S. Pat is carried out metal wiring with metallic conduction glue, conducting polymer etc., and its resistance is all omited and disliked the too high display that can't be suitable in the future toward the large tracts of land development.
In the above technology, if during with printing process, the corresponding metal material can adopt heat curing-type or light solid type slurry, conducting polymer or metallic colloid particulate etc.Wherein, the synthetic preparation of metal-powder, particle diameter, shape, dispersing characteristic, solid content all have absolute influence for the resistance value that is shaped after solidifying.For being limited to the simple metal film on its highest electric conductivity of the metal material of selecting for use, therefore adopt the mode of metal paste to be difficult to meet the requirements; Though and the metallic colloid particulate is mainly metal, similar problem is arranged at aspects such as microparticulate, particle diameter, shape, dispersing characteristic, solid content and metal paste.
The silver-plated ultimate principle of chemical method is a kind of silver salt liquid (AgNO
3) reduction by the reductive agent material, the silverskin of separating out superfine granularity on glass or amorphous silicon (amorphous Silicon) material or general plastic basis material surface, its processing procedure can be consulted U.S. Pat 5,716, the method (Coating Liquid and Method for FormingSilver Filmon Substrate using same) that forms silverskin is gone up in 433 exposure at base material (substrate), wherein coat and comprise the ammoniacal liquor (ammoniacal aqueous) that contains silver nitrate (silver nitrate) in the liquid on the base material at least, the aqueous solution that contains reductive agent (reducer) and highly basic ... etc., and need prepare base material once surperficial acidification, the aqueous solution with modulation forms a silverskin on base material again.
Silver-plated mode is commonly called as silver mirror reaction, comprise slice, wash away, step such as scouring, prewashing, sensitization, activation, silver-plated, dry, oven dry, cooling, surface clean, drying, check,, and further develop and come 1830 designed by Drayton by afterwards Liebig.It is as follows to utilize the silver-colored complex ion of reduction to obtain its reaction of silver metal:
2AgNO
3+2NH
4OH<->Ag
2O+2NH
4NO
3+H
2O
Ag
2O+4NH
4OH<->2[Ag(NH
3)
2]OH+3H
2O
[Ag(NH
3)
2]OH+NH
4NO
3<->[Ag(NH
3)
2]NO
3+NH
4OH
Usually the above-mentioned solution of preparing can be described as toillen's reagent (Tollen ' s agent).Reductive agent then to use acetaldehyde (Aldehyde) to be example, can be separated out silver:
2[Ag(NH
3)
2]OH+RCHO→2Ag+4NH
3+RCOOH+H
2O
Except above-mentioned acetaldehyde, still there is multiple reductive agent on the electroless-plating of silver, to use, commonly used comprise 14 kinds of commercial reductive agent formalin; Dextrose; Rochell salts; Rochelle salts+silver nitrate; Glyoxal; Hydrazine sulfate; Aboiled mixture solution of Rochelle salts and crystallized sugar; Sugar inverted by nitric acid; KBH
4Or DMAB; Aldonic acid and aldoniclactone; Cobalt ion; Sodium sulfide; Triethanol amine; CH
2OH (CHOH)
nCH
2OH (n=1-6).
Because known technology can't be suitable for the processing procedure of large area film transistor display, the inventor proposes a kind of film crystal tube printing mfg method of the present invention promptly in conjunction with printing process and chemical silvering nano metal material advantage.
Summary of the invention
The technical problem to be solved in the present invention is: a kind of film crystal tube printing mfg method is provided, this film crystal tube printing mfg method adopts nano-solution material collocation printing process to carry out the making of gate in the thin film transistor (TFT), drain electrode, source electrode Low ESR conductive metal film, and be applicable to the making of large tracts of land panel, wherein, can provide high speed printing and requirement cheaply in conjunction with printing process and chemical silvering nano metal material advantage.
For this reason, one of embodiment of the film crystal tube printing mfg method of the present invention's proposition includes: carry out the surface treatment of substrate; The printing seed crystal material defines print pattern on substrate; Soak and put substrate and comprise in the metal ion solution in one; Reducing metal ion, and the metal material of deposition reduction; Form metal wiring at last.
Two of the embodiment of this manufacturing method thereof includes: the preparation substrate, carry out the surface treatment of substrate; Printing module and photoresist material; The printing lithographic glue material forms a photoresist layer on substrate; The definition pattern; Soak and put substrate and contain in the metal ion solution in one; The reducing metal ion, and on this substrate deposit metallic material; Remove this photoresist material; With the formation metal wiring.
Three of the embodiment of this manufacturing method thereof includes: preparation substrate, printing module and curing materials, and use this curing materials on this printing module, to define pattern earlier; Carry out the surface treatment of substrate; Printing defines the curing materials of pattern on substrate; Soak and put substrate and contain in the metal ion solution in one; Reducing metal ion, and deposit metallic material; Remove curing materials; Form metal wiring.
Characteristics of the present invention and advantage are: film crystal tube printing mfg method of the present invention, step comprises that the definition print pattern is in a seed crystal material, photoresist material, curing materials, and soak the chemical electroless-plating nano metal method of substrate of putting in solution, again metallic ion is reduced into and deposit metallic material, on substrate, forms metal wiring.Utilize mode of printing combining nano metal material to prepare thin film transistor (TFT) (TFT) medium or low resistance anti-gate (gate) metallic film and drain electrode (drain), source electrode (source) electrode film, be mainly used in the continuous printing process of large tracts of land and make flat-panel screens, can under atmospheric low-temperature, prepare the good gate of electrical properties, drain electrode and source metal film, can significantly reduce material and process apparatus cost, and can be used for printing coating making large tracts of land flexible panel extends roller continuously.
The making of gate in the thin film transistor (TFT), drain electrode, source electrode Low ESR conductive metal film is directly carried out in the exploitation that the present invention is directed to the suitable nano metal material collocation printing process of printing process exploitation, promptly capture in the printing process and to save the metallic film that properties of materials and electroless plating easily obtain good electrical character, so that high speed printing and low cost solution to be provided, and because of in conjunction with printing process and the contour electrical conductivity material of chemical silvering nano metal material, to future display have it to benefit toward the large tracts of land development.
Description of drawings
Figure 1A is a known technology thin-film transistor structure synoptic diagram;
Figure 1B is a known technology method for fabricating thin film transistor flow process;
Fig. 2 is a known technology thin-film transistor structure synoptic diagram;
Fig. 3 A is one of processing procedure structural representation of first embodiment of the invention plane contact mode of printing;
Fig. 3 B be first embodiment of the invention plane contact mode of printing the processing procedure structural representation two;
Fig. 3 C is the processing flow of the first embodiment plane contact mode of printing;
Fig. 4 A is one of processing procedure structural representation of second embodiment of the invention roller mode of printing;
Fig. 4 B be second embodiment of the invention roller mode of printing the processing procedure structural representation two;
Fig. 5 A is one of processing procedure structural representation of third embodiment of the invention roller mode of printing;
Fig. 5 B be third embodiment of the invention roller mode of printing the processing procedure structural representation two;
Fig. 5 C be third embodiment of the invention roller mode of printing the processing procedure structural representation three;
Fig. 5 D is the processing flow of the 3rd embodiment roller mode of printing;
Fig. 6 is the processing flow of the 4th embodiment roller mode of printing;
Fig. 7 A is one of processing procedure structural representation of fifth embodiment of the invention;
Fig. 7 B be fifth embodiment of the invention the processing procedure structural representation two;
Fig. 7 C be fifth embodiment of the invention the processing procedure structural representation three;
Fig. 7 D is the processing flow of the 5th embodiment;
Fig. 8 is the processing flow of the 6th embodiment.
The drawing reference numeral explanation:
Base material 110 gate electrodes 120
Gate pole oxidation layer 130 source electrodes 140
150 organic semiconductor layers 160 drain
12 source electrodes 13 drain
Thin-film dielectric layer 16 plane printing modules 30
Photoresist 56 metal materials 57
Metal wiring 59 roller type printing modules 70
Embodiment
Film crystal tube printing mfg method of the present invention is to adopt nano-solution material collocation printing process to carry out the making of gate in the thin film transistor (TFT), drain electrode, source electrode Low ESR conductive metal film, can save steps such as photoresist (photoresistance) coating, contraposition exposure, development and etching, shorten processing procedure, and be applicable to the making of large tracts of land panel, wherein, can provide high speed printing and low cost solution in conjunction with printing process and chemical silvering nano metal material advantage.
The ultimate principle of the chemical method that the present invention carried silver-plated (seeing also known background technology) is a kind of silver salt liquid (AgNO
3) by the reduction of reductive agent material, at the silverskin that superfine granularity is separated out on glass, amorphous silicon material or general plastic basis material surface, this type of electroless plating of silver is all applicable on any base material.
And this reductive agent can be aldehyde; Dextrose; Rochell salts; Rochellesalts+silver nitrate; Glyoxal; Hydrazine sulfate; A boiled mixturesolution of Rochelle salts and crystallized sugar; Sugar invertedby nitric acid; KBH
4Or DMAB; Aldonic acid and aldonic lactone; Cobalt ion; Sodium sulfide; Triethanol amine; CH
2OH (CHOH)
nCH
2OH (n=1-6).
In addition, known electroless plating of silver is highly unsettled reaction, as long as reaction beginning plating bath will become muddy, this is because reaction is via positively charged silver particles absorption mutually to take place to take place.For the stability of improving silver plating reaction must add some colloids as stabilization agent such as second two ammoniums, gelatin, Arabic gum, organic acid, zinc and plumbous inorganic salts or copper sulfide.Adjusting at the processing procedure pH of traditionally electroless plating of silver is to use NaOH, because the Na ion is the pollution source that must get rid of in semiconductor or thin film transistor (TFT) processing procedure, does not contain (the CH of Na ion with use at this
3)
4NOH as an alternative.The pre-treatment of base material is to concern to electroplate successful key in carrying out electroless plating of silver.
The most frequently used base material is exactly a glass in electroless plating of silver, and the surface of glass is usually with SnCl
2Carry out the sensitization on surface, its principle is water miscible Sn
2+The surface that is adsorbed on glass has increased surperficial negative charge, by Ag like this
+Reduced by Sn and adsorb from the teeth outwards.
And the main mode that can take with nano-solution material collocation printing process among the present invention is for utilizing roller or plane contact mode of printing with seed-solution or sensitized material (available SnCl
2Or the complex ion of Ag) directly defines needed pattern (pattern), carry out the electroless plating nanometer metallic silver then, obtain metal wiring, use copperas solution (FeSO again
4) will on substrate, not wish the part removal of deposition of silver.The processing procedure structural representation of the plane contact mode of printing of its first embodiment is shown in Fig. 3 A and Fig. 3 B.
Fig. 3 A is depicted as the letterpress mode, it utilizes seed crystal material 35 to define print pattern on a plane printing module 30, mode of printing with plane contact directly carries out the electroless-plating nanometer metallic silver on substrate 32, as having plated layer of metal distribution 37 on the substrate 32 among Fig. 3 B, wherein substrate can be conductor, semiconductor, insulating material, and print pattern comprises gate, drain electrode and the source electrode pattern etc. of thin film transistor (TFT).Fabrication steps sees also the key step of the plane contact formula printing process shown in Fig. 3 C:
Step S301: prepare a substrate (can be glass, plastic base), define the plane printing module and (the available SnCl of comprising of the seed crystal material on it of pattern
2Or the sensitized material of the complex ion of Ag);
Step S303: utilize aqua ammonia, Liquor Hydrogen Peroxide and water (NH
4OH:H
2O
2: H
2O) ratio is the pollution of the metallic ion of the solution removal substrate surface that 1:1:6 was made into, and with hydrogen chloride, Liquor Hydrogen Peroxide and water (HCl:H
2O
2: H
2O) ratio is that the solution of 1:1:5 removes organic pollution;
Step S305: seed crystal material is stamped substrate with mode of printing;
Step S307: substrate is dipped in contains in reductive agent, stabilization agent and the solution that metallic ion etc. mixes;
Step S309: the reductive agent in the mat solution restores metal, and mat stabilization agent and GOLD FROM PLATING SOLUTION belong to ion and form metal film on inherent substrate of a time;
Step S311: steps such as drying, cooling, surface clean, remove the part that does not need the metal deposition, one embodiment is as using copperas solution (FeSO
4) will on substrate 42, no metal deposition part remove;
Step S313: form metal wiring.
The part that above-mentioned steps forms metal film can be a silver mirror reaction, wherein coat and comprise the ammoniacal liquor (ammoniacalaqueous) that contains silver nitrate (silver nitrate), the aqueous solution that contains reductive agent (reducer) and highly basic in the liquid on the base material at least ... etc., and need prepare base material after surface treatment, the aqueous solution with modulation forms a metal film on base material again.
And second embodiment of the invention is in the roller mode seed crystal material directly to be impressed on substrate, shown in Fig. 4 A, mat one roller printing module 40, the seed crystal material 45 that before defined pattern is impressed on substrate 42 with mode of printing, again substrate 42 is dipped in and contains in reductive agent, stabilization agent and the solution that metallic ion etc. mixes, reductive agent in the mat solution restores metal, on inherent substrate 42 of a time, form metal film, afterwards through steps such as surface clean, remove the part that does not need the metal deposition, to form metal wiring 47.
The processing procedure structural representation of the 3rd embodiment of printing process of the present invention such as Fig. 5 A to Fig. 5 C roller mode of printing, elder generation's mat one roller type printing module 50, or can be the plane printing module, photoresist material 55 is needed on the substrate 52 in the printing process mode, form a photoresist layer (Fig. 5 A), carry out contactless exposure imaging with photomask (light shield), form the photoresist 56 (Fig. 5 B) of definition pattern after the etching, carry out electroless plating nano metal material 57 then, in non-photoresist district deposit metallic material 57, remove photoresist afterwards and obtain metal wiring 59 (Fig. 5 C).
Right Fig. 5 D then shows the fabrication steps of the 3rd embodiment:
Step S501: prepare a substrate, roller type or plane printing module, photoresist material;
Step S503: carry out the surface treatment of substrate, utilize aqua ammonia, Liquor Hydrogen Peroxide and water (NH
4OH:H
2O
2: H
2O) ratio is the pollution of the solution removal metallic ion that 1:1:6 was made into, and uses hydrogen chloride, Liquor Hydrogen Peroxide and water (HCl:H
2O
2: H
2O) ratio is the organic pollution of solution removal that 1:1:5 was made into;
Step S505: the photoresist material is stamped substrate through mode of printing, form a photoresist layer;
Step S507: carry out contactless exposure, development through photomask, form photoresist after the etching with the definition pattern;
Step S509: carrying out sensitization and handle, promptly is that crystal seed is planted in substrate (as glass substrate) surface, and crystal seed can be SnCl
2Solution or silver-colored complex ion solution;
Step S511: carry out the electroless plating nano metal material, be about to the solution that substrate soaks mixing such as placing metal ion, reductive agent, stabilization agent and restore metal, and in reaction time necessarily, deposit metallic material on substrate;
Step S513: the part of cleaning, remove photoresist;
Step S515: form metal wiring.
Fig. 6 then shows the fourth embodiment of the present invention, similar in appearance to the 3rd embodiment, wherein the step of elder generation to carrying out sensitization with the substrate behind the photoresist definition pattern removed photoresist again, the part of original non-photoresist can attract metallic ion to form metal wiring, reaches the purpose of electroless-plating.Its fabrication steps is as follows:
Step S601: prepare a substrate, roller type or plane printing module, photoresist material;
Step S602: substrate surface is handled, and utilizes aqua ammonia, Liquor Hydrogen Peroxide and water (NH
4OH:H
2O
2: H
2O) ratio is the pollution of the solution removal metallic ion that 1:1:6 was made into, and with hydrogen chloride, Liquor Hydrogen Peroxide and water (HCl:H
2O
2: H
2O) ratio is the organic pollution of solution removal that 1:1:5 was made into;
Step S603: the photoresist material is stamped substrate through roller with mode of printing;
Step S605: expose, form photoresist after the development, etching through photomask;
Step S607: substrate surface being carried out sensitization handle, promptly is that crystal seed is planted in glass surface, also is only non-photoresist partly to be carried out sensitization this moment to handle, and this regional metallic ion deposits the big of other zone of selectivity ratios;
Step S609: the part of cleaning, remove photoresist;
Step S611: soak the solution that places metal ion, reductive agent, stabilization agent etc. to mix;
Step S613: reducing metal, plated metal on substrate;
Step S615: use copperas solution (FeSO
4) will on substrate, not wish the part removal of metal deposition, form metal wiring.
Fig. 7 A to Fig. 7 C is a fifth embodiment of the invention, wherein utilize roller type printing module 70, or can be the plane printing module, with the impression mode of printing heat curing or photo-curing material 55 are directly defined needed pattern (Fig. 7 A) on substrate 72, carry out the electroless plating nano metal then, on substrate 72, form metal material 77 (Fig. 7 B), remove heat curing or photo-curing material afterwards and obtain metal wiring 79 (Fig. 7 C).Its fabrication steps is shown in Fig. 7 D:
Printing process begins;
Step S701: prepare a substrate, roller type or plane printing module, curing materials;
Step S703: substrate surface is handled, and utilizes aqua ammonia, Liquor Hydrogen Peroxide and water (NH
4OH:H
2O
2: H
2O) ratio is the pollution of the solution removal metallic ion that 1:1:6 was made into, and with hydrogen chloride, Liquor Hydrogen Peroxide and water (HCl:H
2O
2: H
2O) ratio is the organic pollution of solution removal that 1:1:5 was made into;
Step S705: the curing materials that will define pattern stamps substrate through mode of printing;
Step S707: substrate is dipped in the sensitized solution, and it is in order to plant crystal seed in substrate (as glass substrate) surface, and one embodiment is with SnCl
2Carry out the sensitization on surface, its principle is water miscible Sn
2+Be adsorbed on the surface of substrate, the crystal grain-growth point is provided, by this, Ag
+Reduced by Sn and adsorb from the teeth outwards;
Step S709: soak the solution that places metal ion, reductive agent, stabilization agent etc. to mix, reducing metal, deposit metallic material on substrate;
Step S711: the part of cleaning, remove curing materials;
Step S713: remaining metal material forms metal wiring.
The 6th embodiment that can take is another embodiment of the 5th embodiment, is behind impression curing materials definition pattern, carries out the sensitization step earlier, removes heat curing or photo-curing material again, carries out the electroless plating nanometer metallic silver at last, obtains metal wiring.Process flow diagram as shown in Figure 8:
Printing process begins;
Step S801: prepare a substrate, roller type or plane printing module, curing materials;
Step S802: substrate surface is handled, and utilizes aqua ammonia, Liquor Hydrogen Peroxide and water (NH
4OH:H
2O
2: H
2O) ratio is the pollution of the solution removal metallic ion that 1:1:6 was made into, and with hydrogen chloride, Liquor Hydrogen Peroxide and water (HCl:H
2O
2: H
2O) ratio is the organic pollution of solution removal that 1:1:5 was made into;
Step S803: the curing materials that will define pattern stamps substrate with mode of printing;
Step S805: substrate surface is carried out sensitization, and one embodiment is that surface treatment is with SnCl
2Carry out the sensitization on surface;
Step S807: the part of cleaning, remove curing materials;
Step S809: soak the solution that places metal ion, reductive agent, stabilization agent etc. to mix;
Step S811: the reducing metal, at the part plated metal of process sensitization on the substrate;
Step S813: use copperas solution (FeSO
4) will on substrate, not wish the part removal of deposition of silver, form metal wiring.
In sum, the present invention is a film crystal tube printing mfg method, utilize mode of printing combining nano metal material to prepare thin film transistor (TFT) (TFT) medium or low resistance anti-gate (gate) metallic film and drain electrode (drain), source electrode (source) electrode film, can be applicable to the continuous printing process of large tracts of land and make flat-panel screens, is a rare invention in fact.
Only the above only is a preferable possible embodiments of the present invention, and non-so promptly inflexible limit claim of the present invention so the equivalent structure that uses instructions of the present invention and icon content to do such as changes, all in like manner is contained in the scope of the present invention, closes and gives Chen Ming.
Claims (3)
1. film crystal tube printing mfg method is to utilize mode of printing to prepare electrode in the thin film transistor (TFT), and this method step includes:
Defining a print pattern, is to comprise SnCl with one
2Or the seed crystal material of the complex ion of silver defines this print pattern on a printing module;
Prepare a substrate and this printing module that defines pattern;
Carry out the surface treatment of this substrate;
Print this seed crystal material on this substrate;
Soak and put this substrate and comprise in the metal ion solution in one, this solution is to contain the solution that reductive agent, stabilization agent mix with metallic ion;
Reducing metal ion, and the metal material of deposition reduction;
Form metal wiring, be to use copperas solution will on this substrate, not wish the part removal of metal deposition, promptly form this metal wiring in this seed crystal material position.
2. film crystal tube printing mfg method as claimed in claim 1, wherein this step of carrying out the substrate surface processing is to utilize the pollution for the solution removal metallic ion that 1:1:6 was made into of aqua ammonia, Liquor Hydrogen Peroxide and water ratio in this substrate surface, and reaching with hydrogen chloride, Liquor Hydrogen Peroxide and water ratio is the organic pollution of solution removal that 1:1:5 was made into.
3. film crystal tube printing mfg method as claimed in claim 1 is a plane printing module or a roller type printing module in this printing module wherein.
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|---|---|---|---|
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| CN1786800A CN1786800A (en) | 2006-06-14 |
| CN100470340C true CN100470340C (en) | 2009-03-18 |
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| TWI480999B (en) * | 2012-07-16 | 2015-04-11 | J Touch Corp | Compound induction electrode structure applied to a touch panel |
| US8907920B2 (en) | 2012-08-13 | 2014-12-09 | J Touch Corporation | Complex sensing electrode structure applied to a touch panel |
| CN103395307B (en) * | 2013-07-29 | 2015-09-09 | 电子科技大学 | A kind of preparation method of internal electrode of chip-type electronic component |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329226B1 (en) * | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
| US6413790B1 (en) * | 1999-07-21 | 2002-07-02 | E Ink Corporation | Preferred methods for producing electrical circuit elements used to control an electronic display |
| JP4093926B2 (en) * | 2002-06-20 | 2008-06-04 | 株式会社リコー | Optical recording medium |
-
2004
- 2004-12-06 CN CNB2004100969168A patent/CN100470340C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413790B1 (en) * | 1999-07-21 | 2002-07-02 | E Ink Corporation | Preferred methods for producing electrical circuit elements used to control an electronic display |
| US6329226B1 (en) * | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
| JP4093926B2 (en) * | 2002-06-20 | 2008-06-04 | 株式会社リコー | Optical recording medium |
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| CN1786800A (en) | 2006-06-14 |
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