CA2317759A1 - A field-effect transistor - Google Patents

A field-effect transistor Download PDF

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Publication number
CA2317759A1
CA2317759A1 CA002317759A CA2317759A CA2317759A1 CA 2317759 A1 CA2317759 A1 CA 2317759A1 CA 002317759 A CA002317759 A CA 002317759A CA 2317759 A CA2317759 A CA 2317759A CA 2317759 A1 CA2317759 A1 CA 2317759A1
Authority
CA
Canada
Prior art keywords
effect transistor
field
electrode
semiconductor material
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002317759A
Other languages
French (fr)
Other versions
CA2317759C (en
Inventor
Rolf Magnus Berggren
Bengt Goran Gustafsson
Johan Roger Axel Karlsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ensurge Micropower ASA
Original Assignee
Thin Film Electronics Asa
Rolf Magnus Berggren
Bengt Goran Gustafsson
Johan Roger Axel Karlsson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO980224A external-priority patent/NO306528B1/en
Application filed by Thin Film Electronics Asa, Rolf Magnus Berggren, Bengt Goran Gustafsson, Johan Roger Axel Karlsson filed Critical Thin Film Electronics Asa
Publication of CA2317759A1 publication Critical patent/CA2317759A1/en
Application granted granted Critical
Publication of CA2317759C publication Critical patent/CA2317759C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66916—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN heterojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]

Abstract

A field-effect transistor is made with electrodes (2, 4, 5) and isolators (3) in vertically provided layers, such that at least the electrodes (4, 5) and the isolators (3) form a step (6) oriented vertically relative to the first electrode (2) or the substrate (1). Implemented as a junction field-effect transistor (JFET) or a metal-oxide semiconducting field-effect transistor (MOSFET) the electrodes (2, 5) forming respectively the drain and source electrode of the field-effect transistor or vice versa and the electrode (4) the gate electrode of the field-effect transistor.
Over the layers in the vertical step (6) an amorphous, polycrystalline or microcrystalline inorganic or organic semiconductor material is provided and forms the active semiconductor of the transistor contacting the gate electrode (8) directly or indirectly and forming a vertically oriented transistor channel (9) of the p or n type between the first (2) and the second (5) electrode. In a method for fabrication of a field effect transistor a vertical step (6) is formed by a means of a photolithographic process and a soluble amorphous active semiconductor material (8) is deposited over the first electrode (2) and the vertical step (6) such that a vertically oriented transistor channel between the drain and source electrode (2, 5) is obtained. In a JFET the semiconductor material (8) contacts the gate electrode (4) directly. In a MOSFET a vertically oriented gate isolator (7) is provided between the gate electrode (4) and the semiconductor material (8).
CA002317759A 1998-01-16 1999-01-14 A field-effect transistor Expired - Fee Related CA2317759C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
NO980224A NO306528B1 (en) 1998-01-16 1998-01-16 Field Effect Transistor
NO980224 1998-01-16
NO985472A NO306529B1 (en) 1998-01-16 1998-11-23 Transistor
NO985472 1998-11-23
PCT/NO1999/000013 WO1999040631A1 (en) 1998-01-16 1999-01-14 A field-effect transistor

Publications (2)

Publication Number Publication Date
CA2317759A1 true CA2317759A1 (en) 1999-08-12
CA2317759C CA2317759C (en) 2004-06-22

Family

ID=26648813

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002317759A Expired - Fee Related CA2317759C (en) 1998-01-16 1999-01-14 A field-effect transistor

Country Status (14)

Country Link
US (1) US6429457B1 (en)
EP (1) EP1051754B1 (en)
JP (1) JP3495703B2 (en)
KR (1) KR100368818B1 (en)
CN (1) CN1210808C (en)
AT (1) ATE222027T1 (en)
AU (1) AU732134C (en)
CA (1) CA2317759C (en)
DE (1) DE69902441T2 (en)
DK (1) DK1051754T3 (en)
ES (1) ES2179619T3 (en)
NO (1) NO306529B1 (en)
RU (1) RU2189665C2 (en)
WO (1) WO1999040631A1 (en)

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US6855977B2 (en) * 2001-05-07 2005-02-15 Advanced Micro Devices, Inc. Memory device with a self-assembled polymer film and method of making the same
WO2002091496A2 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
JP4841751B2 (en) * 2001-06-01 2011-12-21 株式会社半導体エネルギー研究所 Organic semiconductor device and manufacturing method thereof
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
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JP4247377B2 (en) * 2001-12-28 2009-04-02 独立行政法人産業技術総合研究所 Thin film transistor and manufacturing method thereof
KR100433407B1 (en) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 Upright-type vacuum cleaner
US6885146B2 (en) * 2002-03-14 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates
EP1367659B1 (en) * 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
KR100417461B1 (en) * 2002-07-12 2004-02-05 주식회사 하이닉스반도체 Method of manufacturing a semiconductor device
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
CN100364108C (en) * 2002-08-28 2008-01-23 中国科学院长春应用化学研究所 Sandwith FET containing organic semiconductor and its preparing process
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Also Published As

Publication number Publication date
ES2179619T3 (en) 2003-01-16
ATE222027T1 (en) 2002-08-15
KR20010034186A (en) 2001-04-25
EP1051754A1 (en) 2000-11-15
DK1051754T3 (en) 2002-09-02
NO985472L (en) 1999-07-19
NO985472D0 (en) 1998-11-23
AU732134C (en) 2001-11-22
US6429457B1 (en) 2002-08-06
DE69902441D1 (en) 2002-09-12
CN1210808C (en) 2005-07-13
DE69902441T2 (en) 2003-04-17
WO1999040631A1 (en) 1999-08-12
CA2317759C (en) 2004-06-22
JP3495703B2 (en) 2004-02-09
NO306529B1 (en) 1999-11-15
AU732134B2 (en) 2001-04-12
EP1051754B1 (en) 2002-08-07
JP2002503035A (en) 2002-01-29
KR100368818B1 (en) 2003-01-24
RU2189665C2 (en) 2002-09-20
AU2552099A (en) 1999-08-23
CN1293825A (en) 2001-05-02

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