CA2242743A1 - Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging - Google Patents
Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging Download PDFInfo
- Publication number
- CA2242743A1 CA2242743A1 CA002242743A CA2242743A CA2242743A1 CA 2242743 A1 CA2242743 A1 CA 2242743A1 CA 002242743 A CA002242743 A CA 002242743A CA 2242743 A CA2242743 A CA 2242743A CA 2242743 A1 CA2242743 A1 CA 2242743A1
- Authority
- CA
- Canada
- Prior art keywords
- high voltage
- voltage protection
- static
- ray detector
- direct conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 238000003384 imaging method Methods 0.000 title abstract 2
- 230000003068 static effect Effects 0.000 title abstract 2
- 239000011159 matrix material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14659—Direct radiation imagers structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
Abstract
A direct conversion digital x-ray detector is provided with inherent high voltage protection for static and dynamic imaging. The detector has an n-channel active matrix TFT array, a coplanar photoconductor structure and a high voltage biasing electrode. In order to achieve high voltage protection, the biasing electrode is set to a negative potential and the TFT "off" gate voltage is set to a predetermined negative value, such that the TFT
is essentially non-conductive.
is essentially non-conductive.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002242743A CA2242743C (en) | 1998-07-08 | 1998-07-08 | Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging |
EP99304714A EP0971244B1 (en) | 1998-07-08 | 1999-06-16 | Direct conversion digital X-ray detector with inherent high voltage protection for static and dynamic imaging |
DE69941442T DE69941442D1 (en) | 1998-07-08 | 1999-06-16 | Digital X-ray detector for dynamic or static imaging with immediate conversion and inherent high voltage protection |
US09/342,256 US6353229B1 (en) | 1998-07-08 | 1999-06-29 | Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging |
JP19343899A JP3440031B2 (en) | 1998-07-08 | 1999-07-07 | Direct conversion digital X-ray or gamma ray detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002242743A CA2242743C (en) | 1998-07-08 | 1998-07-08 | Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2242743A1 true CA2242743A1 (en) | 2000-01-08 |
CA2242743C CA2242743C (en) | 2002-12-17 |
Family
ID=4162635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002242743A Expired - Lifetime CA2242743C (en) | 1998-07-08 | 1998-07-08 | Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging |
Country Status (5)
Country | Link |
---|---|
US (1) | US6353229B1 (en) |
EP (1) | EP0971244B1 (en) |
JP (1) | JP3440031B2 (en) |
CA (1) | CA2242743C (en) |
DE (1) | DE69941442D1 (en) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000068710A2 (en) | 1999-05-10 | 2000-11-16 | Lippens Francois | Energy-selective x-ray radiation detection system |
JP2001284628A (en) * | 2000-03-29 | 2001-10-12 | Shindengen Electric Mfg Co Ltd | X-ray detector |
US6717151B2 (en) * | 2000-07-10 | 2004-04-06 | Canon Kabushiki Kaisha | Image pickup apparatus |
JP4280024B2 (en) * | 2001-04-23 | 2009-06-17 | 株式会社東芝 | X-ray flat panel detector |
CN1316634C (en) * | 2001-10-03 | 2007-05-16 | 株式会社东芝 | X-ray plane detector |
JP4723789B2 (en) * | 2001-10-03 | 2011-07-13 | 株式会社東芝 | X-ray flat panel detector |
CA2363663C (en) * | 2001-11-22 | 2004-10-19 | Ftni Inc. | Direct conversion flat panel x-ray detector with automatic cancellation of ghost images |
JP3696176B2 (en) * | 2002-05-14 | 2005-09-14 | 株式会社東芝 | Imaging device |
JP2007527987A (en) * | 2003-04-24 | 2007-10-04 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | X-ray detector element |
US6969896B1 (en) * | 2003-08-12 | 2005-11-29 | Varian Medical Systems Technologies, Inc. | Photodetector biasing scheme |
US20050056829A1 (en) * | 2003-09-17 | 2005-03-17 | Green Michael C. | Reducing dark current of photoconductor using heterojunction that maintains high x-ray sensitivity |
JP4890271B2 (en) * | 2004-02-11 | 2012-03-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Radiation detection apparatus and X-ray inspection apparatus having photogate, and dose monitoring method and X-ray inspection method |
KR101090253B1 (en) * | 2004-10-06 | 2011-12-06 | 삼성전자주식회사 | Thin film transistor array panel and liquid crystal display including the same |
US7304308B2 (en) * | 2005-02-16 | 2007-12-04 | Hologic, Inc. | Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging |
US7122803B2 (en) * | 2005-02-16 | 2006-10-17 | Hologic, Inc. | Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging |
US7233005B2 (en) * | 2005-02-16 | 2007-06-19 | Hologic, Inc. | Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging |
JP4653579B2 (en) * | 2005-07-13 | 2011-03-16 | 株式会社東芝 | X-ray flat panel detector |
JP5317388B2 (en) * | 2005-09-30 | 2013-10-16 | キヤノン株式会社 | Radiation imaging apparatus, radiation imaging system, and program |
WO2008017416A2 (en) * | 2006-08-07 | 2008-02-14 | Eth Zurich | Multitransducer array and method for configuring such a device |
US9741901B2 (en) * | 2006-11-07 | 2017-08-22 | Cbrite Inc. | Two-terminal electronic devices and their methods of fabrication |
US8232531B2 (en) * | 2007-03-29 | 2012-07-31 | Varian Medical Systems, Inc. | Corrosion barrier layer for photoconductive X-ray imagers |
JP4560101B2 (en) * | 2008-03-31 | 2010-10-13 | 株式会社日立製作所 | Radiation measuring device and nuclear medicine diagnostic device |
JP2010011158A (en) * | 2008-06-27 | 2010-01-14 | Fujifilm Corp | Detection element |
JP5996019B2 (en) * | 2011-05-31 | 2016-09-21 | キヤノン株式会社 | Detection device manufacturing method, detection device and detection system |
JP5999921B2 (en) * | 2012-02-24 | 2016-09-28 | ソニーセミコンダクタソリューションズ株式会社 | Imaging apparatus and imaging display system |
KR102004987B1 (en) * | 2012-12-11 | 2019-07-29 | 삼성전자주식회사 | Photon counting detector and Readout circuit |
JP6247918B2 (en) * | 2013-12-09 | 2017-12-13 | 浜松ホトニクス株式会社 | Radiation image sensor |
KR20160088125A (en) | 2015-01-15 | 2016-07-25 | 삼성전자주식회사 | Radiation detector and radiation photographing apparatus including the same |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5273910A (en) * | 1990-08-08 | 1993-12-28 | Minnesota Mining And Manufacturing Company | Method of making a solid state electromagnetic radiation detector |
US5198673A (en) * | 1992-01-23 | 1993-03-30 | General Electric Company | Radiation image detector with optical gain selenium photosensors |
DE4227096A1 (en) | 1992-08-17 | 1994-02-24 | Philips Patentverwaltung | X-ray image detector |
JPH08509550A (en) * | 1993-04-28 | 1996-10-08 | ユニバーシティ オブ サリー | Radiation detector |
US5436101A (en) * | 1993-08-20 | 1995-07-25 | Xerox Corporation | Negative charging selenium photoreceptor |
GB9414639D0 (en) | 1994-07-20 | 1994-09-07 | Philips Electronics Uk Ltd | An image detector |
WO1996022616A1 (en) | 1995-01-19 | 1996-07-25 | Litton Systems (Canada) Limited | Flat panel imaging device |
US5528043A (en) | 1995-04-21 | 1996-06-18 | Thermotrex Corporation | X-ray image sensor |
US5892222A (en) * | 1996-04-18 | 1999-04-06 | Loral Fairchild Corporation | Broadband multicolor photon counter for low light detection and imaging |
JPH10170658A (en) * | 1996-12-06 | 1998-06-26 | Toshiba Corp | X-ray image pick-up device |
JP3683987B2 (en) * | 1996-06-21 | 2005-08-17 | 株式会社東芝 | X-ray flat panel detector |
CA2184667C (en) | 1996-09-03 | 2000-06-20 | Bradley Trent Polischuk | Multilayer plate for x-ray imaging and method of producing same |
CA2241779C (en) * | 1998-06-26 | 2010-02-09 | Ftni Inc. | Indirect x-ray image detector for radiology |
JP4066531B2 (en) * | 1998-08-27 | 2008-03-26 | 株式会社島津製作所 | Radiation detector |
-
1998
- 1998-07-08 CA CA002242743A patent/CA2242743C/en not_active Expired - Lifetime
-
1999
- 1999-06-16 EP EP99304714A patent/EP0971244B1/en not_active Expired - Lifetime
- 1999-06-16 DE DE69941442T patent/DE69941442D1/en not_active Expired - Lifetime
- 1999-06-29 US US09/342,256 patent/US6353229B1/en not_active Expired - Lifetime
- 1999-07-07 JP JP19343899A patent/JP3440031B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2000058804A (en) | 2000-02-25 |
CA2242743C (en) | 2002-12-17 |
DE69941442D1 (en) | 2009-11-05 |
EP0971244A2 (en) | 2000-01-12 |
JP3440031B2 (en) | 2003-08-25 |
EP0971244B1 (en) | 2009-09-23 |
EP0971244A3 (en) | 2001-04-18 |
US6353229B1 (en) | 2002-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request |