CA2169442A1 - Surface emitting laser device with a vertical cavity - Google Patents
Surface emitting laser device with a vertical cavityInfo
- Publication number
- CA2169442A1 CA2169442A1 CA002169442A CA2169442A CA2169442A1 CA 2169442 A1 CA2169442 A1 CA 2169442A1 CA 002169442 A CA002169442 A CA 002169442A CA 2169442 A CA2169442 A CA 2169442A CA 2169442 A1 CA2169442 A1 CA 2169442A1
- Authority
- CA
- Canada
- Prior art keywords
- active regions
- anyone
- optical
- layers
- bragg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/163—Single longitudinal mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Abstract
The present invention relates to a surface emitting laser device with at least two active regions in one and the same optical, vertical cavity wherein the active regions are electrically connected in series.
Description
_ WO95/07566 PCT/SE94/00803 Title:
SURFACE EMITTING LASER DEVICE WITH A VERTICAL CAVITY
TECHNICAL FIELD
The present invention relates to a surface emitting laser device with at least two active regions in one and the same optical cavity, the cavity being vertical and vertically substantially surrounded by dielectrical reflecting means. Such devices may find their application within a number of different fields, such as for example optical communication systems etc. It is general for so called surface emitting vertical cavity-lasers (Surface Emitting Vertical Cavity Lasers) that the losses in electrical power due to resistance in the optical reflectors give rise to difficulties when such devices are to be fabricated in practice.
In most applications with diode lasers it is tried to obtain a threshold current, i.e. the lowest electrical feeding current for which lasering occurs, which is as low as possible. This is very hard to achieve. Normally diode lasers also have a very low electrical input impedance and therefore the construction of broad-band feeding circuits while still maintAin;ng a high efficiency isvery difficult.
STATE OF THE ART
A number of different laser devices with two or more active regions are known, e.g. so called strip-lasers. Moreover, these devices have several active regions in order to provide a higher power, furthermore such lasers are not surface emitting. A so called large optical cavity laser is known e.g. from US-A-4 602 370. This device 2 ~ ~q44~ --has a number of active layers in the optical cavity. These active layers are however not electrically connected in series and the optical losses will be high. They arise since the contact layers are located in regions which have an electrical field strength as high as that of the active layer.
In "Integrated Multilayer GaAs Lasers Separated by Tunnel Junctions" of J P van der Ziel and W T Tsang, Appl Phys Lett 41(6), 15 September 1982, three so called double-hetero-structure GaAs-laser diodes are electrically connected in series through reversedtunnel junctions. This device does however not describe a surface emitting laser device and it also does not form a vertical optical cavity since it does not comprise any dielectric reflecting devices. Since the active layers in such a device are arranged at a comparatively large distance from each other, which as such is necessary in this case, the optical output signals from the different lasers will be incoherent since the lasers are not connected to each other.
General for all vertical surface emitting lasers, i.e. lasers with a vertical cavity, is that the electrical reflector losses, i.e.
due to resistance in the reflectors, are very important and it is extremely difficult to obtain an impedance which is sufficiently high across the active region. This is very problematical since a high impedance across the active region can be a great advantage in a number of applications.
The reflectors in such devices have essentially two different functions, namely, on one hand two really act as reflectors or mirrors which put requirements on the material such that it has to have good optical properties, among others low optical losses etc.
and on the other hand that they should conduct current to the next active region. The last function requires good conductive properties of the device, preferably the should be highly doped and ~ woss/o7566 PCT/SE94/00803 2 1 69~42 have a low resistance. The requirements romi~g from the different functions are conflicting and ;ncQmratible which in turn leads to solutions in the form of compromises which leads to large voltage drops in the reflectors.
In the copen~;ng swedish patent application filed at the same time by the same applicant "Laser device with laser structures connected in series in an optical cavity" a laser device is described which comprises at least two in one and the same optical cavity arranged laser structures which are electrically connected in series. The laser structures are in this case substantially parallelly arranged in relation to each other.
Furthermore is in another copending, also at the same time by the same applicant filed swedish patent application, "Optical amplifying device" an amplifying device described which uses laser structures or active regions which are electrically connected in series for example in a vertical cavity.
Normally so called diode lasers comprise one or sometimes more active regions electrically connected in parallel. Then each electron that is injected into the active region generates one photon. See Fig 1 which illustrates a normal, conventional laser with the feeding current 4I.
SUMMARY OF THE INVENTION
It is an object with the present invention to provide a surface emitting laser device as initially referred to through which the resistive, electrical losses which are introduced through the dielectrical reflecting devices are reduced, i.e. the voltage drop across the reflectors. The invention then among others seeks to reduce the relative importance of the electrical reflector losses.
Another object of the invention is to reduce the threshold current ~16q442 for a given power. It is also an object with the invention to be able to increase the electrical fe~;ng imp~Anc~ and at the same time lower the threshold current. It is also a general ob;ect with the invention to be able to adapt the impe~ncP upwards. Another object with the invention is to provide a device which gives a good and even better amplification without the voltage drop across the reflectors increasing. A further object with the invention is to provide a device which is quite simple and easy to fabricate as well as it is easy to use and which has a great field of applicability, i.e. that it is applicable in a number of different areas, for example within optical transmission technology, optical interconnection technology, for example between two semi-conductor-chips ("Optical Interconnect"), etc.
Those as well as other objects are achieved through a device as initially referred to wherein the active regions are electrically connected in series.
According to an advantageous embodiment the active regions as well as between those arranged contact regions or layers are parallel with the standing wave planes or wave fronts produced by the optical field, i.e. perpendicular to the direction of propagation of the waves. Particularly the active regions are arranged in horizontal planes corresponding to maximum electric-optical field and the electrical contact regions or the contact layers are arranged in horizontal planes correspon~;ng to m;n; ~ in the optical electrical field. The electrical reflection devices comprise particularly first and second dielectrical Bragg devices.
Among those dielectrical Bragg devices the first one is arranged on the top where it substantially delimits the vertical cavity and it is also somewhat transparent. The other Bragg device is arranged at the bottom and according to an advantageous embodiment r~;m~lly reflecting. The first and second Bragg devices are surrounded by upper and lower contact layers respectively wherein the upper ~ W095/07566 PCT/SE94/00803 -- 216944~
contact layer is substantially transparent. According to a particular embodiment the laser device comprises four active regions or layers. According to a particular embodiment may furthermore the active regions or layers have a so called quantum well structure. Furthermore the electrical contact layers or the layers may particularly be of tunnel-diode-type with thin, highly doped layers. The device particularly forms a laser device and emits laser light. According to an alternative embodiment the device emits light of LED-character, i.e. when the currents are lower than the threshold current.
BRIEF DESCRIPTION OF THE DRAWINGS
The invention will in the following be further described in a non-limiting way under reference to the accompanying drawings wherein, Fig 2 schematically illustrates a vertical cavity laser of the surface emitting kind, Fig 2a illustrates an active region according to Fig 2, Fig 2b illustrates a contact region or a contact layer according to Fig 2, Fig 3 illustrates a device according to the invention with a curve illustrating the optical intensity, Fig 4 schematically illustrates an example of a device according to the invention.
2 1 6q442 DETAILED DESCRIPTION OF THE INVENTION
In Fig 2 a device lO is illustrated wherein an optical, verticalcavity is formed by a first and a second dielectric Bragg reflection device la, lb. The first Bragg reflection device la is arranged in the upper part of the vertical device and it is advantageously somewhat transparent. On top of this first reflecting device an upper contact layer 2a is arranged. In the shown embodiment this is translucent or transparent. Still further, in the illustrated emboA;mpnt the lower Bragg reflection device lb is as reflective as possible and under this a lower contact layer 2b is arranged. Between the two Bragg reflection devices la, lb four active regions or layers 3a, 3b, 3c, 3d are arranged between which contact regions or contact layers 4a, 4b, 4c are arranged.
The active regions or the layers 3a, 3b, 3c, 3d are more clearly illustrated in Fig 2a. In this case the active region is slightly n-doped (n~). Other alternatives are of course also possible, for example it could be slightly p-doped (p~), but this constitutes a technic which as such is known per se. The active regions or the layers 3a, 3b, 3c, 3d may according to a particular embodiment form a quantum well structure. The contact regions or the contact layers 4a, 4b, 4c are more clearly illustrated in Fig lb. The contact layers 4a, 4b, 4c may according to a particular embodiment be of the kind of tunnel diodes with thin highly doped layers which can be seen from the figure. In the illustrated embodiment is shown how the light is emitted. This can be in form of laser light or of LED-character, i.e. corresponding to a case as if it is above or below the threshold current level. In Fig 3 the device according to Fig 2 is illustrated with a curve illustrating the optical intensity and it can be seen that each contact layer or contact region 4a, 4b, 4c is located in a plane corresponding to a minimum r in optical intensity Iopt whereas each active region 3a, 3b, 3c, 3d is located in a region corresponding to a maximum in optical intensity Iopt. An optical standing wave pattern is for example ~ WO9S/07566 PCT/SE94/00803 2 1 6q44;~
introduced through an electrical f~;ng signal I1n, i.e. when I
Px~ the threshold current an optical standing wave pattern is formed with four (four since according to the embodiment there are four active regions) intensity peaks. The stAn~;ng wave pattern declines in the Bragg reflection devices la, lb. The optical losses are reduced since a maximum only occurs precisely in the active region. With four active regions 3a, 3b, 3c, 3d four voltage drops of for example each 1 V is obt~;ne~. (1 V of course merely gives an example for an illustrative purpose). This would give a total voltage drop of 4 V. With four active regions 3a, 3b, 3c, 3d the amplification will be higher without the voltage drop across the reflectors getting any larger, which voltage drop actually is a parasitic voltage drop (c.f. Fig l). In the illustrated embodiment light is emitted upwards (Fig 2). According to alternative embodiments this could of course be upwards as well as downwards or in both directions (Fig 3) in which cases the device is adapted thereto. Through the invention the relative significance of the reflection losses is reduced at the same time as it gets possible to reduce the current for a given power, i.e. the impedance is increased. Then the adaption to cables which normally for example have an impP~nce of 50 ohm is simplified on even enabled. It has up to now been very difficult to fabricate transmission cables which deviate considerably from 50 ohm, c.f. coaxial cables and ~-strip-cables respectively. Through the invention it will be possible to vary (increase) the impedance across the active regions, for example with a factor of 16 of the same time as the threshold current is lowered with about, for a given power, a factor 4. (Of course these factors are merely given for illustrative purposes, corresponding to four active regions.
According to the invention the useful voltage drop, i.e. the voltage drop across the active regions (corresponding to the power which is converted to optical power) gets four times greater when the device comprises four active regions, in a generalized manner 2~ 6~442 ~
n times greater if the device has n active regions, compare the case as illustrated in Fig 1. Furthermore n (in the shown embo~;m~nt n=4) gives rise to a higher amplification why a smaller reflectivity in the reflectors can be accepted since the requirements thereon decrease, they can be made thinner etc.
In Fig 4 an example of a device according to the invention is illustrated which has a cylindrical cross section. According to one embodiment the first Bragg reflection device may have a thickness of about 2-10 ~m and the second Bragg reflection device may have a thickness of about 3-10 ~m. With four regions electrically connected in series forming a complete active region 3A those might according to the shown embodiment for example have a thickness of 0,75 ~m. The diameter D of the cylindrical device may for example be about 4 ~m. Of course this merely gives an example and there are of course a great number of other possibilities.
Examples on materials are GaAlAs (particularly for shorter wave lengths such as ~=0,8 ~) and InGaAsP for longer wave lengths (for example ~=1,3-1,6 ~). Of course a number of other materials can also be used.
The invention is of course not limited to the shown embodiments but it can be varied in a number of ways within the scope of the claims. Even if one embodiment with four active layers or regions has been illustrated, it is of course possible to have fewer as well as more active regions. Furthermore the active layers and the electrical contact regions may be of a conventional character, the reflection devices can take many different forms etc.
SURFACE EMITTING LASER DEVICE WITH A VERTICAL CAVITY
TECHNICAL FIELD
The present invention relates to a surface emitting laser device with at least two active regions in one and the same optical cavity, the cavity being vertical and vertically substantially surrounded by dielectrical reflecting means. Such devices may find their application within a number of different fields, such as for example optical communication systems etc. It is general for so called surface emitting vertical cavity-lasers (Surface Emitting Vertical Cavity Lasers) that the losses in electrical power due to resistance in the optical reflectors give rise to difficulties when such devices are to be fabricated in practice.
In most applications with diode lasers it is tried to obtain a threshold current, i.e. the lowest electrical feeding current for which lasering occurs, which is as low as possible. This is very hard to achieve. Normally diode lasers also have a very low electrical input impedance and therefore the construction of broad-band feeding circuits while still maintAin;ng a high efficiency isvery difficult.
STATE OF THE ART
A number of different laser devices with two or more active regions are known, e.g. so called strip-lasers. Moreover, these devices have several active regions in order to provide a higher power, furthermore such lasers are not surface emitting. A so called large optical cavity laser is known e.g. from US-A-4 602 370. This device 2 ~ ~q44~ --has a number of active layers in the optical cavity. These active layers are however not electrically connected in series and the optical losses will be high. They arise since the contact layers are located in regions which have an electrical field strength as high as that of the active layer.
In "Integrated Multilayer GaAs Lasers Separated by Tunnel Junctions" of J P van der Ziel and W T Tsang, Appl Phys Lett 41(6), 15 September 1982, three so called double-hetero-structure GaAs-laser diodes are electrically connected in series through reversedtunnel junctions. This device does however not describe a surface emitting laser device and it also does not form a vertical optical cavity since it does not comprise any dielectric reflecting devices. Since the active layers in such a device are arranged at a comparatively large distance from each other, which as such is necessary in this case, the optical output signals from the different lasers will be incoherent since the lasers are not connected to each other.
General for all vertical surface emitting lasers, i.e. lasers with a vertical cavity, is that the electrical reflector losses, i.e.
due to resistance in the reflectors, are very important and it is extremely difficult to obtain an impedance which is sufficiently high across the active region. This is very problematical since a high impedance across the active region can be a great advantage in a number of applications.
The reflectors in such devices have essentially two different functions, namely, on one hand two really act as reflectors or mirrors which put requirements on the material such that it has to have good optical properties, among others low optical losses etc.
and on the other hand that they should conduct current to the next active region. The last function requires good conductive properties of the device, preferably the should be highly doped and ~ woss/o7566 PCT/SE94/00803 2 1 69~42 have a low resistance. The requirements romi~g from the different functions are conflicting and ;ncQmratible which in turn leads to solutions in the form of compromises which leads to large voltage drops in the reflectors.
In the copen~;ng swedish patent application filed at the same time by the same applicant "Laser device with laser structures connected in series in an optical cavity" a laser device is described which comprises at least two in one and the same optical cavity arranged laser structures which are electrically connected in series. The laser structures are in this case substantially parallelly arranged in relation to each other.
Furthermore is in another copending, also at the same time by the same applicant filed swedish patent application, "Optical amplifying device" an amplifying device described which uses laser structures or active regions which are electrically connected in series for example in a vertical cavity.
Normally so called diode lasers comprise one or sometimes more active regions electrically connected in parallel. Then each electron that is injected into the active region generates one photon. See Fig 1 which illustrates a normal, conventional laser with the feeding current 4I.
SUMMARY OF THE INVENTION
It is an object with the present invention to provide a surface emitting laser device as initially referred to through which the resistive, electrical losses which are introduced through the dielectrical reflecting devices are reduced, i.e. the voltage drop across the reflectors. The invention then among others seeks to reduce the relative importance of the electrical reflector losses.
Another object of the invention is to reduce the threshold current ~16q442 for a given power. It is also an object with the invention to be able to increase the electrical fe~;ng imp~Anc~ and at the same time lower the threshold current. It is also a general ob;ect with the invention to be able to adapt the impe~ncP upwards. Another object with the invention is to provide a device which gives a good and even better amplification without the voltage drop across the reflectors increasing. A further object with the invention is to provide a device which is quite simple and easy to fabricate as well as it is easy to use and which has a great field of applicability, i.e. that it is applicable in a number of different areas, for example within optical transmission technology, optical interconnection technology, for example between two semi-conductor-chips ("Optical Interconnect"), etc.
Those as well as other objects are achieved through a device as initially referred to wherein the active regions are electrically connected in series.
According to an advantageous embodiment the active regions as well as between those arranged contact regions or layers are parallel with the standing wave planes or wave fronts produced by the optical field, i.e. perpendicular to the direction of propagation of the waves. Particularly the active regions are arranged in horizontal planes corresponding to maximum electric-optical field and the electrical contact regions or the contact layers are arranged in horizontal planes correspon~;ng to m;n; ~ in the optical electrical field. The electrical reflection devices comprise particularly first and second dielectrical Bragg devices.
Among those dielectrical Bragg devices the first one is arranged on the top where it substantially delimits the vertical cavity and it is also somewhat transparent. The other Bragg device is arranged at the bottom and according to an advantageous embodiment r~;m~lly reflecting. The first and second Bragg devices are surrounded by upper and lower contact layers respectively wherein the upper ~ W095/07566 PCT/SE94/00803 -- 216944~
contact layer is substantially transparent. According to a particular embodiment the laser device comprises four active regions or layers. According to a particular embodiment may furthermore the active regions or layers have a so called quantum well structure. Furthermore the electrical contact layers or the layers may particularly be of tunnel-diode-type with thin, highly doped layers. The device particularly forms a laser device and emits laser light. According to an alternative embodiment the device emits light of LED-character, i.e. when the currents are lower than the threshold current.
BRIEF DESCRIPTION OF THE DRAWINGS
The invention will in the following be further described in a non-limiting way under reference to the accompanying drawings wherein, Fig 2 schematically illustrates a vertical cavity laser of the surface emitting kind, Fig 2a illustrates an active region according to Fig 2, Fig 2b illustrates a contact region or a contact layer according to Fig 2, Fig 3 illustrates a device according to the invention with a curve illustrating the optical intensity, Fig 4 schematically illustrates an example of a device according to the invention.
2 1 6q442 DETAILED DESCRIPTION OF THE INVENTION
In Fig 2 a device lO is illustrated wherein an optical, verticalcavity is formed by a first and a second dielectric Bragg reflection device la, lb. The first Bragg reflection device la is arranged in the upper part of the vertical device and it is advantageously somewhat transparent. On top of this first reflecting device an upper contact layer 2a is arranged. In the shown embodiment this is translucent or transparent. Still further, in the illustrated emboA;mpnt the lower Bragg reflection device lb is as reflective as possible and under this a lower contact layer 2b is arranged. Between the two Bragg reflection devices la, lb four active regions or layers 3a, 3b, 3c, 3d are arranged between which contact regions or contact layers 4a, 4b, 4c are arranged.
The active regions or the layers 3a, 3b, 3c, 3d are more clearly illustrated in Fig 2a. In this case the active region is slightly n-doped (n~). Other alternatives are of course also possible, for example it could be slightly p-doped (p~), but this constitutes a technic which as such is known per se. The active regions or the layers 3a, 3b, 3c, 3d may according to a particular embodiment form a quantum well structure. The contact regions or the contact layers 4a, 4b, 4c are more clearly illustrated in Fig lb. The contact layers 4a, 4b, 4c may according to a particular embodiment be of the kind of tunnel diodes with thin highly doped layers which can be seen from the figure. In the illustrated embodiment is shown how the light is emitted. This can be in form of laser light or of LED-character, i.e. corresponding to a case as if it is above or below the threshold current level. In Fig 3 the device according to Fig 2 is illustrated with a curve illustrating the optical intensity and it can be seen that each contact layer or contact region 4a, 4b, 4c is located in a plane corresponding to a minimum r in optical intensity Iopt whereas each active region 3a, 3b, 3c, 3d is located in a region corresponding to a maximum in optical intensity Iopt. An optical standing wave pattern is for example ~ WO9S/07566 PCT/SE94/00803 2 1 6q44;~
introduced through an electrical f~;ng signal I1n, i.e. when I
Px~ the threshold current an optical standing wave pattern is formed with four (four since according to the embodiment there are four active regions) intensity peaks. The stAn~;ng wave pattern declines in the Bragg reflection devices la, lb. The optical losses are reduced since a maximum only occurs precisely in the active region. With four active regions 3a, 3b, 3c, 3d four voltage drops of for example each 1 V is obt~;ne~. (1 V of course merely gives an example for an illustrative purpose). This would give a total voltage drop of 4 V. With four active regions 3a, 3b, 3c, 3d the amplification will be higher without the voltage drop across the reflectors getting any larger, which voltage drop actually is a parasitic voltage drop (c.f. Fig l). In the illustrated embodiment light is emitted upwards (Fig 2). According to alternative embodiments this could of course be upwards as well as downwards or in both directions (Fig 3) in which cases the device is adapted thereto. Through the invention the relative significance of the reflection losses is reduced at the same time as it gets possible to reduce the current for a given power, i.e. the impedance is increased. Then the adaption to cables which normally for example have an impP~nce of 50 ohm is simplified on even enabled. It has up to now been very difficult to fabricate transmission cables which deviate considerably from 50 ohm, c.f. coaxial cables and ~-strip-cables respectively. Through the invention it will be possible to vary (increase) the impedance across the active regions, for example with a factor of 16 of the same time as the threshold current is lowered with about, for a given power, a factor 4. (Of course these factors are merely given for illustrative purposes, corresponding to four active regions.
According to the invention the useful voltage drop, i.e. the voltage drop across the active regions (corresponding to the power which is converted to optical power) gets four times greater when the device comprises four active regions, in a generalized manner 2~ 6~442 ~
n times greater if the device has n active regions, compare the case as illustrated in Fig 1. Furthermore n (in the shown embo~;m~nt n=4) gives rise to a higher amplification why a smaller reflectivity in the reflectors can be accepted since the requirements thereon decrease, they can be made thinner etc.
In Fig 4 an example of a device according to the invention is illustrated which has a cylindrical cross section. According to one embodiment the first Bragg reflection device may have a thickness of about 2-10 ~m and the second Bragg reflection device may have a thickness of about 3-10 ~m. With four regions electrically connected in series forming a complete active region 3A those might according to the shown embodiment for example have a thickness of 0,75 ~m. The diameter D of the cylindrical device may for example be about 4 ~m. Of course this merely gives an example and there are of course a great number of other possibilities.
Examples on materials are GaAlAs (particularly for shorter wave lengths such as ~=0,8 ~) and InGaAsP for longer wave lengths (for example ~=1,3-1,6 ~). Of course a number of other materials can also be used.
The invention is of course not limited to the shown embodiments but it can be varied in a number of ways within the scope of the claims. Even if one embodiment with four active layers or regions has been illustrated, it is of course possible to have fewer as well as more active regions. Furthermore the active layers and the electrical contact regions may be of a conventional character, the reflection devices can take many different forms etc.
Claims (18)
1. Surface emitting laser device (10; 20) with at least two active regions (3a, 3b, 3c, 3d, ...) in one and the same optical cavity, wherein the optical cavity is vertical and vertically substantially confined by or limited by two dielectrical reflecting devices (1a, 1b; 1a', 1b'), c h a r a c t e r i z e d in, that in the active regions (3a, 3b, 3c, 3d) are electrically connected in series.
2. Device according to claim 1, c h a r a c t e r i z e d in, that it is so formed that a vertical optical standing wave pattern is created in the optical cavity.
3. Device according to claim 2, c h a r a c t e r i z e d in, that the laser device is pumped electrically through a current (I) which flows vertically through the laser device via an upper and a lower contact.
4. Device according to claim 3, c h a r a c t e r i z e d in, that the electrical contact regions (4a, 4b, 4c) are arranged between the active regions (3a, 3b, 3c, 3d).
5. Device according to claim 4, c h a r a c t e r i z e d in, that the active regions (3a, 3b, 3c, 3d) and the contact regions (4a, 4b, 4c) are perpendicular to the direction of propagation of the standing waves.
6. Device according to claim 2, c h a r a c t e r i z e d in, that the active regions (3a, 3b, 3c, 3d) are arranged in horizontal planes corresponding to maximum electro-optical field strength.
7. Device according to claim 6, c h a r a c t e r i z e d in, that said electrical contact regions (4a, 4b, 4c) are arranged in horizontal planes corresponding to minimum in the optical electrical field.
8. Device according to anyone of the preceding claims, c h a r a c t e r i z e d in, that the dielectrical reflection devices (1a, 1b; 1a' 1b') comprises first and second dielectric Bragg devices.
9. Device (10; 20) according to claim 8, c h a r a c t e r i z e d in, that the first Bragg device (1a; 1a') is arranged in the upper part and in that it is somewhat transparent.
10. Device (20) according to claim 9, c h a r a c t e r i z e d in, that the first as well as the second Bragg device (1a', 1b') are somewhat transparent.
11. Device (10) according to claim 8 or 9, c h a r a c t e r i z e d in, that the second Bragg device (1b) is arranged at the lower part and that it is maximally reflecting.
12. Device according to claim 8, c h a r a c t e r i z e d in, that the first and the second Bragg devices (1a, 1b; 1a', 1b') respectively are surrounded by upper and lower contact layers respectively whereupon at least the upper contact layer (2a;
2a') is substantially transparent.
2a') is substantially transparent.
13. Device according to anyone of claims 1-7, c h a r a c t e r i z e d in, that it comprises four active layers (3a, 3b, 3c, 3d).
14. Device according to anyone of claims 1-7, c h a r a c t e r i z e d in, that the active regions or layers (3a, 3b, 3c, 3d) have the structure of quantum wells.
15. Device according to anyone of claims 1-7, c h a r a c t e r i z e d in, that the electrical contact layers (4a, 4b, 4c) are of the type of tunnel-diodes with thin, highly doped layers.
16. Device according to anyone of preceding claims, c h a r a c t e r i z e d in, that it forms a diode laser device.
17. Device (10; 20) according to anyone of the preceding claims, c h a r a c t e r i z e d in, that it emits laser light.
18. Device (10; 20) according to anyone of claims 1-15, c h a r a c t e r i z e d in, that it emits light of LED-kind.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9302950-2 | 1993-09-10 | ||
| SE9302950A SE501722C2 (en) | 1993-09-10 | 1993-09-10 | Surface emitting laser device with vertical cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2169442A1 true CA2169442A1 (en) | 1995-03-16 |
Family
ID=20391056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002169442A Abandoned CA2169442A1 (en) | 1993-09-10 | 1994-09-01 | Surface emitting laser device with a vertical cavity |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5781575A (en) |
| EP (1) | EP0717883B1 (en) |
| JP (1) | JPH09502571A (en) |
| CA (1) | CA2169442A1 (en) |
| DE (1) | DE69407603T2 (en) |
| SE (1) | SE501722C2 (en) |
| WO (1) | WO1995007566A1 (en) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6243407B1 (en) | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
| FR2761537B1 (en) * | 1997-04-01 | 1999-06-11 | Thomson Csf | LASER COMPRISING A STACK OF EPITAXIAL LASER DIODES INCLUDED BETWEEN TWO BRAGG MIRRORS |
| EP1051783B1 (en) * | 1998-01-30 | 2002-01-09 | Osram Opto Semiconductors GmbH & Co. OHG | Semiconductor laser chip |
| DE19954093A1 (en) * | 1999-11-10 | 2001-05-23 | Infineon Technologies Ag | Arrangement for high power lasers |
| US6816525B2 (en) | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
| US6905900B1 (en) * | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
| US7065124B2 (en) * | 2000-11-28 | 2006-06-20 | Finlsar Corporation | Electron affinity engineered VCSELs |
| WO2002071562A2 (en) * | 2001-03-02 | 2002-09-12 | Science & Technology Corporation @ Unm | Quantum dot vertical cavity surface emitting laser |
| DE10147353C2 (en) * | 2001-09-26 | 2003-12-18 | Infineon Technologies Ag | Semiconductor laser with at least two optically active areas |
| US6965626B2 (en) * | 2002-09-03 | 2005-11-15 | Finisar Corporation | Single mode VCSEL |
| DE10251824A1 (en) * | 2002-11-01 | 2004-05-19 | Technische Universität Dresden | Vertical cavity surface emitting laser for producing coherent radiation in far infrared spectral range, generates electronic wave packet which is driven by laser field of heterostructure to emit coherent radiation |
| US6813293B2 (en) * | 2002-11-21 | 2004-11-02 | Finisar Corporation | Long wavelength VCSEL with tunnel junction, and implant |
| US20040222363A1 (en) * | 2003-05-07 | 2004-11-11 | Honeywell International Inc. | Connectorized optical component misalignment detection system |
| US20040247250A1 (en) * | 2003-06-03 | 2004-12-09 | Honeywell International Inc. | Integrated sleeve pluggable package |
| US7298942B2 (en) | 2003-06-06 | 2007-11-20 | Finisar Corporation | Pluggable optical optic system having a lens fiber stop |
| US7433381B2 (en) | 2003-06-25 | 2008-10-07 | Finisar Corporation | InP based long wavelength VCSEL |
| US7054345B2 (en) | 2003-06-27 | 2006-05-30 | Finisar Corporation | Enhanced lateral oxidation |
| US7277461B2 (en) * | 2003-06-27 | 2007-10-02 | Finisar Corporation | Dielectric VCSEL gain guide |
| US7075962B2 (en) * | 2003-06-27 | 2006-07-11 | Finisar Corporation | VCSEL having thermal management |
| US20060056762A1 (en) * | 2003-07-02 | 2006-03-16 | Honeywell International Inc. | Lens optical coupler |
| US7210857B2 (en) * | 2003-07-16 | 2007-05-01 | Finisar Corporation | Optical coupling system |
| US20050013542A1 (en) * | 2003-07-16 | 2005-01-20 | Honeywell International Inc. | Coupler having reduction of reflections to light source |
| US20050013539A1 (en) * | 2003-07-17 | 2005-01-20 | Honeywell International Inc. | Optical coupling system |
| US6887801B2 (en) * | 2003-07-18 | 2005-05-03 | Finisar Corporation | Edge bead control method and apparatus |
| US7282732B2 (en) * | 2003-10-24 | 2007-10-16 | Stc. Unm | Quantum dot structures |
| US7031363B2 (en) * | 2003-10-29 | 2006-04-18 | Finisar Corporation | Long wavelength VCSEL device processing |
| US20070130153A1 (en) * | 2005-12-02 | 2007-06-07 | Palm, Inc. | Techniques to communicate and process location information from communications networks on a mobile computing device |
| DE102006010728A1 (en) * | 2005-12-05 | 2007-06-06 | Osram Opto Semiconductors Gmbh | Semiconductor component and laser device |
| US20170256915A1 (en) * | 2016-03-04 | 2017-09-07 | Princeton Optronics, Inc. | High-Speed VCSEL Device |
| US20210194216A1 (en) * | 2019-12-24 | 2021-06-24 | Array Photonics, Inc. | Stacked semiconductor lasers with controlled spectral emission |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4316156A (en) * | 1979-07-12 | 1982-02-16 | Xerox Corporation | Optical repeater integrated lasers |
| JPS59104189A (en) * | 1982-12-07 | 1984-06-15 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser |
| US4602370A (en) * | 1983-05-12 | 1986-07-22 | At&T Bell Laboratories | Large optical cavity laser having a plurality of active layers |
| US4719630A (en) * | 1986-03-24 | 1988-01-12 | Xerox Corporation | Phased array semiconductor lasers with uniform and stable supermode |
| US4817103A (en) * | 1986-10-06 | 1989-03-28 | University Of Illinois | Semiconductor light emitting device with stacked active regions |
| JPS6395682A (en) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | End-surface light-emitting device |
| DE8806828U1 (en) * | 1988-05-25 | 1988-09-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen, De | |
| JPH02144983A (en) * | 1988-11-25 | 1990-06-04 | Agency Of Ind Science & Technol | Semiconductor laser device with a plurality of active layers |
| US4916712A (en) * | 1989-07-27 | 1990-04-10 | Mcdonnell Douglas Corporation | Optically pumped slab laser |
| JPH03124067A (en) * | 1989-10-07 | 1991-05-27 | Showa Shell Sekiyu Kk | Photovoltaic device and its manufacture |
| US5115442A (en) * | 1990-04-13 | 1992-05-19 | At&T Bell Laboratories | Top-emitting surface emitting laser structures |
| US5052016A (en) * | 1990-05-18 | 1991-09-24 | University Of New Mexico | Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser |
| US5181219A (en) * | 1990-09-12 | 1993-01-19 | Seiko Epson Corporation | Surface emission type semiconductor laser |
| US5212706A (en) * | 1991-12-03 | 1993-05-18 | University Of Connecticut | Laser diode assembly with tunnel junctions and providing multiple beams |
-
1993
- 1993-09-10 SE SE9302950A patent/SE501722C2/en not_active IP Right Cessation
-
1994
- 1994-09-01 JP JP7508625A patent/JPH09502571A/en active Pending
- 1994-09-01 WO PCT/SE1994/000803 patent/WO1995007566A1/en active IP Right Grant
- 1994-09-01 CA CA002169442A patent/CA2169442A1/en not_active Abandoned
- 1994-09-01 DE DE69407603T patent/DE69407603T2/en not_active Expired - Lifetime
- 1994-09-01 EP EP94926435A patent/EP0717883B1/en not_active Expired - Lifetime
-
1997
- 1997-01-02 US US08/775,886 patent/US5781575A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5781575A (en) | 1998-07-14 |
| SE9302950D0 (en) | 1993-09-10 |
| DE69407603T2 (en) | 1998-04-09 |
| EP0717883A1 (en) | 1996-06-26 |
| WO1995007566A1 (en) | 1995-03-16 |
| EP0717883B1 (en) | 1997-12-29 |
| SE9302950L (en) | 1995-03-11 |
| JPH09502571A (en) | 1997-03-11 |
| DE69407603D1 (en) | 1998-02-05 |
| SE501722C2 (en) | 1995-05-02 |
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| FZDE | Discontinued | ||
| FZDE | Discontinued |
Effective date: 20020903 |