CA2033137A1 - Microwave component and method for fabricating substrate for use in microwave component - Google Patents

Microwave component and method for fabricating substrate for use in microwave component

Info

Publication number
CA2033137A1
CA2033137A1 CA2033137A CA2033137A CA2033137A1 CA 2033137 A1 CA2033137 A1 CA 2033137A1 CA 2033137 A CA2033137 A CA 2033137A CA 2033137 A CA2033137 A CA 2033137A CA 2033137 A1 CA2033137 A1 CA 2033137A1
Authority
CA
Canada
Prior art keywords
microwave component
pair
conductor layers
dielectric layer
fabricating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2033137A
Other languages
French (fr)
Other versions
CA2033137C (en
Inventor
Kenjiro Higaki
Saburo Tanaka
Shuji Yazu
Hideo Itozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1334032A external-priority patent/JPH03194979A/en
Priority claimed from JP2000876A external-priority patent/JPH03205904A/en
Priority claimed from JP2306733A external-priority patent/JPH04178004A/en
Application filed by Individual filed Critical Individual
Publication of CA2033137A1 publication Critical patent/CA2033137A1/en
Application granted granted Critical
Publication of CA2033137C publication Critical patent/CA2033137C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0408—Processes for depositing or forming superconductor layers by sputtering

Abstract

A microwave component includes a single dielectric layer, and one pair of conductor layers formed on opposite surfaces of the dielectric layer, respectively, one of the pair of conductor layers forming a ground conductor, and the other of the pair of conductor layers being shaped in a predetermined pattern. The pair of conductor layers are respectively formed of oxide superconductor material layers which are deposited on the opposite surfaces of the dielectric layer, respectively, and which have little defect.
CA002033137A 1989-12-22 1990-12-24 Microwave component and method for fabricating substrate for use in microwave component Expired - Fee Related CA2033137C (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP334032/1989 1989-12-22
JP1334032A JPH03194979A (en) 1989-12-22 1989-12-22 Microwave resonator
JP2000876A JPH03205904A (en) 1990-01-06 1990-01-06 Microwave delay line
JP876/1990 1990-01-06
JP2306733A JPH04178004A (en) 1990-11-13 1990-11-13 Manufacture of board for superconducting microwave component
JP306733/1990 1990-11-13

Publications (2)

Publication Number Publication Date
CA2033137A1 true CA2033137A1 (en) 1991-06-23
CA2033137C CA2033137C (en) 1995-07-18

Family

ID=27274653

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002033137A Expired - Fee Related CA2033137C (en) 1989-12-22 1990-12-24 Microwave component and method for fabricating substrate for use in microwave component

Country Status (5)

Country Link
US (1) US6057271A (en)
EP (1) EP0435765B1 (en)
AU (1) AU625016B2 (en)
CA (1) CA2033137C (en)
DE (1) DE69030365T2 (en)

Families Citing this family (50)

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US7231238B2 (en) * 1989-01-13 2007-06-12 Superconductor Technologies, Inc. High temperature spiral snake superconducting resonator having wider runs with higher current density
US6026311A (en) * 1993-05-28 2000-02-15 Superconductor Technologies, Inc. High temperature superconducting structures and methods for high Q, reduced intermodulation resonators and filters
CA2043545C (en) * 1990-05-30 1997-03-04 Saburo Tanaka Process for preparing superconducting junction of oxide superconductor
DE69131793T2 (en) * 1990-08-08 2000-04-27 Sumitomo Electric Industries Substrate for superconducting devices
JP2567517B2 (en) * 1990-10-29 1996-12-25 住友電気工業株式会社 Superconducting microwave components
US5439877A (en) * 1990-12-07 1995-08-08 E. I. Du Pont De Nemours And Company Process for depositing high temperature superconducting oxide thin films
WO1992010857A1 (en) * 1990-12-07 1992-06-25 E.I. Du Pont De Nemours And Company Process for depositing high temperature superconducting oxide thin films
US5150088A (en) * 1991-03-27 1992-09-22 Hughes Aircraft Company Stripline shielding techniques in low temperature co-fired ceramic
JPH04342487A (en) * 1991-05-20 1992-11-27 Sumitomo Electric Ind Ltd Production of substrate for superconducting microwave part
EP0584410A1 (en) * 1991-07-05 1994-03-02 Conductus, Inc. Superconducting electronic structures and methods of preparing same
CA2073272C (en) * 1991-07-08 1997-04-01 Kenjiro Higaki Microwave resonator of compound oxide superconductor material
US6156707A (en) * 1992-05-20 2000-12-05 Sumitomo Electric Industries, Ltd. Method of manufacturing superconducting microwave component substrate
US6021337A (en) * 1996-05-29 2000-02-01 Illinois Superconductor Corporation Stripline resonator using high-temperature superconductor components
US7554829B2 (en) 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US6844203B2 (en) * 2001-08-30 2005-01-18 Micron Technology, Inc. Gate oxides, and methods of forming
US6953730B2 (en) 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6893984B2 (en) * 2002-02-20 2005-05-17 Micron Technology Inc. Evaporated LaA1O3 films for gate dielectrics
US6812100B2 (en) * 2002-03-13 2004-11-02 Micron Technology, Inc. Evaporation of Y-Si-O films for medium-k dielectrics
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US20030222732A1 (en) * 2002-05-29 2003-12-04 Superconductor Technologies, Inc. Narrow-band filters with zig-zag hairpin resonator
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7205218B2 (en) * 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
US7193893B2 (en) * 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
US6804136B2 (en) 2002-06-21 2004-10-12 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US7221017B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6921702B2 (en) 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6790791B2 (en) * 2002-08-15 2004-09-14 Micron Technology, Inc. Lanthanide doped TiOx dielectric films
US6884739B2 (en) 2002-08-15 2005-04-26 Micron Technology Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6967154B2 (en) * 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US7199023B2 (en) 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
US7101813B2 (en) * 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US6958302B2 (en) 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
US20050233477A1 (en) * 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
WO2005093123A1 (en) * 2004-03-26 2005-10-06 Tohoku Seiki Industries, Ltd. Process for forming thin film and system for forming thin film
US7558608B2 (en) * 2004-09-29 2009-07-07 Fujitsu Limited Superconducting device, fabrication method thereof, and filter adjusting method
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US7759237B2 (en) * 2007-06-28 2010-07-20 Micron Technology, Inc. Method of forming lutetium and lanthanum dielectric structures
CN104157947A (en) * 2014-08-06 2014-11-19 武汉中元通信股份有限公司 Strip-shaped three-dimensional layout topology structure of V-waveband and high-power broadband 3dB quadrature coupler
JP7122367B2 (en) * 2017-08-03 2022-08-19 エーエスエムエル ネザーランズ ビー．ブイ． Simultaneous double-sided coating of multi-layer graphene pellicle by localized heat treatment
CN113312783B (en) * 2021-06-09 2022-07-01 广东电网有限责任公司 Modeling method and system for superconducting direct current cable

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962086A (en) * 1988-06-08 1990-10-09 International Business Machines Corporation High Tc superconductor - gallate crystal structures
US4962316A (en) * 1989-07-31 1990-10-09 Santa Barbara Research Center Frequency domain integrating resonant superconducting transmission line detector

Also Published As

Publication number Publication date
DE69030365T2 (en) 1997-10-23
DE69030365D1 (en) 1997-05-07
AU625016B2 (en) 1992-06-25
AU6845390A (en) 1991-06-27
EP0435765A3 (en) 1991-09-18
US6057271A (en) 2000-05-02
EP0435765A2 (en) 1991-07-03
CA2033137C (en) 1995-07-18
EP0435765B1 (en) 1997-04-02

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