CA1222050A - Memory system - Google Patents
Memory systemInfo
- Publication number
- CA1222050A CA1222050A CA000455996A CA455996A CA1222050A CA 1222050 A CA1222050 A CA 1222050A CA 000455996 A CA000455996 A CA 000455996A CA 455996 A CA455996 A CA 455996A CA 1222050 A CA1222050 A CA 1222050A
- Authority
- CA
- Canada
- Prior art keywords
- memory
- memory device
- refresh
- battery
- external device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/141—Battery and back-up supplies
Abstract
Abstract:
A semiconductor memory including a dynamic memory device has a battery for supplying a voltage source for power and a substrate bias voltage when the memory is cut off from an external supply. A refresh control circuit changes the refresh timing of the memory device in accordance with the leakage current of the memory device. The power consumption of the memory can thus be reduced and the data kept for an extended period without an external source of power.
A semiconductor memory including a dynamic memory device has a battery for supplying a voltage source for power and a substrate bias voltage when the memory is cut off from an external supply. A refresh control circuit changes the refresh timing of the memory device in accordance with the leakage current of the memory device. The power consumption of the memory can thus be reduced and the data kept for an extended period without an external source of power.
Description
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Memory syste_ This in~ention relates to a memory device using a dynamic semiconductor memory.
A Eloppy disk is one of the conventional memory devices, but is insufficiently reliable because it has a bulky mechanical portion. Moreover, it is not highly portable.
Great hopes are therefore placed on semiconductor technology to develop electronic memory devices for filing data. Since semiconductor memories are volatile (they lose the data stored therein when the power source is cut off), their application to data storage requiring a non-~olatility memory is difficult.
Among semiconductor memories the dynamic memory type, in particular, has a power consumption that is incomparably greater than that of a static memory, and cannot be maintained by using a ba~tery back-up. Counter-measures for temporary breakdown of an external power source have been proposed in Japanese Patent Laid-Open No. 153,580/1981, for example.
This prior art shows a dynamic memory module with a refresh circuit besides that of the CPU module. The memory can be refreshed by the refresh circuit of the CPU module so long as an AC power source is applied, and by the refresh circuit of the memory module if the power source is cut off, thereby permitting the memory module to operate by itself.
This construction eliminates the need for a back-up battery to supply power to both the CPU and memory modules, and the power ~onsumption can be reduced because the power need be supplied only to the memory module.
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However, there is a need for further drastic reduction in the power consumption of dynamic memories, especially for those applications where the device may be cut off from an external power source for an extended period.
The present invention is directed towards providing a semiconductor memory system suitable for use as a file memory device by reducing the power consumption required by a volatile semiconductor memory, especially a dynamic memory, to enable the data to be maintained for a long period using a battery.
To accomplish this object the present invention reduces the power consumption during a refresh period of a dynamic memory by so constituting the refresh control circuit as to control the refresh timing in accordance with the potential of a ~`ata memory capacitor forming part of the memory cell.
In a preferred embodiment of the present invention, a substrate bias voltage of a semiconductor substrate is supplied by a substrate bias voltage generation circuit so long as the power is supplied from an external power source, and is supplied by a battery once the power from the external power source is cut off, thus eliminating the power consumption of the substrate bias voltage generation circuit during a battery back-up period.
In the accompanying drawings:
Figure 1 is a circuit diagram of a conventional sub-strate bias voltage generation circuit;
Figure 2 is a diagram showing the temperature characteristics of the refresh time of a memory cell;
Figure 3A is a perspective view of a semiconductor memory in accordance with one embodiment of this invention;
Figure 3B is a sectional view of the device shown in Figure 3A, taken on the line A-A';
Figure 4 is a circuit diagram of the memory shown in Figure 3A;
Flgure 5A is a fundamental circuit diagram of a refresh timer used in the device of Figure 4;
Figure 5B i5 a sectional view of a memory cell potential ~zzos~
generation portion of the refresh timer shown in Figure SA;
Figure 5C is a waveform diagram of the refresh timer shown in Figure 5A;
Figure 6 is a circuit diagram showing another example of the refresh timer shown in Figure 4;
Figure 7 is a waveform diagram of the refresh timer shown in Figure 6;
Figure 8 is a schematic view of another embodiment of the present invention;
Figure 9 is a sectional view of the device of Figure 8 when packaged practically;
Figure 10 is a schematic view of still another embodiment of the present invention;
Figure 11 is a sectional view of a battery used in the device shown in Figure 10; and Figure 12 is a schematic view of still another embodiment of the present invention.
The following are required to reduce the power consumption of a memory system as a whole, e.g., below 1 mW, to such an extent that even a small battery can supply the power for a long period (e.g., for more than one month):
~1) a refresh timer whose oscillation frequency becomes higher with increasing temperature;
Memory syste_ This in~ention relates to a memory device using a dynamic semiconductor memory.
A Eloppy disk is one of the conventional memory devices, but is insufficiently reliable because it has a bulky mechanical portion. Moreover, it is not highly portable.
Great hopes are therefore placed on semiconductor technology to develop electronic memory devices for filing data. Since semiconductor memories are volatile (they lose the data stored therein when the power source is cut off), their application to data storage requiring a non-~olatility memory is difficult.
Among semiconductor memories the dynamic memory type, in particular, has a power consumption that is incomparably greater than that of a static memory, and cannot be maintained by using a ba~tery back-up. Counter-measures for temporary breakdown of an external power source have been proposed in Japanese Patent Laid-Open No. 153,580/1981, for example.
This prior art shows a dynamic memory module with a refresh circuit besides that of the CPU module. The memory can be refreshed by the refresh circuit of the CPU module so long as an AC power source is applied, and by the refresh circuit of the memory module if the power source is cut off, thereby permitting the memory module to operate by itself.
This construction eliminates the need for a back-up battery to supply power to both the CPU and memory modules, and the power ~onsumption can be reduced because the power need be supplied only to the memory module.
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However, there is a need for further drastic reduction in the power consumption of dynamic memories, especially for those applications where the device may be cut off from an external power source for an extended period.
The present invention is directed towards providing a semiconductor memory system suitable for use as a file memory device by reducing the power consumption required by a volatile semiconductor memory, especially a dynamic memory, to enable the data to be maintained for a long period using a battery.
To accomplish this object the present invention reduces the power consumption during a refresh period of a dynamic memory by so constituting the refresh control circuit as to control the refresh timing in accordance with the potential of a ~`ata memory capacitor forming part of the memory cell.
In a preferred embodiment of the present invention, a substrate bias voltage of a semiconductor substrate is supplied by a substrate bias voltage generation circuit so long as the power is supplied from an external power source, and is supplied by a battery once the power from the external power source is cut off, thus eliminating the power consumption of the substrate bias voltage generation circuit during a battery back-up period.
In the accompanying drawings:
Figure 1 is a circuit diagram of a conventional sub-strate bias voltage generation circuit;
Figure 2 is a diagram showing the temperature characteristics of the refresh time of a memory cell;
Figure 3A is a perspective view of a semiconductor memory in accordance with one embodiment of this invention;
Figure 3B is a sectional view of the device shown in Figure 3A, taken on the line A-A';
Figure 4 is a circuit diagram of the memory shown in Figure 3A;
Flgure 5A is a fundamental circuit diagram of a refresh timer used in the device of Figure 4;
Figure 5B i5 a sectional view of a memory cell potential ~zzos~
generation portion of the refresh timer shown in Figure SA;
Figure 5C is a waveform diagram of the refresh timer shown in Figure 5A;
Figure 6 is a circuit diagram showing another example of the refresh timer shown in Figure 4;
Figure 7 is a waveform diagram of the refresh timer shown in Figure 6;
Figure 8 is a schematic view of another embodiment of the present invention;
Figure 9 is a sectional view of the device of Figure 8 when packaged practically;
Figure 10 is a schematic view of still another embodiment of the present invention;
Figure 11 is a sectional view of a battery used in the device shown in Figure 10; and Figure 12 is a schematic view of still another embodiment of the present invention.
The following are required to reduce the power consumption of a memory system as a whole, e.g., below 1 mW, to such an extent that even a small battery can supply the power for a long period (e.g., for more than one month):
~1) a refresh timer whose oscillation frequency becomes higher with increasing temperature;
(2) a battery supplying a substrate bias voltage to a memory device; and
(3) a dynamic memory device employing CMOS technology.
The table below illustrates the power consumption required for a data holding operation for one chip of a conventional dynamic memory.
Table _ ~ower con- ~ Kemarks ~-~ sumption _ .. _~_ _ _ _ When holding AC component 5 mW Power source 5 V
the data DC component 20 mW refresh time 2 m 64K-bit dynamic memory ~;2 22~SI~
Thus, one chip consumes 25 mW power. It is virtually impossible to supply so much power from a battery for a long period.
However, the power consumption can be reduced as foll~ws.
(1) Of the DC power, 12.5 mW can be reduced sub-stantially to zero byuse of CMOS technology.
(2) The remaining 7.5 mW of the DC power can be drastically reduced by supplying the substrate bias volta~e from the battery.
Conventionally, this 7.5 mW of power is supplied by a substrate bias voltage generation circuit. As shown in Figure 1, this circuit consists of an oscillator 131 and a charge pump circuit 132, for example. The 7.5 mW of power is the mean charge-discharge power of a capacitor 133 inside the charge pump circuit. Accordingly, this power requirement cannot be reduced even when CMOS technology is employed. The efficiency is extremely low, in view of the fact that a current of an average of a few micro-amperes needs to be supplied to the substrate in practice.
If the substrate bias voltage is supplied by a battery when the power is no longer supplied from an external power source, or if it is supplied by a 3 V battery, for example, the power consumption of the battery may be only 3 ~W.
(3) The AC content of the data holding power, i.e.
5 mW, can be reduced by adjusting the frequency of the re-fresh operations in accordance with temperature.
This 5 mW of power depends upon the cycles of refresh operation needed to prevent data loss ~ue to leakage current from the memory cell.
The refresh cycle greatly depends upon the tem-perature of the memory chip. Figure 2 shows the temperature characteristics. As the temperature drops, the leakage current de&reases and the interval between refresh operations becomes longer. Generally, the refresh time of memories is Eixed at 2 ms. This time is chosen in consideration of ~2ZZ~S~ `
possible operation of a memory chip at a temperature ranging from 100 to 125C, on the basis of a maximum ambient tem-perature of 75~ and a temperature increment due to self-exothermy of from 30 to 50C.
As can be seen from Figure 2, however, the average frequency of the refresh operations can be reduced and the power can be reduced in proportion thereto, if the refresh time is extended when the temperature is low and shortened proportionally when the temperature becomes higher.
One embodiment of the present invention based upon the concept described above will now be described with reference to Figs. 3A and 3B.
A memory chip 24 is a CMOS chip, ha~ a l-transistor type memory cell and generates l-bit data in accordance with address and control signals.
A control chip 22 is a CMOS control chip that controls the address and control signals of the memory chip 24. Switches 1, 2 and 60 detect whether or not connection to an external device is established, and capacitors 31 and 38 are provided for stabilizing the power source. These circuit elements are mounted on a printed circuit board 11.
Components 14 throu~h 19, which constitute a battery, are dis-posed on the reverse side of the board 11 which is further equippped with connectors.
The battery components include three solid primary cells 17a through 17c. When the substrate of the memory chip 24 is of P type, the solid primary cell 17c supplies a sub-strate bias voltage to the memory chip 24 through a terminal 13d.
The positive and negative plates of the solid primary cells 17a and 17b are connected in series with one another through terminals 13c and 13b, respectively. The positive plates of these cells supply the positive power source for operating the device. The positive and negative plates of the cells 17c and 17b respectively are connected by a metal part 15 and supply the ground potential for the device.
Reference numeral 14 represents a ceramic seal, 18 is a metal 12~501 member (Ni, stainless steel, or the like), and 19 is a battery separator.
Normally, s~litch buttons 3, 4 and 61 project from switches 1, 2 and 60 respectively. When they are depressed, they are recessed in the devic~ and actuate contacts.
Connection o an external device is established through connectors 12. The write data and control signals are applied from the external device to the memory through these connectors 12, and the read data is sent from the memory to the external device.
A power source for normal operation is applied from the external device to the memory through the terminal 8.
The circuit of this device will now be described.
Figure 4 illustrates a semiconductor memory having eight 56K-bit memory chips 24. The capacity of this memory is therefore 256 Bytes.
In the drawing, reference numeral 24 again represents a memory chip, 25 is a data bus, 26 is a group of address and control lines, 1 and 2 are again switches, and 6 is a power source for the substrate bias voltage. During normal operation the address and control signals applied to the address buffer inside the control chip 22 are given to the eight memory chips, respectively, and each memory chip executes read and write of l-bit data.
A capacitor 38 is connected in parallel with the primary cell 17c, while a capacitor 31 is connected across the primary cells 17a and 17b, for stabilizing the po~er.
The refresh timer 32 produces a refresh start pulse VOUt. ~ refresh signal generation circuit 33 is started by the refresh timer 32, and produces refresh address signals and refresh control signals. The refresh timer 32 is started by MCLK signals applied from the external device through the switch 60, and its detail will be given elsewhere.
The refresh timer 32 and the refresh signal generation circuit 33 execute the refresh operation of the memory system at predetermined times to enable it to store and maintain the data, ~hether or not they are connected to the external device.
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As before, numeral 17c represent a battery for supplying the substrate voltage of the semiconductor memory, and its detail will be given elsewhere.
The refresh timer 32 produces the refresh start pulses V t at each predetermined time. The refresh signal generation circuit 33 memorizes which memor~ address should be refreshed. Upon receiving the refresh start pulse VOUt, the switch 35 cuts off the address signals and control signals from the external device (fed through buffer 38'), but transmits the refresh address ssgnals and refresh control signals from the refresh signal generation circuit 33 to the eight memory chips. The switch 35 transmits the address signals and control signals from the external device to the eight memory chips other than when refresh is executed. The refresh start pulse VOUt transmits to the external device a signal indicating that a refresh operation is being executed.
When the pulse VOUt is sent to the external de~ice, memory access to and from such device is temporarily inhibited while the refresh operation i5 being executed.
The cells 17a through 17c and the power supplied from the external device are changed over in the following manner.
Device operating power source When the device is connected to the external device ~not shown) the positive power is supplied to the memory chip 24 and the control chip 22 through the power terminal 8 in the connector 12. If the device is disconnected from the external device, the switch button 3 of the switch 1 returns to its original position and operating power is applied from the cells 17a, 17b to the memory chip 24 and the control chip 22.
If maintenance of the memorized data is not required, this switch 1 can be turned off to prevent consumption of the power in the cells. For example, the switch can be turned off during shipment from a factory until commencement of use b~ a custom~r. Furthermore, this switch can be used for simultaneously clearing all the contents of the memory chip 24.
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Memory substrate bias voltage When the printed circuit board 11 is connected to the external device, the power is supplied to the power terminal 8 and the substrate bias voltage generation circuit 6. The circuit 6 is shown in Figure 1. This circuit generates a negative voltage and applies the substrate bias voltage to the memory chip 24.
When the printed circuit board 11 is disconnected from the external device, the switch button 4 of the switch 2 returns to its original position, and the switch 2 changes the connection from the substrate bïas voltage generation circuit 6 to the power source 17c, so that the power source 17c supplies the substrate bias voltage to the memory chip 24.
Fi~ure 5~ shows the fundamental circuit of the refresh timer 32 of this embodiment. In this drawing numeral 52 represents a CMOS inverter that monitors the voltage change at a node NO due to a leakage current IL, and generates an output VOUt when such voltage reaches a certain threshold value. Numeral 51 represents a one-transistor type memory cell or a pseudo memory cell having an analogous structure.
Figure 5B illustrates the structure of such a pseudo memory cell. A transistor Tl is formed on a substrate 55 by a gate 64, diffused layers 62, 63 and a gate oxide film 67. A
capacitor C is formed by a gate oxide film 65, an electrode 68 and an inversion layer formed below the gate oxide film.
The capacitor C and the transistor Tl are directly connected to each other through the diffused layer 62. Numerals 69 and 70 represent silicon oxide films. This structure is the same as that of a one-transistor memory cell used for the memory chip 24.
The pseudo memory cell 51 is further equipped on the diffused layer 62 with a contact 66, so as to use the potential of the diffused layer 62 as the input of the inverter 52. A power source voltage is applied to the diffused layer 63.
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_ 9 In the same way as the memory cells of the memory chip 24, the pseudo memory cell 51 utilizes the charge that is stored in the inversion layer below the gate oxide film 65 and flows out as a leakage current IL to the substrate 55, in order to detect the loss of stored data in the memory cells of the memory chip 24.
Numberal 52 represents a CMOS inverter that monitors a potential change of the diffused layer 62 due to the leakage current IL and raises the potential of a node Nl to a high level when the change reaches a certain threshold value.
Numeral 53 represents a one-shot pulse generation circuit.
Figure 5C illustrates waveforms of the refresh timer 32 shown in Figure 5A. After an MSCL pulse has been applied from the external device, the refresh start pulse VOUt is thereafter generated automatically. The transistors 1'11, Tl are turned on by the MSCL pulse and the capacitor C is charged by the power source ~cc When the transistor Tl is thereater turned off, the capacitor C gradually discharges due to the lea~age current IL, and the potential at the node NO decreases.
When the voltage at the node NO becomes below the threshold value of the CMOS inverter 52, the potential at the node Nl hecomes high. The refresh start pulse VOUt becomes high through the one-shot pulse generation circuit 53, and, after the passage o~ a predetermined period, it becomes low. On the other hand, the transistor Tl is turned on by the pulse VOUt and the capacitor C is charged.
Incidentally, the threshold value of the CMOS
inverter is set to a value higher than the voltage at which re-write of the memory chip 24 is not possible, in order to prevent data loss from the memory chip 24.
This system can thus maintain the content of the memory even if there is no external power source and can hence possess non-volatility.
Although the refresh timer can in principle cover the full temperature range of the memory, the ambient tem-perature when the memory actually stores the data is typically from 10 to 40C and virtually no temperature rise due to ~2~205~
self-exothermy exists because the power consumption is greatly reduced. Accordingly, the refresh time can be extended much more than in the prior art, and hence the AC power can be reduce drastically, e.g. from 5 mW to 10 - 2~ ~W.
Aecordingly, the memory of this embodiment can reduce the data holding power from 25 mW/device of the prior art to 10 to 20 ~W/device, the total value for the system shown in Figure 4 being from 80 to 160 ~W. It therefore becomes possible to keep the data of a highly integrated dynamic memory by using a battery and to provide the memory with non volatility in the absence of an external power source.
Another embodiment of the present invention will now be described.
First, a modified example of the refresh timer will be explained with reference to Figure 6.
This circuit reduces the current by preventing a penetration current of the invertor 52 occurring when the output voltage of a leakage current source 51 is at an intermediate voltage (potential A in Figure 5c).
In the circuit shown in Figure 6, the timing i5 deviated by one-shot pulse generation circuits 54 and 55 in case the transistors T4 and T5 are simultaneously turned on.
The circuit operation will now be explained with reference to the waveform at each point shown in Figure 7.
After an MCLK pulse has been applied from the external device, this circuit automatically produces the refresh start pulses VOut. A switch 60 is located so as to connect the file memory to the MCLX pulse when the file memory is used in practice (CPU or the like) and to ground when the data are to be held. Grounding is effected to prevent mixture of noise when the memory is removed from the external device.
(1) When the MCLK pulse is applied, node N3 is raised to high level and turns on the transistor Tl, so that the capacitor M is charged.
(2~ As the charge stored in the capacitor M i5 reduced by the leakage current IL, the voltage drops gradually.
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When the voltage passes the threshold voltage of the tran-sistor Vthp, the transistor T4 is turned on, whereby node N4 drops to low level.
(3~ When the node N4 drops to low level, the out-put (at node N5) of the inverter (transistors T7, T8) risesto high level.
The table below illustrates the power consumption required for a data holding operation for one chip of a conventional dynamic memory.
Table _ ~ower con- ~ Kemarks ~-~ sumption _ .. _~_ _ _ _ When holding AC component 5 mW Power source 5 V
the data DC component 20 mW refresh time 2 m 64K-bit dynamic memory ~;2 22~SI~
Thus, one chip consumes 25 mW power. It is virtually impossible to supply so much power from a battery for a long period.
However, the power consumption can be reduced as foll~ws.
(1) Of the DC power, 12.5 mW can be reduced sub-stantially to zero byuse of CMOS technology.
(2) The remaining 7.5 mW of the DC power can be drastically reduced by supplying the substrate bias volta~e from the battery.
Conventionally, this 7.5 mW of power is supplied by a substrate bias voltage generation circuit. As shown in Figure 1, this circuit consists of an oscillator 131 and a charge pump circuit 132, for example. The 7.5 mW of power is the mean charge-discharge power of a capacitor 133 inside the charge pump circuit. Accordingly, this power requirement cannot be reduced even when CMOS technology is employed. The efficiency is extremely low, in view of the fact that a current of an average of a few micro-amperes needs to be supplied to the substrate in practice.
If the substrate bias voltage is supplied by a battery when the power is no longer supplied from an external power source, or if it is supplied by a 3 V battery, for example, the power consumption of the battery may be only 3 ~W.
(3) The AC content of the data holding power, i.e.
5 mW, can be reduced by adjusting the frequency of the re-fresh operations in accordance with temperature.
This 5 mW of power depends upon the cycles of refresh operation needed to prevent data loss ~ue to leakage current from the memory cell.
The refresh cycle greatly depends upon the tem-perature of the memory chip. Figure 2 shows the temperature characteristics. As the temperature drops, the leakage current de&reases and the interval between refresh operations becomes longer. Generally, the refresh time of memories is Eixed at 2 ms. This time is chosen in consideration of ~2ZZ~S~ `
possible operation of a memory chip at a temperature ranging from 100 to 125C, on the basis of a maximum ambient tem-perature of 75~ and a temperature increment due to self-exothermy of from 30 to 50C.
As can be seen from Figure 2, however, the average frequency of the refresh operations can be reduced and the power can be reduced in proportion thereto, if the refresh time is extended when the temperature is low and shortened proportionally when the temperature becomes higher.
One embodiment of the present invention based upon the concept described above will now be described with reference to Figs. 3A and 3B.
A memory chip 24 is a CMOS chip, ha~ a l-transistor type memory cell and generates l-bit data in accordance with address and control signals.
A control chip 22 is a CMOS control chip that controls the address and control signals of the memory chip 24. Switches 1, 2 and 60 detect whether or not connection to an external device is established, and capacitors 31 and 38 are provided for stabilizing the power source. These circuit elements are mounted on a printed circuit board 11.
Components 14 throu~h 19, which constitute a battery, are dis-posed on the reverse side of the board 11 which is further equippped with connectors.
The battery components include three solid primary cells 17a through 17c. When the substrate of the memory chip 24 is of P type, the solid primary cell 17c supplies a sub-strate bias voltage to the memory chip 24 through a terminal 13d.
The positive and negative plates of the solid primary cells 17a and 17b are connected in series with one another through terminals 13c and 13b, respectively. The positive plates of these cells supply the positive power source for operating the device. The positive and negative plates of the cells 17c and 17b respectively are connected by a metal part 15 and supply the ground potential for the device.
Reference numeral 14 represents a ceramic seal, 18 is a metal 12~501 member (Ni, stainless steel, or the like), and 19 is a battery separator.
Normally, s~litch buttons 3, 4 and 61 project from switches 1, 2 and 60 respectively. When they are depressed, they are recessed in the devic~ and actuate contacts.
Connection o an external device is established through connectors 12. The write data and control signals are applied from the external device to the memory through these connectors 12, and the read data is sent from the memory to the external device.
A power source for normal operation is applied from the external device to the memory through the terminal 8.
The circuit of this device will now be described.
Figure 4 illustrates a semiconductor memory having eight 56K-bit memory chips 24. The capacity of this memory is therefore 256 Bytes.
In the drawing, reference numeral 24 again represents a memory chip, 25 is a data bus, 26 is a group of address and control lines, 1 and 2 are again switches, and 6 is a power source for the substrate bias voltage. During normal operation the address and control signals applied to the address buffer inside the control chip 22 are given to the eight memory chips, respectively, and each memory chip executes read and write of l-bit data.
A capacitor 38 is connected in parallel with the primary cell 17c, while a capacitor 31 is connected across the primary cells 17a and 17b, for stabilizing the po~er.
The refresh timer 32 produces a refresh start pulse VOUt. ~ refresh signal generation circuit 33 is started by the refresh timer 32, and produces refresh address signals and refresh control signals. The refresh timer 32 is started by MCLK signals applied from the external device through the switch 60, and its detail will be given elsewhere.
The refresh timer 32 and the refresh signal generation circuit 33 execute the refresh operation of the memory system at predetermined times to enable it to store and maintain the data, ~hether or not they are connected to the external device.
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As before, numeral 17c represent a battery for supplying the substrate voltage of the semiconductor memory, and its detail will be given elsewhere.
The refresh timer 32 produces the refresh start pulses V t at each predetermined time. The refresh signal generation circuit 33 memorizes which memor~ address should be refreshed. Upon receiving the refresh start pulse VOUt, the switch 35 cuts off the address signals and control signals from the external device (fed through buffer 38'), but transmits the refresh address ssgnals and refresh control signals from the refresh signal generation circuit 33 to the eight memory chips. The switch 35 transmits the address signals and control signals from the external device to the eight memory chips other than when refresh is executed. The refresh start pulse VOUt transmits to the external device a signal indicating that a refresh operation is being executed.
When the pulse VOUt is sent to the external de~ice, memory access to and from such device is temporarily inhibited while the refresh operation i5 being executed.
The cells 17a through 17c and the power supplied from the external device are changed over in the following manner.
Device operating power source When the device is connected to the external device ~not shown) the positive power is supplied to the memory chip 24 and the control chip 22 through the power terminal 8 in the connector 12. If the device is disconnected from the external device, the switch button 3 of the switch 1 returns to its original position and operating power is applied from the cells 17a, 17b to the memory chip 24 and the control chip 22.
If maintenance of the memorized data is not required, this switch 1 can be turned off to prevent consumption of the power in the cells. For example, the switch can be turned off during shipment from a factory until commencement of use b~ a custom~r. Furthermore, this switch can be used for simultaneously clearing all the contents of the memory chip 24.
os~
Memory substrate bias voltage When the printed circuit board 11 is connected to the external device, the power is supplied to the power terminal 8 and the substrate bias voltage generation circuit 6. The circuit 6 is shown in Figure 1. This circuit generates a negative voltage and applies the substrate bias voltage to the memory chip 24.
When the printed circuit board 11 is disconnected from the external device, the switch button 4 of the switch 2 returns to its original position, and the switch 2 changes the connection from the substrate bïas voltage generation circuit 6 to the power source 17c, so that the power source 17c supplies the substrate bias voltage to the memory chip 24.
Fi~ure 5~ shows the fundamental circuit of the refresh timer 32 of this embodiment. In this drawing numeral 52 represents a CMOS inverter that monitors the voltage change at a node NO due to a leakage current IL, and generates an output VOUt when such voltage reaches a certain threshold value. Numeral 51 represents a one-transistor type memory cell or a pseudo memory cell having an analogous structure.
Figure 5B illustrates the structure of such a pseudo memory cell. A transistor Tl is formed on a substrate 55 by a gate 64, diffused layers 62, 63 and a gate oxide film 67. A
capacitor C is formed by a gate oxide film 65, an electrode 68 and an inversion layer formed below the gate oxide film.
The capacitor C and the transistor Tl are directly connected to each other through the diffused layer 62. Numerals 69 and 70 represent silicon oxide films. This structure is the same as that of a one-transistor memory cell used for the memory chip 24.
The pseudo memory cell 51 is further equipped on the diffused layer 62 with a contact 66, so as to use the potential of the diffused layer 62 as the input of the inverter 52. A power source voltage is applied to the diffused layer 63.
~;~22~5~
_ 9 In the same way as the memory cells of the memory chip 24, the pseudo memory cell 51 utilizes the charge that is stored in the inversion layer below the gate oxide film 65 and flows out as a leakage current IL to the substrate 55, in order to detect the loss of stored data in the memory cells of the memory chip 24.
Numberal 52 represents a CMOS inverter that monitors a potential change of the diffused layer 62 due to the leakage current IL and raises the potential of a node Nl to a high level when the change reaches a certain threshold value.
Numeral 53 represents a one-shot pulse generation circuit.
Figure 5C illustrates waveforms of the refresh timer 32 shown in Figure 5A. After an MSCL pulse has been applied from the external device, the refresh start pulse VOUt is thereafter generated automatically. The transistors 1'11, Tl are turned on by the MSCL pulse and the capacitor C is charged by the power source ~cc When the transistor Tl is thereater turned off, the capacitor C gradually discharges due to the lea~age current IL, and the potential at the node NO decreases.
When the voltage at the node NO becomes below the threshold value of the CMOS inverter 52, the potential at the node Nl hecomes high. The refresh start pulse VOUt becomes high through the one-shot pulse generation circuit 53, and, after the passage o~ a predetermined period, it becomes low. On the other hand, the transistor Tl is turned on by the pulse VOUt and the capacitor C is charged.
Incidentally, the threshold value of the CMOS
inverter is set to a value higher than the voltage at which re-write of the memory chip 24 is not possible, in order to prevent data loss from the memory chip 24.
This system can thus maintain the content of the memory even if there is no external power source and can hence possess non-volatility.
Although the refresh timer can in principle cover the full temperature range of the memory, the ambient tem-perature when the memory actually stores the data is typically from 10 to 40C and virtually no temperature rise due to ~2~205~
self-exothermy exists because the power consumption is greatly reduced. Accordingly, the refresh time can be extended much more than in the prior art, and hence the AC power can be reduce drastically, e.g. from 5 mW to 10 - 2~ ~W.
Aecordingly, the memory of this embodiment can reduce the data holding power from 25 mW/device of the prior art to 10 to 20 ~W/device, the total value for the system shown in Figure 4 being from 80 to 160 ~W. It therefore becomes possible to keep the data of a highly integrated dynamic memory by using a battery and to provide the memory with non volatility in the absence of an external power source.
Another embodiment of the present invention will now be described.
First, a modified example of the refresh timer will be explained with reference to Figure 6.
This circuit reduces the current by preventing a penetration current of the invertor 52 occurring when the output voltage of a leakage current source 51 is at an intermediate voltage (potential A in Figure 5c).
In the circuit shown in Figure 6, the timing i5 deviated by one-shot pulse generation circuits 54 and 55 in case the transistors T4 and T5 are simultaneously turned on.
The circuit operation will now be explained with reference to the waveform at each point shown in Figure 7.
After an MCLK pulse has been applied from the external device, this circuit automatically produces the refresh start pulses VOut. A switch 60 is located so as to connect the file memory to the MCLX pulse when the file memory is used in practice (CPU or the like) and to ground when the data are to be held. Grounding is effected to prevent mixture of noise when the memory is removed from the external device.
(1) When the MCLK pulse is applied, node N3 is raised to high level and turns on the transistor Tl, so that the capacitor M is charged.
(2~ As the charge stored in the capacitor M i5 reduced by the leakage current IL, the voltage drops gradually.
lZ2Z~S~:~
When the voltage passes the threshold voltage of the tran-sistor Vthp, the transistor T4 is turned on, whereby node N4 drops to low level.
(3~ When the node N4 drops to low level, the out-put (at node N5) of the inverter (transistors T7, T8) risesto high level.
(4) When the node 5 reaches high le~el, the tran-sistor T10 is turned on and the charge on the capacitor M is fully discharged, and the output (at node N6) of the one-shot pulse generation circuit 54 becomes high level.
(5) When the node N6 reaches high level, the node N3 rises to high level, because the transistor T12 is turned on, so that the capacitor M is charged and the transistor T4 is turned off. As the transistor T6 is turned off, the node N5 drops to low level, turning off the transistor T10. Further-more, the output VOUt of the one-shot pulse generation circuit 55 rises to high level.
(6) Finally, the transistor T5 is turned on by the output VOut raising the node N3 to high level.
~o The operations described above are repeated to detexmine the refresh intervals Tref.
In this manner the circuit of this embodiment be-comes a completely dynamic circuit that operates only on the charge and discharge of the capacitor.
Another embodiment in which the memory chips 24 are mounted on one wafer will now be described with reference to Figures 8 and 9.
The memory chips 24 are assembled on the wafer 71.
Figure 9 is a sectional view when the wafer 71 is actually packaged.
Power is supplied from the battery to the printed circuit board 11 through connection portions 13a through 13d, and power transfer between the printed circuit ~oard 11 and the wafer 71 is made through connection portions 41a through 41d. Like numerals are used to identify like constituents as in Figure 3B. The control chip 22, switches 1, 2, 60, capacitors 31, 38 and connector 12 of Figure 3A are not shown ~2Z2~)S~
in the drawing, though they are disposed on the printed circuit board 11.
Figure 10 shows an example in which the memory substrate bias voltage is used as the ground voltage. In this example, the substrate bias voltage is used as the ground voltage, whether or not the system is connected to the external device.
~onventionally, the substrate bias voltage is applied for the following three reasons:
(1) to adjust the transistor threshold values on the semiconductor substrate;
~2) to reduce the circuit capacitance of the semi-conductor substrate and to attain high speed operation; and lS (3) because a large current flows and the device will be broken down unless a reverse bias is applied when the n-type portions become negative due to an input voltage undershoot (assuming the substrate is of the p-type).
However, in connection with item (1), the threshold value of the transistors can now easily be adjusted by ion implantation or the like, and hence the technical significance of the application of the substrate bias voltage is not great.
In connection with item (2), there is no significance in applying the substrate bias voltage during holding of the data, because high speed operation is not necessary when the semiconductor file memory is cut off from the external device and holds the data.
The problem in item (3) can be solved by employing a p-n-p (or n-p-n~ structure for the circuit to avoid the application of forward bias.
It can be understood from the above explanation that the substrate bias voltage may be connected to the ground when the file memory only holds the data.
The device shown in Figure 10 is achieved by assembling a memory chip 101, a control chip 102~ a capacitor 103 and a chargeable thin film battery 104 into a thin plastic 12;i22~5~
card 105, having a size approximately that of a name card.
Numeral 12 again represents a connec~or, and 8 is the terminal for an external power source. ~otted lines represent a power source line and dot-and-chain lines represent grounding lines.
In this embodiment a grounding line is connected to the ground terminal 110 of the memory chip 101 and to the sub-strate bias voltage terminal 109.
This embodiment does not have the switch 1 shown in Figure 3A but is directly connected to the battery 104.
Accordingly, power from the external source is also supplied to the thin film battery so that it is automatically charged.
Since no power source for the substrate bias is necessary in this embodiment, no components exist corres-ponding to the switch 2, capacitor 38 and battery 17c in Figure 3A- Incidentally, the switch 60 is not necessary in this embodiment because the MCLK pulse is directly applied to the refresh timer inside the control chip through the terminal 111 .
~ince this embodiment is of the card type, it is effective as a personal file for private use which is portable and has a relatively small capacity (0.5 to 2 MB).
Figure 11 illustrates an example of a structure of a thin film secondary cell used for the device shown in Figure 10. This thin film battery is shown formed on an Si substrate 91 and a field oxide film 92. Numeral 93 represents a positive plate made of TiS2 and 94 is a solid electrolyte made of a solid solution of Li4SiO4 and Li3PO4. Numeral 95 represents a negative plate made of Li or LiAQ alloy and 96 is a current collector. A suitable material for the current collector is Ni. Numeral 97 represents a protective film of Si3N4 or the like.
Figure 12 illustrates an example in which the sub~
strate bias voltage is used as the grounding voltage and the memory chip, control chip and battery are all assembled on one wafer. In this example, the control chip 74, the thin film battery 73 and a power source capacitor 80 are also integrated on the wafer 71 with the memory device 72 to enable the memory device 72 to keep the data. Unlike the embodiment ~L2Z;~5() shown in Figure ~, a discharged battery in this example cannot be replaced independently, so that the battery is preferably a rechargeable secondary cell. It is apparent that the capacitor can easily be produced by an ordinary LSI process. The capacity of the power source capacitor is believed to be about 10 ~F. If this capacitor is realized by a MOS capacitor using 500 A-thick SiO2, for example, the size can be made below 1 cm , and the capacitor area is less than 1% of the total area of the wafer when a 5 in wafer is used.
~o The operations described above are repeated to detexmine the refresh intervals Tref.
In this manner the circuit of this embodiment be-comes a completely dynamic circuit that operates only on the charge and discharge of the capacitor.
Another embodiment in which the memory chips 24 are mounted on one wafer will now be described with reference to Figures 8 and 9.
The memory chips 24 are assembled on the wafer 71.
Figure 9 is a sectional view when the wafer 71 is actually packaged.
Power is supplied from the battery to the printed circuit board 11 through connection portions 13a through 13d, and power transfer between the printed circuit ~oard 11 and the wafer 71 is made through connection portions 41a through 41d. Like numerals are used to identify like constituents as in Figure 3B. The control chip 22, switches 1, 2, 60, capacitors 31, 38 and connector 12 of Figure 3A are not shown ~2Z2~)S~
in the drawing, though they are disposed on the printed circuit board 11.
Figure 10 shows an example in which the memory substrate bias voltage is used as the ground voltage. In this example, the substrate bias voltage is used as the ground voltage, whether or not the system is connected to the external device.
~onventionally, the substrate bias voltage is applied for the following three reasons:
(1) to adjust the transistor threshold values on the semiconductor substrate;
~2) to reduce the circuit capacitance of the semi-conductor substrate and to attain high speed operation; and lS (3) because a large current flows and the device will be broken down unless a reverse bias is applied when the n-type portions become negative due to an input voltage undershoot (assuming the substrate is of the p-type).
However, in connection with item (1), the threshold value of the transistors can now easily be adjusted by ion implantation or the like, and hence the technical significance of the application of the substrate bias voltage is not great.
In connection with item (2), there is no significance in applying the substrate bias voltage during holding of the data, because high speed operation is not necessary when the semiconductor file memory is cut off from the external device and holds the data.
The problem in item (3) can be solved by employing a p-n-p (or n-p-n~ structure for the circuit to avoid the application of forward bias.
It can be understood from the above explanation that the substrate bias voltage may be connected to the ground when the file memory only holds the data.
The device shown in Figure 10 is achieved by assembling a memory chip 101, a control chip 102~ a capacitor 103 and a chargeable thin film battery 104 into a thin plastic 12;i22~5~
card 105, having a size approximately that of a name card.
Numeral 12 again represents a connec~or, and 8 is the terminal for an external power source. ~otted lines represent a power source line and dot-and-chain lines represent grounding lines.
In this embodiment a grounding line is connected to the ground terminal 110 of the memory chip 101 and to the sub-strate bias voltage terminal 109.
This embodiment does not have the switch 1 shown in Figure 3A but is directly connected to the battery 104.
Accordingly, power from the external source is also supplied to the thin film battery so that it is automatically charged.
Since no power source for the substrate bias is necessary in this embodiment, no components exist corres-ponding to the switch 2, capacitor 38 and battery 17c in Figure 3A- Incidentally, the switch 60 is not necessary in this embodiment because the MCLK pulse is directly applied to the refresh timer inside the control chip through the terminal 111 .
~ince this embodiment is of the card type, it is effective as a personal file for private use which is portable and has a relatively small capacity (0.5 to 2 MB).
Figure 11 illustrates an example of a structure of a thin film secondary cell used for the device shown in Figure 10. This thin film battery is shown formed on an Si substrate 91 and a field oxide film 92. Numeral 93 represents a positive plate made of TiS2 and 94 is a solid electrolyte made of a solid solution of Li4SiO4 and Li3PO4. Numeral 95 represents a negative plate made of Li or LiAQ alloy and 96 is a current collector. A suitable material for the current collector is Ni. Numeral 97 represents a protective film of Si3N4 or the like.
Figure 12 illustrates an example in which the sub~
strate bias voltage is used as the grounding voltage and the memory chip, control chip and battery are all assembled on one wafer. In this example, the control chip 74, the thin film battery 73 and a power source capacitor 80 are also integrated on the wafer 71 with the memory device 72 to enable the memory device 72 to keep the data. Unlike the embodiment ~L2Z;~5() shown in Figure ~, a discharged battery in this example cannot be replaced independently, so that the battery is preferably a rechargeable secondary cell. It is apparent that the capacitor can easily be produced by an ordinary LSI process. The capacity of the power source capacitor is believed to be about 10 ~F. If this capacitor is realized by a MOS capacitor using 500 A-thick SiO2, for example, the size can be made below 1 cm , and the capacitor area is less than 1% of the total area of the wafer when a 5 in wafer is used.
Claims (5)
1. A memory device comprising (a) a dynamic random access memory chip having a CMOS
memory cell, (b) means for connecting an external device to the memory device, (c) means for detecting a connection between the external device and the memory device, (d) a battery for supplying power to the memory chip, (e) control means comprising a refresh timer for detecting a state of the memory cell and for outputting signals with a refresh periodicity, and a refresh signal generator circuit for generating refresh signals on receipt of a signal from the refresh timer.
memory cell, (b) means for connecting an external device to the memory device, (c) means for detecting a connection between the external device and the memory device, (d) a battery for supplying power to the memory chip, (e) control means comprising a refresh timer for detecting a state of the memory cell and for outputting signals with a refresh periodicity, and a refresh signal generator circuit for generating refresh signals on receipt of a signal from the refresh timer.
2. A memory device according to claim 1 wherein the refresh timer comprises (f) a pseudo memory cell having a structure analogous to the memory cell, (g) means for detecting a leakage current of the pseudo memory cell, and (h) a one-shot pulse generation circuit for outputting a signal on receipt of a signal from said leakage current detecting means.
3. A memory device according to claim 2, including a battery for supplying power to said memory device and a board on which said memory device and said battery are disposed, wherein a substrate bias voltage of said memory device is a grounding voltage of said battery.
4. A memory including a memory device and a battery for supplying power to said memory device, said memory including a changeover device for detecting whether or not said memory is connected to an external device for reading and writing said memory device and for supplying power to said memory device, for connecting said external device to supply power to said memory device when it is connected to said external device, and for connecting said battery to supply power to said memory device when it is not connected to said external device, and wherein said memory further comprises a refresh circuit, and a first capacitor portion for storing data, said refresh circuit comprising:
a second capacitor portion having substantially the same construction as that of said first capacitor portion;
means for detecting a potential change of said second capacitor portion due to a leakage current and for producing timing signals when such change reaches a predetermined value;
means for supplying refresh signals to said memory device in response to a said timing signal; and means for charging said second capacitor portion in response to a said timing signal.
a second capacitor portion having substantially the same construction as that of said first capacitor portion;
means for detecting a potential change of said second capacitor portion due to a leakage current and for producing timing signals when such change reaches a predetermined value;
means for supplying refresh signals to said memory device in response to a said timing signal; and means for charging said second capacitor portion in response to a said timing signal.
5. The memory as defined in claim 4, wherein said battery includes:
a first battery portion for supplying power to said memory device when it is not connected to said external device; and a second battery portion for supplying a substrate bias voltage to said memory device.
a first battery portion for supplying power to said memory device when it is not connected to said external device; and a second battery portion for supplying a substrate bias voltage to said memory device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58099341A JPS59227090A (en) | 1983-06-06 | 1983-06-06 | Nonvolatile memory device |
| JP99341/1983 | 1983-06-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1222050A true CA1222050A (en) | 1987-05-19 |
Family
ID=14244914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000455996A Expired CA1222050A (en) | 1983-06-06 | 1984-06-06 | Memory system |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4672586A (en) |
| EP (2) | EP0385516A3 (en) |
| JP (1) | JPS59227090A (en) |
| KR (1) | KR930001651B1 (en) |
| CA (1) | CA1222050A (en) |
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| JPS6150287A (en) * | 1984-08-20 | 1986-03-12 | Toshiba Corp | Automatic refresh control circuit of dynamic memory |
| US4985870A (en) * | 1986-07-02 | 1991-01-15 | Dallas Semiconductor Corporation | Apparatus for connecting electronic modules containing integrated circuits and backup batteries |
| FR2608804B1 (en) * | 1986-12-22 | 1991-10-31 | Matra Communication | EXTENSION MODULE FOR TELEINFORMATICS TERMINAL |
| GB8801472D0 (en) * | 1988-01-22 | 1988-02-24 | Int Computers Ltd | Dynamic random-access memory |
| US5144586A (en) * | 1988-12-22 | 1992-09-01 | Dallas Semiconductor Corporation | Apparatus and method for connecting electronic modules containing integrated circuits and backup batteries |
| EP0715311A3 (en) * | 1989-05-08 | 1996-09-18 | Hitachi Maxell | A semiconductor memory apparatus |
| US5430681A (en) * | 1989-05-08 | 1995-07-04 | Hitachi Maxell, Ltd. | Memory cartridge and its memory control method |
| JP2614514B2 (en) * | 1989-05-19 | 1997-05-28 | 三菱電機株式会社 | Dynamic random access memory |
| WO1991011007A2 (en) * | 1990-01-19 | 1991-07-25 | Dallas Semiconductor Corporation | Serial dram controller with transparent refresh |
| EP0467208B1 (en) * | 1990-07-11 | 1995-09-20 | Hitachi, Ltd. | Digital information system |
| KR920022293A (en) * | 1991-05-16 | 1992-12-19 | 김광호 | Semiconductor memory device that performs irregular refresh operations |
| IT1258242B (en) * | 1991-11-07 | 1996-02-22 | Samsung Electronics Co Ltd | SEMICONDUCTOR MEMORY DEVICE INCLUDING SUPPLY VOLTAGE PUMPING CIRCUIT |
| JP2998944B2 (en) * | 1991-12-19 | 2000-01-17 | シャープ株式会社 | Ring oscillator |
| US5781784A (en) * | 1992-07-09 | 1998-07-14 | Zilog, Inc. | Dynamic power management of solid state memories |
| JP3214107B2 (en) * | 1992-11-09 | 2001-10-02 | 富士電機株式会社 | Battery mounted integrated circuit device |
| JPH07141865A (en) * | 1993-06-28 | 1995-06-02 | Mitsubishi Electric Corp | Oscillation circuit and semiconductor memory |
| US6379835B1 (en) | 1999-01-12 | 2002-04-30 | Morgan Adhesives Company | Method of making a thin film battery |
| US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
| US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
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| US9793523B2 (en) | 2002-08-09 | 2017-10-17 | Sapurast Research Llc | Electrochemical apparatus with barrier layer protected substrate |
| US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
| US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
| US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
| US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
| US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
| US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
| CN101931097B (en) | 2004-12-08 | 2012-11-21 | 希莫菲克斯公司 | Deposition of LiCoO2 |
| KR100702031B1 (en) * | 2006-02-22 | 2007-03-30 | 삼성전자주식회사 | Semiconductor device with battery |
| EP2067163A4 (en) | 2006-09-29 | 2009-12-02 | Infinite Power Solutions Inc | Masking of and material constraint for depositing battery layers on flexible substrates |
| US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
| JP5551612B2 (en) | 2007-12-21 | 2014-07-16 | インフィニット パワー ソリューションズ， インコーポレイテッド | Method of sputtering a target for an electrolyte membrane |
| US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
| JP5705549B2 (en) | 2008-01-11 | 2015-04-22 | インフィニット パワー ソリューションズ， インコーポレイテッド | Thin film encapsulation for thin film batteries and other devices |
| KR101672254B1 (en) | 2008-04-02 | 2016-11-08 | 사푸라스트 리써치 엘엘씨 | Passive over/under voltage control and protection for energy storage devices associated with energy harvesting |
| CN102119454B (en) | 2008-08-11 | 2014-07-30 | 无穷动力解决方案股份有限公司 | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
| US8260203B2 (en) | 2008-09-12 | 2012-09-04 | Infinite Power Solutions, Inc. | Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof |
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| KR101575812B1 (en) * | 2009-01-21 | 2015-12-09 | 삼성전자주식회사 | Data storage device having self-powered semiconductor device |
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| WO2011028825A1 (en) | 2009-09-01 | 2011-03-10 | Infinite Power Solutions, Inc. | Printed circuit board with integrated thin film battery |
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| US3796998A (en) * | 1971-09-07 | 1974-03-12 | Texas Instruments Inc | Mos dynamic memory |
| US3859638A (en) * | 1973-05-31 | 1975-01-07 | Intersil Inc | Non-volatile memory unit with automatic standby power supply |
| DE2654403A1 (en) * | 1976-12-01 | 1978-07-13 | Honeywell Inf Systems | MOS memory regeneration circuit - is supplied with regeneration voltage from generator coupled to logic unit |
| US4209710A (en) * | 1978-06-27 | 1980-06-24 | Honeywell Inc. | Battery back-up regulator |
| US4214172A (en) * | 1979-02-15 | 1980-07-22 | Telxon Corporation | Interlock for power sources in data processing apparatus |
| JPS57109183A (en) * | 1980-12-26 | 1982-07-07 | Hitachi Ltd | Non-volatile memory |
| JPS5956291A (en) * | 1982-09-24 | 1984-03-31 | Hitachi Ltd | Mos storage device |
| US4492876A (en) * | 1983-07-18 | 1985-01-08 | At&T Bell Laboratories | Power supply switching arrangement |
-
1983
- 1983-06-06 JP JP58099341A patent/JPS59227090A/en active Pending
-
1984
- 1984-05-24 EP EP19900107554 patent/EP0385516A3/en not_active Withdrawn
- 1984-05-24 EP EP84105954A patent/EP0128427A3/en not_active Withdrawn
- 1984-05-30 KR KR1019840002996A patent/KR930001651B1/en not_active IP Right Cessation
- 1984-06-06 US US06/617,919 patent/US4672586A/en not_active Expired - Lifetime
- 1984-06-06 CA CA000455996A patent/CA1222050A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0128427A3 (en) | 1988-06-15 |
| JPS59227090A (en) | 1984-12-20 |
| EP0385516A3 (en) | 1991-03-20 |
| KR930001651B1 (en) | 1993-03-08 |
| EP0128427A2 (en) | 1984-12-19 |
| US4672586A (en) | 1987-06-09 |
| EP0385516A2 (en) | 1990-09-05 |
| KR850000726A (en) | 1985-03-09 |
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